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FQA13N50CF FQA13N50CF onsemi fqa13n50cf-d.pdf Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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MMBF4416 MMBF4416 onsemi MMBF4416.pdf Description: RF MOSFET JFET 15V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Gain: 18dB
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - Rated: 30 V
Voltage - Test: 15 V
Current - Test: 5 mA
auf Bestellung 3000 Stücke:
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NTST40H120CTG NTST40H120CTG onsemi ONSM-S-A0002809496-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 120V 20A TO2203
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Current - Reverse Leakage @ Vr: 65 µA @ 120 V
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UC3843BVDR2G UC3843BVDR2G onsemi uc3842b-d.pdf Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
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7500+0.43 EUR
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UC3843BVDR2G UC3843BVDR2G onsemi uc3842b-d.pdf Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
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SZMMBZ5257BLT1G SZMMBZ5257BLT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CPH3148-TL-E onsemi Description: TRANS PNP 100V 2A 3CPH
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 260MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
auf Bestellung 3000 Stücke:
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MTD3055VL MTD3055VL onsemi MTD3055VL_Rev6_Aug06.pdf Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
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MTD3055VL MTD3055VL onsemi MTD3055VL_Rev6_Aug06.pdf Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
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NB7NPQ1004MMTTWG NB7NPQ1004MMTTWG onsemi nb7npq1004m-d.pdf Description: IC REDRIVER 2-PORT LIN 42WQFN
Produkt ist nicht verfügbar
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NB7NPQ1004MMTTWG NB7NPQ1004MMTTWG onsemi nb7npq1004m-d.pdf Description: IC REDRIVER 2-PORT LIN 42WQFN
auf Bestellung 4990 Stücke:
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100+4.57 EUR
250+4.34 EUR
500+3.89 EUR
1000+3.28 EUR
2500+3.12 EUR
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NCP1618FDR2G NCP1618FDR2G onsemi ncp1618-d.pdf Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
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NCP1618FDR2G NCP1618FDR2G onsemi ncp1618-d.pdf Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
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10+1.9 EUR
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250+1.13 EUR
500+1.04 EUR
1000+0.96 EUR
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NSS1C200MZ4T3G NSS1C200MZ4T3G onsemi NSS1C200MZ4-D.PDF Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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CPH5520-TL-E CPH5520-TL-E onsemi ena0485-d.pdf Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
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CPH5520-TL-E CPH5520-TL-E onsemi ena0485-d.pdf Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
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100+0.73 EUR
500+0.56 EUR
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FCPF4300N80Z FCPF4300N80Z onsemi fcpf4300n80z-d.pdf Description: MOSFET N-CH 800V 1.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
auf Bestellung 983 Stücke:
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500+1.89 EUR
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NSR0340V2T5G NSR0340V2T5G onsemi nsr0340v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 8000 Stücke:
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8000+0.08 EUR
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NSR0340V2T5G NSR0340V2T5G onsemi nsr0340v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 18108 Stücke:
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64+0.28 EUR
105+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.12 EUR
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ISL9R1560G2-F085 ISL9R1560G2-F085 onsemi Description: DIODE GEN PURP 600V 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NLV14538BDWR2G NLV14538BDWR2G onsemi mc14538b-d.pdf Description: IC MMV 2-CIR 95-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Grade: Automotive
Voltage - Supply: 3 V ~ 18 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NTTFS015P03P8ZTAG NTTFS015P03P8ZTAG onsemi nttfs015p03p8z-d.pdf Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Produkt ist nicht verfügbar
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NTTFS015P03P8ZTAG NTTFS015P03P8ZTAG onsemi nttfs015p03p8z-d.pdf Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
auf Bestellung 855 Stücke:
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10+1.9 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
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NVTFWS015P03P8ZTAG NVTFWS015P03P8ZTAG onsemi nvtfs015p03p8z-d.pdf Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFS015P03P8ZTAG NVTFS015P03P8ZTAG onsemi nvtfs015p03p8z-d.pdf Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TIP111TU TIP111TU onsemi tip112-d.pdf Description: TRANS NPN DARL 80V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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MMBF4392 MMBF4392 onsemi MMBF4391-93.pdf Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
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MMBF4392 MMBF4392 onsemi MMBF4391-93.pdf Description: JFET N-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
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SZ1SMB5941BT3 SZ1SMB5941BT3 onsemi Description: DIODE ZENER 47V 3W SMB
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1SMB5941BT3 1SMB5941BT3 onsemi 1smb5913bt3-d.pdf Description: DIODE ZENER 47V 3W SMB
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NCV8160AMX250TBG NCV8160AMX250TBG onsemi ncv8160-d.pdf Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
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NCV8160AMX250TBG NCV8160AMX250TBG onsemi ncv8160-d.pdf Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
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NCP114AMX250TBG NCP114AMX250TBG onsemi ncp114-d.pdf Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP114AMX250TBG NCP114AMX250TBG onsemi ncp114-d.pdf Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCV20092DMR2G NCV20092DMR2G onsemi ncs2009-d.pdf Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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NCV20092DMR2G NCV20092DMR2G onsemi ncs2009-d.pdf Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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NCV68261MTWAITBG NCV68261MTWAITBG onsemi ncv68261-d.pdf Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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NCV68261MTWAITBG NCV68261MTWAITBG onsemi ncv68261-d.pdf Description: IDEAL DIODE AND HS SWITCH NMOS D
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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FDMS86181 FDMS86181 onsemi fdms86181-d.pdf Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
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FDMS86181 FDMS86181 onsemi fdms86181-d.pdf Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
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NTMFD1D1N02X NTMFD1D1N02X onsemi ntmfd1d1n02x-d.pdf Description: MOSFET 2N-CH 25V 14A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
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NCP5010FCT1G onsemi NCP5010-D.pdf Description: IC LED DRV RGLT ANALOG 8FLIPCHIP
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LM4041BSD-122GT3 LM4041BSD-122GT3 onsemi ONSMS35192-1.pdf?t.download=true&u=5oefqw Description: VOLTAGE REFERENCES, PRECISION MI
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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2N7002V 2N7002V onsemi 2N7002VA-D.pdf Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
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2N7002V 2N7002V onsemi 2N7002VA-D.pdf Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
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CAT863MTBI-GT3 CAT863MTBI-GT3 onsemi cat853-d.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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CAT863TTBI-GT3 CAT863TTBI-GT3 onsemi cat853-d.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23-3
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KSC5305DTU KSC5305DTU onsemi KSC5305D.pdf Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
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MTD3055V MTD3055V onsemi mtd3055v-d.pdf Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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2N3820 2N3820 onsemi 2N3820.pdf Description: JFET P-CH 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
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NP3100GBRLG NP3100GBRLG onsemi DO-15_NP_Series.pdf Description: THYRISTOR 275V 80A DO204AC
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NSVS50031SB3T1G NSVS50031SB3T1G onsemi nsvs50030sb3-d.pdf Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Grade: Automotive
Qualification: AEC-Q101
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NSVS50031SB3T1G NSVS50031SB3T1G onsemi nsvs50030sb3-d.pdf Description: TRANS NPN 50V 3A 3-CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Grade: Automotive
Qualification: AEC-Q101
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CPH6121-TL-E CPH6121-TL-E onsemi Description: TRANS PNP 12V 3A 6CPH
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.3 W
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FDLL400 FDLL400 onsemi FAIRS44756-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
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FDLL400 FDLL400 onsemi FAIRS44756-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 7484 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
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MMUN2113LT3 MMUN2113LT3 onsemi MMUN21xxLT1%2C3_Series.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MMUN2113LT1 MMUN2113LT1 onsemi MMUN21xxLT1%2C3_Series.pdf Description: TRANS BRT PNP 100MA 50V SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NC7S02M5X-L22090 NC7S02M5X-L22090 onsemi nc7s02-d.pdf Description: IC GATE NOR 1CH 2-INP SOT23-5
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
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MUN2112T3 MUN2112T3 onsemi ONSMS04075-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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FQA13N50CF fqa13n50cf-d.pdf
FQA13N50CF
Hersteller: onsemi
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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MMBF4416 MMBF4416.pdf
MMBF4416
Hersteller: onsemi
Description: RF MOSFET JFET 15V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Gain: 18dB
Technology: JFET
Noise Figure: 2dB
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - Rated: 30 V
Voltage - Test: 15 V
Current - Test: 5 mA
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.16 EUR
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NTST40H120CTG ONSM-S-A0002809496-1.pdf?t.download=true&u=5oefqw
NTST40H120CTG
Hersteller: onsemi
Description: DIODE ARR SCHOT 120V 20A TO2203
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Current - Reverse Leakage @ Vr: 65 µA @ 120 V
auf Bestellung 39020 Stücke:
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Anzahl Preis
310+1.63 EUR
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UC3843BVDR2G uc3842b-d.pdf
UC3843BVDR2G
Hersteller: onsemi
Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
auf Bestellung 7500 Stücke:
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Anzahl Preis
2500+0.45 EUR
5000+0.44 EUR
7500+0.43 EUR
Mindestbestellmenge: 2500
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UC3843BVDR2G uc3842b-d.pdf
UC3843BVDR2G
Hersteller: onsemi
Description: IC REG CTRLR FLYBACK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
auf Bestellung 7612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.19 EUR
25+0.99 EUR
100+0.77 EUR
250+0.66 EUR
500+0.59 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
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SZMMBZ5257BLT1G mmbz5221elt1-d.pdf
SZMMBZ5257BLT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CPH3148-TL-E
Hersteller: onsemi
Description: TRANS PNP 100V 2A 3CPH
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 260MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
740+0.72 EUR
Mindestbestellmenge: 740
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MTD3055VL MTD3055VL_Rev6_Aug06.pdf
MTD3055VL
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
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MTD3055VL MTD3055VL_Rev6_Aug06.pdf
MTD3055VL
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
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NB7NPQ1004MMTTWG nb7npq1004m-d.pdf
NB7NPQ1004MMTTWG
Hersteller: onsemi
Description: IC REDRIVER 2-PORT LIN 42WQFN
Produkt ist nicht verfügbar
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NB7NPQ1004MMTTWG nb7npq1004m-d.pdf
NB7NPQ1004MMTTWG
Hersteller: onsemi
Description: IC REDRIVER 2-PORT LIN 42WQFN
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+5.58 EUR
25+5.28 EUR
100+4.57 EUR
250+4.34 EUR
500+3.89 EUR
1000+3.28 EUR
2500+3.12 EUR
Mindestbestellmenge: 3
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NCP1618FDR2G ncp1618-d.pdf
NCP1618FDR2G
Hersteller: onsemi
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
auf Bestellung 12500 Stücke:
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Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
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NCP1618FDR2G ncp1618-d.pdf
NCP1618FDR2G
Hersteller: onsemi
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
auf Bestellung 14835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.9 EUR
25+1.61 EUR
100+1.28 EUR
250+1.13 EUR
500+1.04 EUR
1000+0.96 EUR
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NSS1C200MZ4T3G NSS1C200MZ4-D.PDF
NSS1C200MZ4T3G
Hersteller: onsemi
Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
auf Bestellung 101694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1596+0.33 EUR
Mindestbestellmenge: 1596
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CPH5520-TL-E ena0485-d.pdf
CPH5520-TL-E
Hersteller: onsemi
Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.44 EUR
Mindestbestellmenge: 3000
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CPH5520-TL-E ena0485-d.pdf
CPH5520-TL-E
Hersteller: onsemi
Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
auf Bestellung 3710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.12 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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FCPF4300N80Z fcpf4300n80z-d.pdf
FCPF4300N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.36 EUR
100+2.33 EUR
500+1.89 EUR
Mindestbestellmenge: 4
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NSR0340V2T5G nsr0340v2t1-d.pdf
NSR0340V2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.08 EUR
Mindestbestellmenge: 8000
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NSR0340V2T5G nsr0340v2t1-d.pdf
NSR0340V2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 18108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
64+0.28 EUR
105+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.12 EUR
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ISL9R1560G2-F085
ISL9R1560G2-F085
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NLV14538BDWR2G mc14538b-d.pdf
NLV14538BDWR2G
Hersteller: onsemi
Description: IC MMV 2-CIR 95-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Grade: Automotive
Voltage - Supply: 3 V ~ 18 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NTTFS015P03P8ZTAG nttfs015p03p8z-d.pdf
NTTFS015P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Produkt ist nicht verfügbar
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NTTFS015P03P8ZTAG nttfs015p03p8z-d.pdf
NTTFS015P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
Mindestbestellmenge: 10
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NVTFWS015P03P8ZTAG nvtfs015p03p8z-d.pdf
NVTFWS015P03P8ZTAG
Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFS015P03P8ZTAG nvtfs015p03p8z-d.pdf
NVTFS015P03P8ZTAG
Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TIP111TU tip112-d.pdf
TIP111TU
Hersteller: onsemi
Description: TRANS NPN DARL 80V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MMBF4392 MMBF4391-93.pdf
MMBF4392
Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
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MMBF4392 MMBF4391-93.pdf
MMBF4392
Hersteller: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
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SZ1SMB5941BT3
SZ1SMB5941BT3
Hersteller: onsemi
Description: DIODE ZENER 47V 3W SMB
Produkt ist nicht verfügbar
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1SMB5941BT3 1smb5913bt3-d.pdf
1SMB5941BT3
Hersteller: onsemi
Description: DIODE ZENER 47V 3W SMB
auf Bestellung 26188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1312+0.37 EUR
Mindestbestellmenge: 1312
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NCV8160AMX250TBG ncv8160-d.pdf
NCV8160AMX250TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCV8160AMX250TBG ncv8160-d.pdf
NCV8160AMX250TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.74 EUR
26+0.69 EUR
100+0.55 EUR
250+0.51 EUR
500+0.43 EUR
1000+0.34 EUR
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NCP114AMX250TBG ncp114-d.pdf
NCP114AMX250TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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NCP114AMX250TBG ncp114-d.pdf
NCP114AMX250TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 11870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
40+0.45 EUR
49+0.37 EUR
100+0.27 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.18 EUR
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NCV20092DMR2G ncs2009-d.pdf
NCV20092DMR2G
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.53 EUR
Mindestbestellmenge: 4000
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NCV20092DMR2G ncs2009-d.pdf
NCV20092DMR2G
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
15+1.2 EUR
25+1.12 EUR
100+0.92 EUR
250+0.85 EUR
500+0.73 EUR
1000+0.58 EUR
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NCV68261MTWAITBG ncv68261-d.pdf
NCV68261MTWAITBG
Hersteller: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV68261MTWAITBG ncv68261-d.pdf
NCV68261MTWAITBG
Hersteller: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FDMS86181 fdms86181-d.pdf
FDMS86181
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.88 EUR
Mindestbestellmenge: 3000
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FDMS86181 fdms86181-d.pdf
FDMS86181
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
auf Bestellung 8204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+3.7 EUR
100+2.58 EUR
500+2.1 EUR
1000+1.94 EUR
Mindestbestellmenge: 4
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NTMFD1D1N02X ntmfd1d1n02x-d.pdf
NTMFD1D1N02X
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 14A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 375000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.77 EUR
Mindestbestellmenge: 3000
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NCP5010FCT1G NCP5010-D.pdf
Hersteller: onsemi
Description: IC LED DRV RGLT ANALOG 8FLIPCHIP
Produkt ist nicht verfügbar
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LM4041BSD-122GT3 ONSMS35192-1.pdf?t.download=true&u=5oefqw
LM4041BSD-122GT3
Hersteller: onsemi
Description: VOLTAGE REFERENCES, PRECISION MI
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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2N7002V 2N7002VA-D.pdf
2N7002V
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.2 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
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2N7002V 2N7002VA-D.pdf
2N7002V
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
auf Bestellung 29877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
30+0.59 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.28 EUR
Mindestbestellmenge: 22
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CAT863MTBI-GT3 cat853-d.pdf
CAT863MTBI-GT3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
761+0.62 EUR
Mindestbestellmenge: 761
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CAT863TTBI-GT3 cat853-d.pdf
CAT863TTBI-GT3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
auf Bestellung 12468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
825+0.58 EUR
Mindestbestellmenge: 825
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KSC5305DTU KSC5305D.pdf
KSC5305DTU
Hersteller: onsemi
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
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MTD3055V mtd3055v-d.pdf
MTD3055V
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
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2N3820 2N3820.pdf
2N3820
Hersteller: onsemi
Description: JFET P-CH 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Produkt ist nicht verfügbar
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NP3100GBRLG DO-15_NP_Series.pdf
NP3100GBRLG
Hersteller: onsemi
Description: THYRISTOR 275V 80A DO204AC
Produkt ist nicht verfügbar
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NSVS50031SB3T1G nsvs50030sb3-d.pdf
NSVS50031SB3T1G
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVS50031SB3T1G nsvs50030sb3-d.pdf
NSVS50031SB3T1G
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
Mindestbestellmenge: 11
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CPH6121-TL-E
CPH6121-TL-E
Hersteller: onsemi
Description: TRANS PNP 12V 3A 6CPH
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.3 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2219+0.23 EUR
Mindestbestellmenge: 2219
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FDLL400 FAIRS44756-1.pdf?t.download=true&u=5oefqw
FDLL400
Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.099 EUR
5000+0.094 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDLL400 FAIRS44756-1.pdf?t.download=true&u=5oefqw
FDLL400
Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 7484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
46+0.38 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 33
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MMUN2113LT3 MMUN21xxLT1%2C3_Series.pdf
MMUN2113LT3
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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MMUN2113LT1 MMUN21xxLT1%2C3_Series.pdf
MMUN2113LT1
Hersteller: onsemi
Description: TRANS BRT PNP 100MA 50V SOT23
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NC7S02M5X-L22090 nc7s02-d.pdf
NC7S02M5X-L22090
Hersteller: onsemi
Description: IC GATE NOR 1CH 2-INP SOT23-5
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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MUN2112T3 ONSMS04075-1.pdf?t.download=true&u=5oefqw
MUN2112T3
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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