Foto | Bezeichnung | Hersteller | Beschreibung |
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BSS138K | onsemi |
Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V |
auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC8601 | onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD86326 | onsemi |
Description: MOSFET N-CH 80V 8A/37A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V |
auf Bestellung 14960 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC86240 | onsemi |
Description: MOSFET N-CH 150V 4.6A/16A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC86324 | onsemi | Description: MOSFET N-CH 80V 7A/20A POWER33 |
auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7682 | onsemi |
Description: MOSFET N-CH 30V 16A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V |
auf Bestellung 156000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86104 | onsemi |
Description: MOSFET N-CH 100V 7A/16A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V |
auf Bestellung 3118 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86252 | onsemi |
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
Produkt ist nicht verfügbar |
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FDS86106 | onsemi |
Description: MOSFET N-CH 100V 3.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDS86141 | onsemi |
Description: MOSFET N-CH 100V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDS86240 | onsemi |
Description: MOSFET N-CH 150V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86242 | onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS89161 | onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 21750 Stücke: Lieferzeit 21-28 Tag (e) |
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BSS138K | onsemi |
Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V |
auf Bestellung 52132 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC8601 | onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V |
auf Bestellung 9047 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD86326 | onsemi |
Description: MOSFET N-CH 80V 8A/37A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V |
auf Bestellung 14960 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC86240 | onsemi |
Description: MOSFET N-CH 150V 4.6A/16A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 4875 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7682 | onsemi |
Description: MOSFET N-CH 30V 16A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V |
auf Bestellung 158876 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86104 | onsemi |
Description: MOSFET N-CH 100V 7A/16A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V |
auf Bestellung 3198 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86252 | onsemi |
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 2920 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86106 | onsemi |
Description: MOSFET N-CH 100V 3.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V |
auf Bestellung 2379 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86141 | onsemi |
Description: MOSFET N-CH 100V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V |
auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86240 | onsemi |
Description: MOSFET N-CH 150V 7.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V |
auf Bestellung 17460 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS86242 | onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V |
auf Bestellung 26614 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS89161 | onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 21835 Stücke: Lieferzeit 21-28 Tag (e) |
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CAT3661HV3-GT2 | onsemi |
Description: IC LED DRIVER RGLTR 5MA 16TQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100kHz, 130kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 5mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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LMV982MUTAG | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 10UQFN Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.48V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 10-UQFN (1.4x1.8) Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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CAT3661HV3-GT2 | onsemi |
Description: IC LED DRIVER RGLTR 5MA 16TQFN Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100kHz, 130kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 5mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
auf Bestellung 258 Stücke: Lieferzeit 21-28 Tag (e) |
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LMV982MUTAG | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 10UQFN Packaging: Cut Tape (CT) Package / Case: 10-UFQFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.48V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 10-UQFN (1.4x1.8) Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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CM1693-04DE | onsemi |
Description: FILTER LC(PI) 26NH/22PF ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 26nH, C = 22pF (Total) Height: 0.022" (0.55mm) Attenuation Value: -30dB @ 800MHz ~ 6GHz Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 300MHz (Cutoff) ESD Protection: Yes Part Status: Obsolete Number of Channels: 4 Current: 30 mA |
Produkt ist nicht verfügbar |
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CM1693-08DE | onsemi |
Description: FILTER LC(PI) 26NH/22PF ESD SMD Packaging: Tape & Reel (TR) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 26nH, C = 22pF (Total) Height: 0.022" (0.55mm) Attenuation Value: -30dB @ 800MHz ~ 6GHz Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 300MHz (Cutoff) ESD Protection: Yes Part Status: Obsolete Number of Channels: 8 Current: 30 mA |
Produkt ist nicht verfügbar |
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CM2009-02QR | onsemi |
Description: TVS DEVICE DIODE ARRAY 6V 16QSOP Packaging: Tape & Reel (TR) Package / Case: 16-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Applications: DVI-I, VGA Ports Technology: Diode Array Voltage - Clamping: 6V Supplier Device Package: 16-QSOP Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NCP1090DG | onsemi |
Description: IC POE CNTRL 1 CHANNEL 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Controller (PD) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0V ~ 57V Internal Switch(s): Yes Standards: 802.3af (PoE) Supplier Device Package: 8-SOIC Auxiliary Sense: Yes Part Status: Active Number of Channels: 1 Power - Max: 12.95 W |
Produkt ist nicht verfügbar |
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NCP1092DG | onsemi |
Description: IC POE CNTRL 1 CHANNEL 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Controller (PD) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0V ~ 57V Internal Switch(s): Yes Standards: 802.3af (PoE) Supplier Device Package: 8-SOIC Auxiliary Sense: Yes Part Status: Active Number of Channels: 1 Power - Max: 12.95 W |
auf Bestellung 178 Stücke: Lieferzeit 21-28 Tag (e) |
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NCP1599MNTWG | onsemi | Description: IC REG BUCK ADJUSTABLE 3A 6DFN |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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NCP3337MN330R2G | onsemi |
Description: IC REG LINEAR 3.3V 500MA 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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NCP3337MNADJR2G | onsemi |
Description: IC REG LIN POS ADJ 500MA 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Max): 10V Voltage - Output (Min/Fixed): 1.25V Control Features: Enable, Power Good Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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P3P25812AG-08SR | onsemi |
Description: IC CLOCK GEN 8-64MHZ 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 64MHz Input: LVCMOS, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.8V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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P3P25814AG-08SR | onsemi |
Description: IC CLOCK GEN 16-128MHZ 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 128MHz Input: LVCMOS, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.8V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CM1624-08DE | onsemi |
Description: FILTER RLC 40 OHM/12PF/20NH SMD Packaging: Cut Tape (CT) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 40Ohms, C = 12pF, L = 20nH Height: 0.022" (0.55mm) Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: RLC Center / Cutoff Frequency: 300MHz (Cutoff) Resistance - Channel (Ohms): 40 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
auf Bestellung 16610 Stücke: Lieferzeit 21-28 Tag (e) |
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CM1693-08DE | onsemi |
Description: FILTER LC(PI) 26NH/22PF ESD SMD Packaging: Cut Tape (CT) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 26nH, C = 22pF (Total) Height: 0.022" (0.55mm) Attenuation Value: -30dB @ 800MHz ~ 6GHz Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 300MHz (Cutoff) ESD Protection: Yes Part Status: Obsolete Number of Channels: 8 Current: 30 mA |
Produkt ist nicht verfügbar |
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CM2020-00TR | onsemi |
Description: IC HDMI PORT PROTECTION 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: HDMI Port Protection Applications: Consumer Electronics, DVD-RW Players, Set Top Box Supplier Device Package: 38-TSSOP Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CM2031-A0TR | onsemi |
Description: IC HDMI TRANSMITTER 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: HDMI Transmitter Applications: Consumer Electronics, DVD-RW Players, Set Top Box Supplier Device Package: 38-TSSOP Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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NCP1599MNTWG | onsemi | Description: IC REG BUCK ADJUSTABLE 3A 6DFN |
auf Bestellung 7435 Stücke: Lieferzeit 21-28 Tag (e) |
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NCP3337MN330R2G | onsemi |
Description: IC REG LINEAR 3.3V 500MA 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA |
auf Bestellung 4987 Stücke: Lieferzeit 21-28 Tag (e) |
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NCP3337MNADJR2G | onsemi |
Description: IC REG LIN POS ADJ 500MA 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Max): 10V Voltage - Output (Min/Fixed): 1.25V Control Features: Enable, Power Good Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA |
auf Bestellung 13948 Stücke: Lieferzeit 21-28 Tag (e) |
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6N137SDM | onsemi |
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 733000 Stücke: Lieferzeit 21-28 Tag (e) |
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6N137SM | onsemi |
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD Packaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 4717 Stücke: Lieferzeit 21-28 Tag (e) |
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DFB2060 | onsemi |
Description: BRIDGE RECT 1P 600V 20A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 817 Stücke: Lieferzeit 21-28 Tag (e) |
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DFB2560 | onsemi |
Description: BRIDGE RECT 1PHASE 600V 25A TS6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 219 Stücke: Lieferzeit 21-28 Tag (e) |
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FCA76N60N | onsemi |
Description: MOSFET N-CH 600V 76A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V |
Produkt ist nicht verfügbar |
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FCH22N60N | onsemi |
Description: MOSFET N-CH 600V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar |
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FDA38N30 | onsemi |
Description: MOSFET N-CH 300V 38A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 19A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 10128 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMA507PZ | onsemi |
Description: MOSFET P-CH 20V 7.8A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDMC3612 | onsemi |
Description: MOSFET N-CH 100V 3.3A/16A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDMC510P | onsemi |
Description: MOSFET P-CH 20V 12A/18A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V |
auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDME510PZT | onsemi |
Description: MOSFET P-CH 20V 6A MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDML7610S | onsemi |
Description: MOSFET 2N-CH 30V 12A/17A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3x4.5) |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7580 | onsemi |
Description: MOSFET N-CH 25V 15A/29A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V |
Produkt ist nicht verfügbar |
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FDMS7602S | onsemi |
Description: MOSFET 2N-CH 30V 12A/17A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSS138K |
Hersteller: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
9000+ | 0.12 EUR |
FDC8601 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.37 EUR |
6000+ | 1.3 EUR |
FDD86326 |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 14960 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 2.22 EUR |
5000+ | 2.14 EUR |
FDMC86240 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.6 EUR |
FDMC86324 |
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/20A POWER33
Description: MOSFET N-CH 80V 7A/20A POWER33
auf Bestellung 42000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.81 EUR |
6000+ | 1.72 EUR |
FDMS7682 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
auf Bestellung 156000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.66 EUR |
6000+ | 0.62 EUR |
9000+ | 0.58 EUR |
30000+ | 0.57 EUR |
FDMS86104 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
auf Bestellung 3118 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.61 EUR |
FDMS86252 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Produkt ist nicht verfügbar
FDS86106 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
Produkt ist nicht verfügbar
FDS86141 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
Produkt ist nicht verfügbar
FDS86240 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 3.24 EUR |
5000+ | 3.11 EUR |
FDS86242 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.1 EUR |
5000+ | 1.04 EUR |
12500+ | 1 EUR |
FDS89161 |
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 21750 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.69 EUR |
5000+ | 1.63 EUR |
12500+ | 1.57 EUR |
BSS138K |
Hersteller: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
auf Bestellung 52132 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.81 EUR |
46+ | 0.57 EUR |
100+ | 0.29 EUR |
500+ | 0.24 EUR |
1000+ | 0.17 EUR |
FDC8601 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 9047 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.3 EUR |
10+ | 2.7 EUR |
100+ | 2.1 EUR |
500+ | 1.78 EUR |
1000+ | 1.45 EUR |
FDD86326 |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 14960 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.91 EUR |
10+ | 4.09 EUR |
100+ | 3.26 EUR |
500+ | 2.76 EUR |
1000+ | 2.34 EUR |
FDMC86240 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 4875 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.77 EUR |
10+ | 4.79 EUR |
100+ | 3.81 EUR |
500+ | 3.23 EUR |
1000+ | 2.74 EUR |
FDMS7682 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
auf Bestellung 158876 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.72 EUR |
18+ | 1.5 EUR |
100+ | 1.04 EUR |
500+ | 0.87 EUR |
1000+ | 0.74 EUR |
FDMS86104 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
auf Bestellung 3198 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.8 EUR |
10+ | 4.81 EUR |
100+ | 3.83 EUR |
500+ | 3.24 EUR |
1000+ | 2.75 EUR |
FDMS86252 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.43 EUR |
10+ | 4.51 EUR |
100+ | 3.59 EUR |
500+ | 3.04 EUR |
1000+ | 2.58 EUR |
FDS86106 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
auf Bestellung 2379 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.07 EUR |
11+ | 2.52 EUR |
100+ | 1.96 EUR |
500+ | 1.66 EUR |
1000+ | 1.35 EUR |
FDS86141 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
auf Bestellung 55 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.43 EUR |
10+ | 4.88 EUR |
FDS86240 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 17460 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.66 EUR |
10+ | 5.58 EUR |
100+ | 4.52 EUR |
500+ | 4.02 EUR |
1000+ | 3.44 EUR |
FDS86242 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 26614 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.65 EUR |
12+ | 2.17 EUR |
100+ | 1.69 EUR |
500+ | 1.43 EUR |
1000+ | 1.17 EUR |
FDS89161 |
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 21835 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.74 EUR |
10+ | 3.12 EUR |
100+ | 2.48 EUR |
500+ | 2.1 EUR |
1000+ | 1.78 EUR |
CAT3661HV3-GT2 |
Hersteller: onsemi
Description: IC LED DRIVER RGLTR 5MA 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz, 130kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 5mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRIVER RGLTR 5MA 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz, 130kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 5mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
LMV982MUTAG |
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 10-UQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 2 CIRCUIT 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 10-UQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.05 EUR |
CAT3661HV3-GT2 |
Hersteller: onsemi
Description: IC LED DRIVER RGLTR 5MA 16TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz, 130kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 5mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRIVER RGLTR 5MA 16TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz, 130kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 5mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
auf Bestellung 258 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.85 EUR |
10+ | 3.44 EUR |
25+ | 3.25 EUR |
100+ | 2.77 EUR |
250+ | 2.6 EUR |
LMV982MUTAG |
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 10-UQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 2 CIRCUIT 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 10-UQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.47 EUR |
12+ | 2.21 EUR |
25+ | 2.1 EUR |
100+ | 1.72 EUR |
250+ | 1.61 EUR |
500+ | 1.42 EUR |
1000+ | 1.12 EUR |
CM1693-04DE |
Hersteller: onsemi
Description: FILTER LC(PI) 26NH/22PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 26nH, C = 22pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 6GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 4
Current: 30 mA
Description: FILTER LC(PI) 26NH/22PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 26nH, C = 22pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 6GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 4
Current: 30 mA
Produkt ist nicht verfügbar
CM1693-08DE |
Hersteller: onsemi
Description: FILTER LC(PI) 26NH/22PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 26nH, C = 22pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 6GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
Current: 30 mA
Description: FILTER LC(PI) 26NH/22PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 26nH, C = 22pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 6GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
Current: 30 mA
Produkt ist nicht verfügbar
CM2009-02QR |
Hersteller: onsemi
Description: TVS DEVICE DIODE ARRAY 6V 16QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: DVI-I, VGA Ports
Technology: Diode Array
Voltage - Clamping: 6V
Supplier Device Package: 16-QSOP
Number of Circuits: 1
Description: TVS DEVICE DIODE ARRAY 6V 16QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: DVI-I, VGA Ports
Technology: Diode Array
Voltage - Clamping: 6V
Supplier Device Package: 16-QSOP
Number of Circuits: 1
Produkt ist nicht verfügbar
NCP1090DG |
Hersteller: onsemi
Description: IC POE CNTRL 1 CHANNEL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 57V
Internal Switch(s): Yes
Standards: 802.3af (PoE)
Supplier Device Package: 8-SOIC
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 12.95 W
Description: IC POE CNTRL 1 CHANNEL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 57V
Internal Switch(s): Yes
Standards: 802.3af (PoE)
Supplier Device Package: 8-SOIC
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 12.95 W
Produkt ist nicht verfügbar
NCP1092DG |
Hersteller: onsemi
Description: IC POE CNTRL 1 CHANNEL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 57V
Internal Switch(s): Yes
Standards: 802.3af (PoE)
Supplier Device Package: 8-SOIC
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 12.95 W
Description: IC POE CNTRL 1 CHANNEL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 57V
Internal Switch(s): Yes
Standards: 802.3af (PoE)
Supplier Device Package: 8-SOIC
Auxiliary Sense: Yes
Part Status: Active
Number of Channels: 1
Power - Max: 12.95 W
auf Bestellung 178 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.46 EUR |
10+ | 6.71 EUR |
25+ | 6.34 EUR |
100+ | 5.5 EUR |
NCP1599MNTWG |
Hersteller: onsemi
Description: IC REG BUCK ADJUSTABLE 3A 6DFN
Description: IC REG BUCK ADJUSTABLE 3A 6DFN
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.4 EUR |
6000+ | 2.32 EUR |
NCP3337MN330R2G |
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Description: IC REG LINEAR 3.3V 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.32 EUR |
NCP3337MNADJR2G |
Hersteller: onsemi
Description: IC REG LIN POS ADJ 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 10V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Description: IC REG LIN POS ADJ 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 10V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.32 EUR |
6000+ | 1.27 EUR |
P3P25812AG-08SR |
Hersteller: onsemi
Description: IC CLOCK GEN 8-64MHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 64MHz
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN 8-64MHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 64MHz
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
P3P25814AG-08SR |
Hersteller: onsemi
Description: IC CLOCK GEN 16-128MHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 128MHz
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN 16-128MHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 128MHz
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CM1624-08DE |
Hersteller: onsemi
Description: FILTER RLC 40 OHM/12PF/20NH SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 12pF, L = 20nH
Height: 0.022" (0.55mm)
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: RLC
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: FILTER RLC 40 OHM/12PF/20NH SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 12pF, L = 20nH
Height: 0.022" (0.55mm)
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: RLC
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
auf Bestellung 16610 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.76 EUR |
25+ | 1.44 EUR |
50+ | 1.29 EUR |
100+ | 1.17 EUR |
250+ | 1.11 EUR |
500+ | 1 EUR |
1000+ | 0.94 EUR |
CM1693-08DE |
Hersteller: onsemi
Description: FILTER LC(PI) 26NH/22PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 26nH, C = 22pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 6GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
Current: 30 mA
Description: FILTER LC(PI) 26NH/22PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 26nH, C = 22pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 6GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
Current: 30 mA
Produkt ist nicht verfügbar
CM2020-00TR |
Hersteller: onsemi
Description: IC HDMI PORT PROTECTION 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: HDMI Port Protection
Applications: Consumer Electronics, DVD-RW Players, Set Top Box
Supplier Device Package: 38-TSSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC HDMI PORT PROTECTION 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: HDMI Port Protection
Applications: Consumer Electronics, DVD-RW Players, Set Top Box
Supplier Device Package: 38-TSSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CM2031-A0TR |
Hersteller: onsemi
Description: IC HDMI TRANSMITTER 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: HDMI Transmitter
Applications: Consumer Electronics, DVD-RW Players, Set Top Box
Supplier Device Package: 38-TSSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC HDMI TRANSMITTER 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: HDMI Transmitter
Applications: Consumer Electronics, DVD-RW Players, Set Top Box
Supplier Device Package: 38-TSSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
NCP1599MNTWG |
Hersteller: onsemi
Description: IC REG BUCK ADJUSTABLE 3A 6DFN
Description: IC REG BUCK ADJUSTABLE 3A 6DFN
auf Bestellung 7435 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.28 EUR |
10+ | 4.72 EUR |
25+ | 4.45 EUR |
100+ | 3.79 EUR |
250+ | 3.56 EUR |
500+ | 3.12 EUR |
1000+ | 2.58 EUR |
NCP3337MN330R2G |
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Description: IC REG LINEAR 3.3V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
auf Bestellung 4987 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.28 EUR |
10+ | 2.92 EUR |
25+ | 2.77 EUR |
100+ | 2.13 EUR |
250+ | 1.88 EUR |
500+ | 1.78 EUR |
1000+ | 1.39 EUR |
NCP3337MNADJR2G |
Hersteller: onsemi
Description: IC REG LIN POS ADJ 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 10V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Description: IC REG LIN POS ADJ 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Max): 10V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
auf Bestellung 13948 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.28 EUR |
10+ | 2.92 EUR |
25+ | 2.77 EUR |
100+ | 2.13 EUR |
250+ | 1.88 EUR |
500+ | 1.78 EUR |
1000+ | 1.39 EUR |
6N137SDM |
Hersteller: onsemi
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 733000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.65 EUR |
2000+ | 1.56 EUR |
5000+ | 1.53 EUR |
10000+ | 1.49 EUR |
6N137SM |
Hersteller: onsemi
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV 1CH OPEN COLL 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 4717 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.22 EUR |
50+ | 2.04 EUR |
100+ | 1.51 EUR |
500+ | 1.39 EUR |
1000+ | 1.14 EUR |
2000+ | 1.08 EUR |
DFB2060 |
Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 817 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.68 EUR |
10+ | 5.6 EUR |
100+ | 4.53 EUR |
500+ | 4.03 EUR |
DFB2560 |
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 600V 25A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 25A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 219 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.85 EUR |
15+ | 6.59 EUR |
105+ | 5.33 EUR |
FCA76N60N |
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Description: MOSFET N-CH 600V 76A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Produkt ist nicht verfügbar
FCH22N60N |
Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar
FDA38N30 |
Hersteller: onsemi
Description: MOSFET N-CH 300V 38A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 19A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 300V 38A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 19A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 10128 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.36 EUR |
30+ | 5.82 EUR |
120+ | 4.99 EUR |
510+ | 4.43 EUR |
1020+ | 3.8 EUR |
2010+ | 3.58 EUR |
5010+ | 3.43 EUR |
FDMA507PZ |
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.8A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 10 V
Description: MOSFET P-CH 20V 7.8A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 10 V
Produkt ist nicht verfügbar
FDMC3612 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.3A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
FDMC510P |
Hersteller: onsemi
Description: MOSFET P-CH 20V 12A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V
Description: MOSFET P-CH 20V 12A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.26 EUR |
6000+ | 2.17 EUR |
9000+ | 2.1 EUR |
FDME510PZT |
Hersteller: onsemi
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.81 EUR |
10000+ | 0.77 EUR |
FDML7610S |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.22 EUR |
FDMS7580 |
Hersteller: onsemi
Description: MOSFET N-CH 25V 15A/29A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Description: MOSFET N-CH 25V 15A/29A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Produkt ist nicht verfügbar
FDMS7602S |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.49 EUR |
6000+ | 1.42 EUR |
9000+ | 1.36 EUR |