| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD86369-F085 | onsemi |
 Description: MOSFET N-CH 80V 90A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 39725 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14295 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40T65SH-F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.2ns/65.6ns Switching Energy: 1.01mJ (on), 297µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLP Packaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1613 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLP Packaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CPH3455-TL-W | onsemi |
Description: MOSFET N-CH 35V 3A 3CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FS8G | onsemi |
Description: DIODE STANDARD 400V 8A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FS8M | onsemi |
Description: DIODE STANDARD 1000V 8A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8G | onsemi |
Description: DIODE STANDARD 400V 8A TO2773 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 12184 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8J | onsemi |
Description: DIODE GEN PURP 600V 8A TO277-3 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 4907 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 3545 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8M | onsemi |
Description: DIODE STANDARD 1000V 8A TO2773 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1000 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN |
auf Bestellung 32084 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3W800LMNG | onsemi |
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 48-QFN (6x6) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:8 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C Input: Clock Frequency - Max: 133.33MHz Output: HCSL Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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NBA3N200SDG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NBA3N201SDG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Operating Temperature: -40°C ~ 125°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Part Status: Obsolete Duplex: Half Receiver Hysteresis: 25 mV Supplier Device Package: 8-SOIC Protocol: LVDS, Multipoint Data Rate: 200Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 3V ~ 3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTG35N65FL2WG | onsemi |
Description: IGBT FIELD STOP 650V 70A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD5004MXTBG | onsemi |
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN Capacitance @ Frequency: 3.5pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9.1V Voltage - Breakdown (Min): 3.9V Unidirectional Channels: 4 Supplier Device Package: 4-X3DFN (0.53x0.93) Voltage - Reverse Standoff (Typ): 3.3V (Max) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCL30030B3DR2G | onsemi |
Description: IC LED DRIVER OFFL 16SOIC Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Tape & Reel (TR) Part Status: Active Voltage - Supply (Max): 30V Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP51145MNTAG | onsemi |
Description: IC REG LDO DDR 1OUT 8DFN Part Status: Obsolete Supplier Device Package: 8-DFN (2x2) Applications: LDO (Linear), DDR Operating Temperature: -40°C ~ 85°C Voltage - Input: 1V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCS20072DR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS20072DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFN Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 88500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C670NLT3G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C404NT1G | onsemi |
Description: MOSFET N-CH 40V 49A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 126A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C670NLT3G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP170AXV120T2G | onsemi |
Description: IC REG LIN 1.2V 150MA SOT563-6 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP170AXV180T2G | onsemi |
Description: IC REG LINEAR 1.8V 150MA SOT-563 Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.48V @ 150mA PSRR: 57dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV280T2G | onsemi |
Description: IC REG LIN 2.8V 150MA SOT563-6 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.3V @ 150mA PSRR: 40dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP170AXV300T2G | onsemi |
Description: IC REG LINEAR 3V 150MA SOT-563 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.26V @ 150mA PSRR: 47dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV330T2G | onsemi |
Description: IC REG LIN 3.3V 150MA SOT563-6 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 150mA PSRR: 41dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD5004MXTBG | onsemi |
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9.1V Voltage - Breakdown (Min): 3.9V Unidirectional Channels: 4 Supplier Device Package: 4-X3DFN (0.53x0.93) Voltage - Reverse Standoff (Typ): 3.3V (Max) Capacitance @ Frequency: 3.5pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2501 Stücke: Lieferzeit 10-14 Tag (e) |
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NCL30030B3DR2G | onsemi |
Description: IC LED DRIVER OFFL 16SOIC Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Cut Tape (CT) Part Status: Active Voltage - Supply (Max): 30V |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP51145MNTAG | onsemi |
Description: IC REG LDO DDR 1OUT 8DFN Part Status: Obsolete Supplier Device Package: 8-DFN (2x2) Applications: LDO (Linear), DDR Operating Temperature: -40°C ~ 85°C Voltage - Input: 1V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCS20072DR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
auf Bestellung 9407 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS20072DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
auf Bestellung 1694 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFN Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V |
auf Bestellung 1193 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 88636 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C670NLT3G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
auf Bestellung 12743 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C404NT1G | onsemi |
Description: MOSFET N-CH 40V 49A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 845 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV120T2G | onsemi |
Description: IC REG LIN 1.2V 150MA SOT563-6 |
auf Bestellung 4406 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP170AXV180T2G | onsemi |
Description: IC REG LINEAR 1.8V 150MA SOT-563 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.48V @ 150mA PSRR: 57dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 12859 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV280T2G | onsemi |
Description: IC REG LIN 2.8V 150MA SOT563-6 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.3V @ 150mA PSRR: 40dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV300T2G | onsemi |
Description: IC REG LINEAR 3V 150MA SOT-563 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.26V @ 150mA PSRR: 47dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 6116 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV330T2G | onsemi |
Description: IC REG LIN 3.3V 150MA SOT563-6 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 150mA PSRR: 41dB (1kHz) Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SOT-563 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 900 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed |
auf Bestellung 6222 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMA5926BT3G | onsemi |
Description: DIODE ZENER 11V 1.5W SMA Power - Max: 1.5 W Supplier Device Package: SMA Impedance (Max) (Zzt): 5.5 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK4196LS-1E | onsemi |
Description: MOSFET N-CH 500V 5A TO220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Supplier Device Package: TO-220F-3FS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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3LN01C-TB-E | onsemi |
Description: MOSFET N-CH 30V 150MA 3CP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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3LP01C-TB-E | onsemi |
Description: MOSFET P-CH 30V 100MA 3CP Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: SC-59-3/CP3 Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BBL4001-1E | onsemi |
Description: MOSFET N-CH 60V 74A TO220-3 FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDD86369-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.96 EUR |
| 5000+ | 0.91 EUR |
| FDBL86563-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 3.54 EUR |
| FDD86369-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39725 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.12 EUR |
| FDBL86563-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.68 EUR |
| 10+ | 6.49 EUR |
| 100+ | 4.68 EUR |
| 500+ | 4.33 EUR |
| FGH40T65SH-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN73893MX |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.58 EUR |
| FAN8841MPX |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN73893MX |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.39 EUR |
| 10+ | 4.8 EUR |
| 25+ | 4.13 EUR |
| 100+ | 3.37 EUR |
| 250+ | 2.99 EUR |
| 500+ | 2.76 EUR |
| FAN8841MPX |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH3455-TL-W |
|
Hersteller: onsemi
Description: MOSFET N-CH 35V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V
Description: MOSFET N-CH 35V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FS8G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.77 EUR |
| 10000+ | 0.75 EUR |
| FS8K |
|
Hersteller: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS8M |
|
Hersteller: onsemi
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.69 EUR |
| 10000+ | 0.67 EUR |
| FS8G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 12184 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 11+ | 1.62 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.86 EUR |
| 2000+ | 0.85 EUR |
| FS8J |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4907 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.5 EUR |
| 12+ | 1.57 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| 2000+ | 0.69 EUR |
| FS8K |
|
Hersteller: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 800V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.69 EUR |
| 14+ | 1.27 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.62 EUR |
| FS8M |
|
Hersteller: onsemi
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
auf Bestellung 32084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.89 EUR |
| 2000+ | 0.82 EUR |
| FDMT800120DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 5.08 EUR |
| FDMT800120DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.93 EUR |
| 10+ | 8.1 EUR |
| 100+ | 6.22 EUR |
| NB3W800LMNG |
|
Hersteller: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 48-QFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:8
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 133.33MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 48-QFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:8
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 133.33MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.15 EUR |
| 10+ | 10.23 EUR |
| 25+ | 8.94 EUR |
| 80+ | 7.69 EUR |
| 230+ | 6.83 EUR |
| 490+ | 6.7 EUR |
| NBA3N200SDG |
|
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NBA3N201SDG |
|
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 25 mV
Supplier Device Package: 8-SOIC
Protocol: LVDS, Multipoint
Data Rate: 200Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 3.6V
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 25 mV
Supplier Device Package: 8-SOIC
Protocol: LVDS, Multipoint
Data Rate: 200Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTG35N65FL2WG |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 70A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT FIELD STOP 650V 70A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5004MXTBG |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Capacitance @ Frequency: 3.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9.1V
Voltage - Breakdown (Min): 3.9V
Unidirectional Channels: 4
Supplier Device Package: 4-X3DFN (0.53x0.93)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Capacitance @ Frequency: 3.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9.1V
Voltage - Breakdown (Min): 3.9V
Unidirectional Channels: 4
Supplier Device Package: 4-X3DFN (0.53x0.93)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| NCL30030B3DR2G |
|
Hersteller: onsemi
Description: IC LED DRIVER OFFL 16SOIC
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Description: IC LED DRIVER OFFL 16SOIC
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| NCP51145MNTAG |
|
Hersteller: onsemi
Description: IC REG LDO DDR 1OUT 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (2x2)
Applications: LDO (Linear), DDR
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LDO DDR 1OUT 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (2x2)
Applications: LDO (Linear), DDR
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20072DR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.41 EUR |
| 5000+ | 0.4 EUR |
| NCS20072DTBR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| NTMFS5C423NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| NTMFS5C670NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 88500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.41 EUR |
| 3000+ | 0.38 EUR |
| NTMFS5C670NLT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.44 EUR |
| 10000+ | 0.34 EUR |
| NVMFS5C404NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 49A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 49A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C423NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 126A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 126A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C670NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.13 EUR |
| NVMFS5C670NLT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP170AXV120T2G |
|
Hersteller: onsemi
Description: IC REG LIN 1.2V 150MA SOT563-6
Description: IC REG LIN 1.2V 150MA SOT563-6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| NCP170AXV180T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 150MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.48V @ 150mA
PSRR: 57dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Description: IC REG LINEAR 1.8V 150MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.48V @ 150mA
PSRR: 57dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.17 EUR |
| 8000+ | 0.16 EUR |
| NCP170AXV280T2G |
|
Hersteller: onsemi
Description: IC REG LIN 2.8V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 150mA
PSRR: 40dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: IC REG LIN 2.8V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 150mA
PSRR: 40dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP170AXV300T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA SOT-563
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.26V @ 150mA
PSRR: 47dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3V 150MA SOT-563
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.26V @ 150mA
PSRR: 47dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.15 EUR |
| NCP170AXV330T2G |
|
Hersteller: onsemi
Description: IC REG LIN 3.3V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 41dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: IC REG LIN 3.3V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 41dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.26 EUR |
| ESD5004MXTBG |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9.1V
Voltage - Breakdown (Min): 3.9V
Unidirectional Channels: 4
Supplier Device Package: 4-X3DFN (0.53x0.93)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 3.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9.1V
Voltage - Breakdown (Min): 3.9V
Unidirectional Channels: 4
Supplier Device Package: 4-X3DFN (0.53x0.93)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 3.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.2 EUR |
| NCL30030B3DR2G |
|
Hersteller: onsemi
Description: IC LED DRIVER OFFL 16SOIC
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Supply (Max): 30V
Description: IC LED DRIVER OFFL 16SOIC
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Supply (Max): 30V
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.98 EUR |
| 10+ | 3.58 EUR |
| 25+ | 3.37 EUR |
| 100+ | 2.7 EUR |
| 250+ | 2.36 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 1.82 EUR |
| NCP51145MNTAG |
|
Hersteller: onsemi
Description: IC REG LDO DDR 1OUT 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (2x2)
Applications: LDO (Linear), DDR
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LDO DDR 1OUT 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (2x2)
Applications: LDO (Linear), DDR
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20072DR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 9407 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 27+ | 0.66 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.52 EUR |
| 250+ | 0.48 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.44 EUR |
| NCS20072DTBR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 1694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 23+ | 0.78 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.61 EUR |
| 250+ | 0.57 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.52 EUR |
| NTMFS5C423NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Description: MOSFET N-CH 40V 5DFN
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| NTMFS5C670NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 88636 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 18+ | 1.03 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| NTMFS5C670NLT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 12743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.54 EUR |
| NVMFS5C404NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 49A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 49A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.1 EUR |
| 10+ | 7.13 EUR |
| 100+ | 5.38 EUR |
| 500+ | 5.09 EUR |
| NVMFS5C670NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.12 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.24 EUR |
| NCP170AXV120T2G |
|
Hersteller: onsemi
Description: IC REG LIN 1.2V 150MA SOT563-6
Description: IC REG LIN 1.2V 150MA SOT563-6
auf Bestellung 4406 Stücke:
Lieferzeit 10-14 Tag (e)
| NCP170AXV180T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 150MA SOT-563
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.48V @ 150mA
PSRR: 57dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 1.8V 150MA SOT-563
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.48V @ 150mA
PSRR: 57dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 12859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 63+ | 0.28 EUR |
| 71+ | 0.25 EUR |
| 100+ | 0.21 EUR |
| 250+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| NCP170AXV280T2G |
|
Hersteller: onsemi
Description: IC REG LIN 2.8V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 150mA
PSRR: 40dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: IC REG LIN 2.8V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 150mA
PSRR: 40dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 27+ | 0.66 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.46 EUR |
| 250+ | 0.39 EUR |
| NCP170AXV300T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA SOT-563
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.26V @ 150mA
PSRR: 47dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3V 150MA SOT-563
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.26V @ 150mA
PSRR: 47dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 6116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 71+ | 0.25 EUR |
| 80+ | 0.22 EUR |
| 100+ | 0.19 EUR |
| 250+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| NCP170AXV330T2G |
|
Hersteller: onsemi
Description: IC REG LIN 3.3V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 41dB (1kHz)
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Description: IC REG LIN 3.3V 150MA SOT563-6
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 150mA
PSRR: 41dB (1kHz)
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-563
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 900 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
auf Bestellung 6222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 27+ | 0.67 EUR |
| 28+ | 0.63 EUR |
| 100+ | 0.47 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.28 EUR |
| 1SMA5926BT3G |
|
Hersteller: onsemi
Description: DIODE ZENER 11V 1.5W SMA
Power - Max: 1.5 W
Supplier Device Package: SMA
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Description: DIODE ZENER 11V 1.5W SMA
Power - Max: 1.5 W
Supplier Device Package: SMA
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.14 EUR |
| 2SK4196LS-1E |
Hersteller: onsemi
Description: MOSFET N-CH 500V 5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
Description: MOSFET N-CH 500V 5A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3LN01C-TB-E |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA 3CP
Description: MOSFET N-CH 30V 150MA 3CP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3LP01C-TB-E |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 100MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 100MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 10.4Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BBL4001-1E |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 74A TO220-3 FP
Description: MOSFET N-CH 60V 74A TO220-3 FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH