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MCR03EZPFX8202 MCR03EZPFX8202 Rohm Semiconductor mcr-e.pdf Description: RES SMD 82K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 82 kOhms
Produkt ist nicht verfügbar
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UMT1NFHATN UMT1NFHATN Rohm Semiconductor datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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UMH11NFHATN UMH11NFHATN Rohm Semiconductor datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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3000+0.12 EUR
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UMH11NFHATN UMH11NFHATN Rohm Semiconductor datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3329 Stücke:
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63+0.28 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.19 EUR
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BD57021MWV-E2 BD57021MWV-E2 Rohm Semiconductor uqfn040v5050_1-e.pdf Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Produkt ist nicht verfügbar
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SDR10EZPJ121 SDR10EZPJ121 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
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SDR10EZPJ121 SDR10EZPJ121 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
auf Bestellung 9318 Stücke:
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46+0.39 EUR
90+0.20 EUR
134+0.13 EUR
157+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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SFR01MZPJ121 SFR01MZPJ121 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
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SFR01MZPJ121 SFR01MZPJ121 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
auf Bestellung 9989 Stücke:
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182+0.10 EUR
278+0.06 EUR
328+0.05 EUR
500+0.04 EUR
1000+0.03 EUR
5000+0.03 EUR
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ESR01MZPJ121 ESR01MZPJ121 Rohm Semiconductor esr-e.pdf Description: RES 120 OHM 5% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
Produkt ist nicht verfügbar
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ESR01MZPJ121 ESR01MZPJ121 Rohm Semiconductor esr-e.pdf Description: RES 120 OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
auf Bestellung 8889 Stücke:
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46+0.39 EUR
89+0.20 EUR
129+0.14 EUR
150+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
5000+0.06 EUR
Mindestbestellmenge: 46
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UMT4403U3T106 UMT4403U3T106 Rohm Semiconductor datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
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UMT4403U3T106 UMT4403U3T106 Rohm Semiconductor datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
auf Bestellung 2970 Stücke:
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19+0.93 EUR
29+0.62 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.30 EUR
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RBR10NS60ATL RBR10NS60ATL Rohm Semiconductor rbr10ns60atl-e.pdf Description: RBR10NS60A IS SCHOTTKY BARRIER D
auf Bestellung 1000 Stücke:
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1000+1.01 EUR
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RBR10NS60ATL RBR10NS60ATL Rohm Semiconductor rbr10ns60atl-e.pdf Description: RBR10NS60A IS SCHOTTKY BARRIER D
auf Bestellung 1000 Stücke:
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10+1.98 EUR
100+1.54 EUR
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RBR30NS60ATL RBR30NS60ATL Rohm Semiconductor datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
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RBR30NS60ATL RBR30NS60ATL Rohm Semiconductor datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
auf Bestellung 945 Stücke:
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10+2.25 EUR
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RBR20NS60ATL RBR20NS60ATL Rohm Semiconductor datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 1000 Stücke:
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1000+1.19 EUR
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RBR20NS60ATL RBR20NS60ATL Rohm Semiconductor datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 1000 Stücke:
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8+2.50 EUR
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RBR10NS60AFHTL RBR10NS60AFHTL Rohm Semiconductor rbr10ns60afhtl-e.pdf Description: DIODE ARRAY SCHOTT 60V 10A LPDS
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RBR10NS60AFHTL RBR10NS60AFHTL Rohm Semiconductor rbr10ns60afhtl-e.pdf Description: DIODE ARRAY SCHOTT 60V 10A LPDS
auf Bestellung 999 Stücke:
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10+1.76 EUR
100+1.37 EUR
500+1.13 EUR
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RBR20NS60AFHTL RBR20NS60AFHTL Rohm Semiconductor datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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RBR20NS60AFHTL RBR20NS60AFHTL Rohm Semiconductor datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 855 Stücke:
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500+1.22 EUR
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RBR30NS60AFHTL RBR30NS60AFHTL Rohm Semiconductor datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+1.11 EUR
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RBR30NS60AFHTL RBR30NS60AFHTL Rohm Semiconductor datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1902 Stücke:
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6+3.04 EUR
10+2.06 EUR
100+1.46 EUR
500+1.20 EUR
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ML620Q156B-628TBZWAX ML620Q156B-628TBZWAX Rohm Semiconductor datasheet?p=ML620Q156B&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BU7232YFVM-CTR BU7232YFVM-CTR Rohm Semiconductor Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
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BU7232YFVM-CTR BU7232YFVM-CTR Rohm Semiconductor Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
auf Bestellung 2006 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
10+2.36 EUR
25+2.23 EUR
100+1.90 EUR
250+1.78 EUR
500+1.56 EUR
1000+1.29 EUR
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BD5291FVE-GTR BD5291FVE-GTR Rohm Semiconductor datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
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BD5291FVE-GTR BD5291FVE-GTR Rohm Semiconductor datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
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RFUH10TB4SNZC9 RFUH10TB4SNZC9 Rohm Semiconductor datasheet?p=RFUH10TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
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RGT20TM65DGC9 RGT20TM65DGC9 Rohm Semiconductor datasheet?p=RGT20TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
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RFN10TF6SC9 RFN10TF6SC9 Rohm Semiconductor datasheet?p=RFN10TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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DA204UMTL DA204UMTL Rohm Semiconductor datasheet?p=DA204UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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ML610Q174-482GAZWAX Rohm Semiconductor datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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ML620Q151BT-NNNTBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-108TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-106TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-110TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-103TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-Z99TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-104TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-107TBWNX Rohm Semiconductor Description: IC
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ML620Q151BT-105TBWNX Rohm Semiconductor Description: IC
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2SA1579U3HZGT106R 2SA1579U3HZGT106R Rohm Semiconductor 2sa1579u3hzgt106r-e.pdf Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
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2SA1579U3HZGT106R 2SA1579U3HZGT106R Rohm Semiconductor 2sa1579u3hzgt106r-e.pdf Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
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ML610Q174-499GAZWAX Rohm Semiconductor datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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R6014YNXC7G R6014YNXC7G Rohm Semiconductor datasheet?p=R6014YNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 9A TO-220FM, FAST SWITCHING
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
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MMBZ33VALYT116 MMBZ33VALYT116 Rohm Semiconductor mmbz33valyt116-e.pdf Description: 26V, SOT-23, DUAL LINE, ANODE CO
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BAS116HYFHT116 BAS116HYFHT116 Rohm Semiconductor datasheet?p=BAS116HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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BAS116HYFHT116 BAS116HYFHT116 Rohm Semiconductor datasheet?p=BAS116HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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ML610Q174-467GAZWAX Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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UT6K3TCR1 UT6K3TCR1 Rohm Semiconductor datasheet?p=UT6K3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6KB5TCR UT6KB5TCR Rohm Semiconductor datasheet?p=UT6KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6KB5TCR UT6KB5TCR Rohm Semiconductor datasheet?p=UT6KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6JC5TCR UT6JC5TCR Rohm Semiconductor datasheet?p=UT6JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6JC5TCR UT6JC5TCR Rohm Semiconductor datasheet?p=UT6JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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2SCR564F3TR 2SCR564F3TR Rohm Semiconductor datasheet?p=2SCR564F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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2SCR564F3TR 2SCR564F3TR Rohm Semiconductor datasheet?p=2SCR564F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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2SCR563F3TR 2SCR563F3TR Rohm Semiconductor datasheet?p=2SCR563F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MCR03EZPFX8202 mcr-e.pdf
MCR03EZPFX8202
Hersteller: Rohm Semiconductor
Description: RES SMD 82K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 82 kOhms
Produkt ist nicht verfügbar
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UMT1NFHATN datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT1NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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UMH11NFHATN datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH11NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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UMH11NFHATN datasheet?p=UMH11NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH11NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
63+0.28 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 25
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BD57021MWV-E2 uqfn040v5050_1-e.pdf
BD57021MWV-E2
Hersteller: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Produkt ist nicht verfügbar
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SDR10EZPJ121 sdr-e.pdf
SDR10EZPJ121
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.05 EUR
Mindestbestellmenge: 5000
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SDR10EZPJ121 sdr-e.pdf
SDR10EZPJ121
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
auf Bestellung 9318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
90+0.20 EUR
134+0.13 EUR
157+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 46
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SFR01MZPJ121 sfr-e.pdf
SFR01MZPJ121
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
Produkt ist nicht verfügbar
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SFR01MZPJ121 sfr-e.pdf
SFR01MZPJ121
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
auf Bestellung 9989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
182+0.10 EUR
278+0.06 EUR
328+0.05 EUR
500+0.04 EUR
1000+0.03 EUR
5000+0.03 EUR
Mindestbestellmenge: 84
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ESR01MZPJ121 esr-e.pdf
ESR01MZPJ121
Hersteller: Rohm Semiconductor
Description: RES 120 OHM 5% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
Produkt ist nicht verfügbar
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ESR01MZPJ121 esr-e.pdf
ESR01MZPJ121
Hersteller: Rohm Semiconductor
Description: RES 120 OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
auf Bestellung 8889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
89+0.20 EUR
129+0.14 EUR
150+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
5000+0.06 EUR
Mindestbestellmenge: 46
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UMT4403U3T106 datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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UMT4403U3T106 datasheet?p=UMT4403U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT4403U3T106
Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
29+0.62 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.30 EUR
Mindestbestellmenge: 19
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RBR10NS60ATL rbr10ns60atl-e.pdf
RBR10NS60ATL
Hersteller: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+1.01 EUR
Mindestbestellmenge: 1000
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RBR10NS60ATL rbr10ns60atl-e.pdf
RBR10NS60ATL
Hersteller: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
10+1.98 EUR
100+1.54 EUR
500+1.27 EUR
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RBR30NS60ATL datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Produkt ist nicht verfügbar
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RBR30NS60ATL datasheet?p=RBR30NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.25 EUR
100+1.60 EUR
500+1.32 EUR
Mindestbestellmenge: 6
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RBR20NS60ATL datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.19 EUR
Mindestbestellmenge: 1000
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RBR20NS60ATL datasheet?p=RBR20NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
Mindestbestellmenge: 8
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RBR10NS60AFHTL rbr10ns60afhtl-e.pdf
RBR10NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Produkt ist nicht verfügbar
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RBR10NS60AFHTL rbr10ns60afhtl-e.pdf
RBR10NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
10+1.76 EUR
100+1.37 EUR
500+1.13 EUR
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RBR20NS60AFHTL datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RBR20NS60AFHTL datasheet?p=RBR20NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.86 EUR
100+1.44 EUR
500+1.22 EUR
Mindestbestellmenge: 8
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RBR30NS60AFHTL datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.11 EUR
Mindestbestellmenge: 1000
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RBR30NS60AFHTL datasheet?p=RBR30NS60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR30NS60AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+2.06 EUR
100+1.46 EUR
500+1.20 EUR
Mindestbestellmenge: 6
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ML620Q156B-628TBZWAX datasheet?p=ML620Q156B&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML620Q156B-628TBZWAX
Hersteller: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BU7232YFVM-CTR
BU7232YFVM-CTR
Hersteller: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
Produkt ist nicht verfügbar
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BU7232YFVM-CTR
BU7232YFVM-CTR
Hersteller: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
auf Bestellung 2006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+2.36 EUR
25+2.23 EUR
100+1.90 EUR
250+1.78 EUR
500+1.56 EUR
1000+1.29 EUR
Mindestbestellmenge: 7
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BD5291FVE-GTR datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5291FVE-GTR
Hersteller: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
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BD5291FVE-GTR datasheet?p=BD5291FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD5291FVE-GTR
Hersteller: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2894 Stücke:
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Anzahl Preis
12+1.50 EUR
14+1.33 EUR
25+1.26 EUR
100+1.04 EUR
250+0.97 EUR
500+0.86 EUR
1000+0.68 EUR
Mindestbestellmenge: 12
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RFUH10TB4SNZC9 datasheet?p=RFUH10TB4SNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH10TB4SNZC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
auf Bestellung 754 Stücke:
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Anzahl Preis
6+3.03 EUR
50+2.13 EUR
100+1.92 EUR
500+1.58 EUR
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RGT20TM65DGC9 datasheet?p=RGT20TM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT20TM65DGC9
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
Produkt ist nicht verfügbar
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RFN10TF6SC9 datasheet?p=RFN10TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN10TF6SC9
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
50+1.63 EUR
100+1.59 EUR
500+0.89 EUR
Mindestbestellmenge: 8
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DA204UMTL datasheet?p=DA204UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DA204UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
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ML610Q174-482GAZWAX datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ML620Q151BT-NNNTBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-108TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-106TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-110TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-103TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-Z99TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-104TBWNX
Hersteller: Rohm Semiconductor
Description: IC
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ML620Q151BT-107TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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ML620Q151BT-105TBWNX
Hersteller: Rohm Semiconductor
Description: IC
Produkt ist nicht verfügbar
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2SA1579U3HZGT106R 2sa1579u3hzgt106r-e.pdf
2SA1579U3HZGT106R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
Mindestbestellmenge: 3000
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2SA1579U3HZGT106R 2sa1579u3hzgt106r-e.pdf
2SA1579U3HZGT106R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
auf Bestellung 5999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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ML610Q174-499GAZWAX datasheet?p=ML610Q174&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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R6014YNXC7G datasheet?p=R6014YNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6014YNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 9A TO-220FM, FAST SWITCHING
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 1033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
50+2.39 EUR
100+1.45 EUR
1000+1.33 EUR
Mindestbestellmenge: 5
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MMBZ33VALYT116 mmbz33valyt116-e.pdf
MMBZ33VALYT116
Hersteller: Rohm Semiconductor
Description: 26V, SOT-23, DUAL LINE, ANODE CO
Produkt ist nicht verfügbar
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BAS116HYFHT116 datasheet?p=BAS116HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS116HYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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BAS116HYFHT116 datasheet?p=BAS116HYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BAS116HYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
44+0.40 EUR
100+0.25 EUR
500+0.18 EUR
Mindestbestellmenge: 29
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ML610Q174-467GAZWAX ML610Q174_8-31-18.pdf
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Produkt ist nicht verfügbar
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UT6K3TCR1 datasheet?p=UT6K3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6K3TCR1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Produkt ist nicht verfügbar
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UT6KB5TCR datasheet?p=UT6KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6KB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Produkt ist nicht verfügbar
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UT6KB5TCR datasheet?p=UT6KB5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6KB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
24+0.76 EUR
26+0.68 EUR
100+0.60 EUR
250+0.56 EUR
500+0.53 EUR
1000+0.51 EUR
Mindestbestellmenge: 17
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UT6JC5TCR datasheet?p=UT6JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Produkt ist nicht verfügbar
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UT6JC5TCR datasheet?p=UT6JC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 9
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2SCR564F3TR datasheet?p=2SCR564F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR564F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
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2SCR564F3TR datasheet?p=2SCR564F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR564F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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Anzahl Preis
8+2.41 EUR
12+1.52 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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2SCR563F3TR datasheet?p=2SCR563F3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR563F3TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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