Produkte > GSF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GSFD4003 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 240.00A, 4 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD4003 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 240.00A, 4 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V | auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD4005 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -88.00A, - Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 124W (Tj) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD4005 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -88.00A, - Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 124W (Tj) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V | auf Bestellung 2256 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD4015 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40.00A, - Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 80W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V | auf Bestellung 2465 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD4015 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40.00A, - Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 80W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD4N65 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4.00A, 650 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V | auf Bestellung 1290 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD500P10 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30.00A, - Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V | auf Bestellung 4975 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD6008 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 7.00A, 600 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V | auf Bestellung 4911 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD6016 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60.00A, 60 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD65R900 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 650 Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD6959 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -60.00A, - Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V | auf Bestellung 169 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD6959 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -60.00A, - Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD8005 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.5A, 800V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD8005 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.5A, 800V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.16 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFD9R706 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60.00A, 60 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V | auf Bestellung 3866 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFDT90R120 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 900 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 50 V | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFF0308 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 780MA, 30V Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 780mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 446mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 15 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFF0308 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 780MA, 30V Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 780mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 446mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 15 V | auf Bestellung 15890 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFF3134 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.75A, 20V Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V Power Dissipation (Max): 150mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFF3134 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.75A, 20V Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V Power Dissipation (Max): 150mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V | auf Bestellung 7227 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFG65R900 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 650 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V | auf Bestellung 772 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH03152 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150.00A, 3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 110W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V | auf Bestellung 1243 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH06100 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 100A, 60V, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V | auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH0625 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -25.00A, - Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 30 V | auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH0680 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 80.00A, 60 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH08140 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 140.00A, 8 Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 944 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH0970 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 160A, 100V Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH0980 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 150A, 100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 275W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 25 V | auf Bestellung 671 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH10120 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 180.00A, 1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 50 V | auf Bestellung 798 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH5010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 9A, 500V, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH5020 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 50 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 252W (Ta) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2687 pF @ 25 V | auf Bestellung 1872 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH5R010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 120.00A, 1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5208 pF @ 50 V | auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH60R160 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 24.00A, 60 Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH60R190 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 20.00A, 60 Input Capacitance (Ciss) (Max) @ Vds: 1174 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 994 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH60R570 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 7.00A, 600 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 3.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 100 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH80R420 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 12.00A, 80 Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.8V @ 250µA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH80R900 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 6.00A, 800 Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH9506 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 6A, 950V, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tj) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 50 V | auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFH9R015 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 100.00A, 1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 75 V | auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-10K | Red Lion | Fibre Optic Transceivers Gigabit, SFP/LC, singlemode, 1310nm, 10km typical | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-10K | Red Lion Controls | Description: SFP TXRX SINGLEMOOD 1310FP 10KM Packaging: Bulk Connector Type: LC Wavelength: 1310nm Mounting Type: Pluggable, SFP Voltage - Supply: 3.1V ~ 3.5V Applications: General Purpose Data Rate: 1.25Gbps Part Status: Active | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-10K-C | Amphenol ProLabs | Fibre Optic Transceivers TAA 1000Base-LX SFP Transceiver (SMF, 1310nm, 10km, LC, DOM) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFIBER-SFP-10K-C | ATGBICS | Description: Compatible SFP 1000Mb Data Rate: 1000Mbps Applications: Networking, General Purpose Voltage - Supply: 3.3V Mounting Type: Pluggable, SFP Wavelength: 1310nm Connector Type: LC Duplex Packaging: Retail Package | auf Bestellung 3451 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-30K | Red Lion Controls | Description: SFP TXRX SINGLEMOOD 1550DFB 30KM Packaging: Bulk Connector Type: LC Wavelength: 1310nm Mounting Type: Pluggable, SFP Voltage - Supply: 3.1V ~ 3.5V Applications: General Purpose Data Rate: 1.25Gbps | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFIBER-SFP-30K-C | ATGBICS | Description: Compatible SFP 1000Mb Connector Type: LC Duplex Packaging: Tray Data Rate: 1000Mbps Applications: Networking, General Purpose Voltage - Supply: 3.3V Mounting Type: Pluggable, SFP Wavelength: 1310nm | auf Bestellung 3340 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-50K | Red Lion Controls | Description: SFP TXRX SINGLEMOOD 1550DFB 50KM Packaging: Bulk Connector Type: LC Wavelength: 1550nm Mounting Type: Pluggable, SFP Voltage - Supply: 3.1V ~ 3.5V Applications: General Purpose Data Rate: 1.25Gbps Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFIBER-SFP-50K-C | ATGBICS | Description: Compatible SFP 1000Mb Packaging: Tray Connector Type: LC Duplex Wavelength: 1550nm Mounting Type: Pluggable, SFP Voltage - Supply: 3.3V Applications: Networking, General Purpose Data Rate: 1000Mbps | auf Bestellung 4292 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-80K | Red Lion Controls | Description: G SM-80KM F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFIBER-SFP-80K | Red Lion | Fibre Optic Transceivers Gigabit, SFP/LC, singlemode, 1550nm, 80km typical | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFIBER-SFP-80K-C | ATGBICS | Description: Compatible SFP 1000Mb Packaging: Retail Package Connector Type: LC Duplex Wavelength: 1550nm Mounting Type: Pluggable, SFP Voltage - Supply: 3.3V Applications: Networking, General Purpose Data Rate: 1000Mbps | auf Bestellung 4677 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFIBER-SFP-80K-C | Amphenol ProLabs | Fibre Optic Transmitters, Receivers, Transceivers Sixnet GSFIBER-SFP-80K Compatible TAA 1000Base-ZX SFP Transceiver (SMF, 1550nm, 80km, LC, DOM) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFK0300 | Good-Ark Semiconductor | Description: MOSFET, N-CH, DUAL, 0.8A, 30V, S Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0300 | Good-Ark Semiconductor | Description: MOSFET, N-CH, DUAL, 0.8A, 30V, S Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0501 | Good-Ark Semiconductor | Description: MOSFET, P-CH, DUAL, -130MA, -50V Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 20V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0501 | Good-Ark Semiconductor | Description: MOSFET, P-CH, DUAL, -130MA, -50V Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 20V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0501E | Good-Ark Semiconductor | Description: MOSFET, P-CH, DUAL, -180MA, -50V Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 25.2pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 150mA, 10V Gate Charge (Qg) (Max) @ Vgs: 530pC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 5975 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0501E | Good-Ark Semiconductor | Description: MOSFET, P-CH, DUAL, -180MA, -50V Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 25.2pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 150mA, 10V Gate Charge (Qg) (Max) @ Vgs: 530pC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0502 | Good-Ark Semiconductor | Description: MOSFET, N-CH, DUAL, 0.3A, 50V, S Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK0502 | Good-Ark Semiconductor | Description: MOSFET, N-CH, DUAL, 0.3A, 50V, S Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK06002 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 50V 0.3A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 580nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFK06002 | Good-Ark Semiconductor | Description: MOSFET 2N-CH 50V 0.3A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 580nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 5214 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK3420 | Good-Ark Semiconductor | Description: MOSFET N/P-CH 30V 0.8A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 5950 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFK3420 | Good-Ark Semiconductor | Description: MOSFET N/P-CH 30V 0.8A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 275mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKR00801T4D(Z) | TBI Motion | Description: BALL SCREW NUT 8MM DIA 1MM LEAD Packaging: Bulk Part Status: Active | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKR00802T3D(Z) | TBI Motion | Description: BALL SCREW NUT 8MM DIA 2MM LEAD Packaging: Bulk Part Status: Active | auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKR0082.5T3D(Z) | TBI Motion | Description: BALL SCREW NUT 8MM DIA 2.5MM LEA Packaging: Bulk Part Status: Active | auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKR01002T3D(Z) | TBI Motion | Description: BALL SCREW NUT 10MM DIA 2MM LEAD Packaging: Bulk Part Status: Active | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKR01004T3D(Z) | TBI Motion | Description: BALL SCREW NUT 10MM DIA 4MM LEAD Packaging: Bulk Part Status: Active | auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKR01202T4D(Z) | TBI Motion | Description: BALL SCREW NUT 12MM DIA 2MM LEAD Packaging: Bulk Part Status: Active | auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKW0202 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 2.5A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFKW0202 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 2.5A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) | auf Bestellung 2342 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL1003 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -2A, -100V Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.78W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V | auf Bestellung 2883 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL1003 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -2A, -100V Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.78W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL1004 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 3A, 100V, Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 2A, 10V Power Dissipation (Max): 1.78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL1004 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 3A, 100V, Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 2A, 10V Power Dissipation (Max): 1.78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL2004 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4.00A, 200 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 3A, 10V Power Dissipation (Max): 30W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 30 V | auf Bestellung 2403 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL2004 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4.00A, 200 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 3A, 10V Power Dissipation (Max): 30W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 30 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFL65R900 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 650 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFL65R900 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 650 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V | auf Bestellung 2916 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0205 | Good-Ark Semiconductor | Description: MOSFET, P-CH, DUAL, -5.5A, -20V, Part Status: Active Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0205 | Good-Ark Semiconductor | Description: MOSFET, P-CH, DUAL, -5.5A, -20V, Part Status: Active Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0232 | Good-Ark Semiconductor | Description: MOSFET 20V 32A 6DFN Part Status: Active Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 5.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 15V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 20W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: 6-DFN (2x3) | auf Bestellung 2968 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0232 | Good-Ark Semiconductor | Description: MOSFET 20V 32A 6DFN Part Status: Active Supplier Device Package: 6-DFN (2x3) Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 5.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 15V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Power - Max: 20W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 20V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0982 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 48A, 100V, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 50 V | auf Bestellung 2718 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0982 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 48A, 100V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN0988 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 16A, 100V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V Power Dissipation (Max): 32.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.05x3.08) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 20 V | auf Bestellung 1865 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN0988 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 16A, 100V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V Power Dissipation (Max): 32.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.05x3.08) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 20 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN11006 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60.00A, 60 Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN11006 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 60.00A, 60 Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN13010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50.00A, 10 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V | auf Bestellung 9504 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN13010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50.00A, 10 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN2306 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 65A, 20V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 4.5V Power Dissipation (Max): 44.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (3.05x3.08) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN2306 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 65A, 20V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 4.5V Power Dissipation (Max): 44.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (3.05x3.08) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V | auf Bestellung 2845 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN26010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 25.00A, 10 Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSFN26010 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 25.00A, 10 Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3013 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40.00A, - Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 15 V | auf Bestellung 1539 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3013 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -40.00A, - Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3019 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30.00A, - Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | auf Bestellung 4016 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| GSFN3019 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -30.00A, - Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
