Produkte > NEXPERIA > Alle Produkte des Herstellers NEXPERIA (84065) > Seite 360 nach 1402

Wählen Sie Seite:    << Vorherige Seite ]  1 140 280 355 356 357 358 359 360 361 362 363 364 365 420 560 700 840 980 1120 1260 1400 1402  Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
BUK9K35-60RAX NEXPERIA BUK9K35-60RA.pdf BUK9K35-60RAX Multi channel transistors
Produkt ist nicht verfügbar
BUK9K45-100E,115 BUK9K45-100E,115 NEXPERIA BUK9K45-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1261 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
58+ 1.24 EUR
67+ 1.07 EUR
71+ 1.02 EUR
100+ 0.99 EUR
500+ 0.97 EUR
Mindestbestellmenge: 52
BUK9K52-60RAX NEXPERIA BUK9K52-60RA.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 64A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K5R1-30EX NEXPERIA BUK9K5R1-30E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 329A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 26.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9K5R6-30EX NEXPERIA BUK9K5R6-30E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 305A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 305A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K6R8-40EX NEXPERIA BUK9K6R8-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 265A
Power dissipation: 64W
Case: LFPAK56D; SOT1205
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K89-100E,115 NEXPERIA BUK9K89-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K8R7-40EX NEXPERIA BUK9K8R7-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 211A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M10-30EX NEXPERIA BUK9M10-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M11-40EX NEXPERIA BUK9M11-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M11-40HX NEXPERIA BUK9M11-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 193A
Power dissipation: 50W
Case: LFPAK33; SOT1210
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M12-60EX NEXPERIA BUK9M12-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M120-100EX NEXPERIA BUK9M120-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.1A; Idm: 46A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.1A
Pulsed drain current: 46A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M14-40EX NEXPERIA BUK9M14-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M15-40HX NEXPERIA BUK9M15-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M15-60EX NEXPERIA BUK9M15-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M156-100EX NEXPERIA BUK9M156-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M17-30EX NEXPERIA BUK9M17-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M19-60EX NEXPERIA BUK9M19-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 62W
Gate charge: 13.8nC
Kind of channel: enhanced
Pulsed drain current: 152A
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 26.8A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M20-40HX NEXPERIA BUK9M20-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M23-80EX NEXPERIA BUK9M23-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M24-60EX NEXPERIA BUK9M24-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M28-80EX BUK9M28-80EX NEXPERIA BUK9M28-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
75+0.96 EUR
92+ 0.79 EUR
102+ 0.71 EUR
128+ 0.56 EUR
135+ 0.53 EUR
1000+ 0.52 EUR
1500+ 0.51 EUR
Mindestbestellmenge: 75
BUK9M35-80EX NEXPERIA BUK9M35-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M3R3-40HX NEXPERIA BUK9M3R3-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M42-60EX NEXPERIA BUK9M42-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M43-100EX NEXPERIA BUK9M43-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M4R3-40HX NEXPERIA BUK9M4R3-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M5R0-40HX NEXPERIA BUK9M5R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M5R2-30EX NEXPERIA BUK9M5R2-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63A
Pulsed drain current: 358A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M67-60ELX NEXPERIA BUK9M67-60EL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M6R0-40HX NEXPERIA BUK9M6R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M6R6-30EX NEXPERIA BUK9M6R6-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 30V
Drain current: 54.7A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 75W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 309A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M6R7-40HX NEXPERIA BUK9M6R7-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M7R2-40EX NEXPERIA BUK9M7R2-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M85-60EX NEXPERIA BUK9M85-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M8R5-40HX NEXPERIA BUK9M8R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M9R1-40EX NEXPERIA BUK9M9R1-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W
Power dissipation: 75W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
On-state resistance: 18.1mΩ
Drain current: 45.5A
Polarisation: unipolar
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate charge: 16.2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 258A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M9R5-40HX NEXPERIA BUK9M9R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 23.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y09-40B,115 NEXPERIA BUK9Y09-40B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y104-100B,115 NEXPERIA BUK9Y104-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.48A
Pulsed drain current: 59A
Power dissipation: 59W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y11-80EX NEXPERIA BUK9Y11-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59.3A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 44.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y113-100E,115 NEXPERIA BUK9Y113-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 312mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y12-40E,115 NEXPERIA BUK9Y12-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36.7A
Pulsed drain current: 208A
Power dissipation: 65W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y15-100E,115 NEXPERIA BUK9Y15-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 45.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y19-75B,115 BUK9Y19-75B,115 NEXPERIA BUK9Y19-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1382 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
55+ 1.32 EUR
73+ 0.99 EUR
76+ 0.94 EUR
500+ 0.92 EUR
Mindestbestellmenge: 45
BUK9Y1R3-40HX NEXPERIA BUK9Y1R3-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y1R6-40HX NEXPERIA Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 107.8nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.8mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y1R9-40HX NEXPERIA BUK9Y1R9-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 217W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 5.7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y22-100E,115 NEXPERIA BUK9Y22-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y2R4-40HX NEXPERIA BUK9Y2R4-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 163W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 78.2nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y2R8-40HX NEXPERIA BUK9Y2R8-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 172W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y3R5-40E,115 NEXPERIA BUK9Y3R5-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 591A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 30.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y4R8-60E,115 NEXPERIA BUK9Y4R8-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y6R5-40HX NEXPERIA BUK9Y6R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 284A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y72-80E,115 NEXPERIA BUK9Y72-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10.7A
Pulsed drain current: 61A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 196mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y7R0-60ELX NEXPERIA BUK9Y7R0-60EL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 612A
Power dissipation: 238.4W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 152nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y7R2-60E,115 NEXPERIA BUK9Y7R2-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 72A
Pulsed drain current: 405A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y7R6-40E,115 NEXPERIA BUK9Y7R6-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y8R5-80EX NEXPERIA BUK9Y8R5-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 54.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9K35-60RAX BUK9K35-60RA.pdf
Hersteller: NEXPERIA
BUK9K35-60RAX Multi channel transistors
Produkt ist nicht verfügbar
BUK9K45-100E,115 BUK9K45-100E.pdf
BUK9K45-100E,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1261 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.39 EUR
58+ 1.24 EUR
67+ 1.07 EUR
71+ 1.02 EUR
100+ 0.99 EUR
500+ 0.97 EUR
Mindestbestellmenge: 52
BUK9K52-60RAX BUK9K52-60RA.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 64A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K5R1-30EX BUK9K5R1-30E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 329A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 26.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9K5R6-30EX BUK9K5R6-30E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 305A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 305A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K6R8-40EX BUK9K6R8-40E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 265A
Power dissipation: 64W
Case: LFPAK56D; SOT1205
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K89-100E,115 BUK9K89-100E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K8R7-40EX BUK9K8R7-40E.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 211A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M10-30EX BUK9M10-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M11-40EX BUK9M11-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M11-40HX BUK9M11-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 193A
Power dissipation: 50W
Case: LFPAK33; SOT1210
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M12-60EX BUK9M12-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M120-100EX BUK9M120-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.1A; Idm: 46A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.1A
Pulsed drain current: 46A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M14-40EX BUK9M14-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M15-40HX BUK9M15-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M15-60EX BUK9M15-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M156-100EX BUK9M156-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M17-30EX BUK9M17-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M19-60EX BUK9M19-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 62W
Gate charge: 13.8nC
Kind of channel: enhanced
Pulsed drain current: 152A
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 26.8A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M20-40HX BUK9M20-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M23-80EX BUK9M23-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M24-60EX BUK9M24-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M28-80EX BUK9M28-80E.pdf
BUK9M28-80EX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
92+ 0.79 EUR
102+ 0.71 EUR
128+ 0.56 EUR
135+ 0.53 EUR
1000+ 0.52 EUR
1500+ 0.51 EUR
Mindestbestellmenge: 75
BUK9M35-80EX BUK9M35-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M3R3-40HX BUK9M3R3-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M42-60EX BUK9M42-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M43-100EX BUK9M43-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M4R3-40HX BUK9M4R3-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M5R0-40HX BUK9M5R0-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M5R2-30EX BUK9M5R2-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63A
Pulsed drain current: 358A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M67-60ELX BUK9M67-60EL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M6R0-40HX BUK9M6R0-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M6R6-30EX BUK9M6R6-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 30V
Drain current: 54.7A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 75W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 309A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M6R7-40HX BUK9M6R7-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M7R2-40EX BUK9M7R2-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M85-60EX BUK9M85-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M8R5-40HX BUK9M8R5-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M9R1-40EX BUK9M9R1-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W
Power dissipation: 75W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
On-state resistance: 18.1mΩ
Drain current: 45.5A
Polarisation: unipolar
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate charge: 16.2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 258A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M9R5-40HX BUK9M9R5-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 23.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y09-40B,115 BUK9Y09-40B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y104-100B,115 BUK9Y104-100B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.48A
Pulsed drain current: 59A
Power dissipation: 59W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y11-80EX BUK9Y11-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59.3A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 44.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y113-100E,115 BUK9Y113-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 312mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y12-40E,115 BUK9Y12-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36.7A
Pulsed drain current: 208A
Power dissipation: 65W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y15-100E,115 BUK9Y15-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 45.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y19-75B,115 BUK9Y19-75B.pdf
BUK9Y19-75B,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1382 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
55+ 1.32 EUR
73+ 0.99 EUR
76+ 0.94 EUR
500+ 0.92 EUR
Mindestbestellmenge: 45
BUK9Y1R3-40HX BUK9Y1R3-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y1R6-40HX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 107.8nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.8mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y1R9-40HX BUK9Y1R9-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 217W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 5.7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y22-100E,115 BUK9Y22-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y2R4-40HX BUK9Y2R4-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 163W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 78.2nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y2R8-40HX BUK9Y2R8-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 172W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y3R5-40E,115 BUK9Y3R5-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 591A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 30.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y4R8-60E,115 BUK9Y4R8-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y6R5-40HX BUK9Y6R5-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 284A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y72-80E,115 BUK9Y72-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10.7A
Pulsed drain current: 61A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 196mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y7R0-60ELX BUK9Y7R0-60EL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 612A
Power dissipation: 238.4W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 152nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
BUK9Y7R2-60E,115 BUK9Y7R2-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 72A
Pulsed drain current: 405A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y7R6-40E,115 BUK9Y7R6-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y8R5-80EX BUK9Y8R5-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 54.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
Wählen Sie Seite:    << Vorherige Seite ]  1 140 280 355 356 357 358 359 360 361 362 363 364 365 420 560 700 840 980 1120 1260 1400 1402  Nächste Seite >> ]