| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BUK7D36-60EX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W Kind of package: reel; tape On-state resistance: 76mΩ Drain current: 8.9A Drain-source voltage: 60V Case: DFN6; SOT1220 Gate charge: 14nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 56A Application: automotive industry Power dissipation: 15W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7E3R5-60E,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Kind of package: tube On-state resistance: 7.6mΩ Drain current: 120A Drain-source voltage: 60V Case: I2PAK; SOT226 Gate charge: 114nC Mounting: THT Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 785A Application: automotive industry Power dissipation: 293W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7J1R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; Idm: 600A; 500W Kind of package: reel; tape On-state resistance: 2.18mΩ Drain current: 220A Drain-source voltage: 40V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 131nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 600A Application: automotive industry Power dissipation: 500W Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7J1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Kind of package: reel; tape On-state resistance: 1.4mΩ Drain current: 190A Drain-source voltage: 40V Case: LFPAK56E; PowerSO8; SOT1023 Gate charge: 103nC Mounting: SMD Technology: Trench Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 600A Application: automotive industry Power dissipation: 395W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K12-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 34.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 228A Drain-source voltage: 60V Drain current: 40A On-state resistance: 20.8mΩ Type of transistor: N-MOSFET x2 Power dissipation: 68W Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K13-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 30.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 213A Drain-source voltage: 60V Drain current: 38A On-state resistance: 22mΩ Type of transistor: N-MOSFET x2 Power dissipation: 64W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K134-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W Kind of package: reel; tape On-state resistance: 335mΩ Drain current: 6.9A Drain-source voltage: 100V Case: LFPAK33; SOT1210 Gate charge: 10.5nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Pulsed drain current: 39A Application: automotive industry Power dissipation: 32W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K15-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W Mounting: SMD Case: LFPAK56D; SOT1205 Application: automotive industry Kind of package: reel; tape Gate charge: 35.1nC Kind of channel: enhanced Pulsed drain current: 92A Drain-source voltage: 80V Drain current: 16A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 68W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K17-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 32.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 84A Drain-source voltage: 80V Drain current: 15A On-state resistance: 42mΩ Type of transistor: N-MOSFET x2 Power dissipation: 64W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K18-40EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 11.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 127A Drain-source voltage: 40V Drain current: 22A On-state resistance: 37.4mΩ Type of transistor: N-MOSFET x2 Power dissipation: 38W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K23-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 22.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 68A Drain-source voltage: 80V Drain current: 12A On-state resistance: 58mΩ Type of transistor: N-MOSFET x2 Power dissipation: 53W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K29-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 22A; Idm: 126A; 68W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 38.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 126A Drain-source voltage: 100V Drain current: 22A On-state resistance: 68mΩ Type of transistor: N-MOSFET x2 Power dissipation: 68W Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K32-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 116A Drain-source voltage: 100V Drain current: 20.4A On-state resistance: 76mΩ Type of transistor: N-MOSFET x2 Power dissipation: 64W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K35-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 17A; Idm: 95A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 95A Drain-source voltage: 60V Drain current: 17A On-state resistance: 67mΩ Type of transistor: N-MOSFET x2 Power dissipation: 38W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K45-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W Mounting: SMD Case: LFPAK56D; SOT1205 Application: automotive industry Kind of package: reel; tape Gate charge: 25.9nC Kind of channel: enhanced Pulsed drain current: 84A Drain-source voltage: 100V Drain current: 15A On-state resistance: 0.104Ω Type of transistor: N-MOSFET x2 Power dissipation: 53W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K52-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W Mounting: SMD Case: LFPAK33; SOT1210 Application: automotive industry Kind of package: reel; tape Gate charge: 9.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 71A Drain-source voltage: 60V Drain current: 12.6A On-state resistance: 101mΩ Type of transistor: N-MOSFET x2 Power dissipation: 32W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K5R1-30E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 340A; 68W Kind of package: reel; tape On-state resistance: 9.4mΩ Drain current: 40A Drain-source voltage: 30V Case: LFPAK33; SOT1210 Gate charge: 31.1nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Pulsed drain current: 340A Application: automotive industry Power dissipation: 68W Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7K5R6-30E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W Kind of package: reel; tape On-state resistance: 10.3mΩ Drain current: 40A Drain-source voltage: 30V Case: LFPAK33; SOT1210 Gate charge: 29.7nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Pulsed drain current: 314A Application: automotive industry Power dissipation: 64W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M11-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Kind of package: reel; tape On-state resistance: 21.3mΩ Drain current: 34A Drain-source voltage: 40V Case: LFPAK33; SOT1210 Gate charge: 16nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 193A Application: automotive industry Power dissipation: 50W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M12-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W Kind of package: reel; tape On-state resistance: 23.6mΩ Drain current: 34A Drain-source voltage: 40V Case: LFPAK33; SOT1210 Gate charge: 15.8nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 192A Application: automotive industry Power dissipation: 55W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 211A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M15-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.4A Pulsed drain current: 155A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 29.1mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M19-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W Mounting: SMD Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Power dissipation: 55W Gate charge: 17.3nC Kind of channel: enhanced Pulsed drain current: 143A Case: LFPAK33; SOT1210 Drain-source voltage: 60V Drain current: 25.3A On-state resistance: 42mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M20-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 125A Power dissipation: 38W Case: LFPAK33; SOT1210 On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M21-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M22-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W Kind of package: reel; tape On-state resistance: 55mΩ Drain current: 26A Drain-source voltage: 80V Case: LFPAK33; SOT1210 Gate charge: 23.9nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 147A Application: automotive industry Power dissipation: 75W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M27-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 21.3A Pulsed drain current: 121A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7M33-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W Kind of package: reel; tape On-state resistance: 74mΩ Drain current: 17A Drain-source voltage: 60V Case: LFPAK33; SOT1210 Gate charge: 10.9nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 98A Application: automotive industry Power dissipation: 44W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6644 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK7M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 78A Power dissipation: 36W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M45-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 13A Pulsed drain current: 77A Power dissipation: 31W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 89mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M4R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M5R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61.7A Pulsed drain current: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 On-state resistance: 10.9mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7M6R3-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W Kind of package: reel; tape On-state resistance: 12.5mΩ Drain current: 56.4A Drain-source voltage: 40V Case: LFPAK33; SOT1210 Gate charge: 28.1nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 319A Application: automotive industry Power dissipation: 79W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1497 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK7M6R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 On-state resistance: 13mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M8R0-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48.8A Pulsed drain current: 276A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 15.8mΩ Mounting: SMD Gate charge: 23.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M9R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W Application: automotive industry Mounting: SMD Drain-source voltage: 40V Drain current: 38.5A On-state resistance: 18.4mΩ Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhanced Pulsed drain current: 218A Case: LFPAK33; SOT1210 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M9R9-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 240A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7S0R7-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 425A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| BUK7S1R0-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 325A Pulsed drain current: 1659A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 137nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| BUK7S1R5-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W Kind of package: reel; tape On-state resistance: 3.27mΩ Drain current: 260A Drain-source voltage: 40V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 93nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 1088A Application: automotive industry Power dissipation: 242W Polarisation: unipolar Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| BUK7V4R2-40HX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 85W Application: automotive industry On-state resistance: 8.8mΩ Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 37nC Gate-source voltage: ±20V Pulsed drain current: 393A Kind of channel: enhanced Drain-source voltage: 40V Drain current: 69.5A Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y08-40B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 58.85A Pulsed drain current: 332A Power dissipation: 105W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 36.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y102-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.6A Pulsed drain current: 60A Power dissipation: 60W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 265mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y113-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Kind of package: reel; tape On-state resistance: 313mΩ Drain current: 8.5A Drain-source voltage: 100V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 10.4nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 48A Application: automotive industry Power dissipation: 45W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y12-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 210A; 65W Kind of package: reel; tape On-state resistance: 23.6mΩ Drain current: 37A Drain-source voltage: 40V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 15nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 210A Application: automotive industry Power dissipation: 65W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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 |
