| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| BSP60,115 | NEXPERIA |
BSP60.115 PNP SMD Darlington transistors |
auf Bestellung 839 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP61,115 | NEXPERIA |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.25W; SC73,SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.25W Case: SC73; SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1384 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP62,115 | NEXPERIA |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.25W; SC73,SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.25W Case: SC73; SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 522 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP89,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SC73,SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.375A Power dissipation: 1.5W Case: SC73; SOT223 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSR14,215 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1769 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR16,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB Case: SOT23; TO236AB Polarisation: bipolar Mounting: SMD Type of transistor: PNP Collector current: 0.6A Power dissipation: 0.25W Pulsed collector current: 0.8A Collector-emitter voltage: 60V Current gain: 50...300 Frequency: 200MHz Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSR19A,215 | NEXPERIA |
BSR19A.215 NPN SMD transistors |
auf Bestellung 2611 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR33,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1611 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR41,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 2A Current gain: 30...300 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 709 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR43,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN Kind of package: reel; tape Case: SC62; SOT89 Mounting: SMD Collector current: 1A Power dissipation: 1.35W Current gain: 30...300 Collector-emitter voltage: 80V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 954 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Power dissipation: 0.25W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1120 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138AKAR | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.125A Power dissipation: 0.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.51nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BK,215 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.35W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS138BKS,115 | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.32W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS138BKW,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 939 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138P,215 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.35W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS138PS,115 | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2947 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS63,215 | NEXPERIA |
BSS63.215 PNP SMD transistors |
auf Bestellung 2499 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84,215 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.13A Power dissipation: 0.25W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS84AK,215 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -120mA Power dissipation: 0.42W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS84AKS,115 | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.1A Power dissipation: 445mW Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 958 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84AKW,115 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.095A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.35nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8952 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSS87,115 | NEXPERIA |
BSS87.115 SMD N channel transistors |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| BST39,115 | NEXPERIA |
BST39.115 NPN SMD transistors |
auf Bestellung 885 Stücke: Lieferzeit 7-14 Tag (e) |
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| BST50,115 | NEXPERIA |
BST50.115 NPN SMD Darlington transistors |
auf Bestellung 1043 Stücke: Lieferzeit 7-14 Tag (e) |
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| BST51,115 | NEXPERIA |
BST51.115 NPN SMD Darlington transistors |
auf Bestellung 852 Stücke: Lieferzeit 7-14 Tag (e) |
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| BST52,115 | NEXPERIA |
BST52.115 NPN SMD Darlington transistors |
auf Bestellung 980 Stücke: Lieferzeit 7-14 Tag (e) |
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| BST62,115 | NEXPERIA |
BST62.115 PNP SMD Darlington transistors |
auf Bestellung 286 Stücke: Lieferzeit 7-14 Tag (e) |
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BST82,215 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.19A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36745 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSV52,215 | NEXPERIA |
BSV52.215 NPN SMD transistors |
auf Bestellung 1920 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK4D38-20PX | NEXPERIA |
BUK4D38-20PX SMD P channel transistors |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK6D43-60EX | NEXPERIA |
BUK6D43-60EX SMD N channel transistors |
auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK6Y14-40PX | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: P-MOSFET Mounting: SMD Pulsed drain current: -257A Drain current: -46A Drain-source voltage: -40V Gate charge: 64nC On-state resistance: 25mΩ Power dissipation: 110W Gate-source voltage: ±20V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK78150-55A/CUF | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223 Kind of package: reel; tape Application: automotive industry Mounting: SMD Case: SC73; SOT223 Kind of channel: enhancement Type of transistor: N-MOSFET On-state resistance: 278mΩ Drain current: 3.8A Power dissipation: 8W Gate-source voltage: ±20V Pulsed drain current: 22A Drain-source voltage: 55V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3070 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK78150-55A/CUX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223 Kind of package: reel; tape Application: automotive industry Mounting: SMD Case: SC73; SOT223 Kind of channel: enhancement Type of transistor: N-MOSFET On-state resistance: 278mΩ Drain current: 3.8A Power dissipation: 8W Pulsed drain current: 22A Drain-source voltage: 55V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 725 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK7M33-60EX | NEXPERIA |
BUK7M33-60EX SMD N channel transistors |
auf Bestellung 6624 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK7M6R3-40EX | NEXPERIA |
BUK7M6R3-40EX SMD N channel transistors |
auf Bestellung 1491 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7Y14-80EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 259A Drain current: 46A Drain-source voltage: 80V Gate charge: 44.8nC On-state resistance: 35.1mΩ Power dissipation: 147W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1397 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7Y72-80EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 63A Drain current: 11A Drain-source voltage: 80V Gate charge: 9.8nC On-state resistance: 181mΩ Power dissipation: 45W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1400 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7Y7R0-40HX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 272A Drain current: 48A Drain-source voltage: 40V Gate charge: 26nC On-state resistance: 13.6mΩ Power dissipation: 64W Gate-source voltage: ±20V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1480 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7Y7R6-40EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Drain current: 56A Drain-source voltage: 40V Gate charge: 26.2nC On-state resistance: 7.6mΩ Power dissipation: 94.3W Gate-source voltage: ±20V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7Y8R7-60EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 347A Drain current: 61A Drain-source voltage: 60V Gate charge: 46nC On-state resistance: 19.5mΩ Power dissipation: 147W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 853 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9616-75B,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: logic level Type of transistor: N-MOSFET Kind of package: reel; tape Gate charge: 35nC On-state resistance: 34mΩ Gate-source voltage: ±15V Drain current: 47A Drain-source voltage: 75V Power dissipation: 157W Pulsed drain current: 270A Case: D2PAK; SOT404 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 724 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9640-100A,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 159A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 159A Power dissipation: 158W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 663 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK98150-55A/CUF | NEXPERIA |
BUK98150-55A/CUF SMD N channel transistors |
auf Bestellung 2513 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK98180-100A/CUX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 18A; 8W; SC73,SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 18A Power dissipation: 8W Case: SC73; SOT223 On-state resistance: 389mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 502 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9832-55A/CUX | NEXPERIA |
BUK9832-55A/CUX SMD N channel transistors |
auf Bestellung 792 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9875-100A/CUX | NEXPERIA |
BUK9875-100A/CUX SMD N channel transistors |
auf Bestellung 898 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9880-55A/CUX | NEXPERIA |
BUK9880-55A/CUX SMD N channel transistors |
auf Bestellung 979 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9K45-100E,115 | NEXPERIA |
BUK9K45-100E.115 Multi channel transistors |
auf Bestellung 1126 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9M24-40EX | NEXPERIA |
BUK9M24-40EX SMD N channel transistors |
auf Bestellung 1465 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9M28-80EX | NEXPERIA |
BUK9M28-80EX SMD N channel transistors |
auf Bestellung 1300 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9Y19-55B,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 184A Drain current: 46A Drain-source voltage: 55V Gate charge: 18nC On-state resistance: 17.3mΩ Power dissipation: 85W Gate-source voltage: ±15V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 817 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9Y19-75B,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 192A Drain current: 34.1A Drain-source voltage: 75V Gate charge: 30nC On-state resistance: 48mΩ Power dissipation: 106W Gate-source voltage: ±15V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 925 Stücke: Lieferzeit 7-14 Tag (e) |
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BZA456A,115 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD Type of diode: TVS array Max. forward impulse current: 3.75A Peak pulse power dissipation: 24W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC74; SOT457; TSOP6 Max. off-state voltage: 5.6V Number of channels: 4 Version: ESD Kind of package: reel; tape Leakage current: 2µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5920 Stücke: Lieferzeit 7-14 Tag (e) |
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BZA856A,115 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD Type of diode: TVS array Max. forward impulse current: 3.75A Peak pulse power dissipation: 24W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A; SOT353 Max. off-state voltage: 5.6V Number of channels: 4 Version: ESD Kind of package: reel; tape Leakage current: 2µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| BZB784-C12,115 | NEXPERIA |
BZB784-C12.115 SMD Zener diodes |
auf Bestellung 420 Stücke: Lieferzeit 7-14 Tag (e) |
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BZB784-C15,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Kind of package: reel; tape Case: SOT323 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Leakage current: 50nA Max. load current: 0.2A Max. forward voltage: 0.9V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2860 Stücke: Lieferzeit 7-14 Tag (e) |
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| BZB784-C3V3,115 | NEXPERIA |
BZB784-C3V3.115 SMD Zener diodes |
auf Bestellung 1990 Stücke: Lieferzeit 7-14 Tag (e) |
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BZB784-C3V9,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 3.8V; SMD; reel,tape; SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: common anode; double Leakage current: 3µA Max. load current: 0.2A Max. forward voltage: 0.9V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2749 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSP60,115 |
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Hersteller: NEXPERIA
BSP60.115 PNP SMD Darlington transistors
BSP60.115 PNP SMD Darlington transistors
auf Bestellung 839 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 269+ | 0.27 EUR |
| 285+ | 0.25 EUR |
| BSP61,115 |
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Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.25W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.25W
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.25W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.25W
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1384 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.54 EUR |
| 58+ | 1.24 EUR |
| 80+ | 0.9 EUR |
| BSP62,115 |
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Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.25W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.25W
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.25W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.25W
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 522 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 59+ | 1.22 EUR |
| 89+ | 0.81 EUR |
| BSP89,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.375A
Power dissipation: 1.5W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.375A
Power dissipation: 1.5W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSR14,215 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1769 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 97+ | 0.74 EUR |
| 136+ | 0.53 EUR |
| BSR16,215 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.6A
Power dissipation: 0.25W
Pulsed collector current: 0.8A
Collector-emitter voltage: 60V
Current gain: 50...300
Frequency: 200MHz
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.6A
Power dissipation: 0.25W
Pulsed collector current: 0.8A
Collector-emitter voltage: 60V
Current gain: 50...300
Frequency: 200MHz
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| BSR19A,215 |
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Hersteller: NEXPERIA
BSR19A.215 NPN SMD transistors
BSR19A.215 NPN SMD transistors
auf Bestellung 2611 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 102+ | 0.7 EUR |
| 500+ | 0.21 EUR |
| 516+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| BSR33,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1611 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 56+ | 1.29 EUR |
| 100+ | 0.73 EUR |
| BSR41,115 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Current gain: 30...300
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Current gain: 30...300
Anzahl je Verpackung: 1 Stücke
auf Bestellung 709 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 81+ | 0.89 EUR |
| 112+ | 0.64 EUR |
| BSR43,115 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SC62; SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1.35W
Current gain: 30...300
Collector-emitter voltage: 80V
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SC62; SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1.35W
Current gain: 30...300
Collector-emitter voltage: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 954 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 130+ | 0.55 EUR |
| 167+ | 0.43 EUR |
| BSS123,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1120 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 500+ | 0.14 EUR |
| 650+ | 0.11 EUR |
| BSS138AKAR |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.125A
Power dissipation: 0.36W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 0.51nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.125A
Power dissipation: 0.36W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 0.51nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.2 EUR |
| BSS138BK,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138BKS,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.32W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.32W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138BKW,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 939 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 550+ | 0.13 EUR |
| 875+ | 0.082 EUR |
| 939+ | 0.076 EUR |
| 1000+ | 0.072 EUR |
| BSS138P,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138PS,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2947 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 371+ | 0.19 EUR |
| 569+ | 0.13 EUR |
| 667+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 893+ | 0.08 EUR |
| 1000+ | 0.076 EUR |
| BSS63,215 |
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Hersteller: NEXPERIA
BSS63.215 PNP SMD transistors
BSS63.215 PNP SMD transistors
auf Bestellung 2499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 202+ | 0.35 EUR |
| 730+ | 0.098 EUR |
| 1099+ | 0.065 EUR |
| 1163+ | 0.061 EUR |
| BSS84,215 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS84AK,215 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -120mA
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -120mA
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS84AKS,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.1A
Power dissipation: 445mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.1A
Power dissipation: 445mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 958 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 432+ | 0.17 EUR |
| 622+ | 0.11 EUR |
| 769+ | 0.093 EUR |
| 861+ | 0.083 EUR |
| 932+ | 0.077 EUR |
| 1000+ | 0.073 EUR |
| BSS84AKW,115 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.095A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.095A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.35nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8952 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 642+ | 0.11 EUR |
| 962+ | 0.074 EUR |
| 1292+ | 0.055 EUR |
| 1421+ | 0.05 EUR |
| 1534+ | 0.047 EUR |
| 1624+ | 0.044 EUR |
| BSS87,115 |
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Hersteller: NEXPERIA
BSS87.115 SMD N channel transistors
BSS87.115 SMD N channel transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 77+ | 0.93 EUR |
| 211+ | 0.34 EUR |
| 1000+ | 0.2 EUR |
| BST39,115 |
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Hersteller: NEXPERIA
BST39.115 NPN SMD transistors
BST39.115 NPN SMD transistors
auf Bestellung 885 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 229+ | 0.31 EUR |
| 242+ | 0.3 EUR |
| BST50,115 |
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Hersteller: NEXPERIA
BST50.115 NPN SMD Darlington transistors
BST50.115 NPN SMD Darlington transistors
auf Bestellung 1043 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 86+ | 0.84 EUR |
| 193+ | 0.37 EUR |
| 204+ | 0.35 EUR |
| BST51,115 |
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Hersteller: NEXPERIA
BST51.115 NPN SMD Darlington transistors
BST51.115 NPN SMD Darlington transistors
auf Bestellung 852 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 86+ | 0.84 EUR |
| 261+ | 0.27 EUR |
| 277+ | 0.26 EUR |
| BST52,115 |
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Hersteller: NEXPERIA
BST52.115 NPN SMD Darlington transistors
BST52.115 NPN SMD Darlington transistors
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 111+ | 0.65 EUR |
| 195+ | 0.37 EUR |
| 206+ | 0.35 EUR |
| BST62,115 |
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Hersteller: NEXPERIA
BST62.115 PNP SMD Darlington transistors
BST62.115 PNP SMD Darlington transistors
auf Bestellung 286 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.21 EUR |
| 206+ | 0.35 EUR |
| 218+ | 0.33 EUR |
| BST82,215 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36745 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 97+ | 0.74 EUR |
| 117+ | 0.62 EUR |
| BSV52,215 |
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Hersteller: NEXPERIA
BSV52.215 NPN SMD transistors
BSV52.215 NPN SMD transistors
auf Bestellung 1920 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 283+ | 0.25 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| BUK4D38-20PX |
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Hersteller: NEXPERIA
BUK4D38-20PX SMD P channel transistors
BUK4D38-20PX SMD P channel transistors
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| BUK6D43-60EX |
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Hersteller: NEXPERIA
BUK6D43-60EX SMD N channel transistors
BUK6D43-60EX SMD N channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |
| BUK6Y14-40PX |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: P-MOSFET
Mounting: SMD
Pulsed drain current: -257A
Drain current: -46A
Drain-source voltage: -40V
Gate charge: 64nC
On-state resistance: 25mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: P-MOSFET
Mounting: SMD
Pulsed drain current: -257A
Drain current: -46A
Drain-source voltage: -40V
Gate charge: 64nC
On-state resistance: 25mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 42+ | 1.73 EUR |
| 100+ | 1.17 EUR |
| BUK78150-55A/CUF |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Kind of package: reel; tape
Application: automotive industry
Mounting: SMD
Case: SC73; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 278mΩ
Drain current: 3.8A
Power dissipation: 8W
Gate-source voltage: ±20V
Pulsed drain current: 22A
Drain-source voltage: 55V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Kind of package: reel; tape
Application: automotive industry
Mounting: SMD
Case: SC73; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 278mΩ
Drain current: 3.8A
Power dissipation: 8W
Gate-source voltage: ±20V
Pulsed drain current: 22A
Drain-source voltage: 55V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3070 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 232+ | 0.31 EUR |
| 350+ | 0.2 EUR |
| BUK78150-55A/CUX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Kind of package: reel; tape
Application: automotive industry
Mounting: SMD
