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MBRM140T3H MBRM140T3H onsemi Description: DIODE SCHOTTKY 40V 1A POWERMITE
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRS1100T3H onsemi Description: DIODE SCHOTTKY 100V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Produkt ist nicht verfügbar
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MBRS130LT3H onsemi Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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MBRS130T3H MBRS130T3H onsemi Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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MBRS140T3H onsemi Description: DIODE SCHOTTKY 40V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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MBRS190T3H MBRS190T3H onsemi Description: DIODE SCHOTTKY 90V 2A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRS2040LT3H onsemi Description: DIODE SCHOTTKY 40V 2A SMB
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Produkt ist nicht verfügbar
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MBRS240LT3H MBRS240LT3H onsemi Description: DIODE SCHOTTKY 40V 2A SMB
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRS340T3H onsemi Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
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MBRS360T3H MBRS360T3H onsemi Description: DIODE SCHOTTKY 60V 4A SMC
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar
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MT9E013D00STCC4BAC1-200 onsemi Description: IC IMMAGE SENSOR CMOS
Frames per Second: 15
Part Status: Obsolete
Active Pixel Array: 3264H x 2448V
Pixel Size: 1.4µm x 1.4µm
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Produkt ist nicht verfügbar
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MT9E013D00STCC4BAC1-200-R4 onsemi Description: IC IMMAGE SENSOR CMOS
Frames per Second: 15
Part Status: Obsolete
Active Pixel Array: 3264H x 2448V
Pixel Size: 1.4µm x 1.4µm
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Produkt ist nicht verfügbar
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MUR1510H MUR1510H onsemi Description: DIODE GEN PURP 100V 15A TO220-2
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tray
Produkt ist nicht verfügbar
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MUR1560H onsemi Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MUR1620CTRH onsemi Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tray
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MUR460RLH onsemi Description: DIODE STANDARD 600V 4A AXIAL
Packaging: Tray
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MUR8100EH onsemi Description: DIODE STANDARD 1000V 8A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MURA120T3H MURA120T3H onsemi Description: DIODE GEN PURP 200V 2A SMA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tray
Produkt ist nicht verfügbar
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MURA160T3H MURA160T3H onsemi Description: DIODE GEN PURP 600V 2A SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tray
Produkt ist nicht verfügbar
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MURF860H onsemi Description: DIODE GP 600V 8A TO220-2FP
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tray
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar
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MURS120T3H MURS120T3H onsemi Description: DIODE STANDARD 200V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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MURS140T3H MURS140T3H onsemi Description: DIODE STANDARD 400V 2A SMB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tray
Produkt ist nicht verfügbar
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MURS160T3H onsemi Description: DIODE STANDARD 600V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MURS320T3H MURS320T3H onsemi Description: DIODE GEN PURP 200V 4A SMC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Produkt ist nicht verfügbar
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MURS360T3H MURS360T3H onsemi Description: DIODE STANDARD 600V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NTST30100CTH NTST30100CTH onsemi NTSx30100CT_G_-1G_Rev7_Jul2016.pdf Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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NJVMJD122T4G NJVMJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NJVMJD122T4G NJVMJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NJVMJD31CT4G NJVMJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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2500+0.51 EUR
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NJVMJD31CT4G NJVMJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD44H11T4G NJVMJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD44H11T4G NJVMJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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13+1.64 EUR
100+1.08 EUR
500+0.84 EUR
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NJVMJD45H11T4G NJVMJD45H11T4G onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD45H11T4G NJVMJD45H11T4G onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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NJVNJD2873T4G NJVNJD2873T4G onsemi njd2873t4-d.pdf Description: TRANS NPN 50V 2A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NJVNJD2873T4G NJVNJD2873T4G onsemi njd2873t4-d.pdf Description: TRANS NPN 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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NRVBS2040LT3G-VF01 NRVBS2040LT3G-VF01 onsemi mbrs2040lt3-d.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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NRVBS240LT3G-VF01 NRVBS240LT3G-VF01 onsemi mbrs240lt3-d.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS260T3G NRVBS260T3G onsemi mbrs260t3-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS3200T3G NRVBS3200T3G onsemi mbrs3200t3-d.pdf Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS3200T3G NRVBS3200T3G onsemi mbrs3200t3-d.pdf Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVBSS26T3G-VF01 NRVBSS26T3G-VF01 onsemi ss26-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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NVD3055-150T4G NVD3055-150T4G onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NVD3055-150T4G NVD3055-150T4G onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Produkt ist nicht verfügbar
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NVD3055L170T4G-VF01 NVD3055L170T4G-VF01 onsemi ntd3055l170-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 SBRS8140T3G-VF01 onsemi mbrs140t3-d.pdf Description: DIODE SCHOTTKY 40V 1A SMB
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SBRS8140T3G-VF01 SBRS8140T3G-VF01 onsemi mbrs140t3-d.pdf Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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NJVMJD32CT4G NJVMJD32CT4G onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD32CT4G NJVMJD32CT4G onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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N24RF16DWPT3G N24RF16DWPT3G onsemi n24rf16-d.pdf Description: RFID 16 KB EEPROM
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
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FDBL9406L-F085 FDBL9406L-F085 onsemi fdbl9406l-f085-d.pdf Description: MOSFET N-CH 40V 43A/240A 8HPSOF
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FOD3125 FOD3125 onsemi fod3125-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-PDIP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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FDMS86101E FDMS86101E onsemi Description: MOSFET N-CH 100V 12.4A/60A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHL050N65S3HF NTHL050N65S3HF onsemi nthl050n65s3hf-d.pdf Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
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NTHL190N65S3HF NTHL190N65S3HF onsemi nthl190n65s3hf-d.pdf Description: MOSFET N-CH 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
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NTPF190N65S3HF NTPF190N65S3HF onsemi ntpf190n65s3hf-d.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
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NTB095N65S3HF NTB095N65S3HF onsemi ntb095n65s3hf-d.pdf Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Produkt ist nicht verfügbar
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FGHL50T65SQ FGHL50T65SQ onsemi fghl50t65sq-d.pdf Description: IGBT 650V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 19ns/93ns
Switching Energy: 410µJ (on), 88µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
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FFSH5065A-F155 FFSH5065A-F155 onsemi ffsh5065a-f155-d.pdf Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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NTMTS001N06CTXG NTMTS001N06CTXG onsemi ntmts001n06c-d.pdf Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
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3000+2.49 EUR
Mindestbestellmenge: 3000 Stücke
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MBRM140T3H
MBRM140T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRS1100T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Produkt ist nicht verfügbar
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MBRS130LT3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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MBRS130T3H
MBRS130T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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MBRS140T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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MBRS190T3H
MBRS190T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRS2040LT3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Produkt ist nicht verfügbar
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MBRS240LT3H
MBRS240LT3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRS340T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
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MBRS360T3H
MBRS360T3H
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 4A SMC
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar
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MT9E013D00STCC4BAC1-200
Hersteller: onsemi
Description: IC IMMAGE SENSOR CMOS
Frames per Second: 15
Part Status: Obsolete
Active Pixel Array: 3264H x 2448V
Pixel Size: 1.4µm x 1.4µm
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Produkt ist nicht verfügbar
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MT9E013D00STCC4BAC1-200-R4
Hersteller: onsemi
Description: IC IMMAGE SENSOR CMOS
Frames per Second: 15
Part Status: Obsolete
Active Pixel Array: 3264H x 2448V
Pixel Size: 1.4µm x 1.4µm
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Produkt ist nicht verfügbar
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MUR1510H
MUR1510H
Hersteller: onsemi
Description: DIODE GEN PURP 100V 15A TO220-2
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tray
Produkt ist nicht verfügbar
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MUR1560H
Hersteller: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MUR1620CTRH
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tray
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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MUR460RLH
Hersteller: onsemi
Description: DIODE STANDARD 600V 4A AXIAL
Packaging: Tray
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MUR8100EH
Hersteller: onsemi
Description: DIODE STANDARD 1000V 8A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MURA120T3H
MURA120T3H
Hersteller: onsemi
Description: DIODE GEN PURP 200V 2A SMA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tray
Produkt ist nicht verfügbar
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MURA160T3H
MURA160T3H
Hersteller: onsemi
Description: DIODE GEN PURP 600V 2A SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tray
Produkt ist nicht verfügbar
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MURF860H
Hersteller: onsemi
Description: DIODE GP 600V 8A TO220-2FP
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tray
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar
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MURS120T3H
MURS120T3H
Hersteller: onsemi
Description: DIODE STANDARD 200V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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MURS140T3H
MURS140T3H
Hersteller: onsemi
Description: DIODE STANDARD 400V 2A SMB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tray
Produkt ist nicht verfügbar
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MURS160T3H
Hersteller: onsemi
Description: DIODE STANDARD 600V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MURS320T3H
MURS320T3H
Hersteller: onsemi
Description: DIODE GEN PURP 200V 4A SMC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Produkt ist nicht verfügbar
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MURS360T3H
MURS360T3H
Hersteller: onsemi
Description: DIODE STANDARD 600V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NTST30100CTH NTSx30100CT_G_-1G_Rev7_Jul2016.pdf
NTST30100CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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NJVMJD122T4G mjd122-d.pdf
NJVMJD122T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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NJVMJD122T4G mjd122-d.pdf
NJVMJD122T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NJVMJD31CT4G mjd31-d.pdf
NJVMJD31CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.51 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500 Stücke
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NJVMJD31CT4G mjd31-d.pdf
NJVMJD31CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.32 EUR
100+0.87 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
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NJVMJD44H11T4G mjd44h11-d.pdf
NJVMJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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NJVMJD44H11T4G mjd44h11-d.pdf
NJVMJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.64 EUR
100+1.08 EUR
500+0.84 EUR
Mindestbestellmenge: 9 Stücke
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NJVMJD45H11T4G mjd44h11-d.pdf
NJVMJD45H11T4G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD45H11T4G mjd44h11-d.pdf
NJVMJD45H11T4G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
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NJVNJD2873T4G njd2873t4-d.pdf
NJVNJD2873T4G
Hersteller: onsemi
Description: TRANS NPN 50V 2A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.61 EUR
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NJVNJD2873T4G njd2873t4-d.pdf
NJVNJD2873T4G
Hersteller: onsemi
Description: TRANS NPN 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 3914 Stücke:
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AnzahlPrivatkunde
9+2.34 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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NRVBS2040LT3G-VF01 mbrs2040lt3-d.pdf
NRVBS2040LT3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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NRVBS240LT3G-VF01 mbrs240lt3-d.pdf
NRVBS240LT3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS260T3G mbrs260t3-d.pdf
NRVBS260T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS3200T3G mbrs3200t3-d.pdf
NRVBS3200T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS3200T3G mbrs3200t3-d.pdf
NRVBS3200T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVBSS26T3G-VF01 ss26-d.pdf
NRVBSS26T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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NVD3055-150T4G ntd3055-150-d.pdf
NVD3055-150T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVD3055-150T4G ntd3055-150-d.pdf
NVD3055-150T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Produkt ist nicht verfügbar
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NVD3055L170T4G-VF01 ntd3055l170-d.pdf
NVD3055L170T4G-VF01
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 mbrs140t3-d.pdf
SBRS8140T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 mbrs140t3-d.pdf
SBRS8140T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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NJVMJD32CT4G mjd31-d.pdf
NJVMJD32CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.5 EUR
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NJVMJD32CT4G mjd31-d.pdf
NJVMJD32CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2940 Stücke:
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AnzahlPrivatkunde
11+1.99 EUR
17+1.25 EUR
100+0.81 EUR
500+0.62 EUR
1000+0.56 EUR
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N24RF16DWPT3G n24rf16-d.pdf
N24RF16DWPT3G
Hersteller: onsemi
Description: RFID 16 KB EEPROM
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.14 EUR
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FDBL9406L-F085 fdbl9406l-f085-d.pdf
FDBL9406L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 43A/240A 8HPSOF
Produkt ist nicht verfügbar
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FOD3125 fod3125-d.pdf
FOD3125
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-PDIP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.02 EUR
50+4.34 EUR
100+4.07 EUR
500+3.59 EUR
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FDMS86101E
FDMS86101E
Hersteller: onsemi
Description: MOSFET N-CH 100V 12.4A/60A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHL050N65S3HF nthl050n65s3hf-d.pdf
NTHL050N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
auf Bestellung 337 Stücke:
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1+30.32 EUR
30+18.73 EUR
120+16.22 EUR
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NTHL190N65S3HF nthl190n65s3hf-d.pdf
NTHL190N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
auf Bestellung 12094 Stücke:
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2+13.28 EUR
30+7.64 EUR
120+6.4 EUR
510+5.5 EUR
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NTPF190N65S3HF ntpf190n65s3hf-d.pdf
NTPF190N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
auf Bestellung 29722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.12 EUR
10+6.75 EUR
100+4.83 EUR
500+4.02 EUR
1000+3.83 EUR
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NTB095N65S3HF ntb095n65s3hf-d.pdf
NTB095N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Produkt ist nicht verfügbar
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FGHL50T65SQ fghl50t65sq-d.pdf
FGHL50T65SQ
Hersteller: onsemi
Description: IGBT 650V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 19ns/93ns
Switching Energy: 410µJ (on), 88µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.47 EUR
30+5.28 EUR
120+4.37 EUR
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FFSH5065A-F155 ffsh5065a-f155-d.pdf
FFSH5065A-F155
Hersteller: onsemi
Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 2803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.93 EUR
10+23.73 EUR
100+20.52 EUR
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NTMTS001N06CTXG ntmts001n06c-d.pdf
NTMTS001N06CTXG
Hersteller: onsemi
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.49 EUR
Mindestbestellmenge: 3000 Stücke
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