Produkte > G1K
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
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| G1K/1 | Vishay Semiconductors | Rectifiers | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K1P06HH | Goford Semiconductor | Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V | auf Bestellung 4550 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K1P06HH | GOFORD Semiconductor | P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223 | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G1K1P06HH | Goford Semiconductor | Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K1P06LH | Goford Semiconductor | Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K1P06LH | Goford Semiconductor | Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K1P06LH | GOFORD Semiconductor | G1K1P06LH | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G1K1P06LL | Goford Semiconductor | Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K1P06LL | GOFORD Semiconductor | P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G1K1P06LL | Goford Semiconductor | Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH- Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V | auf Bestellung 1656 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K2C10S2 | Goford Semiconductor | Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K2C10S2 | Goford Semiconductor | Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K2C10S2 | Goford Semiconductor | Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K3N10G | Goford Semiconductor | Description: N100V, 5A,RD<130M@10V,VTH1V~2V, Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K3N10G | Goford Semiconductor | Description: N100V, 5A,RD<130M@10V,VTH1V~2V, Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V | auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K3N10LL | Goford Semiconductor | Description: MOSFET N-CH 100V 3.4A SOT-23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1K3N10LL | Goford Semiconductor | Description: MOSFET N-CH 100V 3.4A SOT-23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K3N10LL | Goford Semiconductor | Description: MOSFET N-CH 100V 3.4A SOT-23-6L Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V | auf Bestellung 2740 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K8P06S2 | Goford Semiconductor | Description: MOSFET 2P-CH 60V 3.2A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | auf Bestellung 3958 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1K8P06S2 | Goford Semiconductor | Description: MOSFET 2P-CH 60V 3.2A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| G1KQ | Yangjie Technology | Description: Diodes - Rectifiers - Single SOD Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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