Suchergebnisse für "tf085" : 39

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HUFA75639S3ST-F085A HUFA75639S3ST-F085A Fairchild Semiconductor FAIRS31838-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 497 Stücke:
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221+2.06 EUR
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HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3761 Stücke:
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100+1.65 EUR
500+1.32 EUR
1000+1.31 EUR
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HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi / Fairchild huf76407dk_f085-d.pdf MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
auf Bestellung 2296 Stücke:
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10+2.43 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.27 EUR
2500+1.11 EUR
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HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+1.1 EUR
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HUFA76645S3ST-F085 HUFA76645S3ST-F085 onsemi / Fairchild HUF76645S_F085_D-1810298.pdf MOSFETs 100V 75A 0.015ohm N-CH
auf Bestellung 5 Stücke:
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1+7.3 EUR
10+4.82 EUR
100+3.78 EUR
500+3.36 EUR
800+2.97 EUR
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ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: IGBT 430V 21A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
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ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: IGBT 430V 21A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
auf Bestellung 5374 Stücke:
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100+1.74 EUR
500+1.39 EUR
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ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C onsemi isl9v3040-f085c-d.pdf IGBTs ECOSPARK1 IGN-IGBT TO252
auf Bestellung 2901 Stücke:
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100+1.74 EUR
500+1.4 EUR
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ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: IGBT 400V 21A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 925 Stücke:
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10+3.47 EUR
100+2.42 EUR
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ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C onsemi isl9v3040-f085c-d.pdf IGBTs ECOSPARK1 IGN-IGBT
auf Bestellung 2216 Stücke:
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500+1.88 EUR
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ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: IGBT 400V 21A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
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800+1.87 EUR
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ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 onsemi isl9v5045s-f085-d.pdf Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
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800+3.34 EUR
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ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 onsemi / Fairchild isl9v5045s-f085-d.pdf IGBTs 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
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ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 onsemi isl9v5045s-f085-d.pdf Description: IGBT 480V 51A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2944 Stücke:
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ISL9V5045S3ST-F085C ISL9V5045S3ST-F085C onsemi isl9v5045s3st-f085c-d.pdf Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
auf Bestellung 1600 Stücke:
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800+2.86 EUR
1600+2.79 EUR
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ISL9V5045S3ST-F085C ISL9V5045S3ST-F085C onsemi isl9v5045s3st-f085c-d.pdf Description: IGBT 480V 51A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
auf Bestellung 1744 Stücke:
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ISL9V5045S3ST-F085C onsemi isl9v5045s3st-f085c-d.pdf IGBTs ECOSPARK1 IGN-IGBT TO263
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ISL9V3040D3ST-F085C ON Semiconductor isl9v3040-f085c-d.pdf
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HUF76633S3ST-F085
Produktcode: 132414
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HUF76633S3ST_F085.pdf Transistoren > MOSFET N-CH
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FDS9431A-TF085 FDS9431A-TF085 onsemi FDS9431A_F085-D.PDF Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Qualification: AEC-Q101
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HUF76419S3ST-F085 HUF76419S3ST-F085 onsemi Description: MOSFET N-CH 60V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
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HUF76629D3ST-F085 HUF76629D3ST-F085 onsemi huf76629d3s-d.pdf Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
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HUF76633S3ST-F085 HUF76633S3ST-F085 onsemi HUF76633S3ST_F085.pdf Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
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HUF76633S3ST-F085 HUF76633S3ST-F085 onsemi HUF76633S3ST_F085.pdf Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
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HUF76639S3ST-F085 HUF76639S3ST-F085 onsemi huf76639s3s-d.pdf Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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HUF76639S3ST-F085 HUF76639S3ST-F085 onsemi huf76639s3s-d.pdf Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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HUFA75639S3ST-F085A HUFA75639S3ST-F085A onsemi hufa75639s3s-d.pdf Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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HUFA76407DK8TF085P HUFA76407DK8TF085P onsemi Description: MOSFET 2N-CH 60V 3.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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HUFA76413DK8T-F085 HUFA76413DK8T-F085 onsemi HUFA76413DK8T-F085.pdf Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76413DK8T-F085P HUFA76413DK8T-F085P onsemi Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76429D3ST-F085 HUFA76429D3ST-F085 onsemi Description: MOSFET N-CH 60V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76645S3ST-F085 HUFA76645S3ST-F085 onsemi huf76645s-f085-d.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
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ISL9V2540S3ST-F085C ISL9V2540S3ST-F085C onsemi ISL9V2540S3ST-F085C-D.PDF Description: IGBT 390V 15.5A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 610ns/3.64µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 15.1 nC
Grade: Automotive
Current - Collector (Ic) (Max): 15.5 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 166.7 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V3036S3ST-F085C ISL9V3036S3ST-F085C onsemi Description: IGBT 360V 21A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Gate Charge: 17 nC
Grade: Automotive
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 360 V
Power - Max: 150 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V5036S3ST-F085C ISL9V5036S3ST-F085C onsemi ISL9V5036S3ST-D.PDF Description: IGBT 390V 46A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/10.8µs
Gate Charge: 32 nC
Grade: Automotive
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76407DK8T-F085 ONSEMI huf76407dk_f085-d.pdf HUFA76407DK8T-F085 SMD N channel transistors
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FDD4243-F085 FDD4243-F085 onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD4243-F085 FDD4243-F085 onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDS2672-F085 FDS2672-F085 onsemi fds2672_f085-d.pdf Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA75639S3ST-F085A FAIRS31838-1.pdf?t.download=true&u=5oefqw
HUFA75639S3ST-F085A
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.06 EUR
Mindestbestellmenge: 221
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HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.41 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.31 EUR
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HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Hersteller: onsemi / Fairchild
MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
auf Bestellung 2296 Stücke:
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Anzahl Preis
1+3.75 EUR
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100+1.66 EUR
500+1.33 EUR
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HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.1 EUR
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HUFA76645S3ST-F085 HUF76645S_F085_D-1810298.pdf
HUFA76645S3ST-F085
Hersteller: onsemi / Fairchild
MOSFETs 100V 75A 0.015ohm N-CH
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.3 EUR
10+4.82 EUR
100+3.78 EUR
500+3.36 EUR
800+2.97 EUR
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ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Hersteller: onsemi
Description: IGBT 430V 21A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
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ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Hersteller: onsemi
Description: IGBT 430V 21A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
auf Bestellung 5374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.53 EUR
100+1.74 EUR
500+1.39 EUR
1000+1.28 EUR
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ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Hersteller: onsemi
IGBTs ECOSPARK1 IGN-IGBT TO252
auf Bestellung 2901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.92 EUR
10+2.53 EUR
100+1.74 EUR
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ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040S3ST-F085C
Hersteller: onsemi
Description: IGBT 400V 21A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 925 Stücke:
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Anzahl Preis
4+5.32 EUR
10+3.47 EUR
100+2.42 EUR
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ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040S3ST-F085C
Hersteller: onsemi
IGBTs ECOSPARK1 IGN-IGBT
auf Bestellung 2216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.32 EUR
10+3.47 EUR
100+2.43 EUR
500+1.88 EUR
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ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040S3ST-F085C
Hersteller: onsemi
Description: IGBT 400V 21A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.87 EUR
Mindestbestellmenge: 800
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ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
ISL9V5045S3ST-F085
Hersteller: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.34 EUR
Mindestbestellmenge: 800
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ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
ISL9V5045S3ST-F085
Hersteller: onsemi / Fairchild
IGBTs 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
auf Bestellung 5834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.52 EUR
10+5.83 EUR
100+4.19 EUR
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ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
ISL9V5045S3ST-F085
Hersteller: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.69 EUR
10+5.82 EUR
100+4.18 EUR
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ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
ISL9V5045S3ST-F085C
Hersteller: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.86 EUR
1600+2.79 EUR
Mindestbestellmenge: 800
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ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
ISL9V5045S3ST-F085C
Hersteller: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
auf Bestellung 1744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
10+3.85 EUR
25+3.54 EUR
100+3.19 EUR
250+3.02 EUR
Mindestbestellmenge: 4
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ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
Hersteller: onsemi
IGBTs ECOSPARK1 IGN-IGBT TO263
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.14 EUR
10+3.54 EUR
100+3.03 EUR
500+2.87 EUR
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ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 4720 Stücke:
Lieferzeit 21-28 Tag (e)
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HUF76633S3ST-F085
Produktcode: 132414
zu Favoriten hinzufügen Lieblingsprodukt

HUF76633S3ST_F085.pdf
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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FDS9431A-TF085 FDS9431A_F085-D.PDF
FDS9431A-TF085
Hersteller: onsemi
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Qualification: AEC-Q101
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HUF76419S3ST-F085
HUF76419S3ST-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
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HUF76629D3ST-F085 huf76629d3s-d.pdf
HUF76629D3ST-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
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HUF76633S3ST-F085 HUF76633S3ST_F085.pdf
HUF76633S3ST-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUF76633S3ST-F085 HUF76633S3ST_F085.pdf
HUF76633S3ST-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUF76639S3ST-F085 huf76639s3s-d.pdf
HUF76639S3ST-F085
Hersteller: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUF76639S3ST-F085 huf76639s3s-d.pdf
HUF76639S3ST-F085
Hersteller: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA75639S3ST-F085A hufa75639s3s-d.pdf
HUFA75639S3ST-F085A
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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HUFA76407DK8TF085P
HUFA76407DK8TF085P
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 3.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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HUFA76413DK8T-F085 HUFA76413DK8T-F085.pdf
HUFA76413DK8T-F085
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76413DK8T-F085P
HUFA76413DK8T-F085P
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76429D3ST-F085
HUFA76429D3ST-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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HUFA76645S3ST-F085 huf76645s-f085-d.pdf
HUFA76645S3ST-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V2540S3ST-F085C ISL9V2540S3ST-F085C-D.PDF
ISL9V2540S3ST-F085C
Hersteller: onsemi
Description: IGBT 390V 15.5A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 610ns/3.64µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 15.1 nC
Grade: Automotive
Current - Collector (Ic) (Max): 15.5 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 166.7 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V3036S3ST-F085C
ISL9V3036S3ST-F085C
Hersteller: onsemi
Description: IGBT 360V 21A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Gate Charge: 17 nC
Grade: Automotive
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 360 V
Power - Max: 150 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V5036S3ST-F085C ISL9V5036S3ST-D.PDF
ISL9V5036S3ST-F085C
Hersteller: onsemi
Description: IGBT 390V 46A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/10.8µs
Gate Charge: 32 nC
Grade: Automotive
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
Qualification: AEC-Q101
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HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
Hersteller: ONSEMI
HUFA76407DK8T-F085 SMD N channel transistors
Produkt ist nicht verfügbar
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FDD4243-F085 fdd4243_f085-d.pdf
FDD4243-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD4243-F085 fdd4243_f085-d.pdf
FDD4243-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDS2672-F085 fds2672_f085-d.pdf
FDS2672-F085
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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