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MC74HC4051ADTR2G-Q MC74HC4051ADTR2G-Q onsemi Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V, 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP8T
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF, 130pF
Current - Leakage (IS(off)) (Max): 200nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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SE81NLV74HC4051ADTR2G onsemi Description: SE81NLV74HC4051ADTR2G
Packaging: Bulk
Produkt ist nicht verfügbar
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LM7808ACT LM7808ACT onsemi MC7800%28A%2CAE%29%2CNCV7800.pdf Description: IC REG LINEAR 8V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 8V
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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FDMC86324 FDMC86324 onsemi fdmc86324-d.pdf Description: MOSFET N-CH 80V 7A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
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N04L63W2AB27I N04L63W2AB27I onsemi n04l63w2a-d.pdf Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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N04L63W2AB27I N04L63W2AB27I onsemi n04l63w2a-d.pdf Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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NLX1G57CMUTCG NLX1G57CMUTCG onsemi NLX1G57_Rev6_Jul2016.pdf Description: IC LOGIC SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
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NLX1G57CMUTCG NLX1G57CMUTCG onsemi NLX1G57_Rev6_Jul2016.pdf Description: IC LOGIC SMD
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
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NCP3902FCCTBG NCP3902FCCTBG onsemi ncp3902-d.pdf Description: IC PWR SWITCH P-CHAN 2:1 20WLCSP
Features: Sleep Mode
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 9V ~ 15V
Current - Output (Max): 5A
Ratio - Input:Output: 2:1
Supplier Device Package: 20-WLCSP (1.66x2.26)
Fault Protection: Current Limiting, Over Temperature, UVLO
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HUF75637S3ST HUF75637S3ST onsemi HUF75637P3.pdf Description: MOSFET N-CH 100V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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FDS4488 FDS4488 onsemi FDS4488_Rev_C.pdf Description: MOSFET N-CH 30V 7.9A 8SOIC
Packaging: Cut Tape (CT)
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NLX1G332AMX1TCG NLX1G332AMX1TCG onsemi nlx1g332-d.pdf Description: IC GATE OR 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NLX1G332CMUTCG NLX1G332CMUTCG onsemi nlx1g332-d.pdf Description: IC GATE OR 1CH 3-INP 6UDFN
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-UDFN (1x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
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MC74HCT366ADG MC74HCT366ADG onsemi mc74hct366a-d.pdf Description: IC BUFF 2V/6V 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
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NLV74HCT366ADTRG NLV74HCT366ADTRG onsemi MC74HCT366A-D.PDF Description: IC BUFF 2V/6V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
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MC74HCT366ADR2G MC74HCT366ADR2G onsemi mc74hct366a-d.pdf Description: IC BUFF 2V/6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
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MC74HCT366ADR2G MC74HCT366ADR2G onsemi mc74hct366a-d.pdf Description: IC BUFF 2V/6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
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NTD4805NT4G NTD4805NT4G onsemi ntd4805n-d.pdf Description: MOSFET N-CH 30V 12.7A/95A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
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NRVTS5100ETFSTWG NRVTS5100ETFSTWG onsemi nrvts5100etfs-d.pdf Description: DIODE SCHOTTKY 100V 5A 8WDFN
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: 8-WDFN (3.3x3.3)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDFS2P102A FDFS2P102A onsemi FDFS2P102A.pdf description Description: MOSFET P-CH 20V 3.3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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MC74HC1G00DFT1G MC74HC1G00DFT1G onsemi mc74hc1g00-d.pdf Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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FDMS8025S FDMS8025S onsemi fdms8025s-d.pdf Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
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FDMS8025S FDMS8025S onsemi fdms8025s-d.pdf Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
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SBA100-04J SBA100-04J onsemi ONSMS23607-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY, 10A,
Packaging: Bulk
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BAT54ST BAT54ST onsemi BAT54(S)T.pdf Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54ST BAT54ST onsemi BAT54(S)T.pdf Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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SN74LS85D SN74LS85D onsemi sn74ls85 Description: IC MAG COMPARATOR 4BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Active High
Type: Magnitude Comparator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 45ns @ 5V, 15pF
Output Function: AB
Number of Bits: 4
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NRVBA320T3G-VF01 NRVBA320T3G-VF01 onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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NRVUD340T4G-VF01 NRVUD340T4G-VF01 onsemi murd340-d.pdf Description: DIODE STANDARD 400V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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NVBLS1D7N10MCTXG NVBLS1D7N10MCTXG onsemi nvbls1d7n10mc-d.pdf Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBLS1D7N10MCTXG NVBLS1D7N10MCTXG onsemi nvbls1d7n10mc-d.pdf Description: PTNG 100V STD TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.52 EUR
10+9.83 EUR
50+7.82 EUR
100+7.18 EUR
500+6.94 EUR
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NTBLS1D7N10MCTXG NTBLS1D7N10MCTXG onsemi NTBLS1D7N10MC-D.PDF Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Produkt ist nicht verfügbar
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NTBLS1D7N10MCTXG NTBLS1D7N10MCTXG onsemi NTBLS1D7N10MC-D.PDF Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
auf Bestellung 1776 Stücke:
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NTBLS1D5N10MCTXG NTBLS1D5N10MCTXG onsemi NTBLS1D5N10MC-D.PDF Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
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NTBLS1D5N10MCTXG NTBLS1D5N10MCTXG onsemi NTBLS1D5N10MC-D.PDF Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
auf Bestellung 7323 Stücke:
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NRVS1AFL NRVS1AFL onsemi s1mfl-d.pdf Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
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NRVS1AFL NRVS1AFL onsemi s1mfl-d.pdf Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
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30+0.71 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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FAN1086D285X FAN1086D285X onsemi FAN1086.pdf Description: IC REG LINEAR 2.85V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 25°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7.5V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.85V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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AFGHL30T65RQDN AFGHL30T65RQDN onsemi afghl30t65rqdn-d.pdf Description: IGBT FIELD STOP 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/68ns
Switching Energy: 340µJ (on), 320µJ (off)
Test Condition: 400V, 15A, 2.5Ohm, 15V
Gate Charge: 37 nC
Grade: Automotive
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230.8 W
Qualification: AEC-Q101
auf Bestellung 1315 Stücke:
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3+10.39 EUR
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120+4.88 EUR
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FSB50450BS FSB50450BS onsemi fsb50450bs-d.pdf Description: MOSFET IPM 500V 2.2A 23-PWRSMD
Packaging: Bulk
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
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FMS6404CSX FMS6404CSX onsemi ONSM-S-A0003590274-1.pdf?t.download=true&u=5oefqw Description: FMS6404 - PRECISION COMPOSITE VI
Packaging: Bulk
auf Bestellung 7481 Stücke:
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MC74AC74DR2G-Q MC74AC74DR2G-Q onsemi Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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MC74AC74DR2G-Q MC74AC74DR2G-Q onsemi Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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NTBG022N120M3S NTBG022N120M3S onsemi ntbg022n120m3s-d.pdf Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
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NTBG022N120M3S NTBG022N120M3S onsemi ntbg022n120m3s-d.pdf Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 795 Stücke:
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1+37.78 EUR
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50+24.16 EUR
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NTH4L022N120M3S NTH4L022N120M3S onsemi nth4l022n120m3s-d.pdf Description: SIC MOS TO247-4L 22MOHM 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 739 Stücke:
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30+23.7 EUR
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510+19.85 EUR
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NVH4L022N120M3S NVH4L022N120M3S onsemi nvh4l022n120m3s-d.pdf Description: SIC MOS TO247-4L 22MOHM 1200V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Power Dissipation (Max): 352W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
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NVBG022N120M3S NVBG022N120M3S onsemi nvbg022n120m3s-d.pdf Description: SIC MOS D2PAK-7L 22MOHM 1200V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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NVBG022N120M3S NVBG022N120M3S onsemi nvbg022n120m3s-d.pdf Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 27786 Stücke:
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1+48.99 EUR
10+36.76 EUR
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P3P73Z01BWG-08CR P3P73Z01BWG-08CR onsemi Description: IC CLK EMI REDUCTION FREQ 8WDFN
Packaging: Bulk
Package / Case: 8-WDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (2x2)
DigiKey Programmable: Not Verified
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P3P73Z01BWG-08TR P3P73Z01BWG-08TR onsemi Description: IC CLK EMI REDUCTION FREQ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
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MC74HC151ADTR2G-Q MC74HC151ADTR2G-Q onsemi Description: 8-INPUT MULTIPLEXER
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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MC74HC151ADTR2G-Q MC74HC151ADTR2G-Q onsemi Description: 8-INPUT MULTIPLEXER
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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MC74HC151ADR2G-Q MC74HC151ADR2G-Q onsemi mc74hc151a-d.pdf Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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MC74HC589ADR2G-Q MC74HC589ADR2G-Q onsemi mc74hc589a-d.pdf Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
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2500+0.35 EUR
5000+0.33 EUR
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MC74HC589ADR2G-Q MC74HC589ADR2G-Q onsemi mc74hc589a-d.pdf Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
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MC74HC589ADTR2G-Q MC74HC589ADTR2G-Q onsemi mc74hc589a-d.pdf Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
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MC74HC589ADTR2G-Q MC74HC589ADTR2G-Q onsemi mc74hc589a-d.pdf Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
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AR0830CSSM11SMKA1-CP AR0830CSSM11SMKA1-CP onsemi AR0830-PD-D.PDF Description: 8MP 1/3 CIS SO
Packaging: Tray
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AR0830CSSM11SMKA1-CP2 AR0830CSSM11SMKA1-CP2 onsemi create-overview-pdf Description: 8MP 1/3 CIS SO
Packaging: Tray
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MC74HC4051ADTR2G-Q
MC74HC4051ADTR2G-Q
Hersteller: onsemi
Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V, 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP8T
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF, 130pF
Current - Leakage (IS(off)) (Max): 200nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
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SE81NLV74HC4051ADTR2G
Hersteller: onsemi
Description: SE81NLV74HC4051ADTR2G
Packaging: Bulk
Produkt ist nicht verfügbar
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LM7808ACT MC7800%28A%2CAE%29%2CNCV7800.pdf
LM7808ACT
Hersteller: onsemi
Description: IC REG LINEAR 8V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 8V
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FDMC86324 fdmc86324-d.pdf
FDMC86324
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
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N04L63W2AB27I n04l63w2a-d.pdf
N04L63W2AB27I
Hersteller: onsemi
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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65+8.21 EUR
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N04L63W2AB27I n04l63w2a-d.pdf
N04L63W2AB27I
Hersteller: onsemi
Description: IC SRAM 4MBIT PARALLEL 48BGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-BGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NLX1G57CMUTCG NLX1G57_Rev6_Jul2016.pdf
NLX1G57CMUTCG
Hersteller: onsemi
Description: IC LOGIC SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
Produkt ist nicht verfügbar
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NLX1G57CMUTCG NLX1G57_Rev6_Jul2016.pdf
NLX1G57CMUTCG
Hersteller: onsemi
Description: IC LOGIC SMD
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-UDFN (1x1)
Number of Circuits: 1
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NCP3902FCCTBG ncp3902-d.pdf
NCP3902FCCTBG
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 20WLCSP
Features: Sleep Mode
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: USB
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Differential
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 9V ~ 15V
Current - Output (Max): 5A
Ratio - Input:Output: 2:1
Supplier Device Package: 20-WLCSP (1.66x2.26)
Fault Protection: Current Limiting, Over Temperature, UVLO
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3000+1.44 EUR
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HUF75637S3ST HUF75637P3.pdf
HUF75637S3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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FDS4488 FDS4488_Rev_C.pdf
FDS4488
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.9A 8SOIC
Packaging: Cut Tape (CT)
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19+1.11 EUR
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NLX1G332AMX1TCG nlx1g332-d.pdf
NLX1G332AMX1TCG
Hersteller: onsemi
Description: IC GATE OR 1CH 3-INP 6ULLGA
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NLX1G332CMUTCG nlx1g332-d.pdf
NLX1G332CMUTCG
Hersteller: onsemi
Description: IC GATE OR 1CH 3-INP 6UDFN
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-UDFN (1x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HCT366ADG mc74hct366a-d.pdf
MC74HCT366ADG
Hersteller: onsemi
Description: IC BUFF 2V/6V 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
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NLV74HCT366ADTRG MC74HCT366A-D.PDF
NLV74HCT366ADTRG
Hersteller: onsemi
Description: IC BUFF 2V/6V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
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MC74HCT366ADR2G mc74hct366a-d.pdf
MC74HCT366ADR2G
Hersteller: onsemi
Description: IC BUFF 2V/6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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MC74HCT366ADR2G mc74hct366a-d.pdf
MC74HCT366ADR2G
Hersteller: onsemi
Description: IC BUFF 2V/6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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NTD4805NT4G ntd4805n-d.pdf
NTD4805NT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.7A/95A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
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562+1.02 EUR
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NRVTS5100ETFSTWG nrvts5100etfs-d.pdf
NRVTS5100ETFSTWG
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: 8-WDFN (3.3x3.3)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDFS2P102A description FDFS2P102A.pdf
FDFS2P102A
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HC1G00DFT1G mc74hc1g00-d.pdf
MC74HC1G00DFT1G
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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112+0.19 EUR
228+0.092 EUR
266+0.079 EUR
317+0.067 EUR
351+0.06 EUR
500+0.056 EUR
1000+0.052 EUR
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FDMS8025S fdms8025s-d.pdf
FDMS8025S
Hersteller: onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
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3000+0.96 EUR
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FDMS8025S fdms8025s-d.pdf
FDMS8025S
Hersteller: onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 5328 Stücke:
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9+2.49 EUR
11+1.9 EUR
100+1.33 EUR
500+1.13 EUR
1000+1.04 EUR
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SBA100-04J ONSMS23607-1.pdf?t.download=true&u=5oefqw
SBA100-04J
Hersteller: onsemi
Description: RECTIFIER DIODE, SCHOTTKY, 10A,
Packaging: Bulk
auf Bestellung 2432 Stücke:
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AnzahlPrivatkunde
533+1.09 EUR
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BAT54ST BAT54(S)T.pdf
BAT54ST
Hersteller: onsemi
Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT54ST BAT54(S)T.pdf
BAT54ST
Hersteller: onsemi
Description: DIODE ARR SCHOT 30V 100MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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SN74LS85D sn74ls85
SN74LS85D
Hersteller: onsemi
Description: IC MAG COMPARATOR 4BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Active High
Type: Magnitude Comparator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 45ns @ 5V, 15pF
Output Function: AB
Number of Bits: 4
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
198+2.74 EUR
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NRVBA320T3G-VF01 mbra320-d.pdf
NRVBA320T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVUD340T4G-VF01 murd340-d.pdf
NRVUD340T4G-VF01
Hersteller: onsemi
Description: DIODE STANDARD 400V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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NVBLS1D7N10MCTXG nvbls1d7n10mc-d.pdf
NVBLS1D7N10MCTXG
Hersteller: onsemi
Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBLS1D7N10MCTXG nvbls1d7n10mc-d.pdf
NVBLS1D7N10MCTXG
Hersteller: onsemi
Description: PTNG 100V STD TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.52 EUR
10+9.83 EUR
50+7.82 EUR
100+7.18 EUR
500+6.94 EUR
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NTBLS1D7N10MCTXG NTBLS1D7N10MC-D.PDF
NTBLS1D7N10MCTXG
Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Produkt ist nicht verfügbar
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NTBLS1D7N10MCTXG NTBLS1D7N10MC-D.PDF
NTBLS1D7N10MCTXG
Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
auf Bestellung 1776 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.82 EUR
10+10.75 EUR
100+7.89 EUR
500+7.76 EUR
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NTBLS1D5N10MCTXG NTBLS1D5N10MC-D.PDF
NTBLS1D5N10MCTXG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
2000+7.29 EUR
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NTBLS1D5N10MCTXG NTBLS1D5N10MC-D.PDF
NTBLS1D5N10MCTXG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
auf Bestellung 7323 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.58 EUR
10+12.02 EUR
50+9.65 EUR
100+8.94 EUR
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NRVS1AFL s1mfl-d.pdf
NRVS1AFL
Hersteller: onsemi
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVS1AFL s1mfl-d.pdf
NRVS1AFL
Hersteller: onsemi
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 1832 Stücke:
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AnzahlPrivatkunde
30+0.71 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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FAN1086D285X FAN1086.pdf
FAN1086D285X
Hersteller: onsemi
Description: IC REG LINEAR 2.85V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 25°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7.5V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.85V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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AFGHL30T65RQDN afghl30t65rqdn-d.pdf
AFGHL30T65RQDN
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/68ns
Switching Energy: 340µJ (on), 320µJ (off)
Test Condition: 400V, 15A, 2.5Ohm, 15V
Gate Charge: 37 nC
Grade: Automotive
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230.8 W
Qualification: AEC-Q101
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.39 EUR
30+5.87 EUR
120+4.88 EUR
510+4.14 EUR
1020+3.99 EUR
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FSB50450BS fsb50450bs-d.pdf
FSB50450BS
Hersteller: onsemi
Description: MOSFET IPM 500V 2.2A 23-PWRSMD
Packaging: Bulk
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
auf Bestellung 1350 Stücke:
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57+9.69 EUR
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FMS6404CSX ONSM-S-A0003590274-1.pdf?t.download=true&u=5oefqw
FMS6404CSX
Hersteller: onsemi
Description: FMS6404 - PRECISION COMPOSITE VI
Packaging: Bulk
auf Bestellung 7481 Stücke:
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AnzahlPrivatkunde
256+2.23 EUR
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MC74AC74DR2G-Q
MC74AC74DR2G-Q
Hersteller: onsemi
Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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MC74AC74DR2G-Q
MC74AC74DR2G-Q
Hersteller: onsemi
Description: DUAL D FLIP-FLOP POSITIVE EDGE T
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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NTBG022N120M3S ntbg022n120m3s-d.pdf
NTBG022N120M3S
Hersteller: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Produkt ist nicht verfügbar
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NTBG022N120M3S ntbg022n120m3s-d.pdf
NTBG022N120M3S
Hersteller: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.78 EUR
10+26.99 EUR
50+24.16 EUR
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NTH4L022N120M3S nth4l022n120m3s-d.pdf
NTH4L022N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 22MOHM 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 739 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.76 EUR
30+23.7 EUR
120+20.62 EUR
510+19.85 EUR
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NVH4L022N120M3S nvh4l022n120m3s-d.pdf
NVH4L022N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 22MOHM 1200V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Power Dissipation (Max): 352W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
auf Bestellung 246803 Stücke:
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1+76.06 EUR
30+52.09 EUR
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NVBG022N120M3S nvbg022n120m3s-d.pdf
NVBG022N120M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
auf Bestellung 27200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+30.04 EUR
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NVBG022N120M3S nvbg022n120m3s-d.pdf
NVBG022N120M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 27786 Stücke:
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AnzahlPrivatkunde
1+48.99 EUR
10+36.76 EUR
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P3P73Z01BWG-08CR
P3P73Z01BWG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
Packaging: Bulk
Package / Case: 8-WDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (2x2)
DigiKey Programmable: Not Verified
auf Bestellung 246000 Stücke:
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231+2.61 EUR
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P3P73Z01BWG-08TR
P3P73Z01BWG-08TR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
DigiKey Programmable: Not Verified
auf Bestellung 42500 Stücke:
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207+2.93 EUR
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MC74HC151ADTR2G-Q
MC74HC151ADTR2G-Q
Hersteller: onsemi
Description: 8-INPUT MULTIPLEXER
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MC74HC151ADTR2G-Q
MC74HC151ADTR2G-Q
Hersteller: onsemi
Description: 8-INPUT MULTIPLEXER
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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MC74HC151ADR2G-Q mc74hc151a-d.pdf
MC74HC151ADR2G-Q
Hersteller: onsemi
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MC74HC589ADR2G-Q mc74hc589a-d.pdf
MC74HC589ADR2G-Q
Hersteller: onsemi
Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
auf Bestellung 55000 Stücke:
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AnzahlPrivatkunde
2500+0.35 EUR
5000+0.33 EUR
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MC74HC589ADR2G-Q mc74hc589a-d.pdf
MC74HC589ADR2G-Q
Hersteller: onsemi
Description: IC TRI-STATE 8BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
38+0.56 EUR
43+0.5 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
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MC74HC589ADTR2G-Q mc74hc589a-d.pdf
MC74HC589ADTR2G-Q
Hersteller: onsemi
Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.33 EUR
Mindestbestellmenge: 2500 Stücke
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MC74HC589ADTR2G-Q mc74hc589a-d.pdf
MC74HC589ADTR2G-Q
Hersteller: onsemi
Description: IC TRI-STATE 8BIT 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Number of Bits per Element: 8
auf Bestellung 4793 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
39+0.55 EUR
44+0.49 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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AR0830CSSM11SMKA1-CP AR0830-PD-D.PDF
AR0830CSSM11SMKA1-CP
Hersteller: onsemi
Description: 8MP 1/3 CIS SO
Packaging: Tray
auf Bestellung 2858 Stücke:
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AnzahlPrivatkunde
1+43.48 EUR
5+39.73 EUR
10+38.35 EUR
25+36.69 EUR
50+35.55 EUR
100+34.51 EUR
500+32.4 EUR
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AR0830CSSM11SMKA1-CP2 create-overview-pdf
AR0830CSSM11SMKA1-CP2
Hersteller: onsemi
Description: 8MP 1/3 CIS SO
Packaging: Tray
auf Bestellung 250 Stücke:
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AnzahlPrivatkunde
1+62.52 EUR
10+52.09 EUR
25+46.14 EUR
100+44.65 EUR
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