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NTE2371NTE ElectronicsCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.21 EUR
7+12.78 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2372NTE Electronics, IncDescription: MOSFET P-CHANNEL 200V 3.5A TO220
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2373NTE Electronics, IncDescription: MOSFET P-CHANNEL 200V 11A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.97 EUR
10+14.22 EUR
20+13.48 EUR
50+12.73 EUR
100+12.42 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2373NTE Electronics, Inc.Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2374NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2374NTE Electronics, IncDescription: MOSFET N-CHANNEL 200V 18A TO220
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2374NTE Electronics, Inc.Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2375NTE Electronics, IncDescription: MOSFET N-CHANNEL 100V 41A TO247
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.8 EUR
10+20.72 EUR
20+19.62 EUR
50+18.54 EUR
100+18.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2376NTE Electronics, Inc.Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
7+25.23 EUR
25+19.22 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2376NTE Electronics, IncDescription: MOSFET N-CHANNEL 200V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.18 EUR
10+23.92 EUR
20+22.66 EUR
50+21.41 EUR
100+20.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2377NTEN-MOSFET; полевой; 900В; 8А; Idm: 36А; 150Вт; TO3P (аналог 2SK1358) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2378NTE Electronics, IncDescription: MOSFET N-CHANNEL 900V 5A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.61 EUR
10+13.89 EUR
20+13.15 EUR
50+12.42 EUR
100+12.13 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2379NTE Electronics, IncDescription: MOSFET N-CHANNEL 600V 6.2A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.13 EUR
10+8.68 EUR
20+8.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE238NTE ELECTRONICSDescription: NTE ELECTRONICS - NTE238 - BIPOLAR TRANSISTOR, NPN, 750V, TO-3
Transistormontage: Through Hole
DC-Stromverstärkung hFE: 8
Verlustleistung Pd: 100
Übergangsfrequenz ft: -
Bauform - Transistor: TO-3
Kollektor-Emitter-Spannung V(br)ceo: 750
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: NPN
DC-Kollektorstrom: 8
Betriebstemperatur, max.: 150
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE238NTE Electronics, Inc.Trans GP BJT NPN 750V 8A 3-Pin(2+Tab) TO-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2380NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 2.5A TO220
auf Bestellung 1578 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2380NTE Electronics, Inc.Trans MOSFET N-CH Si 500V 2.5A 3-Pin(3+Tab) TO-220
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
15+12.25 EUR
50+9.28 EUR
100+8.79 EUR
250+8.09 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2380NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 40W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 40W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2381NTE Electronics, IncDescription: MOSFET P-CHANNEL 500V 2.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.79 EUR
10+22.6 EUR
20+21.41 EUR
50+20.23 EUR
100+19.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2381NTE Electronics, Inc.Trans MOSFET P-CH Si 500V 2.7A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2382NTE Electronics, IncDescription: MOSFET N-CHANNEL 100V 9.2A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 659 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.03 EUR
10+9.53 EUR
20+9.03 EUR
50+8.52 EUR
100+8.33 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2382NTE Electronics, Inc.Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2383NTE Electronics, Inc.Trans MOSFET P-CH 100V 10.5A 3-Pin(3+Tab) TO-220
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
11+17.21 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2384NTE Electronics, Inc.Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab)
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+118.76 EUR
3+115.18 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2384NTE Electronics, IncDescription: MOSFET N-CHANNEL 900V 6A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
1+106.48 EUR
10+101.16 EUR
20+95.84 EUR
50+90.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2385NTE Electronics, Inc.Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2385NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 8A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 815 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.04 EUR
10+14.28 EUR
20+13.53 EUR
50+12.78 EUR
100+12.48 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2386NTE Electronics, IncDescription: MOSFET N-CHANNEL 600V 6.2A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
1+183.28 EUR
10+174.11 EUR
20+164.96 EUR
50+155.78 EUR
100+152.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2387NTE Electronics, Inc.Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2387NTE Electronics, Inc.Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
6+29.58 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2388NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2388NTE ELECTRONICSDescription: NTE ELECTRONICS - NTE2388 - N CHANNEL MOSFET, 200V, 18A, TO-220
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 18
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 125
Bauform - Transistor: TO-220
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.18
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2388NTE Electronics, IncDescription: MOSFET N-CHANNEL 200V 18A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
auf Bestellung 1162 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.18 EUR
10+15.37 EUR
20+14.58 EUR
50+13.76 EUR
100+13.45 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2388NTE Electronics, Inc.Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2389NTE Electronics, IncDescription: MOSFET N-CHANNEL 60V 35A TO220
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2390NTE Electronics, Inc.Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2390NTE Electronics, IncDescription: MOSFET N-CHANNEL 60V 12A TO220
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2392NTE Electronics, Inc.Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2392NTE Electronics, IncDescription: MOSFET N-CHANNEL 100V 40A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
1+68.62 EUR
10+65.18 EUR
20+61.74 EUR
50+58.33 EUR
100+56.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2393NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 10A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.42 EUR
10+28.88 EUR
20+27.37 EUR
50+25.85 EUR
100+25.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2393NTE ELECTRONICSDescription: NTE ELECTRONICS - NTE2393 - N CHANNEL MOSFET, 500V, 9A, TO-3P
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 500
Dauer-Drainstrom Id: 9
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 150
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.7
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2394NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 14A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.44 EUR
10+26.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2395NTE Electronics, IncDescription: MOSFET N-CHANNEL 60V 50A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.46 EUR
10+10.89 EUR
20+10.31 EUR
50+9.73 EUR
100+9.51 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2395NTE Electronics, Inc.Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2396NTE Electronics, IncDescription: MOSFET N-CHANNEL 100V 28A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.33 EUR
10+10.77 EUR
20+10.2 EUR
50+9.64 EUR
100+9.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2396ANTE Electronics, IncDescription: MOSFET N-CHANNEL 100V 33A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.64 EUR
10+3.45 EUR
20+3.28 EUR
50+3.09 EUR
100+3.01 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2396ANTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 110A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 110A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2397NTE Electronics, IncDescription: MOSFET N-CHANNEL 400V 10A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.17 EUR
10+11.57 EUR
20+10.95 EUR
50+10.34 EUR
100+10.09 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2397NTE Electronics, Inc.Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2398NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 4.5A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.05 EUR
10+13.34 EUR
20+12.65 EUR
50+11.94 EUR
100+11.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2398NTE Electronics, Inc.Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
14+12.64 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2399NTE Electronics, IncDescription: MOSFET N-CHANNEL 1KV 3.1A TO220
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2399NTE Electronics, Inc.Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE24NTE Electronics, IncDescription: TRANS NPN 80V 1A TO237
Packaging: Bag
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-237
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 850 mW
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE240NTE Electronics, Inc.Trans GP BJT PNP 300V 0.5A 3-Pin(3+Tab) TO-220N
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
11+16.04 EUR
12+14.63 EUR
25+9.37 EUR
50+8.32 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE240NTE Electronics, IncDescription: TRANS PNP 300V 0.5A TO202N
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Packaging: Bag
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-202N
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Current - Collector Cutoff (Max): 200nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 3mA, 30mA
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.29 EUR
10+10.72 EUR
20+10.16 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2401NTE Electronics, IncDescription: RF TRANS PNP 30V 450MHZ SOT23
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 25mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bag
Part Status: Active
Supplier Device Package: SOT-23
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 60Hz ~ 149Hz
Frequency - Transition: 450MHz
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.76 EUR
20+1.67 EUR
30+1.58 EUR
40+1.5 EUR
50+1.46 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2402NTE Electronics, IncDescription: RF TRANS NPN 15V 5GHZ SOT23
Part Status: Active
Supplier Device Package: SOT-23
Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 14mA, 10V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 200mW
Gain: 18dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bag
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2403NTE Electronics, IncDescription: RF TRANS PNP 15V 5GHZ SOT23
Part Status: Active
Supplier Device Package: SOT-23
Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 14mA, 10V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 200mW
Gain: 18dB
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bag
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2404NTE Electronics, IncDescription: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
auf Bestellung 2278 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
20+1.49 EUR
30+1.42 EUR
40+1.33 EUR
50+1.3 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2405NTE Electronics, IncDescription: TRANS PNP DARL 30V 0.3A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bag
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
auf Bestellung 808 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
20+2.09 EUR
50+1.96 EUR
100+1.93 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2405NTE ElectronicsCategory: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Current gain: 4k
Frequency: 220MHz
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.4 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2406NTE Electronics, IncDescription: TRANS NPN 40V 0.6A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.44 EUR
20+1.37 EUR
30+1.3 EUR
40+1.23 EUR
50+1.2 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2407NTE Electronics, IncDescription: TRANS PNP 60V 0.6A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
auf Bestellung 2492 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
20+1.48 EUR
30+1.39 EUR
40+1.32 EUR
50+1.29 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2407NTE Electronics, Inc.Trans GP BJT PNP 60V 0.6A 3-Pin SOT-23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2408NTE Electronics, IncDescription: TRANS NPN 65V 0.1A SOT23
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bag
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.38 EUR
20+1.31 EUR
30+1.25 EUR
40+1.18 EUR
50+1.14 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2408NTE Electronics, Inc.Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTE2408NTE Electronics, Inc.Trans GP BJT NPN 65V 0.1A 3-Pin SOT-23
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2409NTE Electronics, IncDescription: TRANS PNP 65V 0.1A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.4 EUR
20+1.33 EUR
30+1.26 EUR
40+1.19 EUR
50+1.17 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE241NTE Electronics, IncDescription: TRANS NPN 80V 4A TO220
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 2.5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.67 EUR
10+2.53 EUR
20+2.39 EUR
50+2.26 EUR
100+2.2 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2410NTE Electronics, Inc.Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2410NTE Electronics, IncDescription: TRANS NPN 160V 0.6A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
20+1.42 EUR
30+1.33 EUR
40+1.26 EUR
50+1.24 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2411NTE Electronics, IncDescription: TRANS PNP 150V 0.5A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
auf Bestellung 9496 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.63 EUR
20+1.55 EUR
30+1.48 EUR
40+1.39 EUR
50+1.36 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2412NTE Electronics, IncDescription: TRANS NPN 300V 0.1A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
auf Bestellung 1701 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
20+1.49 EUR
30+1.42 EUR
40+1.33 EUR
50+1.3 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2413NTE Electronics, IncDescription: TRANS PNP 300V 0.05A SOT23
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 310 mW
auf Bestellung 1222 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
20+1.49 EUR
30+1.42 EUR
40+1.33 EUR
50+1.3 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2414NTE Electronics, IncDescription: T-NPN SI WITH 10K RES
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.63 EUR
20+1.55 EUR
30+1.48 EUR
40+1.39 EUR
50+1.36 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2415NTE Electronics, IncDescription: T-PNP SI WITH 10K RES
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.49 EUR
20+1.42 EUR
30+1.33 EUR
40+1.26 EUR
50+1.24 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2416NTE ElectronicsCategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTE2416NTE Electronics, IncDescription: T-NPN SI WITH 22K RES
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
20+1.59 EUR
30+1.51 EUR
40+1.43 EUR
50+1.39 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2417NTE Electronics, IncDescription: T-PNP SI WITH 22K RES
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.3 EUR
20+1.24 EUR
30+1.17 EUR
40+1.11 EUR
50+1.07 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2419NTE Electronics, IncDescription: T-PNP SI WITH 47K RES
Packaging: Bag
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.3 EUR
20+1.24 EUR
30+1.17 EUR
40+1.11 EUR
50+1.07 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE242NTE Electronics, IncDescription: TRANS PNP 80V 4A TO220
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 2.5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
10+2.78 EUR
20+2.64 EUR
50+2.49 EUR
100+2.43 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2426NTE Electronics, Inc.Trans Darlington NPN 80V 0.5A 1000mW 4-Pin(3+Tab) SOT-89
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
23+7.74 EUR
25+7.1 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2426NTE Electronics, IncDescription: TRANS NPN DARL 80V 0.5A SOT89
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bag
auf Bestellung 2157 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.75 EUR
10+3.56 EUR
20+3.37 EUR
50+3.19 EUR
100+3.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2427NTE Electronics, IncDescription: TRANS PNP DARL 80V 0.5A SOT89
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bag
auf Bestellung 2103 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+3.62 EUR
20+3.44 EUR
50+3.25 EUR
100+3.17 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2427NTE ElectronicsCategory: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 0.5A; 1W; SOT89
Mounting: SMD
Collector-emitter voltage: 80V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Current gain: 1k
Case: SOT89
Collector current: 0.5A
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.55 EUR
37+2.31 EUR
38+2.26 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2427NTE Electronics, Inc.Trans Darlington NPN 80V 0.5A 1000mW
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
20+11.04 EUR
25+10.15 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2428NTE Electronics, IncDescription: TRANS NPN 80V 1A SOT89
Packaging: Bag
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 1904 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+4.02 EUR
20+3.81 EUR
50+3.61 EUR
100+3.52 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2429NTE Electronics, Inc.Trans GP BJT PNP 1A 1000mW 4-Pin(3+Tab) SOT-89
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
10+18.12 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2429NTE Electronics, IncDescription: TRANS PNP 80V 1A SOT89
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bag
Power - Max: 1 W
auf Bestellung 1181 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.02 EUR
10+4.77 EUR
20+4.52 EUR
50+4.27 EUR
100+4.16 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE243NTE Electronics, IncDescription: TRANS NPN DARL 80V 8A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 100 W
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
10+6.89 EUR
20+6.51 EUR
50+6.15 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE243NTE ELECTRONICSDescription: NTE ELECTRONICS - NTE243 - DARLINGTON TRANSISTOR, NPN, 80V, TO-3
Transistormontage: Through Hole
DC-Stromverstärkung hFE: 750
Verlustleistung Pd: 100
Übergangsfrequenz ft: -
Bauform - Transistor: TO-3
Kollektor-Emitter-Spannung V(br)ceo: 80
Anzahl der Pins: 2
Produktpalette: -
Wandlerpolarität: NPN
DC-Kollektorstrom: 8
Betriebstemperatur, max.: 200
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE243NTE Electronics, Inc.Trans Darlington NPN 80V 8A 100000mW 3-Pin(2+Tab) TO-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE2430NTE Electronics, Inc.Trans GP BJT NPN 350V 1A 1000mW 4-Pin(3+Tab) SOT-89
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
21+8.6 EUR
25+7.91 EUR
50+4.36 EUR
100+2.44 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2430NTE Electronics, IncDescription: TRANS NPN 350V 1A SOT89
Packaging: Bag
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1 W
auf Bestellung 491 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+3.94 EUR
20+3.72 EUR
50+3.52 EUR
100+3.44 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE2431NTE Electronics, IncDescription: TRANS PNP 300V 1A SOT89
Packaging: Bag
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.53 EUR
10+3.37 EUR
20+3.19 EUR
50+3.01 EUR
100+2.93 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE244NTE Electronics, IncDescription: TRANS PNP DARL 80V 8A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 100 W
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.82 EUR
10+11.22 EUR
20+10.64 EUR
50+10.03 EUR
100+9.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE244NTE ELECTRONICSDescription: NTE ELECTRONICS - NTE244 - DARLINGTON TRANSISTOR, PNP, -80V, TO-3
Transistormontage: Through Hole
DC-Stromverstärkung hFE: 750
Qualifikation: -
Dauer-Kollektorstrom: 8
Verlustleistung: 100
Bauform - Transistor: TO-3
Anzahl der Pins: 2
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80
Wandlerpolarität: PNP
Übergangsfrequenz: -
Betriebstemperatur, max.: 200
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTE244NTE Electronics, Inc.Trans Darlington PNP 80V 8A 100000mW 3-Pin(2+Tab) TO-3
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
87+2.03 EUR
Mindestbestellmenge: 87 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTE244NTE Electronics, Inc.Trans Darlington PNP 80V 8A 100000mW 3-Pin(2+Tab) TO-3
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
87+2.03 EUR
Mindestbestellmenge: 87 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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