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PCDP2065GB_T0_00601 PCDP2065GB_T0_00601 Panjit International Inc. PCDP2065GB.pdf Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1211pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.58 EUR
10+14.21 EUR
100+11.84 EUR
500+10.45 EUR
1000+9.4 EUR
Mindestbestellmenge: 2
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MMBT5551W_R1_00701 MMBT5551W_R1_00701 Panjit International Inc. MMBT5551W.pdf Description: TRANS NPN 160V 0.6A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.049 EUR
6000+0.044 EUR
9000+0.041 EUR
15000+0.038 EUR
21000+0.036 EUR
Mindestbestellmenge: 3000
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MMBT5551W_R1_00701 MMBT5551W_R1_00701 Panjit International Inc. MMBT5551W.pdf Description: TRANS NPN 160V 0.6A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
auf Bestellung 23024 Stücke:
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67+0.26 EUR
115+0.15 EUR
187+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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MMBT5551W-AU_R1_007A1 MMBT5551W-AU_R1_007A1 Panjit International Inc. MMBT5551W-AU.pdf Description: TRANS 160V 0.6A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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3000+0.062 EUR
6000+0.056 EUR
9000+0.052 EUR
15000+0.048 EUR
21000+0.046 EUR
30000+0.044 EUR
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MMBT5551W-AU_R1_007A1 MMBT5551W-AU_R1_007A1 Panjit International Inc. MMBT5551W-AU.pdf Description: TRANS 160V 0.6A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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P4SMAJ110CAS_R1_00001 P4SMAJ110CAS_R1_00001 Panjit International Inc. P4SMAJ8.5AS_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA (DO-214AC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ110CAS_R1_00001 P4SMAJ110CAS_R1_00001 Panjit International Inc. P4SMAJ8.5AS_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA (DO-214AC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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PG5402_R2_00001 PG5402_R2_00001 Panjit International Inc. PG5400_SERIES.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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PG5402_R2_00001 PG5402_R2_00001 Panjit International Inc. PG5400_SERIES.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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PG302R_R2_00001 PG302R_R2_00001 Panjit International Inc. PG300R_SERIES.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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PG302R_R2_00001 PG302R_R2_00001 Panjit International Inc. PG300R_SERIES.pdf Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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P4SMAJ22CA_R1_00001 P4SMAJ22CA_R1_00001 Panjit International Inc. P4SMAJ_SERIES.pdf Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ22CA_R1_00001 P4SMAJ22CA_R1_00001 Panjit International Inc. P4SMAJ_SERIES.pdf Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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5KMC14AS_R1_00001 5KMC14AS_R1_00001 Panjit International Inc. 5KMC12AS_Series.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.04 EUR
1600+1.03 EUR
Mindestbestellmenge: 800
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5KMC14AS_R1_00001 5KMC14AS_R1_00001 Panjit International Inc. 5KMC12AS_Series.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
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5+3.66 EUR
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5KMC14CAS_R1_00001 5KMC14CAS_R1_00001 Panjit International Inc. 5KMC12AS_Series.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
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800+1.4 EUR
1600+1.3 EUR
2400+1.25 EUR
Mindestbestellmenge: 800
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5KMC14CAS_R1_00001 5KMC14CAS_R1_00001 Panjit International Inc. 5KMC12AS_Series.pdf Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
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5+4.17 EUR
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SX34-AU_R1_000A1 SX34-AU_R1_000A1 Panjit International Inc. SX34-AU.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SX34-AU_R1_000A1 SX34-AU_R1_000A1 Panjit International Inc. SX34-AU.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1770 Stücke:
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26+0.69 EUR
34+0.53 EUR
100+0.31 EUR
500+0.23 EUR
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MMBZ5256AW_R1_00001 MMBZ5256AW_R1_00001 Panjit International Inc. MMBZ5229AW_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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MMBZ5256AW_R1_00001 MMBZ5256AW_R1_00001 Panjit International Inc. MMBZ5229AW_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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MMBZ5256A_R1_00001 MMBZ5256A_R1_00001 Panjit International Inc. MMBZ5229A_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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MMBZ5256A_R1_00001 MMBZ5256A_R1_00001 Panjit International Inc. MMBZ5229A_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
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BZX84B2V4-AU_R1_000A1 BZX84B2V4-AU_R1_000A1 Panjit International Inc. BZX84B2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B2V4-AU_R1_000A1 BZX84B2V4-AU_R1_000A1 Panjit International Inc. BZX84B2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.08%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
134+0.13 EUR
197+0.089 EUR
500+0.068 EUR
1000+0.06 EUR
Mindestbestellmenge: 91
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BZX84B2V4_R1_00001 BZX84B2V4_R1_00001 Panjit International Inc. BZX84B2V4_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
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BZX84B2V4_R1_00001 BZX84B2V4_R1_00001 Panjit International Inc. BZX84B2V4_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 2815 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
83+0.21 EUR
124+0.14 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 56
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BZX84B2V4W_R1_00001 BZX84B2V4W_R1_00001 Panjit International Inc. BZX84B2V4W_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
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BZX84B2V4W_R1_00001 BZX84B2V4W_R1_00001 Panjit International Inc. BZX84B2V4W_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMC5342_R1_00001 1SMC5342_R1_00001 Panjit International Inc. 1SMC5338_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.39 EUR
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1SMC5342_R1_00001 1SMC5342_R1_00001 Panjit International Inc. 1SMC5338_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
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1SMC5342-AU_R1_000A1 1SMC5342-AU_R1_000A1 Panjit International Inc. 1SMC5338-AU_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMC5342-AU_R1_000A1 1SMC5342-AU_R1_000A1 Panjit International Inc. 1SMC5338-AU_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU1506ULV_T0_00601 GBU1506ULV_T0_00601 Panjit International Inc. GBU1506ULV.pdf Description: BRIDGE RECT 1P 600V 15A GBU-2
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3867 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.64 EUR
20+5.15 EUR
100+4.11 EUR
500+3.41 EUR
1000+3.23 EUR
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PJQ5448-AU_R2_000A1 PJQ5448-AU_R2_000A1 Panjit International Inc. PJQ5448-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000
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PJQ5448-AU_R2_000A1 PJQ5448-AU_R2_000A1 Panjit International Inc. PJQ5448-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 8996 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
20+0.9 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 13
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PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU_R2_002A1 Panjit International Inc. PJQ4548VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.45 EUR
Mindestbestellmenge: 5000
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PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU_R2_002A1 Panjit International Inc. PJQ4548VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
Mindestbestellmenge: 15
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PJQ5548-AU_R2_002A1 PJQ5548-AU_R2_002A1 Panjit International Inc. PJQ5548-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548-AU_R2_002A1 PJQ5548-AU_R2_002A1 Panjit International Inc. PJQ5548-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
15+1.23 EUR
100+0.83 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546P-AU_R2_002A1 PJQ4546P-AU_R2_002A1 Panjit International Inc. PJQ4546P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.55 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546P-AU_R2_002A1 PJQ4546P-AU_R2_002A1 Panjit International Inc. PJQ4546P-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
16+1.14 EUR
100+0.88 EUR
500+0.75 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548V-AU_R2_002A1 PJQ5548V-AU_R2_002A1 Panjit International Inc. PJQ5548V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.48 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548V-AU_R2_002A1 PJQ5548V-AU_R2_002A1 Panjit International Inc. PJQ5548V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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PJQ5542-AU_R2_002A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5542-AU_R2_002A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5540-AU_R2_002A1 Panjit International Inc. PJQ5540-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5540-AU_R2_002A1 Panjit International Inc. PJQ5540-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
10+3.27 EUR
100+2.99 EUR
500+2.44 EUR
1000+2.25 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4444P_R2_00001 PJQ4444P_R2_00001 Panjit International Inc. PJQ4444P.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4444P_R2_00001 PJQ4444P_R2_00001 Panjit International Inc. PJQ4444P.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
