Die Produkte nexperia usa inc.
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Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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PSMN006-20K,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 20V 32A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9230-100B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 47A DPAK Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 3805pF @ 25V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 185°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3313 Stücke - Preis und Lieferfrist anzeigen
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BUK9217-75B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 64A DPAK Input Capacitance (Ciss) (Max) @ Vds: 4029 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 185°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3229 Stücke - Preis und Lieferfrist anzeigen
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PH2530AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs(th) (Max) @ Id: 2.15V @ 1mA Part Status: Last Time Buy Supplier Device Package: LFPAK56, Power-SO8 Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1471 Stücke - Preis und Lieferfrist anzeigen
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BUK9Y14-80E,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 62A LFPAK56 Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V Power Dissipation (Max): 147W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669 Base Part Number: BUK9Y14 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28810 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y14-80EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 65A LFPAK56 Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7Y8R7-60EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 87A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PHK31NQ03LT,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 30.4A 8SO Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4235pF @ 12V Power Dissipation (Max): 6.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 88953 Stücke - Preis und Lieferfrist anzeigen
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PHK5NQ15T,518 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 150V 5A SOT96-1 Packaging: Tape & Reel (TR) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9535-100A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 41A TO220AB Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3573 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9614-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 73A D2PAK Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10290 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y3R5-40E,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3583 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 88717 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y19-100EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V LFPAK56-SO8 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Power Dissipation (Max): 169W (Tc) Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9Y19-100E,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 56A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7491 Stücke - Preis und Lieferfrist anzeigen
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PSMN063-150D,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 150V 29A DPAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7618-55,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 57A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±16V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PHD9NQ20T,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 8.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9640-100A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 39A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7K45-100EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V Current - Continuous Drain (Id) @ 25°C: 21.4A Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PH1730AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669 Base Part Number: PH1730 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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PSMN1R8-40YLC,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16335 Stücke - Preis und Lieferfrist anzeigen
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PSMN1R2-25YL,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20933 Stücke - Preis und Lieferfrist anzeigen
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RB521CS30L,315 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 100MA SOD882 Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1006-2 Package / Case: SOD-882 Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 10V Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA Current - Average Rectified (Io): 100mA Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 50944 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 124452 Stücke - Preis und Lieferfrist anzeigen
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BUK9840-55,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 5A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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NZX33A,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 33V 500MW ALF2 Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 120 Ohms Voltage - Zener (Nom) (Vz): 33 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) |
auf Bestellung 9361 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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PESD3V3L5UY,115 |
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Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 12VC 6TSSOP Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 25W Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 5.3V Unidirectional Channels: 5 Supplier Device Package: 6-TSSOP Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 22pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TA) Type: Zener Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount |
auf Bestellung 87000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 33647 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 12VC 6TSSOP Voltage - Breakdown (Min): 5.3V Unidirectional Channels: 5 Supplier Device Package: 6-TSSOP Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 22pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TA) Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Power - Peak Pulse: 25W Voltage - Clamping (Max) @ Ipp: 12V |
auf Bestellung 87331 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 33647 Stücke - Preis und Lieferfrist anzeigen
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BUK9609-40B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 800 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3277 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 925 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3277 Stücke - Preis und Lieferfrist anzeigen
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BUK7K13-60EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 40A LFPAK56D Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) Power - Max: 64W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9K13-60EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 64W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9K6R8-40EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A 56LFPAK FET Type: 2 N-Channel (Dual) Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 40V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN7R8-120PSQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 120V 70A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3842 Stücke - Preis und Lieferfrist anzeigen
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BUK653R3-30C,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A TO-220AB Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 204W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7K32-100EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 29A LFPAK56D FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V Current - Continuous Drain (Id) @ 25°C: 29A Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7K12-60EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 40A LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 68W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 617pF @ 25V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 252 Stücke - Preis und Lieferfrist anzeigen
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BUK9K12-60EX |
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Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 35A 56LFPAK Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V Current - Continuous Drain (Id) @ 25°C: 35A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1732 Stücke - Preis und Lieferfrist anzeigen
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BUK762R9-40E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAK Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 234W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9862 Stücke - Preis und Lieferfrist anzeigen
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PMLL4148L,115 |
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Nexperia USA Inc. |
Description: DIODE GEN PURP 75V 200MA LLDS Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 25nA @ 20V Reverse Recovery Time (trr): 4ns Base Part Number: LL4148 Operating Temperature - Junction: 200°C (Max) Supplier Device Package: LLDS; MiniMelf Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 200mA (DC) Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 325615 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2798540 Stücke - Preis und Lieferfrist anzeigen
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PSMN005-75B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
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PMLL4148L,135 |
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Nexperia USA Inc. |
Description: DIODE GEN PURP 75V 200MA LLDS Operating Temperature - Junction: 200°C (Max) Supplier Device Package: LLDS; MiniMelf Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 0V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: LL4148 |
auf Bestellung 12786 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 227641 Stücke - Preis und Lieferfrist anzeigen
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BAS32L,135 |
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Nexperia USA Inc. |
Description: DIODE GEN PURP 75V 200MA SOD80 Base Part Number: BAS32 Operating Temperature - Junction: 200°C (Max) Supplier Device Package: LLDS; MiniMelf Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 75V Reverse Recovery Time (trr): 4ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 200mA (DC) Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active |
