Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (27409) > Seite 98 nach 457

Wählen Sie Seite:   [  << Vorherige Seite ]  1 45 90 93 94 95 96 97 98 99 100 101 102 103 135 180 225 270 315 360 405 450 457  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
PSMN1R5-40PS,127 PSMN1R5-40PS,127 Nexperia USA Inc. PSMN1R5-40PS.pdf Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
auf Bestellung 4610 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.75 EUR
10+ 8.18 EUR
100+ 6.62 EUR
500+ 5.88 EUR
1000+ 5.04 EUR
2000+ 4.74 EUR
Mindestbestellmenge: 3
PSMN2R0-60PS,127 PSMN2R0-60PS,127 Nexperia USA Inc. PSMN2R0-60PS.pdf Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.88 EUR
10+ 8.29 EUR
100+ 6.7 EUR
500+ 5.96 EUR
1000+ 5.1 EUR
2000+ 4.8 EUR
5000+ 4.61 EUR
Mindestbestellmenge: 3
PSMN1R1-30EL,127 PSMN1R1-30EL,127 Nexperia USA Inc. PSMN1R1-30EL.pdf Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Produkt ist nicht verfügbar
PSMN3R5-80ES,127 Nexperia USA Inc. PSMN3R5-80ES.pdf Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V
Produkt ist nicht verfügbar
PSMN5R0-100ES,127 PSMN5R0-100ES,127 Nexperia USA Inc. PSMN5R0-100ES.pdf Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Produkt ist nicht verfügbar
PSMN3R5-80PS,127 PSMN3R5-80PS,127 Nexperia USA Inc. PSMN3R5-80PS.pdf Description: MOSFET N-CH 80V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 6162 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.35 EUR
10+ 8.69 EUR
100+ 7.03 EUR
500+ 6.25 EUR
1000+ 5.35 EUR
2000+ 5.04 EUR
Mindestbestellmenge: 3
PSMN4R3-80ES,127 PSMN4R3-80ES,127 Nexperia USA Inc. PSMN4R3-80ES.pdf Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
Produkt ist nicht verfügbar
PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 Nexperia USA Inc. PSMN0R9-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 6779 Stücke:
Lieferzeit 21-28 Tag (e)
1500+2.19 EUR
3000+ 2.08 EUR
Mindestbestellmenge: 1500
PSMN1R1-25YLC,115 PSMN1R1-25YLC,115 Nexperia USA Inc. PSMN1R1-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+1.95 EUR
3000+ 1.85 EUR
Mindestbestellmenge: 1500
PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 Nexperia USA Inc. PSMN1R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+1.28 EUR
3000+ 1.21 EUR
Mindestbestellmenge: 1500
PSMN1R2-30YLC,115 PSMN1R2-30YLC,115 Nexperia USA Inc. PSMN1R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+1.72 EUR
3000+ 1.62 EUR
Mindestbestellmenge: 1500
PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 Nexperia USA Inc. PSMN1R0-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 22500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+2.44 EUR
3000+ 2.32 EUR
7500+ 2.23 EUR
10500+ 2.16 EUR
Mindestbestellmenge: 1500
PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 Nexperia USA Inc. PSMN2R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+0.97 EUR
3000+ 0.91 EUR
Mindestbestellmenge: 1500
PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 Nexperia USA Inc. PSMN2R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+1.19 EUR
3000+ 1.12 EUR
Mindestbestellmenge: 1500
PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 Nexperia USA Inc. PSMN1R0-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 25888 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.15 EUR
10+ 4.27 EUR
100+ 3.4 EUR
500+ 2.87 EUR
Mindestbestellmenge: 6
PSMN1R1-25YLC,115 PSMN1R1-25YLC,115 Nexperia USA Inc. PSMN1R1-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 4323 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.11 EUR
10+ 3.41 EUR
100+ 2.71 EUR
500+ 2.3 EUR
Mindestbestellmenge: 7
PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 Nexperia USA Inc. PSMN1R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 8846 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.91 EUR
11+ 2.39 EUR
100+ 1.85 EUR
500+ 1.57 EUR
Mindestbestellmenge: 9
PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 Nexperia USA Inc. PSMN0R9-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 6779 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.6 EUR
10+ 3.83 EUR
100+ 3.05 EUR
500+ 2.58 EUR
Mindestbestellmenge: 6
PSMN1R2-30YLC,115 PSMN1R2-30YLC,115 Nexperia USA Inc. PSMN1R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 3968 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.2 EUR
100+ 2.49 EUR
500+ 2.11 EUR
Mindestbestellmenge: 7
PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 Nexperia USA Inc. PSMN2R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 6761 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
Mindestbestellmenge: 12
PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 Nexperia USA Inc. PSMN2R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 9802 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.7 EUR
12+ 2.21 EUR
100+ 1.72 EUR
500+ 1.46 EUR
Mindestbestellmenge: 10
PSMN4R0-25YLC,115 PSMN4R0-25YLC,115 Nexperia USA Inc. PSMN4R0-25YLC.pdf Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Produkt ist nicht verfügbar
PSMN2R6-30YLC,115 PSMN2R6-30YLC,115 Nexperia USA Inc. PSMN2R6-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
Produkt ist nicht verfügbar
PSMN2R9-25YLC,115 PSMN2R9-25YLC,115 Nexperia USA Inc. PSMN2R9-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
Produkt ist nicht verfügbar
PSMN4R5-30YLC,115 PSMN4R5-30YLC,115 Nexperia USA Inc. PSMN4R5-30YLC.pdf Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
Produkt ist nicht verfügbar
PSMN4R0-25YLC,115 PSMN4R0-25YLC,115 Nexperia USA Inc. PSMN4R0-25YLC.pdf Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Produkt ist nicht verfügbar
PSMN2R6-30YLC,115 PSMN2R6-30YLC,115 Nexperia USA Inc. PSMN2R6-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
auf Bestellung 1480 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
15+ 1.76 EUR
100+ 1.37 EUR
500+ 1.16 EUR
Mindestbestellmenge: 13
PSMN4R5-30YLC,115 PSMN4R5-30YLC,115 Nexperia USA Inc. PSMN4R5-30YLC.pdf Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
auf Bestellung 1367 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
16+ 1.66 EUR
100+ 1.29 EUR
500+ 1.09 EUR
Mindestbestellmenge: 13
BZX84-A5V1,215 BZX84-A5V1,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 5.1V 250MW TO236AB
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 85061 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
28+ 0.94 EUR
100+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 22
PESD3V3L5UF,115 PESD3V3L5UF,115 Nexperia USA Inc. PESDXL5UF_V_Y.pdf Description: TVS DIODE 3.3VWM 12VC 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9914 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.78 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 24
BZA856AVL,115 BZA856AVL,115 Nexperia USA Inc. BZA800AVL_SERIES.pdf Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 14545 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
40+ 0.66 EUR
100+ 0.33 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 28
BCM857BS,135 BCM857BS,135 Nexperia USA Inc. BCM857BS.pdf Description: TRANS 2PNP 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 180477 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
33+ 0.8 EUR
100+ 0.4 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 24
PMEG4030ER,115 PMEG4030ER,115 Nexperia USA Inc. PMEG4030ER.pdf Description: DIODE SCHOTTKY 40V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 19485 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
37+ 0.72 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 29
PESD3V3L5UV,115 PESD3V3L5UV,115 Nexperia USA Inc. PESDXL5UF_V_Y.pdf Description: TVS DIODE 3.3VWM 12VC SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-666
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PTVS15VS1UR,115 PTVS15VS1UR,115 Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 15VWM 24.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 22360 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
36+ 0.72 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 28
BZX84-A4V7,215 BZX84-A4V7,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 4.7V 250MW TO236AB
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 12461 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
28+ 0.94 EUR
100+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 22
PMEG3050EP,115 PMEG3050EP,115 Nexperia USA Inc. PMEG3050EP.pdf Description: DIODE SCHOTTKY 30V 5A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
auf Bestellung 34962 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
PMEG2005EL,315 PMEG2005EL,315 Nexperia USA Inc. PMEG2005EL.pdf Description: DIODE SCHOTT 20V 500MA DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q100
auf Bestellung 52145 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
40+ 0.65 EUR
100+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
2000+ 0.17 EUR
5000+ 0.16 EUR
Mindestbestellmenge: 28
PTVS18VS1UR,115 PTVS18VS1UR,115 Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 396359 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
51+ 0.51 EUR
100+ 0.31 EUR
500+ 0.28 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 39
BZV90-C5V1,115 BZV90-C5V1,115 Nexperia USA Inc. BZV90.pdf Description: DIODE ZENER 5.1V 1.5W SOT223
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q100
auf Bestellung 1980 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.4 EUR
22+ 1.2 EUR
100+ 0.83 EUR
500+ 0.65 EUR
Mindestbestellmenge: 19
PESD5V0L4UW,115 PESD5V0L4UW,115 Nexperia USA Inc. PESDXL4UF_G_W.pdf Description: TVS DIODE 5VWM 13VC SOT665
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-665
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
auf Bestellung 31250 Stücke:
Lieferzeit 21-28 Tag (e)
33+0.81 EUR
46+ 0.57 EUR
100+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 33
PMEG3030EP,115 PMEG3030EP,115 Nexperia USA Inc. PMEG3030EP.pdf Description: DIODE SCHOTTKY 30V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
auf Bestellung 163294 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
PTVS12VS1UR,115 PTVS12VS1UR,115 Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8616 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.4 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
