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LM2575TV-15G LM2575TV-15G onsemi lm2575-d.pdf Description: IC REG BUCK 15V 1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
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MC100E336FN MC100E336FN onsemi ONSMS12216-1.pdf?t.download=true&u=5oefqw Description: REGISTERED BUS TRANSCEIVER
Packaging: Bulk
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HCPL2630SDVM HCPL2630SDVM onsemi hcpl2631m-d.pdf Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
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HCPL2630SDVM HCPL2630SDVM onsemi hcpl2631m-d.pdf Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
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MC10H115MR1 MC10H115MR1 onsemi ONSMS10583-1.pdf?t.download=true&u=5oefqw Description: IC LINE RECEIVER
Packaging: Bulk
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MMSZ5244BT1H MMSZ5244BT1H onsemi Description: DIODE ZENER 14V 0.5W SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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MMSZ5244BT1 MMSZ5244BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 14V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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MMSZ5244B MMSZ5244B onsemi MMSZ5227B.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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MMSZ5244B MMSZ5244B onsemi MMSZ5227B.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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MMSZ5244B MMSZ5244B onsemi MMSZ5227B.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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ADD5045-915-1-GEVK ADD5045-915-1-GEVK onsemi Description: AX5045 915MHZ DVK-2 ADD-ON BOARD
Packaging: Box
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: AX5045
Platform: DVK-2
Produkt ist nicht verfügbar
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FDMC8884 FDMC8884 onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
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FDMC8884 FDMC8884 onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
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NSR02301MX4T5G NSR02301MX4T5G onsemi nsr02301-d.pdf Description: DIODE SCHOTTKY 30V 200MA 2X4DFN
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 11 ns
Technology: Schottky
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X4DFN (0.45x0.24)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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BC847AMTF BC847AMTF onsemi ONSM-S-A0004900064-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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BC847ALT1 BC847ALT1 onsemi BC846ALT1_Rev6.pdf Description: TRANS NPN 45V 100MA SOT23
Packaging: Bulk
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P6KE39ARL P6KE39ARL onsemi P6KE6.8A_Series.pdf Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5KE12ARL4 1.5KE12ARL4 onsemi 1N6267A_Series.pdf Description: TVS DIODE 10.2VWM 16.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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CAT3644HV3 onsemi ONSMS38987-1.pdf?t.download=true&u=5oefqw Description: IC LED DRVR RGLTR SGL WR 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 800kHz ~ 1.6MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 25mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
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CAT3604HS4-TE13 onsemi CATSS00900-1.pdf?t.download=true&u=5oefqw Description: IC LED DRV RGLTR PWM 30MA 16TQFN
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Dimming: PWM
Supplier Device Package: 16-TQFN (4x4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight, Camera Flash
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 16-WQFN Exposed Pad
Packaging: Bulk
Topology: Switched Capacitor (Charge Pump)
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BD435G BD435G onsemi bd437-d.pdf Description: TRANS NPN 32V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
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FAD8253MX-1 FAD8253MX-1 onsemi FAD8253-D.PDF Description: 1200V 2.5A HALF-BRIDGE GATE DRIV
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 18V
Applications: General Purpose
Current - Output / Channel: 2.5A, 3.4A
Current - Peak Output: 2.5A, 3.4A
Technology: IGBT
Voltage - Load: 10.6V ~ 22V
Supplier Device Package: 14-SOIC
Fault Protection: Current Limiting, Shoot Through, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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MPSA05 MPSA05 onsemi MPSA05%2CMMBTA05.pdf Description: TRANS NPN GP BIPO LP 60V TO-92
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT54CLT1 BAT54CLT1 onsemi BAT54CLT1-D.PDF Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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NCP1240AD065R2G NCP1240AD065R2G onsemi ncp1240-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
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NCP1240GD065R2G NCP1240GD065R2G onsemi ncp1240g-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
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NCP1240FD065R2G NCP1240FD065R2G onsemi ncp1240-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
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MT9M114EBLSTCZ-CR MT9M114EBLSTCZ-CR onsemi mt9m114-d.pdf Description: IMAGE SENSOR CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
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FFSB3065B-F085 FFSB3065B-F085 onsemi ffsb3065b-f085-d.pdf Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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FFSB3065B-F085 FFSB3065B-F085 onsemi ffsb3065b-f085-d.pdf Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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AR0144CSSM00SUKA0-CPBR AR0144CSSM00SUKA0-CPBR onsemi AR0144-D.PDF Description: IMAGE SENSOR CMOS ODCSP-69
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
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AP1302CSSL00SMGA0-DR AP1302CSSL00SMGA0-DR onsemi AP1302-D.PDF Description: IMAGE SIGNAL PROCESSOR
Packaging: Tray
Package / Case: 120-WFBGA
Mounting Type: Surface Mount
Function: Processor
Supplier Device Package: 120-VFBGA (6.5x6.5)
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ASX340AT3C00XPED0-DPBR ASX340AT3C00XPED0-DPBR onsemi asx340at-d.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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ASX340AT2C00XPED0-DRBR ASX340AT2C00XPED0-DRBR onsemi asx340at-d.pdf Description: SENSOR IMAGE COLOR CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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NDSH25170A NDSH25170A onsemi ndsh25170a-d.pdf Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2025pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
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NTBG015N065SC1 NTBG015N065SC1 onsemi ntbg015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
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NTBG015N065SC1 NTBG015N065SC1 onsemi ntbg015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
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FFSH50120A FFSH50120A onsemi ffsh50120a-d.pdf Description: DIODE SIL CARB 1200V 77A TO2472
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 77A
Capacitance @ Vr, F: 2560pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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AR0521SR2M09SURA0-DP AR0521SR2M09SURA0-DP onsemi AR0521-D.PDF Description: 5MP 1/2 CIS SO
Frames per Second: 60.0
Supplier Device Package: 52-PLCC (12x12)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Type: CMOS
Package / Case: 52-LCC
Packaging: Tray
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AR0130CSSM00SPCA0-DRBR AR0130CSSM00SPCA0-DRBR onsemi AR0130CS.pdf Description: IMAGE SENSOR
Frames per Second: 45.0
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
auf Bestellung 3459 Stücke:
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AR1335CSSC11SMKA0-CP AR1335CSSC11SMKA0-CP onsemi AR1335-D.PDF Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
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AR0134CSSC00SPCA0-DPBR AR0134CSSC00SPCA0-DPBR onsemi ar0134cs-d.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
auf Bestellung 982 Stücke:
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AR0521SR2C09SURA0-DR AR0521SR2C09SURA0-DR onsemi AR0521-D.PDF Description: IMAGE SENSOR 5MP 1/2 CIS SO
Frames per Second: 60.0
Supplier Device Package: 52-PLCC (12x12)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Type: CMOS
Package / Case: 52-LCC
Packaging: Tray
auf Bestellung 1012 Stücke:
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AR0521SR2C09SURA0-DP AR0521SR2C09SURA0-DP onsemi AR0521-D.PDF Description: 5MP 1/2 CIS SO
Frames per Second: 60.0
Supplier Device Package: 52-PLCC (12x12)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Type: CMOS
Package / Case: 52-LCC
Packaging: Tray
auf Bestellung 1610 Stücke:
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AR0135CS2M00SUEA0-DPBR AR0135CS2M00SUEA0-DPBR onsemi ar0135cs?pdf=Y Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
auf Bestellung 1901 Stücke:
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AR0522SRSM09SURA0-DP AR0522SRSM09SURA0-DP onsemi AR0522-D.PDF Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 2121 Stücke:
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5+51.16 EUR
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AR0234CSSC28SUKA0-CP AR0234CSSC28SUKA0-CP onsemi AR0234CS-D.PDF Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 2603 Stücke:
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AR0234CSSC00SUKA0-CP AR0234CSSC00SUKA0-CP onsemi AR0234CS-D.PDF Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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NXH040F120MNF1PTG NXH040F120MNF1PTG onsemi nxh040f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
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NXH040F120MNF1PG NXH040F120MNF1PG onsemi nxh040f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
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NXH020F120MNF1PG NXH020F120MNF1PG onsemi nxh020f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
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NXH020F120MNF1PTG NXH020F120MNF1PTG onsemi nxh020f120mnf1-d.pdf Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
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1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
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1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
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NTHL040N120M3S NTHL040N120M3S onsemi nthl040n120m3s-d.pdf Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
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NTH4L040N120SC1 NTH4L040N120SC1 onsemi nth4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
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NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
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800+30.9 EUR
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NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
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NVH4L040N120M3S NVH4L040N120M3S onsemi nvh4l040n120m3s-d.pdf Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
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NVHL040N120SC1 NVHL040N120SC1 onsemi nvhl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
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LM2575TV-15G lm2575-d.pdf
LM2575TV-15G
Hersteller: onsemi
Description: IC REG BUCK 15V 1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 15V
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MC100E336FN ONSMS12216-1.pdf?t.download=true&u=5oefqw
MC100E336FN
Hersteller: onsemi
Description: REGISTERED BUS TRANSCEIVER
Packaging: Bulk
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HCPL2630SDVM hcpl2631m-d.pdf
HCPL2630SDVM
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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HCPL2630SDVM hcpl2631m-d.pdf
HCPL2630SDVM
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
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5+4.74 EUR
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MC10H115MR1 ONSMS10583-1.pdf?t.download=true&u=5oefqw
MC10H115MR1
Hersteller: onsemi
Description: IC LINE RECEIVER
Packaging: Bulk
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MMSZ5244BT1H
MMSZ5244BT1H
Hersteller: onsemi
Description: DIODE ZENER 14V 0.5W SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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MMSZ5244BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5244BT1
Hersteller: onsemi
Description: DIODE ZENER 14V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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MMSZ5244B MMSZ5227B.pdf
MMSZ5244B
Hersteller: onsemi
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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MMSZ5244B MMSZ5227B.pdf
MMSZ5244B
Hersteller: onsemi
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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MMSZ5244B MMSZ5227B.pdf
MMSZ5244B
Hersteller: onsemi
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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11539+0.057 EUR
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ADD5045-915-1-GEVK
ADD5045-915-1-GEVK
Hersteller: onsemi
Description: AX5045 915MHZ DVK-2 ADD-ON BOARD
Packaging: Box
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: AX5045
Platform: DVK-2
Produkt ist nicht verfügbar
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FDMC8884 FDMC8884_RevE4_Jun2014.pdf
FDMC8884
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Produkt ist nicht verfügbar
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FDMC8884 FDMC8884_RevE4_Jun2014.pdf
FDMC8884
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
auf Bestellung 22691 Stücke:
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AnzahlPrivatkunde
626+0.87 EUR
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NSR02301MX4T5G nsr02301-d.pdf
NSR02301MX4T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2X4DFN
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 11 ns
Technology: Schottky
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X4DFN (0.45x0.24)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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10000+0.13 EUR
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BC847AMTF ONSM-S-A0004900064-1.pdf?t.download=true&u=5oefqw
BC847AMTF
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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7407+0.074 EUR
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BC847ALT1 BC846ALT1_Rev6.pdf
BC847ALT1
Hersteller: onsemi
Description: TRANS NPN 45V 100MA SOT23
Packaging: Bulk
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4537+0.13 EUR
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P6KE39ARL P6KE6.8A_Series.pdf
P6KE39ARL
Hersteller: onsemi
Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5KE12ARL4 1N6267A_Series.pdf
1.5KE12ARL4
Hersteller: onsemi
Description: TVS DIODE 10.2VWM 16.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1069+0.5 EUR
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CAT3644HV3 ONSMS38987-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC LED DRVR RGLTR SGL WR 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 800kHz ~ 1.6MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 25mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
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699+0.76 EUR
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CAT3604HS4-TE13 CATSS00900-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 30MA 16TQFN
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Dimming: PWM
Supplier Device Package: 16-TQFN (4x4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight, Camera Flash
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 16-WQFN Exposed Pad
Packaging: Bulk
Topology: Switched Capacitor (Charge Pump)
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807+0.71 EUR
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BD435G bd437-d.pdf
BD435G
Hersteller: onsemi
Description: TRANS NPN 32V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
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704+0.8 EUR
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FAD8253MX-1 FAD8253-D.PDF