BUK7Y14-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W Kind of package: reel; tape On-state resistance: 35.1mΩ Drain current: 46A Drain-source voltage: 80V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 44.8nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 259A Application: automotive industry Power dissipation: 147W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1437 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK7Y15-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 274A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 41.5mΩ Mounting: SMD Gate charge: 54.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y153-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.7A Pulsed drain current: 37.5A Power dissipation: 37.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 424mΩ Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y19-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Power dissipation: 169W Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 225A Drain-source voltage: 100V Drain current: 40A On-state resistance: 52.6mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK33; SOT1210 On-state resistance: 3.05mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y1R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 294W Polarisation: unipolar Kind of package: reel; tape Gate charge: 96nC Kind of channel: enhanced Pulsed drain current: 600A Drain-source voltage: 40V Drain current: 120A On-state resistance: 3.7mΩ Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y21-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 132A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y22-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W Kind of package: reel; tape On-state resistance: 61mΩ Drain current: 35A Drain-source voltage: 100V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 47nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 196A Application: automotive industry Power dissipation: 147W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y25-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 64W Kind of package: reel; tape On-state resistance: 56mΩ Drain current: 24A Drain-source voltage: 60V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 16.1nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 136A Application: automotive industry Power dissipation: 64W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y25-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 27.5A Pulsed drain current: 156A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 62.75mΩ Mounting: SMD Gate charge: 25.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y28-75B,115 | NEXPERIA |
BUK7Y28-75B.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| BUK7Y29-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 102A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 57.1mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y2R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W Kind of package: reel; tape On-state resistance: 5.45mΩ Drain current: 120A Drain-source voltage: 40V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 79nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 600A Application: automotive industry Power dissipation: 190W Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y3R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 172W Polarisation: unipolar Kind of package: reel; tape Gate charge: 59nC Kind of channel: enhanced Pulsed drain current: 600A Drain-source voltage: 40V Drain current: 120A On-state resistance: 6.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| BUK7D36-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Kind of package: reel; tape
On-state resistance: 76mΩ
Drain current: 8.9A
Drain-source voltage: 60V
Case: DFN6; SOT1220
Gate charge: 14nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 56A
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Kind of package: reel; tape
On-state resistance: 76mΩ
Drain current: 8.9A
Drain-source voltage: 60V
Case: DFN6; SOT1220
Gate charge: 14nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 56A
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7E3R5-60E,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Kind of package: tube
On-state resistance: 7.6mΩ
Drain current: 120A
Drain-source voltage: 60V
Case: I2PAK; SOT226
Gate charge: 114nC
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 785A
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Kind of package: tube
On-state resistance: 7.6mΩ
Drain current: 120A
Drain-source voltage: 60V
Case: I2PAK; SOT226
Gate charge: 114nC
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 785A
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7J1R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; Idm: 600A; 500W
Kind of package: reel; tape
On-state resistance: 2.18mΩ
Drain current: 220A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 131nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 600A
Application: automotive industry
Power dissipation: 500W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; Idm: 600A; 500W
Kind of package: reel; tape
On-state resistance: 2.18mΩ
Drain current: 220A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 131nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 600A
Application: automotive industry
Power dissipation: 500W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7J1R4-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Kind of package: reel; tape
On-state resistance: 1.4mΩ
Drain current: 190A
Drain-source voltage: 40V
Case: LFPAK56E; PowerSO8; SOT1023
Gate charge: 103nC
Mounting: SMD
Technology: Trench
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 600A
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Kind of package: reel; tape
On-state resistance: 1.4mΩ
Drain current: 190A
Drain-source voltage: 40V
Case: LFPAK56E; PowerSO8; SOT1023
Gate charge: 103nC
Mounting: SMD
Technology: Trench
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 600A
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K12-60EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 34.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 228A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 20.8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 34.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 228A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 20.8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7K13-60EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 30.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 213A
Drain-source voltage: 60V
Drain current: 38A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 30.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 213A
Drain-source voltage: 60V
Drain current: 38A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K134-100EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Kind of package: reel; tape
On-state resistance: 335mΩ
Drain current: 6.9A
Drain-source voltage: 100V
Case: LFPAK33; SOT1210
Gate charge: 10.5nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Pulsed drain current: 39A
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Kind of package: reel; tape
On-state resistance: 335mΩ
Drain current: 6.9A
Drain-source voltage: 100V
Case: LFPAK33; SOT1210
Gate charge: 10.5nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Pulsed drain current: 39A
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K15-80EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Mounting: SMD
Case: LFPAK56D; SOT1205
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhanced
Pulsed drain current: 92A
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Mounting: SMD
Case: LFPAK56D; SOT1205
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhanced
Pulsed drain current: 92A
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K17-80EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 84A
Drain-source voltage: 80V
Drain current: 15A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 84A
Drain-source voltage: 80V
Drain current: 15A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K18-40EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 127A
Drain-source voltage: 40V
Drain current: 22A
On-state resistance: 37.4mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 38W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 11.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 127A
Drain-source voltage: 40V
Drain current: 22A
On-state resistance: 37.4mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 38W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K23-80EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 53W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 53W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K29-100EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 22A; Idm: 126A; 68W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 38.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Drain-source voltage: 100V
Drain current: 22A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 22A; Idm: 126A; 68W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 38.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Drain-source voltage: 100V
Drain current: 22A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7K32-100EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 116A
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 116A
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K35-60EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 17A; Idm: 95A; 38W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 95A
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 67mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 38W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 17A; Idm: 95A; 38W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 95A
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 67mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 38W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K45-100EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Mounting: SMD
Case: LFPAK56D; SOT1205
Application: automotive industry
Kind of package: reel; tape
Gate charge: 25.9nC
Kind of channel: enhanced
Pulsed drain current: 84A
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET x2
Power dissipation: 53W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Mounting: SMD
Case: LFPAK56D; SOT1205
Application: automotive industry
Kind of package: reel; tape
Gate charge: 25.9nC
Kind of channel: enhanced
Pulsed drain current: 84A
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET x2
Power dissipation: 53W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K52-60EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 71A
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 32W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Mounting: SMD
Case: LFPAK33; SOT1210
Application: automotive industry
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 71A
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 32W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7K5R1-30E,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 340A; 68W
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Drain current: 40A
Drain-source voltage: 30V
Case: LFPAK33; SOT1210
Gate charge: 31.1nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Pulsed drain current: 340A
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 340A; 68W
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Drain current: 40A
Drain-source voltage: 30V
Case: LFPAK33; SOT1210
Gate charge: 31.1nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Pulsed drain current: 340A
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7K5R6-30E,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W
Kind of package: reel; tape
On-state resistance: 10.3mΩ
Drain current: 40A
Drain-source voltage: 30V
Case: LFPAK33; SOT1210
Gate charge: 29.7nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Pulsed drain current: 314A
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 314A; 64W
Kind of package: reel; tape
On-state resistance: 10.3mΩ
Drain current: 40A
Drain-source voltage: 30V
Case: LFPAK33; SOT1210
Gate charge: 29.7nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Pulsed drain current: 314A
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M11-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Kind of package: reel; tape
On-state resistance: 21.3mΩ
Drain current: 34A
Drain-source voltage: 40V
Case: LFPAK33; SOT1210
Gate charge: 16nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 193A
Application: automotive industry
Power dissipation: 50W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Kind of package: reel; tape
On-state resistance: 21.3mΩ
Drain current: 34A
Drain-source voltage: 40V
Case: LFPAK33; SOT1210
Gate charge: 16nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 193A
Application: automotive industry
Power dissipation: 50W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M12-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W
Kind of package: reel; tape
On-state resistance: 23.6mΩ
Drain current: 34A
Drain-source voltage: 40V
Case: LFPAK33; SOT1210
Gate charge: 15.8nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 192A
Application: automotive industry
Power dissipation: 55W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W
Kind of package: reel; tape
On-state resistance: 23.6mΩ
Drain current: 34A
Drain-source voltage: 40V
Case: LFPAK33; SOT1210
Gate charge: 15.8nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 192A
Application: automotive industry
Power dissipation: 55W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M12-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M15-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 29.1mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 29.1mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M19-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 55W
Gate charge: 17.3nC
Kind of channel: enhanced
Pulsed drain current: 143A
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 25.3A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25.3A; Idm: 143A; 55W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 55W
Gate charge: 17.3nC
Kind of channel: enhanced
Pulsed drain current: 143A
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 25.3A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M20-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M21-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M22-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Kind of package: reel; tape
On-state resistance: 55mΩ
Drain current: 26A
Drain-source voltage: 80V
Case: LFPAK33; SOT1210
Gate charge: 23.9nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 147A
Application: automotive industry
Power dissipation: 75W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Kind of package: reel; tape
On-state resistance: 55mΩ
Drain current: 26A
Drain-source voltage: 80V
Case: LFPAK33; SOT1210
Gate charge: 23.9nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 147A
Application: automotive industry
Power dissipation: 75W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M27-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M33-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Kind of package: reel; tape
On-state resistance: 74mΩ
Drain current: 17A
Drain-source voltage: 60V
Case: LFPAK33; SOT1210
Gate charge: 10.9nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 98A
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Kind of package: reel; tape
On-state resistance: 74mΩ
Drain current: 17A
Drain-source voltage: 60V
Case: LFPAK33; SOT1210
Gate charge: 10.9nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 98A
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6644 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 99+ | 0.73 EUR |
| 160+ | 0.45 EUR |
| 169+ | 0.42 EUR |
| 500+ | 0.41 EUR |
| BUK7M42-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M45-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13A
Pulsed drain current: 77A
Power dissipation: 31W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13A
Pulsed drain current: 77A
Power dissipation: 31W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M4R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M5R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M6R3-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Kind of package: reel; tape
On-state resistance: 12.5mΩ
Drain current: 56.4A
Drain-source voltage: 40V
Case: LFPAK33; SOT1210
Gate charge: 28.1nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 319A
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Kind of package: reel; tape
On-state resistance: 12.5mΩ
Drain current: 56.4A
Drain-source voltage: 40V
Case: LFPAK33; SOT1210
Gate charge: 28.1nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 319A
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 82+ | 0.88 EUR |
| 97+ | 0.74 EUR |
| 102+ | 0.7 EUR |
| 200+ | 0.67 EUR |
| BUK7M6R7-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M8R0-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48.8A
Pulsed drain current: 276A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 23.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48.8A
Pulsed drain current: 276A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 23.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M8R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M9R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 18.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 18.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7M9R9-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7S0R7-40HJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 425A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 425A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| BUK7S1R0-40HJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 325A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 325A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| BUK7S1R5-40HJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W
Kind of package: reel; tape
On-state resistance: 3.27mΩ
Drain current: 260A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 93nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 1088A
Application: automotive industry
Power dissipation: 242W
Polarisation: unipolar
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W
Kind of package: reel; tape
On-state resistance: 3.27mΩ
Drain current: 260A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 93nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 1088A
Application: automotive industry
Power dissipation: 242W
Polarisation: unipolar
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| BUK7V4R2-40HX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 85W
Application: automotive industry
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 37nC
Gate-source voltage: ±20V
Pulsed drain current: 393A
Kind of channel: enhanced
Drain-source voltage: 40V
Drain current: 69.5A
Anzahl je Verpackung: 1500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 85W
Application: automotive industry
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 37nC
Gate-source voltage: ±20V
Pulsed drain current: 393A
Kind of channel: enhanced
Drain-source voltage: 40V
Drain current: 69.5A
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7Y08-40B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58.85A
Pulsed drain current: 332A
Power dissipation: 105W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 36.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58.85A
Pulsed drain current: 332A
Power dissipation: 105W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 36.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y102-100B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 60W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.6A
Pulsed drain current: 60A
Power dissipation: 60W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y113-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Kind of package: reel; tape
On-state resistance: 313mΩ
Drain current: 8.5A
Drain-source voltage: 100V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 10.4nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 48A
Application: automotive industry
Power dissipation: 45W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Kind of package: reel; tape
On-state resistance: 313mΩ
Drain current: 8.5A
Drain-source voltage: 100V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 10.4nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 48A
Application: automotive industry
Power dissipation: 45W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y12-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 210A; 65W
Kind of package: reel; tape
On-state resistance: 23.6mΩ
Drain current: 37A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 15nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 210A
Application: automotive industry
Power dissipation: 65W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 210A; 65W
Kind of package: reel; tape
On-state resistance: 23.6mΩ
Drain current: 37A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 15nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 210A
Application: automotive industry
Power dissipation: 65W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y14-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Kind of package: reel; tape
On-state resistance: 35.1mΩ
Drain current: 46A
Drain-source voltage: 80V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 44.8nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 259A
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Kind of package: reel; tape
On-state resistance: 35.1mΩ
Drain current: 46A
Drain-source voltage: 80V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 44.8nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 259A
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1437 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.33 EUR |
| 68+ | 1.06 EUR |
| 85+ | 0.85 EUR |
| 89+ | 0.81 EUR |
| 500+ | 0.78 EUR |
| BUK7Y15-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 41.5mΩ
Mounting: SMD
Gate charge: 54.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 41.5mΩ
Mounting: SMD
Gate charge: 54.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y153-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.7A
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 424mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.7A
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 424mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y19-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Power dissipation: 169W
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 225A
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.6mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 225A; 169W
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Power dissipation: 169W
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 225A
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y1R4-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7Y1R7-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.7mΩ
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 294W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.7mΩ
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7Y21-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y22-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W
Kind of package: reel; tape
On-state resistance: 61mΩ
Drain current: 35A
Drain-source voltage: 100V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 47nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 196A
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W
Kind of package: reel; tape
On-state resistance: 61mΩ
Drain current: 35A
Drain-source voltage: 100V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 47nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 196A
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y25-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 64W
Kind of package: reel; tape
On-state resistance: 56mΩ
Drain current: 24A
Drain-source voltage: 60V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 16.1nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 136A
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 64W
Kind of package: reel; tape
On-state resistance: 56mΩ
Drain current: 24A
Drain-source voltage: 60V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 16.1nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 136A
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y25-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 62.75mΩ
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 62.75mΩ
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y28-75B,115 |
|
Hersteller: NEXPERIA
BUK7Y28-75B.115 SMD N channel transistors
BUK7Y28-75B.115 SMD N channel transistors
Produkt ist nicht verfügbar
| BUK7Y29-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 102A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 57.1mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 102A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 57.1mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK7Y2R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W
Kind of package: reel; tape
On-state resistance: 5.45mΩ
Drain current: 120A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 79nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 600A
Application: automotive industry
Power dissipation: 190W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 190W
Kind of package: reel; tape
On-state resistance: 5.45mΩ
Drain current: 120A
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 79nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 600A
Application: automotive industry
Power dissipation: 190W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK7Y3R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 172W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 59nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 6.5mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 172W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 59nC
Kind of channel: enhanced
Pulsed drain current: 600A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 6.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar