Produkte > IRL
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLR3714TRL | Infineon Technologies | Description: MOSFET N-CH 20V 36A DPAK Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714TRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714TRPBF | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRLR3714TRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714TRR | Infineon Technologies | Description: MOSFET N-CH 20V 36A DPAK Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 47W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714TRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 36A DPAK Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714Z | IR | 07+ TO-252 | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714Z | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZPBF | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZPBF | INFINEON | Description: INFINEON - IRLR3714ZPBF - Leistungs-MOSFET, n-Kanal, 20 V, 37 A, 0.015 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 37 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 35 Gate-Source-Schwellenspannung, max.: 2.1 Verlustleistung: 35 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.015 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.015 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTR | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTRL | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTRL | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTRR | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3714ZTRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 37A DPAK Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715 | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715 | IR | 07+ TO-252 | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715 | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715PBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715TR | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715TRL | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715TRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715TRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715TRR | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715TRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715Z | IR | 07+ TO-252 | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715Z | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 75 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZCTRLP | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZPBF | INFINEON | Description: INFINEON - IRLR3715ZPBF - Leistungs-MOSFET, n-Kanal, 20 V, 49 A, 0.011 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 49 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 40 Gate-Source-Schwellenspannung, max.: 2.1 Verlustleistung: 40 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.011 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.011 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZPBF | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTR | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 40W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTR | IR | auf Bestellung 21600 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3715ZTRL | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTRPBF | IR | SOT252/2.5 | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTRR | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3715ZTRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 49A DPAK Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717HR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717PBF | Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3717PBF Produktcode: 113283
zu Favoriten hinzufügen
Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3717PBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET 4.2mOhms 21nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717PBF | Infineon Technologies | Description: MOSFET N-CH 20V 120A DPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2.45V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TR | JSMSEMI | Transistor N-Channel MOSFET; 30V; 20V; 4,5mOhm; 120A; 90W; -55°C ~ 175°C; Equivalent: IRLR3717; IRLR3717TRL; IRLR3717TR; IRLR3717TRR; SP001568638; SP001567384; SP001553200; SP001569116; IRLR3717TR JSMICRO TIRLR3717 JSM Anzahl je Verpackung: 25 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR3717TR-CN | CHIPNOBO | Transistor N-Channel MOSFET; 30V; 20V; 4,5mOhm; 120A; 90W; -55°C ~ 175°C; Equivalent: IRLR3717; IRLR3717TRL; IRLR3717TR; IRLR3717TRR; SP001568638; SP001567384; SP001553200; SP001569116; IRLR3717TR CHIPNOBO TIRLR3717 CNB Anzahl je Verpackung: 25 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR3717TR-VB | VBsemi | Tranzystor N-MOSFET; 20V; 20V; 5,5mOhm; 120A; 89W; -55°C ~ 175°C; Odpowiednik: IRLR3717TR-VB; IRLR3717; IRLR3717TR; IRLR3717TRR; VBE1202; IRLR3717 TIRLR3717 VBS Anzahl je Verpackung: 50 Stücke | auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR3717TRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRLHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRLPBF | Infineon Technologies | Description: MOSFET N-CH 20V 120A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2.45V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRLPBF | Infineon / IR | MOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 120A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2.45V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRPBF | Infineon / IR | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRRHR | Infineon / IR | Infineon | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies | MOSFETs 20V 1 N-CH HEXFET 4.2mOhms 21nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRRPBF | Infineon | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies | Description: MOSFET N-CH 20V 120A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies | Trans MOSFET N-CH 20V 120A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802 | International Rectifier | Transistor N-Channel MOSFET; 12V; 12V; 30mOhm; 84A; 88W; -55°C ~ 175°C; IRLR3802 TIRLR3802 Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR3802 Produktcode: 91609
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3802PBF | Infineon Technologies | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802PBF | International Rectifier | Description: MOSFET N-CH 12V 84A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: TO-252AA Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V | auf Bestellung 3740 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLR3802PBF | Infineon Technologies | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube | auf Bestellung 2799 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802PBF | Infineon Technologies | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube | auf Bestellung 2596 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802PBF | International Rectifier | MOSFET N-CH 12V 84A DPAK Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802PBF | International Rectifier HiRel Products | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube | auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802PBF | INFINEON | Description: INFINEON - IRLR3802PBF - Leistungs-MOSFET, n-Kanal, 12 V, 84 A, 8500 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 12V rohsCompliant: Y-EX Dauer-Drainstrom Id: 84A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.9V Verlustleistung: 88W SVHC: No SVHC (27-Jun-2018) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 8500µohm | auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802PBF | Infineon Technologies | MOSFETs 12V 1 N-CH HEXFET 4.2mOhms 27nC | auf Bestellung 1572 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLR3802PBF | Infineon Technologies | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube | auf Bestellung 2799 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802PBF | Infineon Technologies | Description: IRLR3802 - 12V-300V N-CHANNEL PO Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: TO-252AA (DPAK) Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V | auf Bestellung 2596 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLR3802TRL | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRLPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRLPBF | Infineon Technologies | Description: MOSFET N-CH 12V 84A DPAK Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRPBF | Infineon Technologies | Description: MOSFET N-CH 12V 84A DPAK Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRPBF | Infineon | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3802TRPBF | Infineon Technologies | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1962 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802TRPBF | International Rectifier HiRel Products | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802TRPBF | Infineon / IR | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRPBF | International Rectifier HiRel Products | Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 13000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3802TRPBF-INF | Infineon Technologies | Description: IRLR3802 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRR | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3802TRRPBF | Infineon / IR | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3915 | Infineon Technologies | Description: IRLR3915 | auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3915 | International Rectifier | N-MOSFET HEXFET 55V 30A 120W 0.014Ω IRLR3915 TIRLR3915 Anzahl je Verpackung: 10 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLR3915PBF Produktcode: 84592
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Lieblingsprodukt
| IR | Transistoren > MOSFET N-CH Gehäuse: D-Pak (TO-252) Drain-Source-Spannung Uds, V: 55 Drain-Strom Idd, A: 61 Durchlasswiderstand Rds(on), Ohm: 0,14 Montage: SMD | Produkt ist nicht verfügbar
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| IRLR3915PBF | Infineon Technologies | Description: MOSFET N-CH 55V 30A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Discontinued at Digi-Key Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3915TR | UMW | Description: MOSFET N-CH 55V 30A DPAK Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3915TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 61A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3915TRPBF | INFINEON | Description: INFINEON - IRLR3915TRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 30 A, 0.014 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 120W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.014ohm | auf Bestellung 3429 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3915TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 61A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3915TRPBF | Infineon Technologies | Description: MOSFET N-CH 55V 30A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRLR3915TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 61A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 4539 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3915TRPBF | Infineon Technologies | MOSFETs MOSFT 55V 61A 14mOhm 61nC Log Lvl | auf Bestellung 3419 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLR3915TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 55V 61A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 4539 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3915TRPBF | INFINEON | Description: INFINEON - IRLR3915TRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 30 A, 0.014 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 120W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.014ohm | auf Bestellung 3429 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLR3915TRPBF | TO252 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |