Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (147133) > Seite 1146 nach 2453

Wählen Sie Seite:   [  << Vorherige Seite ]  1 245 490 735 980 1141 1142 1143 1144 1145 1146 1147 1148 1149 1150 1151 1225 1470 1715 1960 2205 2450 2453  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
LC709205FXE-01TBG LC709205FXE-01TBG onsemi lc709205f-d.pdf Description: IC FUEL GAUGE LI-ION 1C 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Fault Protection: Over Current, Over Voltage
auf Bestellung 1363 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+3.73 EUR
25+3.18 EUR
100+2.55 EUR
250+2.25 EUR
500+2.06 EUR
1000+1.90 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
LM2901VN LM2901VN onsemi lm339-d.pdf Description: IC COMP QUAD SGL SUPPLY 14DIP
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCA22N60N FCA22N60N onsemi fca22n60n-d.pdf Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT244WMX MM74HCT244WMX onsemi mm74hct244-d.pdf Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT244WMX MM74HCT244WMX onsemi mm74hct244-d.pdf Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-SOIC
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
12+1.47 EUR
25+1.23 EUR
100+0.95 EUR
250+0.82 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT244MTC MM74HCT244MTC onsemi mm74hct244-d.pdf Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.31 EUR
13+1.41 EUR
75+0.96 EUR
150+0.86 EUR
300+0.76 EUR
525+0.70 EUR
1050+0.64 EUR
2550+0.57 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSC 74LVXC3245QSC onsemi DS_488_74LVXC3245.pdf Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 6735 Stücke:
Lieferzeit 10-14 Tag (e)
281+1.66 EUR
Mindestbestellmenge: 281
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSC 74LVXC3245QSC onsemi DS_488_74LVXC3245.pdf Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSCX 74LVXC3245QSCX onsemi 74lvxc3245-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSCX 74LVXC3245QSCX onsemi 74lvxc3245-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT240MTC MM74HCT240MTC onsemi mm74hct244-d.pdf Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
auf Bestellung 4678 Stücke:
Lieferzeit 10-14 Tag (e)
920+0.55 EUR
Mindestbestellmenge: 920
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT240MTC MM74HCT240MTC onsemi mm74hct244-d.pdf Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMT185N60S5H NTMT185N60S5H onsemi ntmt185n60s5h-d.pdf Description: SUPERFET5 FAST 185MOHM PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
3SK264-5-TG-E 3SK264-5-TG-E onsemi 3SK264.pdf Description: RF MOSFET 6V CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
3SK264-5-TG-E 3SK264-5-TG-E onsemi 3SK264.pdf Description: RF MOSFET 6V CP4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD261CGTA KSD261CGTA onsemi KSD261.pdf Description: TRANS NPN 20V 0.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD261CGTA KSD261CGTA onsemi KSD261.pdf Description: TRANS NPN 20V 0.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTBG020N120SC1 NTBG020N120SC1 onsemi ntbg020n120sc1-d.pdf Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+39.08 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG020N120SC1 NTBG020N120SC1 onsemi ntbg020n120sc1-d.pdf Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.10 EUR
10+43.86 EUR
100+39.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG020N120SC1 NVBG020N120SC1 onsemi nvbg020n120sc1-d.pdf Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
800+56.23 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG020N120SC1 NVBG020N120SC1 onsemi nvbg020n120sc1-d.pdf Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 7528 Stücke:
Lieferzeit 10-14 Tag (e)
1+79.27 EUR
10+59.85 EUR
100+56.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL060N065SC1 NTHL060N065SC1 onsemi nthl060n065sc1-d.pdf Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 7026 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.15 EUR
30+9.07 EUR
120+9.06 EUR
510+8.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG060N065SC1 NTBG060N065SC1 onsemi ntbg060n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+8.94 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG060N065SC1 NTBG060N065SC1 onsemi ntbg060n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 2308 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.62 EUR
10+12.91 EUR
100+9.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L060N065SC1 NTH4L060N065SC1 onsemi nth4l060n065sc1-d.pdf Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 3199 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.54 EUR
30+10.45 EUR
120+9.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L060N065SC1 NVH4L060N065SC1 onsemi nvh4l060n065sc1-d.pdf Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.07 EUR
30+13.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG060N065SC1 NVBG060N065SC1 onsemi nvbg060n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+16.56 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG060N065SC1 NVBG060N065SC1 onsemi nvbg060n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 3176 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.73 EUR
10+20.62 EUR
100+16.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVHL060N065SC1 NVHL060N065SC1 onsemi nvhl060n065sc1-d.pdf Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.27 EUR
10+17.83 EUR
450+13.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C64VP2I-GT3 CAT24C64VP2I-GT3 onsemi CAT24C64.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C64VP2I-GT3 CAT24C64VP2I-GT3 onsemi CAT24C64.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 24773 Stücke:
Lieferzeit 10-14 Tag (e)
809+0.57 EUR
Mindestbestellmenge: 809
Im Einkaufswagen  Stück im Wert von  UAH
LP2950ACDT-3.3 LP2950ACDT-3.3 onsemi lp2950-d.pdf Description: IC REG LINEAR 3.3V 100MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.45V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
398+1.23 EUR
Mindestbestellmenge: 398
Im Einkaufswagen  Stück im Wert von  UAH
CS59201GDR8 CS59201GDR8 onsemi CS59201GDR8.pdf Description: IC DIFFERENTIAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Differential
Applications: Winchester Servo Preamplifier
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC04MTC MM74HC04MTC onsemi mm74hc04-d.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NBXDBB017LN1TAG NBXDBB017LN1TAG onsemi NBXxxx017.pdf Description: IC OSC XTAL DUAL FREQ 6-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 6-CLCC
Mounting Type: Surface Mount
Frequency: 156.25MHz, 312.5MHz
Type: Oscillator, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Supplier Device Package: 6-CLCC (7x5)
Current - Supply: 78 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858ALT1 BC858ALT1 onsemi bc856alt1-d.pdf Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
PCFFS40120AF onsemi pcffs40120af-d.pdf Description: DIODE SIL CARB 1.2KV WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Current - Average Rectified (Io): 61A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
629+15.63 EUR
Mindestbestellmenge: 629
Im Einkaufswagen  Stück im Wert von  UAH
SMBT1505T3G SMBT1505T3G onsemi Description: DIODE STD REC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBT1505T3G SMBT1505T3G onsemi Description: DIODE STD REC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBT2001T1G SMBT2001T1G onsemi Description: DIODE STD REC SC74
Packaging: Tape & Reel (TR)
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMBT2001T1G SMBT2001T1G onsemi Description: DIODE STD REC SC74
Packaging: Cut Tape (CT)
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
76+0.23 EUR
122+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MBR30H100CTH MBR30H100CTH onsemi Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
auf Bestellung 3280 Stücke:
Lieferzeit 10-14 Tag (e)
213+2.18 EUR
Mindestbestellmenge: 213
Im Einkaufswagen  Stück im Wert von  UAH
MBR30H100CTH MBR30H100CTH onsemi Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-TRBR ASX340AT2C00XPED0-TRBR onsemi Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+12.87 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-DRBR ASX340AT3C00XPED0-DRBR onsemi asx340at-d.pdf Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.03 EUR
5+17.72 EUR
10+16.90 EUR
25+15.94 EUR
40+15.50 EUR
80+14.91 EUR
440+13.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-TPBR ASX340AT3C00XPED0-TPBR onsemi PdfFile_625252.pdf Description: VGA 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-TPBR ASX340AT3C00XPED0-TPBR onsemi PdfFile_625252.pdf Description: VGA 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.17 EUR
5+18.76 EUR
10+17.90 EUR
25+16.89 EUR
50+16.22 EUR
100+15.62 EUR
500+14.46 EUR
1000+14.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-TPBR ASX340AT2C00XPED0-TPBR onsemi PdfFile_625252.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-TPBR ASX340AT2C00XPED0-TPBR onsemi PdfFile_625252.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.17 EUR
5+18.76 EUR
10+17.90 EUR
25+16.89 EUR
50+16.22 EUR
100+15.62 EUR
500+14.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-DRBR ASX344ATSC00XUEA0-DRBR onsemi asx344at?pdf=Y Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.03 EUR
5+24.04 EUR
10+22.97 EUR
25+21.72 EUR
40+21.15 EUR
80+20.38 EUR
440+18.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-DPBR ASX344ATSC00XUEA0-DPBR onsemi asx344at?pdf=Y Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.18 EUR
5+25.06 EUR
10+23.94 EUR
25+22.65 EUR
40+22.05 EUR
80+21.25 EUR
440+19.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-DPBR2 ASX340AT3C00XPED0-DPBR2 onsemi asx340at-d.html Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.96 EUR
5+18.15 EUR
10+17.48 EUR
25+16.68 EUR
50+16.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-DPBR2 ASX344ATSC00XUEA0-DPBR2 onsemi Description: VGA 1/4 CIS SOC
Packaging: Tray
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.19 EUR
5+30.29 EUR
10+29.21 EUR
25+27.91 EUR
50+27.03 EUR
100+26.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-DPBR ASX340AT2C00XPED0-DPBR onsemi asx340at-d.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-TRBR ASX344ATSC00XUEA0-TRBR onsemi asx344at?pdf=Y Description: IMAGE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-TRBR ASX344ATSC00XUEA0-TRBR onsemi asx344at?pdf=Y Description: IMAGE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD17N08LTM FQD17N08LTM onsemi fqd17n08l-d.pdf Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD17N08LTM FQD17N08LTM onsemi fqd17n08l-d.pdf Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL3700S HCPL3700S onsemi hcpl3700-d.pdf Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL3700SDV HCPL3700SDV onsemi hcpl3700-d.pdf Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LC709205FXE-01TBG lc709205f-d.pdf
LC709205FXE-01TBG
Hersteller: onsemi
Description: IC FUEL GAUGE LI-ION 1C 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Fault Protection: Over Current, Over Voltage
auf Bestellung 1363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
10+3.73 EUR
25+3.18 EUR
100+2.55 EUR
250+2.25 EUR
500+2.06 EUR
1000+1.90 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
LM2901VN lm339-d.pdf
LM2901VN
Hersteller: onsemi
Description: IC COMP QUAD SGL SUPPLY 14DIP
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCA22N60N fca22n60n-d.pdf
FCA22N60N
Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT244WMX mm74hct244-d.pdf
MM74HCT244WMX
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT244WMX mm74hct244-d.pdf
MM74HCT244WMX
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-SOIC
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.47 EUR
25+1.23 EUR
100+0.95 EUR
250+0.82 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT244MTC mm74hct244-d.pdf
MM74HCT244MTC
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
13+1.41 EUR
75+0.96 EUR
150+0.86 EUR
300+0.76 EUR
525+0.70 EUR
1050+0.64 EUR
2550+0.57 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSC DS_488_74LVXC3245.pdf
74LVXC3245QSC
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 6735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
281+1.66 EUR
Mindestbestellmenge: 281
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSC DS_488_74LVXC3245.pdf
74LVXC3245QSC
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSCX 74lvxc3245-d.pdf
74LVXC3245QSCX
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVXC3245QSCX 74lvxc3245-d.pdf
74LVXC3245QSCX
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT240MTC mm74hct244-d.pdf
MM74HCT240MTC
Hersteller: onsemi
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
auf Bestellung 4678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
920+0.55 EUR
Mindestbestellmenge: 920
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT240MTC mm74hct244-d.pdf
MM74HCT240MTC
Hersteller: onsemi
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMT185N60S5H ntmt185n60s5h-d.pdf
NTMT185N60S5H
Hersteller: onsemi
Description: SUPERFET5 FAST 185MOHM PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
3SK264-5-TG-E 3SK264.pdf
3SK264-5-TG-E
Hersteller: onsemi
Description: RF MOSFET 6V CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
3SK264-5-TG-E 3SK264.pdf
3SK264-5-TG-E
Hersteller: onsemi
Description: RF MOSFET 6V CP4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD261CGTA KSD261.pdf
KSD261CGTA
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD261CGTA KSD261.pdf
KSD261CGTA
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTBG020N120SC1 ntbg020n120sc1-d.pdf
NTBG020N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+39.08 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG020N120SC1 ntbg020n120sc1-d.pdf
NTBG020N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.10 EUR
10+43.86 EUR
100+39.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG020N120SC1 nvbg020n120sc1-d.pdf
NVBG020N120SC1
Hersteller: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+56.23 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG020N120SC1 nvbg020n120sc1-d.pdf
NVBG020N120SC1
Hersteller: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 7528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+79.27 EUR
10+59.85 EUR
100+56.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTHL060N065SC1 nthl060n065sc1-d.pdf
NTHL060N065SC1
Hersteller: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 7026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.15 EUR
30+9.07 EUR
120+9.06 EUR
510+8.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG060N065SC1 ntbg060n065sc1-d.pdf
NTBG060N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.94 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NTBG060N065SC1 ntbg060n065sc1-d.pdf
NTBG060N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 2308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.62 EUR
10+12.91 EUR
100+9.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L060N065SC1 nth4l060n065sc1-d.pdf
NTH4L060N065SC1
Hersteller: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 3199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.54 EUR
30+10.45 EUR
120+9.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L060N065SC1 nvh4l060n065sc1-d.pdf
NVH4L060N065SC1
Hersteller: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.07 EUR
30+13.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG060N065SC1 nvbg060n065sc1-d.pdf
NVBG060N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+16.56 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG060N065SC1 nvbg060n065sc1-d.pdf
NVBG060N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 3176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.73 EUR
10+20.62 EUR
100+16.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVHL060N065SC1 nvhl060n065sc1-d.pdf
NVHL060N065SC1
Hersteller: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.27 EUR
10+17.83 EUR
450+13.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C64VP2I-GT3 CAT24C64.pdf
CAT24C64VP2I-GT3
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C64VP2I-GT3 CAT24C64.pdf
CAT24C64VP2I-GT3
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 24773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
809+0.57 EUR
Mindestbestellmenge: 809
Im Einkaufswagen  Stück im Wert von  UAH
LP2950ACDT-3.3 lp2950-d.pdf
LP2950ACDT-3.3
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 100MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.45V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
398+1.23 EUR
Mindestbestellmenge: 398
Im Einkaufswagen  Stück im Wert von  UAH
CS59201GDR8 CS59201GDR8.pdf
CS59201GDR8
Hersteller: onsemi
Description: IC DIFFERENTIAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Differential
Applications: Winchester Servo Preamplifier
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC04MTC mm74hc04-d.pdf
MM74HC04MTC
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NBXDBB017LN1TAG NBXxxx017.pdf
NBXDBB017LN1TAG
Hersteller: onsemi
Description: IC OSC XTAL DUAL FREQ 6-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 6-CLCC
Mounting Type: Surface Mount
Frequency: 156.25MHz, 312.5MHz
Type: Oscillator, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Supplier Device Package: 6-CLCC (7x5)
Current - Supply: 78 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858ALT1 bc856alt1-d.pdf
BC858ALT1
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
PCFFS40120AF pcffs40120af-d.pdf
Hersteller: onsemi
Description: DIODE SIL CARB 1.2KV WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Current - Average Rectified (Io): 61A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
629+15.63 EUR
Mindestbestellmenge: 629
Im Einkaufswagen  Stück im Wert von  UAH
SMBT1505T3G
SMBT1505T3G
Hersteller: onsemi
Description: DIODE STD REC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBT1505T3G
SMBT1505T3G
Hersteller: onsemi
Description: DIODE STD REC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBT2001T1G
SMBT2001T1G
Hersteller: onsemi
Description: DIODE STD REC SC74
Packaging: Tape & Reel (TR)
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SMBT2001T1G
SMBT2001T1G
Hersteller: onsemi
Description: DIODE STD REC SC74
Packaging: Cut Tape (CT)
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
76+0.23 EUR
122+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MBR30H100CTH
MBR30H100CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
auf Bestellung 3280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
213+2.18 EUR
Mindestbestellmenge: 213
Im Einkaufswagen  Stück im Wert von  UAH
MBR30H100CTH
MBR30H100CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-TRBR
ASX340AT2C00XPED0-TRBR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+12.87 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-DRBR asx340at-d.pdf
ASX340AT3C00XPED0-DRBR
Hersteller: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.03 EUR
5+17.72 EUR
10+16.90 EUR
25+15.94 EUR
40+15.50 EUR
80+14.91 EUR
440+13.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-TPBR PdfFile_625252.pdf
ASX340AT3C00XPED0-TPBR
Hersteller: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-TPBR PdfFile_625252.pdf
ASX340AT3C00XPED0-TPBR
Hersteller: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.17 EUR
5+18.76 EUR
10+17.90 EUR
25+16.89 EUR
50+16.22 EUR
100+15.62 EUR
500+14.46 EUR
1000+14.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-TPBR PdfFile_625252.pdf
ASX340AT2C00XPED0-TPBR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-TPBR PdfFile_625252.pdf
ASX340AT2C00XPED0-TPBR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.17 EUR
5+18.76 EUR
10+17.90 EUR
25+16.89 EUR
50+16.22 EUR
100+15.62 EUR
500+14.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-DRBR asx344at?pdf=Y
ASX344ATSC00XUEA0-DRBR
Hersteller: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.03 EUR
5+24.04 EUR
10+22.97 EUR
25+21.72 EUR
40+21.15 EUR
80+20.38 EUR
440+18.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-DPBR asx344at?pdf=Y
ASX344ATSC00XUEA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.18 EUR
5+25.06 EUR
10+23.94 EUR
25+22.65 EUR
40+22.05 EUR
80+21.25 EUR
440+19.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT3C00XPED0-DPBR2 asx340at-d.html
ASX340AT3C00XPED0-DPBR2
Hersteller: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.96 EUR
5+18.15 EUR
10+17.48 EUR
25+16.68 EUR
50+16.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-DPBR2
ASX344ATSC00XUEA0-DPBR2
Hersteller: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tray
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.19 EUR
5+30.29 EUR
10+29.21 EUR
25+27.91 EUR
50+27.03 EUR
100+26.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ASX340AT2C00XPED0-DPBR asx340at-d.pdf
ASX340AT2C00XPED0-DPBR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-TRBR asx344at?pdf=Y
ASX344ATSC00XUEA0-TRBR
Hersteller: onsemi
Description: IMAGE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ASX344ATSC00XUEA0-TRBR asx344at?pdf=Y
ASX344ATSC00XUEA0-TRBR
Hersteller: onsemi
Description: IMAGE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD17N08LTM fqd17n08l-d.pdf
FQD17N08LTM
Hersteller: onsemi
Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD17N08LTM fqd17n08l-d.pdf
FQD17N08LTM
Hersteller: onsemi
Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL3700S hcpl3700-d.pdf
HCPL3700S
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL3700SDV hcpl3700-d.pdf
HCPL3700SDV
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 245 490 735 980 1141 1142 1143 1144 1145 1146 1147 1148 1149 1150 1151 1225 1470 1715 1960 2205 2450 2453  [ Nächste Seite >> ]