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BSS138WT106 BSS138WT106 Rohm Semiconductor datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
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BSS138WT106 BSS138WT106 Rohm Semiconductor datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
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2SC5658FHAT2LR 2SC5658FHAT2LR Rohm Semiconductor datasheet?p=2SC5658FHA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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CSL1901UW1 CSL1901UW1 Rohm Semiconductor datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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CSL1901UW1 CSL1901UW1 Rohm Semiconductor datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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UMH37NTN UMH37NTN Rohm Semiconductor datasheet?p=UMH37N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 20V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
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UMH33NTN UMH33NTN Rohm Semiconductor datasheet?p=UMH33N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Supplier Device Package: UMT6
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 35MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 400mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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CDZVT2R24B CDZVT2R24B Rohm Semiconductor datasheet?p=CDZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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CDZVT2R24B CDZVT2R24B Rohm Semiconductor datasheet?p=CDZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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KDZLVTR75 KDZLVTR75 Rohm Semiconductor kdzlvtr75-e.pdf Description: DIODE ZENER 75V 1W PMDU
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KDZLVTR75 KDZLVTR75 Rohm Semiconductor kdzlvtr75-e.pdf Description: DIODE ZENER 75V 1W PMDU
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PDZVTR8.2B PDZVTR8.2B Rohm Semiconductor pdzvtr8.2b-e.pdf Description: DIODE ZENER 8.75V 1W PMDTM
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PDZVTR8.2B PDZVTR8.2B Rohm Semiconductor pdzvtr8.2b-e.pdf Description: DIODE ZENER 8.75V 1W PMDTM
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KDZLVTR68 KDZLVTR68 Rohm Semiconductor datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
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KDZLVTR68 KDZLVTR68 Rohm Semiconductor datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
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RD3U080AAFRATL RD3U080AAFRATL Rohm Semiconductor datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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RD3U080AAFRATL RD3U080AAFRATL Rohm Semiconductor datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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R6504END3TL1 R6504END3TL1 Rohm Semiconductor datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-252, LOW-NOISE POWER
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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R6504END3TL1 R6504END3TL1 Rohm Semiconductor datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 4A TO-252, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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R5205PND3FRATL R5205PND3FRATL Rohm Semiconductor datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 525V 5A TO-252, AUTOMOTIVE POWER
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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R5205PND3FRATL R5205PND3FRATL Rohm Semiconductor datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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2SC4617E3HZGTLQ 2SC4617E3HZGTLQ Rohm Semiconductor datasheet?p=2SC4617E3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SC4617E3HZGTLQ 2SC4617E3HZGTLQ Rohm Semiconductor datasheet?p=2SC4617E3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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DTC114EE3HZGTL DTC114EE3HZGTL Rohm Semiconductor datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC114EE3HZGTL DTC114EE3HZGTL Rohm Semiconductor datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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500+0.17 EUR
1000+0.14 EUR
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BD4269UEFJ-CE2 BD4269UEFJ-CE2 Rohm Semiconductor datasheet?p=BD4269UEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 300MA 8-HTSOP-J
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 100mA
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2253 Stücke:
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8+2.75 EUR
11+2.01 EUR
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100+1.62 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.42 EUR
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BD4271EFJ-CE2 BD4271EFJ-CE2 Rohm Semiconductor datasheet?p=BD4271EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (120Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 550mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD4271EFJ-CE2 BD4271EFJ-CE2 Rohm Semiconductor datasheet?p=BD4271EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (120Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 550mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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100+1.99 EUR
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BD433U2WEFJ-CE2 BD433U2WEFJ-CE2 Rohm Semiconductor datasheet?p=BD433U2WEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
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BD450U2EFJ-CE2 BD450U2EFJ-CE2 Rohm Semiconductor datasheet?p=BD450U2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200MA 5.0V OUTPUT LDO REGULATORS
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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10+2.44 EUR
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100+1.9 EUR
250+1.77 EUR
500+1.57 EUR
1000+1.24 EUR
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BD450U2WEFJ-CE2 BD450U2WEFJ-CE2 Rohm Semiconductor datasheet?p=BD450U2WEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 200MA 5.0V OUTPUT LDO REGULATORS
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
auf Bestellung 2475 Stücke:
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SFR10EZPF1602 SFR10EZPF1602 Rohm Semiconductor sfr-e.pdf Description: RES 16 KOHM 1% 1/8W 0805
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BR24H32FJ-5ACE2 BR24H32FJ-5ACE2 Rohm Semiconductor datasheet?p=BR24H32FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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BD820F5UEFJ-CE2 BD820F5UEFJ-CE2 Rohm Semiconductor datasheet?p=BD820F5UEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 5V 200MA 8-HTSOP-J
