Foto | Bezeichnung | Hersteller | Beschreibung |
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NCP164AMT120TAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Power Good Part Status: Active PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 32378 Stücke: Lieferzeit 10-14 Tag (e) |
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FEBFSQ500L-H257V1-GEVB | onsemi |
Description: EVAL BOARD FOR FSQ500 Packaging: Box Voltage - Output: 5.1V Voltage - Input: 90 ~ 264 VAC Current - Output: 400mA Frequency - Switching: 130kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: FSQ500L Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 2.04 W |
Produkt ist nicht verfügbar |
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DSH015-TL-E | onsemi |
Description: SWITCH DIODE 0.15A 50V Packaging: Bulk |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSBF10CH60B | onsemi |
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Produkt ist nicht verfügbar |
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NRVTS5100ETFSWFTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NRVTS5100ETFSWFTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 585 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SURS5664T3 | onsemi | Description: REC SMB SPECIAL ULTFST |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SURS5666T3G | onsemi | Description: REC SMB SPECIAL ULTFST |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SURS5667T3 | onsemi | Description: REC SMC SPECIAL ULTFST |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FAM65HR51DS2 | onsemi |
![]() Packaging: Tube Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -55°C ~ 150°C (TJ) NTC Thermistor: No Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 135 W Input Capacitance (Cies) @ Vce: 4.86 nF @ 400 V |
Produkt ist nicht verfügbar |
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SC74HC14ADTR2G | onsemi |
Description: IC Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NVMFS5C420NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C420NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 7410 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C420NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 200µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFS5C420NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 200µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C426NWFAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFS5C426NWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C426NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFS5C426NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1305 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C420NWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C420NWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 34430 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C423NLWFAFT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NTMFS4H013NFT1G | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 269A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3923 pF @ 12 V |
auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4H01NT1G | onsemi |
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Produkt ist nicht verfügbar |
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NTMFS4H01NT1G | onsemi |
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Produkt ist nicht verfügbar |
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NTMFS4H01NT1G | onsemi |
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Produkt ist nicht verfügbar |
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NTMFS0D8N02P1ET1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS0D8N02P1ET1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V |
auf Bestellung 366 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D6N03CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 433A (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 30A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D6N03CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 433A (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 30A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V |
auf Bestellung 8599 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D8N03CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 15 V |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS0D8N03CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 15 V |
auf Bestellung 11935 Stücke: Lieferzeit 10-14 Tag (e) |
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LV5636VH-MPB-H | onsemi |
![]() Packaging: Tube Package / Case: 14-LSSOP (0.173", 4.40mm Width) + 2 Heat Tabs Voltage - Output: Multiple Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 8V ~ 23V Operating Temperature: -30°C ~ 85°C Applications: Converter, BS/CS Antenna Supplier Device Package: 14-HSSOP |
auf Bestellung 1160 Stücke: Lieferzeit 10-14 Tag (e) |
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SB12079DR2G | onsemi |
Description: HIGH FREQ PRESCALER Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB7N017MMN | onsemi |
![]() Packaging: Tube Package / Case: 52-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML Frequency - Max: 3.5GHz Type: Clock Divider Input: CML, ECL, LVCMOS, LVDS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 52-QFN (8x8) PLL: No Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 |
auf Bestellung 1315 Stücke: Lieferzeit 10-14 Tag (e) |
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NB7N017MMNR2G | onsemi |
![]() Packaging: Bulk Package / Case: 52-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML Frequency - Max: 3.5GHz Type: Clock Divider Input: CML, ECL, LVCMOS, LVDS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 52-QFN (8x8) PLL: No Divider/Multiplier: Yes/No Part Status: Discontinued at Digi-Key Number of Circuits: 1 |
auf Bestellung 10143 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896-G | onsemi |
Description: MOSFET N-CH 30V TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV8164AML250TCG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-DFNW (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable, Power Good Grade: Automotive PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.22V @ 300mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV8164AML250TCG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-DFNW (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable, Power Good Grade: Automotive PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.22V @ 300mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS21872DMR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 28µA Slew Rate: 0.1V/µs Gain Bandwidth Product: 270 kHz Current - Input Bias: 60 pA Voltage - Input Offset: 6 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS21872DMR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 28µA Slew Rate: 0.1V/µs Gain Bandwidth Product: 270 kHz Current - Input Bias: 60 pA Voltage - Input Offset: 6 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
auf Bestellung 27011 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV21872DMR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 28µA Slew Rate: 0.1V/µs Current - Input Bias: 60 pA Voltage - Input Offset: 6 µV Supplier Device Package: 8-MSOP Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV21872DMR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 28µA Slew Rate: 0.1V/µs Current - Input Bias: 60 pA Voltage - Input Offset: 6 µV Supplier Device Package: 8-MSOP Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 11 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
auf Bestellung 2961 Stücke: Lieferzeit 10-14 Tag (e) |
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NIS4461MT1TXG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 24V Accuracy: ±10% Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFN (3x3) Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NIS4461MT1TXG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 24V Accuracy: ±10% Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFN (3x3) Part Status: Active |
auf Bestellung 12663 Stücke: Lieferzeit 10-14 Tag (e) |
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MC78L05ACDR2GH | onsemi |
Description: IC REG LINEAR 5V 100MA 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Grade: Automotive Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMTS0D7N06CLTXG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D7N06CLTXG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4487 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS0D7N06C | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 314W (Tc) Vgs(th) (Max) @ Id: 4V @ 661µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTBLS0D7N06C | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 314W (Tc) Vgs(th) (Max) @ Id: 4V @ 661µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V |
auf Bestellung 838 Stücke: Lieferzeit 10-14 Tag (e) |
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NLVHC4051ADWR2G | onsemi |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 2354 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5V6T3G | onsemi |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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20142-018-XTD | onsemi |
Description: GENERAL SALES (ULP) Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 25559 Stücke: Lieferzeit 10-14 Tag (e) |
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3LN01S-K-TL-E | onsemi | Description: MOSFET N-CH 30V 0.15A SMCP |
auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3N200SDG | onsemi |
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auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NB3N501DR2G | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 160MHz Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.25V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 8639 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3N508SDTR2G | onsemi |
Description: IC CLOCK GENERATOR 16TSSOP Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: M-LVDS Frequency - Max: 216MHz Type: Clock Generator Input: Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 16-TSSOP PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 19124 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP4D5N10C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 310µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5065 pF @ 50 V |
auf Bestellung 563 Stücke: Lieferzeit 10-14 Tag (e) |
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ASP0800JCPZ-RL | onsemi |
Description: 8 PHASE VR11.1 CONTROLLER Packaging: Bulk Part Status: Active |
auf Bestellung 20350 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP0865B | onsemi |
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auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
NCP164AMT120TAG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.2V 300MA 6-WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.2V 300MA 6-WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 32378 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.62 EUR |
11+ | 1.61 EUR |
25+ | 1.35 EUR |
100+ | 1.05 EUR |
250+ | 0.91 EUR |
500+ | 0.82 EUR |
1000+ | 0.74 EUR |
FEBFSQ500L-H257V1-GEVB |
Hersteller: onsemi
Description: EVAL BOARD FOR FSQ500
Packaging: Box
Voltage - Output: 5.1V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 400mA
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: FSQ500L
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 2.04 W
Description: EVAL BOARD FOR FSQ500
Packaging: Box
Voltage - Output: 5.1V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 400mA
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: FSQ500L
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 2.04 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSH015-TL-E |
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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5323+ | 0.10 EUR |
FSBF10CH60B |
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Hersteller: onsemi
Description: AC MOTOR CONTROLLER, 20A
Description: AC MOTOR CONTROLLER, 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTS5100ETFSWFTAG |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTS5100ETFSWFTAG |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 585 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SURS5664T3 |
Hersteller: onsemi
Description: REC SMB SPECIAL ULTFST
Description: REC SMB SPECIAL ULTFST
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SURS5666T3G |
Hersteller: onsemi
Description: REC SMB SPECIAL ULTFST
Description: REC SMB SPECIAL ULTFST
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SURS5667T3 |
Hersteller: onsemi
Description: REC SMC SPECIAL ULTFST
Description: REC SMC SPECIAL ULTFST
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FAM65HR51DS2 |
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Hersteller: onsemi
Description: IGBT MODULE 650V 33A 135W
Packaging: Tube
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -55°C ~ 150°C (TJ)
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 135 W
Input Capacitance (Cies) @ Vce: 4.86 nF @ 400 V
Description: IGBT MODULE 650V 33A 135W
Packaging: Tube
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -55°C ~ 150°C (TJ)
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 135 W
Input Capacitance (Cies) @ Vce: 4.86 nF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS5C420NLT1G |
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Hersteller: onsemi
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 2.63 EUR |
3000+ | 2.48 EUR |
NVMFS5C420NLT1G |
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Hersteller: onsemi
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 7410 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.09 EUR |
10+ | 4.27 EUR |
100+ | 3.45 EUR |
500+ | 3.07 EUR |
NVMFS5C420NLWFT1G |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS5C420NLWFT1G |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
Description: POWER MOSFET, SINGLE, N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 277A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.27 EUR |
10+ | 4.80 EUR |
100+ | 3.40 EUR |
500+ | 2.80 EUR |
NVMFS5C426NWFAFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS5C426NWFAFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.41 EUR |
10+ | 4.21 EUR |
100+ | 2.95 EUR |
500+ | 2.42 EUR |
NVMFS5C426NLWFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS5C426NLWFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1305 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.46 EUR |
10+ | 4.23 EUR |
100+ | 2.97 EUR |
500+ | 2.44 EUR |
NVMFS5C420NWFT1G |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 2.64 EUR |
NVMFS5C420NWFT1G |
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Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 34430 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.27 EUR |
10+ | 4.80 EUR |
100+ | 3.40 EUR |
500+ | 2.80 EUR |
NVMFS5C423NLWFAFT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4H013NFT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 43A/269A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 269A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3923 pF @ 12 V
Description: MOSFET N-CH 25V 43A/269A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 269A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3923 pF @ 12 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
204+ | 2.29 EUR |
NTMFS4H01NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4H01NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4H01NT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS0D8N02P1ET1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 25V 55A/365A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V
Description: MOSFET N-CH 25V 55A/365A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS0D8N02P1ET1G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 55A/365A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V
Description: MOSFET N-CH 25V 55A/365A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 365A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 46A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 13 V
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.88 EUR |
10+ | 4.23 EUR |
100+ | 3.37 EUR |
NTMFS0D6N03CT1G |
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Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 30A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 30A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 1.87 EUR |
NTMFS0D6N03CT1G |
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Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 30A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 30A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
auf Bestellung 8599 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.65 EUR |
10+ | 3.01 EUR |
100+ | 2.07 EUR |
500+ | 1.81 EUR |
NTMFS0D8N03CT1G |
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Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 15 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 15 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 1.51 EUR |
3000+ | 1.31 EUR |
NTMFS0D8N03CT1G |
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Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 15 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 15 V
auf Bestellung 11935 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.31 EUR |
10+ | 2.23 EUR |
100+ | 1.78 EUR |
500+ | 1.72 EUR |
LV5636VH-MPB-H |
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Hersteller: onsemi
Description: IC REG CONV BS/CS 2OUT 14HSSOP
Packaging: Tube
Package / Case: 14-LSSOP (0.173", 4.40mm Width) + 2 Heat Tabs
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 8V ~ 23V
Operating Temperature: -30°C ~ 85°C
Applications: Converter, BS/CS Antenna
Supplier Device Package: 14-HSSOP
Description: IC REG CONV BS/CS 2OUT 14HSSOP
Packaging: Tube
Package / Case: 14-LSSOP (0.173", 4.40mm Width) + 2 Heat Tabs
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 8V ~ 23V
Operating Temperature: -30°C ~ 85°C
Applications: Converter, BS/CS Antenna
Supplier Device Package: 14-HSSOP
auf Bestellung 1160 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
256+ | 1.90 EUR |
SB12079DR2G |
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 6.92 EUR |
NB7N017MMN |
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Hersteller: onsemi
Description: IC DIVIDER 8BIT DUAL CML 52-QFN
Packaging: Tube
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 3.5GHz
Type: Clock Divider
Input: CML, ECL, LVCMOS, LVDS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 52-QFN (8x8)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
Description: IC DIVIDER 8BIT DUAL CML 52-QFN
Packaging: Tube
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 3.5GHz
Type: Clock Divider
Input: CML, ECL, LVCMOS, LVDS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 52-QFN (8x8)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 32.24 EUR |
NB7N017MMNR2G |
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Hersteller: onsemi
Description: IC DIVIDER 8BIT DUAL CML 52-QFN
Packaging: Bulk
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 3.5GHz
Type: Clock Divider
Input: CML, ECL, LVCMOS, LVDS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 52-QFN (8x8)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
Description: IC DIVIDER 8BIT DUAL CML 52-QFN
Packaging: Bulk
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 3.5GHz
Type: Clock Divider
Input: CML, ECL, LVCMOS, LVDS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 52-QFN (8x8)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Discontinued at Digi-Key
Number of Circuits: 1
auf Bestellung 10143 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 64.54 EUR |
FDD8896-G |
Hersteller: onsemi
Description: MOSFET N-CH 30V TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8164AML250TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 300MA 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8164AML250TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 300MA 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFNW (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.20 EUR |
17+ | 1.05 EUR |
25+ | 0.98 EUR |
100+ | 0.74 EUR |
250+ | 0.63 EUR |
500+ | 0.60 EUR |
1000+ | 0.46 EUR |
NCS21872DMR2G |
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Hersteller: onsemi
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 270 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 270 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.70 EUR |
NCS21872DMR2G |
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Hersteller: onsemi
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 270 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 270 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
auf Bestellung 27011 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 2.97 EUR |
10+ | 1.84 EUR |
25+ | 1.55 EUR |
100+ | 1.21 EUR |
250+ | 1.05 EUR |
500+ | 0.95 EUR |
1000+ | 0.86 EUR |
NCV21872DMR2G |
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Hersteller: onsemi
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV21872DMR2G |
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Hersteller: onsemi
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 2CIRC 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 28µA
Slew Rate: 0.1V/µs
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.25 EUR |
13+ | 1.38 EUR |
25+ | 1.15 EUR |
100+ | 0.89 EUR |
250+ | 0.77 EUR |
500+ | 0.69 EUR |
1000+ | 0.62 EUR |
NIS4461MT1TXG |
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Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 24V
Accuracy: ±10%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 24V
Accuracy: ±10%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.81 EUR |
NIS4461MT1TXG |
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Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 24V
Accuracy: ±10%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 24V
Accuracy: ±10%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 12663 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.90 EUR |
10+ | 2.39 EUR |
100+ | 1.99 EUR |
500+ | 1.82 EUR |
MC78L05ACDR2GH |
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMTS0D7N06CLTXG |
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Hersteller: onsemi
Description: AFSM T6 60V LL NCH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Qualification: AEC-Q101
Description: AFSM T6 60V LL NCH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 11.92 EUR |
NVMTS0D7N06CLTXG |
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Hersteller: onsemi
Description: AFSM T6 60V LL NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Qualification: AEC-Q101
Description: AFSM T6 60V LL NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4487 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.46 EUR |
10+ | 12.18 EUR |
100+ | 11.74 EUR |
NTBLS0D7N06C |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTBLS0D7N06C |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
auf Bestellung 838 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.45 EUR |
10+ | 10.63 EUR |
100+ | 7.90 EUR |
500+ | 7.29 EUR |
NLVHC4051ADWR2G |
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auf Bestellung 2354 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
761+ | 0.63 EUR |
MMSZ5V6T3G |
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Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.04 EUR |
20000+ | 0.04 EUR |
20142-018-XTD |
Hersteller: onsemi
Description: GENERAL SALES (ULP)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: GENERAL SALES (ULP)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 25559 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
258+ | 1.91 EUR |
3LN01S-K-TL-E |
Hersteller: onsemi
Description: MOSFET N-CH 30V 0.15A SMCP
Description: MOSFET N-CH 30V 0.15A SMCP
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3206+ | 0.17 EUR |
NB3N200SDG |
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Hersteller: onsemi
Description: LINE TRANSCEIVER, 1 DRIVER, 1 RC
Description: LINE TRANSCEIVER, 1 DRIVER, 1 RC
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
NB3N501DR2G |
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Hersteller: onsemi
Description: IC LL CLOCK MULTIPLIER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 160MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC LL CLOCK MULTIPLIER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 160MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 8639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
116+ | 4.25 EUR |
NB3N508SDTR2G |
Hersteller: onsemi
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: M-LVDS
Frequency - Max: 216MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: M-LVDS
Frequency - Max: 216MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 19124 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
247+ | 2.04 EUR |
FDP4D5N10C |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 128A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 310µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5065 pF @ 50 V
Description: MOSFET N-CH 100V 128A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 310µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5065 pF @ 50 V
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.13 EUR |
50+ | 5.21 EUR |
100+ | 4.81 EUR |
500+ | 4.47 EUR |
ASP0800JCPZ-RL |
auf Bestellung 20350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
340+ | 1.45 EUR |
FFSP0865B |
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Hersteller: onsemi
Description: SIC DIODE TO220 650V
Description: SIC DIODE TO220 650V
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH