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SDR03EZPF3901 SDR03EZPF3901 Rohm Semiconductor sdr-e.pdf Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
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124+0.17 EUR
183+0.11 EUR
215+0.098 EUR
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BM2P109TF-E2 BM2P109TF-E2 Rohm Semiconductor bm2p109tf-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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BM2P109TF-E2 BM2P109TF-E2 Rohm Semiconductor bm2p109tf-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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BD900N1G-CTR BD900N1G-CTR Rohm Semiconductor datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
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BD900N1G-CTR BD900N1G-CTR Rohm Semiconductor datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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SFR18EZPJ470 SFR18EZPJ470 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ470 SFR18EZPJ470 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ131 SFR18EZPJ131 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPJ131 SFR18EZPJ131 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
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SFR18EZPJ3R3 SFR18EZPJ3R3 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ3R3 SFR18EZPJ3R3 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPF1200 SFR18EZPF1200 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPF1200 SFR18EZPF1200 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
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SFR18EZPJ331 SFR18EZPJ331 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
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SFR18EZPJ331 SFR18EZPJ331 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
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BR24T32FVJ-WE2 BR24T32FVJ-WE2 Rohm Semiconductor datasheet?p=BR24T32FVJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24T32FVT-WE2 BR24T32FVT-WE2 Rohm Semiconductor datasheet?p=BR24T32FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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RW4E045AJTCL1 RW4E045AJTCL1 Rohm Semiconductor datasheet?p=RW4E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN1616-7T
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RW4E045ATTCL1 RW4E045ATTCL1 Rohm Semiconductor datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -4.5A POWER MOSFET. RW4
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
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RW4E045ATTCL1 RW4E045ATTCL1 Rohm Semiconductor datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
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R8008ANJGTL R8008ANJGTL Rohm Semiconductor datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R8008ANJGTL R8008ANJGTL Rohm Semiconductor datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R8003KNXC7G R8003KNXC7G Rohm Semiconductor datasheet?p=R8003KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 800V 3A, TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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R8002KNXC7G R8002KNXC7G Rohm Semiconductor datasheet?p=R8002KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 800V 1.6A, TO-220FM, HIGH-SPEED
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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R8006KNXC7G R8006KNXC7G Rohm Semiconductor datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
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R8006KNXC7G R8006KNXC7G Rohm Semiconductor datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
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R8002KND3TL1 R8002KND3TL1 Rohm Semiconductor datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-252GE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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R8002KND3TL1 R8002KND3TL1 Rohm Semiconductor datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 1.
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252GE
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
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R8009KNXC7G R8009KNXC7G Rohm Semiconductor datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8009KNXC7G R8009KNXC7G Rohm Semiconductor datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8003KND3TL1 R8003KND3TL1 Rohm Semiconductor datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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R8003KND3TL1 R8003KND3TL1 Rohm Semiconductor datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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RSS070P05HZGTB RSS070P05HZGTB Rohm Semiconductor rss070p05hzgtb-e.pdf Description: PCH -45V -7A POWER MOSFET. RSS07
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
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RSS070P05HZGTB RSS070P05HZGTB Rohm Semiconductor rss070p05hzgtb-e.pdf Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
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RGTV80TS65GC11 RGTV80TS65GC11 Rohm Semiconductor datasheet?p=RGTV80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 78A TO-247N
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
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RGTV80TK65GVC11 RGTV80TK65GVC11 Rohm Semiconductor datasheet?p=RGTV80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 85 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
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BD7800FP-E2 BD7800FP-E2 Rohm Semiconductor Description: IC REG LINEAR 5A
Produkt ist nicht verfügbar
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BZX84C3V0LYFHT116 BZX84C3V0LYFHT116 Rohm Semiconductor datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C3V0LYFHT116 BZX84C3V0LYFHT116 Rohm Semiconductor datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
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40+0.52 EUR
60+0.35 EUR
125+0.17 EUR
1000+0.15 EUR
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SML-P12MTT86 SML-P12MTT86 Rohm Semiconductor sml-p1-e.pdf Description: LED GREEN CLEAR 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.25mm
Wavelength - Dominant: 572nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Not For New Designs
Lens Style: Square with Flat Top
Lens Size: 0.60mm
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42+0.51 EUR
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500+0.3 EUR
1000+0.27 EUR
2000+0.25 EUR
5000+0.24 EUR
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MMBZ27VCLYFHT116 MMBZ27VCLYFHT116 Rohm Semiconductor datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MMBZ27VCLYFHT116 MMBZ27VCLYFHT116 Rohm Semiconductor datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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500+0.4 EUR
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BUS1DJC3GWZ-E2 BUS1DJC3GWZ-E2 Rohm Semiconductor datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BUS1DJC3GWZ-E2 BUS1DJC3GWZ-E2 Rohm Semiconductor datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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SDR10EZPJ360 SDR10EZPJ360 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
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SDR10EZPJ360 SDR10EZPJ360 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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SDR10EZPJ132 SDR10EZPJ132 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR10EZPJ132 SDR10EZPJ132 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDR10EZPJ1R0 SDR10EZPJ1R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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5000+0.048 EUR
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SDR10EZPJ1R0 SDR10EZPJ1R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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50+0.42 EUR
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SDR03EZPD8062 SDR03EZPD8062 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD8062 SDR03EZPD8062 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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57+0.37 EUR
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SDR03EZPD5112 SDR03EZPD5112 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.062 EUR
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SDR03EZPD5112 SDR03EZPD5112 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR03EZPD3000 SDR03EZPD3000 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
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SDR03EZPD3000 SDR03EZPD3000 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
auf Bestellung 9367 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR10EZPF1R60 SDR10EZPF1R60 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
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5000+0.07 EUR
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SDR10EZPF1R60 SDR10EZPF1R60 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
auf Bestellung 9570 Stücke:
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35+0.61 EUR
41+0.51 EUR
78+0.27 EUR
105+0.2 EUR
500+0.12 EUR
1000+0.083 EUR
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BD63525AEFV-EVK-001 BD63525AEFV-EVK-001 Rohm Semiconductor bd63xxxefv-evk-001_ug-e.pdf Description: EVAL BOARD FOR BD63525A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63525A
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
auf Bestellung 5 Stücke:
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1+259.37 EUR
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RS1E350GNTB RS1E350GNTB Rohm Semiconductor datasheet?p=RS1E350GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+2.44 EUR
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SDR03EZPF3901 sdr-e.pdf
SDR03EZPF3901
Hersteller: Rohm Semiconductor
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
auf Bestellung 1666 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
124+0.17 EUR
183+0.11 EUR
215+0.098 EUR
500+0.07 EUR
1000+0.062 EUR
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BM2P109TF-E2 bm2p109tf-e.pdf
BM2P109TF-E2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.8 EUR
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BM2P109TF-E2 bm2p109tf-e.pdf
BM2P109TF-E2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
auf Bestellung 4922 Stücke:
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AnzahlPrivatkunde
6+3.75 EUR
10+3.37 EUR
25+3.18 EUR
100+2.71 EUR
250+2.55 EUR
500+2.23 EUR
1000+1.84 EUR
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BD900N1G-CTR datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD900N1G-CTR
Hersteller: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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BD900N1G-CTR datasheet?p=BD900N1G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD900N1G-CTR
Hersteller: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 2894 Stücke:
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9+2.48 EUR
10+2.21 EUR
25+2.09 EUR
100+1.73 EUR
250+1.61 EUR
500+1.43 EUR
1000+1.13 EUR
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SFR18EZPJ470 sfr-e.pdf
SFR18EZPJ470
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.037 EUR
10000+0.035 EUR
Mindestbestellmenge: 5000 Stücke
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SFR18EZPJ470 sfr-e.pdf
SFR18EZPJ470
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
77+0.27 EUR
198+0.11 EUR
1000+0.044 EUR
2500+0.04 EUR
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SFR18EZPJ131 sfr-e.pdf
SFR18EZPJ131
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
5000+0.042 EUR
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SFR18EZPJ131 sfr-e.pdf
SFR18EZPJ131
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
auf Bestellung 9890 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
70+0.3 EUR
177+0.12 EUR
1000+0.05 EUR
2500+0.045 EUR
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SFR18EZPJ3R3 sfr-e.pdf
SFR18EZPJ3R3
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.037 EUR
10000+0.035 EUR
Mindestbestellmenge: 5000 Stücke
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SFR18EZPJ3R3 sfr-e.pdf
SFR18EZPJ3R3
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
77+0.27 EUR
198+0.11 EUR
1000+0.044 EUR
2500+0.04 EUR
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SFR18EZPF1200 sfr-e.pdf
SFR18EZPF1200
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.057 EUR
10000+0.054 EUR
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SFR18EZPF1200 sfr-e.pdf
SFR18EZPF1200
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
50+0.42 EUR
128+0.17 EUR
1000+0.069 EUR
2500+0.063 EUR
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SFR18EZPJ331 sfr-e.pdf
SFR18EZPJ331
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
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AnzahlPrivatkunde
5000+0.043 EUR
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SFR18EZPJ331 sfr-e.pdf
SFR18EZPJ331
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
auf Bestellung 7932 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
66+0.32 EUR
169+0.12 EUR
1000+0.052 EUR
2500+0.048 EUR
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BR24T32FVJ-WE2 datasheet?p=BR24T32FVJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T32FVJ-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24T32FVT-WE2 datasheet?p=BR24T32FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T32FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RW4E045AJTCL1 datasheet?p=RW4E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW4E045AJTCL1
Hersteller: Rohm Semiconductor
Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN1616-7T
Produkt ist nicht verfügbar
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RW4E045ATTCL1 datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW4E045ATTCL1
Hersteller: Rohm Semiconductor
Description: PCH -30V -4.5A POWER MOSFET. RW4
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RW4E045ATTCL1 datasheet?p=RW4E045AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW4E045ATTCL1
Hersteller: Rohm Semiconductor
Description: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
auf Bestellung 2940 Stücke:
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AnzahlPrivatkunde
9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.76 EUR
1000+0.69 EUR
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R8008ANJGTL datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJGTL
Hersteller: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R8008ANJGTL datasheet?p=R8008ANJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJGTL
Hersteller: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R8003KNXC7G datasheet?p=R8003KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8003KNXC7G
Hersteller: Rohm Semiconductor
Description: 800V 3A, TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
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R8002KNXC7G datasheet?p=R8002KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002KNXC7G
Hersteller: Rohm Semiconductor
Description: 800V 1.6A, TO-220FM, HIGH-SPEED
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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R8006KNXC7G datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8006KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Produkt ist nicht verfügbar
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R8006KNXC7G datasheet?p=R8006KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8006KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 452 Stücke:
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R8002KND3TL1 datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-252GE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Produkt ist nicht verfügbar
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R8002KND3TL1 datasheet?p=R8002KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252GE
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
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R8009KNXC7G datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8009KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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R8009KNXC7G datasheet?p=R8009KNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8009KNXC7G
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
auf Bestellung 1561 Stücke:
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R8003KND3TL1 datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8003KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
Produkt ist nicht verfügbar
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R8003KND3TL1 datasheet?p=R8003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8003KND3TL1
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
auf Bestellung 678 Stücke:
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RSS070P05HZGTB rss070p05hzgtb-e.pdf
RSS070P05HZGTB
Hersteller: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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RSS070P05HZGTB rss070p05hzgtb-e.pdf
RSS070P05HZGTB
Hersteller: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4563 Stücke:
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RGTV80TS65GC11 datasheet?p=RGTV80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV80TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 78A TO-247N
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
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RGTV80TK65GVC11 datasheet?p=RGTV80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV80TK65GVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 85 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
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BD7800FP-E2
BD7800FP-E2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5A
Produkt ist nicht verfügbar
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BZX84C3V0LYFHT116 datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V0LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C3V0LYFHT116 datasheet?p=BZX84C3V0LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V0LYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 1197 Stücke:
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60+0.35 EUR
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SML-P12MTT86 sml-p1-e.pdf
SML-P12MTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 25mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.25mm
Wavelength - Dominant: 572nm
Supplier Device Package: 1006 (0402)
Lens Transparency: Clear
Part Status: Not For New Designs
Lens Style: Square with Flat Top
Lens Size: 0.60mm
auf Bestellung 11018 Stücke:
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29+0.74 EUR
42+0.51 EUR
100+0.36 EUR
500+0.3 EUR
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2000+0.25 EUR
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MMBZ27VCLYFHT116 datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VCLYFHT116
Hersteller: Rohm Semiconductor
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
3000+0.3 EUR
6000+0.29 EUR
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MMBZ27VCLYFHT116 datasheet?p=MMBZ27VCLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ27VCLYFHT116
Hersteller: Rohm Semiconductor
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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AnzahlPrivatkunde
24+0.88 EUR
28+0.75 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.33 EUR
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BUS1DJC3GWZ-E2 datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BUS1DJC3GWZ-E2
Hersteller: Rohm Semiconductor
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BUS1DJC3GWZ-E2 datasheet?p=BUS1DJC3GWZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BUS1DJC3GWZ-E2
Hersteller: Rohm Semiconductor
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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SDR10EZPJ360 sdr-e.pdf
SDR10EZPJ360
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
auf Bestellung 10000 Stücke:
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5000+0.054 EUR
10000+0.05 EUR
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SDR10EZPJ360 sdr-e.pdf
SDR10EZPJ360
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 36 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
53+0.39 EUR
101+0.21 EUR
136+0.15 EUR
500+0.094 EUR
1000+0.064 EUR
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SDR10EZPJ132 sdr-e.pdf
SDR10EZPJ132
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR10EZPJ132 sdr-e.pdf
SDR10EZPJ132
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 1.3 kOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDR10EZPJ1R0 sdr-e.pdf
SDR10EZPJ1R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.048 EUR
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SDR10EZPJ1R0 sdr-e.pdf
SDR10EZPJ1R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 9675 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
61+0.35 EUR
156+0.13 EUR
1000+0.057 EUR
2500+0.052 EUR
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SDR03EZPD8062 sdr-e.pdf
SDR03EZPD8062
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.05 EUR
10000+0.048 EUR
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SDR03EZPD8062 sdr-e.pdf
SDR03EZPD8062
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
57+0.37 EUR
145+0.14 EUR
1000+0.061 EUR
2500+0.056 EUR
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SDR03EZPD5112 sdr-e.pdf
SDR03EZPD5112
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
auf Bestellung 5000 Stücke:
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5000+0.062 EUR
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SDR03EZPD5112 sdr-e.pdf
SDR03EZPD5112
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51.1 kOhms
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR03EZPD3000 sdr-e.pdf
SDR03EZPD3000
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.062 EUR
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SDR03EZPD3000 sdr-e.pdf
SDR03EZPD3000
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 300 Ohms
auf Bestellung 9367 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
102+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
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SDR10EZPF1R60 sdr-e.pdf
SDR10EZPF1R60
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.07 EUR
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SDR10EZPF1R60 sdr-e.pdf
SDR10EZPF1R60
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.6 Ohms
auf Bestellung 9570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
41+0.51 EUR
78+0.27 EUR
105+0.2 EUR
500+0.12 EUR
1000+0.083 EUR
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BD63525AEFV-EVK-001 bd63xxxefv-evk-001_ug-e.pdf
BD63525AEFV-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD63525A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63525A
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
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AnzahlPrivatkunde
1+259.37 EUR
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RS1E350GNTB datasheet?p=RS1E350GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E350GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 35A/80A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+2.44 EUR
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