Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (145561) > Seite 1219 nach 2427

Wählen Sie Seite:   [  << Vorherige Seite ]  1 242 484 726 968 1210 1214 1215 1216 1217 1218 1219 1220 1221 1222 1223 1224 1452 1694 1936 2178 2420 2427  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
UJ3D1250K UJ3D1250K onsemi da008694 Description: DIODE SIL CARB 1200V 50A TO2473
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6397 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.83 EUR
30+36.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1202TS UJ3D1202TS onsemi UJ3D1202TS-D.PDF Description: DIODE SIL CARBIDE 1200V 2A TO220
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 109pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 22 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 6499 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.16 EUR
50+3.64 EUR
100+3.31 EUR
500+2.71 EUR
1000+2.51 EUR
2000+2.42 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06506TS UJ3D06506TS onsemi DS_UJ3D06506TS.pdf Description: DIODE SIL CARB 650V 6A TO220-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 196pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 57301 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.64 EUR
25+3.18 EUR
100+2.74 EUR
250+2.51 EUR
500+2.36 EUR
1000+2.26 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06508TS UJ3D06508TS onsemi DS_UJ3D06508TS.pdf Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 28073 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.27 EUR
25+3.71 EUR
100+3.21 EUR
250+2.95 EUR
500+2.75 EUR
1000+2.67 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06510TS UJ3D06510TS onsemi DS_UJ3D06510TS.pdf Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 11657 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.86 EUR
25+4.22 EUR
100+3.64 EUR
250+3.36 EUR
500+3.13 EUR
1000+3.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06520TS UJ3D06520TS onsemi DS_UJ3D06520TS.pdf Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 6004 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.33 EUR
25+7.26 EUR
100+6.25 EUR
250+5.77 EUR
500+5.37 EUR
1000+5.18 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210TS UJ3D1210TS onsemi UJ3D1210TS-D.PDF Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
auf Bestellung 9913 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.73 EUR
50+6.95 EUR
100+6.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD UJ3D1220KSD onsemi UJ3D1220KSD-D.PDF Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.37 EUR
30+16.12 EUR
120+13.88 EUR
510+13.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06504TS UJ3D06504TS onsemi DS_UJ3D06504TS.pdf Description: DIODE SIL CARB 650V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 118pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 22758 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.83 EUR
25+2.48 EUR
100+2.13 EUR
250+1.95 EUR
500+1.83 EUR
1000+1.76 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06512TS UJ3D06512TS onsemi DS_UJ3D06512TS.pdf Description: DIODE SIL CARB 650V 12A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10601 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.98 EUR
50+5.12 EUR
100+4.94 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06516TS UJ3D06516TS onsemi DS_UJ3D06516TS.pdf Description: DIODE SIL CARB 650V 16A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
25+6.31 EUR
100+5.45 EUR
250+5 EUR
500+4.66 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210K2 UJ3D1210K2 onsemi UJ3D1210K2-D.PDF Description: DIODE SIL CARB 1200V 10A TO2472
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
auf Bestellung 6415 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.28 EUR
30+7.77 EUR
120+6.89 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06530TS UJ3D06530TS onsemi DS_UJ3D06530TS.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
auf Bestellung 7715 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.17 EUR
25+10.59 EUR
100+9.14 EUR
250+8.41 EUR
500+7.84 EUR
1000+7.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220K2 UJ3D1220K2 onsemi da008692 Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.79 EUR
25+13.72 EUR
100+11.85 EUR
250+10.91 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06520KSD UJ3D06520KSD onsemi UJ3D06520KSD-D.PDF Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 7418 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.53 EUR
30+9.08 EUR
120+8.21 EUR
510+7.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210KSD UJ3D1210KSD onsemi UJ3D1210KSD-D.PDF Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.58 EUR
30+10.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210KS UJ3D1210KS onsemi UJ3D1210KS-D.PDF Description: DIODE SIL CARB 1200V 10A TO2473
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.26 EUR
10+12.01 EUR