FAD8253MX-1
Hersteller: onsemi
Description: 1200V 2.5A HALF-BRIDGE GATE DRIV
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 18V
Applications: General Purpose
Current - Output / Channel: 2.5A, 3.4A
Current - Peak Output: 2.5A, 3.4A
Technology: IGBT
Voltage - Load: 10.6V ~ 22V
Supplier Device Package: 14-SOIC
Fault Protection: Current Limiting, Shoot Through, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2148 Stücke:
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5+4.9 EUR
10+3.65 EUR
25+3.34 EUR
100+3 EUR
250+2.83 EUR
500+2.77 EUR
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MPSA05 MPSA05%2CMMBTA05.pdf
MPSA05
Hersteller: onsemi
Description: TRANS NPN GP BIPO LP 60V TO-92
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT54CLT1 BAT54CLT1-D.PDF
BAT54CLT1
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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3030+0.18 EUR
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NCP1240AD065R2G ncp1240-d.pdf
NCP1240AD065R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
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AnzahlPrivatkunde
437+1.27 EUR
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NCP1240GD065R2G ncp1240g-d.pdf
NCP1240GD065R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
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AnzahlPrivatkunde
363+1.5 EUR
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NCP1240FD065R2G ncp1240-d.pdf
NCP1240FD065R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 4688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
437+1.27 EUR
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MT9M114EBLSTCZ-CR mt9m114-d.pdf
MT9M114EBLSTCZ-CR
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.54 EUR
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FFSB3065B-F085 ffsb3065b-f085-d.pdf
FFSB3065B-F085
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
800+6.83 EUR
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FFSB3065B-F085 ffsb3065b-f085-d.pdf
FFSB3065B-F085
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.71 EUR
10+11.4 EUR
100+8.39 EUR
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AR0144CSSM00SUKA0-CPBR AR0144-D.PDF
AR0144CSSM00SUKA0-CPBR
Hersteller: onsemi
Description: IMAGE SENSOR CMOS ODCSP-69
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
auf Bestellung 2259 Stücke:
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AnzahlPrivatkunde
1+20.94 EUR
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AP1302CSSL00SMGA0-DR AP1302-D.PDF
AP1302CSSL00SMGA0-DR
Hersteller: onsemi
Description: IMAGE SIGNAL PROCESSOR
Packaging: Tray
Package / Case: 120-WFBGA
Mounting Type: Surface Mount
Function: Processor
Supplier Device Package: 120-VFBGA (6.5x6.5)
auf Bestellung 3689 Stücke:
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2+20.09 EUR
5+18.2 EUR
10+17.49 EUR
25+16.65 EUR
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100+15.54 EUR
500+14.48 EUR
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ASX340AT3C00XPED0-DPBR asx340at-d.pdf
ASX340AT3C00XPED0-DPBR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 507 Stücke:
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AnzahlPrivatkunde
1+25.19 EUR
5+22.32 EUR
10+21.3 EUR
25+20.1 EUR
40+19.55 EUR
80+18.81 EUR
440+17.3 EUR
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ASX340AT2C00XPED0-DRBR asx340at-d.pdf
ASX340AT2C00XPED0-DRBR
Hersteller: onsemi
Description: SENSOR IMAGE COLOR CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.44 EUR
5+22.53 EUR
10+21.49 EUR
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80+18.99 EUR
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NDSH25170A ndsh25170a-d.pdf
NDSH25170A
Hersteller: onsemi
Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2025pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
auf Bestellung 1092 Stücke:
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1+31.17 EUR
30+19.35 EUR
120+16.96 EUR
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NTBG015N065SC1 ntbg015n065sc1-d.pdf
NTBG015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+32.01 EUR
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NTBG015N065SC1 ntbg015n065sc1-d.pdf
NTBG015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 8197 Stücke:
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1+55.29 EUR
10+40.41 EUR
100+39.19 EUR
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FFSH50120A ffsh50120a-d.pdf
FFSH50120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 77A TO2472
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 77A
Capacitance @ Vr, F: 2560pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+42.11 EUR
30+25.87 EUR
120+24.88 EUR
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AR0521SR2M09SURA0-DP AR0521-D.PDF
AR0521SR2M09SURA0-DP
Hersteller: onsemi
Description: 5MP 1/2 CIS SO
Frames per Second: 60.0
Supplier Device Package: 52-PLCC (12x12)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Type: CMOS
Package / Case: 52-LCC
Packaging: Tray
auf Bestellung 358 Stücke:
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AnzahlPrivatkunde
1+35.41 EUR
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AR0130CSSM00SPCA0-DRBR AR0130CS.pdf
AR0130CSSM00SPCA0-DRBR
Hersteller: onsemi
Description: IMAGE SENSOR
Frames per Second: 45.0
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
auf Bestellung 3459 Stücke:
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AnzahlPrivatkunde
1+31.12 EUR
5+28.35 EUR
10+27.31 EUR
25+26.07 EUR
50+25.24 EUR
100+24.47 EUR
500+22.9 EUR
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AR1335CSSC11SMKA0-CP AR1335-D.PDF
AR1335CSSC11SMKA0-CP
Hersteller: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
auf Bestellung 5147 Stücke:
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1+37.64 EUR
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10+33.11 EUR
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500+27.86 EUR
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AR0134CSSC00SPCA0-DPBR ar0134cs-d.pdf
AR0134CSSC00SPCA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
auf Bestellung 982 Stücke:
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AnzahlPrivatkunde
1+46.62 EUR
5+42.69 EUR
10+41.21 EUR
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500+34.94 EUR
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AR0521SR2C09SURA0-DR AR0521-D.PDF
AR0521SR2C09SURA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR 5MP 1/2 CIS SO
Frames per Second: 60.0
Supplier Device Package: 52-PLCC (12x12)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Type: CMOS
Package / Case: 52-LCC
Packaging: Tray
auf Bestellung 1012 Stücke:
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AnzahlPrivatkunde
1+49.58 EUR
5+45.39 EUR
10+43.83 EUR
25+41.96 EUR
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AR0521SR2C09SURA0-DP AR0521-D.PDF
AR0521SR2C09SURA0-DP
Hersteller: onsemi
Description: 5MP 1/2 CIS SO
Frames per Second: 60.0
Supplier Device Package: 52-PLCC (12x12)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Type: CMOS
Package / Case: 52-LCC
Packaging: Tray
auf Bestellung 1610 Stücke:
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AnzahlPrivatkunde
1+50.49 EUR
5+46.23 EUR
10+44.65 EUR
25+42.74 EUR
50+41.45 EUR
100+40.26 EUR
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AR0135CS2M00SUEA0-DPBR ar0135cs?pdf=Y
AR0135CS2M00SUEA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
auf Bestellung 1901 Stücke:
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AnzahlPrivatkunde
1+49.05 EUR
5+44.91 EUR
10+43.38 EUR
25+41.54 EUR
50+40.29 EUR
100+39.14 EUR
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AR0522SRSM09SURA0-DP AR0522-D.PDF
AR0522SRSM09SURA0-DP
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 2121 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+55.81 EUR
5+51.16 EUR
10+49.42 EUR
25+47.35 EUR
50+45.93 EUR
100+44.62 EUR
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AR0234CSSC28SUKA0-CP AR0234CS-D.PDF
AR0234CSSC28SUKA0-CP
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 2603 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+67.07 EUR
5+61.58 EUR
10+59.55 EUR
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100+53.92 EUR
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AR0234CSSC00SUKA0-CP AR0234CS-D.PDF
AR0234CSSC00SUKA0-CP
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+67.07 EUR
5+61.58 EUR
10+59.55 EUR
25+57.11 EUR
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100+53.92 EUR
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NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
NXH040F120MNF1PTG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 53 Stücke:
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1+166.72 EUR
28+135.71 EUR
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NXH040F120MNF1PG nxh040f120mnf1-d.pdf
NXH040F120MNF1PG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 54 Stücke:
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1+164.18 EUR
28+133.23 EUR
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NXH020F120MNF1PG nxh020f120mnf1-d.pdf
NXH020F120MNF1PG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+250.39 EUR
28+207.14 EUR
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NXH020F120MNF1PTG nxh020f120mnf1-d.pdf
NXH020F120MNF1PTG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 2660 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+301.46 EUR
28+257.86 EUR
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1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.039 EUR
Mindestbestellmenge: 10000 Stücke
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1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
105+0.2 EUR
214+0.099 EUR
500+0.082 EUR
1000+0.057 EUR
2000+0.049 EUR
5000+0.045 EUR
Mindestbestellmenge: 72 Stücke
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NTHL040N120M3S nthl040n120m3s-d.pdf
NTHL040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 23715 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.6 EUR
30+12.88 EUR
120+10.96 EUR
510+9.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L040N120SC1 nth4l040n120sc1-d.pdf
NTH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 6614 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+43.4 EUR
30+27.51 EUR
120+24.04 EUR
510+23.56 EUR
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+30.9 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1843 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+53.74 EUR
10+39.21 EUR
100+37.83 EUR
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NVH4L040N120M3S nvh4l040n120m3s-d.pdf
NVH4L040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+39.48 EUR
30+24.82 EUR
120+21.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVHL040N120SC1 nvhl040n120sc1-d.pdf
NVHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 2694 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+50.46 EUR
30+32.42 EUR
120+28.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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