Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (31763) > Seite 108 nach 530

Wählen Sie Seite:   [  << Vorherige Seite ]  1 53 103 104 105 106 107 108 109 110 111 112 113 159 212 265 318 371 424 477 530  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BUK7609-75A,118 BUK7609-75A,118 Nexperia USA Inc. BUK7609-75A.pdf Description: MOSFET N-CH 75V 75A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7635-100A,118 BUK7635-100A,118 Nexperia USA Inc. BUK7635-100A.pdf Description: MOSFET N-CH 100V 41A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9219-55A,118 BUK9219-55A,118 Nexperia USA Inc. BUK9219-55A.pdf Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.08 EUR
10+2.52 EUR
100+1.96 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9226-75A,118 BUK9226-75A,118 Nexperia USA Inc. BUK9226-75A.pdf Description: MOSFET N-CH 75V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.61 EUR
10+2.95 EUR
50+2.24 EUR
100+2.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9240-100A,118 BUK9240-100A,118 Nexperia USA Inc. BUK9240-100A.pdf Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 931 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.61 EUR
10+2.95 EUR
50+2.24 EUR
100+2.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9606-55A,118 BUK9606-55A,118 Nexperia USA Inc. BUK9606-55A.pdf Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.46 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9609-75A,118 BUK9609-75A,118 Nexperia USA Inc. BUK9609-75A.pdf Description: MOSFET N-CH 75V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9620-55A,118 BUK9620-55A,118 Nexperia USA Inc. BUK9620-55A.pdf Description: MOSFET N-CH 55V 54A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9624-55A,118 BUK9624-55A,118 Nexperia USA Inc. BUK9624-55A.pdf Description: MOSFET N-CH 55V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.2 EUR
10+2.67 EUR
100+2.12 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9628-55A,118 BUK9628-55A,118 Nexperia USA Inc. BUK9628-55A.pdf Description: MOSFET N-CH 55V 42A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9635-55A,118 BUK9635-55A,118 Nexperia USA Inc. BUK9635-55A.pdf Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5382 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.11 EUR
100+1.42 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9660-100A,118 BUK9660-100A,118 Nexperia USA Inc. BUK9660-100A.pdf Description: MOSFET N-CH 100V 26A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9675-100A,118 BUK9675-100A,118 Nexperia USA Inc. BUK9675-100A.pdf Description: MOSFET N-CH 100V 23A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 11017 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.16 EUR
10+2.67 EUR
100+1.81 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PHB20NQ20T,118 PHB20NQ20T,118 Nexperia USA Inc. PHB20NQ20T.pdf Description: MOSFET N-CH 200V 20A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PML260SN,118 PML260SN,118 Nexperia USA Inc. PML260SN.pdf Description: MOSFET N-CH 200V 8.8A DFN3333-8
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-80BS,118 PSMN012-80BS,118 Nexperia USA Inc. PSMN012-80BS.pdf Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
auf Bestellung 4794 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.02 EUR
100+2.07 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-60BS,118 PSMN015-60BS,118 Nexperia USA Inc. PSMN015-60BS.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
auf Bestellung 16381 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
10+2.56 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-80BS,118 PSMN017-80BS,118 Nexperia USA Inc. PSMN017-80BS.pdf Description: MOSFET N-CH 80V 50A D2PAK
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
auf Bestellung 10535 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+2.68 EUR
100+1.81 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN027-100BS,118 PSMN027-100BS,118 Nexperia USA Inc. PSMN027-100BS.pdf Description: MOSFET N-CH 100V 37A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN034-100BS,118 PSMN034-100BS,118 Nexperia USA Inc. PSMN034-100BS.pdf Description: MOSFET N-CH 100V 32A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
auf Bestellung 1102 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
10+2.56 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN6R5-80BS,118 PSMN6R5-80BS,118 Nexperia USA Inc. PSMN6R5-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2236 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.14 EUR
10+3.97 EUR
100+2.75 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-100BS,118 PSMN7R0-100BS,118 Nexperia USA Inc. PSMN7R0-100BS.pdf Description: MOSFET N-CH 100V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 269W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.97 EUR
10+4.53 EUR
50+3.49 EUR
100+3.15 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R6-60BS,118 PSMN7R6-60BS,118 Nexperia USA Inc. PSMN7R6-60BS.pdf Description: MOSFET N-CH 60V 92A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.25 EUR
10+2.73 EUR
100+1.86 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R7-80BS,118 PSMN8R7-80BS,118 Nexperia USA Inc. PSMN8R7-80BS.pdf Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
10+3.2 EUR
100+2.19 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-40YLC,115 PSMN1R8-40YLC,115 Nexperia USA Inc. PSMN1R8-40YLC.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.36 EUR
3000+1.26 EUR
4500+1.21 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7E2R6-60E,127 BUK7E2R6-60E,127 Nexperia USA Inc. BUK7E2R6-60E.pdf Description: MOSFET N-CH 60V 120A I2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7613-60E,118 BUK7613-60E,118 Nexperia USA Inc. BUK7613-60E.pdf Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.74 EUR
1600+1.61 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK762R9-40E,118 BUK762R9-40E,118 Nexperia USA Inc. BUK762R9-40E.pdf Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R1-60E,118 BUK763R1-60E,118 Nexperia USA Inc. BUK763R1-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.28 EUR
1600+3.07 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK764R0-40E,118 BUK764R0-40E,118 Nexperia USA Inc. BUK764R0-40E.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.02 EUR
1600+1.88 EUR
2400+1.81 EUR
4000+1.73 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK764R4-60E,118 BUK764R4-60E,118 Nexperia USA Inc. BUK764R4-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R1-40E,118 BUK768R1-40E,118 Nexperia USA Inc. BUK768R1-40E.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.69 EUR
1600+1.57 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R3-60E,118 BUK768R3-60E,118 Nexperia USA Inc. BUK768R3-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.99 EUR
1600+1.84 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9614-60E,118 BUK9614-60E,118 Nexperia USA Inc. BUK9614-60E.pdf Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R1-40E,118 BUK964R1-40E,118 Nexperia USA Inc. BUK964R1-40E.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R8-60E,118 BUK964R8-60E,118 Nexperia USA Inc. BUK964R8-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK965R4-40E,118 BUK965R4-40E,118 Nexperia USA Inc. BUK965R4-40E.pdf Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK966R5-60E,118 BUK966R5-60E,118 Nexperia USA Inc. BUK966R5-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.84 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK969R0-60E,118 BUK969R0-60E,118 Nexperia USA Inc. BUK969R0-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.68 EUR
1600+1.55 EUR
2400+1.49 EUR
4000+1.42 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K25-40E,115 BUK7K25-40E,115 Nexperia USA Inc. BUK7K25-40E.pdf Description: MOSFET 2N-CH 40V 27A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.56 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K5R1-30E,115 BUK7K5R1-30E,115 Nexperia USA Inc. BUK7K5R1-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K5R6-30E,115 BUK7K5R6-30E,115 Nexperia USA Inc. BUK7K5R6-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.63 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K6R8-40E,115 BUK7K6R8-40E,115 Nexperia USA Inc. BUK7K6R8-40E.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K18-40E,115 BUK9K18-40E,115 Nexperia USA Inc. BUK9K18-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 40V
Power - Max: 38W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K29-100E,115 BUK9K29-100E,115 Nexperia USA Inc. BUK9K29-100E.pdf Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K45-100E,115 BUK9K45-100E,115 Nexperia USA Inc. BUK9K45-100E.pdf Description: MOSFET 2N-CH 100V 21A LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 100V
Power - Max: 53W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.95 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K52-60E,115 BUK9K52-60E,115 Nexperia USA Inc. BUK9K52-60E.pdf Description: MOSFET 2N-CH 60V 16A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 60V
Power - Max: 32W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.5 EUR
3000+0.45 EUR
4500+0.44 EUR
7500+0.42 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K6R2-40E,115 BUK9K6R2-40E,115 Nexperia USA Inc. BUK9K6R2-40E.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.42 EUR
3000+1.4 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E,115 Nexperia USA Inc. BUK9K89-100E.pdf Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7613-60E,118 BUK7613-60E,118 Nexperia USA Inc. BUK7613-60E.pdf Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
10+3.38 EUR
50+2.57 EUR
100+2.31 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R1-60E,118 BUK763R1-60E,118 Nexperia USA Inc. BUK763R1-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8253 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.13 EUR
10+6 EUR
50+4.65 EUR
100+4.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R3-60E,118 BUK768R3-60E,118 Nexperia USA Inc. BUK768R3-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.9 EUR
10+3.82 EUR
50+2.92 EUR
100+2.62 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9614-60E,118 BUK9614-60E,118 Nexperia USA Inc. BUK9614-60E.pdf Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R1-40E,118 BUK964R1-40E,118 Nexperia USA Inc. BUK964R1-40E.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.89 EUR
10+3.82 EUR
100+2.63 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R8-60E,118 BUK964R8-60E,118 Nexperia USA Inc. BUK964R8-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.22 EUR
10+4.07 EUR
100+2.83 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK966R5-60E,118 BUK966R5-60E,118 Nexperia USA Inc. BUK966R5-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4765 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.25 EUR
