Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SZNUP2301MW6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 1.6pF @ 1MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 2 Voltage - Breakdown (Min): 70V Power Line Protection: No Part Status: Active Bidirectional Channels: 2 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SZNUP4114HMR6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: Yes Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SZNUP4301MR6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TJ) Capacitance @ Frequency: 1.6pF @ 1MHz Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Breakdown (Min): 70V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SZSM05T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 17A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 9.8V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SZSMF12CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 5 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 100W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5740 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
NCP1014LEDR2GEVB | onsemi |
![]() Packaging: Bulk Voltage - Output: 24V Voltage - Input: 90 ~ 265 VAC Current - Output / Channel: 360mA Utilized IC / Part: NCP1014 Supplied Contents: Board(s) Outputs and Type: 1 Isolated Output Part Status: Obsolete Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
FODM8801A | onsemi |
![]() Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 80% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 160% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 45151 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FODM8801B | onsemi |
![]() Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 16778 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FODM8801C | onsemi |
![]() Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 3198 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDD86540 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMC86320 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMF6820A | onsemi |
![]() Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
FDMS3660S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS86300DC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS86500DC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
MDB10S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
MDB6S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Not For New Designs Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
MDB8S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
S320 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FAN3850AUC16X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Packaging: Tape & Reel (TR) Features: ADC, Microphone Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
FDMA905P | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
auf Bestellung 8676 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMB2307NZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDME905PT | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDD86540 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V |
auf Bestellung 15174 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMC86320 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
auf Bestellung 5388 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMF6820A | onsemi |
![]() Packaging: Cut Tape (CT) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
auf Bestellung 2268 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS3660S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 7957 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS86300DC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
auf Bestellung 9569 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS86500DC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V |
auf Bestellung 5318 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FSL146MRBN | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 67% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Part Status: Active Power (Watts): 35 W |
auf Bestellung 468 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FSL206MRBN | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 72% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Power (Watts): 12 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
MDB10S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 65630 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
MDB6S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Not For New Designs Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 3281 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
MDB8S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 8087 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
S320 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V |
auf Bestellung 42413 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FAN3850AUC16X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Packaging: Cut Tape (CT) Features: ADC, Microphone Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
FDMA905P | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
auf Bestellung 8676 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMB2307NZ | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
auf Bestellung 8875 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDME905PT | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V |
auf Bestellung 23587 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FAN9611MX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9V ~ 18V Frequency - Switching: 16.5kHz ~ 525kHz Mode: Boundary Conduction (BCM) Supplier Device Package: 16-SOIC Part Status: Last Time Buy Current - Startup: 80 µA |
auf Bestellung 24677 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDB082N15A | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V |
auf Bestellung 1432 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS3600S | onsemi |
![]() Packaging: Cut Tape (CT) |
auf Bestellung 4185 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS3604AS | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
FDMS86500L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V |
auf Bestellung 8711 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMS86520L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V |
auf Bestellung 4582 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FAN156L6X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V Supplier Device Package: 6-MicroPak Propagation Delay (Max): 400ns (Typ) Current - Quiescent (Max): 17µA Voltage - Input Offset (Max): 15mV @ 5.5V Current - Input Bias (Max): 10pA @ 5.5V CMRR, PSRR (Typ): 68db CMRR, 80db PSRR Hysteresis: 4mV |
auf Bestellung 20344 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FCPF380N60 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FCPF400N60 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
FDP083N15A-F102 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V |
auf Bestellung 2599 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FGA40N65SMD | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 820µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FGA60N65SMD | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/104ns Switching Energy: 1.54mJ (on), 450µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 189 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W |
auf Bestellung 1022 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FSL176MRTUDTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 67% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: TO-220F-6L (U-Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Part Status: Obsolete Power (Watts): 90 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MBR5H100MFST1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
NCV8852DR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 500kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.1V ~ 40V Supplier Device Package: 8-SOIC Synchronous Rectifier: No Control Features: Enable, Frequency Control Output Phases: 1 Duty Cycle (Max): 93% Clock Sync: Yes Grade: Automotive Number of Outputs: 1 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NB3RL02FCT2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-WLCSP (1.57x0.77) Frequency - Max: 52 MHz |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
![]() |
NCN1188MUTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Features: HDMI, USB 2.0, USB 3.0 Package / Case: 12-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB, Video On-State Resistance (Max): 7.5Ohm -3db Bandwidth: 1.8GHz Supplier Device Package: 12-UQFN (1.7x2) Voltage - Supply, Single (V+): 2.7V ~ 5.5V Multiplexer/Demultiplexer Circuit: 3:1 Number of Channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
NCP702SN28T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 16 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
NCP702SN30T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 16 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 3V Control Features: Enable Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
NCP702SN33T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 16 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
MBR5H100MFST1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
auf Bestellung 11810 Stücke: Lieferzeit 10-14 Tag (e) |
|
SZNUP2301MW6T1G |
![]() |
Hersteller: onsemi
Description: TVS DIODE SC88/SC706/SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
Bidirectional Channels: 2
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE SC88/SC706/SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
Bidirectional Channels: 2
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZNUP4114HMR6T1G |
![]() |
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.62 EUR |
SZNUP4301MR6T1G |
![]() |
Hersteller: onsemi
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZSM05T1G |
![]() |
Hersteller: onsemi
Description: TVS DIODE 5VWM 9.8VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 9.8VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZSMF12CT1G |
![]() |
Hersteller: onsemi
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5740 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.16 EUR |
NCP1014LEDR2GEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1014
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 90 ~ 265 VAC
Current - Output / Channel: 360mA
Utilized IC / Part: NCP1014
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR NCP1014
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 90 ~ 265 VAC
Current - Output / Channel: 360mA
Utilized IC / Part: NCP1014
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FODM8801A |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 45151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.32 EUR |
11+ | 1.66 EUR |
100+ | 1.25 EUR |
500+ | 1.07 EUR |
1000+ | 1.01 EUR |
3000+ | 0.93 EUR |
6000+ | 0.89 EUR |
12000+ | 0.86 EUR |
FODM8801B |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 16778 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.36 EUR |
11+ | 1.68 EUR |
150+ | 1.21 EUR |
600+ | 1.07 EUR |
1050+ | 1.02 EUR |
2100+ | 0.97 EUR |
5100+ | 0.92 EUR |
10050+ | 0.88 EUR |
FODM8801C |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 3198 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.75 EUR |
10+ | 1.97 EUR |
100+ | 1.49 EUR |
500+ | 1.28 EUR |
1000+ | 1.22 EUR |
2000+ | 1.16 EUR |
FDD86540 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.69 EUR |
FDMC86320 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.33 EUR |
FDMF6820A |
![]() |
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS3660S |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.31 EUR |
FDMS86300DC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.88 EUR |
FDMS86500DC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 2.44 EUR |
MDB10S |
![]() |
Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.22 EUR |
10000+ | 0.21 EUR |
15000+ | 0.2 EUR |
25000+ | 0.19 EUR |
MDB6S |
![]() |
Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDB8S |
![]() |
Hersteller: onsemi
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.26 EUR |
S320 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.47 EUR |
6000+ | 0.42 EUR |
FAN3850AUC16X |
Hersteller: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Tape & Reel (TR)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Tape & Reel (TR)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMA905P |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
auf Bestellung 8676 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
FDMB2307NZ |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.64 EUR |
6000+ | 0.59 EUR |
FDME905PT |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.52 EUR |
10000+ | 0.48 EUR |
15000+ | 0.47 EUR |
FDD86540 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
auf Bestellung 15174 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.24 EUR |
10+ | 3.41 EUR |
100+ | 2.37 EUR |
500+ | 1.92 EUR |
1000+ | 1.78 EUR |
FDMC86320 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
auf Bestellung 5388 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 2.96 EUR |
10+ | 2.45 EUR |
100+ | 1.95 EUR |
500+ | 1.65 EUR |
1000+ | 1.4 EUR |
FDMF6820A |
![]() |
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.29 EUR |
10+ | 5.5 EUR |
100+ | 3.92 EUR |
500+ | 3.24 EUR |
1000+ | 3.02 EUR |
FDMS3660S |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
auf Bestellung 7957 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.19 EUR |
10+ | 2.27 EUR |
100+ | 1.6 EUR |
FDMS86300DC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
auf Bestellung 9569 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.65 EUR |
10+ | 3.3 EUR |
100+ | 2.41 EUR |
500+ | 2.3 EUR |
FDMS86500DC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
auf Bestellung 5318 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.04 EUR |
10+ | 4.36 EUR |
100+ | 3.14 EUR |
500+ | 2.99 EUR |
FSL146MRBN |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 35 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 35 W
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.54 EUR |
10+ | 3.18 EUR |
50+ | 3 EUR |
100+ | 2.4 EUR |
250+ | 2.1 EUR |
FSL206MRBN |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 12 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 12 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MDB10S |
![]() |
Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 65630 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.07 EUR |
27+ | 0.65 EUR |
100+ | 0.41 EUR |
500+ | 0.32 EUR |
