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NCS20074DR2G NCS20074DR2G onsemi ncs20071-d.pdf Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 65 mA
Number of Circuits: 4
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 1.3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.4V/µs
Current - Supply: 420µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NCS37010MNTWG NCS37010MNTWG onsemi ncs37010-d.pdf Description: IC GFCI CTLR UL943 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 2mA
Applications: Ground Fault Protection
Voltage - Supply: 6V ~ 12V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NHP220SFT3G NHP220SFT3G onsemi nhp220sf-d.pdf Description: DIODE STANDARD 200V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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NJVMJD44H11T4G-VF01 NJVMJD44H11T4G-VF01 onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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NSIC2030JBT3G NSIC2030JBT3G onsemi nsic2030jb-d.pdf Description: IC CURRENT REGULATOR 15% SMB
Part Status: Active
Supplier Device Package: SMB
Operating Temperature: -55°C ~ 175°C
Accuracy: ±15%
Current - Output: 30mA
Voltage - Input: 120V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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NSIC2050JBT3G NSIC2050JBT3G onsemi nsic2050jb-d.pdf Description: IC CURRENT REGULATOR 15% SMB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SMB
Operating Temperature: -55°C ~ 175°C
Accuracy: ±15%
Current - Output: 50mA
Voltage - Input: 120V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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NSR01L30MXT5G NSR01L30MXT5G onsemi nsr01l30mx-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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NTD4965NT4G NTD4965NT4G onsemi NTD4965N-D.PDF Description: MOSFET N-CH 30V 13A/68A DPAK-3
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NTMS4920NR2G NTMS4920NR2G onsemi ntms4920n-d.pdf Description: MOSFET N-CH 30V 10.6A 8SOIC
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NTNS3190NZT5G NTNS3190NZT5G onsemi NTNS3190NZ.pdf Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
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NTUD3174NZT5G NTUD3174NZT5G onsemi NTUD3174NZ.PDF Description: MOSFET 2N-CH 20V 0.22A SOT963
Supplier Device Package: SOT-963
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
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ULQ2003ADR2G ULQ2003ADR2G onsemi uln2003a-d.pdf Description: TRANS 7NPN DARL 50V 0.5A 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOIC
Part Status: Active
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
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CM1293A-02SO CM1293A-02SO onsemi cm1293a-d.pdf Description: TVS DIODE 3.3VWM 9.9VC SC74
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Unidirectional Channels: 2
Supplier Device Package: SC-74
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
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12A02MH-TL-E 12A02MH-TL-E onsemi enn7483-d.pdf Description: TRANS PNP 12V 1A MCPH3
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15C01M-TL-E 15C01M-TL-E onsemi 15c01m-d.pdf Description: TRANS NPN 15V 0.7A SC70/MCP3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
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2SA1416S-TD-E 2SA1416S-TD-E onsemi 2sa1416-d.pdf Description: TRANS PNP 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SA1418S-TD-E 2SA1418S-TD-E onsemi en1788-d.pdf Description: TRANS PNP 160V 0.7A PCP
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
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2SA1419S-TD-E 2SA1419S-TD-E onsemi en2007-d.pdf Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SA2016-TD-E 2SA2016-TD-E onsemi 2SA2016-D.PDF Description: TRANS PNP 50V 7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
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2SB1122S-TD-E 2SB1122S-TD-E onsemi 2sb1122-d.pdf Description: TRANS PNP 50V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SB1123S-TD-E 2SB1123S-TD-E onsemi en1727-d.pdf Description: TRANS PNP 50V 2A PCP
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
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2SC3646T-TD-E 2SC3646T-TD-E onsemi 2sa1416-d.pdf Description: TRANS NPN 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SC3648S-TD-E 2SC3648S-TD-E onsemi en1788-d.pdf Description: TRANS NPN 160V 0.7A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SC3648T-TD-E 2SC3648T-TD-E onsemi en1788-d.pdf Description: TRANS NPN 160V 0.7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SC5226A-4-TL-E 2SC5226A-4-TL-E onsemi 2SC5226A-D.PDF Description: RF TRANS NPN 10V 7GHZ SC-70 MCP3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Produkt ist nicht verfügbar
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2SC5569-TD-E 2SC5569-TD-E onsemi 2SA2016-D.PDF Description: TRANS NPN 50V 7A SOT-89/PCP-1
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-89/PCP-1
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
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500+0.75 EUR
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2SC6096-TD-E 2SC6096-TD-E onsemi ena0434-d.pdf Description: TRANS NPN 100V 2A PCP
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
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2SD1048-7-TB-E 2SD1048-7-TB-E onsemi EN694-D.html Description: TRANS NPN 15V 0.7A 3-CP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-CP
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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2SD1620-TD-E 2SD1620-TD-E onsemi en1719-d.html Description: TRANS NPN 10V 3A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 10 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 3A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SD1624T-TD-E 2SD1624T-TD-E onsemi EN2019-D.PDF Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2V7002WT1G 2V7002WT1G onsemi 2N7002W-D.PDF Description: MOSFET N-CH 60V 310MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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3LN01SS-TL-E 3LN01SS-TL-E onsemi 3LN01SS.pdf Description: MOSFET N-CH 30V 150MA SC81
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50A02SS-TL-E 50A02SS-TL-E onsemi en7491-d.pdf Description: TRANS PNP 50V 0.4A 3SSFP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 400 mA
Supplier Device Package: 3-SSFP
Frequency - Transition: 690MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Cut Tape (CT)
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55GN01CA-TB-E 55GN01CA-TB-E onsemi 55GN01CA-D.PDF Description: RF TRANS NPN 10V 4.5GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-CP
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BAS116TT1G BAS116TT1G onsemi BAS116TT1-D.PDF Description: DIODE STD 75V 200MA SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAS21M3T5G BAS21M3T5G onsemi BAS21M3-D.PDF Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAV23CLT1G BAV23CLT1G onsemi BAV23CLT1-D.PDF Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BC807-25WT1G BC807-25WT1G onsemi BC807-25W-D.PDF Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
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BC847BPDW1T2G BC847BPDW1T2G onsemi bc846bpdw1t1-d.pdf Description: TRANS NPN/PNP 45V 0.1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
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CAT24C08HU4I-GT3 CAT24C08HU4I-GT3 onsemi CAT24C01-D.PDF Description: IC EEPROM 8KBIT I2C 400KHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
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CAT24C128HU4IGT3 CAT24C128HU4IGT3 onsemi CAT24C128-D.PDF Description: IC EEPROM 128KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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CAT24C16C4ATR CAT24C16C4ATR onsemi CAT24C01-D.PDF Description: IC EEPROM 16KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT5171TBI-50GT3 CAT5171TBI-50GT3 onsemi CAT5171-D.PDF Description: IC DIG POT 50K SOT-23-8
Packaging: Cut Tape (CT)
Resistance (Ohms): 50k
Tolerance: ±20%
Features: Selectable Address
Package / Case: SOT-23-8
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 256
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: SOT-23-8
Resistance - Wiper (Ohms) (Typ): 50
Temperature Coefficient (Typ): ±100ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CAT811LTBI-GT3 CAT811LTBI-GT3 onsemi cat811-d.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Part Status: Active
Supplier Device Package: SOT-143-4
Voltage - Threshold: 4.63V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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CPH3116-TL-E CPH3116-TL-E onsemi en6405-d.pdf Description: TRANS PNP 50V 1A 3CPH
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-CPH
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 10mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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CPH3462-TL-W CPH3462-TL-W onsemi ena2322-d.pdf Description: MOSFET N-CH 100V 1A 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DCG010-TL-E DCG010-TL-E onsemi DCG010.pdf Description: DIODE ARRAY GP 80V 100MA MCP
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: MCP
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DTC124XET1G DTC124XET1G onsemi DTC124X-D.PDF Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTC143EET1G DTC143EET1G onsemi DTC143E-D.PDF Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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ECH8310-TL-H ECH8310-TL-H onsemi ech8310-d.pdf Description: MOSFET P-CH 30V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
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ECH8660-TL-H ECH8660-TL-H onsemi ech8660-d.pdf Description: MOSFET N/P-CH 30V 4.5A 8ECH
Part Status: Active
Supplier Device Package: 8-ECH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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ECH8690-TL-H ECH8690-TL-H onsemi ech8690-d.pdf Description: MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, 790pF @ 20V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: 8-ECH
Part Status: Active
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EMI5208MUTAG EMI5208MUTAG onsemi EMI5204MU-D.PDF Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: 20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
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EMI8142MUTAG EMI8142MUTAG onsemi EMI8141-D.PDF Description: CMC 100MA 4LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 10-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.087" L x 0.053" W (2.20mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
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ESD7471N2T5G ESD7471N2T5G onsemi ESD7471_SZESD7471.pdf Description: TVS DIODE 5.3VWM 2XDFN
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Capacitance @ Frequency: 0.24pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Produkt ist nicht verfügbar
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ESD8472MUT5G ESD8472MUT5G onsemi ESD8472-D.PDF Description: TVS DIODE 5.3VWM 14VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: No
Part Status: Active
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ESDONCAN1LT1G ESDONCAN1LT1G onsemi ESDONCAN1-D.PDF Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power Line Protection: No
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LA6583MC-AH LA6583MC-AH onsemi Description: IC HALF BRIDGE DRV 800MA 10MFPSK
Load Type: Inductive
Supplier Device Package: 10-MFPSK
Voltage - Load: 2.8V ~ 14V
Technology: Bipolar
Current - Output / Channel: 800mA
Applications: DC Motors, General Purpose
Voltage - Supply: 2.8V ~ 14V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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M74VHC1GT86DFT2G M74VHC1GT86DFT2G onsemi design-resources?notFound=null Description: IC GATE XOR 1CH 2-INP SC88A
Produkt ist nicht verfügbar
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MAX803SQ293D2T1G MAX803SQ293D2T1G onsemi max803-d.pdf Description: IC SUPERVISOR 1 CHANNEL SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 20ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCS20074DR2G ncs20071-d.pdf
NCS20074DR2G
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 65 mA
Number of Circuits: 4
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 1.3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.4V/µs
Current - Supply: 420µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NCS37010MNTWG ncs37010-d.pdf
NCS37010MNTWG
Hersteller: onsemi
Description: IC GFCI CTLR UL943 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 2mA
Applications: Ground Fault Protection
Voltage - Supply: 6V ~ 12V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NHP220SFT3G nhp220sf-d.pdf
NHP220SFT3G
Hersteller: onsemi
Description: DIODE STANDARD 200V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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NJVMJD44H11T4G-VF01 mjd44h11-d.pdf
NJVMJD44H11T4G-VF01
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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NSIC2030JBT3G nsic2030jb-d.pdf
NSIC2030JBT3G
Hersteller: onsemi
Description: IC CURRENT REGULATOR 15% SMB
Part Status: Active
Supplier Device Package: SMB
Operating Temperature: -55°C ~ 175°C
Accuracy: ±15%
Current - Output: 30mA
Voltage - Input: 120V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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21+1 EUR
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NSIC2050JBT3G nsic2050jb-d.pdf
NSIC2050JBT3G
Hersteller: onsemi
Description: IC CURRENT REGULATOR 15% SMB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SMB
Operating Temperature: -55°C ~ 175°C
Accuracy: ±15%
Current - Output: 50mA
Voltage - Input: 120V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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NSR01L30MXT5G nsr01l30mx-d.pdf
NSR01L30MXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
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NTD4965NT4G NTD4965N-D.PDF
NTD4965NT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/68A DPAK-3
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NTMS4920NR2G ntms4920n-d.pdf
NTMS4920NR2G
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.6A 8SOIC
Produkt ist nicht verfügbar
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NTNS3190NZT5G NTNS3190NZ.pdf
NTNS3190NZT5G
Hersteller: onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
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NTUD3174NZT5G NTUD3174NZ.PDF
NTUD3174NZT5G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.22A SOT963
Supplier Device Package: SOT-963
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
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ULQ2003ADR2G uln2003a-d.pdf
ULQ2003ADR2G
Hersteller: onsemi
Description: TRANS 7NPN DARL 50V 0.5A 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOIC
Part Status: Active
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
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CM1293A-02SO cm1293a-d.pdf
CM1293A-02SO
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 9.9VC SC74
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Unidirectional Channels: 2
Supplier Device Package: SC-74
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Applications: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
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12A02MH-TL-E enn7483-d.pdf
12A02MH-TL-E
Hersteller: onsemi
Description: TRANS PNP 12V 1A MCPH3
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15C01M-TL-E 15c01m-d.pdf
15C01M-TL-E
Hersteller: onsemi
Description: TRANS NPN 15V 0.7A SC70/MCP3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
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2SA1416S-TD-E 2sa1416-d.pdf
2SA1416S-TD-E
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SA1418S-TD-E en1788-d.pdf
2SA1418S-TD-E
Hersteller: onsemi
Description: TRANS PNP 160V 0.7A PCP
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
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2SA1419S-TD-E en2007-d.pdf
2SA1419S-TD-E
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SA2016-TD-E 2SA2016-D.PDF
2SA2016-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
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2SB1122S-TD-E 2sb1122-d.pdf
2SB1122S-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SB1123S-TD-E en1727-d.pdf
2SB1123S-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 2A PCP
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
auf Bestellung 765 Stücke:
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15+1.46 EUR
23+0.92 EUR
100+0.6 EUR
500+0.45 EUR
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2SC3646T-TD-E 2sa1416-d.pdf
2SC3646T-TD-E
Hersteller: onsemi
Description: TRANS NPN 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 2800 Stücke:
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21+1.02 EUR
25+0.87 EUR
100+0.61 EUR
500+0.48 EUR
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2SC3648S-TD-E en1788-d.pdf
2SC3648S-TD-E
Hersteller: onsemi
Description: TRANS NPN 160V 0.7A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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20+1.09 EUR
23+0.93 EUR
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500+0.5 EUR
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2SC3648T-TD-E en1788-d.pdf
2SC3648T-TD-E
Hersteller: onsemi
Description: TRANS NPN 160V 0.7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 24359 Stücke:
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15+1.46 EUR
24+0.9 EUR
100+0.58 EUR
500+0.45 EUR
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2SC5226A-4-TL-E 2SC5226A-D.PDF
2SC5226A-4-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 7GHZ SC-70 MCP3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Produkt ist nicht verfügbar
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2SC5569-TD-E 2SA2016-D.PDF
2SC5569-TD-E
Hersteller: onsemi
Description: TRANS NPN 50V 7A SOT-89/PCP-1
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: SOT-89/PCP-1
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
auf Bestellung 5372 Stücke:
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10+2.32 EUR
15+1.45 EUR
100+0.96 EUR
500+0.75 EUR
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2SC6096-TD-E ena0434-d.pdf
2SC6096-TD-E
Hersteller: onsemi
Description: TRANS NPN 100V 2A PCP
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
auf Bestellung 1547 Stücke:
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11+1.93 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
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2SD1048-7-TB-E EN694-D.html
2SD1048-7-TB-E
Hersteller: onsemi
Description: TRANS NPN 15V 0.7A 3-CP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-CP
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2138 Stücke:
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AnzahlPrivatkunde
21+1.02 EUR
34+0.63 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
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2SD1620-TD-E en1719-d.html
2SD1620-TD-E
Hersteller: onsemi
Description: TRANS NPN 10V 3A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 10 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 3A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 2083 Stücke:
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14+1.52 EUR
23+0.95 EUR
100+0.61 EUR
500+0.46 EUR
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2SD1624T-TD-E EN2019-D.PDF
2SD1624T-TD-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 1578 Stücke:
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11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
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2V7002WT1G 2N7002W-D.PDF
2V7002WT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 310MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16739 Stücke:
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42+0.5 EUR
68+0.31 EUR
95+0.23 EUR
109+0.19 EUR
500+0.14 EUR
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3LN01SS-TL-E 3LN01SS.pdf
3LN01SS-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA SC81
Produkt ist nicht verfügbar
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50A02SS-TL-E en7491-d.pdf
50A02SS-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 0.4A 3SSFP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 400 mA
Supplier Device Package: 3-SSFP
Frequency - Transition: 690MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Cut Tape (CT)
auf Bestellung 16082 Stücke:
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27+0.8 EUR
37+0.57 EUR
100+0.29 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.14 EUR
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55GN01CA-TB-E 55GN01CA-D.PDF
55GN01CA-TB-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 4.5GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-CP
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
27+0.8 EUR
44+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
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BAS116TT1G BAS116TT1-D.PDF
BAS116TT1G
Hersteller: onsemi
Description: DIODE STD 75V 200MA SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 24130 Stücke:
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56+0.38 EUR
91+0.23 EUR
128+0.17 EUR
148+0.14 EUR
500+0.1 EUR
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BAS21M3T5G BAS21M3-D.PDF
BAS21M3T5G
Hersteller: onsemi
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 14484 Stücke:
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42+0.5 EUR
69+0.31 EUR
96+0.21 EUR
111+0.19 EUR
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BAV23CLT1G BAV23CLT1-D.PDF
BAV23CLT1G
Hersteller: onsemi
Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 2490 Stücke:
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AnzahlPrivatkunde
46+0.46 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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BC807-25WT1G BC807-25W-D.PDF
BC807-25WT1G
Hersteller: onsemi
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
auf Bestellung 12610 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
99+0.21 EUR
158+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
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BC847BPDW1T2G bc846bpdw1t1-d.pdf
BC847BPDW1T2G
Hersteller: onsemi
Description: TRANS NPN/PNP 45V 0.1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 25569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
93+0.23 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
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CAT24C08HU4I-GT3 CAT24C01-D.PDF
CAT24C08HU4I-GT3
Hersteller: onsemi
Description: IC EEPROM 8KBIT I2C 400KHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CAT24C128HU4IGT3 CAT24C128-D.PDF
CAT24C128HU4IGT3
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 36668 Stücke:
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22+0.99 EUR
23+0.93 EUR
25+0.9 EUR
50+0.88 EUR
100+0.86 EUR
250+0.83 EUR
500+0.82 EUR
1000+0.8 EUR
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CAT24C16C4ATR CAT24C01-D.PDF
CAT24C16C4ATR
Hersteller: onsemi
Description: IC EEPROM 16KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 91565 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
53+0.39 EUR
55+0.38 EUR
100+0.37 EUR
250+0.36 EUR
1000+0.35 EUR
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CAT5171TBI-50GT3 CAT5171-D.PDF
CAT5171TBI-50GT3
Hersteller: onsemi
Description: IC DIG POT 50K SOT-23-8
Packaging: Cut Tape (CT)
Resistance (Ohms): 50k
Tolerance: ±20%
Features: Selectable Address
Package / Case: SOT-23-8
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 256
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: SOT-23-8
Resistance - Wiper (Ohms) (Typ): 50
Temperature Coefficient (Typ): ±100ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CAT811LTBI-GT3 cat811-d.pdf
CAT811LTBI-GT3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Part Status: Active
Supplier Device Package: SOT-143-4
Voltage - Threshold: 4.63V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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CPH3116-TL-E en6405-d.pdf
CPH3116-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 1A 3CPH
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-CPH
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 10mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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CPH3462-TL-W ena2322-d.pdf
CPH3462-TL-W
Hersteller: onsemi
Description: MOSFET N-CH 100V 1A 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DCG010-TL-E DCG010.pdf
DCG010-TL-E
Hersteller: onsemi
Description: DIODE ARRAY GP 80V 100MA MCP
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: MCP
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DTC124XET1G DTC124X-D.PDF
DTC124XET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTC143EET1G DTC143E-D.PDF
DTC143EET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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ECH8310-TL-H ech8310-d.pdf
ECH8310-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
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ECH8660-TL-H ech8660-d.pdf
ECH8660-TL-H
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 4.5A 8ECH
Part Status: Active
Supplier Device Package: 8-ECH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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ECH8690-TL-H ech8690-d.pdf
ECH8690-TL-H
Hersteller: onsemi
Description: MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, 790pF @ 20V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: 8-ECH
Part Status: Active
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EMI5208MUTAG EMI5204MU-D.PDF
EMI5208MUTAG
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: 20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
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EMI8142MUTAG EMI8141-D.PDF
EMI8142MUTAG
Hersteller: onsemi
Description: CMC 100MA 4LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 10-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.087" L x 0.053" W (2.20mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
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ESD7471N2T5G ESD7471_SZESD7471.pdf
ESD7471N2T5G
Hersteller: onsemi
Description: TVS DIODE 5.3VWM 2XDFN
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Capacitance @ Frequency: 0.24pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
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ESD8472MUT5G ESD8472-D.PDF
ESD8472MUT5G
Hersteller: onsemi
Description: TVS DIODE 5.3VWM 14VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: No
Part Status: Active
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ESDONCAN1LT1G ESDONCAN1-D.PDF
ESDONCAN1LT1G
Hersteller: onsemi
Description: TVS DIODE 24VWM 50VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power Line Protection: No
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LA6583MC-AH
LA6583MC-AH
Hersteller: onsemi
Description: IC HALF BRIDGE DRV 800MA 10MFPSK
Load Type: Inductive
Supplier Device Package: 10-MFPSK
Voltage - Load: 2.8V ~ 14V
Technology: Bipolar
Current - Output / Channel: 800mA
Applications: DC Motors, General Purpose
Voltage - Supply: 2.8V ~ 14V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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M74VHC1GT86DFT2G design-resources?notFound=null
M74VHC1GT86DFT2G
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Produkt ist nicht verfügbar
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MAX803SQ293D2T1G max803-d.pdf
MAX803SQ293D2T1G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 20ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
DigiKey Programmable: Not Verified
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