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BR25H128FJ-5ACE2 BR25H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR25H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BR25H128F-2LBH2 BR25H128F-2LBH2 Rohm Semiconductor datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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BR25H128F-2LBH2 BR25H128F-2LBH2 Rohm Semiconductor datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT SPI 8SOP
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
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BR24H128F-5ACE2 BR24H128F-5ACE2 Rohm Semiconductor br24h256xxx-5ac-e.pdf Description: 125 OPERATION IC BUS EEPROM FOR
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BR24H128FJ-5ACE2 BR24H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FJ-5ACE2 BR24H128FJ-5ACE2 Rohm Semiconductor datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FVM-5ACTR BR24H128FVM-5ACTR Rohm Semiconductor datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FVM-5ACTR BR24H128FVM-5ACTR Rohm Semiconductor datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 BR35H128F-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 BR35H128F-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 BR35H128FJ-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 BR35H128FJ-WCE2 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DTA043XUBTL DTA043XUBTL Rohm Semiconductor datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
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DTA043XUBTL DTA043XUBTL Rohm Semiconductor datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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DTA044TMT2L DTA044TMT2L Rohm Semiconductor datasheet?p=DTA044TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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DTA044TEBTL DTA044TEBTL Rohm Semiconductor datasheet?p=DTA044TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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DTA143ZEFRATL DTA143ZEFRATL Rohm Semiconductor datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA143ZEFRATL DTA143ZEFRATL Rohm Semiconductor datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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RN731VFHTE-17 RN731VFHTE-17 Rohm Semiconductor Taping_USH_TE17-e.pdf Description: RF DIODE PIN 50V UMD2
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RN731VFHTE-17 RN731VFHTE-17 Rohm Semiconductor Taping_USH_TE17-e.pdf Description: RF DIODE PIN 50V UMD2
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BD7694FJ-E2 BD7694FJ-E2 Rohm Semiconductor datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BD7694FJ-E2 BD7694FJ-E2 Rohm Semiconductor datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SMLA12ENTT86 SMLA12ENTT86 Rohm Semiconductor datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SMLA12ENTT86 SMLA12ENTT86 Rohm Semiconductor datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN 1611 SMD R/A
Height (Max): 0.65mm
Current - Test: 5mA
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 140mcd
Mounting Type: Surface Mount, Right Angle
Size / Dimension: 1.60mm L x 1.15mm W
Color: Green
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.20mm x 0.55mm
Lens Style: Rectangle with Flat Top
Supplier Device Package: 1611(0605)
Wavelength - Dominant: 527nm
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SP8M21HZGTB SP8M21HZGTB Rohm Semiconductor datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8M21HZGTB SP8M21HZGTB Rohm Semiconductor datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 6A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SP8M41HZGTB SP8M41HZGTB Rohm Semiconductor datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SP8M41HZGTB SP8M41HZGTB Rohm Semiconductor datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SP8M51HZGTB SP8M51HZGTB Rohm Semiconductor datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 3A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SP8M51HZGTB SP8M51HZGTB Rohm Semiconductor datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 3A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOP
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SP8M24HZGTB SP8M24HZGTB Rohm Semiconductor datasheet?p=SP8M24HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 4.5A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RR274EA-400FHTR RR274EA-400FHTR Rohm Semiconductor datasheet?p=RR274EA-400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SCS230AE2GC11 SCS230AE2GC11 Rohm Semiconductor datasheet?p=SCS230AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 650V 15A TO-247N
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
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SCS220AGC17 SCS220AGC17 Rohm Semiconductor datasheet?p=SCS220AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 650V 20A TO220ACFP
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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SCS212AGC17 SCS212AGC17 Rohm Semiconductor datasheet?p=SCS212AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
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SCS220KGC17 SCS220KGC17 Rohm Semiconductor datasheet?p=SCS220KG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIC 1.2KV 20A TO220ACFP
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
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SCS220KE2GC11 SCS220KE2GC11 Rohm Semiconductor datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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SCS230KE2GC11 SCS230KE2GC11 Rohm Semiconductor datasheet?p=SCS230KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SIC 1200V 15A TO-247N
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SCS220AE2GC11 SCS220AE2GC11 Rohm Semiconductor datasheet?p=SCS220AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SIC 650V 10A TO-247N
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SCS220AEGC11 SCS220AEGC11 Rohm Semiconductor datasheet?p=SCS220AE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SDR03EZPD4223 SDR03EZPD4223 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4223 SDR03EZPD4223 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SML522BUNWT86 SML522BUNWT86 Rohm Semiconductor datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
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SML522BUNWT86 SML522BUNWT86 Rohm Semiconductor datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE/RED DIFFUSED SMD
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
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RQ6E045SNTR RQ6E045SNTR Rohm Semiconductor datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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RQ6E045SNTR RQ6E045SNTR Rohm Semiconductor datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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SH8K39GZETB SH8K39GZETB Rohm Semiconductor datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
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SH8K39GZETB SH8K39GZETB Rohm Semiconductor datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
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SFR03EZPF1212 SFR03EZPF1212 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPF1212 SFR03EZPF1212 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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BD50GC0MEFJ-LBH2 BD50GC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD50GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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BD50GC0MEFJ-LBH2 BD50GC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD50GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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BD50HC0MEFJ-LBH2 BD50HC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD50HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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BD50HC0MEFJ-LBH2 BD50HC0MEFJ-LBH2 Rohm Semiconductor datasheet?p=BD50HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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RFN20TF6SC9 RFN20TF6SC9 Rohm Semiconductor datasheet?p=RFN20TF6S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE STANDARD 600V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SFR18EZPJ560 SFR18EZPJ560 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 56 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPJ560 SFR18EZPJ560 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 Ohms
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SFR18EZPF56R0 SFR18EZPF56R0 Rohm Semiconductor sfr-e.pdf Description: RES SMD 56 OHM 1% 1/4W 1206
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BSS84WAHZGT106 BSS84WAHZGT106 Rohm Semiconductor datasheet?p=BSS84WAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Qualification: AEC-Q101
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BSS84WAHZGT106 BSS84WAHZGT106 Rohm Semiconductor datasheet?p=BSS84WAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Qualification: AEC-Q101
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BR25H128FJ-5ACE2 datasheet?p=BR25H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BR25H128F-2LBH2 datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128F-2LBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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BR25H128F-2LBH2 datasheet?p=BR25H128F-2LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR25H128F-2LBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
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BR24H128F-5ACE2 br24h256xxx-5ac-e.pdf
BR24H128F-5ACE2
Hersteller: Rohm Semiconductor
Description: 125 OPERATION IC BUS EEPROM FOR
Produkt ist nicht verfügbar
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BR24H128FJ-5ACE2 datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FJ-5ACE2 datasheet?p=BR24H128FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FVM-5ACTR datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FVM-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR24H128FVM-5ACTR datasheet?p=BR24H128FVM-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H128FVM-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 SiC_SCS_AECQ.pdf
BR35H128F-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128F-WCE2 SiC_SCS_AECQ.pdf
BR35H128F-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BR35H128FJ-WCE2 SiC_SCS_AECQ.pdf
BR35H128FJ-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BR35H128FJ-WCE2 SiC_SCS_AECQ.pdf
BR35H128FJ-WCE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DTA043XUBTL datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA043XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
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DTA043XUBTL datasheet?p=DTA043XUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA043XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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DTA044TMT2L datasheet?p=DTA044TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA044TMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
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DTA044TEBTL datasheet?p=DTA044TEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA044TEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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DTA143ZEFRATL datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZEFRATL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA143ZEFRATL datasheet?p=DTA143ZEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZEFRATL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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152+0.14 EUR
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RN731VFHTE-17 Taping_USH_TE17-e.pdf
RN731VFHTE-17
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Produkt ist nicht verfügbar
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RN731VFHTE-17 Taping_USH_TE17-e.pdf
RN731VFHTE-17
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Produkt ist nicht verfügbar
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BD7694FJ-E2 datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7694FJ-E2
Hersteller: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD7694FJ-E2 datasheet?p=BD7694FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7694FJ-E2
Hersteller: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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25+1.02 EUR
100+0.89 EUR
250+0.83 EUR
500+0.8 EUR
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SMLA12ENTT86 datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLA12ENTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
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SMLA12ENTT86 datasheet?p=SMLA12ENT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLA12ENTT86
Hersteller: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Height (Max): 0.65mm
Current - Test: 5mA
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 140mcd
Mounting Type: Surface Mount, Right Angle
Size / Dimension: 1.60mm L x 1.15mm W
Color: Green
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.20mm x 0.55mm
Lens Style: Rectangle with Flat Top
Supplier Device Package: 1611(0605)
Wavelength - Dominant: 527nm
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SP8M21HZGTB datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SP8M21HZGTB datasheet?p=SP8M21HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SP8M41HZGTB datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M41HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SP8M41HZGTB datasheet?p=SP8M41HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M41HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1889 Stücke:
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SP8M51HZGTB datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M51HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SP8M51HZGTB datasheet?p=SP8M51HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M51HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOP
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SP8M24HZGTB datasheet?p=SP8M24HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M24HZGTB
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RR274EA-400FHTR datasheet?p=RR274EA-400FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RR274EA-400FHTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SCS230AE2GC11 datasheet?p=SCS230AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS230AE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247N
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
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SCS220AGC17 datasheet?p=SCS220AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 20A TO220ACFP
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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SCS212AGC17 datasheet?p=SCS212AG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS212AGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
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SCS220KGC17 datasheet?p=SCS220KG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KGC17
Hersteller: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
auf Bestellung 390 Stücke:
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1+29.01 EUR
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SCS220KE2GC11 datasheet?p=SCS220KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220KE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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SCS230KE2GC11 datasheet?p=SCS230KE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS230KE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 15A TO-247N
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SCS220AE2GC11 datasheet?p=SCS220AE2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AE2GC11
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247N
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SCS220AEGC11 datasheet?p=SCS220AE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS220AEGC11
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SDR03EZPD4223 sdr-e.pdf
SDR03EZPD4223
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD4223 sdr-e.pdf
SDR03EZPD4223
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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SML522BUNWT86 datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML522BUNWT86
Hersteller: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
Produkt ist nicht verfügbar
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SML522BUNWT86 datasheet?p=SML522BUNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SML522BUNWT86
Hersteller: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
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RQ6E045SNTR datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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RQ6E045SNTR datasheet?p=RQ6E045SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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SH8K39GZETB datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K39GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SH8K39GZETB datasheet?p=SH8K39&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K39GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
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SFR03EZPF1212 sfr-e.pdf
SFR03EZPF1212
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPF1212 sfr-e.pdf
SFR03EZPF1212
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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BD50GC0MEFJ-LBH2 datasheet?p=BD50GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD50GC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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BD50GC0MEFJ-LBH2 datasheet?p=BD50GC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD50GC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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BD50HC0MEFJ-LBH2 datasheet?p=BD50HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD50HC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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BD50HC0MEFJ-LBH2 datasheet?p=BD50HC0MEFJ-LB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD50HC0MEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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RFN20TF6SC9 datasheet?p=RFN20TF6S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RFN20TF6SC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SFR18EZPJ560 sfr-e.pdf
SFR18EZPJ560
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 56 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
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SFR18EZPJ560 sfr-e.pdf
SFR18EZPJ560
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 Ohms
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SFR18EZPF56R0 sfr-e.pdf
SFR18EZPF56R0
Hersteller: Rohm Semiconductor
Description: RES SMD 56 OHM 1% 1/4W 1206
Produkt ist nicht verfügbar
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BSS84WAHZGT106 datasheet?p=BSS84WAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS84WAHZGT106
Hersteller: Rohm Semiconductor
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Qualification: AEC-Q101
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BSS84WAHZGT106 datasheet?p=BSS84WAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS84WAHZGT106
Hersteller: Rohm Semiconductor
Description: PCH -60V -0.21A, SOT-323, SMALL
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Qualification: AEC-Q101
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