1000+ | 0.28 EUR |
2000+ | 0.26 EUR |
MDB6S |
![]() |
Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3281 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.09 EUR |
26+ | 0.68 EUR |
100+ | 0.44 EUR |
500+ | 0.33 EUR |
1000+ | 0.29 EUR |
2000+ | 0.27 EUR |
MDB8S |
![]() |
Hersteller: onsemi
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 8087 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.16 EUR |
25+ | 0.73 EUR |
100+ | 0.47 EUR |
500+ | 0.36 EUR |
1000+ | 0.31 EUR |
2000+ | 0.29 EUR |
S320 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
auf Bestellung 42413 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.97 EUR |
26+ | 0.69 EUR |
100+ | 0.64 EUR |
500+ | 0.59 EUR |
1000+ | 0.56 EUR |
FAN3850AUC16X |
Hersteller: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Cut Tape (CT)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Cut Tape (CT)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMA905P |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
auf Bestellung 8676 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
25+ | 0.71 EUR |
100+ | 0.52 EUR |
500+ | 0.41 EUR |
1000+ | 0.39 EUR |
FDMB2307NZ |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
auf Bestellung 8875 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.43 EUR |
12+ | 1.53 EUR |
100+ | 1.02 EUR |
500+ | 0.8 EUR |
1000+ | 0.73 EUR |
FDME905PT |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
auf Bestellung 23587 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 1.97 EUR |
14+ | 1.28 EUR |
100+ | 0.87 EUR |
500+ | 0.69 EUR |
1000+ | 0.58 EUR |
2000+ | 0.57 EUR |
FAN9611MX |
![]() |
Hersteller: onsemi
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Part Status: Last Time Buy
Current - Startup: 80 µA
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Part Status: Last Time Buy
Current - Startup: 80 µA
auf Bestellung 24677 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.19 EUR |
10+ | 3.29 EUR |
25+ | 2.8 EUR |
100+ | 2.24 EUR |
250+ | 1.97 EUR |
500+ | 1.8 EUR |
1000+ | 1.66 EUR |
FDB082N15A |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 150V 117A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
Description: MOSFET N-CH 150V 117A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
auf Bestellung 1432 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 8.92 EUR |
10+ | 7.41 EUR |
100+ | 5.78 EUR |
FDMS3600S |
![]() |
auf Bestellung 4185 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.07 EUR |
10+ | 2.78 EUR |
100+ | 2 EUR |
500+ | 1.66 EUR |
1000+ | 1.54 EUR |
FDMS3604AS |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86500L |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 25A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V
Description: MOSFET N-CH 60V 25A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V
auf Bestellung 8711 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.03 EUR |
10+ | 3.37 EUR |
100+ | 2.35 EUR |
500+ | 2.03 EUR |
FDMS86520L |
![]() |
Hersteller: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
auf Bestellung 4582 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.61 EUR |
10+ | 2.98 EUR |
100+ | 2.05 EUR |
500+ | 1.66 EUR |
1000+ | 1.53 EUR |
FAN156L6X |
![]() |
Hersteller: onsemi
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
auf Bestellung 20344 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.6 EUR |
19+ | 0.95 EUR |
25+ | 0.78 EUR |
100+ | 0.61 EUR |
250+ | 0.52 EUR |
500+ | 0.47 EUR |
1000+ | 0.43 EUR |
2500+ | 0.38 EUR |
FCPF380N60 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.24 EUR |
50+ | 2.84 EUR |
FCPF400N60 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDP083N15A-F102 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 150V 83A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
Description: MOSFET N-CH 150V 83A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
auf Bestellung 2599 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.4 EUR |
50+ | 4.29 EUR |
100+ | 4.17 EUR |
500+ | 3.74 EUR |
1000+ | 3.42 EUR |
FGA40N65SMD |
![]() |
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 8.85 EUR |
30+ | 4.98 EUR |
120+ | 4.13 EUR |
FGA60N65SMD |
![]() |
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.54mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Description: IGBT FIELD STOP 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.54mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.87 EUR |
30+ | 5.64 EUR |
120+ | 4.71 EUR |
510+ | 4.02 EUR |
1020+ | 3.96 EUR |
FSL176MRTUDTU |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 90 W
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 90 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR5H100MFST1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.64 EUR |
3000+ | 0.6 EUR |
NCV8852DR2G |
![]() |
Hersteller: onsemi
Description: IC REG CTRLR BUCK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.1V ~ 40V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 93%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 1
Qualification: AEC-Q100
Description: IC REG CTRLR BUCK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.1V ~ 40V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 93%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NB3RL02FCT2G |
![]() |
Hersteller: onsemi
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-WLCSP (1.57x0.77)
Frequency - Max: 52 MHz
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-WLCSP (1.57x0.77)
Frequency - Max: 52 MHz
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.76 EUR |
NCN1188MUTAG |
![]() |
Hersteller: onsemi
Description: IC USB SWITCH 3:1 AUD/MHL 12UQFN
Packaging: Tape & Reel (TR)
Features: HDMI, USB 2.0, USB 3.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB, Video
On-State Resistance (Max): 7.5Ohm
-3db Bandwidth: 1.8GHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 3:1
Number of Channels: 2
Description: IC USB SWITCH 3:1 AUD/MHL 12UQFN
Packaging: Tape & Reel (TR)
Features: HDMI, USB 2.0, USB 3.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB, Video
On-State Resistance (Max): 7.5Ohm
-3db Bandwidth: 1.8GHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 3:1
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP702SN28T1G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 200MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 16 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 2.8V 200MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 16 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP702SN30T1G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 3V 200MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 16 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3V 200MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 16 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP702SN33T1G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 200MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 16 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 200MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 16 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.31 EUR |
MBR5H100MFST1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 11810 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.6 EUR |
15+ | 1.22 EUR |
100+ | 1.03 EUR |
500+ | 0.81 EUR |