auf Bestellung 4677 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
21+0.87 EUR
100+0.6 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 Panjit International Inc. PJQ4546VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 Panjit International Inc. PJQ4546VP-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
15+1.21 EUR
100+0.94 EUR
500+0.8 EUR
1000+0.65 EUR
2000+0.61 EUR
Mindestbestellmenge: 12
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PJQ5546-AU_R2_002A1 PJQ5546-AU_R2_002A1 Panjit International Inc. PJQ5546-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5546-AU_R2_002A1 PJQ5546-AU_R2_002A1 Panjit International Inc. PJQ5546-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
13+1.4 EUR
100+0.97 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 9
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Panjit International Inc. PJQ5546V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 Panjit International Inc. PJQ5546V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.44 EUR
100+1 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 9
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Panjit International Inc. PJQ5544-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 Panjit International Inc. PJQ5544-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+2 EUR
100+1.42 EUR
500+1.2 EUR
1000+1.1 EUR
Mindestbestellmenge: 6
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PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 Panjit International Inc. PJQ5544V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 Panjit International Inc. PJQ5544V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+2.07 EUR
100+1.47 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
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PCDP2065GB_T0_00601 PCDP2065GB.pdf
PCDP2065GB_T0_00601
Hersteller: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1211pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.58 EUR
10+14.21 EUR
100+11.84 EUR
500+10.45 EUR
1000+9.4 EUR
Mindestbestellmenge: 2
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MMBT5551W_R1_00701 MMBT5551W.pdf
MMBT5551W_R1_00701
Hersteller: Panjit International Inc.
Description: TRANS NPN 160V 0.6A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.049 EUR
6000+0.044 EUR
9000+0.041 EUR
15000+0.038 EUR
21000+0.036 EUR
Mindestbestellmenge: 3000
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MMBT5551W_R1_00701 MMBT5551W.pdf
MMBT5551W_R1_00701
Hersteller: Panjit International Inc.
Description: TRANS NPN 160V 0.6A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
auf Bestellung 23024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
115+0.15 EUR
187+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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MMBT5551W-AU_R1_007A1 MMBT5551W-AU.pdf
MMBT5551W-AU_R1_007A1
Hersteller: Panjit International Inc.
Description: TRANS 160V 0.6A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.062 EUR
6000+0.056 EUR
9000+0.052 EUR
15000+0.048 EUR
21000+0.046 EUR
30000+0.044 EUR
Mindestbestellmenge: 3000
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MMBT5551W-AU_R1_007A1 MMBT5551W-AU.pdf
MMBT5551W-AU_R1_007A1
Hersteller: Panjit International Inc.
Description: TRANS 160V 0.6A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
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P4SMAJ110CAS_R1_00001 P4SMAJ8.5AS_SERIES.pdf
P4SMAJ110CAS_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA (DO-214AC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ110CAS_R1_00001 P4SMAJ8.5AS_SERIES.pdf
P4SMAJ110CAS_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA (DO-214AC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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PG5402_R2_00001 PG5400_SERIES.pdf
PG5402_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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PG5402_R2_00001 PG5400_SERIES.pdf
PG5402_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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PG302R_R2_00001 PG300R_SERIES.pdf
PG302R_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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PG302R_R2_00001 PG300R_SERIES.pdf
PG302R_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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P4SMAJ22CA_R1_00001 P4SMAJ_SERIES.pdf
P4SMAJ22CA_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ22CA_R1_00001 P4SMAJ_SERIES.pdf
P4SMAJ22CA_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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5KMC14AS_R1_00001 5KMC12AS_Series.pdf
5KMC14AS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.04 EUR
1600+1.03 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
5KMC14AS_R1_00001 5KMC12AS_Series.pdf
5KMC14AS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
5KMC14CAS_R1_00001 5KMC12AS_Series.pdf
5KMC14CAS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.4 EUR
1600+1.3 EUR
2400+1.25 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
5KMC14CAS_R1_00001 5KMC12AS_Series.pdf
5KMC14CAS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 216A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SX34-AU_R1_000A1 SX34-AU.pdf
SX34-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SX34-AU_R1_000A1 SX34-AU.pdf
SX34-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.53 EUR
100+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5256AW_R1_00001 MMBZ5229AW_SERIES.pdf
MMBZ5256AW_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5256AW_R1_00001 MMBZ5229AW_SERIES.pdf
MMBZ5256AW_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5256A_R1_00001 MMBZ5229A_SERIES.pdf
MMBZ5256A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5256A_R1_00001 MMBZ5229A_SERIES.pdf
MMBZ5256A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B2V4-AU_R1_000A1 BZX84B2V4-AU_SERIES.pdf
BZX84B2V4-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B2V4-AU_R1_000A1 BZX84B2V4-AU_SERIES.pdf
BZX84B2V4-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.08%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
134+0.13 EUR
197+0.089 EUR
500+0.068 EUR
1000+0.06 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B2V4_R1_00001 BZX84B2V4_SERIES.pdf
BZX84B2V4_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B2V4_R1_00001 BZX84B2V4_SERIES.pdf
BZX84B2V4_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 2815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
83+0.21 EUR
124+0.14 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B2V4W_R1_00001 BZX84B2V4W_SERIES.pdf
BZX84B2V4W_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B2V4W_R1_00001 BZX84B2V4W_SERIES.pdf
BZX84B2V4W_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMC5342_R1_00001 1SMC5338_SERIES.pdf
1SMC5342_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.39 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
1SMC5342_R1_00001 1SMC5338_SERIES.pdf
1SMC5342_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
1SMC5342-AU_R1_000A1 1SMC5338-AU_SERIES.pdf
1SMC5342-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMC5342-AU_R1_000A1 1SMC5338-AU_SERIES.pdf
1SMC5342-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU1506ULV_T0_00601 GBU1506ULV.pdf
GBU1506ULV_T0_00601
Hersteller: Panjit International Inc.
Description: BRIDGE RECT 1P 600V 15A GBU-2
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 3867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.64 EUR
20+5.15 EUR
100+4.11 EUR
500+3.41 EUR
1000+3.23 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5448-AU_R2_000A1 PJQ5448-AU.pdf
PJQ5448-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5448-AU_R2_000A1 PJQ5448-AU.pdf
PJQ5448-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 8996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.9 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU.pdf
PJQ4548VP-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.45 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU.pdf
PJQ4548VP-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548-AU_R2_002A1 PJQ5548-AU.pdf
PJQ5548-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548-AU_R2_002A1 PJQ5548-AU.pdf
PJQ5548-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
15+1.23 EUR
100+0.83 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546P-AU_R2_002A1 PJQ4546P-AU.pdf
PJQ4546P-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546P-AU_R2_002A1 PJQ4546P-AU.pdf
PJQ4546P-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.14 EUR
100+0.88 EUR
500+0.75 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
PJQ5548V-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.48 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
PJQ5548V-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5542-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5542-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5540-AU_R2_002A1 PJQ5540-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5540-AU_R2_002A1 PJQ5540-AU.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+3.27 EUR
100+2.99 EUR
500+2.44 EUR
1000+2.25 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4444P_R2_00001 PJQ4444P.pdf
PJQ4444P_R2_00001
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4444P_R2_00001 PJQ4444P.pdf
PJQ4444P_R2_00001
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
auf Bestellung 4677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
21+0.87 EUR
100+0.6 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.21 EUR
100+0.94 EUR
500+0.8 EUR
1000+0.65 EUR
2000+0.61 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546-AU_R2_002A1 PJQ5546-AU.pdf
PJQ5546-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546-AU_R2_002A1 PJQ5546-AU.pdf
PJQ5546-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
13+1.4 EUR
100+0.97 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.44 EUR
100+1 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2 EUR
100+1.42 EUR
500+1.2 EUR
1000+1.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+2.07 EUR
100+1.47 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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