Die Produkte nexperia usa inc.

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf Nexperia USA Inc. Description: MOSFET N-CH 25V 100A LFPAK
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4173pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 11592 Stücke
Lieferzeit 21-28 Tag (e)
PHB66NQ03LT,118 PHB66NQ03LT,118 PHB,PHD66NQ03LT.pdf Nexperia USA Inc. Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
800+ 1.8 EUR
Nexperia USA Inc. Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1636 Stücke
Lieferzeit 21-28 Tag (e)
9+ 3.12 EUR
10+ 2.79 EUR
100+ 2.18 EUR
BUK6210-55C,118 BUK6210-55C,118 BUK6210-55C.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7208-40B,118 BUK7208-40B,118 BUK7208-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2493 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN7R6-60BS,118 PSMN7R6-60BS,118 PSMN7R6-60BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 92A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN012-80BS,118 PSMN012-80BS,118 PSMN012-80BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 74A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN102-200Y,115 PSMN102-200Y,115 PSMN102-200Y.pdf Nexperia USA Inc. Description: MOSFET N-CH 200V 21.5A LFPAK56
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BCP53-16TX BCP53-16TX BCP53_BCX53_BC53PA.pdf Nexperia USA Inc. Description: TRANS PNP 80V 1A SOT223
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK624R5-30C,118 BUK624R5-30C,118 BUK624R5-30C.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 90A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 25V
Power Dissipation (Max): 158W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7Y07-30B,115 BUK7Y07-30B,115 BUK7Y07-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A LFPAK56
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1773pF @ 25V
Power Dissipation (Max): 105W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7Y08-40B,115 BUK7Y08-40B,115 BUK7Y08-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9616-75B,118 BUK9616-75B,118 BUK9616-75B.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 67A D2PAK
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 75V 67A D2PAK
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 222 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.37 EUR
10+ 3.91 EUR
100+ 3.14 EUR
PHB21N06LT,118 PHB21N06LT,118 PHB_PHD_PHP21N06LT.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 19A D2PAK
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Technology: MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 56W (Tc)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN017-30PL,127 PSMN017-30PL,127 PSMN017-30PL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 32A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 19196 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.8 EUR
10+ 3.39 EUR
100+ 2.64 EUR
500+ 2.18 EUR
1000+ 1.72 EUR
2000+ 1.61 EUR
5000+ 1.57 EUR
PSMN017-30EL,127 PSMN017-30EL,127 PSMN017-30EL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 32A I2PAK
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V
Power Dissipation (Max): 47W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: PSMN017
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2921 Stücke
Lieferzeit 21-28 Tag (e)
BUK7575-55A,127 BUK7575-55A,127 BUK7575-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 20.3A TO220AB
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 483pF @ 25V
Power Dissipation (Max): 62W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN034-100PS,127 PSMN034-100PS,127 PSMN034-100PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1015 Stücke
Lieferzeit 21-28 Tag (e)
PSMN027-100PS,127 PSMN027-100PS,127 PSMN027-100PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 37A TO220AB
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN4R3-30PL,127 PSMN4R3-30PL,127 PSMN4R3-30PL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 12 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2329 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.16 EUR
10+ 3.73 EUR
100+ 3 EUR
500+ 2.46 EUR
1000+ 2.04 EUR
2000+ 1.92 EUR
BUK7575-100A,127 BUK7575-100A,127 BUK7575-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 23A TO220AB
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Power Dissipation (Max): 99W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN027-100XS,127 PSMN027-100XS,127 PSMN027-100XS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 23.4A TO220F
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41.1W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PHP20N06T,127 PHP20N06T,127 PHP20N06T.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 20.3A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4722 Stücke
Lieferzeit 21-28 Tag (e)
9+ 3.2 EUR
10+ 2.84 EUR
100+ 2.21 EUR
500+ 1.83 EUR
1000+ 1.44 EUR
2000+ 1.35 EUR
PHP18NQ11T,127 PHP18NQ11T,127 PHP18NQ11T.pdf Nexperia USA Inc. Description: MOSFET N-CH 110V 18A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN016-100PS,127 PSMN016-100PS,127 PSMN016-100PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 57A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PHP29N08T,127 PHP29N08T,127 PHP29N08T.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 27A TO220AB
Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 11V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 2mA
Power Dissipation (Max): 88W (Tc)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4901 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.64 EUR
10+ 3.25 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.65 EUR
2000+ 1.54 EUR
PSMN4R5-40PS,127 PSMN4R5-40PS,127 PSMN4R5-40PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 888 Stücke
Lieferzeit 21-28 Tag (e)
BUK7513-75B,127 BUK7513-75B,127 Nexperia USA Inc. Description: MOSFET N-CH 75V 75A TO220AB
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7526-100B,127 BUK7526-100B,127 BUK7526-100B.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 49A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2891 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9540-100A,127 BUK9540-100A,127 BUK95,9640-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 39A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN2R7-30PL,127 PSMN2R7-30PL,127 PSMN2R7-30PL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 12 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 56 Stücke
Lieferzeit 21-28 Tag (e)
BUK754R0-40C,127 BUK754R0-40C,127 BUK754R0-40C.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A TO220AB
Power Dissipation (Max): 203W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5708pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK954R8-60E,127 BUK954R8-60E,127 BUK954R8-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7E3R1-40E,127 BUK7E3R1-40E,127 BUK7E3R1-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A I2PAK
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 234W (Tc)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 221 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.52 EUR
10+ 4.07 EUR
100+ 3.27 EUR
PSMN5R0-80PS,127 PSMN5R0-80PS,127 PSMN5R0-80PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 100A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6793 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 PSMN0R9-25YLC.pdf Nexperia USA Inc. Description: MOSFET N-CH 25V 100A LFPAK56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZX84-B22,215 BZX84-B22,215 BZX84_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 22V 250MW SOT23
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 15.4V
Impedance (Max) (Zzt): 55 Ohms
Power - Max: 250mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 22V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BZX84B22
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 29515 Stücke
Lieferzeit 21-28 Tag (e)
BC846BPN,115 BC846BPN,115 BC846BPN.pdf Nexperia USA Inc. Description: TRANS NPN/PNP 65V 0.1A 6TSSOP
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN, PNP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Part Number: BC846BP
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 8724 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: TRANS NPN/PNP 65V 0.1A 6TSSOP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 30177 Stücke
Lieferzeit 21-28 Tag (e)
38+ 0.7 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
Nexperia USA Inc. Description: TRANS NPN/PNP 65V 0.1A 6TSSOP
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSSOP
Part Status: Active
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 30177 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.13 EUR
6000+ 0.11 EUR
15000+ 0.094 EUR
30000+ 0.088 EUR
BC846BS,115 BC846BS,115 BC846BS.pdf Nexperia USA Inc. Description: Description: TRANS 2NPN 65V 0.1A 6TSSOP
Operating Temperature: 150°C (TJ)
Frequency - Transition: 100MHz
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Base Part Number: BC846BS
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Operating Temperature: 150°C (TJ)
Frequency - Transition: 100MHz
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Base Part Number: BC846BS
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: TRANS 2NPN 65V 0.1A 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2765 Stücke
Lieferzeit 21-28 Tag (e)
38+ 0.7 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
BC846BS,135 BC846BS,135 BC846BS.pdf Nexperia USA Inc. Description: TRANS 2NPN 65V 0.1A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
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74AUP1G07GW-Q100H 74AUP1G07_Q100.pdf Nexperia USA Inc. Description: IC BUFFER NON-INVERT 3.6V 5TSSOP
Output Type: Open Drain
Number of Bits per Element: 1
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74AUP1G07
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
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PESD5V0X1UALD,315 PESD5V0X1UALD,315 PESD5V0X1UALD.pdf Nexperia USA Inc. Description: TVS DIODE 5VWM 9VC DFN1006D-2
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: DFN1006D-2
Voltage - Reverse Standoff (Typ): 5V (Max)
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Nexperia USA Inc. Description: TVS DIODE 5VWM 9VC DFN1006D-2
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: DFN1006D-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
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auf Bestellung 8800 Stücke
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23+ 1.17 EUR
30+ 0.87 EUR
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IP4234CZ6,115 IP4234CZ6,115 IP4234CZ6.pdf Nexperia USA Inc. Description: TVS DIODE 5.5VWM 6TSOP
Part Status: Active
Power Line Protection: Yes
Power - Peak Pulse: 100W
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 5.5V
Capacitance @ Frequency: 2.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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auf Bestellung 24000 Stücke
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PESD5V0U4BF,115 PESD5V0U4BF,115 PESD5V0U4BF_PESD5V0U4BW.pdf Nexperia USA Inc. Description: TVS DIODE 5VWM 6XSON SOT886
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 2.9pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Voltage - Breakdown (Min): 5.5V
Voltage - Reverse Standoff (Typ): 5V (Max)
Bidirectional Channels: 4
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
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PEMH10,115 PEMH10,115 PEMH10_PUMH10.pdf Nexperia USA Inc. Description: TRANS 2NPN PREBIAS 0.3W SOT666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: P*MH10
Supplier Device Package: SOT-666
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74LVC2G04GN,132 74LVC2G04GN,132 74LVC2G04.pdf Nexperia USA Inc. Description: IC INVERTER 2CH 2-INP 6XSON
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 4 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 6-XSON (0.9x1)
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
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PMN30UNEX PMN30UNEX PMN30UNE.pdf Nexperia USA Inc. Description: MOSFET N-CH 20V 4.8A 6TSOP
Manufacturer: Nexperia USA Inc.
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 558pF @ 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Base Part Number: PMN30
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PMN52XPX PMN52XPX PMN52XP.pdf Nexperia USA Inc. Description: MOSFET P-CH 20V 3.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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auf Bestellung 2982 Stücke
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32+ 0.82 EUR
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BZV55-C3V3,135 BZV55-C3V3,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 3.3V 500MW LLDS
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 95 Ohms
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
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auf Bestellung 7135 Stücke
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50+ 0.53 EUR
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500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.093 EUR
BC857BV,115 BC857BV,115 BC857BV.pdf Nexperia USA Inc. Description: TRANS 2PNP 45V 0.1A SOT666
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 100MHz
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
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BZB84-B20,215 BZB84-B20,215 BZB84_SER.pdf Nexperia USA Inc. Description: DIODE ZENER ARRAY 20V SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
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BZB984-C3V6,115 BZB984-C3V6,115 BZB984_SERIES.pdf Nexperia USA Inc. Description: DIODE ZENER ARRAY 3.6V SOT663
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 265 mW
Part Status: Active
Supplier Device Package: SOT-663
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SOT-663
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BC846DS,115 BC846DS,115 BC846DS.pdf Nexperia USA Inc. Description: TRANS 2NPN 65V 0.1A 6TSOP
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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PUMT1,115 PUMT1,115 PHGLS19727-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: TRANS 2PNP 40V 0.1A 6TSSOP
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
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auf Bestellung 156 Stücke
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PUMZ2,115 PUMZ2,115 PIMZ2_PUMZ2.pdf Nexperia USA Inc. Description: TRANS NPN/PNP 50V 0.15A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz, 190MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
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500+ 0.25 EUR
1000+ 0.17 EUR
PUMH16,115 PUMH16,115 PEMH16_PUMH16.pdf Nexperia USA Inc. Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Manufacturer: Nexperia USA Inc.
Packaging: Cut Tape (CT)
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Part Number: PUMH16
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PUMH18,115 PUMH18,115 PEMH18_PUMH18.pdf Nexperia USA Inc. Description: TRANS 2NPN PREBIAS 0.3W 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
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PUMH2,115 PUMH2,115 PEMH2_PUMH2.pdf Nexperia USA Inc. Description: TRANS PREBIAS 2NPN 50V 6TSSOP
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
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PUMH20,115 PUMH20,115 PEMH20_PUMH20.pdf Nexperia USA Inc. Description: TRANS 2NPN PREBIAS 0.3W 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
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PEMD9,115 PEMD9,115 PEMD9_PUMD9.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP SOT666
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-666
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
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PUMH13,115 PUMH13,115 PEMH13_PUMH13.pdf Nexperia USA Inc. Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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35+ 0.75 EUR
43+ 0.62 EUR
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500+ 0.21 EUR
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PUMD15,115 PUMD15,115 PEMD15_PUMD15.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP 6TSSOP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
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PUMD4,115 PUMD4,115 PEMD4_PUMD4.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
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PUMD48,125 PUMD48,125 PEMD48_PUMD48.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Packaging: Bulk
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PUMD48,115 PUMD48,115 PEMD48_PUMD48.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
PUMH17,115 PUMH17,115 PEMH17_PUMH17.pdf Nexperia USA Inc. Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
39+ 0.68 EUR
47+ 0.55 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
PEMH10,115 PEMH10,115 PEMH10_PUMH10.pdf Nexperia USA Inc. Description: TRANS PREBIAS 2NPN 50V SOT666
Part Status: Active
Supplier Device Package: SOT-666
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PEMH9,115 PEMH9,115 PEMH9_PIMH9_PUMH9.pdf Nexperia USA Inc. Description: TRANS 2NPN PREBIAS 0.3W SOT666
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SOT-666
Current - Collector (Ic) (Max): 100mA
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74LVC1G97GW,125 74LVC1G97GW,125 PHGLS30451-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: IC GATE MULTIFUNCTION 6TSSOP
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-TSSOP
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55-C2V7,115 BZV55-C2V7,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 2.7V 500MW LLDS
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 39148 Stücke
Lieferzeit 21-28 Tag (e)
44+ 0.6 EUR
50+ 0.53 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
BZV55-C2V7,135 BZV55-C2V7,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 2.7V 500MW LLDS
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Voltage - Zener (Nom) (Vz): 2.7 V
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 100 Ohms
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55-C2V7,115 BZV55-C2V7,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 2.7V 500MW LLDS
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 100 Ohms
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 35000 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 0.1 EUR
5000+ 0.093 EUR
12500+ 0.081 EUR
25000+ 0.073 EUR
BZV55-C7V5,135 BZV55-C7V5,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 7.5V 500MW LLDS
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: LLDS; MiniMelf
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55-C30,115 BZV55-C30,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 30V 500MW LLDS
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12500 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 0.1 EUR
5000+ 0.093 EUR
12500+ 0.081 EUR
BZV55-C4V7,135 BZV55-C4V7,135 BZV55_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 4.7V 500MW SOD80C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: LLDS; MiniMelf
Operating Temperature: -65°C ~ 200°C
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 3µA @ 2V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7399 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: DIODE ZENER 4.7V 500MW LLDS
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 20687 Stücke
Lieferzeit 21-28 Tag (e)
44+ 0.6 EUR
50+ 0.53 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.093 EUR
Nexperia USA Inc. Description: DIODE ZENER 4.7V 500MW LLDS
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
10000+ 0.081 EUR
BZV55-C12,115 BZV55-C12,115 BZV55_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 12V 500MW SOD80C
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 500mW
Tolerance: ±5%
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Supplier Device Package: LLDS; MiniMelf
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -65°C ~ 200°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 13770 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: DIODE ZENER 12V 500MW LLDS
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: LLDS; MiniMelf
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 0.1 EUR
5000+ 0.093 EUR
12500+ 0.081 EUR
PDTA124XT,215 PDTA124XT,215 PDTA124X_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS PNP 50V TO236AB
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA144WT,215 PDTA144WT,215 PDTA144W_SERIES.pdf Nexperia USA Inc. Description: TRANS PREBIAS PNP 50V TO236AB
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTC123ET,215 PDTC123ET,215 PDTC123E_SERIES.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 50V TO236AB
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 22 Stücke
Lieferzeit 21-28 Tag (e)
PDTC123EU,115 PDTC123EU,115 PDTC123E_SERIES.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 50V SOT323
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 18443 Stücke
Lieferzeit 21-28 Tag (e)
50+ 0.52 EUR
56+ 0.47 EUR
102+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
PDTC123JU,115 PDTC123JU,115 PHGLS24124-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 86030 Stücke
Lieferzeit 21-28 Tag (e)
56+ 0.47 EUR
62+ 0.42 EUR
113+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.097 EUR
PDTC123YU,115 PDTC123YU,115 PDTC123Y_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 200MW SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
PESD5V0F5UV115 PESD5V0F5UV115 PESD5V0F5UV.pdf Nexperia USA Inc. Description: TVS DIODE
Manufacturer: Rochester Electronics, LLC
Packaging: Bulk
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 128752 Stücke
Lieferzeit 21-28 Tag (e)
PDTC143XT,215 PDTC143XT,215 PDTC143X_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 50V TO236AB
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTC144WT,215 PDTC144WT,215 PDTC144W_SERIES.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 50V TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84W-C33F BZX84W-C33F BZX84W_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 33V 275MW SOT323
Base Part Number: BZX84W-C33
Manufacturer: Nexperia USA Inc.
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 275mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
BZV55-C33,115 BZV55-C33,115 BZV55_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 33V 500MW SOD80C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Base Part Number: BZV55C33
Supplier Device Package: LLDS; MiniMelf
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12209 Stücke
Lieferzeit 21-28 Tag (e)
PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4173pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
auf Bestellung 11592 Stücke
Lieferzeit 21-28 Tag (e)
PHB66NQ03LT,118 PHB,PHD66NQ03LT.pdf
PHB66NQ03LT,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2206 Stücke - Preis und Lieferfrist anzeigen
800+ 1.8 EUR
PHB66NQ03LT,118 PHB,PHD66NQ03LT.pdf
PHB66NQ03LT,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1636 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1370 Stücke - Preis und Lieferfrist anzeigen
9+ 3.12 EUR
10+ 2.79 EUR
100+ 2.18 EUR
BUK6210-55C,118 BUK6210-55C.pdf
BUK6210-55C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13960 Stücke - Preis und Lieferfrist anzeigen
BUK7208-40B,118 BUK7208-40B.pdf
BUK7208-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 185°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2493 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN7R6-60BS,118 PSMN7R6-60BS.pdf
PSMN7R6-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 757 Stücke - Preis und Lieferfrist anzeigen
PSMN012-80BS,118 PSMN012-80BS.pdf
PSMN012-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN102-200Y,115 PSMN102-200Y.pdf
PSMN102-200Y,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 21.5A LFPAK56
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 107294 Stücke - Preis und Lieferfrist anzeigen
BCP53-16TX BCP53_BCX53_BC53PA.pdf
BCP53-16TX
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT223
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6031 Stücke - Preis und Lieferfrist anzeigen
BUK624R5-30C,118 BUK624R5-30C.pdf
BUK624R5-30C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 90A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 25V
Power Dissipation (Max): 158W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7Y07-30B,115 BUK7Y07-30B.pdf
BUK7Y07-30B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A LFPAK56
Manufacturer: Nexperia USA Inc.
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1773pF @ 25V
Power Dissipation (Max): 105W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2680 Stücke - Preis und Lieferfrist anzeigen
BUK7Y08-40B,115 BUK7Y08-40B.pdf
BUK7Y08-40B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9616-75B,118 BUK9616-75B.pdf
BUK9616-75B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1001 Stücke - Preis und Lieferfrist anzeigen
BUK9616-75B,118 BUK9616-75B.pdf
BUK9616-75B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
auf Bestellung 222 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 779 Stücke - Preis und Lieferfrist anzeigen
6+ 4.37 EUR
10+ 3.91 EUR
100+ 3.14 EUR
PHB21N06LT,118 PHB_PHD_PHP21N06LT.pdf
PHB21N06LT,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 19A D2PAK
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Technology: MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 56W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6673 Stücke - Preis und Lieferfrist anzeigen
PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 19196 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.8 EUR
10+ 3.39 EUR
100+ 2.64 EUR
500+ 2.18 EUR
1000+ 1.72 EUR
2000+ 1.61 EUR
5000+ 1.57 EUR
PSMN017-30EL,127 PSMN017-30EL.pdf
PSMN017-30EL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A I2PAK
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V
Power Dissipation (Max): 47W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: PSMN017
auf Bestellung 2921 Stücke
Lieferzeit 21-28 Tag (e)
BUK7575-55A,127 BUK7575-55A.pdf
BUK7575-55A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 20.3A TO220AB
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 483pF @ 25V
Power Dissipation (Max): 62W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9897 Stücke - Preis und Lieferfrist anzeigen
PSMN034-100PS,127 PSMN034-100PS.pdf
PSMN034-100PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 50 V
auf Bestellung 1015 Stücke
Lieferzeit 21-28 Tag (e)
PSMN027-100PS,127 PSMN027-100PS.pdf
PSMN027-100PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 37A TO220AB
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 103W (Tc)
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN4R3-30PL,127 PSMN4R3-30PL.pdf
PSMN4R3-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 12 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
auf Bestellung 2329 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 38395 Stücke - Preis und Lieferfrist anzeigen
7+ 4.16 EUR
10+ 3.73 EUR
100+ 3 EUR
500+ 2.46 EUR
1000+ 2.04 EUR
2000+ 1.92 EUR
BUK7575-100A,127 BUK7575-100A.pdf
BUK7575-100A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A TO220AB
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Power Dissipation (Max): 99W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10760 Stücke - Preis und Lieferfrist anzeigen
PSMN027-100XS,127 PSMN027-100XS.pdf
PSMN027-100XS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23.4A TO220F
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41.1W (Tc)
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PHP20N06T,127 PHP20N06T.pdf
PHP20N06T,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 20.3A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 4722 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15885 Stücke - Preis und Lieferfrist anzeigen
9+ 3.2 EUR
10+ 2.84 EUR
100+ 2.21 EUR
500+ 1.83 EUR
1000+ 1.44 EUR
2000+ 1.35 EUR
PHP18NQ11T,127 PHP18NQ11T.pdf
PHP18NQ11T,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 110V 18A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7663 Stücke - Preis und Lieferfrist anzeigen
PSMN016-100PS,127 PSMN016-100PS.pdf
PSMN016-100PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 57A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PHP29N08T,127 PHP29N08T.pdf
PHP29N08T,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 27A TO220AB
Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 11V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 2mA
Power Dissipation (Max): 88W (Tc)
auf Bestellung 4901 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32622 Stücke - Preis und Lieferfrist anzeigen
8+ 3.64 EUR
10+ 3.25 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.65 EUR
2000+ 1.54 EUR
PSMN4R5-40PS,127 PSMN4R5-40PS.pdf
PSMN4R5-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 888 Stücke
Lieferzeit 21-28 Tag (e)
BUK7513-75B,127
BUK7513-75B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7526-100B,127 BUK7526-100B.pdf
BUK7526-100B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2891 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9540-100A,127 BUK95,9640-100A.pdf
BUK9540-100A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 39A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7063 Stücke - Preis und Lieferfrist anzeigen
PSMN2R7-30PL,127 PSMN2R7-30PL.pdf
PSMN2R7-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 12 V
auf Bestellung 56 Stücke
Lieferzeit 21-28 Tag (e)
BUK754R0-40C,127 BUK754R0-40C.pdf
BUK754R0-40C,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Power Dissipation (Max): 203W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5708pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 989 Stücke - Preis und Lieferfrist anzeigen
BUK954R8-60E,127 BUK954R8-60E.pdf
BUK954R8-60E,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1572 Stücke - Preis und Lieferfrist anzeigen
BUK7E3R1-40E,127 BUK7E3R1-40E.pdf
BUK7E3R1-40E,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A I2PAK
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 234W (Tc)
auf Bestellung 221 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1263 Stücke - Preis und Lieferfrist anzeigen
6+ 4.52 EUR
10+ 4.07 EUR
100+ 3.27 EUR
PSMN5R0-80PS,127 PSMN5R0-80PS.pdf
PSMN5R0-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6793 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 146931 Stücke - Preis und Lieferfrist anzeigen
PSMN0R9-25YLC,115 PSMN0R9-25YLC.pdf
PSMN0R9-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1005 Stücke - Preis und Lieferfrist anzeigen
BZX84-B22,215 BZX84_SER.pdf
BZX84-B22,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 22V 250MW SOT23
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 15.4V
Impedance (Max) (Zzt): 55 Ohms
Power - Max: 250mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 22V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BZX84B22
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 29515 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 159768 Stücke - Preis und Lieferfrist anzeigen
BC846BPN,115 BC846BPN.pdf
BC846BPN,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 65V 0.1A 6TSSOP
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN, PNP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Part Number: BC846BP
auf Bestellung 8724 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 71402 Stücke - Preis und Lieferfrist anzeigen
BC846BPN,115 BC846BPN.pdf
BC846BPN,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 65V 0.1A 6TSSOP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
auf Bestellung 30177 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49949 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
BC846BPN,115 BC846BPN.pdf
BC846BPN,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 65V 0.1A 6TSSOP
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSSOP
Part Status: Active
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
auf Bestellung 30177 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49949 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.13 EUR
6000+ 0.11 EUR
15000+ 0.094 EUR
30000+ 0.088 EUR
BC846BS,115 BC846BS.pdf
BC846BS,115
Hersteller: Nexperia USA Inc.
Description: Description: TRANS 2NPN 65V 0.1A 6TSSOP
Operating Temperature: 150°C (TJ)
Frequency - Transition: 100MHz
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Base Part Number: BC846BS
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Operating Temperature: 150°C (TJ)
Frequency - Transition: 100MHz
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Base Part Number: BC846BS
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3125 Stücke - Preis und Lieferfrist anzeigen
BC846BS,115 BC846BS.pdf
BC846BS,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 65V 0.1A 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
auf Bestellung 2765 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 360 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
BC846BS,135 BC846BS.pdf
BC846BS,135
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 65V 0.1A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74AUP1G07GW-Q100H 74AUP1G07_Q100.pdf
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 3.6V 5TSSOP
Output Type: Open Drain
Number of Bits per Element: 1
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74AUP1G07
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PESD5V0X1UALD,315 PESD5V0X1UALD.pdf
PESD5V0X1UALD,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9VC DFN1006D-2
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: DFN1006D-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8800 Stücke - Preis und Lieferfrist anzeigen
PESD5V0X1UALD,315 PESD5V0X1UALD.pdf
PESD5V0X1UALD,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9VC DFN1006D-2
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: DFN1006D-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 1.55pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 8800 Stücke
Lieferzeit 21-28 Tag (e)
23+ 1.17 EUR
30+ 0.87 EUR
100+ 0.49 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
2000+ 0.22 EUR
5000+ 0.2 EUR
IP4234CZ6,115 IP4234CZ6.pdf
IP4234CZ6,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 6TSOP
Part Status: Active
Power Line Protection: Yes
Power - Peak Pulse: 100W
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 5.5V
Capacitance @ Frequency: 2.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37562 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.37 EUR
6000+ 0.35 EUR
15000+ 0.32 EUR
PESD5V0U4BF,115 PESD5V0U4BF_PESD5V0U4BW.pdf
PESD5V0U4BF,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 6XSON SOT886
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 2.9pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Voltage - Breakdown (Min): 5.5V
Voltage - Reverse Standoff (Typ): 5V (Max)
Bidirectional Channels: 4
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1276754 Stücke - Preis und Lieferfrist anzeigen
PEMH10,115 PEMH10_PUMH10.pdf
PEMH10,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN PREBIAS 0.3W SOT666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: P*MH10
Supplier Device Package: SOT-666
auf Bestellung 28874 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
74LVC2G04GN,132 74LVC2G04.pdf
74LVC2G04GN,132
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 2CH 2-INP 6XSON
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 4 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 6-XSON (0.9x1)
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 49478 Stücke - Preis und Lieferfrist anzeigen
PMN30UNEX PMN30UNE.pdf
PMN30UNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.8A 6TSOP
Manufacturer: Nexperia USA Inc.
