| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BUK9K35-60RAX | NEXPERIA |
 BUK9K35-60RAX Multi channel transistors |
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BUK9K45-100E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 83A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1261 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9K52-60RAX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 64A Power dissipation: 32W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K5R1-30EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 329A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 10mΩ Mounting: SMD Gate charge: 26.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K5R6-30EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 305A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 305A Power dissipation: 64W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K6R8-40EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 265A Power dissipation: 64W Case: LFPAK56D; SOT1205 On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K89-100E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.9A Pulsed drain current: 50A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 245mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K8R7-40EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M10-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 216A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M11-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 211A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 22mΩ Mounting: SMD Gate charge: 13.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M11-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 34A Pulsed drain current: 193A Power dissipation: 50W Case: LFPAK33; SOT1210 On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 216A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 27mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M120-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.1A; Idm: 46A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.1A Pulsed drain current: 46A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M14-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 31A Pulsed drain current: 176A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M15-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.4A Pulsed drain current: 155A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 36.9mΩ Mounting: SMD Gate charge: 16.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M15-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 188A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M156-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Pulsed drain current: 37A Power dissipation: 36W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M17-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 148A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M19-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W Mounting: SMD Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Power dissipation: 62W Gate charge: 13.8nC Kind of channel: enhanced Pulsed drain current: 152A Case: LFPAK33; SOT1210 Drain-source voltage: 60V Drain current: 26.8A On-state resistance: 43mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M20-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 125A Power dissipation: 38W Case: LFPAK33; SOT1210 On-state resistance: 48.5mΩ Mounting: SMD Gate charge: 12.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M23-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M24-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22.4A Pulsed drain current: 127A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 54mΩ Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M28-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 70mΩ Mounting: SMD Gate charge: 16.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9M35-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 19A Pulsed drain current: 106A Power dissipation: 62W Case: LFPAK33; SOT1210 On-state resistance: 88mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M3R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.2A Pulsed drain current: 86A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 95mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M43-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17.6A Pulsed drain current: 99A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 121mΩ Mounting: SMD Gate charge: 20.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M4R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 12mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M5R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61.7A Pulsed drain current: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 On-state resistance: 14mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M5R2-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 63A Pulsed drain current: 358A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M67-60ELX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 85A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 148mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 311A Power dissipation: 70W Case: LFPAK33; SOT1210 On-state resistance: 15mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R6-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 30V Drain current: 54.7A On-state resistance: 13mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 75W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 309A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M7R2-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 52A Pulsed drain current: 296A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 19.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M85-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 51A Power dissipation: 31W Case: LFPAK33; SOT1210 On-state resistance: 192mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M9R1-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W Power dissipation: 75W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Application: automotive industry On-state resistance: 18.1mΩ Drain current: 45.5A Polarisation: unipolar Drain-source voltage: 40V Type of transistor: N-MOSFET Gate charge: 16.2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 258A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M9R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W Application: automotive industry Mounting: SMD Drain-source voltage: 40V Drain current: 38.5A On-state resistance: 23.3mΩ Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24nC Kind of channel: enhanced Pulsed drain current: 218A Case: LFPAK33; SOT1210 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y09-40B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 53A Pulsed drain current: 300A Power dissipation: 105.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 19mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y104-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.48A Pulsed drain current: 59A Power dissipation: 59W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y11-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59.3A Pulsed drain current: 336A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 27.6mΩ Mounting: SMD Gate charge: 44.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y113-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.5A Pulsed drain current: 48A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 312mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y12-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36.7A Pulsed drain current: 208A Power dissipation: 65W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 24.1mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y15-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 274A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 45.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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 |
BUK9Y19-75B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 34.1A Pulsed drain current: 192A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 48mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1382 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9Y1R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y1R6-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 294W Polarisation: unipolar Kind of package: reel; tape Gate charge: 107.8nC Kind of channel: enhanced Pulsed drain current: 600A Drain-source voltage: 40V Drain current: 120A On-state resistance: 4.8mΩ Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y1R9-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 217W Polarisation: unipolar Kind of package: reel; tape Gate charge: 93nC Kind of channel: enhanced Pulsed drain current: 600A Drain-source voltage: 40V Drain current: 120A On-state resistance: 5.7mΩ Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y22-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 197A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 60.7mΩ Mounting: SMD Gate charge: 35.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y2R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 163W Polarisation: unipolar Kind of package: reel; tape Gate charge: 78.2nC Kind of channel: enhanced Pulsed drain current: 600A Drain-source voltage: 40V Drain current: 120A On-state resistance: 7mΩ Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y2R8-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 172W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC Kind of channel: enhanced Pulsed drain current: 600A Drain-source voltage: 40V Drain current: 120A On-state resistance: 8.6mΩ Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y3R5-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 591A Power dissipation: 167W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 30.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y4R8-60E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 593A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 54.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y6R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 284A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y72-80E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 10.7A Pulsed drain current: 61A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 196mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y7R0-60ELX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 108A Pulsed drain current: 612A Power dissipation: 238.4W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 152nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y7R2-60E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 72A Pulsed drain current: 405A Power dissipation: 167W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y7R6-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 315A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y8R5-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Pulsed drain current: 423A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 54.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
| BUK9K35-60RAX |
|
Hersteller: NEXPERIA
BUK9K35-60RAX Multi channel transistors
BUK9K35-60RAX Multi channel transistors
Produkt ist nicht verfügbar
| BUK9K45-100E,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1261 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.39 EUR |
| 58+ | 1.24 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1.02 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.97 EUR |
| BUK9K52-60RAX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 64A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 64A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9K5R1-30EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 329A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 26.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 329A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 26.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9K5R6-30EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 305A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 305A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 305A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 305A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9K6R8-40EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 265A
Power dissipation: 64W
Case: LFPAK56D; SOT1205
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 265A
Power dissipation: 64W
Case: LFPAK56D; SOT1205
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9K89-100E,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9K8R7-40EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 211A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 211A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M10-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M11-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M11-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 193A
Power dissipation: 50W
Case: LFPAK33; SOT1210
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 193A
Power dissipation: 50W
Case: LFPAK33; SOT1210
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M12-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M120-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.1A; Idm: 46A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.1A
Pulsed drain current: 46A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.1A; Idm: 46A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.1A
Pulsed drain current: 46A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M14-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M15-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M15-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M156-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M17-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M19-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 62W
Gate charge: 13.8nC
Kind of channel: enhanced
Pulsed drain current: 152A
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 26.8A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 62W
Gate charge: 13.8nC
Kind of channel: enhanced
Pulsed drain current: 152A
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 26.8A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M20-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M23-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M24-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M28-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 92+ | 0.79 EUR |
| 102+ | 0.71 EUR |
| 128+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 1000+ | 0.52 EUR |
| 1500+ | 0.51 EUR |
| BUK9M35-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M3R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M42-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M43-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M4R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M5R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M5R2-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63A
Pulsed drain current: 358A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63A
Pulsed drain current: 358A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M67-60ELX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M6R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M6R6-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 30V
Drain current: 54.7A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 75W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 309A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 30V
Drain current: 54.7A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 75W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 309A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M6R7-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M7R2-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M85-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M8R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M9R1-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W
Power dissipation: 75W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
On-state resistance: 18.1mΩ
Drain current: 45.5A
Polarisation: unipolar
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate charge: 16.2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 258A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W
Power dissipation: 75W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
On-state resistance: 18.1mΩ
Drain current: 45.5A
Polarisation: unipolar
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate charge: 16.2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 258A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M9R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 23.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 23.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y09-40B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y104-100B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.48A
Pulsed drain current: 59A
Power dissipation: 59W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.48A
Pulsed drain current: 59A
Power dissipation: 59W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y11-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59.3A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 44.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59.3A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 44.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y113-100E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 312mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 312mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y12-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36.7A
Pulsed drain current: 208A
Power dissipation: 65W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36.7A
Pulsed drain current: 208A
Power dissipation: 65W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y15-100E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 45.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 45.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y19-75B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1382 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 45+ | 1.62 EUR |
| 55+ | 1.32 EUR |
| 73+ | 0.99 EUR |
| 76+ | 0.94 EUR |
| 500+ | 0.92 EUR |
| BUK9Y1R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y1R6-40HX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 107.8nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.8mΩ
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 107.8nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.8mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y1R9-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 217W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 5.7mΩ
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 217W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 5.7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y22-100E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y2R4-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 163W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 78.2nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 7mΩ
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 163W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 78.2nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y2R8-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 172W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 172W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y3R5-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 591A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 30.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 591A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 30.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y4R8-60E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y6R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 284A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 284A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y72-80E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10.7A
Pulsed drain current: 61A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 196mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10.7A
Pulsed drain current: 61A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 196mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y7R0-60ELX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 612A
Power dissipation: 238.4W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 152nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 612A
Power dissipation: 238.4W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 152nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y7R2-60E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 72A
Pulsed drain current: 405A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 72A
Pulsed drain current: 405A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y7R6-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y8R5-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 54.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 54.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar