| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NCP6343SFCCT1G | onsemi |
 Description: IC REG BUCK PROG 3A 15WLCSPCurrent - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 15-UFBGA, WLCSP Packaging: Tape & Reel (TR) Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.3V Voltage - Output (Max): 1.4V Synchronous Rectifier: Yes Supplier Device Package: 15-WLCSP (1.34x1.99) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS5652MUTWG | onsemi |
Description: IC POWER 2 CIRCUIT 12UDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCT275BFCT2G | onsemi |
Description: SENSOR DIGITAL -55C-125C 6WLCSP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NLSX5011AMUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN Number of Circuits: 1 Part Status: Active Voltage - VCCB: 0.9 V ~ 4.5 V Voltage - VCCA: 0.9 V ~ 4.5 V Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 6-UDFN (1.45x1) Data Rate: 100Mbps Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 6-UFDFN Features: Auto-Direction Sensing, Power-Off Protection Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NUP3105LT1G | onsemi |
Description: TVS DIODE 32VWM 66VC SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 32V (Max) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 35.6V Voltage - Clamping (Max) @ Ipp: 66V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCL30088DDR2G | onsemi |
Description: IC LED DRIVER OFFL 8SOIC Part Status: Active Voltage - Supply (Max): 20V Voltage - Supply (Min): 8.8V Supplier Device Package: 8-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting Operating Temperature: -40°C ~ 125°C (TA) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1252DDR2G | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Duty Cycle: 45.6% Frequency - Switching: Up to 500kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 28V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting Voltage - Start Up: 14 V Control Features: Frequency Control, Soft Start Part Status: Active |
auf Bestellung 24519 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH120T1G | onsemi |
Description: IC REG LINEAR 12V 10MA SOT89-3 Protection Features: Over Current, Over Temperature PSRR: 70dB (1kHz) Voltage - Output (Min/Fixed): 12V Supplier Device Package: SOT-89-3 Number of Regulators: 1 Voltage - Input (Max): 450V Current - Quiescent (Iq): 22 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 10mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-243AA Packaging: Cut Tape (CT) |
auf Bestellung 3743 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS20034DR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOIC Voltage - Supply Span (Max): 5.5 V Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Voltage - Supply Span (Min): 1.7 V Current - Output / Channel: 8 mA Number of Circuits: 4 Part Status: Active Supplier Device Package: 14-SOIC Voltage - Input Offset: 500 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 7 MHz Slew Rate: 8V/µs Current - Supply: 275µA (x4 Channels) Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Output Type: Rail-to-Rail |
auf Bestellung 47944 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB03N60R2DT4G | onsemi |
Description: IGBT 9A 600V DPAK Power - Max: 49 W Current - Collector Pulsed (Icm): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 9 A Part Status: Obsolete Gate Charge: 17 nC Test Condition: 300V, 3A, 30Ohm, 15V Switching Energy: 50µJ (on), 27µJ (off) Td (on/off) @ 25°C: 27ns/59ns Supplier Device Package: DPAK Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Reverse Recovery Time (trr): 65 ns Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NUP3105LT3G | onsemi |
Description: TVS DIODE 32VWM 66VC SOT233 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 32V (Max) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 35.6V Voltage - Clamping (Max) @ Ipp: 66V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10106 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD7016MUTAG | onsemi |
Description: TVS DIODE 5VWM 10VC 8UDFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.15pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 8-UDFN (3.3x1.0) Unidirectional Channels: 8 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: No Part Status: Active |
auf Bestellung 9510 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD7504MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 10UDFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.55pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 4V Power Line Protection: No Part Status: Active |
auf Bestellung 7003 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170BMX285TCG | onsemi |
Description: IC REG LINEAR 2.85V 150MA 4XDFN Protection Features: Over Current, Over Temperature Control Features: Enable Voltage - Output (Min/Fixed): 2.85V Supplier Device Package: 4-XDFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP3135MNTXG | onsemi |
Description: IC REG BUCK ADJUSTABLE 5A 16QFN Part Status: Active Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.9V Voltage - Output (Max): 4.62V Synchronous Rectifier: Yes Supplier Device Package: 16-QFN (3x3) Topology: Buck Voltage - Input (Max): 5.5V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 5A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2706 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP6343SFCCT1G | onsemi |
Description: IC REG BUCK PROG 3A 15WLCSP Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.3V Voltage - Output (Max): 1.4V Synchronous Rectifier: Yes Supplier Device Package: 15-WLCSP (1.34x1.99) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive Current - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 15-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS5652MUTWG | onsemi |
Description: IC POWER 2 CIRCUIT 12UDFN |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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NLSX5011AMUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 6-UDFN (1.45x1) Data Rate: 100Mbps Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 6-UFDFN Features: Auto-Direction Sensing, Power-Off Protection Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active Voltage - VCCB: 0.9 V ~ 4.5 V Voltage - VCCA: 0.9 V ~ 4.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NUP3105LT1G | onsemi |
Description: TVS DIODE 32VWM 66VC SOT233 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 32V (Max) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 35.6V Voltage - Clamping (Max) @ Ipp: 66V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5696 Stücke: Lieferzeit 10-14 Tag (e) |
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| AR0331SRSC00SHCA0-DRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS 48-ILCC Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2048H x 1536V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 30.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MT9P031I12STC-DR | onsemi |
Description: SENSOR IMAGE COLOR CMOS 48-LCC Frames per Second: 53.0 Supplier Device Package: 48-ILCC (10x10) Active Pixel Array: 2592H x 1944V Pixel Size: 2.2µm x 2.2µm Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V Operating Temperature: -30°C ~ 70°C Type: CMOS Package / Case: 48-LCC Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LV8111VB-AH | onsemi |
Description: IC MOTOR DRIVER 10V-35V 44SSOPK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FPF2G120BF07AS | onsemi |
Description: IGBT MODULE 650V 40A 156W F2 Current - Collector Cutoff (Max): 250 µA Power - Max: 156 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A IGBT Type: Field Stop Supplier Device Package: F2 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 3 Independent Input: Standard Mounting Type: Through Hole Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCH041N60F-F085 | onsemi |
Description: MOSFET N-CH 600V 76A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA6065ADF | onsemi |
Description: IGBT TRENCH/FS 650V 120A TO3PN Power - Max: 306 W Current - Collector Pulsed (Icm): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Part Status: Obsolete Gate Charge: 84 nC Test Condition: 400V, 60A, 6Ohm, 15V Switching Energy: 2.46mJ (on), 520µJ (off) Td (on/off) @ 25°C: 25.6ns/71ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Reverse Recovery Time (trr): 110 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCH070N60E | onsemi |
Description: MOSFET N-CH 600V 52A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V |
auf Bestellung 457 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86367-F085 | onsemi |
Description: MOSFET N-CH 80V 100A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V Power Dissipation (Max): 227W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0330N80 | onsemi |
Description: MOSFET N-CH 80V 220A 8HPSOF Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDBL86363-F085 | onsemi |
Description: MOSFET N-CH 80V 240A 8HPSOF Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86366-F085 | onsemi |
Description: MOSFET N-CH 80V 220A 8HPSOF Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 386000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86367-F085 | onsemi |
Description: MOSFET N-CH 80V 100A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V Power Dissipation (Max): 227W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8868 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0330N80 | onsemi |
Description: MOSFET N-CH 80V 220A 8HPSOF Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86363-F085 | onsemi |
Description: MOSFET N-CH 80V 240A 8HPSOF Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86366-F085 | onsemi |
Description: MOSFET N-CH 80V 220A 8HPSOF Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 387518 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH072N60F-F085 | onsemi |
Description: MOSFET N-CH 600V 52A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCH104N60F-F085 | onsemi |
Description: MOSFET N-CH 600V 37A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4302 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 411 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB86366-F085 | onsemi |
Description: MOSFET N-CH 80V 110A D2PAK Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 176W (Tj) |
Produkt ist nicht verfügbar |
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FFH50US60S-F085 | onsemi |
Description: DIODE STANDARD 600V 50A TO2472 Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 50A Technology: Standard Reverse Recovery Time (trr): 163 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Produkt ist nicht verfügbar |
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ISL9R1560P2-F085 | onsemi |
Description: DIODE AVALANCHE 600V 15A TO2202 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3713 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH60N60UFDTU-F085 | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 29ns/138ns Switching Energy: 2.47mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 192 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FGA6530WDF | onsemi |
Description: IGBT TRENCH FS 650V 60A TO-3PN Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Reverse Recovery Time (trr): 81 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 176 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 37.4 nC Test Condition: 400V, 30A, 6Ohm, 15V Switching Energy: 960µJ (on), 162µJ (off) Td (on/off) @ 25°C: 12ns/42.4ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN |
Produkt ist nicht verfügbar |
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ES1JAF | onsemi |
Description: DIODE STANDARD 600V 1A DO214AD Packaging: Tape & Reel (TR) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DAF | onsemi |
Description: DIODE STANDARD 200V 2A DO214AD Packaging: Tape & Reel (TR) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC5018SG | onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56 Part Status: Active Supplier Device Package: Power Clip 56 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSV240AF | onsemi |
Description: DIODE SCHOTTKY 40V 2A SMAF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSV340AF | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO214AD Supplier Device Package: DO-214AD (SMAF) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 485pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 12.62 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AD, SMAF Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar |
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FSV530AF | onsemi |
Description: DIODE SCHOTTKY 30V 5A SMAF |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SSA210 | onsemi |
Description: DIODE SCHOTTKY 100V 2A DO214AC Current - Reverse Leakage @ Vr: 50 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Technology: Schottky Reverse Recovery Time (trr): 8.02 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSA24 | onsemi |
Description: DIODE SCHOTTKY 40V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.84 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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SSA36 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 10.74 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 637500 Stücke: Lieferzeit 10-14 Tag (e) |
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FSV340FP | onsemi |
Description: DIODE SCHOTTKY 40V 3A SOD123HE Current - Reverse Leakage @ Vr: 160 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 12.37 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FSV360FP | onsemi |
Description: DIODE SCHOTTKY 60V 3A SOD123HE Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 10.62 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MBR1020VL | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD123F Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 600 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 12.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
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S1BFL | onsemi |
Description: DIODE STANDARD 100V 1A SOD123F Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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S1DFL | onsemi |
Description: DIODE STANDARD 200V 1A SOD123F Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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S1GFL | onsemi |
Description: DIODE STANDARD 400V 1A SOD123F Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -50°C ~ 150°C |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS13FL | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123F Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 30 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 5.875 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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SS14FL | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.695 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SS24FL | onsemi |
Description: DIODE SCHOTTKY 40V 2A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.495 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
auf Bestellung 2127851 Stücke: Lieferzeit 10-14 Tag (e) |
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SS26FL | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.26 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP6343SFCCT1G |
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Hersteller: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 15-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.3V
Voltage - Output (Max): 1.4V
Synchronous Rectifier: Yes
Supplier Device Package: 15-WLCSP (1.34x1.99)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Description: IC REG BUCK PROG 3A 15WLCSP
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 15-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.3V
Voltage - Output (Max): 1.4V
Synchronous Rectifier: Yes
Supplier Device Package: 15-WLCSP (1.34x1.99)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.65 EUR |
| NCS5652MUTWG |
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Hersteller: onsemi
Description: IC POWER 2 CIRCUIT 12UDFN
Description: IC POWER 2 CIRCUIT 12UDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCT275BFCT2G |
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Hersteller: onsemi
Description: SENSOR DIGITAL -55C-125C 6WLCSP
Description: SENSOR DIGITAL -55C-125C 6WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NLSX5011AMUTCG |
|
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-UDFN (1.45x1)
Data Rate: 100Mbps
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 6-UFDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-UDFN (1.45x1)
Data Rate: 100Mbps
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 6-UFDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NUP3105LT1G |
|
Hersteller: onsemi
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| NCL30088DDR2G |
|
Hersteller: onsemi
Description: IC LED DRIVER OFFL 8SOIC
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 8.8V
Supplier Device Package: 8-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC LED DRIVER OFFL 8SOIC
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 8.8V
Supplier Device Package: 8-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 1.78 EUR |
| 25+ | 1.5 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.02 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.84 EUR |
| NCP1252DDR2G |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 45.6%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Voltage - Start Up: 14 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 45.6%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Voltage - Start Up: 14 V
Control Features: Frequency Control, Soft Start
Part Status: Active
auf Bestellung 24519 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 19+ | 0.94 EUR |
| 25+ | 0.85 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.7 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.64 EUR |
| NCP785AH120T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 12V 10MA SOT89-3
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 450V
Current - Quiescent (Iq): 22 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 12V 10MA SOT89-3
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 450V
Current - Quiescent (Iq): 22 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 3743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 16+ | 1.1 EUR |
| 25+ | 0.99 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.76 EUR |
| NCS20034DR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 5.5 V
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 8 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 7 MHz
Slew Rate: 8V/µs
Current - Supply: 275µA (x4 Channels)
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 5.5 V
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 8 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 7 MHz
Slew Rate: 8V/µs
Current - Supply: 275µA (x4 Channels)
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
auf Bestellung 47944 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 25+ | 0.71 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| NGTB03N60R2DT4G |
Hersteller: onsemi
Description: IGBT 9A 600V DPAK
Power - Max: 49 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Part Status: Obsolete
Gate Charge: 17 nC
Test Condition: 300V, 3A, 30Ohm, 15V
Switching Energy: 50µJ (on), 27µJ (off)
Td (on/off) @ 25°C: 27ns/59ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Reverse Recovery Time (trr): 65 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: IGBT 9A 600V DPAK
Power - Max: 49 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Part Status: Obsolete
Gate Charge: 17 nC
Test Condition: 300V, 3A, 30Ohm, 15V
Switching Energy: 50µJ (on), 27µJ (off)
Td (on/off) @ 25°C: 27ns/59ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Reverse Recovery Time (trr): 65 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP3105LT3G |
|
Hersteller: onsemi
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10106 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.29 EUR |
| 5000+ | 0.26 EUR |
| ESD7016MUTAG |
|
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 10VC 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-UDFN (3.3x1.0)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Part Status: Active
auf Bestellung 9510 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| ESD7504MUTAG |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 10UDFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Power Line Protection: No
Part Status: Active
auf Bestellung 7003 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 41+ | 0.44 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
| NCP170BMX285TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.85V 150MA 4XDFN
Protection Features: Over Current, Over Temperature
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.85V 150MA 4XDFN
Protection Features: Over Current, Over Temperature
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 29+ | 0.61 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.43 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.24 EUR |
| NCP3135MNTXG |
|
Hersteller: onsemi
Description: IC REG BUCK ADJUSTABLE 5A 16QFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.9V
Voltage - Output (Max): 4.62V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (3x3)
Topology: Buck
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG BUCK ADJUSTABLE 5A 16QFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.9V
Voltage - Output (Max): 4.62V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (3x3)
Topology: Buck
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 2.32 EUR |
| 25+ | 2.19 EUR |
| 100+ | 1.86 EUR |
| 250+ | 1.75 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.27 EUR |
| NCP6343SFCCT1G |
|
Hersteller: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.3V
Voltage - Output (Max): 1.4V
Synchronous Rectifier: Yes
Supplier Device Package: 15-WLCSP (1.34x1.99)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 15-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BUCK PROG 3A 15WLCSP
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.3V
Voltage - Output (Max): 1.4V
Synchronous Rectifier: Yes
Supplier Device Package: 15-WLCSP (1.34x1.99)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 15-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 18+ | 0.99 EUR |
| 25+ | 0.9 EUR |
| 100+ | 0.79 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.68 EUR |
| NCS5652MUTWG |
|
Hersteller: onsemi
Description: IC POWER 2 CIRCUIT 12UDFN
Description: IC POWER 2 CIRCUIT 12UDFN
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.38 EUR |
| 10+ | 3.92 EUR |
| 25+ | 3.7 EUR |
| NLSX5011AMUTCG |
|
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-UDFN (1.45x1)
Data Rate: 100Mbps
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 6-UFDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-UDFN (1.45x1)
Data Rate: 100Mbps
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 6-UFDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP3105LT1G |
|
Hersteller: onsemi
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 32VWM 66VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 32V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 35.6V
Voltage - Clamping (Max) @ Ipp: 66V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5696 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| AR0331SRSC00SHCA0-DRBR |
|
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 30.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 30.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT9P031I12STC-DR |
|
Hersteller: onsemi
Description: SENSOR IMAGE COLOR CMOS 48-LCC
Frames per Second: 53.0
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Description: SENSOR IMAGE COLOR CMOS 48-LCC
Frames per Second: 53.0
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 2592H x 1944V
Pixel Size: 2.2µm x 2.2µm
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV8111VB-AH |
|
Hersteller: onsemi
Description: IC MOTOR DRIVER 10V-35V 44SSOPK
Description: IC MOTOR DRIVER 10V-35V 44SSOPK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FPF2G120BF07AS |
|
Hersteller: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Current - Collector Cutoff (Max): 250 µA
Power - Max: 156 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
IGBT Type: Field Stop
Supplier Device Package: F2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 Independent
Input: Standard
Mounting Type: Through Hole
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 650V 40A 156W F2
Current - Collector Cutoff (Max): 250 µA
Power - Max: 156 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
IGBT Type: Field Stop
Supplier Device Package: F2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 Independent
Input: Standard
Mounting Type: Through Hole
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 600V 76A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.15 EUR |
| 30+ | 15.45 EUR |
| 120+ | 13.61 EUR |
| FGA6065ADF |
|
Hersteller: onsemi
Description: IGBT TRENCH/FS 650V 120A TO3PN
Power - Max: 306 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Part Status: Obsolete
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: IGBT TRENCH/FS 650V 120A TO3PN
Power - Max: 306 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Part Status: Obsolete
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH070N60E |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.95 EUR |
| 30+ | 7.58 EUR |
| 120+ | 6.4 EUR |
| FDD86367-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.33 EUR |
| FDBL0330N80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 220A 8HPSOF
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Description: MOSFET N-CH 80V 220A 8HPSOF
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDBL86363-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 80V 240A 8HPSOF
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 3.38 EUR |
| FDBL86366-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 220A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 220A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 386000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.36 EUR |
| FDD86367-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.7 EUR |
| 10+ | 3.04 EUR |
| 100+ | 2.1 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.62 EUR |
| FDBL0330N80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 220A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 220A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.44 EUR |
| 10+ | 7.01 EUR |
| 100+ | 5.07 EUR |
| 500+ | 4.28 EUR |
| FDBL86363-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 80V 240A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.93 EUR |
| 10+ | 5.82 EUR |
| 100+ | 4.71 EUR |
| 500+ | 4.19 EUR |
| 1000+ | 3.59 EUR |
| FDBL86366-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 220A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 220A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 387518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.18 EUR |
| 10+ | 4.22 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.36 EUR |
| FCH072N60F-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH104N60F-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4302 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4302 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 411 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.19 EUR |
| 30+ | 6.46 EUR |
| 120+ | 5.78 EUR |
| FDB86366-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 110A D2PAK
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Description: MOSFET N-CH 80V 110A D2PAK
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFH50US60S-F085 |
|
Hersteller: onsemi
Description: DIODE STANDARD 600V 50A TO2472
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 163 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE STANDARD 600V 50A TO2472
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 163 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9R1560P2-F085 |
|
Hersteller: onsemi
Description: DIODE AVALANCHE 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE AVALANCHE 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.91 EUR |
| 50+ | 2.46 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.67 EUR |
| 2000+ | 1.56 EUR |
| FGH60N60UFDTU-F085 |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/138ns
Switching Energy: 2.47mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/138ns
Switching Energy: 2.47mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGA6530WDF |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 60A TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Reverse Recovery Time (trr): 81 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 176 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 37.4 nC
Test Condition: 400V, 30A, 6Ohm, 15V
Switching Energy: 960µJ (on), 162µJ (off)
Td (on/off) @ 25°C: 12ns/42.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Description: IGBT TRENCH FS 650V 60A TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Reverse Recovery Time (trr): 81 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 176 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 37.4 nC
Test Condition: 400V, 30A, 6Ohm, 15V
Switching Energy: 960µJ (on), 162µJ (off)
Td (on/off) @ 25°C: 12ns/42.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JAF |
|
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.27 EUR |
| ES2DAF |
|
Hersteller: onsemi
Description: DIODE STANDARD 200V 2A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.35 EUR |
| 20000+ | 0.34 EUR |
| FDPC5018SG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Part Status: Active
Supplier Device Package: Power Clip 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Part Status: Active
Supplier Device Package: Power Clip 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.3 EUR |
| FSV240AF |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMAF
Description: DIODE SCHOTTKY 40V 2A SMAF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSV340AF |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 3A DO214AD
Supplier Device Package: DO-214AD (SMAF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 485pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AD, SMAF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE SCHOTTKY 40V 3A DO214AD
Supplier Device Package: DO-214AD (SMAF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 485pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AD, SMAF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV530AF |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 5A SMAF
Description: DIODE SCHOTTKY 30V 5A SMAF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| SSA210 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Reverse Recovery Time (trr): 8.02 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Reverse Recovery Time (trr): 8.02 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7500+ | 0.26 EUR |
| SSA24 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.84 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.84 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7500+ | 0.22 EUR |
| SSA36 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 637500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7500+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 37500+ | 0.2 EUR |
| FSV340FP |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 3A SOD123HE
Current - Reverse Leakage @ Vr: 160 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 12.37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SOD123HE
Current - Reverse Leakage @ Vr: 160 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 12.37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV360FP |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1020VL |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123F
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 12.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 20V 1A SOD123F
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 12.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S1BFL |
|
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A SOD123F
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 100V 1A SOD123F
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| S1DFL |
|
Hersteller: onsemi
Description: DIODE STANDARD 200V 1A SOD123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE STANDARD 200V 1A SOD123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| S1GFL |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
Description: DIODE STANDARD 400V 1A SOD123F
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 15000+ | 0.099 EUR |
| 21000+ | 0.097 EUR |
| SS13FL |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123F
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 5.875 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A SOD123F
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 5.875 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS14FL |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.695 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.695 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS24FL |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 2127851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| SS26FL |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.26 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.26 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.14 EUR |