Suchergebnisse für "rf740" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF740PBF Produktcode: 162988
2
zu Favoriten hinzufügen
Lieblingsprodukt
|
Siliconix |
 Transistoren > MOSFET N-CHGehäuse: TO-220AB Drain-Source-Spannung Uds, V: 400 В Drain-Strom Idd, A: 10 A Durchlasswiderstand Rds(on), Ohm: 0,55 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/63 Montage: THT |
auf Bestellung: 673 St.
|
|
|||||||||||||||||||
|
|
IRF740PBF Produktcode: 24032
zu Favoriten hinzufügen
Lieblingsprodukt
|
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Drain-Source-Spannung Uds, V: 400 V Drain-Strom Idd, A: 10 A Durchlasswiderstand Rds(on), Ohm: 0,55 Ohm Montage: THT |
verfügbar: 6 St.
|
|
||||||||||||||||||
|
|
IRF740SPBF Produktcode: 32580
zu Favoriten hinzufügen
Lieblingsprodukt
|
IR |
Transistoren > MOSFET N-CH Gehäuse: D2PAK (TO-263) Drain-Source-Spannung Uds, V: 400 V Drain-Strom Idd, A: 10 A Durchlasswiderstand Rds(on), Ohm: 0,48 Ohm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/35 Montage: SMD |
auf Bestellung: 3 St.
|
|
||||||||||||||||||
|
|
IRF740SPBF Produktcode: 154285
zu Favoriten hinzufügen
Lieblingsprodukt
|
Siliconix |
Transistoren > MOSFET N-CH Gehäuse: D2PAK (TO-263) Drain-Source-Spannung Uds, V: 400 В Drain-Strom Idd, A: 10 А Durchlasswiderstand Rds(on), Ohm: 0,55 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/63 Montage: SMD |
auf Bestellung: 23 St.
|
|
||||||||||||||||||
|
|
IRF740 | HXY MOSFET |
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740 | Vishay |
Transistor N-Channel MOSFET; 400V; 20V; 550mOhm; 10A; 125W; -55°C ~ 150°C; Replacement: IRF740; IRF740; IRF740 TIRF740 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740 | HXY MOSFET |
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY Anzahl je Verpackung: 25 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| IRF740-ML | MOSLEADER |
Transistor N-Channel MOSFET; 400V; 30V; 420mOhm; 10A; 40W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740-ML MOSLEADER TIRF740 MOS Anzahl je Verpackung: 25 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
|
IRF7401TR | JSMicro Semiconductor |
Transistor N-Channel MOSFET; 30V; 20V; 14mOhm; 12A; 3W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR JSMICRO TIRF7401 JSM Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7401TR | UMW |
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR UMW TIRF7401 UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| IRF7401TR-VB | VBsemi |
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Replacement: YFW4406AS; IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR-VB; IRF7401TR(UMW); IRF7401TR-JSM; IRF7401TR TIRF7401 c Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
|
IRF7402TRPBF | Infineon Technologies |
MOSFETs MOSFT 20V 6.8A 35mOhm 14nC |
auf Bestellung 1515 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7403TR | UMW |
Transistor N-Channel MOSFET; 30V; 20V; 35mOhm; 8,5A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR UMW TIRF7403 UMW Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7403TR | HXY MOSFET |
Transistor N-Channel MOSFET; 30V; 20V; 26mOhm; 8,5A; 1,5W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR HXY MOSFET TIRF7403 HXY Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7403TR | JSMicro Semiconductor |
Transistor N-Channel MOSFET; 30V; 20V; 18mOhm; 15A; 3W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR JSMICRO TIRF7403 JSM Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7404TR | International Rectifier |
P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404 Anzahl je Verpackung: 20 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| IRF7406-HXY | HXY MOSFET |
Transistor P-Channel MOSFET; 30V; 20V; 36mOhm; 9A; 2,5W; -55°C ~ 150°C Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406 HXY MOSFET TIRF7406 HXY Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
|
IRF7406TR | UMW |
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW Anzahl je Verpackung: 100 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7406TR | UMW |
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW Anzahl je Verpackung: 100 Stücke |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7406TR | UMW |
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW Anzahl je Verpackung: 100 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF7406TR | JGSEMI |
Transistor P-Channel MOSFET; 30V; 20V; 80mOhm; 5,5A; 2,1W; -55°C ~ 125°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR JGSEMI TIRF7406 JGS Anzahl je Verpackung: 50 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 963 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ALPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 1618 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ALPBF | Vishay Semiconductors |
MOSFETs TO262 400V 10A N-CH MOSFET |
auf Bestellung 1689 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740AP | Siliconix |
N-MOSFET 10A 400V 125W IRF740A TIRF740 a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 505 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740APBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740APBF | Vishay Semiconductors |
MOSFETs TO220 400V 10A N-CH MOSFET |
auf Bestellung 8691 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740APBF-BE3 | Vishay / Siliconix |
MOSFETs TO220 400V 10A N-CH MOSFET |
auf Bestellung 5955 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740APBF-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 862 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1396 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ASPBF | Vishay Semiconductors |
MOSFETs N-Chan 400V 10 Amp |
auf Bestellung 6161 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ASPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 4340 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ASTRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ASTRLPBF | Vishay Semiconductors |
MOSFETs N-Chan 400V 10 Amp |
auf Bestellung 3183 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740ASTRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
| IRF740LC | Siliconix |
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 125W; -55°C~150°C; Substitute: IRF740LC IRF740LC TIRF740 lc Anzahl je Verpackung: 50 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
|
IRF740LCPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740LCPBF | Vishay Semiconductors |
MOSFETs TO220 400V 10A N-CH MOSFET |
auf Bestellung 1456 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740LCPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 2316 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740LCPBF-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740LCPBF-BE3 | Vishay / Siliconix |
MOSFETs TO220 400V 10A N-CH MOSFET |
auf Bestellung 906 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740PBF | Vishay Semiconductors |
MOSFETs TO220 400V 10A N-CH MOSFET |
auf Bestellung 2505 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740PBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 7787 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740PBF-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 3311 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740PBF-BE3 | Vishay / Siliconix |
MOSFETs TO220 400V 10A N-CH MOSFET |
auf Bestellung 4572 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740S | Siliconix |
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| IRF740S2515 | Harris Corporation |
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P Packaging: Bulk Part Status: Active |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||||
|
|
IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IRF740SPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 3018 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740SPBF | Vishay Semiconductors |
MOSFETs N-Chan 400V 10 Amp |
auf Bestellung 1201 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740STRLPBF | Vishay Semiconductors |
MOSFETs TO263 400V 10A N-CH MOSFET |
auf Bestellung 2259 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 4416 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
IRF740STRRPBF | Vishay Semiconductors |
MOSFETs N-Chan 400V 10 Amp |
auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
| TPIRF7403TR | TECH PUBLIC |
30V 9A 22mOhm@10V 3W 2.5V SOP-8 Single FETs, MOSFETs Equivalent: IRF7403TR; TPIRF7403TR SOP-8 TECH PUBLIC TIRF7403 TEC Anzahl je Verpackung: 50 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
|
UMWIRF7401TR | UMW |
Description: MOSFET N-CH 20V 8.7A 8SOIC Packaging: Cut Tape (CT) |
auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
UMWIRF7403TR | UMW |
Description: MOSFET N-CH 30V 8.5A 8SOIC Packaging: Cut Tape (CT) |
auf Bestellung 2821 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRF740PBF Produktcode: 162988
2
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: Siliconix
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 400 В
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,55 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/63
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 400 В
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,55 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/63
Montage: THT
auf Bestellung: 673 St.
- 673 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.37 EUR |
| 10+ | 1.25 EUR |
| 100+ | 1.09 EUR |
| IRF740PBF Produktcode: 24032
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 400 V
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,55 Ohm
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 400 V
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,55 Ohm
Montage: THT
verfügbar: 6 St.
- 6 St. - stock Köln
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.64 EUR |
| 10+ | 1.51 EUR |
| 100+ | 0.54 EUR |
| IRF740SPBF Produktcode: 32580
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 400 V
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,48 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/35
Montage: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 400 V
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,48 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/35
Montage: SMD
auf Bestellung: 3 St.
- 3 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 2.43 EUR |
| 10+ | 2.24 EUR |
| IRF740SPBF Produktcode: 154285
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: Siliconix
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 400 В
Drain-Strom Idd, A: 10 А
Durchlasswiderstand Rds(on), Ohm: 0,55 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/63
Montage: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Drain-Source-Spannung Uds, V: 400 В
Drain-Strom Idd, A: 10 А
Durchlasswiderstand Rds(on), Ohm: 0,55 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/63
Montage: SMD
auf Bestellung: 23 St.
- 23 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 3.03 EUR |
| IRF740 |
|
Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.64 EUR |
| IRF740 |
|
Hersteller: Vishay
Transistor N-Channel MOSFET; 400V; 20V; 550mOhm; 10A; 125W; -55°C ~ 150°C; Replacement: IRF740; IRF740; IRF740 TIRF740
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 400V; 20V; 550mOhm; 10A; 125W; -55°C ~ 150°C; Replacement: IRF740; IRF740; IRF740 TIRF740
Anzahl je Verpackung: 50 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 2.95 EUR |
| IRF740 |
|
Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY
Anzahl je Verpackung: 25 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.64 EUR |
| IRF740-ML |
Hersteller: MOSLEADER
Transistor N-Channel MOSFET; 400V; 30V; 420mOhm; 10A; 40W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740-ML MOSLEADER TIRF740 MOS
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 400V; 30V; 420mOhm; 10A; 40W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740-ML MOSLEADER TIRF740 MOS
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.48 EUR |
| IRF7401TR |
|
Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 30V; 20V; 14mOhm; 12A; 3W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR JSMICRO TIRF7401 JSM
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 14mOhm; 12A; 3W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR JSMICRO TIRF7401 JSM
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.62 EUR |
| IRF7401TR |
|
Hersteller: UMW
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR UMW TIRF7401 UMW
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR UMW TIRF7401 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.87 EUR |
| IRF7401TR-VB |
Hersteller: VBsemi
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Replacement: YFW4406AS; IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR-VB; IRF7401TR(UMW); IRF7401TR-JSM; IRF7401TR TIRF7401 c
Anzahl je Verpackung: 100 Stücke
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Replacement: YFW4406AS; IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR-VB; IRF7401TR(UMW); IRF7401TR-JSM; IRF7401TR TIRF7401 c
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.64 EUR |
| IRF7402TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 20V 6.8A 35mOhm 14nC
MOSFETs MOSFT 20V 6.8A 35mOhm 14nC
auf Bestellung 1515 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.22 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.88 EUR |
| 2000+ | 0.83 EUR |
| 4000+ | 0.7 EUR |
| IRF7403TR |
|
Hersteller: UMW
Transistor N-Channel MOSFET; 30V; 20V; 35mOhm; 8,5A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR UMW TIRF7403 UMW
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 35mOhm; 8,5A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR UMW TIRF7403 UMW
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.65 EUR |
| IRF7403TR |
|
Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 30V; 20V; 26mOhm; 8,5A; 1,5W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR HXY MOSFET TIRF7403 HXY
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 26mOhm; 8,5A; 1,5W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR HXY MOSFET TIRF7403 HXY
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.68 EUR |
| IRF7403TR |
|
Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 30V; 20V; 18mOhm; 15A; 3W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR JSMICRO TIRF7403 JSM
Anzahl je Verpackung: 100 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 18mOhm; 15A; 3W; -55°C ~ 150°C; Equivalent: IRF7403; IRF7403TR; SP001563614; SP001559832; IRF7403TR JSMICRO TIRF7403 JSM
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.43 EUR |
| IRF7404TR |
|
Hersteller: International Rectifier
P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404
Anzahl je Verpackung: 20 Stücke
P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404
Anzahl je Verpackung: 20 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 1.21 EUR |
| IRF7406-HXY |
Hersteller: HXY MOSFET
Transistor P-Channel MOSFET; 30V; 20V; 36mOhm; 9A; 2,5W; -55°C ~ 150°C Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406 HXY MOSFET TIRF7406 HXY
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 36mOhm; 9A; 2,5W; -55°C ~ 150°C Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406 HXY MOSFET TIRF7406 HXY
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.38 EUR |
| IRF7406TR |
|
Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 100 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.46 EUR |
| IRF7406TR |
|
Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 100 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.46 EUR |
| IRF7406TR |
|
Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 100 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.46 EUR |
| IRF7406TR |
|
Hersteller: JGSEMI
Transistor P-Channel MOSFET; 30V; 20V; 80mOhm; 5,5A; 2,1W; -55°C ~ 125°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR JGSEMI TIRF7406 JGS
Anzahl je Verpackung: 50 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 80mOhm; 5,5A; 2,1W; -55°C ~ 125°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR JGSEMI TIRF7406 JGS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.6 EUR |
| IRF740ALPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 3.65 EUR |
| 38+ | 2.26 EUR |
| 50+ | 1.83 EUR |
| 100+ | 1.74 EUR |
| IRF740ALPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 400V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.39 EUR |
| 50+ | 3.75 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.77 EUR |
| 1000+ | 2.57 EUR |
| IRF740ALPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO262 400V 10A N-CH MOSFET
MOSFETs TO262 400V 10A N-CH MOSFET
auf Bestellung 1689 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.27 EUR |
| 10+ | 3.69 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.62 EUR |
| IRF740AP |
|
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 3.07 EUR |
| IRF740APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.27 EUR |
| 47+ | 1.82 EUR |
| 53+ | 1.62 EUR |
| 100+ | 1.48 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.31 EUR |
| IRF740APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.85 EUR |
| 50+ | 3.45 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.53 EUR |
| IRF740APBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 400V 10A N-CH MOSFET
MOSFETs TO220 400V 10A N-CH MOSFET
auf Bestellung 8691 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.69 EUR |
| 10+ | 2.53 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.49 EUR |
| 2000+ | 1.44 EUR |
| 5000+ | 1.3 EUR |
| IRF740APBF-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 400V 10A N-CH MOSFET
MOSFETs TO220 400V 10A N-CH MOSFET
auf Bestellung 5955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.69 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.46 EUR |
| 2000+ | 1.4 EUR |
| IRF740APBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.85 EUR |
| 50+ | 3.45 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.53 EUR |
| IRF740ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.81 EUR |
| 30+ | 2.88 EUR |
| 35+ | 2.43 EUR |
| 44+ | 1.95 EUR |
| 50+ | 1.74 EUR |
| 100+ | 1.57 EUR |
| 250+ | 1.46 EUR |
| 1000+ | 1.38 EUR |
| IRF740ASPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 400V 10 Amp
MOSFETs N-Chan 400V 10 Amp
auf Bestellung 6161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.97 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.07 EUR |
| 2000+ | 2 EUR |
| IRF740ASPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.95 EUR |
| 50+ | 3.51 EUR |
| 100+ | 3.18 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.39 EUR |
| 2000+ | 2.24 EUR |
| IRF740ASTRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.39 EUR |
| 10+ | 4.84 EUR |
| 100+ | 3.39 EUR |
| IRF740ASTRLPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 400V 10 Amp
MOSFETs N-Chan 400V 10 Amp
auf Bestellung 3183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 4.32 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.39 EUR |
| 800+ | 2.32 EUR |
| 4800+ | 2.24 EUR |
| IRF740ASTRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.63 EUR |
| 1600+ | 2.46 EUR |
| IRF740LC |
|
Hersteller: Siliconix
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 125W; -55°C~150°C; Substitute: IRF740LC IRF740LC TIRF740 lc
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 125W; -55°C~150°C; Substitute: IRF740LC IRF740LC TIRF740 lc
Anzahl je Verpackung: 50 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 2.82 EUR |
| IRF740LCPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.87 EUR |
| 35+ | 2.5 EUR |
| 42+ | 2.05 EUR |
| 50+ | 1.81 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.43 EUR |
| IRF740LCPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 400V 10A N-CH MOSFET
MOSFETs TO220 400V 10A N-CH MOSFET
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.75 EUR |
| 10+ | 3.94 EUR |
| 100+ | 3.58 EUR |
| 500+ | 2.93 EUR |
| 1000+ | 2.73 EUR |
| 2000+ | 2.56 EUR |
| IRF740LCPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2316 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.88 EUR |
| 50+ | 4.01 EUR |
| 100+ | 3.63 EUR |
| 500+ | 2.98 EUR |
| 1000+ | 2.77 EUR |
| 2000+ | 2.59 EUR |
| IRF740LCPBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.9 EUR |
| 50+ | 4.02 EUR |
| 100+ | 3.64 EUR |
| 500+ | 2.99 EUR |
| IRF740LCPBF-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 400V 10A N-CH MOSFET
MOSFETs TO220 400V 10A N-CH MOSFET
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.75 EUR |
| 10+ | 3.88 EUR |
| 100+ | 3.28 EUR |
| 500+ | 2.87 EUR |
| 1000+ | 2.84 EUR |
| IRF740PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.81 EUR |
| 46+ | 1.86 EUR |
| 54+ | 1.59 EUR |
| 55+ | 1.57 EUR |
| 100+ | 1.43 EUR |
| 250+ | 1.27 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |
| 2000+ | 1.02 EUR |
| IRF740PBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 400V 10A N-CH MOSFET
MOSFETs TO220 400V 10A N-CH MOSFET
auf Bestellung 2505 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.94 EUR |
| 10+ | 2.53 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.63 EUR |
| 2000+ | 1.54 EUR |
| 5000+ | 1.36 EUR |
| IRF740PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 7787 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 50+ | 3.07 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.08 EUR |
| 2000+ | 1.94 EUR |
| 5000+ | 1.78 EUR |
| IRF740PBF-BE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.86 EUR |
| 42+ | 2.05 EUR |
| 47+ | 1.82 EUR |
| 51+ | 1.69 EUR |
| 100+ | 1.51 EUR |
| IRF740PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3311 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.85 EUR |
| 50+ | 3.45 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.36 EUR |
| 2000+ | 2.2 EUR |
| IRF740PBF-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 400V 10A N-CH MOSFET
MOSFETs TO220 400V 10A N-CH MOSFET
auf Bestellung 4572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.01 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.68 EUR |
| 2000+ | 1.58 EUR |
| 5000+ | 1.57 EUR |
| IRF740S |
|
Hersteller: Siliconix
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 3.14 EUR |
| IRF740S2515 |
Hersteller: Harris Corporation
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P
Packaging: Bulk
Part Status: Active
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P
Packaging: Bulk
Part Status: Active
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 260+ | 2.13 EUR |
| IRF740SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.59 EUR |
| 27+ | 3.18 EUR |
| 32+ | 2.69 EUR |
| 50+ | 2.37 EUR |
| 100+ | 2.14 EUR |
| 150+ | 2.02 EUR |
| 250+ | 1.9 EUR |
| IRF740SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3018 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.39 EUR |
| 50+ | 3.75 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.77 EUR |
| 1000+ | 2.57 EUR |
| 2000+ | 2.4 EUR |
| IRF740SPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 400V 10 Amp
MOSFETs N-Chan 400V 10 Amp
auf Bestellung 1201 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.76 EUR |
| 10+ | 3.69 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.37 EUR |
| 5000+ | 2.24 EUR |
| IRF740STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.63 EUR |
| 1600+ | 2.46 EUR |
| 2400+ | 2.37 EUR |
| 4000+ | 2.3 EUR |
| IRF740STRLPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO263 400V 10A N-CH MOSFET
MOSFETs TO263 400V 10A N-CH MOSFET
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.53 EUR |
| 10+ | 4.25 EUR |
| 100+ | 3 EUR |
| 500+ | 2.43 EUR |
| 800+ | 2.24 EUR |
| 2400+ | 2.12 EUR |
| IRF740STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.39 EUR |
| 10+ | 4.84 EUR |
| 100+ | 3.39 EUR |
| IRF740STRRPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 400V 10 Amp
MOSFETs N-Chan 400V 10 Amp
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.47 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.53 EUR |
| 500+ | 2.75 EUR |
| 800+ | 2.64 EUR |
| 2400+ | 2.62 EUR |
| TPIRF7403TR |
Hersteller: TECH PUBLIC
30V 9A 22mOhm@10V 3W 2.5V SOP-8 Single FETs, MOSFETs Equivalent: IRF7403TR; TPIRF7403TR SOP-8 TECH PUBLIC TIRF7403 TEC
Anzahl je Verpackung: 50 Stücke
30V 9A 22mOhm@10V 3W 2.5V SOP-8 Single FETs, MOSFETs Equivalent: IRF7403TR; TPIRF7403TR SOP-8 TECH PUBLIC TIRF7403 TEC
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.52 EUR |
| UMWIRF7401TR |
|
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.51 EUR |
| 23+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| UMWIRF7403TR |
|
auf Bestellung 2821 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 20+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]