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 558pF @ 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Base Part Number: PMN30
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2210 Stücke - Preis und Lieferfrist anzeigen
PMN52XPX PMN52XP.pdf
PMN52XPX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 2982 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2757 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
32+ 0.82 EUR
100+ 0.56 EUR
500+ 0.42 EUR
1000+ 0.31 EUR
BZV55-C3V3,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C3V3,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 500MW LLDS
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 95 Ohms
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 7135 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21050 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
50+ 0.53 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.093 EUR
BC857BV,115 BC857BV.pdf
BC857BV,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 45V 0.1A SOT666
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 100MHz
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 232121 Stücke - Preis und Lieferfrist anzeigen
BZB84-B20,215 BZB84_SER.pdf
BZB84-B20,215
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 20V SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
auf Bestellung 77 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5540 Stücke - Preis und Lieferfrist anzeigen
33+ 0.81 EUR
39+ 0.67 EUR
BZB984-C3V6,115 BZB984_SERIES.pdf
BZB984-C3V6,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 3.6V SOT663
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 265 mW
Part Status: Active
Supplier Device Package: SOT-663
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SOT-663
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 133065 Stücke - Preis und Lieferfrist anzeigen
BC846DS,115 BC846DS.pdf
BC846DS,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 65V 0.1A 6TSOP
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
PUMT1,115 PHGLS19727-1.pdf?t.download=true&u=5oefqw
PUMT1,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 40V 0.1A 6TSSOP
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
auf Bestellung 156 Stücke
Lieferzeit 21-28 Tag (e)
39+ 0.68 EUR
47+ 0.55 EUR
100+ 0.29 EUR
PUMZ2,115 PIMZ2_PUMZ2.pdf
PUMZ2,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 50V 0.15A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz, 190MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6025 Stücke - Preis und Lieferfrist anzeigen
31+ 0.86 EUR
37+ 0.71 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
PUMH16,115 PEMH16_PUMH16.pdf
PUMH16,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Manufacturer: Nexperia USA Inc.
Packaging: Cut Tape (CT)
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Part Number: PUMH16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PUMH18,115 PEMH18_PUMH18.pdf
PUMH18,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN PREBIAS 0.3W 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PUMH2,115 PEMH2_PUMH2.pdf
PUMH2,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 5779 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 463440 Stücke - Preis und Lieferfrist anzeigen
34+ 0.78 EUR
42+ 0.63 EUR
100+ 0.33 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
PUMH20,115 PEMH20_PUMH20.pdf
PUMH20,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN PREBIAS 0.3W 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 31450 Stücke - Preis und Lieferfrist anzeigen
PEMD9,115 PEMD9_PUMD9.pdf
PEMD9,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP SOT666
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-666
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PUMH13,115 PEMH13_PUMH13.pdf
PUMH13,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 74327 Stücke - Preis und Lieferfrist anzeigen
35+ 0.75 EUR
43+ 0.62 EUR
100+ 0.33 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
PUMD15,115 PEMD15_PUMD15.pdf
PUMD15,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP 6TSSOP
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
auf Bestellung 6130 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17720 Stücke - Preis und Lieferfrist anzeigen
39+ 0.68 EUR
47+ 0.55 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
PUMD4,115 PEMD4_PUMD4.pdf
PUMD4,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PUMD48,125 PEMD48_PUMD48.pdf
PUMD48,125
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
PUMD48,115 PEMD48_PUMD48.pdf
PUMD48,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP 50V 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3070 Stücke - Preis und Lieferfrist anzeigen
PUMH17,115 PEMH17_PUMH17.pdf
PUMH17,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 88504 Stücke - Preis und Lieferfrist anzeigen
39+ 0.68 EUR
47+ 0.55 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
PEMH10,115 PEMH10_PUMH10.pdf
PEMH10,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V SOT666
Part Status: Active
Supplier Device Package: SOT-666
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 29874 Stücke - Preis und Lieferfrist anzeigen
PEMH9,115 PEMH9_PIMH9_PUMH9.pdf
PEMH9,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN PREBIAS 0.3W SOT666
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SOT-666
Current - Collector (Ic) (Max): 100mA
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 361340 Stücke - Preis und Lieferfrist anzeigen
74LVC1G97GW,125 PHGLS30451-1.pdf?t.download=true&u=5oefqw
74LVC1G97GW,125
Hersteller: Nexperia USA Inc.
Description: IC GATE MULTIFUNCTION 6TSSOP
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 6-TSSOP
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55-C2V7,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C2V7,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 500MW LLDS
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 39148 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 445569 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
50+ 0.53 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
BZV55-C2V7,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C2V7,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 500MW LLDS
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Voltage - Zener (Nom) (Vz): 2.7 V
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 100 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZV55-C2V7,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C2V7,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 500MW LLDS
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 100 Ohms
auf Bestellung 35000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 449717 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.1 EUR
5000+ 0.093 EUR
12500+ 0.081 EUR
25000+ 0.073 EUR
BZV55-C7V5,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C7V5,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 500MW LLDS
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: LLDS; MiniMelf
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 428052 Stücke - Preis und Lieferfrist anzeigen
BZV55-C30,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C30,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 500MW LLDS
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
auf Bestellung 12500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 309456 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.1 EUR
5000+ 0.093 EUR
12500+ 0.081 EUR
BZV55-C4V7,135 BZV55_SER.pdf
BZV55-C4V7,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW SOD80C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: LLDS; MiniMelf
Operating Temperature: -65°C ~ 200°C
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 3µA @ 2V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
auf Bestellung 7399 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40687 Stücke - Preis und Lieferfrist anzeigen
BZV55-C4V7,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C4V7,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW LLDS
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
auf Bestellung 20687 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27399 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
50+ 0.53 EUR
100+ 0.29 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.093 EUR
BZV55-C4V7,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C4V7,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW LLDS
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28086 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.081 EUR
BZV55-C12,115 BZV55_SER.pdf
BZV55-C12,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 500MW SOD80C
Current - Reverse Leakage @ Vr: 100nA @ 8V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 500mW
Tolerance: ±5%
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Supplier Device Package: LLDS; MiniMelf
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -65°C ~ 200°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
auf Bestellung 13770 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100921 Stücke - Preis und Lieferfrist anzeigen
BZV55-C12,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C12,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 500MW LLDS
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: LLDS; MiniMelf
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 99691 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.1 EUR
5000+ 0.093 EUR
12500+ 0.081 EUR
PDTA124XT,215 PDTA124X_SER.pdf
PDTA124XT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2243 Stücke - Preis und Lieferfrist anzeigen
PDTA144WT,215 PDTA144W_SERIES.pdf
PDTA144WT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 107858 Stücke - Preis und Lieferfrist anzeigen
PDTC123ET,215 PDTC123E_SERIES.pdf
PDTC123ET,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
auf Bestellung 22 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 177154 Stücke - Preis und Lieferfrist anzeigen
PDTC123EU,115 PDTC123E_SERIES.pdf
PDTC123EU,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V SOT323
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
auf Bestellung 18443 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24717 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
56+ 0.47 EUR
102+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
PDTC123JU,115 PHGLS24124-1.pdf?t.download=true&u=5oefqw
PDTC123JU,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 86030 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 134420 Stücke - Preis und Lieferfrist anzeigen
56+ 0.47 EUR
62+ 0.42 EUR
113+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.097 EUR
PDTC123YU,115 PDTC123Y_SER.pdf
PDTC123YU,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 200MW SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2869 Stücke - Preis und Lieferfrist anzeigen
PESD5V0F5UV115 PESD5V0F5UV.pdf
PESD5V0F5UV115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE
Manufacturer: Rochester Electronics, LLC
Packaging: Bulk
Part Status: Active
auf Bestellung 128752 Stücke
Lieferzeit 21-28 Tag (e)
PDTC143XT,215 PDTC143X_SER.pdf
PDTC143XT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 160799 Stücke - Preis und Lieferfrist anzeigen
PDTC144WT,215 PDTC144W_SERIES.pdf
PDTC144WT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84W-C33F BZX84W_SER.pdf
BZX84W-C33F
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 275MW SOT323
Base Part Number: BZX84W-C33
Manufacturer: Nexperia USA Inc.
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 275mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
BZV55-C33,115 BZV55_SER.pdf
BZV55-C33,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 33V 500MW SOD80C
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50nA @ 23.1V
Impedance (Max) (Zzt): 80 Ohms
Base Part Number: BZV55C33
Supplier Device Package: LLDS; MiniMelf
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
auf Bestellung 12209 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 341945 Stücke - Preis und Lieferfrist anzeigen
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