Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103515) > Seite 900 nach 1726
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DTA124XCAHZGT116 | Rohm Semiconductor |
Description: PNP -100MA -50V DIGITAL TRANSISTPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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DTA124XCAHZGT116 | Rohm Semiconductor |
Description: PNP -100MA -50V DIGITAL TRANSISTPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA114TUAT106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3 |
Produkt ist nicht verfügbar |
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ESR10EZPJ115 | Rohm Semiconductor |
Description: RES 1.1M OHM 5% 2/5W 0805Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±5% Power (Watts): 0.4W, 2/5W Packaging: Cut Tape (CT) Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Resistance: 1.1 MOhms Part Status: Active |
auf Bestellung 8325 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR10EZPJ515 | Rohm Semiconductor |
Description: RES SMD 5.1M OHM 5% 0.4W 0805Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±5% Power (Watts): 0.4W, 2/5W Packaging: Cut Tape (CT) Resistance: 5.1 mOhms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film |
auf Bestellung 5189 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P130SPFRATL | Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P130SPFRATL | Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252Qualification: AEC-Q101 Grade: Automotive Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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RN141CMT2R | Rohm Semiconductor |
Description: PIN DIODE 50V 100MA VMN2MVoltage - Peak Reverse (Max): 50V Resistance @ If, F: 2Ohm @ 3mA, 100MHz Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - Single Package / Case: SOD-923 Packaging: Tape & Reel (TR) Current - Max: 100 mA Part Status: Active |
Produkt ist nicht verfügbar |
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R6004KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 4A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C22VLYFHT116 | Rohm Semiconductor |
Description: 250MW, 22V, SOT-23, AUTOMOTIVE ZQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 15 V Power - Max: 250 mW Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5.68% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BZX84C22VLYFHT116 | Rohm Semiconductor |
Description: 250MW, 22V, SOT-23, AUTOMOTIVE ZQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 15 V Power - Max: 250 mW Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5.68% Packaging: Cut Tape (CT) |
auf Bestellung 2793 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C22VLYT116 | Rohm Semiconductor |
Description: DIODE ZENER 22V 250MW SOT23Tolerance: ±5.68% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 56 Ohms Supplier Device Package: SOT-23 Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
Produkt ist nicht verfügbar |
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BZX84C22VLYT116 | Rohm Semiconductor |
Description: DIODE ZENER 22V 250MW SOT23Tolerance: ±5.68% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 56 Ohms Supplier Device Package: SOT-23 Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
auf Bestellung 2888 Stücke: Lieferzeit 10-14 Tag (e) |
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RLD94PZJ5-00A | Rohm Semiconductor |
Description: RLD94PZJ5 IS 940NM MULTI MODE LAPart Status: Active Voltage - Input: 2.7V Current Rating (Amps): 370mA Wavelength: 942nm Package / Case: Radial, Can - 3 Lead Power (Watts): 285mW Packaging: Tray |
auf Bestellung 375 Stücke: Lieferzeit 10-14 Tag (e) |
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VS100VLNVWMTR | Rohm Semiconductor |
Description: 100V 200W, COMPACT AND HIGHLY REApplications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 162V Voltage - Breakdown (Min): 114V Unidirectional Channels: 1 Supplier Device Package: PMDE Voltage - Reverse Standoff (Typ): 100V Current - Peak Pulse (10/1000µs): 1.2A |
Produkt ist nicht verfügbar |
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VS100VLNVWMTR | Rohm Semiconductor |
Description: 100V 200W, COMPACT AND HIGHLY REPart Status: Active Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 162V Voltage - Breakdown (Min): 114V Unidirectional Channels: 1 Supplier Device Package: PMDE Voltage - Reverse Standoff (Typ): 100V Current - Peak Pulse (10/1000µs): 1.2A Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 3968 Stücke: Lieferzeit 10-14 Tag (e) |
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VS100VLNVWMTFTR | Rohm Semiconductor |
Description: 100V 200W, COMPACT AND HIGHLY REPart Status: Active Power Line Protection: No Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 162V Voltage - Breakdown (Min): 114V Unidirectional Channels: 1 Supplier Device Package: PMDE Voltage - Reverse Standoff (Typ): 100V (Max) Current - Peak Pulse (10/1000µs): 1.2A Applications: General Purpose |
Produkt ist nicht verfügbar |
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BD49E42G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 5-SSOP Voltage - Threshold: 4.2V Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 105°C (TA) Reset: Active Low Type: Voltage Detector Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BD49E42G-MTR | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 5SSOPQualification: AEC-Q100 Grade: Automotive Type: Voltage Detector Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 5-SSOP Voltage - Threshold: 4.2V Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 105°C (TA) Reset: Active Low |
Produkt ist nicht verfügbar |
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BD52W01G-CTR | Rohm Semiconductor |
Description: NANO ENERGY, FREE TIME DELAY SETQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 6-SSOP Voltage - Threshold: 1.32V Reset Timeout: 27.7ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active Low Type: Voltage Detector Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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SCT4013DRC15 | Rohm Semiconductor |
Description: 750V, 13M, 4-PIN THD, TRENCH-STRPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Power Dissipation (Max): 312W Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V |
Produkt ist nicht verfügbar |
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SML-D13Y8WT86 | Rohm Semiconductor |
Description: LED YELLOW 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 100mcd Voltage - Forward (Vf) (Typ): 2.2V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 590nm Supplier Device Package: 0603 Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-D13U8WT86 | Rohm Semiconductor |
Description: LED RED 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Red Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 70mcd Voltage - Forward (Vf) (Typ): 2.2V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 620nm Supplier Device Package: 0603 Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BR25H256FVT-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 32K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 3.5ms Part Status: Active Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BR24G512FVT-5AE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 3.5ms Part Status: Active Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24T512F-3AME2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 64K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BR24T512F-3AME2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 64K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24T512FJ-3AME2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJMemory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 64K x 8 |
Produkt ist nicht verfügbar |
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BR24T512FJ-3AME2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 64K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2097 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SST3Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SST3 DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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RB088T100NZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOT 100V 10A TO220FNCurrent - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-D12Y3WT86 | Rohm Semiconductor |
Description: LED YELLOW 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 40mcd Voltage - Forward (Vf) (Typ): 2.2V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 581nm Supplier Device Package: 0603 Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
Produkt ist nicht verfügbar |
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SCT4062KW7HRTL | Rohm Semiconductor |
Description: 1200V, 24A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Power Dissipation (Max): 93W Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4062KW7HRTL | Rohm Semiconductor |
Description: 1200V, 24A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Power Dissipation (Max): 93W Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2669 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4036KW7HRTL | Rohm Semiconductor | Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST |
Produkt ist nicht verfügbar |
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SCT4036KW7HRTL | Rohm Semiconductor | Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST |
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SDR03EZPD3601 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPResistance: 3.6 kOhms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±0.5% Power (Watts): 0.3W Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SDR03EZPD3601 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPResistance: 3.6 kOhms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±0.5% Power (Watts): 0.3W Packaging: Cut Tape (CT) |
auf Bestellung 9944 Stücke: Lieferzeit 10-14 Tag (e) |
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BD9408FV-E2 | Rohm Semiconductor |
Description: IC LED DRIVER RGLTR PWM 14SSOPPart Status: Active Voltage - Supply (Max): 35V Voltage - Supply (Min): 9V Dimming: Analog, PWM Supplier Device Package: 14-SSOP-B Topology: Step-Up (Boost) Internal Switch(s): Yes Applications: Backlight Operating Temperature: -40°C ~ 105°C Type: DC DC Regulator Frequency: 50kHz ~ 2MHz Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 14-LSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BD9408FV-E2 | Rohm Semiconductor |
Description: IC LED DRIVER RGLTR PWM 14SSOPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 50kHz ~ 2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 105°C Applications: Backlight Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 14-SSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 9V Voltage - Supply (Max): 35V Part Status: Active |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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| ML610Q172-012GAZWAX | Rohm Semiconductor |
Description: IC |
Produkt ist nicht verfügbar |
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| ML610Q172-012GAZWAAL | Rohm Semiconductor |
Description: IC |
Produkt ist nicht verfügbar |
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DAN235FMT106 | Rohm Semiconductor |
Description: DIODE STANDARD 35V 200MW SOT323Qualification: AEC-Q101 Power Dissipation (Max): 200 mW Grade: Automotive Supplier Device Package: SOT-323 Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 900mOhm @ 2mA, 100MHz Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Standard - 1 Pair Common Cathode Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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DAN235FMT106 | Rohm Semiconductor |
Description: DIODE STANDARD 35V 200MW SOT323Qualification: AEC-Q101 Power Dissipation (Max): 200 mW Grade: Automotive Supplier Device Package: SOT-323 Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 900mOhm @ 2mA, 100MHz Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Standard - 1 Pair Common Cathode Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 2687 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3L03BATTL1 | Rohm Semiconductor |
Description: PCH -60V -35A POWER MOSFET - RD3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3L03BATTL1 | Rohm Semiconductor |
Description: PCH -60V -35A POWER MOSFET - RD3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V |
auf Bestellung 4586 Stücke: Lieferzeit 10-14 Tag (e) |
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RB088LAM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 5A PMDTMCurrent - Reverse Leakage @ Vr: 3.6 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C Supplier Device Package: PMDTM Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB088LAM-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 5A PMDTMCurrent - Reverse Leakage @ Vr: 3.6 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C Supplier Device Package: PMDTM Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 1411 Stücke: Lieferzeit 10-14 Tag (e) |
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RR2LAM4STR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 2A PMDTMPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RR2LAM4STR | Rohm Semiconductor |
Description: DIODE STANDARD 400V 2A PMDTMPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 5926 Stücke: Lieferzeit 10-14 Tag (e) |
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RB088LAM-40TFTR | Rohm Semiconductor |
Description: SUPER LOW IR, 40V, 5A, SOD-128, |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB160LAM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A PMDTMQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB160LAM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A PMDTMGrade: Automotive Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
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RR1LAM4STFTR | Rohm Semiconductor |
Description: RECTIFYING DIODE (AEC-Q101 QUALI |
Produkt ist nicht verfügbar |
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RR1LAM4STFTR | Rohm Semiconductor |
Description: RECTIFYING DIODE (AEC-Q101 QUALI |
Produkt ist nicht verfügbar |
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RB162LAM-40TFTR | Rohm Semiconductor |
Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB162LAM-40TFTR | Rohm Semiconductor |
Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RBS2MM40CTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 2A PMDUCurrent - Reverse Leakage @ Vr: 600 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 125°C Supplier Device Package: PMDU Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RBS2MM40CTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 2A PMDUOperating Temperature - Junction: 125°C Supplier Device Package: PMDU Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 600 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RBS2LAM40ATR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 2A PMDTMCurrent - Reverse Leakage @ Vr: 400 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 125°C Supplier Device Package: PMDTM Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA124XCAHZGT116 |
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Hersteller: Rohm Semiconductor
Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA124XCAHZGT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.18 EUR |
| DTA114TUAT106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3
Description: TRANS PREBIAS PNP 200MW UMT3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESR10EZPJ115 |
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Hersteller: Rohm Semiconductor
Description: RES 1.1M OHM 5% 2/5W 0805
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Resistance: 1.1 MOhms
Part Status: Active
Description: RES 1.1M OHM 5% 2/5W 0805
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Resistance: 1.1 MOhms
Part Status: Active
auf Bestellung 8325 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 176+ | 0.1 EUR |
| 228+ | 0.077 EUR |
| 272+ | 0.065 EUR |
| 323+ | 0.055 EUR |
| 392+ | 0.045 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.035 EUR |
| ESR10EZPJ515 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 5.1M OHM 5% 0.4W 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
Resistance: 5.1 mOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Description: RES SMD 5.1M OHM 5% 0.4W 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
Resistance: 5.1 mOhms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
auf Bestellung 5189 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.23 EUR |
| 85+ | 0.21 EUR |
| 158+ | 0.11 EUR |
| 221+ | 0.08 EUR |
| 500+ | 0.05 EUR |
| 1000+ | 0.035 EUR |
| RD3P130SPFRATL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 13A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.18 EUR |
| RD3P130SPFRATL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 100V 13A TO252
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2870 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.59 EUR |
| 10+ | 2.33 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.41 EUR |
| RN141CMT2R |
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Hersteller: Rohm Semiconductor
Description: PIN DIODE 50V 100MA VMN2M
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 2Ohm @ 3mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
Current - Max: 100 mA
Part Status: Active
Description: PIN DIODE 50V 100MA VMN2M
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 2Ohm @ 3mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
Current - Max: 100 mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| R6004KNX |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 4A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 100+ | 1.66 EUR |
| BZX84C22VLYFHT116 |
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Hersteller: Rohm Semiconductor
Description: 250MW, 22V, SOT-23, AUTOMOTIVE Z
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Description: 250MW, 22V, SOT-23, AUTOMOTIVE Z
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZX84C22VLYFHT116 |
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Hersteller: Rohm Semiconductor
Description: 250MW, 22V, SOT-23, AUTOMOTIVE Z
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Description: 250MW, 22V, SOT-23, AUTOMOTIVE Z
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 250 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
auf Bestellung 2793 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| BZX84C22VLYT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 250MW SOT23
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 56 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 22V 250MW SOT23
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 56 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C22VLYT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 250MW SOT23
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 56 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 22V 250MW SOT23
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 56 Ohms
Supplier Device Package: SOT-23
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 2888 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 61+ | 0.29 EUR |
| 126+ | 0.14 EUR |
| RLD94PZJ5-00A |
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Hersteller: Rohm Semiconductor
Description: RLD94PZJ5 IS 940NM MULTI MODE LA
Part Status: Active
Voltage - Input: 2.7V
Current Rating (Amps): 370mA
Wavelength: 942nm
Package / Case: Radial, Can - 3 Lead
Power (Watts): 285mW
Packaging: Tray
Description: RLD94PZJ5 IS 940NM MULTI MODE LA
Part Status: Active
Voltage - Input: 2.7V
Current Rating (Amps): 370mA
Wavelength: 942nm
Package / Case: Radial, Can - 3 Lead
Power (Watts): 285mW
Packaging: Tray
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 82.6 EUR |
| 10+ | 70.01 EUR |
| VS100VLNVWMTR |
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Hersteller: Rohm Semiconductor
Description: 100V 200W, COMPACT AND HIGHLY RE
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: PMDE
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 1.2A
Description: 100V 200W, COMPACT AND HIGHLY RE
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: PMDE
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 1.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS100VLNVWMTR |
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Hersteller: Rohm Semiconductor
Description: 100V 200W, COMPACT AND HIGHLY RE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: PMDE
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 1.2A
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: 100V 200W, COMPACT AND HIGHLY RE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: PMDE
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 1.2A
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3968 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.31 EUR |
| VS100VLNVWMTFTR |
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Hersteller: Rohm Semiconductor
Description: 100V 200W, COMPACT AND HIGHLY RE
Part Status: Active
Power Line Protection: No
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: PMDE
Voltage - Reverse Standoff (Typ): 100V (Max)
Current - Peak Pulse (10/1000µs): 1.2A
Applications: General Purpose
Description: 100V 200W, COMPACT AND HIGHLY RE
Part Status: Active
Power Line Protection: No
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 114V
Unidirectional Channels: 1
Supplier Device Package: PMDE
Voltage - Reverse Standoff (Typ): 100V (Max)
Current - Peak Pulse (10/1000µs): 1.2A
Applications: General Purpose
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD49E42G-MTR |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 4.2V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 4.2V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD49E42G-MTR |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Qualification: AEC-Q100
Grade: Automotive
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 4.2V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Qualification: AEC-Q100
Grade: Automotive
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 4.2V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD52W01G-CTR |
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Hersteller: Rohm Semiconductor
Description: NANO ENERGY, FREE TIME DELAY SET
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 6-SSOP
Voltage - Threshold: 1.32V
Reset Timeout: 27.7ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: NANO ENERGY, FREE TIME DELAY SET
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 6-SSOP
Voltage - Threshold: 1.32V
Reset Timeout: 27.7ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT4013DRC15 |
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Hersteller: Rohm Semiconductor
Description: 750V, 13M, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Description: 750V, 13M, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SML-D13Y8WT86 |
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Hersteller: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 590nm
Supplier Device Package: 0603
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| SML-D13U8WT86 |
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Hersteller: Rohm Semiconductor
Description: LED RED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED RED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| BR25H256FVT-5ACE2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 256KBIT SPI 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR24G512FVT-5AE2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 3.5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 3.5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.19 EUR |
| 6000+ | 1.15 EUR |
| BR24T512F-3AME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR24T512F-3AME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.03 EUR |
| 10+ | 2.7 EUR |
| 25+ | 2.57 EUR |
| 50+ | 2.48 EUR |
| 100+ | 2.4 EUR |
| BR24T512FJ-3AME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR24T512FJ-3AME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2097 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.01 EUR |
| 10+ | 2.74 EUR |
| 25+ | 2.66 EUR |
| 50+ | 2.65 EUR |
| 100+ | 2.37 EUR |
| 250+ | 2.36 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.22 EUR |
| DTC115ECAT116 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 87+ | 0.2 EUR |
| 140+ | 0.13 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.081 EUR |
| RB088T100NZC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOT 100V 10A TO220FN
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR SCHOT 100V 10A TO220FN
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.84 EUR |
| 50+ | 3.08 EUR |
| 100+ | 2.54 EUR |
| 500+ | 2.15 EUR |
| SML-D12Y3WT86 |
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Hersteller: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 581nm
Supplier Device Package: 0603
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Voltage - Forward (Vf) (Typ): 2.2V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 581nm
Supplier Device Package: 0603
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT4062KW7HRTL |
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Hersteller: Rohm Semiconductor
Description: 1200V, 24A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 24A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 10.55 EUR |
| SCT4062KW7HRTL |
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Hersteller: Rohm Semiconductor
Description: 1200V, 24A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 24A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 93W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2669 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.19 EUR |
| 10+ | 15.57 EUR |
| 100+ | 12.91 EUR |
| SCT4036KW7HRTL |
Hersteller: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCT4036KW7HRTL |
Hersteller: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDR03EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 3.6 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 3.6 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.051 EUR |
| SDR03EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 3.6 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 3.6 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
auf Bestellung 9944 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 103+ | 0.17 EUR |
| 151+ | 0.12 EUR |
| 175+ | 0.1 EUR |
| 500+ | 0.074 EUR |
| 1000+ | 0.066 EUR |
| BD9408FV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC LED DRIVER RGLTR PWM 14SSOP
Part Status: Active
Voltage - Supply (Max): 35V
Voltage - Supply (Min): 9V
Dimming: Analog, PWM
Supplier Device Package: 14-SSOP-B
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Applications: Backlight
Operating Temperature: -40°C ~ 105°C
Type: DC DC Regulator
Frequency: 50kHz ~ 2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER RGLTR PWM 14SSOP
Part Status: Active
Voltage - Supply (Max): 35V
Voltage - Supply (Min): 9V
Dimming: Analog, PWM
Supplier Device Package: 14-SSOP-B
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Applications: Backlight
Operating Temperature: -40°C ~ 105°C
Type: DC DC Regulator
Frequency: 50kHz ~ 2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD9408FV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC LED DRIVER RGLTR PWM 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50kHz ~ 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 14-SSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
Description: IC LED DRIVER RGLTR PWM 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50kHz ~ 2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 14-SSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 10+ | 2.82 EUR |
| 25+ | 2.39 EUR |
| 100+ | 1.9 EUR |
| 250+ | 1.66 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.39 EUR |
| ML610Q172-012GAZWAX |
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Hersteller: Rohm Semiconductor
Description: IC
Description: IC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ML610Q172-012GAZWAAL |
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Hersteller: Rohm Semiconductor
Description: IC
Description: IC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DAN235FMT106 |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 35V 200MW SOT323
Qualification: AEC-Q101
Power Dissipation (Max): 200 mW
Grade: Automotive
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Standard - 1 Pair Common Cathode
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 35V 200MW SOT323
Qualification: AEC-Q101
Power Dissipation (Max): 200 mW
Grade: Automotive
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Standard - 1 Pair Common Cathode
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DAN235FMT106 |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 35V 200MW SOT323
Qualification: AEC-Q101
Power Dissipation (Max): 200 mW
Grade: Automotive
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Standard - 1 Pair Common Cathode
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 35V 200MW SOT323
Qualification: AEC-Q101
Power Dissipation (Max): 200 mW
Grade: Automotive
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Standard - 1 Pair Common Cathode
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 2687 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| RD3L03BATTL1 |
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Hersteller: Rohm Semiconductor
Description: PCH -60V -35A POWER MOSFET - RD3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V
Description: PCH -60V -35A POWER MOSFET - RD3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.93 EUR |
| RD3L03BATTL1 |
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Hersteller: Rohm Semiconductor
Description: PCH -60V -35A POWER MOSFET - RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V
Description: PCH -60V -35A POWER MOSFET - RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V
auf Bestellung 4586 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.27 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.03 EUR |
| RB088LAM-40TR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 5A PMDTM
Current - Reverse Leakage @ Vr: 3.6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 5A PMDTM
Current - Reverse Leakage @ Vr: 3.6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB088LAM-40TR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 5A PMDTM
Current - Reverse Leakage @ Vr: 3.6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 5A PMDTM
Current - Reverse Leakage @ Vr: 3.6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 1411 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| RR2LAM4STR |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 2A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| RR2LAM4STR |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5926 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.3 EUR |
| RB088LAM-40TFTR |
![]() |
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 40V, 5A, SOD-128,
Description: SUPER LOW IR, 40V, 5A, SOD-128,
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.51 EUR |
| RB160LAM-40TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB160LAM-40TFTR |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDTM
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 1A PMDTM
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.25 EUR |
| RR1LAM4STFTR |
![]() |
Hersteller: Rohm Semiconductor
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RR1LAM4STFTR |
![]() |
Hersteller: Rohm Semiconductor
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Description: RECTIFYING DIODE (AEC-Q101 QUALI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB162LAM-40TFTR |
![]() |
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB162LAM-40TFTR |
![]() |
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RBS2MM40CTR |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 2A PMDU
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: PMDU
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 2A PMDU
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: PMDU
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RBS2MM40CTR |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 2A PMDU
Operating Temperature - Junction: 125°C
Supplier Device Package: PMDU
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Description: DIODE SCHOTTKY 20V 2A PMDU
Operating Temperature - Junction: 125°C
Supplier Device Package: PMDU
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RBS2LAM40ATR |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 2A PMDTM
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 2A PMDTM
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




























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