100+10.4 EUR
600+7.85 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NBXDBA009LNHTAG NBXDBA009LNHTAG onsemi Description: IC OSC XTAL DUAL FREQ 6CLCC
Current - Supply: 79 mA
Supplier Device Package: 6-CLCC (7x5)
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Type: Oscillator, Crystal
Frequency: 75MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC4316M MM74HC4316M onsemi MM74HC4316.pdf Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN5776UCX FAN5776UCX onsemi fan5776-d.pdf Description: IC LED DRV RGLTR PWM 12WLCSP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN5776UCX FAN5776UCX onsemi fan5776-d.pdf Description: IC LED DRV RGLTR PWM 12WLCSP
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HT8822N onsemi Description: IC PWR CONV TBD 8-MDIP
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33164P-5RAG MC33164P-5RAG onsemi mc34164-d.pdf Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.33V
Supplier Device Package: TO-92 (TO-226)
DigiKey Programmable: Not Verified
auf Bestellung 8708 Stücke:
Lieferzeit 10-14 Tag (e)
975+0.62 EUR
Mindestbestellmenge: 975 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC112M 74VHC112M onsemi ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 132480 Stücke:
Lieferzeit 10-14 Tag (e)
457+1.32 EUR
Mindestbestellmenge: 457 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC112M 74VHC112M onsemi ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UF3C170400B7S UF3C170400B7S onsemi UF3C170400B7S-D.PDF Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C170400B7S UF3C170400B7S onsemi UF3C170400B7S-D.PDF Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.42 EUR
10+14.1 EUR
100+10.95 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060K3S UJ4C075060K3S onsemi uj4c075060k3s-d.pdf Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 14453 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.72 EUR
30+15.65 EUR
120+14.68 EUR
510+12.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060K4S UJ4C075060K4S onsemi UJ4C075060K4S-D.PDF Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.15 EUR
30+14.65 EUR
120+12.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C120080K3S UJ3C120080K3S onsemi uj3c120080k3s-d.pdf Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 3989 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.89 EUR
30+19.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075018B7S UJ4SC075018B7S onsemi UJ4SC075018B7S-D.PDF Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
800+21.6 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075018B7S UJ4SC075018B7S onsemi UJ4SC075018B7S-D.PDF Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13763 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.59 EUR
10+27.01 EUR
100+26.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC120040B7S UF3SC120040B7S onsemi UF3SC120040B7S-D.PDF Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
800+36.1 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC120040B7S UF3SC120040B7S onsemi UF3SC120040B7S-D.PDF Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5457 Stücke:
Lieferzeit 10-14 Tag (e)
1+56.44 EUR
10+44.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075005L8S UJ4SC075005L8S onsemi UJ4SC075005L8S-D.PDF Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+61.63 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075005L8S UJ4SC075005L8S onsemi UJ4SC075005L8S-D.PDF Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 9017 Stücke:
Lieferzeit 10-14 Tag (e)
1+93.47 EUR
10+75.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120400B7S UF3C120400B7S onsemi UF3C120400B7S-D.PDF Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120400B7S UF3C120400B7S onsemi UF3C120400B7S-D.PDF Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.95 EUR
10+11.57 EUR
50+9.27 EUR
100+8.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060B7S UJ4C075060B7S onsemi UJ4C075060B7S-D.PDF Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
800+9.79 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060B7S UJ4C075060B7S onsemi UJ4C075060B7S-D.PDF Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10678 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.48 EUR
10+14.18 EUR
100+11.98 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120150B7S UF3C120150B7S onsemi UF3C120150B7S-D.PDF Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+10.09 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120150B7S UF3C120150B7S onsemi UF3C120150B7S-D.PDF Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 2767 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.84 EUR
10+16.54 EUR
50+13.41 EUR
100+12.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065080B7S UF3C065080B7S onsemi UF3C065080B7S-D.PDF Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
800+10.78 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065080B7S UF3C065080B7S onsemi UF3C065080B7S-D.PDF Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 15461 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.05 EUR
10+15.35 EUR
100+13.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075033B7S UJ4C075033B7S onsemi UJ4C075033B7S-D.PDF Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
800+13.33 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075033B7S UJ4C075033B7S onsemi UJ4C075033B7S-D.PDF Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.86 EUR
10+19.55 EUR
50+16.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120080B7S UF3C120080B7S onsemi UF3C120080B7S-D.PDF Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+17.41 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120080B7S UF3C120080B7S onsemi UF3C120080B7S-D.PDF Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.77 EUR
10+22.61 EUR
100+21.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC065030B7S UF3SC065030B7S onsemi UF3SC065030B7S-D.PDF Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 57600 Stücke:
Lieferzeit 10-14 Tag (e)
800+25.11 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC065030B7S UF3SC065030B7S onsemi UF3SC065030B7S-D.PDF Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 58404 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.64 EUR
10+32.97 EUR
100+30.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075011B7S UJ4SC075011B7S onsemi UJ4SC075011B7S-D.PDF Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
800+34.26 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075011B7S UJ4SC075011B7S onsemi UJ4SC075011B7S-D.PDF Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3860 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.37 EUR
10+41.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L013N120M3S NTH4L013N120M3S onsemi NTH4L013N120M3S-D.PDF Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.24 EUR
10+47.36 EUR
50+40.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MOC8102 MOC8102 onsemi CNY17x, CNY17Fx, MOC810x.pdf Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 117% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 73% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC100E137FN MC100E137FN onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
76+7.97 EUR
Mindestbestellmenge: 76 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MC10E137FNR2G MC10E137FNR2G onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Number of Bits per Element: 8
Count Rate: 2.2 GHz
Voltage - Supply: 4.2 V ~ 5.7 V
Supplier Device Package: 28-PLCC (11.51x11.51)
Timing: Asynchronous
Trigger Type: Positive, Negative
Direction: Up
Operating Temperature: 0°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
auf Bestellung 6681 Stücke:
Lieferzeit 10-14 Tag (e)
47+12.92 EUR
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MC100E137FNR2G MC100E137FNR2G onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Number of Bits per Element: 8
Count Rate: 2.2 GHz
Voltage - Supply: 4.2 V ~ 5.5 V
Supplier Device Package: 28-PLCC (11.51x11.51)
Timing: Asynchronous
Trigger Type: Positive, Negative
Direction: Up
Operating Temperature: 0°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
47+12.92 EUR
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MC10E137FNG MC10E137FNG onsemi mc10e137-d.pdf Description: IC BINARY COUNTER 8-BIT 28PLCC
Voltage - Supply: 4.2 V ~ 5.7 V
Supplier Device Package: 28-PLCC (11.51x11.51)
Timing: Asynchronous
Trigger Type: Positive, Negative
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
Number of Bits per Element: 8
Count Rate: 2.2 GHz
Direction: Up
Operating Temperature: 0°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
auf Bestellung 3215 Stücke:
Lieferzeit 10-14 Tag (e)
35+17.56 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SN74LS367ADR2 SN74LS367ADR2 onsemi MOTOD030-5-322.pdf?t.download=true&u=5oefqw Description: BUFFER/LINE DRIVER 6-CH
Packaging: Bulk
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
1397+0.38 EUR
Mindestbestellmenge: 1397 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCT6 MCT6 onsemi MCT62-D.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 20889 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.45 EUR
50+1.42 EUR
100+1.3 EUR
500+1.11 EUR
1000+1.05 EUR
2000+0.99 EUR
5000+0.93 EUR
10000+0.89 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1250K da008694
UJ3D1250K
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 50A TO2473
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6397 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+46.83 EUR
30+36.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1202TS UJ3D1202TS-D.PDF
UJ3D1202TS
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1200V 2A TO220
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 109pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 22 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 6499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.16 EUR
50+3.64 EUR
100+3.31 EUR
500+2.71 EUR
1000+2.51 EUR
2000+2.42 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06506TS DS_UJ3D06506TS.pdf
UJ3D06506TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 6A TO220-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 196pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 57301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
25+3.18 EUR
100+2.74 EUR
250+2.51 EUR
500+2.36 EUR
1000+2.26 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06508TS DS_UJ3D06508TS.pdf
UJ3D06508TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 28073 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.27 EUR
25+3.71 EUR
100+3.21 EUR
250+2.95 EUR
500+2.75 EUR
1000+2.67 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06510TS DS_UJ3D06510TS.pdf
UJ3D06510TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 11657 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.86 EUR
25+4.22 EUR
100+3.64 EUR
250+3.36 EUR
500+3.13 EUR
1000+3.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06520TS DS_UJ3D06520TS.pdf
UJ3D06520TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 6004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.33 EUR
25+7.26 EUR
100+6.25 EUR
250+5.77 EUR
500+5.37 EUR
1000+5.18 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210TS UJ3D1210TS-D.PDF
UJ3D1210TS
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
auf Bestellung 9913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.73 EUR
50+6.95 EUR
100+6.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD UJ3D1220KSD-D.PDF
UJ3D1220KSD
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.37 EUR
30+16.12 EUR
120+13.88 EUR
510+13.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06504TS DS_UJ3D06504TS.pdf
UJ3D06504TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 118pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 22758 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
25+2.48 EUR
100+2.13 EUR
250+1.95 EUR
500+1.83 EUR
1000+1.76 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06512TS DS_UJ3D06512TS.pdf
UJ3D06512TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 12A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10601 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.98 EUR
50+5.12 EUR
100+4.94 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06516TS DS_UJ3D06516TS.pdf
UJ3D06516TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 16A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.25 EUR
25+6.31 EUR
100+5.45 EUR
250+5 EUR
500+4.66 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210K2 UJ3D1210K2-D.PDF
UJ3D1210K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2472
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
auf Bestellung 6415 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.28 EUR
30+7.77 EUR
120+6.89 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06530TS DS_UJ3D06530TS.pdf
UJ3D06530TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
auf Bestellung 7715 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.17 EUR
25+10.59 EUR
100+9.14 EUR
250+8.41 EUR
500+7.84 EUR
1000+7.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220K2 da008692
UJ3D1220K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.79 EUR
25+13.72 EUR
100+11.85 EUR
250+10.91 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06520KSD UJ3D06520KSD-D.PDF
UJ3D06520KSD
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 7418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.53 EUR
30+9.08 EUR
120+8.21 EUR
510+7.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210KSD UJ3D1210KSD-D.PDF
UJ3D1210KSD
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.58 EUR
30+10.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1210KS UJ3D1210KS-D.PDF
UJ3D1210KS
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2473
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.26 EUR
10+12.01 EUR
100+10.4 EUR
600+7.85 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NBXDBA009LNHTAG
NBXDBA009LNHTAG
Hersteller: onsemi
Description: IC OSC XTAL DUAL FREQ 6CLCC
Current - Supply: 79 mA
Supplier Device Package: 6-CLCC (7x5)
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Type: Oscillator, Crystal
Frequency: 75MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC4316M MM74HC4316.pdf
MM74HC4316M
Hersteller: onsemi
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN5776UCX fan5776-d.pdf
FAN5776UCX
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN5776UCX fan5776-d.pdf
FAN5776UCX
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HT8822N
Hersteller: onsemi
Description: IC PWR CONV TBD 8-MDIP
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33164P-5RAG mc34164-d.pdf
MC33164P-5RAG
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.33V
Supplier Device Package: TO-92 (TO-226)
DigiKey Programmable: Not Verified
auf Bestellung 8708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
975+0.62 EUR
Mindestbestellmenge: 975 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC112M ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw
74VHC112M
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 132480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
457+1.32 EUR
Mindestbestellmenge: 457 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74VHC112M ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw
74VHC112M
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UF3C170400B7S UF3C170400B7S-D.PDF
UF3C170400B7S
Hersteller: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C170400B7S UF3C170400B7S-D.PDF
UF3C170400B7S
Hersteller: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.42 EUR
10+14.1 EUR
100+10.95 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060K3S uj4c075060k3s-d.pdf
UJ4C075060K3S
Hersteller: onsemi
Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 14453 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.72 EUR
30+15.65 EUR
120+14.68 EUR
510+12.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060K4S UJ4C075060K4S-D.PDF
UJ4C075060K4S
Hersteller: onsemi
Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.15 EUR
30+14.65 EUR
120+12.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C120080K3S uj3c120080k3s-d.pdf
UJ3C120080K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 3989 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+29.89 EUR
30+19.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075018B7S UJ4SC075018B7S-D.PDF
UJ4SC075018B7S
Hersteller: onsemi
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+21.6 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075018B7S UJ4SC075018B7S-D.PDF
UJ4SC075018B7S
Hersteller: onsemi
Description: 750V/18MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
auf Bestellung 13763 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.59 EUR
10+27.01 EUR
100+26.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC120040B7S UF3SC120040B7S-D.PDF
UF3SC120040B7S
Hersteller: onsemi
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+36.1 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC120040B7S UF3SC120040B7S-D.PDF
UF3SC120040B7S
Hersteller: onsemi
Description: 1200V/40MOHM, SIC, STACKED FAST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+56.44 EUR
10+44.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075005L8S UJ4SC075005L8S-D.PDF
UJ4SC075005L8S
Hersteller: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+61.63 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075005L8S UJ4SC075005L8S-D.PDF
UJ4SC075005L8S
Hersteller: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 9017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+93.47 EUR
10+75.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120400B7S UF3C120400B7S-D.PDF
UF3C120400B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120400B7S UF3C120400B7S-D.PDF
UF3C120400B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 739 pF @ 800 V
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.95 EUR
10+11.57 EUR
50+9.27 EUR
100+8.53 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060B7S UJ4C075060B7S-D.PDF
UJ4C075060B7S
Hersteller: onsemi
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+9.79 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060B7S UJ4C075060B7S-D.PDF
UJ4C075060B7S
Hersteller: onsemi
Description: 750V/60MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 10678 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.48 EUR
10+14.18 EUR
100+11.98 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120150B7S UF3C120150B7S-D.PDF
UF3C120150B7S
Hersteller: onsemi
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+10.09 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120150B7S UF3C120150B7S-D.PDF
UF3C120150B7S
Hersteller: onsemi
Description: 1200V/150MOHM, SIC, FAST CASCODE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
auf Bestellung 2767 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.84 EUR
10+16.54 EUR
50+13.41 EUR
100+12.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065080B7S UF3C065080B7S-D.PDF
UF3C065080B7S
Hersteller: onsemi
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+10.78 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065080B7S UF3C065080B7S-D.PDF
UF3C065080B7S
Hersteller: onsemi
Description: SICFET N-CH 650V 27A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 136.4W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
auf Bestellung 15461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.05 EUR
10+15.35 EUR
100+13.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075033B7S UJ4C075033B7S-D.PDF
UJ4C075033B7S
Hersteller: onsemi
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+13.33 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075033B7S UJ4C075033B7S-D.PDF
UJ4C075033B7S
Hersteller: onsemi
Description: 750V/33MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.86 EUR
10+19.55 EUR
50+16.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120080B7S UF3C120080B7S-D.PDF
UF3C120080B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+17.41 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3C120080B7S UF3C120080B7S-D.PDF
UF3C120080B7S
Hersteller: onsemi
Description: SICFET N-CH 1200V 28.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.77 EUR
10+22.61 EUR
100+21.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC065030B7S UF3SC065030B7S-D.PDF
UF3SC065030B7S
Hersteller: onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 57600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+25.11 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UF3SC065030B7S UF3SC065030B7S-D.PDF
UF3SC065030B7S
Hersteller: onsemi
Description: 650V/30MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 58404 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+45.64 EUR
10+32.97 EUR
100+30.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075011B7S UJ4SC075011B7S-D.PDF
UJ4SC075011B7S
Hersteller: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+34.26 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075011B7S UJ4SC075011B7S-D.PDF
UJ4SC075011B7S
Hersteller: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+54.37 EUR
10+41.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTH4L013N120M3S NTH4L013N120M3S-D.PDF
NTH4L013N120M3S
Hersteller: onsemi
Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.24 EUR
10+47.36 EUR
50+40.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MOC8102 CNY17x, CNY17Fx, MOC810x.pdf
MOC8102
Hersteller: onsemi
Description: OPTOISOLATOR 5.3KV TRANS 6-DIP
Current - DC Forward (If) (Max): 100 mA
Number of Channels: 1
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 117% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 73% @ 10mA
Voltage - Isolation: 5300Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC100E137FN mc10e137-d.pdf
MC100E137FN
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: 0°C ~ 85°C
Direction: Up
Trigger Type: Positive, Negative
Timing: Asynchronous
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply: 4.2 V ~ 5.5 V
Count Rate: 2.2 GHz
Number of Bits per Element: 8
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
76+7.97 EUR
Mindestbestellmenge: 76 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MC10E137FNR2G mc10e137-d.pdf
MC10E137FNR2G
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Number of Bits per Element: 8
Count Rate: 2.2 GHz
Voltage - Supply: 4.2 V ~ 5.7 V
Supplier Device Package: 28-PLCC (11.51x11.51)
Timing: Asynchronous
Trigger Type: Positive, Negative
Direction: Up
Operating Temperature: 0°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
auf Bestellung 6681 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
47+12.92 EUR
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MC100E137FNR2G mc10e137-d.pdf
MC100E137FNR2G
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Number of Bits per Element: 8
Count Rate: 2.2 GHz
Voltage - Supply: 4.2 V ~ 5.5 V
Supplier Device Package: 28-PLCC (11.51x11.51)
Timing: Asynchronous
Trigger Type: Positive, Negative
Direction: Up
Operating Temperature: 0°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
47+12.92 EUR
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MC10E137FNG mc10e137-d.pdf
MC10E137FNG
Hersteller: onsemi
Description: IC BINARY COUNTER 8-BIT 28PLCC
Voltage - Supply: 4.2 V ~ 5.7 V
Supplier Device Package: 28-PLCC (11.51x11.51)
Timing: Asynchronous
Trigger Type: Positive, Negative
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Bulk
Number of Bits per Element: 8
Count Rate: 2.2 GHz
Direction: Up
Operating Temperature: 0°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
auf Bestellung 3215 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+17.56 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SN74LS367ADR2 MOTOD030-5-322.pdf?t.download=true&u=5oefqw
SN74LS367ADR2
Hersteller: onsemi
Description: BUFFER/LINE DRIVER 6-CH
Packaging: Bulk
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1397+0.38 EUR
Mindestbestellmenge: 1397 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MCT6 MCT62-D.pdf
MCT6
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 20889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
50+1.42 EUR
100+1.3 EUR
500+1.11 EUR
1000+1.05 EUR
2000+0.99 EUR
5000+0.93 EUR
10000+0.89 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 242 484 726 968 1210 1214 1215 1216 1217 1218 1219 1220 1221 1222 1223 1224 1452 1694 1936 2178 2420 2427  [ Nächste Seite >> ]