auf Bestellung 93311 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 798881 Stücke - Preis und Lieferfrist anzeigen
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BUK954R4-40B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220AB Packaging: Tube Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 7124pF @ 25V Power Dissipation (Max): 254W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7606-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
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BUK9604-40A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PESD5V0L5UY,115 |
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Nexperia USA Inc. |
Description: TVS DIODE 5VWM 12VC 6TSSOP Part Status: Active Power Line Protection: No Power - Peak Pulse: 25W Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TA) Type: Zener Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 5 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP Packaging: Tape & Reel (TR) Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 16pF @ 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23916 Stücke - Preis und Lieferfrist anzeigen
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PH1330AL,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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BUK9E06-55B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 258W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN1R9-40PLQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 150A TO220AB Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V |
auf Bestellung 4990 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK961R6-40E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK964R2-55B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 10220pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V Base Part Number: BUK964 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN012-80PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 74A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20322 Stücke - Preis und Lieferfrist anzeigen
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BUK761R6-40E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2656 Stücke - Preis und Lieferfrist anzeigen
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BUK9E04-40A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7905-40AI,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220-5 Vgs (Max): ±20V Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-5 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 272W (Tc) FET Feature: Current Sensing Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Drain to Source Voltage (Vdss): 40 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 852 Stücke - Preis und Lieferfrist anzeigen
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BUK964R2-80E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
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BUK7606-75B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 75V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Manufacturer: Nexperia USA Inc. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Drain to Source Voltage (Vdss): 75V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Mounting Type: Surface Mount |
auf Bestellung 3185 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PSMN7R6-100BSEJ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: PSMN7R6 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 296W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 1600 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Manufacturer: Nexperia USA Inc. Base Part Number: PSMN7R6 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 296W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 1962 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V D2PAK Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V Power Dissipation (Max): 296W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 3640 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK7107-55AIE,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
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BUK7107-40ATC,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9107-55ATE,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A SOT426 FET Feature: Temperature Sensing Diode Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V Vgs (Max): ±15V Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 108nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Power Dissipation (Max): 272W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1958 Stücke - Preis und Lieferfrist anzeigen
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BUK7907-55AIE,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A TO220-5 Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7105-40ATE,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A SOT426 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7905-40ATE,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220-5 Supplier Device Package: TO-220-5 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 272W (Tc) FET Feature: Temperature Sensing Diode Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Packaging: Tube Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7C08-55AITE,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4V @ 1mA Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Power Dissipation (Max): 272W (Tc) FET Feature: Current Sensing Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN3R8-100BS,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PCMF1USB3SZ |
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Nexperia USA Inc. |
Description: COMMON MODE CHOKE 2LN SMD ESD Operating Temperature: -40°C ~ 85°C DC Resistance (DCR) (Max): 3Ohm (Typ) Number of Lines: 2 Filter Type: Signal Line Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 5-UFBGA, WLCSP Height (Max): 0.024" (0.60mm) Size / Dimension: 0.046" L x 0.030" W (1.17mm x 0.77mm) Mounting Type: Surface Mount Features: ESD |
auf Bestellung 19439 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3117 Stücke - Preis und Lieferfrist anzeigen
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BFS20,215 |
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Nexperia USA Inc. |
Description: TRANS NPN 20V 25MA TO236AB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 25 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 450MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) |
auf Bestellung 9624 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 19831 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TRANS NPN 20V 25MA TO236AB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 25 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 450MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) |
auf Bestellung 9000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 19831 Stücke - Preis und Lieferfrist anzeigen
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PESD2USB3SZ |
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Nexperia USA Inc. |
Description: TVS DIODE 5.5V 10WLCSP Mounting Type: Surface Mount Package / Case: 10-UFBGA, WLCSP Packaging: Cut Tape (CT) Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 4 Supplier Device Package: 10-WLCSP (1.57x1.17) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 7A (8/20µs) Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Type: Zener |
auf Bestellung 8383 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2670 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TVS DIODE 5.5V 10WLCSP Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 4 Supplier Device Package: 10-WLCSP (1.57x1.17) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 7A (8/20µs) Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 10-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 4500 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2670 Stücke - Preis und Lieferfrist anzeigen
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BUK7535-100A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 41A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 2535pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 149W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7E4R6-60E,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A I2PAK Supplier Device Package: I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 234W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Nexperia USA Inc. Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
auf Bestellung 484 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2920 Stücke - Preis und Lieferfrist anzeigen
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PRTR5V0U2AX/S911,2 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM SOT143B Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: Automotive Capacitance @ Frequency: 1.8pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-143B Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: Yes Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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IP4365CX11/P,135 |
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Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 11WLCSP Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Zener Unidirectional Channels: 5 Voltage - Reverse Standoff (Typ): 5.5V Voltage - Breakdown (Min): 6V Power Line Protection: Yes Applications: Multimedia Card Interface Capacitance @ Frequency: 10pF @ 1MHz Operating Temperature: -35°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 11-UFBGA, WLCSP Supplier Device Package: 11-WLCSP (1.56x1.16) Base Part Number: IP4365 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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IP4283CZ10-TT,118 |
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Nexperia USA Inc. |
Description: TVS DIODE 5.5V 9.5V 10TSSOP Current - Peak Pulse (10/1000µs): 3.8A (8/20µs) Voltage - Clamping (Max) @ Ipp: 9.5V (Typ) Voltage - Breakdown (Min): 6V Voltage - Reverse Standoff (Typ): 5.5V Unidirectional Channels: 4 Type: Steering (Rail to Rail) Part Status: Obsolete Packaging: Tape & Reel (TR) Power Line Protection: Yes Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-TSSOP Base Part Number: IP4283 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZX84-C12,235 |
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Nexperia USA Inc. |
Description: DIODE ZENER 12V 250MW SOT23 Base Part Number: BZX84C12 Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Current - Reverse Leakage @ Vr: 100nA @ 8V Impedance (Max) (Zzt): 25 Ohms Power - Max: 250mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 12V |
auf Bestellung 8175 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: DIODE ZENER 12V 250MW TO236AB Current - Reverse Leakage @ Vr: 100 nA @ 8 V Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Part Status: Active Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 8097 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IP4340CX15/P,135 |
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Nexperia USA Inc. |
Description: TVS DIODE 15WLCSP Supplier Device Package: 15-WLCSP (1.56x1.56) Package / Case: 15-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C (TA) Capacitance @ Frequency: 11pF @ 1MHz Applications: Multimedia Card Interface Voltage - Breakdown (Min): 6V Bidirectional Channels: 6 Type: Zener Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: IP4340 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 117000 Stücke - Preis und Lieferfrist anzeigen
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PBLS2003D,115 |
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Nexperia USA Inc. |
Description: TRANS NPN PREBIAS/PNP 0.6W 6TSOP Voltage - Collector Emitter Breakdown (Max): 50V, 20V Current - Collector (Ic) (Max): 100mA, 1A Transistor Type: 1 NPN Pre-Biased, 1 PNP Part Status: Discontinued at Digi-Key Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: PBLS2003 Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Power - Max: 600mW Frequency - Transition: 185MHz Current - Collector Cutoff (Max): 1µA, 100nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1002 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y3R0-40HX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A LFPAK56 Package / Case: SC-100, SOT-669 FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 3.6V @ 1mA Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 172W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 5449pF @ 25V Vgs (Max): +20V, -10V Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Supplier Device Package: LFPAK56, Power-SO8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PDZ5.6BGWJ |
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Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 365MW SOD123 Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±2.23% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 365 mW Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30084 Stücke - Preis und Lieferfrist anzeigen
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PQMB11Z |
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Nexperia USA Inc. |
Description: TRANS PNP/PNP RET 6DFN Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 230mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4975 Stücke - Preis und Lieferfrist anzeigen
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BCW33,215 |
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Nexperia USA Inc. |
Description: TRANS NPN 32V 0.1A SOT23 Frequency - Transition: 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Base Part Number: BCW33 Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Collector Emitter Breakdown (Max): 32V Current - Collector (Ic) (Max): 100mA Transistor Type: NPN Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 2861 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 97941 Stücke - Preis und Lieferfrist anzeigen
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PBLS6021D,115 |
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Nexperia USA Inc. |
Description: NEXPERIA PBLS6021D - SMALL SIGNA Part Status: Active Packaging: Bulk |
auf Bestellung 45000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 177000 Stücke - Preis und Lieferfrist anzeigen
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BZX84W-B33F |
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Nexperia USA Inc. |
Description: DIODE ZENER 33V 275MW SOT323 Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 275 mW Part Status: Active Supplier Device Package: SOT-323 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 33 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9900 Stücke - Preis und Lieferfrist anzeigen
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74AHC1G09GV-Q100H |
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Nexperia USA Inc. |
Description: IC GATE AND OD 1CH 2-INP 5TSOP Base Part Number: 74AHC1G09 Package / Case: SC-74A, SOT-753 Supplier Device Package: SC-74A Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Logic Level - High: 1.5V ~ 3.85V Logic Level - Low: 0.5V ~ 1.65V Current - Output High, Low: -, 8mA Current - Quiescent (Max): 1µA Voltage - Supply: 2V ~ 5.5V Features: Open Drain Number of Inputs: 2 Number of Circuits: 1 Logic Type: AND Gate Part Status: Active |
auf Bestellung 3000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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74AHC1G09GW-Q100H |
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Nexperia USA Inc. |
Description: IC GATE AND OD 1CH 2-INP 5TSSOP Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Logic Level - Low: 0.5V ~ 1.65V Logic Level - High: 1.5V ~ 3.85V Supplier Device Package: 5-TSSOP Number of Inputs: 2 Current - Output High, Low: -, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Open Drain Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3095 Stücke - Preis und Lieferfrist anzeigen
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PSMN006-20K,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 32A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 32A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
BUK9230-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 47A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3805pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 47A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3805pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 3313 Stücke - Preis und Lieferfrist anzeigen
BUK9217-75B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 64A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4029 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 64A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4029 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 3229 Stücke - Preis und Lieferfrist anzeigen
PH2530AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Part Status: Last Time Buy
Supplier Device Package: LFPAK56, Power-SO8
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Part Status: Last Time Buy
Supplier Device Package: LFPAK56, Power-SO8
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1471 Stücke - Preis und Lieferfrist anzeigen
BUK9Y14-80E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 62A LFPAK56
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
Power Dissipation (Max): 147W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
Base Part Number: BUK9Y14
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 62A LFPAK56
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
Power Dissipation (Max): 147W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
Base Part Number: BUK9Y14
auf Bestellung 28810 Stücke - Preis und Lieferfrist anzeigen
BUK7Y14-80EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 65A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 65A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3155 pF @ 25 V
BUK7Y8R7-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 87A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 87A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 25 V
PHK31NQ03LT,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30.4A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4235pF @ 12V
Power Dissipation (Max): 6.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 30.4A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4235pF @ 12V
Power Dissipation (Max): 6.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 88953 Stücke - Preis und Lieferfrist anzeigen
PHK5NQ15T,518 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 5A SOT96-1
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Power Dissipation (Max): 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 5A SOT96-1
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Power Dissipation (Max): 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
BUK9535-100A,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3573 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 41A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3573 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
BUK9614-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 73A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 73A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10290 Stücke - Preis und Lieferfrist anzeigen
BUK7Y3R5-40E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3583 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 100A LFPAK56
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3583 pF @ 25 V
auf Bestellung 88717 Stücke - Preis und Lieferfrist anzeigen
BUK7Y19-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V LFPAK56-SO8
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
BUK9Y19-100E,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 56A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
auf Bestellung 7491 Stücke - Preis und Lieferfrist anzeigen
PSMN063-150D,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 29A DPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 29A DPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7618-55,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 57A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 57A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHD9NQ20T,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
BUK9640-100A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 39A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 39A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
BUK7K45-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 21.4A LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
PH1730AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
Base Part Number: PH1730
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
Base Part Number: PH1730
PSMN1R8-40YLC,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 100A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
auf Bestellung 16335 Stücke - Preis und Lieferfrist anzeigen
PSMN1R2-25YL,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 20933 Stücke - Preis und Lieferfrist anzeigen
RB521CS30L,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 100MA SOD882
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006-2
Package / Case: SOD-882
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 10V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Current - Average Rectified (Io): 100mA
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 50944 Stücke Description: DIODE SCHOTTKY 30V 100MA SOD882
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006-2
Package / Case: SOD-882
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 10V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Current - Average Rectified (Io): 100mA
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)

Lieferzeit 21-28 Tag (e)
auf Bestellung 124452 Stücke - Preis und Lieferfrist anzeigen
BUK9840-55,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
NZX33A,133 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 500MW ALF2
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 9361 Stücke Description: DIODE ZENER 33V 500MW ALF2
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 120 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
PESD3V3L5UY,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 12VC 6TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 5
Supplier Device Package: 6-TSSOP
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 22pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
auf Bestellung 87000 Stücke Description: TVS DIODE 3.3VWM 12VC 6TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 5
Supplier Device Package: 6-TSSOP
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 22pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount

Lieferzeit 21-28 Tag (e)
auf Bestellung 120978 Stücke - Preis und Lieferfrist anzeigen
|
PESD3V3L5UY,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 12VC 6TSSOP
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 5
Supplier Device Package: 6-TSSOP
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 22pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 12V
auf Bestellung 87331 Stücke Description: TVS DIODE 3.3VWM 12VC 6TSSOP
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 5
Supplier Device Package: 6-TSSOP
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 22pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 12V

Lieferzeit 21-28 Tag (e)
auf Bestellung 120647 Stücke - Preis und Lieferfrist anzeigen
|
BUK9609-40B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 4202 Stücke - Preis und Lieferfrist anzeigen
|
BUK9609-40B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 925 Stücke Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 4077 Stücke - Preis und Lieferfrist anzeigen
|
BUK7K13-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 40A LFPAK56D
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
BUK9K13-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 64W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 64W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
BUK9K6R8-40EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A 56LFPAK
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 40A 56LFPAK
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 40V
PSMN7R8-120PSQ |
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_SOT226%20Pkg.jpg)
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 120V 70A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 120V 70A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V
auf Bestellung 3842 Stücke - Preis und Lieferfrist anzeigen
BUK653R3-30C,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO-220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 204W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A TO-220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 204W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
BUK7K32-100EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 29A LFPAK56D
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 29A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 29A LFPAK56D
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 29A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
BUK7K12-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 68W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 617pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 68W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 617pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
auf Bestellung 252 Stücke - Preis und Lieferfrist anzeigen
BUK9K12-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 35A 56LFPAK
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 35A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 35A 56LFPAK
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 35A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 1732 Stücke - Preis und Lieferfrist anzeigen
BUK762R9-40E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 234W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 100A D2PAK
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 234W (Tc)
auf Bestellung 9862 Stücke - Preis und Lieferfrist anzeigen
PMLL4148L,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 200MA LLDS
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 25nA @ 20V
Reverse Recovery Time (trr): 4ns
Base Part Number: LL4148
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: LLDS; MiniMelf
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 325615 Stücke Description: DIODE GEN PURP 75V 200MA LLDS
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 25nA @ 20V
Reverse Recovery Time (trr): 4ns
Base Part Number: LL4148
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: LLDS; MiniMelf
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)

Lieferzeit 21-28 Tag (e)
auf Bestellung 2798540 Stücke - Preis und Lieferfrist anzeigen
PSMN005-75B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
PMLL4148L,135 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 200MA LLDS
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: LLDS; MiniMelf
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: LL4148
auf Bestellung 12786 Stücke Description: DIODE GEN PURP 75V 200MA LLDS
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: LLDS; MiniMelf
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: LL4148

Lieferzeit 21-28 Tag (e)
auf Bestellung 227641 Stücke - Preis und Lieferfrist anzeigen
BAS32L,135 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 200MA SOD80
Base Part Number: BAS32
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: LLDS; MiniMelf
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
auf Bestellung 93311 Stücke Description: DIODE GEN PURP 75V 200MA SOD80
Base Part Number: BAS32
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: LLDS; MiniMelf
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active

Lieferzeit 21-28 Tag (e)
auf Bestellung 798881 Stücke - Preis und Lieferfrist anzeigen
BUK954R4-40B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 7124pF @ 25V
Power Dissipation (Max): 254W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 7124pF @ 25V
Power Dissipation (Max): 254W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
BUK7606-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
BUK9604-40A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
PESD5V0L5UY,115 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12VC 6TSSOP
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 5
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 16pF @ 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5VWM 12VC 6TSSOP
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TA)
Type: Zener
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 5
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Packaging: Tape & Reel (TR)
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 16pF @ 1MHz
auf Bestellung 23916 Stücke - Preis und Lieferfrist anzeigen
PH1330AL,115 |

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
BUK9E06-55B,127 |
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_SOT226%20Pkg.jpg)
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 258W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 258W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
PSMN1R9-40PLQ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
auf Bestellung 4990 Stücke Description: MOSFET N-CH 40V 150A TO220AB
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V

Lieferzeit 21-28 Tag (e)
|
BUK961R6-40E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
BUK964R2-55B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10220pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Base Part Number: BUK964
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10220pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Base Part Number: BUK964
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
PSMN012-80PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 74A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
auf Bestellung 20322 Stücke - Preis und Lieferfrist anzeigen
BUK761R6-40E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2656 Stücke - Preis und Lieferfrist anzeigen
BUK9E04-40A,127 |
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_SOT226%20Pkg.jpg)
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
BUK7905-40AI,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220-5
Vgs (Max): ±20V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Current Sensing
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A TO220-5
Vgs (Max): ±20V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Current Sensing
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 852 Stücke - Preis und Lieferfrist anzeigen
BUK964R2-80E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
BUK7606-75B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Manufacturer: Nexperia USA Inc.
auf Bestellung 3185 Stücke - Preis und Lieferfrist anzeigen
BUK7606-75B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Mounting Type: Surface Mount
auf Bestellung 3185 Stücke Description: MOSFET N-CH 75V 75A D2PAK
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7446pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Mounting Type: Surface Mount

Lieferzeit 21-28 Tag (e)
PSMN7R6-100BSEJ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN7R6
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 296W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1600 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN7R6
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 296W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel

Lieferzeit 21-28 Tag (e)
auf Bestellung 5602 Stücke - Preis und Lieferfrist anzeigen
PSMN7R6-100BSEJ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN7R6
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 296W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1962 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN7R6
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 296W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 5240 Stücke - Preis und Lieferfrist anzeigen
PSMN7R6-100BSEJ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V D2PAK
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
Power Dissipation (Max): 296W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 3640 Stücke Description: MOSFET N-CH 100V D2PAK
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7110pF @ 50V
Power Dissipation (Max): 296W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Lieferzeit 21-28 Tag (e)
auf Bestellung 3562 Stücke - Preis und Lieferfrist anzeigen
BUK7107-55AIE,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-426
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-426
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
BUK7107-40ATC,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
BUK9107-55ATE,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A SOT426
FET Feature: Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V
Vgs (Max): ±15V
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 272W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A SOT426
FET Feature: Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V
Vgs (Max): ±15V
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 272W (Tc)
auf Bestellung 1958 Stücke - Preis und Lieferfrist anzeigen
BUK7907-55AIE,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
BUK7105-40ATE,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A SOT426
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-426
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A SOT426
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-426
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
BUK7905-40ATE,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220-5
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A TO220-5
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
BUK7C08-55AITE,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Power Dissipation (Max): 272W (Tc)
FET Feature: Current Sensing
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A D2PAK
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Power Dissipation (Max): 272W (Tc)
FET Feature: Current Sensing
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
PSMN3R8-100BS,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
PCMF1USB3SZ |
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Hersteller: Nexperia USA Inc.
Description: COMMON MODE CHOKE 2LN SMD ESD
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR) (Max): 3Ohm (Typ)
Number of Lines: 2
Filter Type: Signal Line
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 5-UFBGA, WLCSP
Height (Max): 0.024" (0.60mm)
Size / Dimension: 0.046" L x 0.030" W (1.17mm x 0.77mm)
Mounting Type: Surface Mount
Features: ESD
auf Bestellung 19439 Stücke Description: COMMON MODE CHOKE 2LN SMD ESD
Operating Temperature: -40°C ~ 85°C
DC Resistance (DCR) (Max): 3Ohm (Typ)
Number of Lines: 2
Filter Type: Signal Line
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 5-UFBGA, WLCSP
Height (Max): 0.024" (0.60mm)
Size / Dimension: 0.046" L x 0.030" W (1.17mm x 0.77mm)
Mounting Type: Surface Mount
Features: ESD

Lieferzeit 21-28 Tag (e)
auf Bestellung 3117 Stücke - Preis und Lieferfrist anzeigen
BFS20,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 25MA TO236AB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 9624 Stücke Description: TRANS NPN 20V 25MA TO236AB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)

Lieferzeit 21-28 Tag (e)
auf Bestellung 28831 Stücke - Preis und Lieferfrist anzeigen
|
BFS20,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 25MA TO236AB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 9000 Stücke Description: TRANS NPN 20V 25MA TO236AB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)

Lieferzeit 21-28 Tag (e)
auf Bestellung 29455 Stücke - Preis und Lieferfrist anzeigen
|
PESD2USB3SZ |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5V 10WLCSP
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
auf Bestellung 8383 Stücke Description: TVS DIODE 5.5V 10WLCSP
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener

Lieferzeit 21-28 Tag (e)
auf Bestellung 7170 Stücke - Preis und Lieferfrist anzeigen
|
PESD2USB3SZ |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5V 10WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke Description: TVS DIODE 5.5V 10WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 10-WLCSP (1.57x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, WLCSP
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 11053 Stücke - Preis und Lieferfrist anzeigen
|
BUK7535-100A,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2535pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 149W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 41A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2535pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 149W (Tc)
BUK7E4R6-60E,127 |
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_SOT226%20Pkg.jpg)
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A I2PAK
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 234W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Nexperia USA Inc.
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
auf Bestellung 484 Stücke Description: MOSFET N-CH 60V 100A I2PAK
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 234W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Nexperia USA Inc.
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Lieferzeit 21-28 Tag (e)
auf Bestellung 2920 Stücke - Preis und Lieferfrist anzeigen
PRTR5V0U2AX/S911,2 |

Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Automotive
Capacitance @ Frequency: 1.8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Automotive
Capacitance @ Frequency: 1.8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
IP4365CX11/P,135 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 11WLCSP
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Zener
Unidirectional Channels: 5
Voltage - Reverse Standoff (Typ): 5.5V
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Applications: Multimedia Card Interface
Capacitance @ Frequency: 10pF @ 1MHz
Operating Temperature: -35°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 11-UFBGA, WLCSP
Supplier Device Package: 11-WLCSP (1.56x1.16)
Base Part Number: IP4365
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.5VWM 11WLCSP
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Zener
Unidirectional Channels: 5
Voltage - Reverse Standoff (Typ): 5.5V
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Applications: Multimedia Card Interface
Capacitance @ Frequency: 10pF @ 1MHz
Operating Temperature: -35°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 11-UFBGA, WLCSP
Supplier Device Package: 11-WLCSP (1.56x1.16)
Base Part Number: IP4365
IP4283CZ10-TT,118 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5V 9.5V 10TSSOP
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Voltage - Breakdown (Min): 6V
Voltage - Reverse Standoff (Typ): 5.5V
Unidirectional Channels: 4
Type: Steering (Rail to Rail)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Line Protection: Yes
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-TSSOP
Base Part Number: IP4283
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 5.5V 9.5V 10TSSOP
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Voltage - Breakdown (Min): 6V
Voltage - Reverse Standoff (Typ): 5.5V
Unidirectional Channels: 4
Type: Steering (Rail to Rail)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Line Protection: Yes
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-TSSOP
Base Part Number: IP4283
BZX84-C12,235 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 250MW SOT23
Base Part Number: BZX84C12
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 250mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
auf Bestellung 8175 Stücke Description: DIODE ZENER 12V 250MW SOT23
Base Part Number: BZX84C12
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 250mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V

Lieferzeit 21-28 Tag (e)
auf Bestellung 8097 Stücke - Preis und Lieferfrist anzeigen
BZX84-C12,235 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 250MW TO236AB
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 8097 Stücke Description: DIODE ZENER 12V 250MW TO236AB
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 8175 Stücke - Preis und Lieferfrist anzeigen
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IP4340CX15/P,135 |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 15WLCSP
Supplier Device Package: 15-WLCSP (1.56x1.56)
Package / Case: 15-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C (TA)
Capacitance @ Frequency: 11pF @ 1MHz
Applications: Multimedia Card Interface
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 6
Type: Zener
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: IP4340
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15WLCSP
Supplier Device Package: 15-WLCSP (1.56x1.56)
Package / Case: 15-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C (TA)
Capacitance @ Frequency: 11pF @ 1MHz
Applications: Multimedia Card Interface
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 6
Type: Zener
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: IP4340
auf Bestellung 117000 Stücke - Preis und Lieferfrist anzeigen
PBLS2003D,115 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN PREBIAS/PNP 0.6W 6TSOP
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Current - Collector (Ic) (Max): 100mA, 1A
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: PBLS2003
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 600mW
Frequency - Transition: 185MHz
Current - Collector Cutoff (Max): 1µA, 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN PREBIAS/PNP 0.6W 6TSOP
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Current - Collector (Ic) (Max): 100mA, 1A
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: PBLS2003
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 600mW
Frequency - Transition: 185MHz
Current - Collector Cutoff (Max): 1µA, 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 220 @ 500mA, 2V
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
auf Bestellung 1002 Stücke - Preis und Lieferfrist anzeigen
BUK7Y3R0-40HX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Package / Case: SC-100, SOT-669
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 172W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5449pF @ 25V
Vgs (Max): +20V, -10V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Supplier Device Package: LFPAK56, Power-SO8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A LFPAK56
Package / Case: SC-100, SOT-669
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 172W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5449pF @ 25V
Vgs (Max): +20V, -10V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Supplier Device Package: LFPAK56, Power-SO8
PDZ5.6BGWJ |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 365MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.23%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 365 mW
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.6V 365MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.23%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 365 mW
Part Status: Active
auf Bestellung 30084 Stücke - Preis und Lieferfrist anzeigen
PQMB11Z |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP/PNP RET 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP/PNP RET 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 230mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 4975 Stücke - Preis und Lieferfrist anzeigen
BCW33,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 32V 0.1A SOT23
Frequency - Transition: 100MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
Base Part Number: BCW33
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max): 32V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2861 Stücke Description: TRANS NPN 32V 0.1A SOT23
Frequency - Transition: 100MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
Base Part Number: BCW33
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max): 32V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)

Lieferzeit 21-28 Tag (e)
auf Bestellung 97941 Stücke - Preis und Lieferfrist anzeigen
PBLS6021D,115 |
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Hersteller: Nexperia USA Inc.
Description: NEXPERIA PBLS6021D - SMALL SIGNA
Part Status: Active
Packaging: Bulk
auf Bestellung 45000 Stücke Description: NEXPERIA PBLS6021D - SMALL SIGNA
Part Status: Active
Packaging: Bulk

Lieferzeit 21-28 Tag (e)
auf Bestellung 177000 Stücke - Preis und Lieferfrist anzeigen
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BZX84W-B33F |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 275MW SOT323
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 275 mW
Part Status: Active
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 33V 275MW SOT323
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 275 mW
Part Status: Active
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 9900 Stücke - Preis und Lieferfrist anzeigen
74AHC1G09GV-Q100H |
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Hersteller: Nexperia USA Inc.
Description: IC GATE AND OD 1CH 2-INP 5TSOP
Base Part Number: 74AHC1G09
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-74A
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Logic Level - High: 1.5V ~ 3.85V
Logic Level - Low: 0.5V ~ 1.65V
Current - Output High, Low: -, 8mA
Current - Quiescent (Max): 1µA
Voltage - Supply: 2V ~ 5.5V
Features: Open Drain
Number of Inputs: 2
Number of Circuits: 1
Logic Type: AND Gate
Part Status: Active
auf Bestellung 3000 Stücke Description: IC GATE AND OD 1CH 2-INP 5TSOP
Base Part Number: 74AHC1G09
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-74A
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Logic Level - High: 1.5V ~ 3.85V
Logic Level - Low: 0.5V ~ 1.65V
Current - Output High, Low: -, 8mA
Current - Quiescent (Max): 1µA
Voltage - Supply: 2V ~ 5.5V
Features: Open Drain
Number of Inputs: 2
Number of Circuits: 1
Logic Type: AND Gate
Part Status: Active

Lieferzeit 21-28 Tag (e)
74AHC1G09GW-Q100H |
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Hersteller: Nexperia USA Inc.
Description: IC GATE AND OD 1CH 2-INP 5TSSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Logic Level - Low: 0.5V ~ 1.65V
Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: 5-TSSOP
Number of Inputs: 2
Current - Output High, Low: -, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Open Drain
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE AND OD 1CH 2-INP 5TSSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Logic Level - Low: 0.5V ~ 1.65V
Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: 5-TSSOP
Number of Inputs: 2
Current - Output High, Low: -, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Open Drain
Packaging: Cut Tape (CT)
auf Bestellung 3095 Stücke - Preis und Lieferfrist anzeigen
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