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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SD1111 (Bipolartransistor NPN) Produktcode: 30769 |
Sanyo |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-92 fT: 200 MHz Uceo,V: 50 Ucbo,V: 80 Ic,A: 0,7 |
auf Bestellung 9 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1133C Produktcode: 184977 |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-220C fT: 7 MHz Uceo,V: 50 V Ucbo,V: 70 V Ic,A: 4 A h21: 200 ZCODE: THT |
auf Bestellung 18 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1140 (Bipolartransistor NPN) Produktcode: 35536 |
Toshiba |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-92L Uceo,V: 30 Ucbo,V: 30 Ic,A: 1,5 h21: 4000 Bem.: Darlington ZCODE: THT |
auf Bestellung 21 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1148 Produktcode: 184799 |
NSC |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-247 Uceo,V: 140 V Ucbo,V: 200 V Ic,A: 10 A h21: 50 ZCODE: THT |
auf Bestellung 3 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1153 Produktcode: 184784 |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-92 fT: 120 MHz Uceo,V: 50 V Ucbo,V: 80 V Ic,A: 1,5 A Bem.: Дарлінгтон ZCODE: THT |
auf Bestellung 36 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1163 Produktcode: 184944 |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-220C Uceo,V: 120 V Ucbo,V: 300 V Ic,A: 7 A h21: 25 ZCODE: THT |
auf Bestellung 22 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1164 Produktcode: 76279 |
NEC |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-3 (MP-3) Uceo,V: 60 Ucbo,V: 150 Ic,A: 2 ZCODE: THT |
verfügbar: 812 Stück
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+1 |
2SD1175 Produktcode: 185060 |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-3 Uceo,V: 1500 V Ucbo,V: 1500 V Ic,A: 5 A h21: 8 ZCODE: THT |
auf Bestellung 1 Stück: Lieferzeit 21-28 Tag (e) |
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2SD1111 | onsemi |
Description: NPN DARLINGTON TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 7084 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1111 | ONSEMI |
Description: ONSEMI - 2SD1111 - 2SD1111, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7084 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1111-AA | Sanyo |
Description: TRANS NPN DARL 50V 0.7A 3NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1111-AA | Fairchild Semiconductor |
Description: TRANS NPN DARL 50V 0.7A 3NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1111-AA | ONSEMI |
Description: ONSEMI - 2SD1111-AA - 2SD1111-AA, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2859 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1133C-E | Renesas Electronics Corporation |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V Frequency - Transition: 7MHz Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 40 W |
auf Bestellung 1658 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1145F | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 900 mW |
auf Bestellung 26288 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1145F | ONSEMI |
Description: ONSEMI - 2SD1145F - 2SD1145F, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 26288 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1145F-AE | onsemi |
Description: BIP NPN 5A 20V Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 900 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1145F-AE | ONSEMI |
Description: ONSEMI - 2SD1145F-AE - 2SD1145 - BIPOLAR NPN TRANSISTOR, 5A 20V tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1145G | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 900 mW |
auf Bestellung 121526 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1145G | ONSEMI |
Description: ONSEMI - 2SD1145G - 2SD1145G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 121526 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1145G-AE | onsemi |
Description: BIP NPN 5A 20V Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 900 mW |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1145G-AE | ONSEMI |
Description: ONSEMI - 2SD1145G-AE - 2SD1145 - BIPOLAR NPN TRANSISTOR, 5A 20V tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1153 | Sanyo |
Description: NPN DARLINGTON TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
auf Bestellung 5450 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1153 | ONSEMI |
Description: ONSEMI - 2SD1153 - 2SD1153, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5450 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1153-AE | onsemi |
Description: NPN DARLINGTON TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
auf Bestellung 7319 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1153-AE | ONSEMI |
Description: ONSEMI - 2SD1153-AE - 2SD1153-AE, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7319 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1163A-E | Renesas Electronics Corporation |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 5mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 5V Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 40 W |
auf Bestellung 2133 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1190 | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Frequency - Transition: 20MHz Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
auf Bestellung 5627 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1190 | ONSEMI |
Description: ONSEMI - 2SD1190 - 2SD1190, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5627 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1191 | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 7mA, 3.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3.5A, 2V Frequency - Transition: 20MHz Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
