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RB162MM-30TR RB162MM-30TR Rohm Semiconductor datasheet?p=RB162MM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 1A PMDU
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
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RB168L150TE25 RB168L150TE25 Rohm Semiconductor rb168l150-e Description: DIODE SCHOTTKY 150V 1A PMDS
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RB168L-40TE25 RB168L-40TE25 Rohm Semiconductor rb168l-40.pdf Description: DIODE SCHOTTKY 40V 1A PMDS
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RB168M150TR RB168M150TR Rohm Semiconductor RB168M150.pdf Description: DIODE SCHOTTKY 150V 1A PMDU
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RB168MM-40TR RB168MM-40TR Rohm Semiconductor datasheet?p=RB168MM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 1A PMDU
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
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RB228NS100TL RB228NS100TL Rohm Semiconductor datasheet?p=RB228NS100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 100V 15A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RB425DFHT146 RB425DFHT146 Rohm Semiconductor rb425dfht146-e Description: DIODE ARRAY SCHOTT 40V 50MA SMD3
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io) (per Diode): 50mA
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RB520CM-60T2R RB520CM-60T2R Rohm Semiconductor datasheet?p=RB520CM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
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RB520CS-30T2RA RB520CS-30T2RA Rohm Semiconductor datasheet?p=RB520CS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RB521AS-30T2R RB521AS-30T2R Rohm Semiconductor rb521as-30t2r-e Description: DIODE SCHOTTKY 30V 200MA VML2
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RB521AS-40T2R RB521AS-40T2R Rohm Semiconductor rb521as-40.pdf Description: DIODE SCHOTTKY 40V 200MA VML2
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RB521CS-30T2RA RB521CS-30T2RA Rohm Semiconductor datasheet?p=RB521CS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA VMN2
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
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RB530CM-60T2R RB530CM-60T2R Rohm Semiconductor datasheet?p=RB530CM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
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RB530VM-30TE-17 RB530VM-30TE-17 Rohm Semiconductor datasheet?p=RB530VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RB531VM-40TE-17 RB531VM-40TE-17 Rohm Semiconductor rb531vm-40te-17-e Description: DIODE SCHOTTKY 40V 100MA UMD2
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RB550VAM-30TR RB550VAM-30TR Rohm Semiconductor datasheet?p=RB550VAM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB578VAM100TR RB578VAM100TR Rohm Semiconductor datasheet?p=RB578VAM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
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RB886CST2RA RB886CST2RA Rohm Semiconductor rb886cst2ra-e.pdf Description: DIODE SCHOTTKY 15V 10MA VMN2
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: VMN2 (SOD-923)
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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RBE05SM20AT2R RBE05SM20AT2R Rohm Semiconductor rbe05sm20a.pdf Description: DIODE SCHOTTKY 20V 500MA EMD2
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RBE07V20ATE-17 RBE07V20ATE-17 Rohm Semiconductor rbe07v20a.pdf Description: DIODE SCHOTTKY 20V 700MA UMD2
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RF01VM2STE-17 RF01VM2STE-17 Rohm Semiconductor datasheet?p=RF01VM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
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RF101L2SDDTE25 RF101L2SDDTE25 Rohm Semiconductor datasheet?p=RF101L2SDD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RF4E075ATTCR RF4E075ATTCR Rohm Semiconductor datasheet?p=RF4E075AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 7.5A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RFN3BM2SFHTL RFN3BM2SFHTL Rohm Semiconductor datasheet?p=RFN3BM2SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RFN6BM2DTL RFN6BM2DTL Rohm Semiconductor rfn6bm2d-e Description: DIODE ARRAY GP 200V 3A TO252
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RFNL5BM6STL RFNL5BM6STL Rohm Semiconductor rfnl5bm6s.pdf Description: DIODE GEN PURP 600V 5A TO252
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RFU02VSM6STR RFU02VSM6STR Rohm Semiconductor datasheet?p=RFU02VSM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GP 600V 200MA TUMD2SM
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
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RFUH10NS4STL RFUH10NS4STL Rohm Semiconductor rfuh10ns4s.pdf Description: DIODE GEN PURP 430V 10A LPDS
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RN242CST2RA RN242CST2RA Rohm Semiconductor rn242cs.pdf Description: DIODE PIN HF SW 30V 100MA VMN2
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RQ3E180AJTB RQ3E180AJTB Rohm Semiconductor rq3e180ajtb-e.pdf Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
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RQ5E040AJTCL RQ5E040AJTCL Rohm Semiconductor datasheet?p=RQ5E040AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
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RQ6E055BNTCR RQ6E055BNTCR Rohm Semiconductor datasheet?p=RQ6E055BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
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RR2L4SDDTE25 RR2L4SDDTE25 Rohm Semiconductor rr2l4sdd Description: DIODE GEN PURP 400V 2A PMDS
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RR2L6SDDTE25 RR2L6SDDTE25 Rohm Semiconductor rr2l6sdd Description: DIODE GEN PURP 600V 2A PMDS
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RRE02VS4SGTR RRE02VS4SGTR Rohm Semiconductor rre02vs4s.pdf Description: DIODE GEN PURP 400V 200MA TUMD2S
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RRE02VSM4STR RRE02VSM4STR Rohm Semiconductor datasheet?p=RRE02VSM4S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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RRE07VSM4STR RRE07VSM4STR Rohm Semiconductor rre07vsm4s.pdf Description: DIODE GP 400V 700MA TUMD2SM
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RS1E350BNTB RS1E350BNTB Rohm Semiconductor rs1e350bntb-e.pdf Description: MOSFET N-CH 30V 35A 8HSOP
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RS3E075ATTB RS3E075ATTB Rohm Semiconductor SOP8_TB_taping.pdf Description: MOSFET P-CH 30V 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP-J
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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RSA30LDDTE25 RSA30LDDTE25 Rohm Semiconductor rsa30l.pdf Description: TVS DIODE 25.6VWM 41.4VC PMDS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Supplier Device Package: PMDS
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Unidirectional Channels: 1
Produkt ist nicht verfügbar
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RSB6.8SMT2N RSB6.8SMT2N Rohm Semiconductor datasheet?p=RSB6.8SM&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TVS DIODE 3.5VWM EMD2
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RSH070N05GZETB RSH070N05GZETB Rohm Semiconductor rsh070n05-e.pdf Description: MOSFET N-CH 45V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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RSH070P05GZETB RSH070P05GZETB Rohm Semiconductor rsh070p05-e.pdf Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
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RSX201VAM30TR RSX201VAM30TR Rohm Semiconductor datasheet?p=RSX201VAM30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RUS100N02TB RUS100N02TB Rohm Semiconductor datasheet?p=RUS100N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
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BA12004BF-E2 BA12004BF-E2 Rohm Semiconductor ba12003xx-e.pdf Description: TRANS 7NPN DARL 60V 0.5A 16SOP
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BA2904WF-E2 BA2904WF-E2 Rohm Semiconductor ba10358-e.pdf Description: IC OP AMP GROUND SENSE SOP8
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BD48K38G-TL BD48K38G-TL Rohm Semiconductor bd48xxg-e.pdf Description: IC VOLTAGE SUPERVISOR 3SSOP
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BD49K26G-TL BD49K26G-TL Rohm Semiconductor bd48xxg-e.pdf Description: IC VOLTAGE DETECTOR SSOP3
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BD49K44G-TL BD49K44G-TL Rohm Semiconductor bd48xxg-e.pdf Description: IC VOLTAGE DETECTOR SSOP3
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BD65499MUV-E2 BD65499MUV-E2 Rohm Semiconductor bd65499muv-e.pdf Description: IC LENS DVR 1-2CH 28VQFN
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BD6962FVM-GTR BD6962FVM-GTR Rohm Semiconductor bd6962fvm-e.pdf Description: IC MOTOR DRIVER PWM 8-MSOP
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BD6966NUX-GE2 BD6966NUX-GE2 Rohm Semiconductor bd6966nux-e.pdf Description: IC PWM FAN MOTOR DVR 10VSON
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BD7673AG-GTR BD7673AG-GTR Rohm Semiconductor bd7673ag-e.pdf Description: IC PWM DC/DC CONVERTER 6SSOP
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BD7679G-GTR BD7679G-GTR Rohm Semiconductor bd7679g-e.pdf Description: IC PWM DC/DC CONVERTER 6SSOP
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BM1P065FJ-E2 BM1P065FJ-E2 Rohm Semiconductor bm1p065fj-e.pdf Description: IC PWM CTLR AD/DC SOP8
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BM1P068FJ-E2 BM1P068FJ-E2 Rohm Semiconductor bm1p068fj-e.pdf Description: IC PWM CTLR AD/DC SOP8
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BM2P052F-GE2 BM2P052F-GE2 Rohm Semiconductor bm2pxx2f-e.pdf Description: IC CONV DC/DC PWM 650V SOP8
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BM2P053F-GE2 BM2P053F-GE2 Rohm Semiconductor bm2pxx3f-e.pdf Description: IC CONV DC/DC PWM 650V SOP8
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BM5449MWV-E2 BM5449MWV-E2 Rohm Semiconductor bm5449mwv-e.pdf Description: IC SPEAKER AMP DGTL DSP 56UQFN
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RB162MM-30TR datasheet?p=RB162MM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB162MM-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A PMDU
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
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RB168L150TE25 rb168l150-e
RB168L150TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDS
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RB168L-40TE25 rb168l-40.pdf
RB168L-40TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDS
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RB168M150TR RB168M150.pdf
RB168M150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
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RB168MM-40TR datasheet?p=RB168MM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDU
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
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RB228NS100TL datasheet?p=RB228NS100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS100TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 100V 15A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RB425DFHT146 rb425dfht146-e
RB425DFHT146
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 50MA SMD3
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io) (per Diode): 50mA
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RB520CM-60T2R datasheet?p=RB520CM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520CM-60T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
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48+0.44 EUR
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123+0.17 EUR
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RB520CS-30T2RA datasheet?p=RB520CS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520CS-30T2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RB521AS-30T2R rb521as-30t2r-e
RB521AS-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA VML2
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RB521AS-40T2R rb521as-40.pdf
RB521AS-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA VML2
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RB521CS-30T2RA datasheet?p=RB521CS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30T2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: VMN2 (SOD-923)
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
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23+0.94 EUR
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RB530CM-60T2R datasheet?p=RB530CM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB530CM-60T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 100MAVMN2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 mA
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
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RB530VM-30TE-17 datasheet?p=RB530VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB530VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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RB531VM-40TE-17 rb531vm-40te-17-e
RB531VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
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RB550VAM-30TR datasheet?p=RB550VAM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550VAM-30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RB578VAM100TR datasheet?p=RB578VAM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB578VAM100TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 700MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
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RB886CST2RA rb886cst2ra-e.pdf
RB886CST2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 15V 10MA VMN2
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: VMN2 (SOD-923)
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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RBE05SM20AT2R rbe05sm20a.pdf
RBE05SM20AT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA EMD2
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RBE07V20ATE-17 rbe07v20a.pdf
RBE07V20ATE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD2
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RF01VM2STE-17 datasheet?p=RF01VM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF01VM2STE-17
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 250V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 250 V
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RF101L2SDDTE25 datasheet?p=RF101L2SDD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF101L2SDDTE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RF4E075ATTCR datasheet?p=RF4E075AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E075ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
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RFN3BM2SFHTL datasheet?p=RFN3BM2SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN3BM2SFHTL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RFN6BM2DTL rfn6bm2d-e
RFN6BM2DTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252
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RFNL5BM6STL rfnl5bm6s.pdf
RFNL5BM6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
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11+2.01 EUR
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RFU02VSM6STR datasheet?p=RFU02VSM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFU02VSM6STR
Hersteller: Rohm Semiconductor
Description: DIODE GP 600V 200MA TUMD2SM
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
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27+0.8 EUR
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RFUH10NS4STL rfuh10ns4s.pdf
RFUH10NS4STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 430V 10A LPDS
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RN242CST2RA rn242cs.pdf
RN242CST2RA
Hersteller: Rohm Semiconductor
Description: DIODE PIN HF SW 30V 100MA VMN2
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RQ3E180AJTB rq3e180ajtb-e.pdf
RQ3E180AJTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
auf Bestellung 10637 Stücke:
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RQ5E040AJTCL datasheet?p=RQ5E040AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E040AJTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 15 V
auf Bestellung 2912 Stücke:
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14+1.51 EUR
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RQ6E055BNTCR datasheet?p=RQ6E055BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E055BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 5.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 15 V
auf Bestellung 2950 Stücke:
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11+2.05 EUR
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RR2L4SDDTE25 rr2l4sdd
RR2L4SDDTE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 2A PMDS
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RR2L6SDDTE25 rr2l6sdd
RR2L6SDDTE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 2A PMDS
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RRE02VS4SGTR rre02vs4s.pdf
RRE02VS4SGTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 200MA TUMD2S
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RRE02VSM4STR datasheet?p=RRE02VSM4S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRE02VSM4STR
Hersteller: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: TUMD2SM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 17167 Stücke:
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RRE07VSM4STR rre07vsm4s.pdf
RRE07VSM4STR
Hersteller: Rohm Semiconductor
Description: DIODE GP 400V 700MA TUMD2SM
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RS1E350BNTB rs1e350bntb-e.pdf
RS1E350BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A 8HSOP
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RS3E075ATTB SOP8_TB_taping.pdf
RS3E075ATTB
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP-J
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 11173 Stücke:
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13+1.67 EUR
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RSA30LDDTE25 rsa30l.pdf
RSA30LDDTE25
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25.6VWM 41.4VC PMDS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Supplier Device Package: PMDS
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 14.4A (8/20µs)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Unidirectional Channels: 1
Produkt ist nicht verfügbar
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RSB6.8SMT2N datasheet?p=RSB6.8SM&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RSB6.8SMT2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD2
auf Bestellung 8529 Stücke:
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38+0.57 EUR
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RSH070N05GZETB rsh070n05-e.pdf
RSH070N05GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2200 Stücke:
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7+3.37 EUR
10+2.14 EUR
100+1.43 EUR
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RSH070P05GZETB rsh070p05-e.pdf
RSH070P05GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
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5+5.13 EUR
10+3.32 EUR
100+2.3 EUR
500+1.89 EUR
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RSX201VAM30TR datasheet?p=RSX201VAM30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSX201VAM30TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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44+0.48 EUR
88+0.24 EUR
108+0.19 EUR
500+0.15 EUR
1000+0.14 EUR
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RUS100N02TB datasheet?p=RUS100N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUS100N02TB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
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10+3.34 EUR
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BA12004BF-E2 ba12003xx-e.pdf
BA12004BF-E2
Hersteller: Rohm Semiconductor
Description: TRANS 7NPN DARL 60V 0.5A 16SOP
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BA2904WF-E2 ba10358-e.pdf
BA2904WF-E2
Hersteller: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE SOP8
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BD48K38G-TL bd48xxg-e.pdf
BD48K38G-TL
Hersteller: Rohm Semiconductor
Description: IC VOLTAGE SUPERVISOR 3SSOP
Produkt ist nicht verfügbar
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BD49K26G-TL bd48xxg-e.pdf
BD49K26G-TL
Hersteller: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
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BD49K44G-TL bd48xxg-e.pdf
BD49K44G-TL
Hersteller: Rohm Semiconductor
Description: IC VOLTAGE DETECTOR SSOP3
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BD65499MUV-E2 bd65499muv-e.pdf
BD65499MUV-E2
Hersteller: Rohm Semiconductor
Description: IC LENS DVR 1-2CH 28VQFN
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BD6962FVM-GTR bd6962fvm-e.pdf
BD6962FVM-GTR
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER PWM 8-MSOP
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BD6966NUX-GE2 bd6966nux-e.pdf
BD6966NUX-GE2
Hersteller: Rohm Semiconductor
Description: IC PWM FAN MOTOR DVR 10VSON
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BD7673AG-GTR bd7673ag-e.pdf
BD7673AG-GTR
Hersteller: Rohm Semiconductor
Description: IC PWM DC/DC CONVERTER 6SSOP
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BD7679G-GTR bd7679g-e.pdf
BD7679G-GTR
Hersteller: Rohm Semiconductor
Description: IC PWM DC/DC CONVERTER 6SSOP
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BM1P065FJ-E2 bm1p065fj-e.pdf
BM1P065FJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWM CTLR AD/DC SOP8
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BM1P068FJ-E2 bm1p068fj-e.pdf
BM1P068FJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWM CTLR AD/DC SOP8
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BM2P052F-GE2 bm2pxx2f-e.pdf
BM2P052F-GE2
Hersteller: Rohm Semiconductor
Description: IC CONV DC/DC PWM 650V SOP8
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BM2P053F-GE2 bm2pxx3f-e.pdf
BM2P053F-GE2
Hersteller: Rohm Semiconductor
Description: IC CONV DC/DC PWM 650V SOP8
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BM5449MWV-E2 bm5449mwv-e.pdf
BM5449MWV-E2
Hersteller: Rohm Semiconductor
Description: IC SPEAKER AMP DGTL DSP 56UQFN
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