10+3.46 EUR
100+2.49 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK969R0-60E,118 BUK969R0-60E,118 Nexperia USA Inc. BUK969R0-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5303 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
10+3.21 EUR
100+2.2 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K5R1-30E,115 BUK7K5R1-30E,115 Nexperia USA Inc. BUK7K5R1-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.71 EUR
100+2 EUR
500+1.7 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K29-100E,115 BUK9K29-100E,115 Nexperia USA Inc. BUK9K29-100E.pdf Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K45-100E,115 BUK9K45-100E,115 Nexperia USA Inc. BUK9K45-100E.pdf Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
18+1.19 EUR
100+1.09 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7609-75A,118 BUK7609-75A.pdf
BUK7609-75A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7635-100A,118 BUK7635-100A.pdf
BUK7635-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9219-55A,118 BUK9219-55A.pdf
BUK9219-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
10+2.52 EUR
100+1.96 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9226-75A,118 BUK9226-75A.pdf
BUK9226-75A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 24.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.61 EUR
10+2.95 EUR
50+2.24 EUR
100+2.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9240-100A,118 BUK9240-100A.pdf
BUK9240-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 931 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.61 EUR
10+2.95 EUR
50+2.24 EUR
100+2.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9606-55A,118 BUK9606-55A.pdf
BUK9606-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.46 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9609-75A,118 BUK9609-75A.pdf
BUK9609-75A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9620-55A,118 BUK9620-55A.pdf
BUK9620-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9624-55A,118 BUK9624-55A.pdf
BUK9624-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
10+2.67 EUR
100+2.12 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9628-55A,118 BUK9628-55A.pdf
BUK9628-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 42A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9635-55A,118 BUK9635-55A.pdf
BUK9635-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5382 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.11 EUR
100+1.42 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9660-100A,118 BUK9660-100A.pdf
BUK9660-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 26A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9675-100A,118 BUK9675-100A.pdf
BUK9675-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 11017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.16 EUR
10+2.67 EUR
100+1.81 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PHB20NQ20T,118 PHB20NQ20T.pdf
PHB20NQ20T,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 20A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PML260SN,118 PML260SN.pdf
PML260SN,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 8.8A DFN3333-8
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-80BS,118 PSMN012-80BS.pdf
PSMN012-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
auf Bestellung 4794 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.71 EUR
10+3.02 EUR
100+2.07 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
auf Bestellung 16381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+2.56 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-80BS,118 PSMN017-80BS.pdf
PSMN017-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A D2PAK
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
auf Bestellung 10535 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.19 EUR
10+2.68 EUR
100+1.81 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN027-100BS,118 PSMN027-100BS.pdf
PSMN027-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 37A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN034-100BS,118 PSMN034-100BS.pdf
PSMN034-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 32A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
auf Bestellung 1102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+2.56 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN6R5-80BS,118 PSMN6R5-80BS.pdf
PSMN6R5-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2236 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.14 EUR
10+3.97 EUR
100+2.75 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-100BS,118 PSMN7R0-100BS.pdf
PSMN7R0-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6686 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 269W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.97 EUR
10+4.53 EUR
50+3.49 EUR
100+3.15 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R6-60BS,118 PSMN7R6-60BS.pdf
PSMN7R6-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+2.73 EUR
100+1.86 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R7-80BS,118 PSMN8R7-80BS.pdf
PSMN8R7-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.2 EUR
100+2.19 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R8-40YLC,115 PSMN1R8-40YLC.pdf
PSMN1R8-40YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.36 EUR
3000+1.26 EUR
4500+1.21 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7E2R6-60E,127 BUK7E2R6-60E.pdf
BUK7E2R6-60E,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A I2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7613-60E,118 BUK7613-60E.pdf
BUK7613-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.74 EUR
1600+1.61 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK762R9-40E,118 BUK762R9-40E.pdf
BUK762R9-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R1-60E,118 BUK763R1-60E.pdf
BUK763R1-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.28 EUR
1600+3.07 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK764R0-40E,118 BUK764R0-40E.pdf
BUK764R0-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.02 EUR
1600+1.88 EUR
2400+1.81 EUR
4000+1.73 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK764R4-60E,118 BUK764R4-60E.pdf
BUK764R4-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R1-40E,118 BUK768R1-40E.pdf
BUK768R1-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.69 EUR
1600+1.57 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R3-60E,118 BUK768R3-60E.pdf
BUK768R3-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.99 EUR
1600+1.84 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9614-60E,118 BUK9614-60E.pdf
BUK9614-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R1-40E,118 BUK964R1-40E.pdf
BUK964R1-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R8-60E,118 BUK964R8-60E.pdf
BUK964R8-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK965R4-40E,118 BUK965R4-40E.pdf
BUK965R4-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK966R5-60E,118 BUK966R5-60E.pdf
BUK966R5-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.84 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK969R0-60E,118 BUK969R0-60E.pdf
BUK969R0-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.68 EUR
1600+1.55 EUR
2400+1.49 EUR
4000+1.42 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K25-40E,115 BUK7K25-40E.pdf
BUK7K25-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 27A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.56 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K5R1-30E,115 BUK7K5R1-30E.pdf
BUK7K5R1-30E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K5R6-30E,115 BUK7K5R6-30E.pdf
BUK7K5R6-30E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.63 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K6R8-40E,115 BUK7K6R8-40E.pdf
BUK7K6R8-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K18-40E,115 BUK9K18-40E.pdf
BUK9K18-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 40V
Power - Max: 38W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: LFPAK56D
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K29-100E,115 BUK9K29-100E.pdf
BUK9K29-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K45-100E,115 BUK9K45-100E.pdf
BUK9K45-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 100V
Power - Max: 53W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.95 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K52-60E,115 BUK9K52-60E.pdf
BUK9K52-60E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 16A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 60V
Power - Max: 32W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.5 EUR
3000+0.45 EUR
4500+0.44 EUR
7500+0.42 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K6R2-40E,115 BUK9K6R2-40E.pdf
BUK9K6R2-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.42 EUR
3000+1.4 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K89-100E,115 BUK9K89-100E.pdf
BUK9K89-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7613-60E,118 BUK7613-60E.pdf
BUK7613-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.26 EUR
10+3.38 EUR
50+2.57 EUR
100+2.31 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R1-60E,118 BUK763R1-60E.pdf
BUK763R1-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.13 EUR
10+6 EUR
50+4.65 EUR
100+4.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK768R3-60E,118 BUK768R3-60E.pdf
BUK768R3-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.9 EUR
10+3.82 EUR
50+2.92 EUR
100+2.62 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9614-60E,118 BUK9614-60E.pdf
BUK9614-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R1-40E,118 BUK964R1-40E.pdf
BUK964R1-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.89 EUR
10+3.82 EUR
100+2.63 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK964R8-60E,118 BUK964R8-60E.pdf
BUK964R8-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.22 EUR
10+4.07 EUR
100+2.83 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK966R5-60E,118 BUK966R5-60E.pdf
BUK966R5-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+3.46 EUR
100+2.49 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK969R0-60E,118 BUK969R0-60E.pdf
BUK969R0-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.21 EUR
100+2.2 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK7K5R1-30E,115 BUK7K5R1-30E.pdf
BUK7K5R1-30E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.71 EUR
100+2 EUR
500+1.7 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K29-100E,115 BUK9K29-100E.pdf
BUK9K29-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K45-100E,115 BUK9K45-100E.pdf
BUK9K45-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
18+1.19 EUR
100+1.09 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 53 103 104 105 106 107 108 109 110 111 112 113 159 212 265 318 371 424 477 530  [ Nächste Seite >> ]