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PDTA123JTVL PDTA123JTVL Nexperia USA Inc. PDTA123J_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTC144ETVL PDTC144ETVL Nexperia USA Inc. PDTC144ET.pdf Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PESD24VF1BLYL PESD24VF1BLYL Nexperia USA Inc. PESD24VF1BL.pdf Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PMEG2002AESF,315 PMEG2002AESF,315 Nexperia USA Inc. PMEG2002AESF.pdf Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
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PMEG45A10EPDAZ PMEG45A10EPDAZ Nexperia USA Inc. PMEG45A10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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PMEG45U10EPDZ PMEG45U10EPDZ Nexperia USA Inc. PMEG45U10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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4500+0.67 EUR
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PMPB85ENEAX PMPB85ENEAX Nexperia USA Inc. PMPB85ENEA.pdf Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
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PMPB95ENEAX PMPB95ENEAX Nexperia USA Inc. PMPB95ENEA.pdf Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
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PMXB56ENZ PMXB56ENZ Nexperia USA Inc. PMXB56EN.pdf Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN0R9-30YLDX PSMN0R9-30YLDX Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
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PSMN1R0-30YLDX PSMN1R0-30YLDX Nexperia USA Inc. PSMN1R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
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PSMN1R2-30YLDX PSMN1R2-30YLDX Nexperia USA Inc. PSMN1R2-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
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PSMN1R4-30YLDX PSMN1R4-30YLDX Nexperia USA Inc. PSMN1R4-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN2R1-60CSJ Nexperia USA Inc. Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVS10VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPAZ Nexperia USA Inc. PTVS18VU1UPA.pdf Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PTVS26VU1UPAZ PTVS26VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PTVS7V5U1UPAZ PTVS7V5U1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PUSB2X4DH PUSB2X4DH Nexperia USA Inc. PUSB2X4D.pdf Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PUSB2X4YH PUSB2X4YH Nexperia USA Inc. PUSB2X4Y.pdf Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PTVS7V5U1UPAZ PTVS7V5U1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVS10VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 10VWM 17VC 3HUSON
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: 3-HUSON (2x2)
Voltage - Reverse Standoff (Typ): 10V (Max)
Current - Peak Pulse (10/1000µs): 17.6A
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPAZ Nexperia USA Inc. PTVS18VU1UPA.pdf Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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19+1.15 EUR
30+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
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PMEG45A10EPDAZ PMEG45A10EPDAZ Nexperia USA Inc. PMEG45A10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.69 EUR
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PMEG45U10EPDZ PMEG45U10EPDZ Nexperia USA Inc. PMEG45U10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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8+2.7 EUR
13+1.71 EUR
50+1.27 EUR
100+1.13 EUR
500+0.83 EUR
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BUK7K18-40EX BUK7K18-40EX Nexperia USA Inc. BUK7K18-40E.pdf Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 38W
Technology: MOSFET (Metal Oxide)
auf Bestellung 2684 Stücke:
Lieferzeit 10-14 Tag (e)
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BUK7Y19-100EX BUK7Y19-100EX Nexperia USA Inc. BUK7Y19-100E.pdf Description: MOSFET N-CH 100V LFPAK56-SO8
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2552 Stücke:
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BUK9Y113-100E,115 BUK9Y113-100E,115 Nexperia USA Inc. BUK9Y113-100E.pdf Description: MOSFET N-CH 100V 12A LFPAK56
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3306 Stücke:
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BUK9Y19-100E,115 BUK9Y19-100E,115 Nexperia USA Inc. BUK9Y19-100E.pdf Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 250 Stücke:
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PSMN0R9-30YLDX PSMN0R9-30YLDX Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 16037 Stücke:
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PSMN1R0-30YLDX PSMN1R0-30YLDX Nexperia USA Inc. PSMN1R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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PSMN1R0-40YLDX PSMN1R0-40YLDX Nexperia USA Inc. PSMN1R0-40YLD.pdf Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
auf Bestellung 569 Stücke:
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PSMN1R0-40YLDX PSMN1R0-40YLDX Nexperia USA Inc. PSMN1R0-40YLD.pdf Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
Produkt ist nicht verfügbar
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PSMN1R4-30YLDX PSMN1R4-30YLDX Nexperia USA Inc. PSMN1R4-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
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PSMN1R4-40YLDX PSMN1R4-40YLDX Nexperia USA Inc. PSMN1R4-40YLD.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
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PSMN1R4-40YLDX PSMN1R4-40YLDX Nexperia USA Inc. PSMN1R4-40YLD.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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2N7002P,235 2N7002P,235 Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28682 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
92+0.23 EUR
129+0.17 EUR
148+0.14 EUR
500+0.1 EUR
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BAT54W,135 BAT54W,135 Nexperia USA Inc. BAT54W.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 17917 Stücke:
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500+0.088 EUR
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BAV23,235 BAV23,235 Nexperia USA Inc. BAV23.pdf Description: DIODE ARR GP 200V 225MA SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-143B
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BAV70,235 BAV70,235 Nexperia USA Inc. BAV70.pdf Description: DIODE ARR GP 100V 215MA TO-236AB
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BAV70S,135 BAV70S,135 Nexperia USA Inc. BAV70S.pdf Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 6323 Stücke:
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35+0.61 EUR
57+0.37 EUR
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100+0.24 EUR
500+0.17 EUR
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BAW56,235 BAW56,235 Nexperia USA Inc. BAW56.pdf Description: DIODE ARRAY GP 90V 215MA TO236AB
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BC807-40,235 BC807-40,235 Nexperia USA Inc. BC807_SER.pdf Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC846B,235 BC846B,235 Nexperia USA Inc. BC846X_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC847BPN,135 BC847BPN,135 Nexperia USA Inc. BC847BPN.pdf Description: TRANS NPN/PNP 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.36 EUR
95+0.23 EUR
153+0.14 EUR
500+0.1 EUR
Mindestbestellmenge: 59 Stücke
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BC847BS,135 BC847BS,135 Nexperia USA Inc. BC847BS.pdf Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
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BZV55-C5V6,135 BZV55-C5V6,135 Nexperia USA Inc. BZV55_SER.pdf Description: DIODE ZENER 5.6V 500MW LLDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 33153 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
106+0.2 EUR
148+0.14 EUR
171+0.12 EUR
500+0.089 EUR
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BZX84-C4V7,235 BZX84-C4V7,235 Nexperia USA Inc. BZX84_SER.pdf Description: DIODE ZENER 4.7V 250MW TO236AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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PMBT3906,235 PMBT3906,235 Nexperia USA Inc. PMBT3906.pdf Description: TRANS PNP 40V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
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PMBT4401,235 PMBT4401,235 Nexperia USA Inc. PMBT4401.pdf Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q100
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74AHC1G17GVH 74AHC1G17GVH Nexperia USA Inc. 74AHC_AHCT1G17.pdf Description: IC BUFF 2V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Part Status: Active
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74AHC1G17GWH 74AHC1G17GWH Nexperia USA Inc. 74AHC_AHCT1G17.pdf Description: IC BUFF 2V/5.5V 5-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
Part Status: Active
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74AHCT1G17GVH 74AHCT1G17GVH Nexperia USA Inc. 74AHC_AHCT1G17.pdf Description: IC BUFF 4.5V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
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74AHCT1G17GWH 74AHCT1G17GWH Nexperia USA Inc. 74AHC_AHCT1G17.pdf Description: IC BUFF 4.5V/5.5V 5-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
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74ALVC00BQ-Q100X 74ALVC00BQ-Q100X Nexperia USA Inc. 74ALVC00_Q100.pdf Description: IC GATE NAND 4CH 2-INP 14DHVQFN
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74ALVC32BQ-Q100X 74ALVC32BQ-Q100X Nexperia USA Inc. 74ALVC32_Q100.pdf Description: IC GATE OR 4CH 2-INP 14DHVQFN
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74AUP1G04GW-Q100H 74AUP1G04GW-Q100H Nexperia USA Inc. 74AUP1G04_Q100.pdf Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Qualification: AEC-Q100
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74AUP1T98GW-Q100H 74AUP1T98GW-Q100H Nexperia USA Inc. 74AUP1T98_Q100.pdf Description: IC LP CONFIG GATE V-XLATR
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74HC2G04GV-Q100H 74HC2G04GV-Q100H Nexperia USA Inc. 74HC_HCT2G04_Q100.pdf Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74HC2G04GW-Q100H 74HC2G04GW-Q100H Nexperia USA Inc. 74HC_HCT2G04_Q100.pdf Description: IC INVERT SCHMITT 2CH 2IN 6TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 6-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PDTA123JTVL PDTA123J_SER.pdf
PDTA123JTVL
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTC144ETVL PDTC144ET.pdf
PDTC144ETVL
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PESD24VF1BLYL PESD24VF1BL.pdf
PESD24VF1BLYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMEG2002AESF,315 PMEG2002AESF.pdf
PMEG2002AESF,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Produkt ist nicht verfügbar
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PMEG45A10EPDAZ PMEG45A10EPD.pdf
PMEG45A10EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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PMEG45U10EPDZ PMEG45U10EPD.pdf
PMEG45U10EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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PMPB85ENEAX PMPB85ENEA.pdf
PMPB85ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
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PMPB95ENEAX PMPB95ENEA.pdf
PMPB95ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMXB56ENZ PMXB56EN.pdf
PMXB56ENZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
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1500+1.4 EUR
4500+1.29 EUR
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PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
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PSMN1R2-30YLDX PSMN1R2-30YLD.pdf
PSMN1R2-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
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1500+1.09 EUR
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PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
PSMN1R4-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN2R1-60CSJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.26 EUR
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PTVS26VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS26VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
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PTVS7V5U1UPAZ PTVSXU1UPA_SER.pdf
PTVS7V5U1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PUSB2X4DH PUSB2X4D.pdf
PUSB2X4DH
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PUSB2X4YH PUSB2X4Y.pdf
PUSB2X4YH
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PTVS7V5U1UPAZ PTVSXU1UPA_SER.pdf
PTVS7V5U1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC 3HUSON
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: 3-HUSON (2x2)
Voltage - Reverse Standoff (Typ): 10V (Max)
Current - Peak Pulse (10/1000µs): 17.6A
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7844 Stücke:
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AnzahlPrivatkunde
19+1.15 EUR
30+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
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PMEG45A10EPDAZ PMEG45A10EPD.pdf
PMEG45A10EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 7900 Stücke:
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9+2.57 EUR
13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.69 EUR
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PMEG45U10EPDZ PMEG45U10EPD.pdf
PMEG45U10EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
auf Bestellung 13579 Stücke:
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8+2.7 EUR
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50+1.27 EUR
100+1.13 EUR
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BUK7K18-40EX BUK7K18-40E.pdf
BUK7K18-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 38W
Technology: MOSFET (Metal Oxide)
auf Bestellung 2684 Stücke:
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9+2.59 EUR
13+1.63 EUR
50+1.21 EUR
100+1.08 EUR
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BUK7Y19-100EX BUK7Y19-100E.pdf
BUK7Y19-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 169W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2552 Stücke:
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6+4 EUR
10+2.53 EUR
50+1.9 EUR
100+1.7 EUR
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BUK9Y113-100E,115 BUK9Y113-100E.pdf
BUK9Y113-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3306 Stücke:
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AnzahlPrivatkunde
11+1.96 EUR
18+1.23 EUR
50+0.9 EUR
100+0.8 EUR
500+0.62 EUR
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BUK9Y19-100E,115 BUK9Y19-100E.pdf
BUK9Y19-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
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7+3.14 EUR
11+1.99 EUR
50+1.49 EUR
100+1.32 EUR
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 16037 Stücke:
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5+4.61 EUR
10+2.95 EUR
50+2.24 EUR
100+2 EUR
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PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.32 EUR
50+1.75 EUR
100+1.56 EUR
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PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
PSMN1R0-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.84 EUR
10+3.12 EUR
50+2.37 EUR
100+2.13 EUR
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PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
PSMN1R0-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
Produkt ist nicht verfügbar
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PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
PSMN1R4-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
auf Bestellung 40 Stücke:
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AnzahlPrivatkunde
8+2.87 EUR
12+1.82 EUR
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PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
PSMN1R4-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
auf Bestellung 711 Stücke:
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AnzahlPrivatkunde
6+4.13 EUR
10+2.63 EUR
50+1.99 EUR
100+1.78 EUR
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PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
PSMN1R4-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
Produkt ist nicht verfügbar
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2N7002P,235 2N7002P.pdf
2N7002P,235
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
129+0.17 EUR
148+0.14 EUR
500+0.1 EUR
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BAT54W,135 BAT54W.pdf
BAT54W,135
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 17917 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
107+0.2 EUR
151+0.14 EUR
174+0.12 EUR
500+0.088 EUR
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BAV23,235 BAV23.pdf
BAV23,235
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 200V 225MA SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-143B
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BAV70,235 BAV70.pdf
BAV70,235
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO-236AB
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BAV70S,135 BAV70S.pdf
BAV70S,135
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 6323 Stücke:
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AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
79+0.26 EUR
100+0.24 EUR
500+0.17 EUR
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BAW56,235 BAW56.pdf
BAW56,235
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 90V 215MA TO236AB
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BC807-40,235 BC807_SER.pdf
BC807-40,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC846B,235 BC846X_SER.pdf
BC846B,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC847BPN,135 BC847BPN.pdf
BC847BPN,135
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
95+0.23 EUR
153+0.14 EUR
500+0.1 EUR
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BC847BS,135 BC847BS.pdf
BC847BS,135
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 17 Stücke:
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BZV55-C5V6,135 BZV55_SER.pdf
BZV55-C5V6,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 500MW LLDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 33153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
106+0.2 EUR
148+0.14 EUR
171+0.12 EUR
500+0.089 EUR
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BZX84-C4V7,235 BZX84_SER.pdf
BZX84-C4V7,235
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 250MW TO236AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Produkt ist nicht verfügbar
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PMBT3906,235 PMBT3906.pdf
PMBT3906,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 34222 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
145+0.14 EUR
237+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
2000+0.049 EUR
5000+0.042 EUR
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PMBT4401,235 PMBT4401.pdf
PMBT4401,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q100
auf Bestellung 11610 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
134+0.15 EUR
217+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
2000+0.054 EUR
5000+0.045 EUR
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74AHC1G17GVH 74AHC_AHCT1G17.pdf
74AHC1G17GVH
Hersteller: Nexperia USA Inc.
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.09 EUR
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74AHC1G17GWH 74AHC_AHCT1G17.pdf
74AHC1G17GWH
Hersteller: Nexperia USA Inc.
Description: IC BUFF 2V/5.5V 5-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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74AHCT1G17GVH 74AHC_AHCT1G17.pdf
74AHCT1G17GVH
Hersteller: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Produkt ist nicht verfügbar
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74AHCT1G17GWH 74AHC_AHCT1G17.pdf
74AHCT1G17GWH
Hersteller: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V 5-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-TSSOP
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.071 EUR
6000+0.069 EUR
9000+0.068 EUR
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74ALVC00BQ-Q100X 74ALVC00_Q100.pdf
74ALVC00BQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Produkt ist nicht verfügbar
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74ALVC32BQ-Q100X 74ALVC32_Q100.pdf
74ALVC32BQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 4CH 2-INP 14DHVQFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74AUP1G04GW-Q100H 74AUP1G04_Q100.pdf
74AUP1G04GW-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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74AUP1T98GW-Q100H 74AUP1T98_Q100.pdf
74AUP1T98GW-Q100H
Hersteller: Nexperia USA Inc.
Description: IC LP CONFIG GATE V-XLATR
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74HC2G04GV-Q100H 74HC_HCT2G04_Q100.pdf
74HC2G04GV-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74HC2G04GW-Q100H 74HC_HCT2G04_Q100.pdf
74HC2G04GW-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERT SCHMITT 2CH 2IN 6TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 6-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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