Case: SC73; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 278mΩ
Drain current: 3.8A
Power dissipation: 8W
Pulsed drain current: 22A
Drain-source voltage: 55V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Kind of package: reel; tape
Application: automotive industry
Mounting: SMD
Case: SC73; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 278mΩ
Drain current: 3.8A
Power dissipation: 8W
Pulsed drain current: 22A
Drain-source voltage: 55V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 725 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 288+ | 0.25 EUR |
| 309+ | 0.23 EUR |
| BUK7M33-60EX |
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Hersteller: NEXPERIA
BUK7M33-60EX SMD N channel transistors
BUK7M33-60EX SMD N channel transistors
auf Bestellung 6624 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 171+ | 0.42 EUR |
| 181+ | 0.4 EUR |
| BUK7M6R3-40EX |
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Hersteller: NEXPERIA
BUK7M6R3-40EX SMD N channel transistors
BUK7M6R3-40EX SMD N channel transistors
auf Bestellung 1491 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.71 EUR |
| BUK7Y14-80EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 259A
Drain current: 46A
Drain-source voltage: 80V
Gate charge: 44.8nC
On-state resistance: 35.1mΩ
Power dissipation: 147W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 259A
Drain current: 46A
Drain-source voltage: 80V
Gate charge: 44.8nC
On-state resistance: 35.1mΩ
Power dissipation: 147W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1397 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 65+ | 1.1 EUR |
| 72+ | 1 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.89 EUR |
| 500+ | 0.79 EUR |
| BUK7Y72-80EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 63A
Drain current: 11A
Drain-source voltage: 80V
Gate charge: 9.8nC
On-state resistance: 181mΩ
Power dissipation: 45W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 63A
Drain current: 11A
Drain-source voltage: 80V
Gate charge: 9.8nC
On-state resistance: 181mΩ
Power dissipation: 45W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 72+ | 1.01 EUR |
| 84+ | 0.86 EUR |
| BUK7Y7R0-40HX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 272A
Drain current: 48A
Drain-source voltage: 40V
Gate charge: 26nC
On-state resistance: 13.6mΩ
Power dissipation: 64W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 272A
Drain current: 48A
Drain-source voltage: 40V
Gate charge: 26nC
On-state resistance: 13.6mΩ
Power dissipation: 64W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 79+ | 0.92 EUR |
| 88+ | 0.82 EUR |
| 105+ | 0.69 EUR |
| 250+ | 0.61 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.54 EUR |
| BUK7Y7R6-40EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 56A
Drain-source voltage: 40V
Gate charge: 26.2nC
On-state resistance: 7.6mΩ
Power dissipation: 94.3W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 56A
Drain-source voltage: 40V
Gate charge: 26.2nC
On-state resistance: 7.6mΩ
Power dissipation: 94.3W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 70+ | 1.03 EUR |
| 100+ | 0.93 EUR |
| BUK7Y8R7-60EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 347A
Drain current: 61A
Drain-source voltage: 60V
Gate charge: 46nC
On-state resistance: 19.5mΩ
Power dissipation: 147W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 347A
Drain current: 61A
Drain-source voltage: 60V
Gate charge: 46nC
On-state resistance: 19.5mΩ
Power dissipation: 147W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 853 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 34+ | 2.14 EUR |
| 43+ | 1.69 EUR |
| 100+ | 1.52 EUR |
| 250+ | 1.42 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.22 EUR |
| BUK9616-75B,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 35nC
On-state resistance: 34mΩ
Gate-source voltage: ±15V
Drain current: 47A
Drain-source voltage: 75V
Power dissipation: 157W
Pulsed drain current: 270A
Case: D2PAK; SOT404
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 35nC
On-state resistance: 34mΩ
Gate-source voltage: ±15V
Drain current: 47A
Drain-source voltage: 75V
Power dissipation: 157W
Pulsed drain current: 270A
Case: D2PAK; SOT404
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 724 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.45 EUR |
| 23+ | 3.12 EUR |
| 26+ | 2.76 EUR |
| BUK9640-100A,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 159A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 159A
Power dissipation: 158W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 159A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 159A
Power dissipation: 158W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 663 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.89 EUR |
| 20+ | 3.66 EUR |
| 100+ | 3.29 EUR |
| BUK98150-55A/CUF |
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Hersteller: NEXPERIA
BUK98150-55A/CUF SMD N channel transistors
BUK98150-55A/CUF SMD N channel transistors
auf Bestellung 2513 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 266+ | 0.27 EUR |
| 281+ | 0.25 EUR |
| BUK98180-100A/CUX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 18A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 18A
Power dissipation: 8W
Case: SC73; SOT223
On-state resistance: 389mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 18A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 18A
Power dissipation: 8W
Case: SC73; SOT223
On-state resistance: 389mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 502 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 78+ | 0.93 EUR |
| 94+ | 0.77 EUR |
| BUK9832-55A/CUX |
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Hersteller: NEXPERIA
BUK9832-55A/CUX SMD N channel transistors
BUK9832-55A/CUX SMD N channel transistors
auf Bestellung 792 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 108+ | 0.66 EUR |
| 135+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| BUK9875-100A/CUX |
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Hersteller: NEXPERIA
BUK9875-100A/CUX SMD N channel transistors
BUK9875-100A/CUX SMD N channel transistors
auf Bestellung 898 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.91 EUR |
| 175+ | 0.41 EUR |
| 186+ | 0.39 EUR |
| BUK9880-55A/CUX |
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Hersteller: NEXPERIA
BUK9880-55A/CUX SMD N channel transistors
BUK9880-55A/CUX SMD N channel transistors
auf Bestellung 979 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| 200+ | 0.39 EUR |
| 226+ | 0.32 EUR |
| 240+ | 0.3 EUR |
| BUK9K45-100E,115 |
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Hersteller: NEXPERIA
BUK9K45-100E.115 Multi channel transistors
BUK9K45-100E.115 Multi channel transistors
auf Bestellung 1126 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.9 EUR |
| 66+ | 1.08 EUR |
| 70+ | 1.03 EUR |
| BUK9M24-40EX |
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Hersteller: NEXPERIA
BUK9M24-40EX SMD N channel transistors
BUK9M24-40EX SMD N channel transistors
auf Bestellung 1465 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 86+ | 0.84 EUR |
| 304+ | 0.24 EUR |
| 321+ | 0.22 EUR |
| BUK9M28-80EX |
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Hersteller: NEXPERIA
BUK9M28-80EX SMD N channel transistors
BUK9M28-80EX SMD N channel transistors
auf Bestellung 1300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 127+ | 0.57 EUR |
| 134+ | 0.53 EUR |
| BUK9Y19-55B,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 184A
Drain current: 46A
Drain-source voltage: 55V
Gate charge: 18nC
On-state resistance: 17.3mΩ
Power dissipation: 85W
Gate-source voltage: ±15V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; Idm: 184A; 85W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 184A
Drain current: 46A
Drain-source voltage: 55V
Gate charge: 18nC
On-state resistance: 17.3mΩ
Power dissipation: 85W
Gate-source voltage: ±15V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 817 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 86+ | 0.84 EUR |
| 96+ | 0.75 EUR |
| 103+ | 0.7 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.59 EUR |
| BUK9Y19-75B,115 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 192A
Drain current: 34.1A
Drain-source voltage: 75V
Gate charge: 30nC
On-state resistance: 48mΩ
Power dissipation: 106W
Gate-source voltage: ±15V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 192A
Drain current: 34.1A
Drain-source voltage: 75V
Gate charge: 30nC
On-state resistance: 48mΩ
Power dissipation: 106W
Gate-source voltage: ±15V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 925 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 54+ | 1.34 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.12 EUR |
| 250+ | 1.07 EUR |
| 500+ | 0.97 EUR |
| BZA456A,115 |
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Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.6V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 2µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.6V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 2µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5920 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 264+ | 0.27 EUR |
| 300+ | 0.24 EUR |
| 336+ | 0.21 EUR |
| 400+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| BZA856A,115 |
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Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A; SOT353
Max. off-state voltage: 5.6V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 2µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; Ch: 4; ESD
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A; SOT353
Max. off-state voltage: 5.6V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 2µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 210+ | 0.34 EUR |
| 256+ | 0.28 EUR |
| 305+ | 0.23 EUR |
| 407+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| BZB784-C12,115 |
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Hersteller: NEXPERIA
BZB784-C12.115 SMD Zener diodes
BZB784-C12.115 SMD Zener diodes
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 420+ | 0.17 EUR |
| 728+ | 0.099 EUR |
| BZB784-C15,115 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. load current: 0.2A
Max. forward voltage: 0.9V
Anzahl je Verpackung: 1 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. load current: 0.2A
Max. forward voltage: 0.9V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2860 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 544+ | 0.13 EUR |
| 632+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 1069+ | 0.067 EUR |
| 1202+ | 0.059 EUR |
| 1279+ | 0.056 EUR |
| BZB784-C3V3,115 |
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Hersteller: NEXPERIA
BZB784-C3V3.115 SMD Zener diodes
BZB784-C3V3.115 SMD Zener diodes
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 729+ | 0.098 EUR |
| 1484+ | 0.048 EUR |
| 1568+ | 0.046 EUR |
| BZB784-C3V9,115 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.8V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Leakage current: 3µA
Max. load current: 0.2A
Max. forward voltage: 0.9V
Anzahl je Verpackung: 1 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.8V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: common anode; double
Leakage current: 3µA
Max. load current: 0.2A
Max. forward voltage: 0.9V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2749 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 325+ | 0.22 EUR |
| 374+ | 0.19 EUR |





















