Die Produkte nexperia usa inc.
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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74LVC2G38DP,125 |
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Nexperia USA Inc. |
Description: IC GATE NAND OD 2CH 2-INP 8TSSOP Current - Quiescent (Max): 4 µA Number of Circuits: 2 Features: Open Drain Packaging: Tape & Reel (TR) Part Status: Active Max Propagation Delay @ V, Max CL: 3.3ns @ 5V, 50pF Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Supplier Device Package: 8-TSSOP Number of Inputs: 2 Current - Output High, Low: -, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 132689 Stücke - Preis und Lieferfrist anzeigen
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74AHCT2G00DP,125 |
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Nexperia USA Inc. |
Description: IC GATE NAND 2CH 2-INP 8TSSOP Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 2 Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Base Part Number: 74AHCT2G00 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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74ALVC04BQ,115 |
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Nexperia USA Inc. |
Description: IC INVERTER 6CH 6-INP 14DHVQFN Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: 74ALVC04 Package / Case: 14-VFQFN Exposed Pad Supplier Device Package: 14-DHVQFN (2.5x3) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Max Propagation Delay @ V, Max CL: 2ns @ 3.3V, 50pF Logic Level - High: 1.7V ~ 2V Logic Level - Low: 0.7V ~ 0.8V Current - Output High, Low: 24mA, 24mA Current - Quiescent (Max): 20µA Voltage - Supply: 1.65V ~ 3.6V Number of Inputs: 6 Number of Circuits: 6 Logic Type: Inverter |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1220 Stücke - Preis und Lieferfrist anzeigen
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74HC2G00DP,125 |
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Nexperia USA Inc. |
Description: IC GATE NAND 2CH 2-INP 8TSSOP Packaging: Tape & Reel (TR) Number of Circuits: 2 Part Status: Active Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF Logic Level - Low: 0.5V ~ 1.8V Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 8-TSSOP Number of Inputs: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Current - Quiescent (Max): 20 µA Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14770 Stücke - Preis und Lieferfrist anzeigen
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74HC2G02DP,125 |
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Nexperia USA Inc. |
Description: IC GATE NOR 2CH 2-INP 8TSSOP Current - Quiescent (Max): 20 µA Number of Circuits: 2 Part Status: Active Max Propagation Delay @ V, Max CL: 8ns @ 6V, 50pF Logic Level - Low: 0.5V ~ 1.8V Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 8-TSSOP Number of Inputs: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9223 Stücke - Preis und Lieferfrist anzeigen
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74AHCT30PW,118 |
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Nexperia USA Inc. |
Description: IC GATE NAND 1CH 8-INP 14TSSOP Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Logic Level - High: 2V Logic Level - Low: 0.8V Current - Output High, Low: 8mA, 8mA Current - Quiescent (Max): 2µA Voltage - Supply: 4.5V ~ 5.5V Number of Inputs: 8 Number of Circuits: 1 Logic Type: NAND Gate Part Status: Active Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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74AHCT30PW,112 |
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Nexperia USA Inc. |
Description: IC GATE NAND 1CH 8-INP 14TSSOP Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Logic Level - High: 2V Logic Level - Low: 0.8V Current - Output High, Low: 8mA, 8mA Current - Quiescent (Max): 2µA Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Number of Inputs: 8 Number of Circuits: 1 Logic Type: NAND Gate Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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74AHCT30D,118 |
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Nexperia USA Inc. |
Description: IC GATE NAND 1CH 8-INP 14SO Operating Temperature: -40°C ~ 125°C Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Logic Level - High: 2V Logic Level - Low: 0.8V Current - Output High, Low: 8mA, 8mA Current - Quiescent (Max): 2µA Voltage - Supply: 4.5V ~ 5.5V Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO Mounting Type: Surface Mount Number of Inputs: 8 Number of Circuits: 1 Logic Type: NAND Gate Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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74AHCT30D,112 |
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Nexperia USA Inc. |
Description: IC GATE NAND 1CH 8-INP 14SO Operating Temperature: -40°C ~ 125°C Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Logic Level - High: 2V Logic Level - Low: 0.8V Current - Output High, Low: 8mA, 8mA Current - Quiescent (Max): 2µA Voltage - Supply: 4.5V ~ 5.5V Number of Inputs: 8 Number of Circuits: 1 Logic Type: NAND Gate Part Status: Obsolete Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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HEF4070BT-Q100J |
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Nexperia USA Inc. |
Description: IC GATE XOR 4CH 2-INP 14SO Logic Level - High: 3.5V ~ 11V Supplier Device Package: 14-SO Number of Inputs: 2 Current - Output High, Low: 3mA, 3mA Voltage - Supply: 3V ~ 15V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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HEF4081BT-Q100J | Nexperia USA Inc. |
Description: IC GATE AND 4CH 2-INP 14SO Supplier Device Package: 14-SO Number of Inputs: 2 Current - Output High, Low: 3.4mA, 3.4mA Voltage - Supply: 3V ~ 15V Operating Temperature: -40°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Logic Level - High: 3.5V ~ 11V Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 40ns @ 15V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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74ALVC32D-Q100J | Nexperia USA Inc. |
Description: IC GATE OR 4CH 2-INP 14SO Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 50pF Logic Level - High: 1.7V ~ 2V Logic Level - Low: 0.7V ~ 0.8V Current - Output High, Low: 24mA, 24mA Current - Quiescent (Max): 10µA Voltage - Supply: 1.65V ~ 3.6V Number of Inputs: 2 Number of Circuits: 4 Logic Type: OR Gate Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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74ALVC00D-Q100J | Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14SO Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SO Logic Level - High: 1.7V ~ 2V Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 3ns @ 3.3V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
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74HC240PW-Q100,118 |
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Nexperia USA Inc. |
Description: IC BUFFER INVERT 6V 20TSSOP Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Buffer, Inverting Number of Elements: 2 Number of Bits per Element: 4 Output Type: 3-State Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP Base Part Number: 74HC240 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PDTC144WM,315 |
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Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V DFN1006-3 Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Nexperia USA Inc. Base Part Number: PDTC144 Supplier Device Package: SOT-883 Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Power - Max: 250mW Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: NPN - Pre-Biased |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 190000 Stücke - Preis und Lieferfrist anzeigen
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PDTC144TM,315 |
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Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V DFN1006-3 Resistor - Base (R1): 47 kOhms Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-883 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 88936 Stücke - Preis und Lieferfrist anzeigen
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1N4742A,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 12V 1W DO41 Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 9 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole |
auf Bestellung 25000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 150120 Stücke - Preis und Lieferfrist anzeigen
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1N4742A,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 12V 1W DO41 Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 9 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25315 Stücke - Preis und Lieferfrist anzeigen
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1N4742A,113 |
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Nexperia USA Inc. |
Description: DIODE ZENER 12V 1W DO41 Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 9 Ohms Voltage - Zener (Nom) (Vz): 12 V Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 28231 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 146889 Stücke - Preis und Lieferfrist anzeigen
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NZH4V7B,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 500MW SOD123F Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Tolerance: ±3% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-123F Impedance (Max) (Zzt): 25 Ohms |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 29172 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 500MW SOD123F Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-123F Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Tolerance: ±3% Packaging: Cut Tape (CT) |
auf Bestellung 5903 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 29172 Stücke - Preis und Lieferfrist anzeigen
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.jpg "BZX585-C18,115") |
BZX585-C18,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 18V 300MW SOD523 Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-523 Impedance (Max) (Zzt): 45 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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NZX8V2B,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 8.2V 500MW ALF2 Base Part Number: NZX8V2 Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 8.2V Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: ALF2 Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA Current - Reverse Leakage @ Vr: 700nA @ 5V Impedance (Max) (Zzt): 20 Ohms |
auf Bestellung 4076 Stücke Lieferzeit 21-28 Tag (e) |
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NZX36A,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 36V 500MW ALF2 Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V Package / Case: DO-204AH, DO-35, Axial Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 140 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Tolerance: ±2% Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Nexperia USA Inc. |
Description: DIODE ZENER 36V 500MW ALF2 Power - Max: 500 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 140 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA |
auf Bestellung 18619 Stücke Lieferzeit 21-28 Tag (e) |
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NZH18C,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 18V 500MW SOD123F Current - Reverse Leakage @ Vr: 40 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-123F Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Tolerance: ±3% Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5611 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 18V 500MW SOD123F Current - Reverse Leakage @ Vr: 40 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-123F Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Tolerance: ±3% Packaging: Cut Tape (CT) |
auf Bestellung 4953 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5611 Stücke - Preis und Lieferfrist anzeigen
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BZX79-B3V9,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.9V 400MW ALF2 Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA |
auf Bestellung 9849 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
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BZX79-B3V6,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 400MW ALF2 Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA |
auf Bestellung 3616 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
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BZX79-B18,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 18V 400MW ALF2 Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 45 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 200°C Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 18V 400MW ALF2 Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 400 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 45 Ohms Voltage - Zener (Nom) (Vz): 18 V |
auf Bestellung 202 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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NZX2V1B,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 2.1V 500MW ALF2 Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 100 Ohms Voltage - Zener (Nom) (Vz): 2.1 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 500 mV Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW |
auf Bestellung 60000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2275 Stücke - Preis und Lieferfrist anzeigen
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BZX84-B10,235 |
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Nexperia USA Inc. |
Description: DIODE ZENER 10V 250MW TO236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Current - Reverse Leakage @ Vr: 200nA @ 7V Impedance (Max) (Zzt): 20 Ohms Power - Max: 250mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 10V Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: TO-236AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 130000 Stücke - Preis und Lieferfrist anzeigen
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BZX84-B10,215 |
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Nexperia USA Inc. |
Description: DIODE ZENER 10V 250MW TO236AB Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1440208 Stücke - Preis und Lieferfrist anzeigen
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BZX84-B33,215 |
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Nexperia USA Inc. |
Description: DIODE ZENER 33V 250MW TO236AB Base Part Number: BZX84-B33 Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Current - Reverse Leakage @ Vr: 50nA @ 23.1V Impedance (Max) (Zzt): 80 Ohms Power - Max: 250mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 33V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. |
auf Bestellung 18000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13949 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 33V 250MW TO236AB Tolerance: ±2% Voltage - Zener (Nom) (Vz): 33V Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Nexperia USA Inc. Base Part Number: BZX84-B33 Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Current - Reverse Leakage @ Vr: 50nA @ 23.1V Impedance (Max) (Zzt): 80 Ohms Power - Max: 250mW |
auf Bestellung 20072 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13949 Stücke - Preis und Lieferfrist anzeigen
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BZX384-C11,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 11V 300MW SOD323 Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Tolerance: ±5% Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 88000 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 11V 300MW SOD323 Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 11 V Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 20 Ohms |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 88000 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 11V 300MW SOD323 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: BZX384C11 Supplier Device Package: SOD-323 Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Current - Reverse Leakage @ Vr: 100nA @ 8V Impedance (Max) (Zzt): 20 Ohms Power - Max: 300mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 11V |
auf Bestellung 3434 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 88000 Stücke - Preis und Lieferfrist anzeigen
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BZX384-C33,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 33V 300MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36858 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 33V 300MW SOD323 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V |
auf Bestellung 3998 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 36858 Stücke - Preis und Lieferfrist anzeigen
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PDZ5.1BGWJ |
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Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 365MW SOD123 Supplier Device Package: SOD-123 Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Current - Reverse Leakage @ Vr: 2µA @ 1.5V Base Part Number: PDZ5.1 Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Nexperia USA Inc. Impedance (Max) (Zzt): 60 Ohms Power - Max: 365mW Tolerance: ±2.35% Voltage - Zener (Nom) (Vz): 5.1V |
auf Bestellung 11681 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 27699 Stücke - Preis und Lieferfrist anzeigen
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BZX384-B3V6,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 300MW SOD323 Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13785 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 300MW SOD323 Package / Case: SC-76, SOD-323 Tolerance: ±2% Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Packaging: Cut Tape (CT) Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount |
auf Bestellung 91 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13785 Stücke - Preis und Lieferfrist anzeigen
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BZX384-B13,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 13V 300MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 39000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10681 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 13V 300MW SOD323 Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
auf Bestellung 39788 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10681 Stücke - Preis und Lieferfrist anzeigen
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BUK961R6-40E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZX84J-C12,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 12V 550MW SOD323F Supplier Device Package: SOD-323F Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 550 mW Part Status: Active Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±5% Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BZX585-C3V3,135 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.3V 300MW SOD523 Manufacturer: Nexperia USA Inc. Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 3.3V Tolerance: ±5% Power - Max: 300mW Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Base Part Number: BZX585-C3V3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30181 Stücke - Preis und Lieferfrist anzeigen
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.jpg "BZV55-B20,115") |
BZV55-B20,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 20V 500MW LLDS Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±2% Packaging: Cut Tape (CT) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: LLDS; MiniMelf Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
auf Bestellung 27235 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 48062 Stücke - Preis und Lieferfrist anzeigen
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BZV55-B3V3,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 3.3V 500MW LLDS Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Part Status: Active Power - Max: 500 mW Supplier Device Package: LLDS; MiniMelf Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 216035 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: DIODE ZENER 3.3V 500MW LLDS Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: LLDS; MiniMelf Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount |
auf Bestellung 2360 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 216035 Stücke - Preis und Lieferfrist anzeigen
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BUK662R5-30C,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A D2PAK Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2056 Stücke - Preis und Lieferfrist anzeigen
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PSMN4R4-80PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A TO220AB Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V |
auf Bestellung 15 Stücke Lieferzeit 21-28 Tag (e) |
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PSMN2R1-40PLQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 150A TO220AB Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 293W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9584pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 FET Type: N-Channel Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN2R6-60PSQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 150A TO220AB Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 326W (Tc) Base Part Number: PSMN2R6 Manufacturer: Nexperia USA Inc. Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 7629pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
auf Bestellung 66 Stücke Lieferzeit 21-28 Tag (e) |
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BUK9506-75B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 75V FET Type: N-Channel Part Status: Obsolete Packaging: Tube Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) Manufacturer: Nexperia USA Inc. Input Capacitance (Ciss) (Max) @ Vds: 11693pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN5R0-100PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A TO220AB Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 2585 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4556 Stücke - Preis und Lieferfrist anzeigen
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_SOT226%20Pkg.jpg "BUK9E06-55A,127") |
BUK9E06-55A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7E5R2-100E,127 |
|
Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A I2PAK Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
auf Bestellung 301 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1473 Stücke - Preis und Lieferfrist anzeigen
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BUK753R8-80E,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3744 Stücke - Preis und Lieferfrist anzeigen
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_SOT226%20Pkg.jpg "PSMN6R3-120ESQ") |
PSMN6R3-120ESQ |
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Nexperia USA Inc. |
Description: MOSFET N-CH 120V 70A I2PAK Packaging: Tube Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 207.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11384pF @ 60V Power Dissipation (Max): 405W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
auf Bestellung 450 Stücke Lieferzeit 21-28 Tag (e) |
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PSMN1R1-30EL,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12580 Stücke - Preis und Lieferfrist anzeigen
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PSMN1R1-30PL,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A TO220AB Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 338W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6020 Stücke - Preis und Lieferfrist anzeigen
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PSMN5R0-100ES,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A I2PAK Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 338W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V |
auf Bestellung 2669 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 24970 Stücke - Preis und Lieferfrist anzeigen
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PSMN2R0-60ES,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 23380 Stücke - Preis und Lieferfrist anzeigen
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BUK6E2R0-30C,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A I2PAK Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 229nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 14964pF @ 25V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN2R0-60PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A TO220AB Base Part Number: PSMN2R0 Package / Case: TO-220-3 Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Nexperia USA Inc. Power Dissipation (Max): 338W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9997pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
auf Bestellung 49 Stücke Lieferzeit 21-28 Tag (e) |
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BUK7905-40AIE,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220-5 Supplier Device Package: TO-220-5 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 272W (Tc) FET Feature: Current Sensing Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 497 Stücke - Preis und Lieferfrist anzeigen
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PHP191NQ06LT,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A TO220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V |
auf Bestellung 4248 Stücke Lieferzeit 21-28 Tag (e) |
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BUK6E4R0-75C,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 120A I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 306W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 75V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19992 Stücke - Preis und Lieferfrist anzeigen
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BUK6217-55C,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 44A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 80W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Nexperia USA Inc. |
Description: MOSFET N-CH 55V 44A DPAK Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 80W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drain to Source Voltage (Vdss): 55V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Mounting Type: Surface Mount |
auf Bestellung 123 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: MOSFET N-CH 55V 44A DPAK Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 3238 Stücke Lieferzeit 21-28 Tag (e) |
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BUK9Y22-30B,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 37.7A LFPAK56 Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Last Time Buy Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 59.4W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
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PSMN2R0-30YL,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25693 Stücke - Preis und Lieferfrist anzeigen
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PSMN8R0-40BS,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 77A D2PAK Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 40 V |
auf Bestellung 3200 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7976 Stücke - Preis und Lieferfrist anzeigen
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PML340SN,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 220V 7.3A DFN3333-8 Drain to Source Voltage (Vdss): 220V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 386mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 656pF @ 30V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-VDFN Exposed Pad |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
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PSMN034-100BS,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 32A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 86W (Tc) Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V |
auf Bestellung 5600 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: MOSFET N-CH 100V 32A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel |
auf Bestellung 6257 Stücke Lieferzeit 21-28 Tag (e) |
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PSMN020-100YS,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 43A LFPAK56 Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14538 Stücke - Preis und Lieferfrist anzeigen
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PML260SN,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 8.8A DFN3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 2.6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DFN3333-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9225-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 43A DPAK Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9Y53-100B,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 23A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6193 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y10-30B,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 67A LFPAK56 Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 85W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1306 Stücke - Preis und Lieferfrist anzeigen
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BUK7Y53-100B,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 24.8A LFPAK Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 85W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1467pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc) Drain to Source Voltage (Vdss): 100V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 517 Stücke - Preis und Lieferfrist anzeigen
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PSMN1R2-25YLC,115 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 179W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4173pF @ 12V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA |
auf Bestellung 11592 Stücke Lieferzeit 21-28 Tag (e) |
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PHB66NQ03LT,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 25V 66A D2PAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 800 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1640 Stücke - Preis und Lieferfrist anzeigen
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| Nexperia USA Inc. |
Description: MOSFET N-CH 25V 66A D2PAK Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 1636 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1640 Stücke - Preis und Lieferfrist anzeigen
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BUK6210-55C,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 78A DPAK Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13960 Stücke - Preis und Lieferfrist anzeigen
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| 74LVC2G38DP,125 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND OD 2CH 2-INP 8TSSOP
Current - Quiescent (Max): 4 µA
Number of Circuits: 2
Features: Open Drain
Packaging: Tape & Reel (TR)
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.3ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND OD 2CH 2-INP 8TSSOP
Current - Quiescent (Max): 4 µA
Number of Circuits: 2
Features: Open Drain
Packaging: Tape & Reel (TR)
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.3ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
auf Bestellung 132689 Stücke - Preis und Lieferfrist anzeigen
| 74AHCT2G00DP,125 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 2-INP 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 2
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Base Part Number: 74AHCT2G00
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 2CH 2-INP 8TSSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 2
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Base Part Number: 74AHCT2G00
| 74ALVC04BQ,115 |
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Hersteller: Nexperia USA Inc.
Description: IC INVERTER 6CH 6-INP 14DHVQFN
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74ALVC04
Package / Case: 14-VFQFN Exposed Pad
Supplier Device Package: 14-DHVQFN (2.5x3)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Max Propagation Delay @ V, Max CL: 2ns @ 3.3V, 50pF
Logic Level - High: 1.7V ~ 2V
Logic Level - Low: 0.7V ~ 0.8V
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Max): 20µA
Voltage - Supply: 1.65V ~ 3.6V
Number of Inputs: 6
Number of Circuits: 6
Logic Type: Inverter
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC INVERTER 6CH 6-INP 14DHVQFN
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74ALVC04
Package / Case: 14-VFQFN Exposed Pad
Supplier Device Package: 14-DHVQFN (2.5x3)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Max Propagation Delay @ V, Max CL: 2ns @ 3.3V, 50pF
Logic Level - High: 1.7V ~ 2V
Logic Level - Low: 0.7V ~ 0.8V
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Max): 20µA
Voltage - Supply: 1.65V ~ 3.6V
Number of Inputs: 6
Number of Circuits: 6
Logic Type: Inverter
auf Bestellung 1220 Stücke - Preis und Lieferfrist anzeigen
| 74HC2G00DP,125 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 2-INP 8TSSOP
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Max): 20 µA
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
auf Bestellung 6000 Stücke Description: IC GATE NAND 2CH 2-INP 8TSSOP
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Max): 20 µA
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lieferzeit 21-28 Tag (e)
auf Bestellung 14770 Stücke - Preis und Lieferfrist anzeigen
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| 74HC2G02DP,125 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 2CH 2-INP 8TSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 8ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke Description: IC GATE NOR 2CH 2-INP 8TSSOP
Current - Quiescent (Max): 20 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 8ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 8-TSSOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 9223 Stücke - Preis und Lieferfrist anzeigen
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| 74AHCT30PW,118 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 8-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Voltage - Supply: 4.5V ~ 5.5V
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 1CH 8-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Voltage - Supply: 4.5V ~ 5.5V
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
| 74AHCT30PW,112 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 8-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 1CH 8-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Obsolete
Packaging: Tube
| 74AHCT30D,118 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 8-INP 14SO
Operating Temperature: -40°C ~ 125°C
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Voltage - Supply: 4.5V ~ 5.5V
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO
Mounting Type: Surface Mount
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 1CH 8-INP 14SO
Operating Temperature: -40°C ~ 125°C
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Voltage - Supply: 4.5V ~ 5.5V
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO
Mounting Type: Surface Mount
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Active
Packaging: Tape & Reel (TR)
| 74AHCT30D,112 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 8-INP 14SO
Operating Temperature: -40°C ~ 125°C
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Voltage - Supply: 4.5V ~ 5.5V
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Obsolete
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 1CH 8-INP 14SO
Operating Temperature: -40°C ~ 125°C
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Logic Level - High: 2V
Logic Level - Low: 0.8V
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Max): 2µA
Voltage - Supply: 4.5V ~ 5.5V
Number of Inputs: 8
Number of Circuits: 1
Logic Type: NAND Gate
Part Status: Obsolete
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO
Mounting Type: Surface Mount
| HEF4070BT-Q100J |
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Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 4CH 2-INP 14SO
Logic Level - High: 3.5V ~ 11V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 3mA, 3mA
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE XOR 4CH 2-INP 14SO
Logic Level - High: 3.5V ~ 11V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 3mA, 3mA
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
| HEF4081BT-Q100J |
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14SO
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Logic Level - High: 3.5V ~ 11V
Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 40ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE AND 4CH 2-INP 14SO
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Logic Level - High: 3.5V ~ 11V
Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 40ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
| 74ALVC32D-Q100J |
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 4CH 2-INP 14SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 50pF
Logic Level - High: 1.7V ~ 2V
Logic Level - Low: 0.7V ~ 0.8V
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Max): 10µA
Voltage - Supply: 1.65V ~ 3.6V
Number of Inputs: 2
Number of Circuits: 4
Logic Type: OR Gate
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE OR 4CH 2-INP 14SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 50pF
Logic Level - High: 1.7V ~ 2V
Logic Level - Low: 0.7V ~ 0.8V
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Max): 10µA
Voltage - Supply: 1.65V ~ 3.6V
Number of Inputs: 2
Number of Circuits: 4
Logic Type: OR Gate
Part Status: Active
Packaging: Tape & Reel (TR)
| 74ALVC00D-Q100J |
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Logic Level - High: 1.7V ~ 2V
Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 4CH 2-INP 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Logic Level - High: 1.7V ~ 2V
Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
| 74HC240PW-Q100,118 |
|
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 6V 20TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Logic Type: Buffer, Inverting
Number of Elements: 2
Number of Bits per Element: 4
Output Type: 3-State
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP
Base Part Number: 74HC240
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC BUFFER INVERT 6V 20TSSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Logic Type: Buffer, Inverting
Number of Elements: 2
Number of Bits per Element: 4
Output Type: 3-State
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP
Base Part Number: 74HC240
| PDTC144WM,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V DFN1006-3
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Base Part Number: PDTC144
Supplier Device Package: SOT-883
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Power - Max: 250mW
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PREBIAS NPN 50V DFN1006-3
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Base Part Number: PDTC144
Supplier Device Package: SOT-883
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Power - Max: 250mW
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
auf Bestellung 190000 Stücke - Preis und Lieferfrist anzeigen
| PDTC144TM,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V DFN1006-3
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PREBIAS NPN 50V DFN1006-3
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 88936 Stücke - Preis und Lieferfrist anzeigen
| 1N4742A,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 1W DO41
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
auf Bestellung 25000 Stücke Description: DIODE ZENER 12V 1W DO41
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 150120 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4742A,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 1W DO41
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 1W DO41
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
auf Bestellung 25315 Stücke - Preis und Lieferfrist anzeigen
| 1N4742A,113 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 1W DO41
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 28231 Stücke Description: DIODE ZENER 12V 1W DO41
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 146889 Stücke - Preis und Lieferfrist anzeigen
|
| NZH4V7B,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW SOD123F
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 25 Ohms
auf Bestellung 3000 Stücke Description: DIODE ZENER 4.7V 500MW SOD123F
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 25 Ohms
Lieferzeit 21-28 Tag (e)
auf Bestellung 35075 Stücke - Preis und Lieferfrist anzeigen
|
| NZH4V7B,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 5903 Stücke Description: DIODE ZENER 4.7V 500MW SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 32172 Stücke - Preis und Lieferfrist anzeigen
|
| BZX585-C18,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 300MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 300MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
| NZX8V2B,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 500MW ALF2
Base Part Number: NZX8V2
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: ALF2
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 700nA @ 5V
Impedance (Max) (Zzt): 20 Ohms
auf Bestellung 4076 Stücke Description: DIODE ZENER 8.2V 500MW ALF2
Base Part Number: NZX8V2
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: ALF2
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 700nA @ 5V
Impedance (Max) (Zzt): 20 Ohms
Lieferzeit 21-28 Tag (e)
| NZX36A,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 36V 500MW ALF2
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Package / Case: DO-204AH, DO-35, Axial
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 140 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 36V 500MW ALF2
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Package / Case: DO-204AH, DO-35, Axial
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 140 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Tolerance: ±2%
Packaging: Tape & Box (TB)
auf Bestellung 18619 Stücke - Preis und Lieferfrist anzeigen
| NZX36A,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 36V 500MW ALF2
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 140 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
auf Bestellung 18619 Stücke Description: DIODE ZENER 36V 500MW ALF2
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 140 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Lieferzeit 21-28 Tag (e)
| NZH18C,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 40 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 40 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 10564 Stücke - Preis und Lieferfrist anzeigen
|
| NZH18C,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 40 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 4953 Stücke Description: DIODE ZENER 18V 500MW SOD123F
Current - Reverse Leakage @ Vr: 40 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123F
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8611 Stücke - Preis und Lieferfrist anzeigen
|
| BZX79-B3V9,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.9V 400MW ALF2
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
auf Bestellung 9849 Stücke Description: DIODE ZENER 3.9V 400MW ALF2
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
|
| BZX79-B3V6,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 400MW ALF2
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
auf Bestellung 3616 Stücke Description: DIODE ZENER 3.6V 400MW ALF2
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
|
| BZX79-B18,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 400MW ALF2
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 200°C
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 400MW ALF2
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 200°C
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
auf Bestellung 222 Stücke - Preis und Lieferfrist anzeigen
| BZX79-B18,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 400MW ALF2
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
auf Bestellung 202 Stücke Description: DIODE ZENER 18V 400MW ALF2
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 400 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
|
| NZX2V1B,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.1V 500MW ALF2
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.1 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
auf Bestellung 60000 Stücke Description: DIODE ZENER 2.1V 500MW ALF2
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.1 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Lieferzeit 21-28 Tag (e)
auf Bestellung 2275 Stücke - Preis und Lieferfrist anzeigen
|
| BZX84-B10,235 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 250MW TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 200nA @ 7V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 250mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-236AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 250MW TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 200nA @ 7V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 250mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-236AB
auf Bestellung 130000 Stücke - Preis und Lieferfrist anzeigen
| BZX84-B10,215 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 250MW TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 250MW TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 1440208 Stücke - Preis und Lieferfrist anzeigen
| BZX84-B33,215 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 250MW TO236AB
Base Part Number: BZX84-B33
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 250mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
auf Bestellung 18000 Stücke Description: DIODE ZENER 33V 250MW TO236AB
Base Part Number: BZX84-B33
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 250mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Lieferzeit 21-28 Tag (e)
auf Bestellung 34021 Stücke - Preis und Lieferfrist anzeigen
| BZX84-B33,215 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 250MW TO236AB
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Base Part Number: BZX84-B33
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 250mW
auf Bestellung 20072 Stücke Description: DIODE ZENER 33V 250MW TO236AB
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Base Part Number: BZX84-B33
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 250mW
Lieferzeit 21-28 Tag (e)
auf Bestellung 31949 Stücke - Preis und Lieferfrist anzeigen
| BZX384-C11,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke Description: DIODE ZENER 11V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 100434 Stücke - Preis und Lieferfrist anzeigen
|
| BZX384-C11,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 300MW SOD323
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 20 Ohms
auf Bestellung 9000 Stücke Description: DIODE ZENER 11V 300MW SOD323
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 20 Ohms
Lieferzeit 21-28 Tag (e)
auf Bestellung 97434 Stücke - Preis und Lieferfrist anzeigen
|
| BZX384-C11,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 300MW SOD323
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BZX384C11
Supplier Device Package: SOD-323
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 300mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 11V
auf Bestellung 3434 Stücke Description: DIODE ZENER 11V 300MW SOD323
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BZX384C11
Supplier Device Package: SOD-323
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 20 Ohms
Power - Max: 300mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 11V
Lieferzeit 21-28 Tag (e)
auf Bestellung 103000 Stücke - Preis und Lieferfrist anzeigen
| BZX384-C33,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 33V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 40856 Stücke - Preis und Lieferfrist anzeigen
| BZX384-C33,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 3998 Stücke Description: DIODE ZENER 33V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 36858 Stücke - Preis und Lieferfrist anzeigen
|
| PDZ5.1BGWJ |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 365MW SOD123
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Current - Reverse Leakage @ Vr: 2µA @ 1.5V
Base Part Number: PDZ5.1
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Impedance (Max) (Zzt): 60 Ohms
Power - Max: 365mW
Tolerance: ±2.35%
Voltage - Zener (Nom) (Vz): 5.1V
auf Bestellung 11681 Stücke Description: DIODE ZENER 5.1V 365MW SOD123
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Current - Reverse Leakage @ Vr: 2µA @ 1.5V
Base Part Number: PDZ5.1
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Impedance (Max) (Zzt): 60 Ohms
Power - Max: 365mW
Tolerance: ±2.35%
Voltage - Zener (Nom) (Vz): 5.1V
Lieferzeit 21-28 Tag (e)
auf Bestellung 27699 Stücke - Preis und Lieferfrist anzeigen
| BZX384-B3V6,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 300MW SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.6V 300MW SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 13876 Stücke - Preis und Lieferfrist anzeigen
| BZX384-B3V6,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 300MW SOD323
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Packaging: Cut Tape (CT)
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
auf Bestellung 91 Stücke Description: DIODE ZENER 3.6V 300MW SOD323
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Packaging: Cut Tape (CT)
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 13785 Stücke - Preis und Lieferfrist anzeigen
|
| BZX384-B13,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 39000 Stücke Description: DIODE ZENER 13V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 50469 Stücke - Preis und Lieferfrist anzeigen
|
| BZX384-B13,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 39788 Stücke Description: DIODE ZENER 13V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 49681 Stücke - Preis und Lieferfrist anzeigen
|
| BUK961R6-40E,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| BZX84J-C12,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 550MW SOD323F
Supplier Device Package: SOD-323F
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 550MW SOD323F
Supplier Device Package: SOD-323F
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 550 mW
Part Status: Active
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
| BZX585-C3V3,135 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 300MW SOD523
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 95 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Base Part Number: BZX585-C3V3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.3V 300MW SOD523
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 95 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Base Part Number: BZX585-C3V3
auf Bestellung 30181 Stücke - Preis und Lieferfrist anzeigen
| BZV55-B20,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 20V 500MW LLDS
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
auf Bestellung 27235 Stücke Description: DIODE ZENER 20V 500MW LLDS
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 48062 Stücke - Preis und Lieferfrist anzeigen
|
| BZV55-B3V3,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 500MW LLDS
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Power - Max: 500 mW
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.3V 500MW LLDS
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Power - Max: 500 mW
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 218395 Stücke - Preis und Lieferfrist anzeigen
| BZV55-B3V3,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 500MW LLDS
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
auf Bestellung 2360 Stücke Description: DIODE ZENER 3.3V 500MW LLDS
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 216035 Stücke - Preis und Lieferfrist anzeigen
|
| BUK662R5-30C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A D2PAK
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
auf Bestellung 2056 Stücke - Preis und Lieferfrist anzeigen
| PSMN4R4-80PS,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
auf Bestellung 15 Stücke Description: MOSFET N-CH 80V 100A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
|
| PSMN2R1-40PLQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 293W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9584pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 150A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 293W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9584pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
| PSMN2R6-60PSQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 150A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 326W (Tc)
Base Part Number: PSMN2R6
Manufacturer: Nexperia USA Inc.
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 7629pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 66 Stücke Description: MOSFET N-CH 60V 150A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 326W (Tc)
Base Part Number: PSMN2R6
Manufacturer: Nexperia USA Inc.
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 7629pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| BUK9506-75B,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Manufacturer: Nexperia USA Inc.
Input Capacitance (Ciss) (Max) @ Vds: 11693pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 75A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Manufacturer: Nexperia USA Inc.
Input Capacitance (Ciss) (Max) @ Vds: 11693pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
| PSMN5R0-100PS,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2585 Stücke Description: MOSFET N-CH 100V 120A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 4556 Stücke - Preis und Lieferfrist anzeigen
|
| BUK9E06-55A,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
| BUK7E5R2-100E,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A I2PAK
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
auf Bestellung 301 Stücke Description: MOSFET N-CH 100V 120A I2PAK
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 1473 Stücke - Preis und Lieferfrist anzeigen
| BUK753R8-80E,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 3744 Stücke - Preis und Lieferfrist anzeigen
| PSMN6R3-120ESQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 120V 70A I2PAK
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 207.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11384pF @ 60V
Power Dissipation (Max): 405W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
auf Bestellung 450 Stücke Description: MOSFET N-CH 120V 70A I2PAK
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 207.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11384pF @ 60V
Power Dissipation (Max): 405W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Lieferzeit 21-28 Tag (e)
| PSMN1R1-30EL,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
auf Bestellung 12580 Stücke - Preis und Lieferfrist anzeigen
| PSMN1R1-30PL,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A TO220AB
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 338W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 120A TO220AB
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 338W (Tc)
auf Bestellung 6020 Stücke - Preis und Lieferfrist anzeigen
| PSMN5R0-100ES,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A I2PAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
auf Bestellung 2669 Stücke Description: MOSFET N-CH 100V 120A I2PAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
Lieferzeit 21-28 Tag (e)
auf Bestellung 24970 Stücke - Preis und Lieferfrist anzeigen
| PSMN2R0-60ES,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 2 Stücke Description: MOSFET N-CH 60V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 23380 Stücke - Preis und Lieferfrist anzeigen
| BUK6E2R0-30C,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 229nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 14964pF @ 25V
Power Dissipation (Max): 306W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 229nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 14964pF @ 25V
Power Dissipation (Max): 306W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
| PSMN2R0-60PS,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A TO220AB
Base Part Number: PSMN2R0
Package / Case: TO-220-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Nexperia USA Inc.
Power Dissipation (Max): 338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9997pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
auf Bestellung 49 Stücke Description: MOSFET N-CH 60V 120A TO220AB
Base Part Number: PSMN2R0
Package / Case: TO-220-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Nexperia USA Inc.
Power Dissipation (Max): 338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9997pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Lieferzeit 21-28 Tag (e)
| BUK7905-40AIE,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220-5
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Current Sensing
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A TO220-5
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Current Sensing
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
auf Bestellung 497 Stücke - Preis und Lieferfrist anzeigen
| PHP191NQ06LT,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
auf Bestellung 4248 Stücke Description: MOSFET N-CH 55V 75A TO220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Lieferzeit 21-28 Tag (e)
|
| BUK6E4R0-75C,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 120A I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 120A I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
auf Bestellung 19992 Stücke - Preis und Lieferfrist anzeigen
| BUK6217-55C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 44A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 44A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 3361 Stücke - Preis und Lieferfrist anzeigen
| BUK6217-55C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 44A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
auf Bestellung 123 Stücke Description: MOSFET N-CH 55V 44A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 3238 Stücke - Preis und Lieferfrist anzeigen
| BUK6217-55C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 3238 Stücke Description: MOSFET N-CH 55V 44A DPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33.8nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Lieferzeit 21-28 Tag (e)
auf Bestellung 123 Stücke - Preis und Lieferfrist anzeigen
| BUK9Y22-30B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 37.7A LFPAK56
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Last Time Buy
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 59.4W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 37.7A LFPAK56
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Last Time Buy
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 59.4W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
| PSMN2R0-30YL,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 25693 Stücke - Preis und Lieferfrist anzeigen
| PSMN8R0-40BS,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 3200 Stücke Description: MOSFET N-CH 40V 77A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7976 Stücke - Preis und Lieferfrist anzeigen
|
| PML340SN,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 220V 7.3A DFN3333-8
Drain to Source Voltage (Vdss): 220V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 386mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 656pF @ 30V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN3333-8
Package / Case: 8-VDFN Exposed Pad
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 220V 7.3A DFN3333-8
Drain to Source Voltage (Vdss): 220V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 386mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 656pF @ 30V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN3333-8
Package / Case: 8-VDFN Exposed Pad
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
| PSMN034-100BS,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
auf Bestellung 5600 Stücke Description: MOSFET N-CH 100V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6257 Stücke - Preis und Lieferfrist anzeigen
|
| PSMN034-100BS,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 32A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
auf Bestellung 6257 Stücke Description: MOSFET N-CH 100V 32A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 5600 Stücke - Preis und Lieferfrist anzeigen
|
| PSMN020-100YS,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 43A LFPAK56
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 43A LFPAK56
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 14538 Stücke - Preis und Lieferfrist anzeigen
| PML260SN,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 8.8A DFN3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 2.6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN3333-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 8.8A DFN3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 2.6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN3333-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V
| BUK9225-55A,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 43A DPAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 43A DPAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| BUK9Y53-100B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 23A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 6193 Stücke - Preis und Lieferfrist anzeigen
| BUK7Y10-30B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 67A LFPAK56
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 67A LFPAK56
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 1306 Stücke - Preis und Lieferfrist anzeigen
| BUK7Y53-100B,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 24.8A LFPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1467pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 24.8A LFPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1467pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 517 Stücke - Preis und Lieferfrist anzeigen
| PSMN1R2-25YLC,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 100A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
auf Bestellung 11592 Stücke - Preis und Lieferfrist anzeigen
| PSMN1R2-25YLC,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4173pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
auf Bestellung 11592 Stücke Description: MOSFET N-CH 25V 100A LFPAK
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4173pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Lieferzeit 21-28 Tag (e)
| PHB66NQ03LT,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 800 Stücke Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
auf Bestellung 3276 Stücke - Preis und Lieferfrist anzeigen
|
| PHB66NQ03LT,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1636 Stücke Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
auf Bestellung 2440 Stücke - Preis und Lieferfrist anzeigen
|
| BUK6210-55C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 13960 Stücke - Preis und Lieferfrist anzeigen
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