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BZX84W-B24X BZX84W-B24X Nexperia USA Inc. BZX84W_SER.pdf Description: DIODE ZENER 24V 275MW SOT323
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 65450 Stücke:
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10764+0.054 EUR
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74HCT139D,652 74HCT139D,652 Nexperia USA Inc. 74HC_HCT139.pdf Description: IC DECODER/DEMUX 1 X 2:4 16-SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Produkt ist nicht verfügbar
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74HCT139PW,112 74HCT139PW,112 Nexperia USA Inc. 74HC_HCT139.pdf Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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74HCT374DB,118 74HCT374DB,118 Nexperia USA Inc. PHGLS06009-1.pdf?t.download=true&u=5oefqw Description: IC FF D-TYPE 1-ELE 8-BIT 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 6mA, 6mA
Trigger Type: Positive Edge
Clock Frequency: 44 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-SSOP
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Number of Bits per Element: 8
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PDTA143ZT-QR PDTA143ZT-QR Nexperia USA Inc. PDTA143ZT-Q.pdf Description: PDTA143ZT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BAT54A-QR BAT54A-QR Nexperia USA Inc. BAT54A-Q.pdf Description: DIODE ARR SCHOTTKY 30V TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BAT54A-QR BAT54A-QR Nexperia USA Inc. BAT54A-Q.pdf Description: DIODE ARR SCHOTTKY 30V TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSF080120L4A0Q NSF080120L4A0Q Nexperia USA Inc. NSF080120L4A0.pdf Description: SICFET N-CH 1200V 35A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
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10+21.98 EUR
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74LVC1G32GF,132 74LVC1G32GF,132 Nexperia USA Inc. 74LVC1G32.pdf Description: IC GATE OR 1CH 2-INP 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT891 (1x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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74LVC1G32GF,132 74LVC1G32GF,132 Nexperia USA Inc. 74LVC1G32.pdf Description: IC GATE OR 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT891 (1x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
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PBSS4480X-QF PBSS4480X-QF Nexperia USA Inc. PBSS4480X-Q.pdf Description: TRANS NPN 80V 4A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 230mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 550 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74HC11PW-Q100J 74HC11PW-Q100J Nexperia USA Inc. 74HC_HCT11_Q100.pdf Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74HC11PW-Q100J 74HC11PW-Q100J Nexperia USA Inc. 74HC_HCT11_Q100.pdf Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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36+0.58 EUR
52+0.4 EUR
58+0.37 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
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BAV70-QR BAV70-QR Nexperia USA Inc. BAV70-Q.pdf Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70-QR BAV70-QR Nexperia USA Inc. BAV70-Q.pdf Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B12X BZX58550-B12X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 12V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
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BZX58550-B15X BZX58550-B15X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 15V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Produkt ist nicht verfügbar
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BZX58550-B16X BZX58550-B16X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 16V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
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BZX58550-B18X BZX58550-B18X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 18V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13.6 V
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BZX58550-B1V8X BZX58550-B1V8X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 1.8V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
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BZX58550-B13X BZX58550-B13X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 13V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
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BZX58550-B10X BZX58550-B10X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 10V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
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BZX58550-B11X BZX58550-B11X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 11V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
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BZX58550-B15-QX BZX58550-B15-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 15V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B12-QX BZX58550-B12-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 12V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
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BZX58550-B13-QX BZX58550-B13-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 13V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Qualification: AEC-Q101
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BZX58550-B18-QX BZX58550-B18-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 18V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13.6 V
Qualification: AEC-Q101
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BZX58550-B16-QX BZX58550-B16-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 16V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
Qualification: AEC-Q101
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BZX58550-B10-QX BZX58550-B10-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 10V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B11-QX BZX58550-B11-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 11V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Qualification: AEC-Q101
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BZX58550-B1V8-QX BZX58550-B1V8-QX Nexperia USA Inc. BZX58550-Q_SER.pdf Description: DIODE ZENER 1.8V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Qualification: AEC-Q101
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74LVCH245APW,112 74LVCH245APW,112 Nexperia USA Inc. 74LVC_LVCH245A.pdf Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
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74LVC06APW,112 74LVC06APW,112 Nexperia USA Inc. 74LVC06A.pdf Description: IC INVERTER
Packaging: Bulk
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PMDPB30XNAX PMDPB30XNAX Nexperia USA Inc. PMDPB30XNA.pdf Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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PMDPB30XNAX PMDPB30XNAX Nexperia USA Inc. PMDPB30XNA.pdf Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
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PMCPB5530XAX PMCPB5530XAX Nexperia USA Inc. PMCPB5530XA.pdf Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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PMCPB5530XAX PMCPB5530XAX Nexperia USA Inc. PMCPB5530XA.pdf Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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BUK7J2R4-80MX BUK7J2R4-80MX Nexperia USA Inc. BUK7J2R4-80M.pdf Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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BUK7J2R4-80MX BUK7J2R4-80MX Nexperia USA Inc. BUK7J2R4-80M.pdf Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
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PSC1065B1-QZ PSC1065B1-QZ Nexperia USA Inc. PSC1065B1-Q.pdf Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC1065B1-QZ PSC1065B1-QZ Nexperia USA Inc. PSC1065B1-Q.pdf Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC0665KQ PSC0665KQ Nexperia USA Inc. PSC0665K.pdf Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
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PSC0665KQ PSC0665KQ Nexperia USA Inc. PSC0665K.pdf Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
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PSC1665LQ PSC1665LQ Nexperia USA Inc. PSC1665L.pdf Description: DIODE SIL CARB 650V 16A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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PSC2065LQ PSC2065LQ Nexperia USA Inc. PSC2065L.pdf Description: DIODE SIL CARB 650V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 680pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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PZU6.8B,115 PZU6.8B,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
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PZU6.8B,115 PZU6.8B,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
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BAV99QB-QZ BAV99QB-QZ Nexperia USA Inc. BAV99QB-Q.pdf Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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BAV99QB-QZ BAV99QB-QZ Nexperia USA Inc. BAV99QB-Q.pdf Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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BAV99QBZ BAV99QBZ Nexperia USA Inc. BAV99QB.pdf Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV99QBZ BAV99QBZ Nexperia USA Inc. BAV99QB.pdf Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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PDTA123YT,215 PDTA123YT,215 Nexperia USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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PDTA123YT,215 PDTA123YT,215 Nexperia USA Inc. PDTA123Y_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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197+0.11 EUR
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PMPB27EPZ Nexperia USA Inc. PMPB27EP.pdf Description: PMPB27EP/SOT1220/SOT1220
Packaging: Tape & Reel (TR)
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PMPB27EPZ Nexperia USA Inc. PMPB27EP.pdf Description: PMPB27EP/SOT1220/SOT1220
Packaging: Cut Tape (CT)
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BAS21H-QX BAS21H-QX Nexperia USA Inc. Description: BAS21H-Q/SOD123F/SOD2
Supplier Device Package: SOD-123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMBT3904YSRH PMBT3904YSRH Nexperia USA Inc. PMBT3904YSR.pdf Description: TRANS 2NPN 40V 200MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 230mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
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74LVC1G08GV-Q100,1 74LVC1G08GV-Q100,1 Nexperia USA Inc. 74LVC1G08_Q100.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74LVC1G08GV-Q100,1 74LVC1G08GV-Q100,1 Nexperia USA Inc. 74LVC1G08_Q100.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
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143+0.14 EUR
164+0.13 EUR
194+0.11 EUR
250+0.099 EUR
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1000+0.088 EUR
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74LVC2G32GM,125 74LVC2G32GM,125 Nexperia USA Inc. 74LVC2G32.pdf Description: IC GATE OR 2CH 2-INP 8XQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-XQFN (1.6x1.6)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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BZX84W-B24X BZX84W_SER.pdf
BZX84W-B24X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 24V 275MW SOT323
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 65450 Stücke:
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74HCT139D,652 74HC_HCT139.pdf
74HCT139D,652
Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1 X 2:4 16-SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Produkt ist nicht verfügbar
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74HCT139PW,112 74HC_HCT139.pdf
74HCT139PW,112
Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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74HCT374DB,118 PHGLS06009-1.pdf?t.download=true&u=5oefqw
74HCT374DB,118
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 6mA, 6mA
Trigger Type: Positive Edge
Clock Frequency: 44 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-SSOP
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Number of Bits per Element: 8
auf Bestellung 13000 Stücke:
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AnzahlPrivatkunde
551+0.99 EUR
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PDTA143ZT-QR PDTA143ZT-Q.pdf
PDTA143ZT-QR
Hersteller: Nexperia USA Inc.
Description: PDTA143ZT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BAT54A-QR BAT54A-Q.pdf
BAT54A-QR
Hersteller: Nexperia USA Inc.
Description: DIODE ARR SCHOTTKY 30V TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54A-QR BAT54A-Q.pdf
BAT54A-QR
Hersteller: Nexperia USA Inc.
Description: DIODE ARR SCHOTTKY 30V TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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NSF080120L4A0Q NSF080120L4A0.pdf
NSF080120L4A0Q
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 35A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 432 Stücke:
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1+31.08 EUR
10+21.98 EUR
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74LVC1G32GF,132 74LVC1G32.pdf
74LVC1G32GF,132
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 1CH 2-INP 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT891 (1x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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74LVC1G32GF,132 74LVC1G32.pdf
74LVC1G32GF,132
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT891 (1x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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PBSS4480X-QF PBSS4480X-Q.pdf
PBSS4480X-QF
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 4A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 230mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 550 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74HC11PW-Q100J 74HC_HCT11_Q100.pdf
74HC11PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74HC11PW-Q100J 74HC_HCT11_Q100.pdf
74HC11PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
52+0.4 EUR
58+0.37 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
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BAV70-QR BAV70-Q.pdf
BAV70-QR
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70-QR BAV70-Q.pdf
BAV70-QR
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B12X BZX58550_SER.pdf
BZX58550-B12X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Produkt ist nicht verfügbar
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BZX58550-B15X BZX58550_SER.pdf
BZX58550-B15X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Produkt ist nicht verfügbar
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BZX58550-B16X BZX58550_SER.pdf
BZX58550-B16X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
Produkt ist nicht verfügbar
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BZX58550-B18X BZX58550_SER.pdf
BZX58550-B18X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13.6 V
Produkt ist nicht verfügbar
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BZX58550-B1V8X BZX58550_SER.pdf
BZX58550-B1V8X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 1.8V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Produkt ist nicht verfügbar
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BZX58550-B13X BZX58550_SER.pdf
BZX58550-B13X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Produkt ist nicht verfügbar
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BZX58550-B10X BZX58550_SER.pdf
BZX58550-B10X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
Produkt ist nicht verfügbar
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BZX58550-B11X BZX58550_SER.pdf
BZX58550-B11X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Produkt ist nicht verfügbar
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BZX58550-B15-QX BZX58550-Q_SER.pdf
BZX58550-B15-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B12-QX BZX58550-Q_SER.pdf
BZX58550-B12-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B13-QX BZX58550-Q_SER.pdf
BZX58550-B13-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B18-QX BZX58550-Q_SER.pdf
BZX58550-B18-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 18V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B16-QX BZX58550-Q_SER.pdf
BZX58550-B16-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B10-QX BZX58550-Q_SER.pdf
BZX58550-B10-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B11-QX BZX58550-Q_SER.pdf
BZX58550-B11-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 11V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX58550-B1V8-QX BZX58550-Q_SER.pdf
BZX58550-B1V8-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 1.8V 270MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 270 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74LVCH245APW,112 74LVC_LVCH245A.pdf
74LVCH245APW,112
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 36748 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1426+0.4 EUR
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74LVC06APW,112 74LVC06A.pdf
74LVC06APW,112
Hersteller: Nexperia USA Inc.
Description: IC INVERTER
Packaging: Bulk
auf Bestellung 23889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2815+0.21 EUR
Mindestbestellmenge: 2815 Stücke
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PMDPB30XNAX PMDPB30XNA.pdf
PMDPB30XNAX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMDPB30XNAX PMDPB30XNA.pdf
PMDPB30XNAX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
22+0.96 EUR
50+0.7 EUR
100+0.62 EUR
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PMCPB5530XAX PMCPB5530XA.pdf
PMCPB5530XAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMCPB5530XAX PMCPB5530XA.pdf
PMCPB5530XAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7J2R4-80MX BUK7J2R4-80M.pdf
BUK7J2R4-80MX
Hersteller: Nexperia USA Inc.
Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK7J2R4-80MX BUK7J2R4-80M.pdf
BUK7J2R4-80MX
Hersteller: Nexperia USA Inc.
Description: BUK7J2R4-80M/SOT1023/LFPAK56E
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 294W (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 231A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.83 EUR
10+4.45 EUR
50+3.43 EUR
100+3.09 EUR
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PSC1065B1-QZ PSC1065B1-Q.pdf
PSC1065B1-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PSC1065B1-QZ PSC1065B1-Q.pdf
PSC1065B1-QZ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 7977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.52 EUR
10+5.62 EUR
100+3.96 EUR
500+3.36 EUR
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PSC0665KQ PSC0665K.pdf
PSC0665KQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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PSC0665KQ PSC0665K.pdf
PSC0665KQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 6A TO220
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 225pF @ 1V, 1MHz
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.58 EUR
10+7.02 EUR
50+5.5 EUR
100+5.01 EUR
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PSC1665LQ PSC1665L.pdf
PSC1665LQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARB 650V 16A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.12 EUR
10+11.02 EUR
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PSC2065LQ PSC2065L.pdf
PSC2065LQ
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARB 650V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 680pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.07 EUR
10+14.52 EUR
50+11.71 EUR
100+10.81 EUR
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PZU6.8B,115 PZUXB_SER.pdf
PZU6.8B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.098 EUR
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PZU6.8B,115 PZUXB_SER.pdf
PZU6.8B,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Qualification: AEC-Q100
auf Bestellung 11804 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
64+0.33 EUR
90+0.24 EUR
103+0.2 EUR
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BAV99QB-QZ BAV99QB-Q.pdf
BAV99QB-QZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV99QB-QZ BAV99QB-Q.pdf
BAV99QB-QZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB-Q/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
179+0.12 EUR
211+0.1 EUR
257+0.082 EUR
287+0.074 EUR
500+0.068 EUR
1000+0.064 EUR
2500+0.06 EUR
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BAV99QBZ BAV99QB.pdf
BAV99QBZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.043 EUR
Mindestbestellmenge: 5000 Stücke
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BAV99QBZ BAV99QB.pdf
BAV99QBZ
Hersteller: Nexperia USA Inc.
Description: BAV99QB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA
Supplier Device Package: DFN1110D-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
193+0.11 EUR
224+0.094 EUR
272+0.077 EUR
305+0.069 EUR
500+0.064 EUR
1000+0.06 EUR
2500+0.056 EUR
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PDTA123YT,215 PDTA123Y_SER.pdf
PDTA123YT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTA123YT,215 PDTA123Y_SER.pdf
PDTA123YT,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1655 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
121+0.18 EUR
171+0.12 EUR
197+0.11 EUR
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PMPB27EPZ PMPB27EP.pdf
Hersteller: Nexperia USA Inc.
Description: PMPB27EP/SOT1220/SOT1220
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PMPB27EPZ PMPB27EP.pdf
Hersteller: Nexperia USA Inc.
Description: PMPB27EP/SOT1220/SOT1220
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BAS21H-QX
BAS21H-QX
Hersteller: Nexperia USA Inc.
Description: BAS21H-Q/SOD123F/SOD2
Supplier Device Package: SOD-123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PMBT3904YSRH PMBT3904YSR.pdf
PMBT3904YSRH
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 40V 200MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 230mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74LVC1G08GV-Q100,1 74LVC1G08_Q100.pdf
74LVC1G08GV-Q100,1
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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74LVC1G08GV-Q100,1 74LVC1G08_Q100.pdf
74LVC1G08GV-Q100,1
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Qualification: AEC-Q100
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
164+0.13 EUR
194+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
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74LVC2G32GM,125 74LVC2G32.pdf
74LVC2G32GM,125
Hersteller: Nexperia USA Inc.
Description: IC GATE OR 2CH 2-INP 8XQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-XQFN (1.6x1.6)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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