PMP4501Y,115 PMP4501Y,115 Nexperia USA Inc. PMP4501Y.pdf Description: TRANS 2NPN 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8987 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
PMBTA45,215 PMBTA45,215 Nexperia USA Inc. PMBTA45.pdf Description: TRANS NPN 500V 0.15A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 90mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Frequency - Transition: 35MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
Qualification: AEC-Q100
auf Bestellung 103476 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.83 EUR
100+ 0.5 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
PTVS6V0S1UR,115 PTVS6V0S1UR,115 Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 6VWM 10.3VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 16441 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.4 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
PMD3001D,115 PMD3001D,115 Nexperia USA Inc. PMD3001D.pdf Description: IC MOSFET DRIVER 6TSOP
Packaging: Cut Tape (CT)
Voltage - Rated: 40V
Package / Case: SC-74, SOT-457
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Applications: MOSFET Driver
Supplier Device Package: 6-TSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 187604 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
32+ 0.82 EUR
35+ 0.75 EUR
100+ 0.56 EUR
250+ 0.5 EUR
500+ 0.42 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 26
PMZ250UN,315 PMZ250UN,315 Nexperia USA Inc. PMZ250UN.pdf Description: MOSFET N-CH 20V 2.28A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
Produkt ist nicht verfügbar
PBSS5520X,135 PBSS5520X,135 Nexperia USA Inc. PBSS5520X.pdf Description: TRANS PNP 20V 5A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.6 W
Qualification: AEC-Q100
auf Bestellung 1928 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
31+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
PBSS5350X,135 PBSS5350X,135 Nexperia USA Inc. PBSS5350X.pdf Description: TRANS PNP 50V 3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Qualification: AEC-Q100
auf Bestellung 8754 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.79 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 24
1PS70SB82,115 1PS70SB82,115 Nexperia USA Inc. 1PS70SB82_84_85_86.pdf Description: DIODE SCHOTTKY 15V 30MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA
Current - Reverse Leakage @ Vr: 200 nA @ 1 V
Qualification: AEC-Q100
auf Bestellung 7847 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
31+ 0.84 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
1PS76SB17,115 1PS76SB17,115 Nexperia USA Inc. 1PS76SB17.pdf Description: RF DIODE SCHOTTKY 4V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Current - Max: 30 mA
Qualification: AEC-Q100
auf Bestellung 329515 Stücke:
Lieferzeit 21-28 Tag (e)
42+0.62 EUR
55+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 42
PBSS4140U,115 PBSS4140U,115 Nexperia USA Inc. PBSS4140U.pdf Description: TRANS NPN 40V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Qualification: AEC-Q100
auf Bestellung 5112 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
PTVS11VS1UR,115 PTVS11VS1UR,115 Nexperia USA Inc. PTVSXS1UR_SER.pdf Description: TVS DIODE 11VWM 18.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5927 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.4 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
BZX84-A5V6,215 BZX84-A5V6,215 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 5.6V 250MW TO236AB
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6355 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
28+ 0.94 EUR
100+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 22
PMP4201Y,115 PMP4201Y,115 Nexperia USA Inc. PMP4201Y.pdf Description: TRANS 2NPN 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 12868 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
29+ 0.9 EUR
100+ 0.54 EUR
500+ 0.5 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
PBHV8115T,215 PBHV8115T,215 Nexperia USA Inc. PBHV8115T.pdf Description: TRANS NPN 150V 1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
auf Bestellung 2123 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.83 EUR
100+ 0.5 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
PBSS5540X,135 PBSS5540X,135 Nexperia USA Inc. PBSS5540X.pdf Description: TRANS PNP 40V 4A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
Qualification: AEC-Q100
auf Bestellung 26500 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.9 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
2000+ 0.35 EUR
Mindestbestellmenge: 25
PHT6NQ10T,135 PHT6NQ10T,135 Nexperia USA Inc. PHT6NQ10T.pdf Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
auf Bestellung 4931 Stücke:
Lieferzeit 21-28 Tag (e)
13+2 EUR
16+ 1.64 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
2000+ 0.83 EUR
Mindestbestellmenge: 13
PESD3V3S1UL,315 PESD3V3S1UL,315 Nexperia USA Inc. PESD3V3S1UL.pdf Description: TVS DIODE 3.3VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 207pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 49017 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
37+ 0.72 EUR
100+ 0.36 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
2000+ 0.18 EUR
Mindestbestellmenge: 25
PSMN1R5-40PS,127 PSMN1R5-40PS.pdf
PSMN1R5-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
auf Bestellung 4610 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.75 EUR
10+ 8.18 EUR
100+ 6.62 EUR
500+ 5.88 EUR
1000+ 5.04 EUR
2000+ 4.74 EUR
Mindestbestellmenge: 3
PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.88 EUR
10+ 8.29 EUR
100+ 6.7 EUR
500+ 5.96 EUR
1000+ 5.1 EUR
2000+ 4.8 EUR
5000+ 4.61 EUR
Mindestbestellmenge: 3
PSMN1R1-30EL,127 PSMN1R1-30EL.pdf
PSMN1R1-30EL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Produkt ist nicht verfügbar
PSMN3R5-80ES,127 PSMN3R5-80ES.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V
Produkt ist nicht verfügbar
PSMN5R0-100ES,127 PSMN5R0-100ES.pdf
PSMN5R0-100ES,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Produkt ist nicht verfügbar
PSMN3R5-80PS,127 PSMN3R5-80PS.pdf
PSMN3R5-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 6162 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.35 EUR
10+ 8.69 EUR
100+ 7.03 EUR
500+ 6.25 EUR
1000+ 5.35 EUR
2000+ 5.04 EUR
Mindestbestellmenge: 3
PSMN4R3-80ES,127 PSMN4R3-80ES.pdf
PSMN4R3-80ES,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
Produkt ist nicht verfügbar
PSMN0R9-25YLC,115 PSMN0R9-25YLC.pdf
PSMN0R9-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 6779 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+2.19 EUR
3000+ 2.08 EUR
Mindestbestellmenge: 1500
PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
PSMN1R1-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.95 EUR
3000+ 1.85 EUR
Mindestbestellmenge: 1500
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.28 EUR
3000+ 1.21 EUR
Mindestbestellmenge: 1500
PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
PSMN1R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.72 EUR
3000+ 1.62 EUR
Mindestbestellmenge: 1500
PSMN1R0-30YLC,115 PSMN1R0-30YLC.pdf
PSMN1R0-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 22500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+2.44 EUR
3000+ 2.32 EUR
7500+ 2.23 EUR
10500+ 2.16 EUR
Mindestbestellmenge: 1500
PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.97 EUR
3000+ 0.91 EUR
Mindestbestellmenge: 1500
PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.19 EUR
3000+ 1.12 EUR
Mindestbestellmenge: 1500
PSMN1R0-30YLC,115 PSMN1R0-30YLC.pdf
PSMN1R0-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 25888 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.15 EUR
10+ 4.27 EUR
100+ 3.4 EUR
500+ 2.87 EUR
Mindestbestellmenge: 6
PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
PSMN1R1-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 4323 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.11 EUR
10+ 3.41 EUR
100+ 2.71 EUR
500+ 2.3 EUR
Mindestbestellmenge: 7
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 8846 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.91 EUR
11+ 2.39 EUR
100+ 1.85 EUR
500+ 1.57 EUR
Mindestbestellmenge: 9
PSMN0R9-25YLC,115 PSMN0R9-25YLC.pdf
PSMN0R9-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 6779 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 3.83 EUR
100+ 3.05 EUR
500+ 2.58 EUR
Mindestbestellmenge: 6
PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
PSMN1R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 3968 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.2 EUR
100+ 2.49 EUR
500+ 2.11 EUR
Mindestbestellmenge: 7
PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 6761 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
Mindestbestellmenge: 12
PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 9802 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
12+ 2.21 EUR
100+ 1.72 EUR
500+ 1.46 EUR
Mindestbestellmenge: 10
PSMN4R0-25YLC,115 PSMN4R0-25YLC.pdf
PSMN4R0-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Produkt ist nicht verfügbar
PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
PSMN2R6-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
Produkt ist nicht verfügbar
PSMN2R9-25YLC,115 PSMN2R9-25YLC.pdf
PSMN2R9-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
Produkt ist nicht verfügbar
PSMN4R5-30YLC,115 PSMN4R5-30YLC.pdf
PSMN4R5-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
Produkt ist nicht verfügbar
PSMN4R0-25YLC,115 PSMN4R0-25YLC.pdf
PSMN4R0-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Produkt ist nicht verfügbar
PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
PSMN2R6-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
auf Bestellung 1480 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.76 EUR
100+ 1.37 EUR
500+ 1.16 EUR
Mindestbestellmenge: 13
PSMN4R5-30YLC,115 PSMN4R5-30YLC.pdf
PSMN4R5-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
auf Bestellung 1367 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
16+ 1.66 EUR
100+ 1.29 EUR
500+ 1.09 EUR
Mindestbestellmenge: 13
BZX84-A5V1,215 BZX84_SER.pdf
BZX84-A5V1,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 250MW TO236AB
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 85061 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
28+ 0.94 EUR
100+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 22
PESD3V3L5UF,115 PESDXL5UF_V_Y.pdf
PESD3V3L5UF,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 12VC 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9914 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
34+ 0.78 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 24
BZA856AVL,115 BZA800AVL_SERIES.pdf
BZA856AVL,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 14545 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
40+ 0.66 EUR
100+ 0.33 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 28
BCM857BS,135 BCM857BS.pdf
BCM857BS,135
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 180477 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
33+ 0.8 EUR
100+ 0.4 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 24
PMEG4030ER,115 PMEG4030ER.pdf
PMEG4030ER,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 19485 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
37+ 0.72 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 29
PESD3V3L5UV,115 PESDXL5UF_V_Y.pdf
PESD3V3L5UV,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 12VC SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-666
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PTVS15VS1UR,115 PTVSXS1UR_SER.pdf
PTVS15VS1UR,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 15VWM 24.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 22360 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
36+ 0.72 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 28
BZX84-A4V7,215 BZX84_SER.pdf
BZX84-A4V7,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 250MW TO236AB
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 12461 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
28+ 0.94 EUR
100+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 22
PMEG3050EP,115 PMEG3050EP.pdf
PMEG3050EP,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 5A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
auf Bestellung 34962 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
PMEG2005EL,315 PMEG2005EL.pdf
PMEG2005EL,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTT 20V 500MA DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q100
auf Bestellung 52145 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
40+ 0.65 EUR
100+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
2000+ 0.17 EUR
5000+ 0.16 EUR
Mindestbestellmenge: 28
PTVS18VS1UR,115 PTVSXS1UR_SER.pdf
PTVS18VS1UR,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 396359 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
51+ 0.51 EUR
100+ 0.31 EUR
500+ 0.28 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 39
BZV90-C5V1,115 BZV90.pdf
BZV90-C5V1,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 1.5W SOT223
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q100
auf Bestellung 1980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.4 EUR
22+ 1.2 EUR
100+ 0.83 EUR
500+ 0.65 EUR
Mindestbestellmenge: 19
PESD5V0L4UW,115 PESDXL4UF_G_W.pdf
PESD5V0L4UW,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 13VC SOT665
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-665
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
auf Bestellung 31250 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
33+0.81 EUR
46+ 0.57 EUR
100+ 0.29 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 33
PMEG3030EP,115 PMEG3030EP.pdf
PMEG3030EP,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
auf Bestellung 163294 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
PTVS12VS1UR,115 PTVSXS1UR_SER.pdf
PTVS12VS1UR,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8616 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.4 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
PMP4501Y,115 PMP4501Y.pdf
PMP4501Y,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8987 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
PMBTA45,215 PMBTA45.pdf
PMBTA45,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 500V 0.15A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 90mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Frequency - Transition: 35MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
Qualification: AEC-Q100
auf Bestellung 103476 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.83 EUR
100+ 0.5 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
PTVS6V0S1UR,115 PTVSXS1UR_SER.pdf
PTVS6V0S1UR,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 6VWM 10.3VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 16441 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.4 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
PMD3001D,115 PMD3001D.pdf
PMD3001D,115
Hersteller: Nexperia USA Inc.
Description: IC MOSFET DRIVER 6TSOP
Packaging: Cut Tape (CT)
Voltage - Rated: 40V
Package / Case: SC-74, SOT-457
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Applications: MOSFET Driver
Supplier Device Package: 6-TSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 187604 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
32+ 0.82 EUR
35+ 0.75 EUR
100+ 0.56 EUR
250+ 0.5 EUR
500+ 0.42 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 26
PMZ250UN,315 PMZ250UN.pdf
PMZ250UN,315
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.28A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
Produkt ist nicht verfügbar
PBSS5520X,135 PBSS5520X.pdf
PBSS5520X,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 5A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.6 W
Qualification: AEC-Q100
auf Bestellung 1928 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
31+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
PBSS5350X,135 PBSS5350X.pdf
PBSS5350X,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 50V 3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Qualification: AEC-Q100
auf Bestellung 8754 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
34+ 0.79 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 24
1PS70SB82,115 1PS70SB82_84_85_86.pdf
1PS70SB82,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 15V 30MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA
Current - Reverse Leakage @ Vr: 200 nA @ 1 V
Qualification: AEC-Q100
auf Bestellung 7847 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
31+ 0.84 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
1PS76SB17,115 1PS76SB17.pdf
1PS76SB17,115
Hersteller: Nexperia USA Inc.
Description: RF DIODE SCHOTTKY 4V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Current - Max: 30 mA
Qualification: AEC-Q100
auf Bestellung 329515 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
42+0.62 EUR
55+ 0.48 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 42
PBSS4140U,115 PBSS4140U.pdf
PBSS4140U,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Qualification: AEC-Q100
auf Bestellung 5112 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
PTVS11VS1UR,115 PTVSXS1UR_SER.pdf
PTVS11VS1UR,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 11VWM 18.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5927 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.4 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
BZX84-A5V6,215 BZX84_SER.pdf
BZX84-A5V6,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 250MW TO236AB
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 6355 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
28+ 0.94 EUR
100+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 22
PMP4201Y,115 PMP4201Y.pdf
PMP4201Y,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 45V 0.1A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 12868 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
29+ 0.9 EUR
100+ 0.54 EUR
500+ 0.5 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
PBHV8115T,215 PBHV8115T.pdf
PBHV8115T,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 150V 1A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
auf Bestellung 2123 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.83 EUR
100+ 0.5 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
PBSS5540X,135 PBSS5540X.pdf
PBSS5540X,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 4A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
Qualification: AEC-Q100
auf Bestellung 26500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.9 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
2000+ 0.35 EUR
Mindestbestellmenge: 25
PHT6NQ10T,135 PHT6NQ10T.pdf
PHT6NQ10T,135
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
auf Bestellung 4931 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2 EUR
16+ 1.64 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
2000+ 0.83 EUR
Mindestbestellmenge: 13
PESD3V3S1UL,315 PESD3V3S1UL.pdf
PESD3V3S1UL,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 207pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 49017 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
37+ 0.72 EUR
100+ 0.36 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
2000+ 0.18 EUR
Mindestbestellmenge: 25
Wählen Sie Seite:   [  << Vorherige Seite ]  1 45 90 93 94 95 96 97 98 99 100 101 102 103 135 180 225 270 315 360 405 450 457  [ Nächste Seite >> ]