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.8V @ 200mA
PSRR: 70dB (120Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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10+4.24 EUR
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RD3L08BGNTL RD3L08BGNTL Rohm Semiconductor rd3l08bgntl-e.pdf Description: MOSFET N-CH 60V 80A TO252
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RD3L08BGNTL RD3L08BGNTL Rohm Semiconductor rd3l08bgntl-e.pdf Description: MOSFET N-CH 60V 80A TO252
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RS1L145GNTB RS1L145GNTB Rohm Semiconductor rs1l145gntb-e.pdf Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
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RS1L145GNTB RS1L145GNTB Rohm Semiconductor rs1l145gntb-e.pdf Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
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ML610Q172-111GAZWAX Rohm Semiconductor ML610Q172-73_12-7-17.pdf Description: IC
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RGW50TK65GVC11 RGW50TK65GVC11 Rohm Semiconductor datasheet?p=RGW50TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 67 W
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RB706W-40TL RB706W-40TL Rohm Semiconductor rb706w-40tl-e.pdf Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
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RB706W-40TL RB706W-40TL Rohm Semiconductor rb706w-40tl-e.pdf Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
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RLD90QZW3-00A RLD90QZW3-00A Rohm Semiconductor 90qzw300x001-e.pdf Description: 905NM, 75W, 225M INVISIBLE PULSE
Part Status: Active
Voltage - Input: 16V
Current Rating (Amps): 30A
Wavelength: 905nm
Package / Case: Radial, Can - 3 Lead
Power (Watts): 90W
Packaging: Tray
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RLD90QZW5-10A RLD90QZW5-10A Rohm Semiconductor 90qzw510x001-e.pdf Description: 905NM, 25W, 70M INVISIBLE PULSED
Part Status: Active
Voltage - Input: 20V
Current Rating (Amps): 1A
Wavelength: 905nm
Package / Case: Radial, Can - 3 Lead
Power (Watts): 25W
Packaging: Tray
auf Bestellung 171 Stücke:
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SFR01MZPJ621 SFR01MZPJ621 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR01MZPJ621 SFR01MZPJ621 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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RRE07VTM6SFHTR RRE07VTM6SFHTR Rohm Semiconductor rre07vtm6sfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE07VTM6SFHTR RRE07VTM6SFHTR Rohm Semiconductor rre07vtm6sfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE07VTM4SFHTR RRE07VTM4SFHTR Rohm Semiconductor rre07vtm4sfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE07VTM4SFHTR RRE07VTM4SFHTR Rohm Semiconductor rre07vtm4sfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE02VTM6SFHTR RRE02VTM6SFHTR Rohm Semiconductor rre02vtm6sfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE02VTM6SFHTR RRE02VTM6SFHTR Rohm Semiconductor rre02vtm6sfh.pdf Description: RECTIFIER DIODES (CORRESPONDS TO
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RGWS60TS65DGC13 RGWS60TS65DGC13 Rohm Semiconductor datasheet?p=RGWS60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 51A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
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RGW60TS65DHRC11 RGW60TS65DHRC11 Rohm Semiconductor datasheet?p=RGW60TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 64A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
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RGWS60TS65GC13 RGWS60TS65GC13 Rohm Semiconductor datasheet?p=RGWS60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 51A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
auf Bestellung 559 Stücke:
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RGW60TS65EHRC11 RGW60TS65EHRC11 Rohm Semiconductor datasheet?p=RGW60TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 64A TO247N
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 64 A
Gate Charge: 84 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 37ns/101ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Reverse Recovery Time (trr): 146 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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RGW60TS65HRC11 RGW60TS65HRC11 Rohm Semiconductor datasheet?p=RGW60TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 64A TO247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
Gate Charge: 84 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 36ns/107ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
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DTC143ZE3HZGTL DTC143ZE3HZGTL Rohm Semiconductor datasheet?p=DTC143ZE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143ZE3HZGTL DTC143ZE3HZGTL Rohm Semiconductor datasheet?p=DTC143ZE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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ESR01MZPF2703 ESR01MZPF2703 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 270 kOhms
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BSS138WT106 datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS138WT106
Hersteller: Rohm Semiconductor
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
Produkt ist nicht verfügbar
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BSS138WT106 datasheet?p=BSS138W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS138WT106
Hersteller: Rohm Semiconductor
Description: NCH 60V 310MA, SOT-323, SMALL SI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 310mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
Produkt ist nicht verfügbar
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2SC5658FHAT2LR datasheet?p=2SC5658FHA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC5658FHAT2LR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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CSL1901UW1 datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901UW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
Produkt ist nicht verfügbar
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CSL1901UW1 datasheet?p=CSL1901UW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL1901UW1
Hersteller: Rohm Semiconductor
Description: LED RED DIFFUSED 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Red
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 6mcd
Voltage - Forward (Vf) (Typ): 1.8V
Lens Color: White
Current - Test: 2mA
Height (Max): 0.65mm
Wavelength - Dominant: 620nm
Supplier Device Package: 0603
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.10mm x 0.80mm
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UMH37NTN datasheet?p=UMH37N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH37NTN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 20V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
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UMH33NTN datasheet?p=UMH33N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH33NTN
Hersteller: Rohm Semiconductor
Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Supplier Device Package: UMT6
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 35MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 400mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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CDZVT2R24B datasheet?p=CDZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CDZVT2R24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Produkt ist nicht verfügbar
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CDZVT2R24B datasheet?p=CDZV24B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CDZVT2R24B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 100MW VMN2M
Tolerance: ±2.21%
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: VMN2M (SOD-923)
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
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KDZLVTR75 kdzlvtr75-e.pdf
KDZLVTR75
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 75V 1W PMDU
Produkt ist nicht verfügbar
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KDZLVTR75 kdzlvtr75-e.pdf
KDZLVTR75
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 75V 1W PMDU
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PDZVTR8.2B pdzvtr8.2b-e.pdf
PDZVTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.75V 1W PMDTM
Produkt ist nicht verfügbar
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PDZVTR8.2B pdzvtr8.2b-e.pdf
PDZVTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.75V 1W PMDTM
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KDZLVTR68 datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZLVTR68
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
Produkt ist nicht verfügbar
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KDZLVTR68 datasheet?p=KDZLV68&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZLVTR68
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 68V 1W PMDU
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 52 V
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RD3U080AAFRATL datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080AAFRATL
Hersteller: Rohm Semiconductor
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
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RD3U080AAFRATL datasheet?p=RD3U080AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3U080AAFRATL
Hersteller: Rohm Semiconductor
Description: 250V 8A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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R6504END3TL1 datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar
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R6504END3TL1 datasheet?p=R6504END3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6504END3TL1
Hersteller: Rohm Semiconductor
Description: 650V 4A TO-252, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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R5205PND3FRATL datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5205PND3FRATL
Hersteller: Rohm Semiconductor
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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2500+2.19 EUR
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R5205PND3FRATL datasheet?p=R5205PND3FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5205PND3FRATL
Hersteller: Rohm Semiconductor
Description: 525V 5A TO-252, AUTOMOTIVE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
auf Bestellung 2500 Stücke:
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5+4.77 EUR
10+4.28 EUR
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2SC4617E3HZGTLQ datasheet?p=2SC4617E3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC4617E3HZGTLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SC4617E3HZGTLQ datasheet?p=2SC4617E3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC4617E3HZGTLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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61+0.35 EUR
100+0.21 EUR
500+0.15 EUR
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DTC114EE3HZGTL datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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3000+0.12 EUR
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DTC114EE3HZGTL datasheet?p=DTC114EE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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38+0.57 EUR
60+0.36 EUR
100+0.21 EUR
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BD4269UEFJ-CE2 datasheet?p=BD4269UEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD4269UEFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 300MA 8-HTSOP-J
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 100mA
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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11+2.01 EUR
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BD4271EFJ-CE2 datasheet?p=BD4271EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD4271EFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (120Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 550mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD4271EFJ-CE2 datasheet?p=BD4271EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD4271EFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 550MA 8-HTSOP-J
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (120Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 550mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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7+3.33 EUR
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BD433U2WEFJ-CE2 datasheet?p=BD433U2WEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD433U2WEFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
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BD450U2EFJ-CE2 datasheet?p=BD450U2EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD450U2EFJ-CE2
Hersteller: Rohm Semiconductor
Description: 200MA 5.0V OUTPUT LDO REGULATORS
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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8+2.73 EUR
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BD450U2WEFJ-CE2 datasheet?p=BD450U2WEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD450U2WEFJ-CE2
Hersteller: Rohm Semiconductor
Description: 200MA 5.0V OUTPUT LDO REGULATORS
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.35V @ 100mA
PSRR: 65dB (120Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
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SFR10EZPF1602 sfr-e.pdf
SFR10EZPF1602
Hersteller: Rohm Semiconductor
Description: RES 16 KOHM 1% 1/8W 0805
Produkt ist nicht verfügbar
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BR24H32FJ-5ACE2 datasheet?p=BR24H32FJ-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H32FJ-5ACE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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BD820F5UEFJ-CE2 datasheet?p=BD820F5UEFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD820F5UEFJ-CE2
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 200MA 8-HTSOP-J
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.8V @ 200mA
PSRR: 70dB (120Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 45V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2487 Stücke:
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4+6.64 EUR
10+4.24 EUR
25+3.61 EUR
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RD3L08BGNTL rd3l08bgntl-e.pdf
RD3L08BGNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A TO252
Produkt ist nicht verfügbar
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RD3L08BGNTL rd3l08bgntl-e.pdf
RD3L08BGNTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A TO252
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RS1L145GNTB rs1l145gntb-e.pdf
RS1L145GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
Produkt ist nicht verfügbar
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RS1L145GNTB rs1l145gntb-e.pdf
RS1L145GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 14.5A/47A 8HSOP
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ML610Q172-111GAZWAX ML610Q172-73_12-7-17.pdf
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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RGW50TK65GVC11 datasheet?p=RGW50TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW50TK65GVC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 67 W
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RB706W-40TL rb706w-40tl-e.pdf
RB706W-40TL
Hersteller: Rohm Semiconductor
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
Produkt ist nicht verfügbar
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RB706W-40TL rb706w-40tl-e.pdf
RB706W-40TL
Hersteller: Rohm Semiconductor
Description: 40V, 30MA, SOT-416, SCHOTTKY BAR
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RLD90QZW3-00A 90qzw300x001-e.pdf
RLD90QZW3-00A
Hersteller: Rohm Semiconductor
Description: 905NM, 75W, 225M INVISIBLE PULSE
Part Status: Active
Voltage - Input: 16V
Current Rating (Amps): 30A
Wavelength: 905nm
Package / Case: Radial, Can - 3 Lead
Power (Watts): 90W
Packaging: Tray
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RLD90QZW5-10A 90qzw510x001-e.pdf
RLD90QZW5-10A
Hersteller: Rohm Semiconductor
Description: 905NM, 25W, 70M INVISIBLE PULSED
Part Status: Active
Voltage - Input: 20V
Current Rating (Amps): 1A
Wavelength: 905nm
Package / Case: Radial, Can - 3 Lead
Power (Watts): 25W
Packaging: Tray
auf Bestellung 171 Stücke:
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1+117.51 EUR
10+97.37 EUR
80+93.95 EUR
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SFR01MZPJ621 sfr-e.pdf
SFR01MZPJ621
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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10000+0.025 EUR
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SFR01MZPJ621 sfr-e.pdf
SFR01MZPJ621
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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RRE07VTM6SFHTR rre07vtm6sfh.pdf
RRE07VTM6SFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE07VTM6SFHTR rre07vtm6sfh.pdf
RRE07VTM6SFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE07VTM4SFHTR rre07vtm4sfh.pdf
RRE07VTM4SFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
Produkt ist nicht verfügbar
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RRE07VTM4SFHTR rre07vtm4sfh.pdf
RRE07VTM4SFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE02VTM6SFHTR rre02vtm6sfh.pdf
RRE02VTM6SFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
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RRE02VTM6SFHTR rre02vtm6sfh.pdf
RRE02VTM6SFHTR
Hersteller: Rohm Semiconductor
Description: RECTIFIER DIODES (CORRESPONDS TO
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RGWS60TS65DGC13 datasheet?p=RGWS60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS60TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 51A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
auf Bestellung 600 Stücke:
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2+12.07 EUR
30+6.85 EUR
120+5.71 EUR
510+4.88 EUR
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RGW60TS65DHRC11 datasheet?p=RGW60TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 64A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
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2+13.91 EUR
10+9.45 EUR
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RGWS60TS65GC13 datasheet?p=RGWS60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS60TS65GC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 51A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
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4+5.53 EUR
30+2.98 EUR
120+2.42 EUR
510+2.08 EUR
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RGW60TS65EHRC11 datasheet?p=RGW60TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 64A TO247N
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 64 A
Gate Charge: 84 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 37ns/101ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Reverse Recovery Time (trr): 146 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 420 Stücke:
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2+10.86 EUR
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RGW60TS65HRC11 datasheet?p=RGW60TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 64A TO247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 178 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
Gate Charge: 84 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 36ns/107ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
auf Bestellung 450 Stücke:
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2+13.11 EUR
10+8.85 EUR
450+5.46 EUR
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DTC143ZE3HZGTL datasheet?p=DTC143ZE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143ZE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTC143ZE3HZGTL datasheet?p=DTC143ZE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143ZE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
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ESR01MZPF2703 esr-e.pdf
ESR01MZPF2703
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 270 kOhms
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10000+0.086 EUR
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