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NTD25P03LT4 NTD25P03LT4 onsemi ntd25p03l-d.pdf Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Produkt ist nicht verfügbar
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STD25P03LT4G STD25P03LT4G onsemi Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Produkt ist nicht verfügbar
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MC74VHC4053MG MC74VHC4053MG onsemi mc74vhc4051-d.pdf Description: IC SWITCH SPDTX3 100OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Produkt ist nicht verfügbar
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FQP13N06 FQP13N06 onsemi FQP13N06.pdf Description: MOSFET N-CH 60V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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DTA144WM3T5G DTA144WM3T5G onsemi dta144w-d.pdf Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DTA144WM3T5G DTA144WM3T5G onsemi dta144w-d.pdf Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DTA144WM3T5G DTA144WM3T5G onsemi dta144w-d.pdf Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 149473 Stücke:
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8435+0.07 EUR
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DTA144EM3T5G DTA144EM3T5G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 849745 Stücke:
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7359+0.07 EUR
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DTA144TT1 DTA144TT1 onsemi DTA144TT1-D.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTA144WET1 DTA144WET1 onsemi DTA_SDTA114EET1_Series.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MUN5113T1G MUN5113T1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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MUN5113T1G MUN5113T1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
Mindestbestellmenge: 11539
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SMUN5113T1G SMUN5113T1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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SMUN5113T1G SMUN5113T1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 83600 Stücke:
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8103+0.06 EUR
Mindestbestellmenge: 8103
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NCV8668ABD250R2G NCV8668ABD250R2G onsemi ncv8668-d.pdf Description: IC REG LINEAR 5V 150MA 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 44 µA
Qualification: AEC-Q100
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197+2.37 EUR
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DBD250G onsemi DBD250.pdf Description: BRIDGE RECT 1PHASE 600V 6A
Packaging: Bulk
Package / Case: 4-Square
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3800 Stücke:
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MUN5113T3G MUN5113T3G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 209850 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
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NSVMUN5113DW1T3G NSVMUN5113DW1T3G onsemi dta144ed-d.pdf Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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NSVMUN5113DW1T3G NSVMUN5113DW1T3G onsemi dta144ed-d.pdf Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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FCA20N60 FCA20N60 onsemi fca20n60_f109-d.pdf Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 445 Stücke:
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2+10.84 EUR
30+6.25 EUR
120+5.23 EUR
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HGTG20N60B3 HGTG20N60B3 onsemi hgtg20n60b3-d.pdf Description: IGBT 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
Switching Energy: 475µJ (on), 1.05mJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Produkt ist nicht verfügbar
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AR1335CSSC32SMD20-RC1 onsemi Description: 13 MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
auf Bestellung 2352 Stücke:
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1+34.07 EUR
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NTHL017N60S5H NTHL017N60S5H onsemi nthl017n60s5h-d.pdf Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
auf Bestellung 2468 Stücke:
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1+24.78 EUR
10+17.64 EUR
450+13.76 EUR
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SZESDM3551N2T5G SZESDM3551N2T5G onsemi esdm3551-d.pdf Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZESDM3551N2T5G SZESDM3551N2T5G onsemi esdm3551-d.pdf Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7091 Stücke:
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33+0.55 EUR
39+0.45 EUR
47+0.38 EUR
100+0.21 EUR
250+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2500+0.10 EUR
Mindestbestellmenge: 33
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MC10H165P MC10H165P onsemi MC10H165-D.pdf Description: IC PRIORITY ENCOD 1 X 8:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:4
Type: Priority Encoder
Operating Temperature: 0°C ~ 75°C
Voltage - Supply: -4.94V ~ -5.46V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar
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LC749402BG-TLM-H onsemi ONSMS35933-1.pdf?t.download=true&u=5oefqw Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
Produkt ist nicht verfügbar
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LC749402BG-TLM-H onsemi ONSMS35933-1.pdf?t.download=true&u=5oefqw Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
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CAT1021WI-30-G onsemi Description: IC REG LINEAR
Packaging: Bulk
DigiKey Programmable: Not Verified
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CAT1021LI-30-G CAT1021LI-30-G onsemi CAT1021-23_Rev2011.pdf Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
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CAT1021LI-30-G CAT1021LI-30-G onsemi CAT1021-23_Rev2011.pdf Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LE25S161CA-Z1 LE25S161CA-Z1 onsemi le25s161-d.pdf Description: IC FLASH 16MBIT SPI 70MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FQP10N20C FQP10N20C onsemi FAIRS45967-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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FQI4N90TU FQI4N90TU onsemi FQI4N90-D.pdf Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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FQI4N90TU FQI4N90TU onsemi FQI4N90-D.pdf Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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BC213 BC213 onsemi Description: TRANS PNP 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NDT01N60T1G NDT01N60T1G onsemi ndd01n60-d.pdf Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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FQD1N60CTM FQD1N60CTM onsemi fqu1n60c-d.pdf Description: MOSFET N-CH 600V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
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FQD1N60CTM FQD1N60CTM onsemi fqu1n60c-d.pdf Description: MOSFET N-CH 600V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
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NCP10670BD060R2G NCP10670BD060R2G onsemi ncp10670-d.pdf Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Power (Watts): 2.7 W
Produkt ist nicht verfügbar
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NCP10670BD060R2G NCP10670BD060R2G onsemi ncp10670-d.pdf Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Power (Watts): 2.7 W
Produkt ist nicht verfügbar
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NCP10670BD100R2G NCP10670BD100R2G onsemi ncp10670-d.pdf Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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NCP10670BD100R2G NCP10670BD100R2G onsemi ncp10670-d.pdf Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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CAT93C46RLI-G CAT93C46RLI-G onsemi CAT93C46R.pdf Description: IC EEPROM 1KBIT 4MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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CAT93C46RLI-G CAT93C46RLI-G onsemi CAT93C46R.pdf Description: IC EEPROM 1KBIT 4MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT93C46YI-G CAT93C46YI-G onsemi CAT93C46_Rev2013.pdf Description: IC EEPROM 1K SPI 2MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT5401YI-10-26645 CAT5401YI-10-26645 onsemi CATSS01763-1.pdf?t.download=true&u=5oefqw Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CAT5401WI-10 onsemi CATSS01763-1.pdf?t.download=true&u=5oefqw Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-SOIC
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CAT5401YI-10 CAT5401YI-10 onsemi CATSS01763-1.pdf?t.download=true&u=5oefqw Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CAT5401YI-25 CAT5401YI-25 onsemi CATSS01763-1.pdf?t.download=true&u=5oefqw Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 2.5k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
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NCP1070P100G NCP1070P100G onsemi ncp1070-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.3V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.2 V
Power (Watts): 14 W
Produkt ist nicht verfügbar
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NCP1076ABP065G NCP1076ABP065G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 31 W
Produkt ist nicht verfügbar
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NCP1077ABP065G NCP1077ABP065G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 19 W
Produkt ist nicht verfügbar
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NCP1077AAP065G NCP1077AAP065G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 31 W
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LA7952-E-ON onsemi Description: VIDEO SWITCH FOR TV/VCR USE
Packaging: Bulk
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FQI8N60CTU FQI8N60CTU onsemi fqi8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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FQI8N60CTU FQI8N60CTU onsemi fqi8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar
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LB11685AV-MPB-H LB11685AV-MPB-H onsemi Description: IC MOTOR DRIVER 4.5V-18V 24SSOPJ
Packaging: Tube
Package / Case: 24-LSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: 24-SSOP-J
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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FDS6609A FDS6609A onsemi FDS6609A.pdf Description: MOSFET P-CH 30V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V
Produkt ist nicht verfügbar
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74AUP1G58FHX 74AUP1G58FHX onsemi 74aup1g58-d.pdf Description: IC GATE UNIV 2INPUT 6-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-MicroPak2™
Number of Circuits: 1
Produkt ist nicht verfügbar
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NTD25P03LT4 ntd25p03l-d.pdf
NTD25P03LT4
Hersteller: onsemi
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Produkt ist nicht verfügbar
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STD25P03LT4G
STD25P03LT4G
Hersteller: onsemi
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Produkt ist nicht verfügbar
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MC74VHC4053MG mc74vhc4051-d.pdf
MC74VHC4053MG
Hersteller: onsemi
Description: IC SWITCH SPDTX3 100OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Produkt ist nicht verfügbar
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FQP13N06 FQP13N06.pdf
FQP13N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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DTA144WM3T5G dta144w-d.pdf
DTA144WM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DTA144WM3T5G dta144w-d.pdf
DTA144WM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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DTA144WM3T5G dta144w-d.pdf
DTA144WM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 149473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8435+0.07 EUR
Mindestbestellmenge: 8435
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DTA144EM3T5G dta144e-d.pdf
DTA144EM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 849745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7359+0.07 EUR
Mindestbestellmenge: 7359
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DTA144TT1 DTA144TT1-D.pdf
DTA144TT1
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTA144WET1 DTA_SDTA114EET1_Series.pdf
DTA144WET1
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MUN5113T1G dta144e-d.pdf
MUN5113T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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MUN5113T1G dta144e-d.pdf
MUN5113T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
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SMUN5113T1G dta144e-d.pdf
SMUN5113T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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SMUN5113T1G dta144e-d.pdf
SMUN5113T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 83600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8103+0.06 EUR
Mindestbestellmenge: 8103
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NCV8668ABD250R2G ncv8668-d.pdf
NCV8668ABD250R2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 44 µA
Qualification: AEC-Q100
auf Bestellung 14514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
197+2.37 EUR
Mindestbestellmenge: 197
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DBD250G DBD250.pdf
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 600V 6A
Packaging: Bulk
Package / Case: 4-Square
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+2.65 EUR
Mindestbestellmenge: 176
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MUN5113T3G dta144e-d.pdf
MUN5113T3G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 209850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
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NSVMUN5113DW1T3G dta144ed-d.pdf
NSVMUN5113DW1T3G
Hersteller: onsemi
Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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NSVMUN5113DW1T3G dta144ed-d.pdf
NSVMUN5113DW1T3G
Hersteller: onsemi
Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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FCA20N60 fca20n60_f109-d.pdf
FCA20N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.84 EUR
30+6.25 EUR
120+5.23 EUR
Mindestbestellmenge: 2
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HGTG20N60B3 hgtg20n60b3-d.pdf
HGTG20N60B3
Hersteller: onsemi
Description: IGBT 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
Switching Energy: 475µJ (on), 1.05mJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Produkt ist nicht verfügbar
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AR1335CSSC32SMD20-RC1
Hersteller: onsemi
Description: 13 MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.07 EUR
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NTHL017N60S5H nthl017n60s5h-d.pdf
NTHL017N60S5H
Hersteller: onsemi
Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.78 EUR
10+17.64 EUR
450+13.76 EUR
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SZESDM3551N2T5G esdm3551-d.pdf
SZESDM3551N2T5G
Hersteller: onsemi
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZESDM3551N2T5G esdm3551-d.pdf
SZESDM3551N2T5G
Hersteller: onsemi
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
39+0.45 EUR
47+0.38 EUR
100+0.21 EUR
250+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2500+0.10 EUR
Mindestbestellmenge: 33
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MC10H165P MC10H165-D.pdf
MC10H165P
Hersteller: onsemi
Description: IC PRIORITY ENCOD 1 X 8:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:4
Type: Priority Encoder
Operating Temperature: 0°C ~ 75°C
Voltage - Supply: -4.94V ~ -5.46V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar
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LC749402BG-TLM-H ONSMS35933-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
Produkt ist nicht verfügbar
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LC749402BG-TLM-H ONSMS35933-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
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Anzahl Preis
63+7.43 EUR
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CAT1021WI-30-G
Hersteller: onsemi
Description: IC REG LINEAR
Packaging: Bulk
DigiKey Programmable: Not Verified
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260+1.78 EUR
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CAT1021LI-30-G CAT1021-23_Rev2011.pdf
CAT1021LI-30-G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
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258+1.79 EUR
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CAT1021LI-30-G CAT1021-23_Rev2011.pdf
CAT1021LI-30-G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LE25S161CA-Z1 le25s161-d.pdf
LE25S161CA-Z1
Hersteller: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FQP10N20C FAIRS45967-1.pdf?t.download=true&u=5oefqw
FQP10N20C
Hersteller: onsemi
Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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FQI4N90TU FQI4N90-D.pdf
FQI4N90TU
Hersteller: onsemi
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 3792 Stücke:
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Anzahl Preis
208+2.24 EUR
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FQI4N90TU FQI4N90-D.pdf
FQI4N90TU
Hersteller: onsemi
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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BC213
BC213
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NDT01N60T1G ndd01n60-d.pdf
NDT01N60T1G
Hersteller: onsemi
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
auf Bestellung 137821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
910+0.54 EUR
Mindestbestellmenge: 910
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FQD1N60CTM fqu1n60c-d.pdf
FQD1N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
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FQD1N60CTM fqu1n60c-d.pdf
FQD1N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
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NCP10670BD060R2G ncp10670-d.pdf
NCP10670BD060R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Power (Watts): 2.7 W
Produkt ist nicht verfügbar
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NCP10670BD060R2G ncp10670-d.pdf
NCP10670BD060R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Power (Watts): 2.7 W
Produkt ist nicht verfügbar
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NCP10670BD100R2G ncp10670-d.pdf
NCP10670BD100R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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NCP10670BD100R2G ncp10670-d.pdf
NCP10670BD100R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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CAT93C46RLI-G CAT93C46R.pdf
CAT93C46RLI-G
Hersteller: onsemi
Description: IC EEPROM 1KBIT 4MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
950+0.52 EUR
Mindestbestellmenge: 950
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CAT93C46RLI-G CAT93C46R.pdf
CAT93C46RLI-G
Hersteller: onsemi
Description: IC EEPROM 1KBIT 4MHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT93C46YI-G CAT93C46_Rev2013.pdf
CAT93C46YI-G
Hersteller: onsemi
Description: IC EEPROM 1K SPI 2MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT5401YI-10-26645 CATSS01763-1.pdf?t.download=true&u=5oefqw
CAT5401YI-10-26645
Hersteller: onsemi
Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
auf Bestellung 2421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
105+4.68 EUR
Mindestbestellmenge: 105
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CAT5401WI-10 CATSS01763-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-SOIC
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
52+9.46 EUR
Mindestbestellmenge: 52
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CAT5401YI-10 CATSS01763-1.pdf?t.download=true&u=5oefqw
CAT5401YI-10
Hersteller: onsemi
Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
auf Bestellung 709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
52+9.46 EUR
Mindestbestellmenge: 52
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CAT5401YI-25 CATSS01763-1.pdf?t.download=true&u=5oefqw
CAT5401YI-25
Hersteller: onsemi
Description: CAT5401 - QUAD DIGITALLY PROGRAM
Packaging: Bulk
Resistance (Ohms): 2.5k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 100
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
52+9.39 EUR
Mindestbestellmenge: 52
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NCP1070P100G ncp1070-d.pdf
NCP1070P100G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.3V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.2 V
Power (Watts): 14 W
Produkt ist nicht verfügbar
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NCP1076ABP065G ncp1076a-d.pdf
NCP1076ABP065G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 31 W
Produkt ist nicht verfügbar
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NCP1077ABP065G ncp1076a-d.pdf
NCP1077ABP065G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 19 W
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NCP1077AAP065G ncp1076a-d.pdf
NCP1077AAP065G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 31 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
281+1.80 EUR
Mindestbestellmenge: 281
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LA7952-E-ON
Hersteller: onsemi
Description: VIDEO SWITCH FOR TV/VCR USE
Packaging: Bulk
auf Bestellung 33225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
579+0.85 EUR
Mindestbestellmenge: 579
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FQI8N60CTU fqi8n60c-d.pdf
FQI8N60CTU
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
auf Bestellung 24810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
208+2.35 EUR
Mindestbestellmenge: 208
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FQI8N60CTU fqi8n60c-d.pdf
FQI8N60CTU
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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LB11685AV-MPB-H
LB11685AV-MPB-H
Hersteller: onsemi
Description: IC MOTOR DRIVER 4.5V-18V 24SSOPJ
Packaging: Tube
Package / Case: 24-LSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: 24-SSOP-J
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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FDS6609A FDS6609A.pdf
FDS6609A
Hersteller: onsemi
Description: MOSFET P-CH 30V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V
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74AUP1G58FHX 74aup1g58-d.pdf
74AUP1G58FHX
Hersteller: onsemi
Description: IC GATE UNIV 2INPUT 6-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-MicroPak2™
Number of Circuits: 1
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