Produkte > IPI
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPI65R660CFD | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | auf Bestellung 10483 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI65R660CFD | Infineon Technologies | MOSFET N-Ch 650V 6A I2PAK-3 CoolMOS CFD2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI65R660CFDXKSA1 | Infineon Technologies | Description: MOSFET N-CH 650V 6A TO262-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N04S3-07 | Infineon Technologies | MOSFET N-Ch 40V 70A I2PAK-3 OptiMOS-T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N04S307AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N04S4-06 | Infineon Technologies | MOSFETs N-Ch 40V 70A I2PAK-3 OptiMOS-T2 | auf Bestellung 691 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI70N04S406AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 70A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 26µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI70N04S406AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 70A TO262-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 26µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10S3-12 | Infineon Technologies | MOSFET N-Ch 100V 70A I2PAK-3 OptiMOS-T | auf Bestellung 317 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10S312AKSA1 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10S312AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 70A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO262-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10S3L-12 | Infineon Technologies | MOSFET N-Ch 100V 70A I2PAK-3 OptiMOS-T | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10S3L12AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 70A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 83µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10S3L12AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 70A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2.4V @ 83µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI70N10SL-16 | Infineon Technologies | MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS | auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N10SL16AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 70A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: PG-TO262-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI70N10SL16AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 70A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: PG-TO262-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N12S311AKSA1 | Infineon Technologies | Description: MOSFET N-CHANNEL_100+ Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI70N12S311AKSA1 | Infineon Technologies | MOSFET N-CHANNEL 100+ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70N12S3L12AKSA1 | Infineon Technologies | Description: MOSFET N-CHANNEL_100+ Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 83µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 19000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI70N12S3L12AKSA1 | Infineon Technologies | MOSFET N-CHANNEL 100+ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70P04P4-09 | Infineon Technologies | MOSFET P-Ch -40V -70A I2PAK-3 OptiMOS-P2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70P04P409AKSA1 | Infineon Technologies | Description: MOSFET N-CH TO262-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70R950CEXKSA1 | Infineon Technologies | Description: CONSUMER Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI70R950CEXKSA1 | Infineon Technologies | MOSFET CONSUMER | auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI77N06S3-09 | Infineon Technologies | Description: MOSFET N-CH 55V 77A TO-262 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 13A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 13A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 12µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L-03 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 2.2V @ 90µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L-03 | Infineon Technologies | MOSFET N-Ch 30V 80A I2PAK-3 OptiMOS-T2 | auf Bestellung 461 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N03S4L-04 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L-04 | Infineon Technologies | MOSFET N-Ch 30V 80A I2PAK-3 OptiMOS-T2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L03AKSA1 | Infineon Technologies | Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI80N03S4L03AKSA1 | Infineon Technologies | Description: MOSFET N-CH 30V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: PG-TO262-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L03AKSA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L03AKSA1 | Infineon Technologies | Trans MOSFET N-CH 30V 80A Automotive 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI80N03S4L04AKSA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N03S4L04AKSA1 | Infineon Technologies | Description: MOSFET N-CH 30V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S2-04 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V | auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S2-H4 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S204AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S204AKSA2 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V | auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S2H4AKSA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S2H4AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S2H4AKSA2 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S2H4AKSA2 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V | auf Bestellung 14500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S3-03 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S3-03 | Infineon Technologies | Description: N-CHANNEL AUTOMOTIVE MOSFET Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 4V @ 120µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S3-04 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S3-04 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S3-06 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S3-06 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S3-H4 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S303AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO262-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S303AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 120µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk | auf Bestellung 172000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S304AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S306AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 52µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S3H4AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S4-03 | Infineon Technologies | Description: IPI80N04 - 20V-40V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V | auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S4-03 | Infineon Technologies | MOSFETs N-Ch 40V 80A I2PAK-3 OptiMOS-T2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S4-04 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2 | auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S403AKSA1 | INFINEON | Description: INFINEON - IPI80N04S403AKSA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 3200 µohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 94W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 3200µohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI80N04S403AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 53µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S403BAKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V TO263 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S404AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 35µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S404AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TO262-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 285682 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N04S4L-04 | Infineon Technologies | MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S4L04AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2.2V @ 35µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N04S4L04AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO262-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2.2V @ 35µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S207AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S207AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S207AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S207AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | Produkt ist nicht verfügbar | Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S207AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S208AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S208AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | Produkt ist nicht verfügbar | Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S208AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S2L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S2L05AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S2L05AKSA2 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S2L11AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2V @ 93µA Power Dissipation (Max): 158W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S2L11AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S2L11AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V | auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S3-05 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 110µA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S3-07 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 80µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S3L-05 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2.2V @ 115µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S3L-08 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2.2V @ 55µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S3L06XK | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO262-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 2.2V @ 80µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S4-07 | Infineon | auf Bestellung 156500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPI80N06S4-07 | Infineon Technologies | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S405AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO262-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S405AKSA2 | Infineon Technologies | Description: MOSFET N-CHANNEL_55/60V Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S405AKSA2 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 839 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S405AKSA2 | Infineon Technologies | Description: MOSFET N-CHANNEL_55/60V Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO262-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S407AKSA1 | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 582 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S407AKSA2 | Infineon Technologies | MOSFETs MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S407AKSA2 | Infineon | IPI80N06S407AKSA2 IPI80N06S4-07 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S407AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI80N06S407AKSA2 | Infineon | Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 IPI80N06S407AKSA2 TIPI80N06S4-07 Anzahl je Verpackung: 10 Stücke | auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPI80N06S4L-05 | Infineon Technologies | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPI80N06S4L-07 | Infineon Technologies | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | auf Bestellung 206 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |