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FOD8802D FOD8802D onsemi fod8802-d.pdf Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 6µs, 7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
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FFSP0665A FFSP0665A onsemi ffsp0665a-d.pdf Description: DIODE SIL CARB 650V 8.8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 8.8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSB0665A FFSB0665A onsemi ffsb0665a-d.pdf Description: DIODE SIL CARBIDE 650V 9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSB0665A FFSB0665A onsemi ffsb0665a-d.pdf Description: DIODE SIL CARBIDE 650V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSP0865A FFSP0865A onsemi ffsp0865a-d.pdf Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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MM3Z10VT1 MM3Z10VT1 onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 10V 200MW SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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NVMFS4C308NWFT1G NVMFS4C308NWFT1G onsemi nvmfs4c308n-d.pdf Description: TRENCH 30V NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G NVMFS6H858NWFT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G NVMFS6H858NWFT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H801NLWFT1G NVMFS6H801NLWFT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS5C646NLWFAFT1G NVMFS5C646NLWFAFT1G onsemi nvmfs5c646nl-d.pdf Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C646NLWFAFT1G NVMFS5C646NLWFAFT1G onsemi nvmfs5c646nl-d.pdf Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NWFT1G NVMFS6H801NWFT1G onsemi nvmfs6h801n-d.pdf Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H801NWFT1G NVMFS6H801NWFT1G onsemi nvmfs6h801n-d.pdf Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
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NC7SZ32M5X-L22090 NC7SZ32M5X-L22090 onsemi nc7sz32-d.pdf Description: IC GATE OR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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NC7S04M5X-L22090 NC7S04M5X-L22090 onsemi nc7s04-d.pdf Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NC7S86M5X-L22090 NC7S86M5X-L22090 onsemi nc7s86-d.pdf Description: IC GATE XOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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MOC3021SM MOC3021SM onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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500+0.61 EUR
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LM2902MX LM2902MX onsemi LM324%28A%29%2CLM2902%28A%29.pdf Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM2902MX LM2902MX onsemi LM324%28A%29%2CLM2902%28A%29.pdf Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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LM2902M LM2902M onsemi lm2902a-d.pdf Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LB1962MC-AH LB1962MC-AH onsemi Description: IC MOTOR DRVR 3.8V-16.8V 10SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LB1940T-MPB-H onsemi ONSMS37645-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
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LB1940T-MPB-H onsemi ONSMS37645-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
Produkt ist nicht verfügbar
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AR0821CSSC18SMEA1-DPBR AR0821CSSC18SMEA1-DPBR onsemi AR0821CS.pdf Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
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74F109PC 74F109PC onsemi DS_261_74F109.pdf Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
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74F109SJX 74F109SJX onsemi DS_261_74F109.pdf Description: IC FF JK TYPE DUAL 1BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
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74F109SCX 74F109SCX onsemi DS_261_74F109.pdf Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
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NTLUS4195PZTAG NTLUS4195PZTAG onsemi ntlus4195pz-d.pdf Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
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NTLJD3181PZTAG NTLJD3181PZTAG onsemi ntljd3181pz-d.pdf Description: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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NTLUS3A39PZTAG NTLUS3A39PZTAG onsemi ntlus3a39pz-d.pdf Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
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NTLUD3A260PZTAG NTLUD3A260PZTAG onsemi ntlud3a260pz-d.pdf Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
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NCP81278DMNTXG NCP81278DMNTXG onsemi NCP81278D_NCP81278T_Rev1_Apr2018.pdf Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
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NCP81278DMNTXG NCP81278DMNTXG onsemi NCP81278D_NCP81278T_Rev1_Apr2018.pdf Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
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2SD1801T-E 2SD1801T-E onsemi Description: TRANS NPN 50V 2A TP-FA
Packaging: Bag
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2SC6043 2SC6043 onsemi 2SC6043.pdf Description: TRANS NPN 50V 2A 3-MP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-MP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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LC898150XH-MH onsemi Description: IC MOTOR DVR OIS AF 21WLCSP
Package / Case: 21-XFBGA, WLCSP
Packaging: Bulk
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 21-WLCSP (1.17x2.77)
Voltage - Load: 1.7V ~ 3.3V
Applications: General Purpose
Voltage - Supply: 2.6V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Interface: PWM, SPI
Current - Output: 130mA
Function: Driver
Mounting Type: Surface Mount
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FFSH2065BDN-F085 FFSH2065BDN-F085 onsemi ffsh2065bdn-f085-d.pdf Description: DIODE ARRAY SIC 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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FFSH2065B-F085 FFSH2065B-F085 onsemi ffsh2065b-f085-d.pdf Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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NRVBSS25FA NRVBSS25FA onsemi ss29fa-d.pdf Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Qualification: AEC-Q101
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MC14043BCPG MC14043BCPG onsemi MC14043B-D.pdf Description: IC LATCH R-S QUAD NOR 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-PDIP
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MC14043BFELG MC14043BFELG onsemi MC14043B%2C%20MC14044B_Rev2014.pdf Description: IC S-R 1:1 16-SOEIAJ
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOEIAJ
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NTMS4N01R2G NTMS4N01R2G onsemi ntms4n01r2-d.pdf Description: MOSFET N-CH 20V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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NTMFS5C612NT1G NTMFS5C612NT1G onsemi ntmfs5c612n-d.pdf Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
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NTMFS5C612NT1G NTMFS5C612NT1G onsemi ntmfs5c612n-d.pdf Description: NFET SO8FL 60V 235A 1.5MO
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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NVMFS5C612NT1G NVMFS5C612NT1G onsemi nvmfs5c612n-d.pdf Description: NFET SO8FL 60V 235A 1.5MO
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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NVMFS5C612NT1G NVMFS5C612NT1G onsemi nvmfs5c612n-d.pdf Description: NFET SO8FL 60V 235A 1.5MO
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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TND314S-TL-E onsemi ENA0420-D.pdf?t.download=true&u=5oefqw Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
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TND314S-TL-E onsemi ENA0420-D.pdf?t.download=true&u=5oefqw Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
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SN74LS90D SN74LS90D onsemi sn74ls90 Description: IC DECADE COUNTER 4-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
Count Rate: 42 MHz
Number of Bits per Element: 4
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NLVVHC1G86DFT2G NLVVHC1G86DFT2G onsemi Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NLVVHC1G86DFT1G NLVVHC1G86DFT1G onsemi Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLVVHC1G86DFT1G NLVVHC1G86DFT1G onsemi Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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MOC3011VM MOC3011VM onsemi MOC3010-12M,MOC3020-23M.pdf Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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LA6502-TLM-E LA6502-TLM-E onsemi Description: IC MOTOR DRIVER 48HSSOP
Packaging: Bulk
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
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LA6502-MPB-E LA6502-MPB-E onsemi Description: IC MOTOR DRIVER 48HSSOP
Packaging: Tube
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
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FDFMA2P853 FDFMA2P853 onsemi FDFMA2P853-D.pdf Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
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MC74HC4852AN MC74HC4852AN onsemi Description: IC SWITCH SP4T X 2 400OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2V ~ 6V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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MC74HC4852ANG MC74HC4852ANG onsemi Description: IC SWITCH SP4T X 2 400OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2V ~ 6V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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NCP1852AFCCT1G NCP1852AFCCT1G onsemi NCP1852%2CA.pdf Description: IC BAT CHG LI-ION 1CL 25FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, FCBGA
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 25-FlipChip (2.55x2.2)
Charge Current - Max: 1.8A
Fault Protection: Over Voltage
Voltage - Supply (Max): 7.3V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
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FOD8802D fod8802-d.pdf
FOD8802D
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 6µs, 7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
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FFSP0665A ffsp0665a-d.pdf
FFSP0665A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8.8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 8.8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSB0665A ffsb0665a-d.pdf
FFSB0665A
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSB0665A ffsb0665a-d.pdf
FFSB0665A
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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FFSP0865A ffsp0865a-d.pdf
FFSP0865A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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MM3Z10VT1 MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
MM3Z10VT1
Hersteller: onsemi
Description: DIODE ZENER 10V 200MW SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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NVMFS4C308NWFT1G nvmfs4c308n-d.pdf
NVMFS4C308NWFT1G
Hersteller: onsemi
Description: TRENCH 30V NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G nvmfs6h858n-d.pdf
NVMFS6H858NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G nvmfs6h858n-d.pdf
NVMFS6H858NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H801NLWFT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS5C646NLWFAFT1G nvmfs5c646nl-d.pdf
NVMFS5C646NLWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C646NLWFAFT1G nvmfs5c646nl-d.pdf
NVMFS5C646NLWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NWFT1G nvmfs6h801n-d.pdf
NVMFS6H801NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H801NWFT1G nvmfs6h801n-d.pdf
NVMFS6H801NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
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NC7SZ32M5X-L22090 nc7sz32-d.pdf
NC7SZ32M5X-L22090
Hersteller: onsemi
Description: IC GATE OR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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NC7S04M5X-L22090 nc7s04-d.pdf
NC7S04M5X-L22090
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NC7S86M5X-L22090 nc7s86-d.pdf
NC7S86M5X-L22090
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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MOC3021SM moc3023m-d.pdf
MOC3021SM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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15+1.43 EUR
50+0.8 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.57 EUR
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LM2902MX LM324%28A%29%2CLM2902%28A%29.pdf
LM2902MX
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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LM2902MX LM324%28A%29%2CLM2902%28A%29.pdf
LM2902MX
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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LM2902M lm2902a-d.pdf
LM2902M
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LB1962MC-AH
LB1962MC-AH
Hersteller: onsemi
Description: IC MOTOR DRVR 3.8V-16.8V 10SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LB1940T-MPB-H ONSMS37645-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
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LB1940T-MPB-H ONSMS37645-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
Produkt ist nicht verfügbar
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AR0821CSSC18SMEA1-DPBR AR0821CS.pdf
AR0821CSSC18SMEA1-DPBR
Hersteller: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
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2700+62.56 EUR
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74F109PC DS_261_74F109.pdf
74F109PC
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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74F109SJX DS_261_74F109.pdf
74F109SJX
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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74F109SCX DS_261_74F109.pdf
74F109SCX
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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NTLUS4195PZTAG ntlus4195pz-d.pdf
NTLUS4195PZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Produkt ist nicht verfügbar
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NTLJD3181PZTAG ntljd3181pz-d.pdf
NTLJD3181PZTAG
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Produkt ist nicht verfügbar
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NTLUS3A39PZTAG ntlus3a39pz-d.pdf
NTLUS3A39PZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
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NTLUD3A260PZTAG ntlud3a260pz-d.pdf
NTLUD3A260PZTAG
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
auf Bestellung 594 Stücke:
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20+1.05 EUR
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NCP81278DMNTXG NCP81278D_NCP81278T_Rev1_Apr2018.pdf
NCP81278DMNTXG
Hersteller: onsemi
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
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4000+0.95 EUR
8000+0.9 EUR
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NCP81278DMNTXG NCP81278D_NCP81278T_Rev1_Apr2018.pdf
NCP81278DMNTXG
Hersteller: onsemi
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
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6+3.52 EUR
10+2.18 EUR
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250+1.29 EUR
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2SD1801T-E
2SD1801T-E
Hersteller: onsemi
Description: TRANS NPN 50V 2A TP-FA
Packaging: Bag
Produkt ist nicht verfügbar
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2SC6043 2SC6043.pdf
2SC6043
Hersteller: onsemi
Description: TRANS NPN 50V 2A 3-MP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-MP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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1010+0.55 EUR
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LC898150XH-MH
Hersteller: onsemi
Description: IC MOTOR DVR OIS AF 21WLCSP
Package / Case: 21-XFBGA, WLCSP
Packaging: Bulk
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 21-WLCSP (1.17x2.77)
Voltage - Load: 1.7V ~ 3.3V
Applications: General Purpose
Voltage - Supply: 2.6V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Interface: PWM, SPI
Current - Output: 130mA
Function: Driver
Mounting Type: Surface Mount
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FFSH2065BDN-F085 ffsh2065bdn-f085-d.pdf
FFSH2065BDN-F085
Hersteller: onsemi
Description: DIODE ARRAY SIC 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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2+18.2 EUR
30+10.72 EUR
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FFSH2065B-F085 ffsh2065b-f085-d.pdf
FFSH2065B-F085
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
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2+18.55 EUR
30+10.96 EUR
120+9.28 EUR
510+8.06 EUR
1020+7.83 EUR
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NRVBSS25FA ss29fa-d.pdf
NRVBSS25FA
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Qualification: AEC-Q101
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18+1.21 EUR
28+0.75 EUR
100+0.48 EUR
500+0.36 EUR
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MC14043BCPG MC14043B-D.pdf
MC14043BCPG
Hersteller: onsemi
Description: IC LATCH R-S QUAD NOR 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar
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MC14043BFELG MC14043B%2C%20MC14044B_Rev2014.pdf
MC14043BFELG
Hersteller: onsemi
Description: IC S-R 1:1 16-SOEIAJ
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOEIAJ
Produkt ist nicht verfügbar
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NTMS4N01R2G ntms4n01r2-d.pdf
NTMS4N01R2G
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Produkt ist nicht verfügbar
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NTMFS5C612NT1G ntmfs5c612n-d.pdf
NTMFS5C612NT1G
Hersteller: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Produkt ist nicht verfügbar
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NTMFS5C612NT1G ntmfs5c612n-d.pdf
NTMFS5C612NT1G
Hersteller: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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4+5.99 EUR
10+3.82 EUR
100+2.95 EUR
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NVMFS5C612NT1G nvmfs5c612n-d.pdf
NVMFS5C612NT1G
Hersteller: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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NVMFS5C612NT1G nvmfs5c612n-d.pdf
NVMFS5C612NT1G
Hersteller: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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3+8.23 EUR
10+5.74 EUR
100+4.24 EUR
500+3.74 EUR
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TND314S-TL-E ENA0420-D.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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TND314S-TL-E ENA0420-D.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
auf Bestellung 19750 Stücke:
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SN74LS90D sn74ls90
SN74LS90D
Hersteller: onsemi
Description: IC DECADE COUNTER 4-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
Count Rate: 42 MHz
Number of Bits per Element: 4
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204+2.73 EUR
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NLVVHC1G86DFT2G
NLVVHC1G86DFT2G
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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2197+0.27 EUR
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NLVVHC1G86DFT1G
NLVVHC1G86DFT1G
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NLVVHC1G86DFT1G
NLVVHC1G86DFT1G
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 1936 Stücke:
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31+0.69 EUR
38+0.57 EUR
45+0.48 EUR
100+0.26 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.13 EUR
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MOC3011VM MOC3010-12M,MOC3020-23M.pdf
MOC3011VM
Hersteller: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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LA6502-TLM-E
LA6502-TLM-E
Hersteller: onsemi
Description: IC MOTOR DRIVER 48HSSOP
Packaging: Bulk
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
auf Bestellung 5571 Stücke:
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177+3.33 EUR
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LA6502-MPB-E
LA6502-MPB-E
Hersteller: onsemi
Description: IC MOTOR DRIVER 48HSSOP
Packaging: Tube
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
auf Bestellung 1609 Stücke:
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177+3.33 EUR
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FDFMA2P853 FDFMA2P853-D.pdf
FDFMA2P853
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Produkt ist nicht verfügbar
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MC74HC4852AN
MC74HC4852AN
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 400OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2V ~ 6V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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1375+0.49 EUR
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MC74HC4852ANG
MC74HC4852ANG
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 400OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2V ~ 6V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 3213 Stücke:
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592+0.99 EUR
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NCP1852AFCCT1G NCP1852%2CA.pdf
NCP1852AFCCT1G
Hersteller: onsemi
Description: IC BAT CHG LI-ION 1CL 25FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, FCBGA
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 25-FlipChip (2.55x2.2)
Charge Current - Max: 1.8A
Fault Protection: Over Voltage
Voltage - Supply (Max): 7.3V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
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