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PTVS3V3P1UTP,115 PTVS3V3P1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1584 Stücke:
Lieferzeit 14-21 Tag (e)
175+0.41 EUR
246+ 0.29 EUR
340+ 0.21 EUR
359+ 0.2 EUR
Mindestbestellmenge: 175
PTVS3V3S1UTR,115 PTVS3V3S1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 43.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.38 EUR
323+ 0.22 EUR
358+ 0.2 EUR
470+ 0.15 EUR
497+ 0.14 EUR
Mindestbestellmenge: 186
PTVS10VP1UP,115 PTVS10VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
228+ 0.31 EUR
318+ 0.22 EUR
337+ 0.21 EUR
Mindestbestellmenge: 152
PTVS10VP1UTP,115 PTVS10VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS10VS1UR,115 PTVS10VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS10VS1UTR,115 PTVS10VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
Mindestbestellmenge: 152
PTVS10VU1UPAZ PTVS10VU1UPAZ NEXPERIA PTVSXU1UPA_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
PTVS11VP1UP,115 PTVS11VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 1202 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
268+ 0.27 EUR
373+ 0.19 EUR
394+ 0.18 EUR
Mindestbestellmenge: 186
PTVS11VS1UR,115 PTVS11VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
442+ 0.16 EUR
467+ 0.15 EUR
Mindestbestellmenge: 198
PTVS11VS1UTR,115 PTVS11VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VP1UP,115 PTVS12VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
236+ 0.3 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 167
PTVS12VS1UR,115 PTVS12VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2021 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
338+ 0.21 EUR
374+ 0.19 EUR
473+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 186
PTVS12VS1UTR,115 PTVS12VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VU1UPAZ NEXPERIA PTVSXU1UPA_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS14VP1UP,115 PTVS14VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS14VP1UTP,115 PTVS14VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS14VS1UR,115 PTVS14VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
397+ 0.18 EUR
405+ 0.17 EUR
Mindestbestellmenge: 198
PTVS14VS1UTR,115 PTVS14VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS15VS1UR,115 PTVS15VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 3389 Stücke:
Lieferzeit 14-21 Tag (e)
188+0.38 EUR
323+ 0.22 EUR
365+ 0.2 EUR
473+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 188
PTVS15VS1UTR,115 PTVS15VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
195+0.37 EUR
343+ 0.21 EUR
382+ 0.19 EUR
447+ 0.16 EUR
473+ 0.15 EUR
Mindestbestellmenge: 195
PTVS15VU1UPAZ NEXPERIA PTVSXU1UPA_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS16VP1UP,115 PTVS16VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
171+0.42 EUR
239+ 0.3 EUR
334+ 0.21 EUR
353+ 0.2 EUR
Mindestbestellmenge: 171
PTVS16VS1UR,115 PTVS16VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2030 Stücke:
Lieferzeit 14-21 Tag (e)
191+0.38 EUR
343+ 0.21 EUR
385+ 0.19 EUR
480+ 0.15 EUR
508+ 0.14 EUR
Mindestbestellmenge: 191
PTVS16VS1UTR,115 PTVS16VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
203+0.35 EUR
338+ 0.21 EUR
374+ 0.19 EUR
443+ 0.16 EUR
469+ 0.15 EUR
Mindestbestellmenge: 203
PTVS17VP1UP,115 PTVS17VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS17VP1UTP,115 PTVS17VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS17VS1UR,115 PTVS17VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
470+ 0.15 EUR
497+ 0.14 EUR
Mindestbestellmenge: 198
PTVS18VP1UP,115 PTVS18VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VP1UTP,115 PTVS18VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VS1UR,115 PTVS18VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VS1UTR,115 PTVS18VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VU1UPAZ PTVS18VU1UPAZ NEXPERIA PTVS18VU1UPA.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 97A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
PTVS20VP1UP,115 PTVS20VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS20VP1UTP,115 PTVS20VP1UTP,115 NEXPERIA PTVSXP1UTP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS20VS1UR,115 PTVS20VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
492+ 0.15 EUR
521+ 0.14 EUR
Mindestbestellmenge: 198
PTVS20VS1UTR,115 PTVS20VS1UTR,115 NEXPERIA PTVSXS1UTR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS22VP1UP,115 PTVS22VP1UP,115 NEXPERIA PTVSXP1UP_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
191+0.38 EUR
268+ 0.27 EUR
373+ 0.19 EUR
394+ 0.18 EUR
Mindestbestellmenge: 191
PTVS22VS1UR,115 PTVS22VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PMV100XPEAR PMV100XPEAR NEXPERIA PMV100XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Mounting: SMD
Case: SOT23; TO236AB
Drain current: -1.5A
On-state resistance: 187mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 6nC
Kind of channel: enhanced
Pulsed drain current: -10A
Drain-source voltage: -20V
Produkt ist nicht verfügbar
PMV130ENEAR PMV130ENEAR NEXPERIA PMV130ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)
319+0.22 EUR
365+ 0.2 EUR
407+ 0.18 EUR
523+ 0.14 EUR
554+ 0.13 EUR
Mindestbestellmenge: 319
PMV27UPEAR PMV27UPEAR NEXPERIA PMV27UPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV27UPER PMV27UPER NEXPERIA PMV27UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV65ENEAR PMV65ENEAR NEXPERIA PMV65ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Produkt ist nicht verfügbar
PMV65UNER PMV65UNER NEXPERIA PMV65UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 13735 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
420+ 0.17 EUR
465+ 0.15 EUR
570+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 295
PMDXB550UNEZ NEXPERIA PMDXB550UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMDXB950UPEZ NEXPERIA PMDXB950UPE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
NZH30C,115 NZH30C,115 NEXPERIA NZH_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 30V
Type of diode: Zener
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
670+0.11 EUR
725+ 0.099 EUR
960+ 0.075 EUR
1015+ 0.071 EUR
Mindestbestellmenge: 670
NZH13B,115 NZH13B,115 NEXPERIA NZH_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 13V
Type of diode: Zener
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
980+0.073 EUR
1060+ 0.068 EUR
1400+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 980
74LVT125D,118 NEXPERIA 74LVT_LVTH125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; SO14; LVT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
Produkt ist nicht verfügbar
74LVT125PW,118 74LVT125PW,118 NEXPERIA 74LVT_LVTH125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
auf Bestellung 1742 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
118+ 0.61 EUR
133+ 0.54 EUR
156+ 0.46 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 112
PHP45NQ10T,127 PHP45NQ10T,127 NEXPERIA PHP45NQ10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 150W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV160UP,215 PMV160UP,215 NEXPERIA PMV160UP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4974 Stücke:
Lieferzeit 14-21 Tag (e)
275+0.26 EUR
506+ 0.14 EUR
562+ 0.13 EUR
747+ 0.096 EUR
789+ 0.091 EUR
Mindestbestellmenge: 275
PMV240SPR PMV240SPR NEXPERIA PMV240SP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV28XPEAR PMV28XPEAR NEXPERIA PMV28XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPAR NEXPERIA PMV30XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV37EN2R PMV37EN2R NEXPERIA PMV37EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV45EN2VL PMV45EN2VL NEXPERIA PMV45EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV50UPE,215 PMV50UPE,215 NEXPERIA PMV50UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV75UP,215 PMV75UP,215 NEXPERIA PMV75UP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BZX84J-B5V1,115 BZX84J-B5V1,115 NEXPERIA BZX84J_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 5.1V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Power dissipation: 0.55W
Max. load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.1V
Type of diode: Zener
Produkt ist nicht verfügbar
PTVS3V3P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS3V3P1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 5.6V; 75A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1584 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
175+0.41 EUR
246+ 0.29 EUR
340+ 0.21 EUR
359+ 0.2 EUR
Mindestbestellmenge: 175
PTVS3V3S1UTR,115 PTVSXS1UTR_SER.pdf
PTVS3V3S1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 43.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 185°C
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.38 EUR
323+ 0.22 EUR
358+ 0.2 EUR
470+ 0.15 EUR
497+ 0.14 EUR
Mindestbestellmenge: 186
PTVS10VP1UP,115 PTVSXP1UP_SER.pdf
PTVS10VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
228+ 0.31 EUR
318+ 0.22 EUR
337+ 0.21 EUR
Mindestbestellmenge: 152
PTVS10VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS10VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS10VS1UR,115 PTVSXS1UR_SER.pdf
PTVS10VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS10VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS10VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
Mindestbestellmenge: 152
PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
Produkt ist nicht verfügbar
PTVS11VP1UP,115 PTVSXP1UP_SER.pdf
PTVS11VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 1202 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
268+ 0.27 EUR
373+ 0.19 EUR
394+ 0.18 EUR
Mindestbestellmenge: 186
PTVS11VS1UR,115 PTVSXS1UR_SER.pdf
PTVS11VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
442+ 0.16 EUR
467+ 0.15 EUR
Mindestbestellmenge: 198
PTVS11VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS11VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VP1UP,115 PTVSXP1UP_SER.pdf
PTVS12VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
236+ 0.3 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 167
PTVS12VS1UR,115 PTVSXS1UR_SER.pdf
PTVS12VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
auf Bestellung 2021 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
338+ 0.21 EUR
374+ 0.19 EUR
473+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 186
PTVS12VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS12VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS12VU1UPAZ PTVSXU1UPA_SER.pdf
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS14VP1UP,115 PTVSXP1UP_SER.pdf
PTVS14VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS14VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS14VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS14VS1UR,115 PTVSXS1UR_SER.pdf
PTVS14VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
397+ 0.18 EUR
405+ 0.17 EUR
Mindestbestellmenge: 198
PTVS14VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS14VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS15VS1UR,115 PTVSXS1UR_SER.pdf
PTVS15VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 3389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
188+0.38 EUR
323+ 0.22 EUR
365+ 0.2 EUR
473+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 188
PTVS15VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS15VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
195+0.37 EUR
343+ 0.21 EUR
382+ 0.19 EUR
447+ 0.16 EUR
473+ 0.15 EUR
Mindestbestellmenge: 195
PTVS15VU1UPAZ PTVSXU1UPA_SER.pdf
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Produkt ist nicht verfügbar
PTVS16VP1UP,115 PTVSXP1UP_SER.pdf
PTVS16VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
239+ 0.3 EUR
334+ 0.21 EUR
353+ 0.2 EUR
Mindestbestellmenge: 171
PTVS16VS1UR,115 PTVSXS1UR_SER.pdf
PTVS16VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
343+ 0.21 EUR
385+ 0.19 EUR
480+ 0.15 EUR
508+ 0.14 EUR
Mindestbestellmenge: 191
PTVS16VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS16VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
203+0.35 EUR
338+ 0.21 EUR
374+ 0.19 EUR
443+ 0.16 EUR
469+ 0.15 EUR
Mindestbestellmenge: 203
PTVS17VP1UP,115 PTVSXP1UP_SER.pdf
PTVS17VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS17VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS17VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS17VS1UR,115 PTVSXS1UR_SER.pdf
PTVS17VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
470+ 0.15 EUR
497+ 0.14 EUR
Mindestbestellmenge: 198
PTVS18VP1UP,115 PTVSXP1UP_SER.pdf
PTVS18VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS18VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VS1UR,115 PTVSXS1UR_SER.pdf
PTVS18VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS18VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS18VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 97A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 1µA
Produkt ist nicht verfügbar
PTVS20VP1UP,115 PTVSXP1UP_SER.pdf
PTVS20VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PTVS20VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS20VP1UTP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS20VS1UR,115 PTVSXS1UR_SER.pdf
PTVS20VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
358+ 0.2 EUR
394+ 0.18 EUR
492+ 0.15 EUR
521+ 0.14 EUR
Mindestbestellmenge: 198
PTVS20VS1UTR,115 PTVSXS1UTR_SER.pdf
PTVS20VS1UTR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Produkt ist nicht verfügbar
PTVS22VP1UP,115 PTVSXP1UP_SER.pdf
PTVS22VP1UP,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
268+ 0.27 EUR
373+ 0.19 EUR
394+ 0.18 EUR
Mindestbestellmenge: 191
PTVS22VS1UR,115 PTVSXS1UR_SER.pdf
PTVS22VS1UR,115
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
PMV100XPEAR PMV100XPEA.pdf
PMV100XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Mounting: SMD
Case: SOT23; TO236AB
Drain current: -1.5A
On-state resistance: 187mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 6nC
Kind of channel: enhanced
Pulsed drain current: -10A
Drain-source voltage: -20V
Produkt ist nicht verfügbar
PMV130ENEAR PMV130ENEA.pdf
PMV130ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
319+0.22 EUR
365+ 0.2 EUR
407+ 0.18 EUR
523+ 0.14 EUR
554+ 0.13 EUR
Mindestbestellmenge: 319
PMV27UPEAR PMV27UPEA.pdf
PMV27UPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV27UPER PMV27UPE.pdf
PMV27UPER
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMV65ENEAR PMV65ENEA.pdf
PMV65ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Produkt ist nicht verfügbar
PMV65UNER PMV65UNE.pdf
PMV65UNER
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 13735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
420+ 0.17 EUR
465+ 0.15 EUR
570+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 295
PMDXB550UNEZ PMDXB550UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMDXB950UPEZ PMDXB950UPE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
NZH30C,115 NZH_SER.pdf
NZH30C,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 30V
Type of diode: Zener
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
670+0.11 EUR
725+ 0.099 EUR
960+ 0.075 EUR
1015+ 0.071 EUR
Mindestbestellmenge: 670
NZH13B,115 NZH_SER.pdf
NZH13B,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 13V
Type of diode: Zener
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
980+0.073 EUR
1060+ 0.068 EUR
1400+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 980
74LVT125D,118 74LVT_LVTH125.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; SO14; LVT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
Produkt ist nicht verfügbar
74LVT125PW,118 74LVT_LVTH125.pdf
74LVT125PW,118
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
auf Bestellung 1742 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
112+0.64 EUR
118+ 0.61 EUR
133+ 0.54 EUR
156+ 0.46 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 112
PHP45NQ10T,127 PHP45NQ10T.pdf
PHP45NQ10T,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 150W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV160UP,215 PMV160UP.pdf
PMV160UP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4974 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
275+0.26 EUR
506+ 0.14 EUR
562+ 0.13 EUR
747+ 0.096 EUR
789+ 0.091 EUR
Mindestbestellmenge: 275
PMV240SPR PMV240SP.pdf
PMV240SPR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV28XPEAR PMV28XPEA.pdf
PMV28XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPA.pdf
PMV30XPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV37EN2R PMV37EN2.pdf
PMV37EN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV45EN2VL PMV45EN2.pdf
PMV45EN2VL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV50UPE,215 PMV50UPE.pdf
PMV50UPE,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMV75UP,215 PMV75UP.pdf
PMV75UP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BZX84J-B5V1,115 BZX84J_SER.pdf
BZX84J-B5V1,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 5.1V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Power dissipation: 0.55W
Max. load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.1V
Type of diode: Zener
Produkt ist nicht verfügbar
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