Die Produkte nexperia usa inc.

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BUK7225-55A,118 BUK7225-55A,118 BUK7225-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 43A DPAK
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
auf Bestellung 280 Stücke
Lieferzeit 21-28 Tag (e)
BUK7222-55A,118 BUK7222-55A,118 BUK7222-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 48A DPAK
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 55V 48A DPAK
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke
Lieferzeit 21-28 Tag (e)
9+ 2.96 EUR
10+ 2.64 EUR
PSMN040-100MSEX PSMN040-100MSEX PSMN040-100MSE.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 30A LFPAK33
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Power Dissipation (Max): 91W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7K25-40E,115 BUK7K25-40E,115 BUK7K25-40E.pdf Nexperia USA Inc. Description: MOSFET 2N-CH 40V 27A LFPAK56D
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 27A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN7R0-60YS,115 PSMN7R0-60YS,115 PSMN7R0-60YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 89A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17002 Stücke - Preis und Lieferfrist anzeigen
PSMN4R3-30BL,118 PSMN4R3-30BL,118 PSMN4R3-30BL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
800+ 2.09 EUR
1600+ 1.65 EUR
Nexperia USA Inc. Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 3967 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.64 EUR
10+ 3.24 EUR
100+ 2.53 EUR
PSMN017-80BS,118 PSMN017-80BS,118 PSMN017-80BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 50A D2PAK
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2624 Stücke - Preis und Lieferfrist anzeigen
800+ 2.19 EUR
1600+ 1.73 EUR
PSMN027-100BS,118 PSMN027-100BS,118 PSMN027-100BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 37A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5803 Stücke - Preis und Lieferfrist anzeigen
800+ 2.13 EUR
1600+ 1.68 EUR
Nexperia USA Inc. Description: MOSFET N-CH 100V 37A D2PAK
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
auf Bestellung 3803 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5803 Stücke - Preis und Lieferfrist anzeigen
7+ 3.72 EUR
10+ 3.31 EUR
100+ 2.58 EUR
BUK768R1-40E,118 BUK768R1-40E,118 BUK768R1-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1052 Stücke - Preis und Lieferfrist anzeigen
800+ 2.25 EUR
BUK9614-60E,118 BUK9614-60E,118 BUK9614-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 56A D2PAK
Power Dissipation (Max): 96W (Tc)
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4003 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 60V 56A D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 564 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4003 Stücke - Preis und Lieferfrist anzeigen
10+ 2.63 EUR
12+ 2.34 EUR
100+ 1.83 EUR
BUK9Y14-40B,115 BUK9Y14-40B,115 BUK9Y14-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 56A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7K35-60EX BUK7K35-60EX BUK7K35-60E.pdf Nexperia USA Inc. Description: MOSFET 2N-CH 60V 20.7A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 38W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20.7A
Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9637-100E,118 BUK9637-100E,118 BUK9637-100E.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 31A D2PAK
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2681pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 96W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9628-55A,118 BUK9628-55A,118 BUK9528_9628_55A-01.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 42A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7675-100A,118 BUK7675-100A,118 BUK7575-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 23A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 99W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 100V 23A D2PAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Power Dissipation (Max): 99W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
PSMN2R6-40YS,115 PSMN2R6-40YS,115 PSMN2R6-40YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A LFPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 131W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Input Capacitance (Ciss) (Max) @ Vds: 3776 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 41970 Stücke - Preis und Lieferfrist anzeigen
PHB32N06LT,118 PHB32N06LT,118 PHB32N06LT.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 34A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Part Status: Active
auf Bestellung 5600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1374 Stücke - Preis und Lieferfrist anzeigen
800+ 2.01 EUR
1600+ 1.58 EUR
Nexperia USA Inc. Description: MOSFET N-CH 60V 34A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 6166 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1374 Stücke - Preis und Lieferfrist anzeigen
8+ 3.48 EUR
10+ 3.11 EUR
100+ 2.43 EUR
BUK7215-55A,118 BUK7215-55A,118 BUK7215-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
BUK9240-100A,118 BUK9240-100A,118 BUK9240-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 33A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3072pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1951 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 100V 33A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3072pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1951 Stücke - Preis und Lieferfrist anzeigen
BUK626R2-40C,118 BUK626R2-40C,118 BUK626R2-40C.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9660-100A,118 BUK9660-100A,118 BUK9660-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 26A D2PAK
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1924pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 4800 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: MOSFET N-CH 100V 26A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1924pF @ 25V
Packaging: Cut Tape (CT)
Part Status: Active
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 4906 Stücke
Lieferzeit 21-28 Tag (e)
BUK7660-100A,118 BUK7660-100A,118 BUK7660-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 26A D2PAK
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7661 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 100V 26A D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Part Status: Obsolete
Manufacturer: Nexperia USA Inc.
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 25V
Vgs (Max): ±20V
auf Bestellung 1258 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7661 Stücke - Preis und Lieferfrist anzeigen
BUK9624-55A,118 BUK9624-55A,118 BUK9624-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 105W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 55V 46A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
auf Bestellung 457 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.64 EUR
10+ 3.25 EUR
100+ 2.53 EUR
BUK7227-100B,118 BUK7227-100B,118 BUK7227-100B.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 48A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2789pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: BUK7227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 100V 48A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Power Dissipation (Max): 167W (Tc)
Base Part Number: BUK7227
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2789pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
auf Bestellung 11245 Stücke
Lieferzeit 21-28 Tag (e)
BUK969R0-60E,118 BUK969R0-60E,118 BUK969R0-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 75A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5109 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 60V 75A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Packaging: Cut Tape (CT)
auf Bestellung 2941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5109 Stücke - Preis und Lieferfrist anzeigen
BUK965R4-40E,118 BUK965R4-40E,118 BUK965R4-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33.9nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 4483pF @ 25V
Power Dissipation (Max): 137W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8305 Stücke - Preis und Lieferfrist anzeigen
NX138AKSX NX138AKSX NX138AKS.pdf Nexperia USA Inc. Description: MOSFET 2 N-CH 60V 170MA 6TSSOP
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 325mW
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R1-25YLC,115 PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf Nexperia USA Inc. Description: MOSFET N-CH 25V 100A LFPAK56
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7400 Stücke - Preis und Lieferfrist anzeigen
PSMN3R4-30BL,118 PSMN3R4-30BL,118 PSMN3R4-30BL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 15V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: PSMN3R4
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3981 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 30V 100A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 15V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: PSMN3R4
auf Bestellung 1817 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3981 Stücke - Preis und Lieferfrist anzeigen
BUK9207-30B,118 BUK9207-30B,118 BUK9207-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 30V 75A DPAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
BUK9Y8R7-60E,115 BUK9Y8R7-60E,115 BUK9Y8R7-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: MOSFET N-CH 60V LFPAK
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V
Vgs (Max): ±10V
auf Bestellung 2685 Stücke
Lieferzeit 21-28 Tag (e)
NX138AKSX NX138AKSX NX138AKS.pdf Nexperia USA Inc. Description: MOSFET 2 N-CH 60V 170MA 6TSSOP
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 325mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN4R5-40BS,118 PSMN4R5-40BS,118 PSMN4R5-40BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2193 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 40V 100A D2PAK
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 186 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2193 Stücke - Preis und Lieferfrist anzeigen
7+ 4.13 EUR
10+ 3.7 EUR
100+ 2.97 EUR
BUK7207-30B,118 BUK7207-30B,118 BUK7207-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Power Dissipation (Max): 167W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN8R2-80YS,115 PSMN8R2-80YS,115 PSMN8R2-80YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 82A LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN8R2
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
BUK7635-100A,118 BUK7635-100A,118 BUK7635-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 41A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3516 Stücke - Preis und Lieferfrist anzeigen
BUK625R0-40C,118 BUK625R0-40C,118 BUK625R0-40C.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 90A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 158W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HC2G08DP,125 74HC2G08DP,125 PHGLS18956-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: IC GATE AND 2CH 2-INP 8TSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 2
Packaging: Cut Tape (CT)
Part Status: Active
Max Propagation Delay @ V, Max CL: 8ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4041 Stücke - Preis und Lieferfrist anzeigen
BUK9615-100E,118 BUK9615-100E,118 BUK9615-100E.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 66A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 6813pF @ 25V
Power Dissipation (Max): 182W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: BUK9615
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN8R7-80BS,118 PSMN8R7-80BS,118 PSMN8R7-80BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 80V 90A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.52 EUR
10+ 4.06 EUR
PSMN013-100BS,118 PSMN013-100BS,118 PSMN013-100BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 68A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2871 Stücke - Preis und Lieferfrist anzeigen
BUK9611-80E,118 BUK9611-80E,118 BUK9611-80E.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 75A D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Part Status: Active
Supplier Device Package: D2PAK
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 80V 75A D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
auf Bestellung 683 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.3 EUR
10+ 4.76 EUR
100+ 3.83 EUR
BUK9Y07-30B,115 BUK9Y07-30B,115 BUK9Y07-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A LFPAK56
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 30V 75A LFPAK56
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
auf Bestellung 11 Stücke
Lieferzeit 21-28 Tag (e)
BUK7613-75B,118 BUK7613-75B,118 BUK7613-75B.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2481 Stücke - Preis und Lieferfrist anzeigen
BUK7Y18-75B,115 BUK7Y18-75B,115 BUK7Y18-75B.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 49A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2173 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7242 Stücke - Preis und Lieferfrist anzeigen
BUK7Y12-55B,115 BUK7Y12-55B,115 BUK7Y12-55B.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 61.8A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15484 Stücke - Preis und Lieferfrist anzeigen
BUK7K17-60EX BUK7K17-60EX BUK7K17-60E.pdf Nexperia USA Inc. Description: MOSFET 2N-CH 60V 30A 56LFPAK
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9K8R7-40EX BUK9K8R7-40EX BUK9K8R7-40E.pdf Nexperia USA Inc. Description: MOSFET 2N-CH 40V 30A 56LFPAK
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 836 Stücke - Preis und Lieferfrist anzeigen
BUK7628-100A,118 BUK7628-100A,118 BUK7628-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 47A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7339 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 100V 47A D2PAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Power Dissipation (Max): 166W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7339 Stücke - Preis und Lieferfrist anzeigen
BUK7607-30B,118 BUK7607-30B,118 BUK7607-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2427pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN3R4-30BLE,118 PSMN3R4-30BLE,118 PSMN3R4-30BLE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 120A D2PAK
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 178W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2921 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 30V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
auf Bestellung 78 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2921 Stücke - Preis und Lieferfrist anzeigen
5+ 5.2 EUR
10+ 4.66 EUR
BUK764R0-40E,118 BUK764R0-40E,118 BUK764R0-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Power Dissipation (Max): 182W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4405pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
BUK966R5-60E,118 BUK966R5-60E,118 BUK966R5-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN2R0-30BL,118 PSMN2R0-30BL,118 PSMN2R0-30BL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 15V
Power Dissipation (Max): 211W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 134 Stücke - Preis und Lieferfrist anzeigen
PSMN2R8-40BS,118 PSMN2R8-40BS,118 PSMN2R8-40BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 211W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4491pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6867 Stücke - Preis und Lieferfrist anzeigen
BUK7611-55A,118 BUK7611-55A,118 BUK7611-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3093pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4758 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3093pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 4712 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4758 Stücke - Preis und Lieferfrist anzeigen
PSMN6R5-80BS,118 PSMN6R5-80BS,118 PSMN6R5-80BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 80V 100A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.06 EUR
10+ 5.44 EUR
PSMN9R5-100BS,118 PSMN9R5-100BS,118 PSMN9R5-100BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 89A D2PAK
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9620-100B,118 BUK9620-100B,118 BUK9620-100B.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 63A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5657 pF @ 25 V
Power Dissipation (Max): 203W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 53.4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11546 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 100V 63A D2PAK
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5657 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 203W (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V
auf Bestellung 1481 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11546 Stücke - Preis und Lieferfrist anzeigen
6+ 5.17 EUR
10+ 4.65 EUR
100+ 3.73 EUR
BUK9K32-100EX BUK9K32-100EX BUK9K32-100E.pdf Nexperia USA Inc. Description: MOSFET 2N-CH 100V 26A 56LFPAK
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 26A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
BUK7225-55A,118 BUK7225-55A.pdf
BUK7225-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 43A DPAK
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 94W (Tc)
auf Bestellung 280 Stücke
Lieferzeit 21-28 Tag (e)
BUK7222-55A,118 BUK7222-55A.pdf
BUK7222-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 48A DPAK
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 82 Stücke - Preis und Lieferfrist anzeigen
BUK7222-55A,118 BUK7222-55A.pdf
BUK7222-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 48A DPAK
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke
Lieferzeit 21-28 Tag (e)
9+ 2.96 EUR
10+ 2.64 EUR
PSMN040-100MSEX PSMN040-100MSE.pdf
PSMN040-100MSEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK33
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Power Dissipation (Max): 91W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7K25-40E,115 BUK7K25-40E.pdf
BUK7K25-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 27A LFPAK56D
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 27A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 89A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17002 Stücke - Preis und Lieferfrist anzeigen
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
PSMN4R3-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3967 Stücke - Preis und Lieferfrist anzeigen
800+ 2.09 EUR
1600+ 1.65 EUR
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
PSMN4R3-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 3967 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
8+ 3.64 EUR
10+ 3.24 EUR
100+ 2.53 EUR
PSMN017-80BS,118 PSMN017-80BS.pdf
PSMN017-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A D2PAK
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2624 Stücke - Preis und Lieferfrist anzeigen
800+ 2.19 EUR
1600+ 1.73 EUR
PSMN027-100BS,118 PSMN027-100BS.pdf
PSMN027-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 37A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9606 Stücke - Preis und Lieferfrist anzeigen
800+ 2.13 EUR
1600+ 1.68 EUR
PSMN027-100BS,118 PSMN027-100BS.pdf
PSMN027-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 37A D2PAK
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
auf Bestellung 3803 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9003 Stücke - Preis und Lieferfrist anzeigen
7+ 3.72 EUR
10+ 3.31 EUR
100+ 2.58 EUR
BUK768R1-40E,118 BUK768R1-40E.pdf
BUK768R1-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1052 Stücke - Preis und Lieferfrist anzeigen
800+ 2.25 EUR
BUK9614-60E,118 BUK9614-60E.pdf
BUK9614-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 56A D2PAK
Power Dissipation (Max): 96W (Tc)
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4567 Stücke - Preis und Lieferfrist anzeigen
BUK9614-60E,118 BUK9614-60E.pdf
BUK9614-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 56A D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 564 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4003 Stücke - Preis und Lieferfrist anzeigen
10+ 2.63 EUR
12+ 2.34 EUR
100+ 1.83 EUR
BUK9Y14-40B,115 BUK9Y14-40B.pdf
BUK9Y14-40B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 56A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7K35-60EX BUK7K35-60E.pdf
BUK7K35-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 20.7A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 38W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20.7A
Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9637-100E,118 BUK9637-100E.pdf
BUK9637-100E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 31A D2PAK
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2681pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 96W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9628-55A,118 BUK9528_9628_55A-01.pdf
BUK9628-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 42A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7675-100A,118 BUK7575-100A.pdf
BUK7675-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 99W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 48 Stücke - Preis und Lieferfrist anzeigen
BUK7675-100A,118 BUK7575-100A.pdf
BUK7675-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Power Dissipation (Max): 99W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
PSMN2R6-40YS,115 PSMN2R6-40YS.pdf
PSMN2R6-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 131W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Input Capacitance (Ciss) (Max) @ Vds: 3776 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 41970 Stücke - Preis und Lieferfrist anzeigen
PHB32N06LT,118 PHB32N06LT.pdf
PHB32N06LT,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Part Status: Active
auf Bestellung 5600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7540 Stücke - Preis und Lieferfrist anzeigen
800+ 2.01 EUR
1600+ 1.58 EUR
PHB32N06LT,118 PHB32N06LT.pdf
PHB32N06LT,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 6166 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6974 Stücke - Preis und Lieferfrist anzeigen
8+ 3.48 EUR
10+ 3.11 EUR
100+ 2.43 EUR
BUK7215-55A,118 BUK7215-55A.pdf
BUK7215-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
BUK9240-100A,118 BUK9240-100A.pdf
BUK9240-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 33A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3072pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6951 Stücke - Preis und Lieferfrist anzeigen
BUK9240-100A,118 BUK9240-100A.pdf
BUK9240-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 33A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3072pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6951 Stücke - Preis und Lieferfrist anzeigen
BUK626R2-40C,118 BUK626R2-40C.pdf
BUK626R2-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9660-100A,118 BUK9660-100A.pdf
BUK9660-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 26A D2PAK
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1924pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 4800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4906 Stücke - Preis und Lieferfrist anzeigen
BUK9660-100A,118 BUK9660-100A.pdf
BUK9660-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 26A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1924pF @ 25V
Packaging: Cut Tape (CT)
Part Status: Active
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 4906 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4800 Stücke - Preis und Lieferfrist anzeigen
BUK7660-100A,118 BUK7660-100A.pdf
BUK7660-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 26A D2PAK
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8919 Stücke - Preis und Lieferfrist anzeigen
BUK7660-100A,118 BUK7660-100A.pdf
BUK7660-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 26A D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Part Status: Obsolete
Manufacturer: Nexperia USA Inc.
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 25V
Vgs (Max): ±20V
auf Bestellung 1258 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7661 Stücke - Preis und Lieferfrist anzeigen
BUK9624-55A,118 BUK9624-55A.pdf
BUK9624-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 105W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 457 Stücke - Preis und Lieferfrist anzeigen
BUK9624-55A,118 BUK9624-55A.pdf
BUK9624-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
auf Bestellung 457 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.64 EUR
10+ 3.25 EUR
100+ 2.53 EUR
BUK7227-100B,118 BUK7227-100B.pdf
BUK7227-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 48A DPAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2789pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: BUK7227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11245 Stücke - Preis und Lieferfrist anzeigen
BUK7227-100B,118 BUK7227-100B.pdf
BUK7227-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 48A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Power Dissipation (Max): 167W (Tc)
Base Part Number: BUK7227
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2789pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
auf Bestellung 11245 Stücke
Lieferzeit 21-28 Tag (e)
BUK969R0-60E,118 BUK969R0-60E.pdf
BUK969R0-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8050 Stücke - Preis und Lieferfrist anzeigen
BUK969R0-60E,118 BUK969R0-60E.pdf
BUK969R0-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Packaging: Cut Tape (CT)
auf Bestellung 2941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7509 Stücke - Preis und Lieferfrist anzeigen
BUK965R4-40E,118 BUK965R4-40E.pdf
BUK965R4-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33.9nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 4483pF @ 25V
Power Dissipation (Max): 137W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8305 Stücke - Preis und Lieferfrist anzeigen
NX138AKSX NX138AKS.pdf
NX138AKSX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2 N-CH 60V 170MA 6TSSOP
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 325mW
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
PSMN1R1-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7400 Stücke - Preis und Lieferfrist anzeigen
PSMN3R4-30BL,118 PSMN3R4-30BL.pdf
PSMN3R4-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 15V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: PSMN3R4
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5798 Stücke - Preis und Lieferfrist anzeigen
PSMN3R4-30BL,118 PSMN3R4-30BL.pdf
PSMN3R4-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 15V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: PSMN3R4
auf Bestellung 1817 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5581 Stücke - Preis und Lieferfrist anzeigen
BUK9207-30B,118 BUK9207-30B.pdf
BUK9207-30B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
BUK9207-30B,118 BUK9207-30B.pdf
BUK9207-30B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
BUK9Y8R7-60E,115 BUK9Y8R7-60E.pdf
BUK9Y8R7-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2685 Stücke - Preis und Lieferfrist anzeigen
BUK9Y8R7-60E,115 BUK9Y8R7-60E.pdf
BUK9Y8R7-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V LFPAK
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V
Vgs (Max): ±10V
auf Bestellung 2685 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
NX138AKSX NX138AKS.pdf
NX138AKSX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2 N-CH 60V 170MA 6TSSOP
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 325mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
PSMN4R5-40BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2379 Stücke - Preis und Lieferfrist anzeigen
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
PSMN4R5-40BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 186 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2193 Stücke - Preis und Lieferfrist anzeigen
7+ 4.13 EUR
10+ 3.7 EUR
100+ 2.97 EUR
BUK7207-30B,118 BUK7207-30B.pdf
BUK7207-30B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Power Dissipation (Max): 167W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN8R2-80YS,115 PSMN8R2-80YS.pdf
PSMN8R2-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 82A LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN8R2
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
BUK7635-100A,118 BUK7635-100A.pdf
BUK7635-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3516 Stücke - Preis und Lieferfrist anzeigen
BUK625R0-40C,118 BUK625R0-40C.pdf
BUK625R0-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 90A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 158W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HC2G08DP,125 PHGLS18956-1.pdf?t.download=true&u=5oefqw
74HC2G08DP,125
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 2CH 2-INP 8TSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 2
Packaging: Cut Tape (CT)
Part Status: Active
Max Propagation Delay @ V, Max CL: 8ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4041 Stücke - Preis und Lieferfrist anzeigen
BUK9615-100E,118 BUK9615-100E.pdf
BUK9615-100E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 66A D2PAK
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 6813pF @ 25V
Power Dissipation (Max): 182W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: BUK9615
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN8R7-80BS,118 PSMN8R7-80BS.pdf
PSMN8R7-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
PSMN8R7-80BS,118 PSMN8R7-80BS.pdf
PSMN8R7-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.52 EUR
10+ 4.06 EUR
PSMN013-100BS,118 PSMN013-100BS.pdf
PSMN013-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2871 Stücke - Preis und Lieferfrist anzeigen
BUK9611-80E,118 BUK9611-80E.pdf
BUK9611-80E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Part Status: Active
Supplier Device Package: D2PAK
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 683 Stücke - Preis und Lieferfrist anzeigen
BUK9611-80E,118 BUK9611-80E.pdf
BUK9611-80E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
auf Bestellung 683 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.3 EUR
10+ 4.76 EUR
100+ 3.83 EUR
BUK9Y07-30B,115 BUK9Y07-30B.pdf
BUK9Y07-30B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A LFPAK56
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11 Stücke - Preis und Lieferfrist anzeigen
BUK9Y07-30B,115 BUK9Y07-30B.pdf
BUK9Y07-30B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A LFPAK56
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
auf Bestellung 11 Stücke
Lieferzeit 21-28 Tag (e)
BUK7613-75B,118 BUK7613-75B.pdf
BUK7613-75B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2481 Stücke - Preis und Lieferfrist anzeigen
BUK7Y18-75B,115 BUK7Y18-75B.pdf
BUK7Y18-75B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 49A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2173 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7242 Stücke - Preis und Lieferfrist anzeigen
BUK7Y12-55B,115 BUK7Y12-55B.pdf
BUK7Y12-55B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 61.8A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15484 Stücke - Preis und Lieferfrist anzeigen
BUK7K17-60EX BUK7K17-60E.pdf
BUK7K17-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 30A 56LFPAK
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9K8R7-40EX BUK9K8R7-40E.pdf
BUK9K8R7-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A 56LFPAK
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 836 Stücke - Preis und Lieferfrist anzeigen
BUK7628-100A,118 BUK7628-100A.pdf
BUK7628-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 47A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7438 Stücke - Preis und Lieferfrist anzeigen
BUK7628-100A,118 BUK7628-100A.pdf
BUK7628-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 47A D2PAK
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Power Dissipation (Max): 166W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7339 Stücke - Preis und Lieferfrist anzeigen
BUK7607-30B,118 BUK7607-30B.pdf
BUK7607-30B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2427pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN3R4-30BLE,118 PSMN3R4-30BLE.pdf
PSMN3R4-30BLE,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 178W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2999 Stücke - Preis und Lieferfrist anzeigen
PSMN3R4-30BLE,118 PSMN3R4-30BLE.pdf
PSMN3R4-30BLE,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
auf Bestellung 78 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2921 Stücke - Preis und Lieferfrist anzeigen
5+ 5.2 EUR
10+ 4.66 EUR
BUK764R0-40E,118 BUK764R0-40E.pdf
BUK764R0-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Power Dissipation (Max): 182W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4405pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
BUK966R5-60E,118 BUK966R5-60E.pdf
BUK966R5-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN2R0-30BL,118 PSMN2R0-30BL.pdf
PSMN2R0-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 15V
Power Dissipation (Max): 211W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 134 Stücke - Preis und Lieferfrist anzeigen
PSMN2R8-40BS,118 PSMN2R8-40BS.pdf
PSMN2R8-40BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 211W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4491pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6867 Stücke - Preis und Lieferfrist anzeigen
BUK7611-55A,118 BUK7611-55A.pdf
BUK7611-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3093pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9470 Stücke - Preis und Lieferfrist anzeigen
BUK7611-55A,118 BUK7611-55A.pdf
BUK7611-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3093pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 4712 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8758 Stücke - Preis und Lieferfrist anzeigen
PSMN6R5-80BS,118 PSMN6R5-80BS.pdf
PSMN6R5-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
PSMN6R5-80BS,118 PSMN6R5-80BS.pdf
PSMN6R5-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.06 EUR
10+ 5.44 EUR
PSMN9R5-100BS,118 PSMN9R5-100BS.pdf
PSMN9R5-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 89A D2PAK
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9620-100B,118 BUK9620-100B.pdf
BUK9620-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 63A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5657 pF @ 25 V
Power Dissipation (Max): 203W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 53.4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13027 Stücke - Preis und Lieferfrist anzeigen
BUK9620-100B,118 BUK9620-100B.pdf
BUK9620-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 63A D2PAK
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5657 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 203W (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V
auf Bestellung 1481 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11546 Stücke - Preis und Lieferfrist anzeigen
6+ 5.17 EUR
10+ 4.65 EUR
100+ 3.73 EUR
BUK9K32-100EX BUK9K32-100E.pdf
BUK9K32-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 26A 56LFPAK
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 26A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
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