Produkte > RENESAS > Alle Produkte des Herstellers RENESAS (16010) > Seite 1 nach 267

Hersteller: Renesas
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 350 MHz
Uceo,V: 120 V
Ucbo,V: 120 V
Ic,A: 0,05 A
h21: 800

Hersteller: Renesas
Transistoren > MOSFET N-CH
Gehäuse: TO-3P
Drain-Source-Spannung Uds, V: 160 V
Drain-Strom Idd, A: 7 А
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 600/
Montage: THT

Hersteller: Renesas
Transistoren > MOSFET N-CH
Gehäuse: TO-3P
Drain-Source-Spannung Uds, V: 160 V
Drain-Strom Idd, A: 7 А
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 600/
Montage: THT

Hersteller: Renesas
Modulare Elemente > IC Radiomodule
Funktionsbeschreibung: Rauscharmer Verstärker für GPS und mobile Telekommunikation
Abmessungen: 6-pin
Versorgung, V: 2,7...3,3 V
T, °C: -25...+85°C

Hersteller: Renesas
IC > IC Interface

Hersteller: Renesas
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,3 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1100/ -
Bemerkung: Ізольований корпус
Montage: THT

Hersteller: Renesas
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-3
Drain-Source-Spannung Uds, V: 160 V
Drain-Strom Id, A: 7 A
Montage: THT

Hersteller: Renesas
IC > IC Analog
Gehäuse: DIP-16
Funktionsbeschreibung: Analogschalter
Versorgungsspannung, V: 5…14 V
Temperaturbereich, °C: -20...+75°C

Hersteller: Renesas
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 60 V
Drain-Strom Idd, A: 40 A
Durchlasswiderstand Rds(on), Ohm: 15 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1500/
Montage: THT

Hersteller: Renesas
IC > IC Speicher
Gehäuse: LQFP-48
Funktionsbeschreibung: Mikrocontroller Flash 64 Kbit + 4 Kbit ROM + 2 Kbit RAM
Versorgung, V: 3...5,5 V
T°C: -40...+85 °C

Hersteller: Renesas
Transistoren > MOSFET N-CH
Gehäuse: SC-62
Drain-Source-Spannung Uds, V: 16 V
Drain-Strom Idd, A: 3 А
Durchlasswiderstand Rds(on), Ohm: 0,25 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 240/
Montage: SMD

Hersteller: Renesas
Transistoren > Transistoren P-Kanal-Feld
Drain-Source-Spannung Uds, V: 60 V
Drain-Strom Id, A: 30 A
Durchlasswiderstand Rds(on), Ohm: 24 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 4120/140

Hersteller: Renesas
IC > IC Mikrokontroller
Gehäusetyp: SSOP-16
Kurzbeschreibung: 8BIT 1KB FLASH
Versorgungsspannung, V: 2,0...5,5 V
Kerntyp: 78K0S
Bitbreite: 8-Bit
Frequenz: 10MHz
Betriebstemperatur, °C: -40…+85°C

Hersteller: Renesas
Modulare Elemente > Programmierer und Debugging-Tools
Entwicklungstyp: Налагоджувальна плата

Hersteller: Renesas
Modulare Elemente > Programmierer und Debugging-Tools
Beschreibung: The Renesas Promotion Board is pre-programmed to work with the GUI provided on the included DVD to demonstrate the key low power capabilities of the RL78/L12 device family along with it's direct drive LCD functionality. The RPBRL78L12 includes RL78/L12 CPU board with custom segment LCD integrated, On Chip Debugger (OCD), Eclipse based e2studio (a Integrated Development Environment), Free of charge GNU compiler and Example embedded code, extensive documentation. This device family is also fully supported by our key development partner IAR Systems.

Hersteller: Renesas
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-3P
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 1,6 V
Kollektorstrom Ic bei 25°C, A: 90 A
Kollektorstrom Ic bei 100°C, A: 50 A

Hersteller: Renesas
Modulare Elemente > Programmierer und Debugging-Tools
Beschreibung: Board 78K0R FG3 UPD78F1845 TEST
Entwicklungstyp: Налагоджувальна плата

Hersteller: Renesas
IC > IC Speicher
Gehäuse: LSSOP-20
Funktionsbeschreibung: 16-Bit-MCU, 8K Flash, 512K RAM, 20MHz
Versorgung, V: 2,7...4,5 V
T°C: -20...+85 °C

Hersteller: Renesas
IC > IC Mikrokontroller
Kurzbeschreibung: 4-bit microcomputer with large-capacity memory

Hersteller: Renesas
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220FN
Kollektor-Emitter-Spannung Vces, V: 430 V

Hersteller: RENESAS
Thyristoren, Dynistors, Triacs > Thyristoren, Dynistors

Hersteller: RENESAS
Transistoren > MOSFET N-CH

Hersteller: RENESAS
IC > Optokoppler (Optrone)

Hersteller: Renesas
IC > IC Logik
Gehäuse: DIP-14
Beschreibung: Vierfach-2-Eingang NAND-Gatter
Montage: THT (Durchsteckmontage)
Versorgung, V: 4,75...5,25 V
Temperatur, °C: -20...+75°C
Logikgatter-Typ: NAND (UND-NICHT)
8542 39 90 00

Hersteller: Renesas
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-3P
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 1,35 V
Kollektorstrom Ic bei 25°C, A: 90 A
Kollektorstrom Ic bei 100°C, A: 50 A
Verlustleistung Pd bei 25°C, W: 328 W
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 63/142

Hersteller: Renesas
IC > IC Speicher
Gehäuse: SOIC-32
Funktionsbeschreibung: SRAM 1MBIT, 55 ns
Versorgung, V: 4,5...5,5 V
T°C: -40...+85 °C
Speichertyp: SRAM
Speicherkapazität: 1 Mbit
Schnittstelle: Parallel

Hersteller: Renesas
IC > IC Mikrokontroller
Gehäusetyp: DIP-40
Kurzbeschreibung: Microprocessors - MPU CPU 16BIT 5V CMOS 8MHZ
Versorgungsspannung, V: 5 V
Kerntyp: 80C86

Hersteller: Renesas
IC > IC Mikrokontroller
Gehäusetyp: LFQFP-48
Kurzbeschreibung: RX RX100 Mikrocontroller IC 32-Bit 32MHz 32KB (32K x 8) FLASH
Versorgungsspannung, V: 1,8...3,6 V
Kerntyp: RX
Bitbreite: 32-Bit
Frequenz: 32MHz

Hersteller: Renesas

SO-8
Array NPN transistor. VCEO: 8V. VCBO: 12V. VEBO:5,5V. IC:30mA

Hersteller: RENESAS
Transistoren > Transistoren IGBT, Leistungsmodule

Hersteller: Renesas
Modulare Elemente > Programmierer und Debugging-Tools

Hersteller: RENESAS
IC > IC Niederfrequenzverstärker

Hersteller: Renesas
Description: MICROCONTROLLER, 32-BIT, SH7000
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: TRANS PNP 25V 0.7A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW

Hersteller: Renesas
Description: X9317 - DIGITAL POTENTIOMETER

Hersteller: Renesas
Description: X9317 - DIGITAL POTENTIOMETER

Hersteller: Renesas
Description: IC SIGE:C LNA 6 MINIMOLD

Hersteller: Renesas
Description: MICROCONTROLLER, 32-BIT, V850, 2
Packaging: Bulk
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: IC MCU 16BIT 16KB FLASH 64LFQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: R8C
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, SSU, UART/USART
Peripherals: LCD, POR, PWM, Voltage Detect, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 56
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: STANDARD SRAM, 2MX36, 0.45NS, CM
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: ADJUSTABLE POSITIVE STANDARD REG
Packaging: Bulk

Hersteller: Renesas
Description: STANDARD SRAM, 32KX8, 70NS, CMOS
DigiKey Programmable: Not Verified
Packaging: Bulk

Hersteller: Renesas
Description: R1LV3216R - LOW POWER SRAM, 2MX1
Packaging: Bulk
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Single Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16, 4M x 8
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: IC MCU 16BIT 8KB FLASH 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: R8C
Data Converters: A/D 5x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, SSU, UART/USART
Peripherals: LCD, POR, PWM, Voltage Detect, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified

Hersteller: Renesas
Description: ENCODERS, DECODERS, MULTIPLEXERS
Part Status: Obsolete
Supplier Device Package: 24-CERDIP
Applications: Security Systems
Voltage - Supply, Digital: 4.5V ~ 5.5V
Voltage - Supply, Analog: 4.5V ~ 5.5V
Type: Manchester Encoder/Decoder
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Packaging: Bulk

Hersteller: Renesas
Description: HN58C257 - PARALLEL 256KBIT EEPR
DigiKey Programmable: Not Verified
Packaging: Bulk

Hersteller: Renesas
Description: DIODE VARACTOR 15V SINGLE 2-SFP
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SOD-723
Packaging: Bulk
Capacitance Ratio: 2.2
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: 2-SFP
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 2.95pF @ 4V, 1MHz

Hersteller: Renesas
Description: 2SK3575 - SWITCHING N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 42A, 10V
Power Dissipation (Max): 1.5W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V

Hersteller: Renesas
Description: 2SK2461 - SILICON N CHANNEL MOSF
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V

Hersteller: Renesas
Description: NNCD6.2MF-T1B-AT - LOW CAPACITAN
Power Line Protection: No
Power - Peak Pulse: 2W
Voltage - Breakdown (Min): 5.7V
Unidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 3V (Max)
Capacitance @ Frequency: 20pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk

Hersteller: Renesas
Description: NP60N04ILF-E1-AZ - SWITCHINGN-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V

Hersteller: Renesas
Description: 2SK4150TZ - N-CHANNEL POWER MOSF
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V

Hersteller: Renesas
Description: 2SK4178 - SWITCHING N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V

Hersteller: Renesas
Description: UPA2004 - DARLINGTON TRANSISTOR

Hersteller: Renesas
Description: 2SK2933 - N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220CFM
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V

Hersteller: Renesas
Description: NP88N04NUG-S18-AY - MOS FIELD EF
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA

Hersteller: Renesas
Description: 2SA1836-T1-A - PNP SILICON EPITA
Package / Case: SC-75, SOT-416
Packaging: Bulk
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount

Hersteller: Renesas
Description: 2SJ494 - SWITCHING P-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: MP-45F
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Packaging: Bulk

Hersteller: Renesas
Description: IGBT TRENCH 600V 20A TO-220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/42ns
Switching Energy: 100µJ (on), 130µJ (off)
Test Condition: 300V, 10A, 5Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 30 W

Hersteller: Renesas
Description: IGBT 600V 45A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 45 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 140 W