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AOD474Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 2.5A/10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 2.1W (Ta), 28.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 37.5 V
Produkt ist nicht verfügbar
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AOD474AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 2.5A/10A TO252
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD474BAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 2.5A/10A TO252
Produkt ist nicht verfügbar
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AOD476Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOD478ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 45W; TO252
On-state resistance: 0.14Ω
Mounting: SMD
Power dissipation: 45W
Gate charge: 5.1nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD478
Produktcode: 99443
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Transistoren > MOSFET N-CH
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AOD478Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 11A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD478Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2.5A/11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD478ALPHATransistor N-Channel MOSFET; 100V; 20V; 270mOhm; 11A; 45W; -55°C ~ 175°C; AOD478 TAOD478
Anzahl je Verpackung: 25 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.34 EUR
Mindestbestellmenge: 25 Stücke
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AOD480Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 25A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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AOD480Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD480ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 33mOhm; 25A; 21W; -55°C ~ 175°C; AOD480 TAOD480
Anzahl je Verpackung: 50 Stücke
auf Bestellung 1480 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.74 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOD480Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AOD480ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 21W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 21W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
175+0.49 EUR
222+0.38 EUR
252+0.33 EUR
500+0.31 EUR
2500+0.29 EUR
Mindestbestellmenge: 175 Stücke
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AOD480
Produktcode: 179461
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Transistoren > MOSFET N-CH
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AOD482Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5A/32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 59190 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.88 EUR
Mindestbestellmenge: 2500 Stücke
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AOD482ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
auf Bestellung 4909 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.46 EUR
87+0.99 EUR
97+0.88 EUR
107+0.8 EUR
500+0.75 EUR
Mindestbestellmenge: 59 Stücke
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AOD482ALPHA&OMEGATransistor N-Channel MOSFET; 100V; 20V; 76mOhm; 32A; 100W; -55°C ~ 175°C; AOD482 TAOD482
Anzahl je Verpackung: 10 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.73 EUR
Mindestbestellmenge: 20 Stücke
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AOD482
Produktcode: 121153
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AOD482Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 32A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD482ALPHA&OMEGATransistor N-Channel MOSFET; 100V; 20V; 76mOhm; 32A; 100W; -55°C ~ 175°C; AOD482 TAOD482
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.73 EUR
Mindestbestellmenge: 20 Stücke
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AOD482Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5A/32A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 59346 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
11+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
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AOD484Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A TO252
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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AOD484Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A TO252
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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AOD484AO07+ TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOD486AAlpha & Omega SemiconductorTrans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD486AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD488AOTO-252
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOD492Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 85A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4512 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOD492Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 85A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOD494AOTO-252
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOD496AOTO-252
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOD496Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 62A TO252
Produkt ist nicht verfügbar
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AOD496AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 11A/57A TO252
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOD498Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2.5A/11A TO252
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD4C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD4N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD4N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 2,3Ohm; 4A; 104W; -50°C ~ 150°C; AOD4N60 TAOD4n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.86 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOD4N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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AOD4N60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 104W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12nC
Produkt ist nicht verfügbar
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AOD4N60
Produktcode: 126928
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Transistoren > MOSFET N-CH
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AOD4N60_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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AOD4S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK
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AOD4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
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AOD4S60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
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AOD4S60AOSMOSFET, N-CH, 600V, 4A, TO-252 Транзистори
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AOD4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
auf Bestellung 90 Stücke:
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6+4.05 EUR
10+2.58 EUR
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AOD4T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 100 V
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AOD4T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 100 V
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AOD502Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 25V 15A TO252
Produkt ist nicht verfügbar
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AOD504Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 25V 18A
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AOD508ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
auf Bestellung 2244 Stücke:
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113+0.75 EUR
128+0.67 EUR
143+0.6 EUR
500+0.57 EUR
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AOD508ALPHA&OMEGATrans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R AOD508 DPAK(T/R) ALPHA&OMEGA SEMI TAOD508
Anzahl je Verpackung: 100 Stücke
auf Bestellung 84 Stücke:
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AOD508Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 22A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
auf Bestellung 18993 Stücke:
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13+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.81 EUR
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AOD508Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
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AOD508Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 22A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
auf Bestellung 17500 Stücke:
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2500+0.71 EUR
5000+0.67 EUR
7500+0.64 EUR
12500+0.61 EUR
17500+0.58 EUR
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AOD510Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 45A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 15 V
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AOD512Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 27A TO252
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AOD512Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 27A TO252
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AOD514Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK T/R
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AOD514Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
auf Bestellung 3152 Stücke:
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14+1.59 EUR
22+0.99 EUR
100+0.64 EUR
500+0.49 EUR
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AOD514
Produktcode: 209542
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Transistoren > MOSFET N-CH
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AOD514ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
auf Bestellung 2328 Stücke:
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232+0.37 EUR
262+0.32 EUR
500+0.29 EUR
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AOD514Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
auf Bestellung 2500 Stücke:
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AOD514_050Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
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AOD516
Produktcode: 171960
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Produkt ist nicht verfügbar
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AOD516Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/46A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V
Produkt ist nicht verfügbar
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AOD516Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/46A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V
Produkt ist nicht verfügbar
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AOD516_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V
Produkt ist nicht verfügbar
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AOD516_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V
Produkt ist nicht verfügbar
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AOD516_050Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 18A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V
Produkt ist nicht verfügbar
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AOD516_051Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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AOD518Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A/54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
Produkt ist nicht verfügbar
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AOD518Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A/54A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
Produkt ist nicht verfügbar
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AOD518_050Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A TO252
Produkt ist nicht verfügbar
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AOD518_051Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO-252
Produkt ist nicht verfügbar
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AOD520Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Produkt ist nicht verfügbar
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AOD522Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Produkt ist nicht verfügbar
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AOD522PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/46A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
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AOD526_DELTAAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 50A TO252
Produkt ist nicht verfügbar
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AOD528Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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AOD536Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 28 Stücke
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AOD536Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD538Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 34A
Produkt ist nicht verfügbar
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AOD538Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD558Alpha & Omega Semiconductor Inc.Description: 30V N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD558Alpha & Omega Semiconductor30V N-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD558Alpha & Omega Semiconductor Inc.Description: 30V N-CHANNEL MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
FET Type: N-Channel
auf Bestellung 2148 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.82 EUR
19+1.13 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
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AOD5B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 23A 54.4W 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD5B60DALPHA & OMEGA SEMICONDUCTORCategory: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 21.7W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
Turn-on time: 27ns
Turn-off time: 124ns
auf Bestellung 4563 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.94 EUR
95+0.9 EUR
99+0.87 EUR
100+0.86 EUR
Mindestbestellmenge: 91 Stücke
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AOD5B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 23A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
Produkt ist nicht verfügbar
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AOD5B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 23A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
auf Bestellung 723 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.77 EUR
10+2.39 EUR
100+1.62 EUR
500+1.27 EUR
Mindestbestellmenge: 6 Stücke
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AOD5B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 10A TO-252
Power - Max: 69 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.27 EUR
11+2.07 EUR
100+1.39 EUR
500+1.09 EUR
1000+1 EUR
Mindestbestellmenge: 7 Stücke
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AOD5B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 10A TO-252
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 69 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Produkt ist nicht verfügbar
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AOD5B65M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD5B65M1ALPHA & OMEGA SEMICONDUCTORCategory: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 5A
Power dissipation: 28W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 15A
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Turn-on time: 21ns
Turn-off time: 157ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.08mJ
Produkt ist nicht verfügbar
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AOD5B65MQ1EALPHA & OMEGA SEMICONDUCTORCategory: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 21W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 5A
Power dissipation: 21W
Case: TO252
Gate-emitter voltage: ±20V
Pulsed collector current: 15A
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
auf Bestellung 2472 Stücke:
Lieferzeit 14-21 Tag (e)
80+1.07 EUR
136+0.63 EUR
180+0.48 EUR
195+0.44 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 80 Stücke
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AOD5B65MQ1EAlpha & Omega Semiconductor Inc.Description: IGBT 5A 650V TO252
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Gate Charge: 8.8 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 90µJ (on), 60µJ (off)
Td (on/off) @ 25°C: 7ns/78ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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AOD5B65N1ALPHA & OMEGA SEMICONDUCTORCategory: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 5A
Power dissipation: 21W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 15A
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 2.5V
Turn-off switching energy: 0.049mJ
Turn-on switching energy: 0.081mJ
Turn-on time: 23ns
Turn-off time: 114ns
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.19 EUR
106+0.81 EUR
119+0.71 EUR
250+0.65 EUR
Mindestbestellmenge: 72 Stücke
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AOD5B65N1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8ns/73ns
Switching Energy: 81µJ (on), 49µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.2 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 52 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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