Die Produkte nexperia usa inc.
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Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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PESD3V3U1UA,115 |
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Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM SOD323 Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 4.5V Unidirectional Channels: 1 Supplier Device Package: SOD-323 Voltage - Reverse Standoff (Typ): 3.3V (Max) Capacitance @ Frequency: 2.6pF @ 1MHz Applications: Automotive Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
auf Bestellung 296240 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 390072 Stücke - Preis und Lieferfrist anzeigen
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IP4223CZ6,125 |
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Nexperia USA Inc. |
Description: TVS DIODE 6TSOP Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Steering (Rail to Rail) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power Line Protection: Yes Applications: General Purpose Capacitance @ Frequency: 1.5pF @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1417571 Stücke - Preis und Lieferfrist anzeigen
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PESD15VL2BT,215 |
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Nexperia USA Inc. |
Description: TVS DIODE 15V 44V SOT23 Voltage - Clamping (Max) @ Ipp: 44V Voltage - Breakdown (Min): 17.1V Voltage - Reverse Standoff (Typ): 15V (Max) Bidirectional Channels: 2 Type: Zener Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: PESD*L2B Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TA) Capacitance @ Frequency: 16pF @ 1MHz Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 200W Current - Peak Pulse (10/1000µs): 5A (8/20µs) |
auf Bestellung 85588 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 18410 Stücke - Preis und Lieferfrist anzeigen
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2N7002P,235 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 360MA TO236AB Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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NX7002AK,215 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236AB Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active |
auf Bestellung 307496 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 230421 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 190MA TO236AB Part Status: Active Supplier Device Package: TO-236AB Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 307899 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 230421 Stücke - Preis und Lieferfrist anzeigen
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BSH121,135 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 300MA SOT323 Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V Vgs(th) (Max) @ Id: 1.3V @ 1mA Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Mounting Type: Surface Mount Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drain to Source Voltage (Vdss): 75V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Operating Temperature: -65°C ~ 150°C (TJ) Power Dissipation (Max): 700mW (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25581 Stücke - Preis und Lieferfrist anzeigen
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BSH105,235 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.05A TO236AB Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Not For New Designs Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 570mV @ 1mA Power Dissipation (Max): 417mW (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 11781 Stücke - Preis und Lieferfrist anzeigen
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PMT21EN,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.4A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Power Dissipation (Max): 820mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PMPB20ENZ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A 6DFN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PSMN8R5-100ESQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 61283 Stücke - Preis und Lieferfrist anzeigen
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PMXB40UNEZ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 12V 3.2A DFN1010D-3 Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 12V 3.2A DFN1010D-3 Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1010D-3 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 595 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
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BSS192,135 |
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Nexperia USA Inc. |
Description: MOSFET P-CH 240V 200MA SOT89 Supplier Device Package: SOT-89 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 560mW (Ta), 12.5W (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drain to Source Voltage (Vdss): 240V Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Base Part Number: BSS192 Package / Case: TO-243AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PHK04P02T,518 |
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Nexperia USA Inc. |
Description: MOSFET P-CH 16V 4.66A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 600mV @ 1mA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 193508 Stücke - Preis und Lieferfrist anzeigen
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BUK92150-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 11A DPAK Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
Nexperia USA Inc. |
Description: MOSFET N-CH 55V 11A DPAK FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 36W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 338pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 125mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) |
auf Bestellung 11108 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK9Y59-60E,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 16.7A LFPAK56 Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 37W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Technology: MOSFET (Metal Oxide) Base Part Number: BUK9Y59 Package / Case: SC-100, SOT-669 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23642 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y153-100EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 9.4A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V Power Dissipation (Max): 37.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3616 Stücke - Preis und Lieferfrist anzeigen
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PHK13N03LT,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 13.8A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25764 Stücke - Preis und Lieferfrist anzeigen
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PHD20N06T,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 18A DPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DPAK Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BAV23,215 |
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Nexperia USA Inc. |
Description: DIODE ARRAY GP 200V 225MA SOT143 Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io) (per Diode): 225mA (DC) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Diode Configuration: 2 Independent Part Status: Active Base Part Number: BAV23 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SOT-143B Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Operating Temperature - Junction: 150°C (Max) Current - Reverse Leakage @ Vr: 100nA @ 200V Reverse Recovery Time (trr): 50ns |
auf Bestellung 105720 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 1966684 Stücke - Preis und Lieferfrist anzeigen
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BUK9277-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 18A DPAK Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PHK12NQ03LT,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 11.8A SOT96 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 16V Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36500 Stücke - Preis und Lieferfrist anzeigen
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PHD97NQ03LT,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 75A DPAK Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 107W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 12V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.15V @ 1mA Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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BUK9Y113-100E,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 12A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1282 Stücke - Preis und Lieferfrist anzeigen
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BUK9Y72-80E,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 15A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2475 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y72-80EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 16A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK9880-55,135 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 7.5A SOT223 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
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PSMN3R5-30YL,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2458 pF @ 12 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4240 Stücke - Preis und Lieferfrist anzeigen
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BUK9245-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 28A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8463 Stücke - Preis und Lieferfrist anzeigen
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1PS79SB10,115 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 200MA SOD523 Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SOD-523 Current - Average Rectified (Io): 200mA (DC) Capacitance @ Vr, F: 10pF @ 1V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14426 Stücke - Preis und Lieferfrist anzeigen
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74LVC2G14GM-Q100X |
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Nexperia USA Inc. |
Description: IC INVERT SCHMITT 2CH 2-IN 6XSON Features: Schmitt Trigger Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Packaging: Tape & Reel (TR) Current - Quiescent (Max): 4 µA Number of Circuits: 2 Part Status: Active Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF Logic Level - Low: 1.1V ~ 2.5V Logic Level - High: 1.7V ~ 3.8V Supplier Device Package: 6-XSON, SOT886 (1.45x1) Number of Inputs: 2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9945 Stücke - Preis und Lieferfrist anzeigen
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PESD5V0X1UAB,115 |
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Nexperia USA Inc. |
Description: TVS DIODE 5VWM 9VC SOD523 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 2A (8/20µs) Capacitance @ Frequency: 1.55pF @ 1MHz Applications: Automotive Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9V (Typ) Voltage - Breakdown (Min): 5.8V Unidirectional Channels: 1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
Nexperia USA Inc. |
Description: TVS DIODE 5VWM 9VC SOD523 Current - Peak Pulse (10/1000µs): 2A (8/20µs) Capacitance @ Frequency: 1.55pF @ 1MHz Applications: Automotive Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9V (Typ) Voltage - Breakdown (Min): 5.8V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) |
auf Bestellung 1588 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PESD1USB3SZ |
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Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 5WLCSP Mounting Type: Surface Mount Package / Case: 5-UFBGA, WLCSP Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: 5-WLCSP (0.77x1.17) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 7A (8/20µs) Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Type: Zener |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 501 Stücke - Preis und Lieferfrist anzeigen
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BUK9575-55A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 20A TO220AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PSMN038-100YLX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 30A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 94.9W (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1693 Stücke - Preis und Lieferfrist anzeigen
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BUK9230-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 38A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±10V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 27mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK7237-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 32.3A DPAK Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V Power Dissipation (Max): 77W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 7500 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 9029 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 32.3A DPAK Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V Power Dissipation (Max): 77W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 9029 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 9029 Stücke - Preis und Lieferfrist anzeigen
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PHK18NQ03LT,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 20.3A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 12V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.15V @ 1mA Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK9840-55,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 5A SOT223 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK7230-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 38A DPAK Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1152pF @ 25V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Manufacturer: Nexperia USA Inc. Base Part Number: BUK7230 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6270 Stücke - Preis und Lieferfrist anzeigen
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PH7030AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 76A LFPAK56 Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 12 V Drain to Source Voltage (Vdss): 30 V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.15V @ 1mA Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9120 Stücke - Preis und Lieferfrist anzeigen
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PH6030AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 79A LFPAK Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 12V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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PHD38N02LT,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 44.7A DPAK Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 5V Drive Voltage (Max Rds On, Min Rds On): 5V Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: PHD38N02 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 57.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 20V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PH4030AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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BUK96180-100A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 11A D2PAK Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 54W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V Vgs (Max): ±15V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12222 Stücke - Preis und Lieferfrist anzeigen
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PMK35EP,518 |
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Nexperia USA Inc. |
Description: MOSFET P-CH 30V 14.9A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.9W (Tc) Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±25V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
Nexperia USA Inc. |
Description: MOSFET P-CH 30V 14.9A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.9W (Tc) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Drain to Source Voltage (Vdss): 30V |
auf Bestellung 2470 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: MOSFET P-CH 30V 14.9A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.9W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 2470 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK7K52-60EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 15.4A LFPAK Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Current - Continuous Drain (Id) @ 25°C: 15.4A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 339 Stücke - Preis und Lieferfrist anzeigen
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PSMN1R7-30YL,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 109W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1760 Stücke - Preis und Lieferfrist anzeigen
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PH5030AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 91A LFPAK Current - Continuous Drain (Id) @ 25°C: 91A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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BUK9K134-100EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Current - Continuous Drain (Id) @ 25°C: 8.5A Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 498 Stücke - Preis und Lieferfrist anzeigen
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BUK7K134-100EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 9.8A LFPAK56D Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Rds On (Max) @ Id, Vgs: 121mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V Current - Continuous Drain (Id) @ 25°C: 9.8A Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 32W Part Status: Active Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA FET Feature: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 469 Stücke - Preis und Lieferfrist anzeigen
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BUK9K25-40EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 18.2A 56LFPAK Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Current - Continuous Drain (Id) @ 25°C: 18.2A Part Status: Active Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PHD71NQ03LT,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 75A DPAK Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 120W (Tc) Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 64210 Stücke - Preis und Lieferfrist anzeigen
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PSMN038-100K,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V SOT96-1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK7219-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAK Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2108pF @ 25V Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: BUK7219 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1549 Stücke - Preis und Lieferfrist anzeigen
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BUK9215-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2916pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drain to Source Voltage (Vdss): 55V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 115W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12390 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 115W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2916pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Cut Tape (CT) Manufacturer: Nexperia USA Inc. |
auf Bestellung 2198 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 12390 Stücke - Preis und Lieferfrist anzeigen
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BUK9219-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 25V Vgs (Max): ±10V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: BUK9219 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 114W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13640 Stücke - Preis und Lieferfrist anzeigen
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BUK9226-75A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 45A DPAK Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK7620-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 54A D2PAK Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PSMN085-150K,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 150V 3.5A SOT96-1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15120 Stücke - Preis und Lieferfrist anzeigen
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74AHC1G4208GW-Q10H |
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Nexperia USA Inc. |
Description: IC DIVIDER OSCILLATOR 5TSSOP Number of Bits per Element: 8 Voltage - Supply: 2 V ~ 5.5 V Part Status: Active Supplier Device Package: 5-TSSOP Trigger Type: Negative Edge Direction: Up Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Divide-by-2 Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
74AHC1G4215GW-Q10H |
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Nexperia USA Inc. |
Description: IC DIVIDER OSCILLATOR 5TSSOP Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Divide-by-2 Direction: Up Number of Elements: 1 Number of Bits per Element: 15 Trigger Type: Negative Edge Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: 5-TSSOP Base Part Number: 74AHC1G4215 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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74AHC1G4208GWH |
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Nexperia USA Inc. |
Description: 8-STAGE DIVIDER AND OSCILLATOR Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Logic Type: Divide-by-2 Direction: Up Number of Elements: 1 Number of Bits per Element: 8 Trigger Type: Negative Edge Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: 5-TSSOP |
auf Bestellung 5996 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 1630 Stücke - Preis und Lieferfrist anzeigen
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74AHC1G4212GW-Q10H |
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Nexperia USA Inc. |
Description: 12-STAGE DIVIDER AND OSCILLATOR Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Trigger Type: Negative Edge Number of Bits per Element: 12 Number of Elements: 1 Direction: Up Logic Type: Divide-by-2 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 5995 Stücke![]() Lieferzeit 21-28 Tag (e) |
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74AHC1G4214GW-Q10H |
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Nexperia USA Inc. |
Description: 14-STAGE DIVIDER AND OSCILLATOR Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Trigger Type: Negative Edge Number of Bits per Element: 14 Number of Elements: 1 Direction: Up Logic Type: Divide-by-2 |
auf Bestellung 6000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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74AHC1G4214GWH |
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Nexperia USA Inc. |
Description: 74AHC1G4214GW/SOT353/UMT5 Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Trigger Type: Negative Edge Number of Bits per Element: 14 Number of Elements: 1 Direction: Up Logic Type: Divide-by-2 Part Status: Active |
auf Bestellung 5830 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 5761 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: 74AHC1G4214GW/SOT353/UMT5 Number of Bits per Element: 14 Voltage - Supply: 2 V ~ 5.5 V Part Status: Active Supplier Device Package: 5-TSSOP Trigger Type: Negative Edge Direction: Up Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Divide-by-2 Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 5761 Stücke - Preis und Lieferfrist anzeigen
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PZU7.5B,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 310MW SOD323F Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 310 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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74AHC1G4212GWH |
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Nexperia USA Inc. |
Description: 74AHC1G4212GW/SOT353/UMT5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Divide-by-2 Operating Temperature: -40°C ~ 125°C (TA) Direction: Up Trigger Type: Negative Edge Supplier Device Package: 5-TSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Number of Bits per Element: 12 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12338 Stücke - Preis und Lieferfrist anzeigen
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74AHC1G4215GWH |
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Nexperia USA Inc. |
Description: 15-STAGE DIVIDER AND OSCILLATOR Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Trigger Type: Negative Edge Number of Bits per Element: 15 Number of Elements: 1 Direction: Up Logic Type: Divide-by-2 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
auf Bestellung 5952 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: 15-STAGE DIVIDER AND OSCILLATOR Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Divide-by-2 Operating Temperature: -40°C ~ 125°C (TA) Direction: Up Trigger Type: Negative Edge Supplier Device Package: 5-TSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Number of Bits per Element: 15 |
auf Bestellung 5242 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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74AHC1G4210GWH |
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Nexperia USA Inc. |
Description: 74AHC1G4210GW/SOT353/UMT5 Number of Bits per Element: 10 Number of Elements: 1 Direction: Up Logic Type: Divide-by-2 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Trigger Type: Negative Edge |
auf Bestellung 7152 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 1676 Stücke - Preis und Lieferfrist anzeigen
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PTVS12VP1UP,115 |
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Nexperia USA Inc. |
Description: TVS DIODE 12VWM 19.9VC CFP5 Type: Zener Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 19.9V Voltage - Breakdown (Min): 13.3V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 12V Current - Peak Pulse (10/1000µs): 30.2A Applications: Automotive Operating Temperature: -55°C ~ 150°C (TA) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 184 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TVS DIODE 12VWM 19.9VC CFP5 Power Line Protection: No Part Status: Active Power - Peak Pulse: 600W Voltage - Breakdown (Min): 13.3V Unidirectional Channels: 1 Supplier Device Package: SOD-128/CFP5 Voltage - Reverse Standoff (Typ): 12V Current - Peak Pulse (10/1000µs): 30.2A Applications: Automotive Package / Case: SOD-128 Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount Voltage - Clamping (Max) @ Ipp: 19.9V |
auf Bestellung 424 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 184 Stücke - Preis und Lieferfrist anzeigen
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BAS16,215 |
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Nexperia USA Inc. |
Description: DIODE GEN PURP 100V 215MA SOT23 Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Current - Average Rectified (Io): 215mA (DC) Voltage - DC Reverse (Vr) (Max): 100V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Diode Type: Standard Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Current - Reverse Leakage @ Vr: 500nA @ 80V Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns |
auf Bestellung 143448 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 237657 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: DIODE GP 100V 215MA TO236AB Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Supplier Device Package: TO-236AB Current - Average Rectified (Io): 215mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz |
auf Bestellung 793751 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 237657 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: DIODE GP 100V 215MA TO236AB Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-236AB Current - Average Rectified (Io): 215mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns |
auf Bestellung 793751 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 237657 Stücke - Preis und Lieferfrist anzeigen
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BUK7K18-40EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 24.2A LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 38W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24.2A Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
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PHB18NQ10T,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 18A D2PAK Power Dissipation (Max): 79W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 100V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1966 Stücke - Preis und Lieferfrist anzeigen
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BUK7K89-100EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 13A LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V Current - Continuous Drain (Id) @ 25°C: 13A Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: LFPAK56D |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 631 Stücke - Preis und Lieferfrist anzeigen
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BUK7214-75B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 70A DPAK Drain to Source Voltage (Vdss): 75V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: BUK7214 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 158W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2612pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
auf Bestellung 2500 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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PSMN165-200K,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 2.9A SOT96-1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK9212-55B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A DPAK Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 3519pF @ 25V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 185°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BUK9675-100A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 23A D2PAK Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 800 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 23A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1376 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PSMN005-30K,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 20A 8SO Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Power Dissipation (Max): 3.5W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5150 Stücke - Preis und Lieferfrist anzeigen
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PSMN006-20K,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 32A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
PESD3V3U1UA,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM SOD323
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 4.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 2.6pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 296240 Stücke Description: TVS DIODE 3.3VWM SOD323
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 4.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 2.6pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 390072 Stücke - Preis und Lieferfrist anzeigen
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IP4223CZ6,125 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Steering (Rail to Rail)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Steering (Rail to Rail)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
auf Bestellung 1417571 Stücke - Preis und Lieferfrist anzeigen
PESD15VL2BT,215 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 15V 44V SOT23
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 17.1V
Voltage - Reverse Standoff (Typ): 15V (Max)
Bidirectional Channels: 2
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: PESD*L2B
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 16pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
auf Bestellung 85588 Stücke Description: TVS DIODE 15V 44V SOT23
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 17.1V
Voltage - Reverse Standoff (Typ): 15V (Max)
Bidirectional Channels: 2
Type: Zener
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: PESD*L2B
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 16pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Current - Peak Pulse (10/1000µs): 5A (8/20µs)

Lieferzeit 21-28 Tag (e)
auf Bestellung 18410 Stücke - Preis und Lieferfrist anzeigen
2N7002P,235 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 360MA TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
NX7002AK,215 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
auf Bestellung 307496 Stücke Description: MOSFET N-CH 60V 190MA TO236AB
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active

Lieferzeit 21-28 Tag (e)
auf Bestellung 538320 Stücke - Preis und Lieferfrist anzeigen
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NX7002AK,215 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Part Status: Active
Supplier Device Package: TO-236AB
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 307899 Stücke Description: MOSFET N-CH 60V 190MA TO236AB
Part Status: Active
Supplier Device Package: TO-236AB
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 537917 Stücke - Preis und Lieferfrist anzeigen
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BSH121,135 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 300MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 300MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Tc)
auf Bestellung 25581 Stücke - Preis und Lieferfrist anzeigen
BSH105,235 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.05A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 570mV @ 1mA
Power Dissipation (Max): 417mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke Description: MOSFET N-CH 20V 1.05A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 570mV @ 1mA
Power Dissipation (Max): 417mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 11781 Stücke - Preis und Lieferfrist anzeigen
PMT21EN,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 7.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V
PMPB20ENZ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A 6DFN
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN2020MD-6
Package / Case: 6-UDFN Exposed Pad
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 7.2A 6DFN
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN2020MD-6
Package / Case: 6-UDFN Exposed Pad
PSMN8R5-100ESQ |
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_SOT226%20Pkg.jpg)
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 100A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
auf Bestellung 61283 Stücke - Preis und Lieferfrist anzeigen
PMXB40UNEZ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 3.2A DFN1010D-3
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
auf Bestellung 795 Stücke - Preis und Lieferfrist anzeigen
PMXB40UNEZ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 595 Stücke Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 200 Stücke - Preis und Lieferfrist anzeigen
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BSS192,135 |
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SOT89.jpg)
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 240V 200MA SOT89
Supplier Device Package: SOT-89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Base Part Number: BSS192
Package / Case: TO-243AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 240V 200MA SOT89
Supplier Device Package: SOT-89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Base Part Number: BSS192
Package / Case: TO-243AA
PHK04P02T,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 16V 4.66A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 16V 4.66A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 600mV @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V
auf Bestellung 193508 Stücke - Preis und Lieferfrist anzeigen
BUK92150-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 11A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 11A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 11108 Stücke - Preis und Lieferfrist anzeigen
BUK92150-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 11A DPAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 338pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 125mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
auf Bestellung 11108 Stücke Description: MOSFET N-CH 55V 11A DPAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 338pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 125mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)

Lieferzeit 21-28 Tag (e)
BUK9Y59-60E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 16.7A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Technology: MOSFET (Metal Oxide)
Base Part Number: BUK9Y59
Package / Case: SC-100, SOT-669
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 16.7A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Technology: MOSFET (Metal Oxide)
Base Part Number: BUK9Y59
Package / Case: SC-100, SOT-669
auf Bestellung 23642 Stücke - Preis und Lieferfrist anzeigen
BUK7Y153-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
auf Bestellung 3616 Stücke - Preis und Lieferfrist anzeigen
PHK13N03LT,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 13.8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 13.8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
auf Bestellung 25764 Stücke - Preis und Lieferfrist anzeigen
PHD20N06T,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 18A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 18A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
BAV23,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 200V 225MA SOT143
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Base Part Number: BAV23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-143B
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
auf Bestellung 105720 Stücke Description: DIODE ARRAY GP 200V 225MA SOT143
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Base Part Number: BAV23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-143B
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns

Lieferzeit 21-28 Tag (e)
auf Bestellung 1966684 Stücke - Preis und Lieferfrist anzeigen
BUK9277-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 18A DPAK
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 18A DPAK
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
PHK12NQ03LT,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 11.8A SOT96
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 11.8A SOT96
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 36500 Stücke - Preis und Lieferfrist anzeigen
PHD97NQ03LT,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 75A DPAK
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
BUK9Y113-100E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 12A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 1282 Stücke - Preis und Lieferfrist anzeigen
BUK9Y72-80E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 15A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 15A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 2475 Stücke - Preis und Lieferfrist anzeigen
BUK7Y72-80EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 16A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 16A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
BUK9880-55,135 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7.5A SOT223
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 7.5A SOT223
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
PSMN3R5-30YL,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2458 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2458 pF @ 12 V
auf Bestellung 4240 Stücke - Preis und Lieferfrist anzeigen
BUK9245-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 28A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 28A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 8463 Stücke - Preis und Lieferfrist anzeigen
1PS79SB10,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOD523
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 200MA SOD523
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
auf Bestellung 14426 Stücke - Preis und Lieferfrist anzeigen
74LVC2G14GM-Q100X |
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Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 2CH 2-IN 6XSON
Features: Schmitt Trigger
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 4 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
Logic Level - Low: 1.1V ~ 2.5V
Logic Level - High: 1.7V ~ 3.8V
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC INVERT SCHMITT 2CH 2-IN 6XSON
Features: Schmitt Trigger
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 4 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
Logic Level - Low: 1.1V ~ 2.5V
Logic Level - High: 1.7V ~ 3.8V
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
auf Bestellung 9945 Stücke - Preis und Lieferfrist anzeigen
PESD5V0X1UAB,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9VC SOD523
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5VWM 9VC SOD523
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
auf Bestellung 1588 Stücke - Preis und Lieferfrist anzeigen
PESD5V0X1UAB,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9VC SOD523
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
auf Bestellung 1588 Stücke Description: TVS DIODE 5VWM 9VC SOD523
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)

Lieferzeit 21-28 Tag (e)
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PESD1USB3SZ |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 5WLCSP
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 5-WLCSP (0.77x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.5VWM 5WLCSP
Mounting Type: Surface Mount
Package / Case: 5-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 5-WLCSP (0.77x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
auf Bestellung 501 Stücke - Preis und Lieferfrist anzeigen
BUK9575-55A,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 20A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 20A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
PSMN038-100YLX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 94.9W (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 30A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 94.9W (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1693 Stücke - Preis und Lieferfrist anzeigen
BUK9230-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 38A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 27mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 38A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 27mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
BUK7237-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 32.3A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
Power Dissipation (Max): 77W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 7500 Stücke Description: MOSFET N-CH 55V 32.3A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
Power Dissipation (Max): 77W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Lieferzeit 21-28 Tag (e)
auf Bestellung 18058 Stücke - Preis und Lieferfrist anzeigen
BUK7237-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 32.3A DPAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
Power Dissipation (Max): 77W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 9029 Stücke Description: MOSFET N-CH 55V 32.3A DPAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
Power Dissipation (Max): 77W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Lieferzeit 21-28 Tag (e)
auf Bestellung 16529 Stücke - Preis und Lieferfrist anzeigen
PHK18NQ03LT,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 20.3A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 20.3A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
BUK9840-55,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5A SOT223
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 5A SOT223
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
BUK7230-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 38A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1152pF @ 25V
Power Dissipation (Max): 88W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK7230
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 38A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1152pF @ 25V
Power Dissipation (Max): 88W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK7230
auf Bestellung 6270 Stücke - Preis und Lieferfrist anzeigen
PH7030AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 76A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 12 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 76A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 12 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 9120 Stücke - Preis und Lieferfrist anzeigen
PH6030AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 79A LFPAK
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 12V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 79A LFPAK
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 12V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
PHD38N02LT,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 44.7A DPAK
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PHD38N02
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 57.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 44.7A DPAK
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PHD38N02
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 57.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 5V
PH4030AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
BUK96180-100A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 11A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V
Vgs (Max): ±15V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 11A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V
Vgs (Max): ±15V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 12222 Stücke - Preis und Lieferfrist anzeigen
PMK35EP,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 14.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.9W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 14.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.9W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±25V
auf Bestellung 4940 Stücke - Preis und Lieferfrist anzeigen
PMK35EP,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 14.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.9W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 2470 Stücke Description: MOSFET P-CH 30V 14.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.9W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drain to Source Voltage (Vdss): 30V

Lieferzeit 21-28 Tag (e)
auf Bestellung 2470 Stücke - Preis und Lieferfrist anzeigen
PMK35EP,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 14.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2470 Stücke Description: MOSFET P-CH 30V 14.9A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)

Lieferzeit 21-28 Tag (e)
auf Bestellung 2470 Stücke - Preis und Lieferfrist anzeigen
BUK7K52-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 15.4A LFPAK
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15.4A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 15.4A LFPAK
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15.4A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 339 Stücke - Preis und Lieferfrist anzeigen
PSMN1R7-30YL,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 109W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 109W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
auf Bestellung 1760 Stücke - Preis und Lieferfrist anzeigen
PH5030AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 91A LFPAK
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 91A LFPAK
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V
BUK9K134-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 8.5A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 498 Stücke - Preis und Lieferfrist anzeigen
BUK7K134-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 9.8A LFPAK56D
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Rds On (Max) @ Id, Vgs: 121mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 9.8A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 9.8A LFPAK56D
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Rds On (Max) @ Id, Vgs: 121mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 9.8A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
auf Bestellung 469 Stücke - Preis und Lieferfrist anzeigen
BUK9K25-40EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 18.2A 56LFPAK
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Part Status: Active
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 18.2A 56LFPAK
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Part Status: Active
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
PHD71NQ03LT,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 75A DPAK
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 64210 Stücke - Preis und Lieferfrist anzeigen
PSMN038-100K,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tj)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
BUK7219-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2108pF @ 25V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: BUK7219
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 55A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2108pF @ 25V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: BUK7219
auf Bestellung 1549 Stücke - Preis und Lieferfrist anzeigen
BUK9215-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2916pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2916pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
auf Bestellung 14588 Stücke - Preis und Lieferfrist anzeigen
BUK9215-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2916pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
auf Bestellung 2198 Stücke Description: MOSFET N-CH 55V 55A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2916pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.

Lieferzeit 21-28 Tag (e)
auf Bestellung 12390 Stücke - Preis und Lieferfrist anzeigen
BUK9219-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK9219
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK9219
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
auf Bestellung 13640 Stücke - Preis und Lieferfrist anzeigen
BUK9226-75A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
BUK7620-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A D2PAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 54A D2PAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
PSMN085-150K,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 3.5A SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 3.5A SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
auf Bestellung 15120 Stücke - Preis und Lieferfrist anzeigen
74AHC1G4208GW-Q10H |
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Hersteller: Nexperia USA Inc.
Description: IC DIVIDER OSCILLATOR 5TSSOP
Number of Bits per Element: 8
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 5-TSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Divide-by-2
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC DIVIDER OSCILLATOR 5TSSOP
Number of Bits per Element: 8
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 5-TSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Divide-by-2
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
74AHC1G4215GW-Q10H |
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Hersteller: Nexperia USA Inc.
Description: IC DIVIDER OSCILLATOR 5TSSOP
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
Logic Type: Divide-by-2
Direction: Up
Number of Elements: 1
Number of Bits per Element: 15
Trigger Type: Negative Edge
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP
Base Part Number: 74AHC1G4215
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC DIVIDER OSCILLATOR 5TSSOP
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
Logic Type: Divide-by-2
Direction: Up
Number of Elements: 1
Number of Bits per Element: 15
Trigger Type: Negative Edge
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP
Base Part Number: 74AHC1G4215
74AHC1G4208GWH |
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Hersteller: Nexperia USA Inc.
Description: 8-STAGE DIVIDER AND OSCILLATOR
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Logic Type: Divide-by-2
Direction: Up
Number of Elements: 1
Number of Bits per Element: 8
Trigger Type: Negative Edge
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP
auf Bestellung 5996 Stücke Description: 8-STAGE DIVIDER AND OSCILLATOR
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Logic Type: Divide-by-2
Direction: Up
Number of Elements: 1
Number of Bits per Element: 8
Trigger Type: Negative Edge
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP

Lieferzeit 21-28 Tag (e)
auf Bestellung 1630 Stücke - Preis und Lieferfrist anzeigen
74AHC1G4212GW-Q10H |
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Hersteller: Nexperia USA Inc.
Description: 12-STAGE DIVIDER AND OSCILLATOR
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 12
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5995 Stücke Description: 12-STAGE DIVIDER AND OSCILLATOR
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 12
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)

Lieferzeit 21-28 Tag (e)
74AHC1G4214GW-Q10H |
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Hersteller: Nexperia USA Inc.
Description: 14-STAGE DIVIDER AND OSCILLATOR
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 14
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
auf Bestellung 6000 Stücke Description: 14-STAGE DIVIDER AND OSCILLATOR
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 14
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2

Lieferzeit 21-28 Tag (e)
74AHC1G4214GWH |
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Hersteller: Nexperia USA Inc.
Description: 74AHC1G4214GW/SOT353/UMT5
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 14
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
auf Bestellung 5830 Stücke Description: 74AHC1G4214GW/SOT353/UMT5
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 14
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active

Lieferzeit 21-28 Tag (e)
auf Bestellung 8761 Stücke - Preis und Lieferfrist anzeigen
74AHC1G4214GWH |
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Hersteller: Nexperia USA Inc.
Description: 74AHC1G4214GW/SOT353/UMT5
Number of Bits per Element: 14
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 5-TSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Divide-by-2
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: 74AHC1G4214GW/SOT353/UMT5
Number of Bits per Element: 14
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 5-TSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Divide-by-2
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 11591 Stücke - Preis und Lieferfrist anzeigen
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PZU7.5B,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 310 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 7.5V 310MW SOD323F
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 310 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
74AHC1G4212GWH |
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Hersteller: Nexperia USA Inc.
Description: 74AHC1G4212GW/SOT353/UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-2
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 5-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Number of Bits per Element: 12
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 74AHC1G4212GW/SOT353/UMT5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-2
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 5-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Number of Bits per Element: 12
auf Bestellung 12338 Stücke - Preis und Lieferfrist anzeigen
74AHC1G4215GWH |
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Hersteller: Nexperia USA Inc.
Description: 15-STAGE DIVIDER AND OSCILLATOR
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 15
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
auf Bestellung 5952 Stücke Description: 15-STAGE DIVIDER AND OSCILLATOR
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
Number of Bits per Element: 15
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353

Lieferzeit 21-28 Tag (e)
auf Bestellung 8242 Stücke - Preis und Lieferfrist anzeigen
74AHC1G4215GWH |
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Hersteller: Nexperia USA Inc.
Description: 15-STAGE DIVIDER AND OSCILLATOR
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-2
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 5-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Number of Bits per Element: 15
auf Bestellung 5242 Stücke Description: 15-STAGE DIVIDER AND OSCILLATOR
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-2
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 5-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Number of Bits per Element: 15

Lieferzeit 21-28 Tag (e)
auf Bestellung 8952 Stücke - Preis und Lieferfrist anzeigen
74AHC1G4210GWH |
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Hersteller: Nexperia USA Inc.
Description: 74AHC1G4210GW/SOT353/UMT5
Number of Bits per Element: 10
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge
auf Bestellung 7152 Stücke Description: 74AHC1G4210GW/SOT353/UMT5
Number of Bits per Element: 10
Number of Elements: 1
Direction: Up
Logic Type: Divide-by-2
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Trigger Type: Negative Edge

Lieferzeit 21-28 Tag (e)
auf Bestellung 1676 Stücke - Preis und Lieferfrist anzeigen
PTVS12VP1UP,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC CFP5
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 30.2A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 12VWM 19.9VC CFP5
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 30.2A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
auf Bestellung 608 Stücke - Preis und Lieferfrist anzeigen
PTVS12VP1UP,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC CFP5
Power Line Protection: No
Part Status: Active
Power - Peak Pulse: 600W
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 30.2A
Applications: Automotive
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Voltage - Clamping (Max) @ Ipp: 19.9V
auf Bestellung 424 Stücke Description: TVS DIODE 12VWM 19.9VC CFP5
Power Line Protection: No
Part Status: Active
Power - Peak Pulse: 600W
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-128/CFP5
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 30.2A
Applications: Automotive
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Voltage - Clamping (Max) @ Ipp: 19.9V

Lieferzeit 21-28 Tag (e)
auf Bestellung 184 Stücke - Preis und Lieferfrist anzeigen
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BAS16,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 100V 215MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Current - Average Rectified (Io): 215mA (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Diode Type: Standard
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Current - Reverse Leakage @ Vr: 500nA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
auf Bestellung 143448 Stücke Description: DIODE GEN PURP 100V 215MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Current - Average Rectified (Io): 215mA (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Diode Type: Standard
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Current - Reverse Leakage @ Vr: 500nA @ 80V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns

Lieferzeit 21-28 Tag (e)
auf Bestellung 1825159 Stücke - Preis und Lieferfrist anzeigen
BAS16,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 215MA TO236AB
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 215mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
auf Bestellung 793751 Stücke Description: DIODE GP 100V 215MA TO236AB
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 215mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz

Lieferzeit 21-28 Tag (e)
auf Bestellung 1174856 Stücke - Preis und Lieferfrist anzeigen
|
BAS16,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 215MA TO236AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 215mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
auf Bestellung 793751 Stücke Description: DIODE GP 100V 215MA TO236AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 215mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns

Lieferzeit 21-28 Tag (e)
auf Bestellung 1174856 Stücke - Preis und Lieferfrist anzeigen
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BUK7K18-40EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 38W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 24.2A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 38W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
PHB18NQ10T,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 18A D2PAK
Power Dissipation (Max): 79W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 18A D2PAK
Power Dissipation (Max): 79W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 1966 Stücke - Preis und Lieferfrist anzeigen
BUK7K89-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 13A LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 13A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 13A LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 13A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
auf Bestellung 631 Stücke - Preis und Lieferfrist anzeigen
BUK7214-75B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 70A DPAK
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK7214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 158W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2612pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
auf Bestellung 2500 Stücke Description: MOSFET N-CH 75V 70A DPAK
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK7214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 158W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2612pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)

Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
PSMN165-200K,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 2.9A SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 2.9A SOT96-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
BUK9212-55B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3519pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3519pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9675-100A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 800 Stücke Description: MOSFET N-CH 100V 23A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Lieferzeit 21-28 Tag (e)
auf Bestellung 1376 Stücke - Preis und Lieferfrist anzeigen
BUK9675-100A,118 |
![]() |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1376 Stücke Description: MOSFET N-CH 100V 23A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
PSMN005-30K,518 |
![]() |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 20A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Power Dissipation (Max): 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 20A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Power Dissipation (Max): 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 1mA
auf Bestellung 5150 Stücke - Preis und Lieferfrist anzeigen
PSMN006-20K,518 |
![]() |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 32A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 32A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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