auf Bestellung 22300 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1191 | ONSEMI |
Description: ONSEMI - 2SD1191 - 2SD1191, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 22300 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1193 | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V Frequency - Transition: 20MHz Supplier Device Package: TO-3PB Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 70 W |
auf Bestellung 7825 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1193 | ONSEMI |
Description: ONSEMI - 2SD1193 - 2SD1193, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7825 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD11 | SHARP | 03+ |
auf Bestellung 6424 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD110 | TOS/HIT | 98+ TO-3 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1100 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1101 | HITACHI |
auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1101ACTL | HITACHI | SOT23/SOT323 |
auf Bestellung 2017 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1102 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1103 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1104 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1105 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1106 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1109 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1109A |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1109C |
auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD111 | TOS/HIT | 98+ TO-3 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1110 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1110A |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1111 | SAY |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1113 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1114 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1115 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1115K |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1117 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1117A |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1118 |
auf Bestellung 9800 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1119 | KESENES | 09+ |
auf Bestellung 200018 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1119-Q | KESENES | 09+ |
auf Bestellung 5123 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD1119-R | PANASONIC | SOT-89 |
auf Bestellung 29000 Stücke: Lieferzeit 21-28 Tag (e) |
2SD1111 (Bipolartransistor NPN) Produktcode: 30769 |
Hersteller: Sanyo
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 200 MHz
Uceo,V: 50
Ucbo,V: 80
Ic,A: 0,7
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 200 MHz
Uceo,V: 50
Ucbo,V: 80
Ic,A: 0,7
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 0.5 EUR |
2SD1133C Produktcode: 184977 |
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220C
fT: 7 MHz
Uceo,V: 50 V
Ucbo,V: 70 V
Ic,A: 4 A
h21: 200
ZCODE: THT
Gehäuse: TO-220C
fT: 7 MHz
Uceo,V: 50 V
Ucbo,V: 70 V
Ic,A: 4 A
h21: 200
ZCODE: THT
auf Bestellung 18 Stück:
Lieferzeit 21-28 Tag (e)2SD1140 (Bipolartransistor NPN) Produktcode: 35536 |
Hersteller: Toshiba
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92L
Uceo,V: 30
Ucbo,V: 30
Ic,A: 1,5
h21: 4000
Bem.: Darlington
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92L
Uceo,V: 30
Ucbo,V: 30
Ic,A: 1,5
h21: 4000
Bem.: Darlington
ZCODE: THT
auf Bestellung 21 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 0.29 EUR |
2SD1148 Produktcode: 184799 |
Hersteller: NSC
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-247
Uceo,V: 140 V
Ucbo,V: 200 V
Ic,A: 10 A
h21: 50
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-247
Uceo,V: 140 V
Ucbo,V: 200 V
Ic,A: 10 A
h21: 50
ZCODE: THT
auf Bestellung 3 Stück:
Lieferzeit 21-28 Tag (e)2SD1153 Produktcode: 184784 |
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 120 MHz
Uceo,V: 50 V
Ucbo,V: 80 V
Ic,A: 1,5 A
Bem.: Дарлінгтон
ZCODE: THT
Gehäuse: TO-92
fT: 120 MHz
Uceo,V: 50 V
Ucbo,V: 80 V
Ic,A: 1,5 A
Bem.: Дарлінгтон
ZCODE: THT
auf Bestellung 36 Stück:
Lieferzeit 21-28 Tag (e)2SD1163 Produktcode: 184944 |
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220C
Uceo,V: 120 V
Ucbo,V: 300 V
Ic,A: 7 A
h21: 25
ZCODE: THT
Gehäuse: TO-220C
Uceo,V: 120 V
Ucbo,V: 300 V
Ic,A: 7 A
h21: 25
ZCODE: THT
auf Bestellung 22 Stück:
Lieferzeit 21-28 Tag (e)2SD1164 Produktcode: 76279 |
Hersteller: NEC
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-3 (MP-3)
Uceo,V: 60
Ucbo,V: 150
Ic,A: 2
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-3 (MP-3)
Uceo,V: 60
Ucbo,V: 150
Ic,A: 2
ZCODE: THT
verfügbar: 812 Stück
Anzahl | Preis ohne MwSt |
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1+ | 0.2 EUR |
10+ | 0.17 EUR |
100+ | 0.15 EUR |
2SD1175 Produktcode: 185060 |
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-3
Uceo,V: 1500 V
Ucbo,V: 1500 V
Ic,A: 5 A
h21: 8
ZCODE: THT
Gehäuse: TO-3
Uceo,V: 1500 V
Ucbo,V: 1500 V
Ic,A: 5 A
h21: 8
ZCODE: THT
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)2SD1111 |
Hersteller: onsemi
Description: NPN DARLINGTON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
Description: NPN DARLINGTON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 7084 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
683+ | 0.73 EUR |
2SD1111 |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1111 - 2SD1111, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1111 - 2SD1111, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7084 Stücke:
Lieferzeit 14-21 Tag (e)2SD1111-AA |
Hersteller: Sanyo
Description: TRANS NPN DARL 50V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
Description: TRANS NPN DARL 50V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2219+ | 0.23 EUR |
2SD1111-AA |
Hersteller: Fairchild Semiconductor
Description: TRANS NPN DARL 50V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
Description: TRANS NPN DARL 50V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2219+ | 0.23 EUR |
2SD1111-AA |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1111-AA - 2SD1111-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1111-AA - 2SD1111-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2859 Stücke:
Lieferzeit 14-21 Tag (e)2SD1133C-E |
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
Frequency - Transition: 7MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
Frequency - Transition: 7MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1658 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
258+ | 1.91 EUR |
2SD1145F |
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
auf Bestellung 26288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1402+ | 0.35 EUR |
2SD1145F |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1145F - 2SD1145F, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1145F - 2SD1145F, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 26288 Stücke:
Lieferzeit 14-21 Tag (e)2SD1145F-AE |
Hersteller: onsemi
Description: BIP NPN 5A 20V
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Description: BIP NPN 5A 20V
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1402+ | 0.35 EUR |
2SD1145F-AE |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1145F-AE - 2SD1145 - BIPOLAR NPN TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1145F-AE - 2SD1145 - BIPOLAR NPN TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)2SD1145G |
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
auf Bestellung 121526 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1402+ | 0.35 EUR |
2SD1145G |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1145G - 2SD1145G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1145G - 2SD1145G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 121526 Stücke:
Lieferzeit 14-21 Tag (e)2SD1145G-AE |
Hersteller: onsemi
Description: BIP NPN 5A 20V
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Description: BIP NPN 5A 20V
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1402+ | 0.35 EUR |
2SD1145G-AE |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1145G-AE - 2SD1145 - BIPOLAR NPN TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1145G-AE - 2SD1145 - BIPOLAR NPN TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)2SD1153 |
Hersteller: Sanyo
Description: NPN DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: NPN DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
auf Bestellung 5450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
468+ | 1.05 EUR |
2SD1153 |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1153 - 2SD1153, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1153 - 2SD1153, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5450 Stücke:
Lieferzeit 14-21 Tag (e)2SD1153-AE |
Hersteller: onsemi
Description: NPN DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: NPN DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
auf Bestellung 7319 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
833+ | 0.59 EUR |
2SD1153-AE |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1153-AE - 2SD1153-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1153-AE - 2SD1153-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7319 Stücke:
Lieferzeit 14-21 Tag (e)2SD1163A-E |
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 5V
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 40 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 5V
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 40 W
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
239+ | 2.08 EUR |
2SD1190 |
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 5627 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
833+ | 0.59 EUR |
2SD1190 |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1190 - 2SD1190, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1190 - 2SD1190, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5627 Stücke:
Lieferzeit 14-21 Tag (e)2SD1191 |
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 7mA, 3.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3.5A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 7mA, 3.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3.5A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 22300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
666+ | 0.74 EUR |
2SD1191 |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1191 - 2SD1191, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1191 - 2SD1191, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 22300 Stücke:
Lieferzeit 14-21 Tag (e)2SD1193 |
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 70 W
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 14mA, 7A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 7A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 70 W
auf Bestellung 7825 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
222+ | 2.22 EUR |
2SD1193 |
Hersteller: ONSEMI
Description: ONSEMI - 2SD1193 - 2SD1193, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SD1193 - 2SD1193, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7825 Stücke:
Lieferzeit 14-21 Tag (e)Wählen Sie Seite:
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