Produkte > DMT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMT3020LFDF-13 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 2469 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 2888 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDFQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Pulsed drain current: 40A Power dissipation: 0.4W Gate charge: 7nC Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFQ-7 | DIODES INC. | Description: DIODES INC. - DMT3020LFDFQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 8.4 A, 0.013 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDFQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDFQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K | auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDFQ-7 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A Automotive AEC-Q101 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFQ-7 | DIODES INC. | Description: DIODES INC. - DMT3020LFDFQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 8.4 A, 0.013 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Pulsed drain current: 40A Power dissipation: 1.1W Gate charge: 7nC Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 28mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3023 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDFW-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type UXG) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFW-7 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type UXG) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFWQ-13 | Diodes Incorporated | Description: IC Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: U-DFN2020-6 (SWP) (Type UXG) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDFWQ-7 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type UXG) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFVW | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFVW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFVW-7 | Diodes Zetex | 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 38A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFVW-7 | Diodes Zetex | 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A 8-Pin SO T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO | auf Bestellung 1258 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LSD-13 | Diodes Incorporated | MOSFETs 30V, SO-8 Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 2037 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LSDQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Pulsed drain current: 50A Power dissipation: 1.5W Gate charge: 7nC Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 32mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LSDQ-13 | DIODES INC. | Description: DIODES INC. - DMT3020LSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 16 A, 16 A, 0.014 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 16A Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 961 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A Automotive AEC-Q101 8-Pin SO T/R | auf Bestellung 1244 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A Automotive AEC-Q101 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K | auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LSDQ-13 | DIODES INC. | Description: DIODES INC. - DMT3020LSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 16 A, 16 A, 0.014 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 16A Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 961 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A Automotive AEC-Q101 8-Pin SO T/R | auf Bestellung 1244 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LSDQ-13 | Diodes | Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020UFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020UFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 860mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020UFDB-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Pulsed drain current: 35A Power dissipation: 1.3W Gate charge: 8.8nC Polarisation: unipolar Drain current: 5.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 30mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020UFDB-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 357000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020UFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.5A 6UDFN Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 860mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 357000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020UFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K | auf Bestellung 2740 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3022UEV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3022UEV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A POWERDI3333 Supplier Device Package: PowerDI3333-8 (Type UXD) Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 900mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3022UEV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A POWERDI3333 Supplier Device Package: PowerDI3333-8 (Type UXD) Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 900mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3022UEV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT30M9LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Pulsed drain current: 400A Power dissipation: 2.6W Gate charge: 160.5nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 1.6mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT30M9LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT30M9LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V | auf Bestellung 2487 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT30M9LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M1LPSW-13 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M1LPSWQ-13 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M6LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 35.8A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 497500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT31M6LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M6LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 35.8A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 499945 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT31M7LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A PWRDI5060 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M7LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M7LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M8LFVW-13 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M8LFVW-7 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M8LFVWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8/SWP T&R 3K | auf Bestellung 2926 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT31M8LFVWQ-7 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M9LFVW-13 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT31M9LFVW-7 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M4LFG-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 1.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M4LFG-7 | DIODES INC. | Description: DIODES INC. - DMT32M4LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1400 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1400µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1412 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M4LFG-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 1.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M4LFG-7 | DIODES INC. | Description: DIODES INC. - DMT32M4LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1400 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1400µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1412 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M4LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M4LPSW-13 | DIODES INC. | Description: DIODES INC. - DMT32M4LPSW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1500 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 83W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1500µohm | auf Bestellung 2405 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M4LPSW-13 | DIODES INC. | Description: DIODES INC. - DMT32M4LPSW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1500 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 83W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1500µohm | auf Bestellung 2405 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 833856 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LFG-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 831000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M5LFG-7 | DIODES INC. | Description: DIODES INC. - DMT32M5LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1400 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 50W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1400µohm | auf Bestellung 1924 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LFG-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 3880 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M5LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 29928 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LFG-7 | DIODES INC. | Description: DIODES INC. - DMT32M5LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 1400 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 50W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1400µohm | auf Bestellung 1924 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M5LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LPS-13 | DIODES INC. | Description: DIODES INC. - DMT32M5LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 150 A, 1600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1600µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V | auf Bestellung 71806 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LPS-13 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 25V-30V | auf Bestellung 3692 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LPS-13 | DIODES INC. | Description: DIODES INC. - DMT32M5LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 150 A, 1600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1600µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT32M5LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4389 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M5LPSW-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 3.2W Case: PowerDI5060-8 On-state resistance: 2mΩ Mounting: SMD Gate charge: 34nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M6LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Part Status: Active Supplier Device Package: PowerDI3333-8 (Type G) Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 23847 Stücke: Lieferzeit 10-14 Tag (e) |
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