Produkte > 5LN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||
|---|---|---|---|---|---|---|
| 5LN01C-TB-E | onsemi | Description: MOSFET N-CH 50V 100MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: SC-59-3/CP3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01C-TB-E | ON Semiconductor | MOSFET SWITCHING DEVICE | auf Bestellung 7256 Stücke: Lieferzeit 14-28 Tag (e) | |||
| 5LN01C-TB-E | onsemi | Description: MOSFET N-CH 50V 100MA 3CP Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: SC-59-3/CP3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | auf Bestellung 574961 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN01C-TB-E | onsemi | Description: MOSFET N-CH 50V 100MA 3CP Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: SC-59-3/CP3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01C-TB-E | ON Semiconductor | Trans MOSFET N-CH Si 50V 0.1A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||
| 5LN01C-TB-E | ONSEMI | Description: ONSEMI - 5LN01C-TB-E - MOSFET, N-CH, 50V, 0.1A, SOT-23 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 574961 Stücke: Lieferzeit 14-21 Tag (e) | |||
| 5LN01C-TB-EX | onsemi | Description: MOSFET N-CH 50V 100MA 3CP Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) | Produkt ist nicht verfügbar | |||
| 5LN01C-TB-H | ON Semiconductor | Trans MOSFET N-CH Si 50V 0.1A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||
| 5LN01C-TB-H | onsemi | Description: MOSFET N-CH 50V 100MA 3CP | Produkt ist nicht verfügbar | |||
| 5LN01C-TB-H | ON Semiconductor | MOSFET NCH 1.5V DRIVE SERIES | Produkt ist nicht verfügbar | |||
| 5LN01M-TL-E | onsemi | Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01M-TL-E | ONSEMI | Description: ONSEMI - 5LN01M-TL-E - 5LN01M-TL-E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) | |||
| 5LN01M-TL-E | onsemi | Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN01M-TL-E | ON Semiconductor | Trans MOSFET N-CH Si 50V 0.1A 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||
| 5LN01M-TL-H | onsemi | Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01M-TL-H | ON Semiconductor | MOSFET SWITCHING DEVICE | auf Bestellung 3577 Stücke: Lieferzeit 14-28 Tag (e) | |||
| 5LN01M-TL-H | onsemi | Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01M-TL-H | ON Semiconductor | auf Bestellung 760 Stücke: Lieferzeit 21-28 Tag (e) | ||||
| 5LN01M-TL-H | onsemi | Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | auf Bestellung 23000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN01M-TL-H | ONSEMI | Description: ONSEMI - 5LN01M-TL-H - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 23000 Stücke: Lieferzeit 14-21 Tag (e) | |||
| 5LN01S-TL-E | onsemi | Description: MOSFET N-CH 50V 100MA SMCP Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: SMCP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01S-TL-E | onsemi | Description: MOSFET N-CH 50V 100MA SMCP Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: SMCP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN01S-TL-E | ONSEMI | Description: ONSEMI - 5LN01S-TL-E - 5LN01S-TL-E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | |||
| 5LN01SP | ON Semiconductor | Trans MOSFET N-CH Si 50V 0.1A 3-Pin SPA Bag | Produkt ist nicht verfügbar | |||
| 5LN01SP | onsemi | Description: MOSFET N-CH 50V 100MA 3SPA | Produkt ist nicht verfügbar | |||
| 5LN01SP-AC | onsemi | Description: MOSFET N-CH 50V 100MA 3SPA | Produkt ist nicht verfügbar | |||
| 5LN01SP-AC | onsemi | Description: MOSFET N-CH 50V 100MA 3SPA | Produkt ist nicht verfügbar | |||
| 5LN01SS-TL-E | onsemi | Description: MOSFET N-CH 50V 100MA 3SSFP Packaging: Tape & Reel (TR) Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01SS-TL-E | ON Semiconductor | Trans MOSFET N-CH Si 50V 0.1A 3-Pin SSFP T/R | Produkt ist nicht verfügbar | |||
| 5LN01SS-TL-E | ONSEMI | Description: ONSEMI - 5LN01SS-TL-E - 5LN01SS-TL-E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 76000 Stücke: Lieferzeit 14-21 Tag (e) | |||
| 5LN01SS-TL-E | ON Semiconductor | MOSFET SWITCHING DEVICE | auf Bestellung 7667 Stücke: Lieferzeit 14-28 Tag (e) | |||
| 5LN01SS-TL-E | ON Semiconductor | auf Bestellung 7724 Stücke: Lieferzeit 21-28 Tag (e) | ||||
| 5LN01SS-TL-E | Sanyo | Description: N-CHANNEL SILICON MOSFET Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V | auf Bestellung 7980 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN01SS-TL-E | onsemi | Description: MOSFET N-CH 50V 100MA 3SSFP Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN01SS-TL-H | onsemi | Description: MOSFET N-CH 50V 100MA 3SSFP Packaging: Tape & Reel (TR) Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | Produkt ist nicht verfügbar | |||
| 5LN01SS-TL-H | ON Semiconductor | Trans MOSFET N-CH Si 50V 0.1A 3-Pin SSFP T/R | Produkt ist nicht verfügbar | |||
| 5LN01SS-TL-H | onsemi | Description: MOSFET N-CH 50V 100MA 3SSFP Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: 3-SSFP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V | auf Bestellung 688000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 5LN02M-TL | SANYO | SOT323 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |