Suchergebnisse für "11n60" : > 60

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11N60 SIEMENS TO220
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
11N60C3 INFINEON 09+ DIP-3
auf Bestellung 2162 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
11N60S5 TO-263
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOW11N60 AOW11N60 ALPHA & OMEGA SEMICONDUCTOR AOW11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
auf Bestellung 697 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
88+0.82 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
AOW11N60 AOW11N60 ALPHA & OMEGA SEMICONDUCTOR AOW11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 697 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
88+0.82 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
AOW11N60 AOW11N60 Alpha & Omega Semiconductor Inc. AOW11N60.pdf Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
50+1.71 EUR
100+1.55 EUR
500+1.27 EUR
Mindestbestellmenge: 6
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AOWF11N60 AOWF11N60 ALPHA & OMEGA SEMICONDUCTOR AOWF11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
100+0.72 EUR
103+0.70 EUR
Mindestbestellmenge: 87
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AOWF11N60 AOWF11N60 ALPHA & OMEGA SEMICONDUCTOR AOWF11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 710 Stücke:
Lieferzeit 7-14 Tag (e)
87+0.83 EUR
100+0.72 EUR
103+0.70 EUR
Mindestbestellmenge: 87
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FCB11N60TM FCB11N60TM onsemi / Fairchild fcb11n60-d.pdf MOSFETs HIGH POWER
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.95 EUR
10+4.63 EUR
100+3.29 EUR
800+2.68 EUR
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FCB11N60TM FCB11N60TM onsemi fcb11n60-d.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.92 EUR
Mindestbestellmenge: 800
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FCB11N60TM FCB11N60TM onsemi fcb11n60-d.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1234 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.20 EUR
10+4.75 EUR
100+3.36 EUR
Mindestbestellmenge: 3
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FCI11N60 FCI11N60 Fairchild Semiconductor FAIRS27283-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 64279 Stücke:
Lieferzeit 10-14 Tag (e)
249+2.04 EUR
Mindestbestellmenge: 249
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60 FCP11N60 ONSEMI FCP11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
24+3.02 EUR
28+2.59 EUR
30+2.46 EUR
Mindestbestellmenge: 22
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FCP11N60 FCP11N60 ONSEMI FCP11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.39 EUR
24+3.02 EUR
28+2.59 EUR
30+2.46 EUR
250+2.36 EUR
Mindestbestellmenge: 22
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FCP11N60 FCP11N60 onsemi / Fairchild fcpf11n60t-d.pdf MOSFETs 600V 11A N-CH
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.49 EUR
50+3.19 EUR
100+2.90 EUR
500+2.48 EUR
1000+2.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60 FCP11N60 onsemi fcpf11n60t-d.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 6630 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.51 EUR
50+3.25 EUR
100+2.97 EUR
500+2.52 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60F FCP11N60F onsemi fcp11n60f-d.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.95 EUR
50+3.56 EUR
100+3.23 EUR
500+2.65 EUR
1000+2.48 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60F FCP11N60F onsemi / Fairchild fcp11n60f-d.pdf MOSFETs 600V NCH MOSFET
auf Bestellung 5598 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.37 EUR
10+4.70 EUR
50+2.85 EUR
100+2.69 EUR
500+2.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60N FCP11N60N Fairchild Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
173+2.93 EUR
Mindestbestellmenge: 173
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FCPF11N60 FCPF11N60 ONSEMI FCP11N60.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.19 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 23
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FCPF11N60 ON-Semicoductor fcpf11n60t-d.pdf description N-MOSFET 11A 600V 36W 0.38Ω FCPF11N60 TFCPF11N60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.81 EUR
Mindestbestellmenge: 10
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FCPF11N60 FCPF11N60 ONSEMI FCP11N60.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.19 EUR
32+2.26 EUR
34+2.13 EUR
500+2.06 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60 FCPF11N60 onsemi fcpf11n60t-d.pdf description Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.00 EUR
50+3.59 EUR
100+3.26 EUR
500+2.68 EUR
1000+2.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60 FCPF11N60 onsemi / Fairchild fcpf11n60t-d.pdf description MOSFETs 600V 11A N-CH
auf Bestellung 8761 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.49 EUR
10+4.47 EUR
50+2.90 EUR
100+2.76 EUR
500+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60F FCPF11N60F onsemi fcpf11n60f-d.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.64 EUR
50+3.94 EUR
100+3.59 EUR
500+2.96 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60F FCPF11N60F onsemi / Fairchild fcpf11n60f-d.pdf MOSFETs 600V NCH MOSFET
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.02 EUR
10+6.99 EUR
50+3.75 EUR
100+3.40 EUR
500+2.90 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60NT FCPF11N60NT Fairchild Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 14218 Stücke:
Lieferzeit 10-14 Tag (e)
135+3.76 EUR
Mindestbestellmenge: 135
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FCPF11N60T FCPF11N60T onsemi fcpf11n60t-d.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.34 EUR
50+3.78 EUR
100+3.43 EUR
500+2.83 EUR
Mindestbestellmenge: 3
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SIHH11N60E-T1-GE3 SIHH11N60E-T1-GE3 Vishay / Siliconix sihh11n60e.pdf MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
auf Bestellung 2371 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.68 EUR
10+4.24 EUR
100+3.45 EUR
500+3.06 EUR
1000+2.62 EUR
3000+2.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 1405 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.27 EUR
10+5.48 EUR
100+3.90 EUR
500+3.23 EUR
1000+3.01 EUR
Mindestbestellmenge: 3
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SPA11N60C3 SPA11N60C3 Infineon Technologies Infineon_SPP_I_A11N60C3_E8185_DS_v03_03_EN-1732247.pdf MOSFETs N-Ch 600V 11A TO220FP-3 CoolMOS C3
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.65 EUR
10+4.56 EUR
25+3.26 EUR
100+3.01 EUR
250+2.85 EUR
500+2.59 EUR
1000+2.22 EUR
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SPA11N60C3XKSA1 SPA11N60C3XKSA1 Infineon Technologies SPx11N60C3%20%28E8185%29.pdf Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 531 Stücke:
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50+3.15 EUR
100+2.85 EUR
500+2.33 EUR
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SPB11N60C3 SPB11N60C3 Infineon Technologies Infineon_SPB11N60C3_DS_v02_06_en-3360040.pdf MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.86 EUR
10+4.72 EUR
25+4.61 EUR
100+3.34 EUR
500+2.75 EUR
1000+2.68 EUR
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SPB11N60C3ATMA1 SPB11N60C3ATMA1 Infineon Technologies SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 3507 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.20 EUR
10+4.75 EUR
100+3.36 EUR
500+2.76 EUR
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SPB11N60C3ATMA1 SPB11N60C3ATMA1 Infineon Technologies SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.60 EUR
Mindestbestellmenge: 1000
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SPI11N60C3XKSA1 SPI11N60C3XKSA1 Infineon Technologies Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3 Description: SPI11N60C3 - 600V COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
205+2.48 EUR
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SPI11N60S5 SPI11N60S5 Infineon Technologies Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 368 Stücke:
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.92 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 19
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
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40+1.79 EUR
43+1.69 EUR
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 Infineon Technologies Infineon_SPP_I_A11N60C3_DS_v03_03_EN-3363801.pdf MOSFETs N-Ch 600V 11A TO220-3
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.83 EUR
10+2.94 EUR
100+2.66 EUR
500+2.08 EUR
1000+2.02 EUR
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 Infineon Technologies SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 500 Stücke:
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4+5.86 EUR
50+2.96 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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SPW11N60C3FKSA1 SPW11N60C3FKSA1 Infineon Technologies SPW11N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d87b14893 Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 231560 Stücke:
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166+3.05 EUR
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SPW11N60CFDFKSA1 SPW11N60CFDFKSA1 Infineon Technologies SPW11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e5f1849b3 Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4034 Stücke:
Lieferzeit 10-14 Tag (e)
160+3.17 EUR
Mindestbestellmenge: 160
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SPW11N60S5 SPW11N60S5 Infineon Technologies Infineon-SPW11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42d87b14893 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 14009 Stücke:
Lieferzeit 10-14 Tag (e)
160+3.17 EUR
Mindestbestellmenge: 160
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STD11N60DM2 STD11N60DM2 STMicroelectronics en.DM00299437.pdf Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1354 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+2.47 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.23 EUR
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STD11N60DM2 STD11N60DM2 STMicroelectronics std11n60dm2-1850365.pdf MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.84 EUR
10+2.46 EUR
100+1.67 EUR
500+1.33 EUR
1000+1.22 EUR
2500+1.06 EUR
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
48+1.52 EUR
52+1.39 EUR
54+1.33 EUR
Mindestbestellmenge: 33
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
48+1.52 EUR
52+1.39 EUR
54+1.33 EUR
250+1.29 EUR
500+1.26 EUR
Mindestbestellmenge: 33
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STF11N60DM2 STF11N60DM2 STMicroelectronics stf11n60dm2-1850418.pdf MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 122-126 Tag (e)
1+4.03 EUR
10+1.95 EUR
100+1.78 EUR
250+1.76 EUR
500+1.45 EUR
1000+1.34 EUR
2000+1.24 EUR
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STF11N60M2-EP STF11N60M2-EP STMicroelectronics en.DM00286212.pdf Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.38 EUR
100+1.62 EUR
500+1.29 EUR
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STF11N60M2-EP STF11N60M2-EP STMicroelectronics stf11n60m2_ep-1850740.pdf MOSFETs N-channel 600 V, 0.550 Ohm typ 7.5 A MDmesh M2 EP Power MOSFET
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.70 EUR
10+2.38 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.09 EUR
2000+1.07 EUR
5000+1.05 EUR
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STP11N60DM2 STP11N60DM2 STMicroelectronics stp11n60dm2-1851411.pdf MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 1775 Stücke:
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1+2.97 EUR
10+1.55 EUR
100+1.47 EUR
250+1.46 EUR
500+1.43 EUR
1000+1.31 EUR
2000+1.19 EUR
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STP11N60DM2 STP11N60DM2 STMicroelectronics en.DM00299439.pdf Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
50+1.96 EUR
100+1.76 EUR
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WMO11N60C2 WMO11N60C2 WAYON WMx11N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2116 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
93+0.77 EUR
106+0.68 EUR
117+0.62 EUR
123+0.58 EUR
500+0.56 EUR
Mindestbestellmenge: 69
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FCB11N60 fairchild to-263/d2-pak
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
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FCB11N60 fairchild 07+ to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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FCB11N60F fairchild to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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FCPF11N60/FSC FSC 08+;
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60NT ON Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw fcpf11n60nt-d.pdf
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
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INF-SPP11N60C3 SPP11N60C3 Микросхемы
auf Bestellung 96 Stücke:
Lieferzeit 7-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
11N60
Hersteller: SIEMENS
TO220
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
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11N60C3
Hersteller: INFINEON
09+ DIP-3
auf Bestellung 2162 Stücke:
Lieferzeit 21-28 Tag (e)
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11N60S5
TO-263
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOW11N60 AOW11N60.pdf
AOW11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
auf Bestellung 697 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
88+0.82 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 76
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AOW11N60 AOW11N60.pdf
AOW11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 697 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.94 EUR
88+0.82 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
AOW11N60 AOW11N60.pdf
AOW11N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
50+1.71 EUR
100+1.55 EUR
500+1.27 EUR
Mindestbestellmenge: 6
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AOWF11N60 AOWF11N60.pdf
AOWF11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
100+0.72 EUR
103+0.70 EUR
Mindestbestellmenge: 87
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AOWF11N60 AOWF11N60.pdf
AOWF11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 710 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
87+0.83 EUR
100+0.72 EUR
103+0.70 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
FCB11N60TM fcb11n60-d.pdf
FCB11N60TM
Hersteller: onsemi / Fairchild
MOSFETs HIGH POWER
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.95 EUR
10+4.63 EUR
100+3.29 EUR
800+2.68 EUR
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FCB11N60TM fcb11n60-d.pdf
FCB11N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.92 EUR
Mindestbestellmenge: 800
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FCB11N60TM fcb11n60-d.pdf
FCB11N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.20 EUR
10+4.75 EUR
100+3.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCI11N60 FAIRS27283-1.pdf?t.download=true&u=5oefqw
FCI11N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 64279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
249+2.04 EUR
Mindestbestellmenge: 249
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FCP11N60 FCP11N60.pdf
FCP11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
24+3.02 EUR
28+2.59 EUR
30+2.46 EUR
Mindestbestellmenge: 22
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FCP11N60 FCP11N60.pdf
FCP11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.39 EUR
24+3.02 EUR
28+2.59 EUR
30+2.46 EUR
250+2.36 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60 fcpf11n60t-d.pdf
FCP11N60
Hersteller: onsemi / Fairchild
MOSFETs 600V 11A N-CH
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.49 EUR
50+3.19 EUR
100+2.90 EUR
500+2.48 EUR
1000+2.38 EUR
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FCP11N60 fcpf11n60t-d.pdf
FCP11N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 6630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
50+3.25 EUR
100+2.97 EUR
500+2.52 EUR
Mindestbestellmenge: 3
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FCP11N60F fcp11n60f-d.pdf
FCP11N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
50+3.56 EUR
100+3.23 EUR
500+2.65 EUR
1000+2.48 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCP11N60F fcp11n60f-d.pdf
FCP11N60F
Hersteller: onsemi / Fairchild
MOSFETs 600V NCH MOSFET
auf Bestellung 5598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.37 EUR
10+4.70 EUR
50+2.85 EUR
100+2.69 EUR
500+2.57 EUR
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FCP11N60N FAIRS46027-1.pdf?t.download=true&u=5oefqw
FCP11N60N
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.93 EUR
Mindestbestellmenge: 173
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FCPF11N60 description FCP11N60.pdf
FCPF11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 23
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FCPF11N60 description fcpf11n60t-d.pdf
Hersteller: ON-Semicoductor
N-MOSFET 11A 600V 36W 0.38Ω FCPF11N60 TFCPF11N60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.81 EUR
Mindestbestellmenge: 10
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FCPF11N60 description FCP11N60.pdf
FCPF11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.19 EUR
32+2.26 EUR
34+2.13 EUR
500+2.06 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60 description fcpf11n60t-d.pdf
FCPF11N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.00 EUR
50+3.59 EUR
100+3.26 EUR
500+2.68 EUR
1000+2.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60 description fcpf11n60t-d.pdf
FCPF11N60
Hersteller: onsemi / Fairchild
MOSFETs 600V 11A N-CH
auf Bestellung 8761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.49 EUR
10+4.47 EUR
50+2.90 EUR
100+2.76 EUR
500+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.64 EUR
50+3.94 EUR
100+3.59 EUR
500+2.96 EUR
Mindestbestellmenge: 3
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FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: onsemi / Fairchild
MOSFETs 600V NCH MOSFET
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.02 EUR
10+6.99 EUR
50+3.75 EUR
100+3.40 EUR
500+2.90 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60NT FAIRS46027-1.pdf?t.download=true&u=5oefqw
FCPF11N60NT
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 14218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
135+3.76 EUR
Mindestbestellmenge: 135
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FCPF11N60T fcpf11n60t-d.pdf
FCPF11N60T
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
50+3.78 EUR
100+3.43 EUR
500+2.83 EUR
Mindestbestellmenge: 3
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SIHH11N60E-T1-GE3 sihh11n60e.pdf
SIHH11N60E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
auf Bestellung 2371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.68 EUR
10+4.24 EUR
100+3.45 EUR
500+3.06 EUR
1000+2.62 EUR
3000+2.46 EUR
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SiHH11N60EF-T1-GE3 sihh11n60ef.pdf
SiHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 1405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.27 EUR
10+5.48 EUR
100+3.90 EUR
500+3.23 EUR
1000+3.01 EUR
Mindestbestellmenge: 3
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SPA11N60C3 Infineon_SPP_I_A11N60C3_E8185_DS_v03_03_EN-1732247.pdf
SPA11N60C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 11A TO220FP-3 CoolMOS C3
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.65 EUR
10+4.56 EUR
25+3.26 EUR
100+3.01 EUR
250+2.85 EUR
500+2.59 EUR
1000+2.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
SPA11N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
50+3.15 EUR
100+2.85 EUR
500+2.33 EUR
Mindestbestellmenge: 3
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SPB11N60C3 Infineon_SPB11N60C3_DS_v02_06_en-3360040.pdf
SPB11N60C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 11A D2PAK-2 CoolMOS C3
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.86 EUR
10+4.72 EUR
25+4.61 EUR
100+3.34 EUR
500+2.75 EUR
1000+2.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
SPB11N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 3507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.20 EUR
10+4.75 EUR
100+3.36 EUR
500+2.76 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
SPB11N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.60 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
SPI11N60C3XKSA1 Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3
SPI11N60C3XKSA1
Hersteller: Infineon Technologies
Description: SPI11N60C3 - 600V COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
205+2.48 EUR
Mindestbestellmenge: 205
Im Einkaufswagen  Stück im Wert von  UAH
SPI11N60S5 Infineon-SPP_I_A11N60C3_E8185-DS-v03_03-EN.pdf?fileId=db3a3043163797a6011638a2fdee01a3
SPI11N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
260+1.94 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.92 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.92 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 Infineon_SPP_I_A11N60C3_DS_v03_03_EN-3363801.pdf
SPP11N60C3XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 11A TO220-3
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.83 EUR
10+2.94 EUR
100+2.66 EUR
500+2.08 EUR
1000+2.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
50+2.96 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N60C3FKSA1 SPW11N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d87b14893
SPW11N60C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 231560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
166+3.05 EUR
Mindestbestellmenge: 166
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N60CFDFKSA1 SPW11N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e5f1849b3
SPW11N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
160+3.17 EUR
Mindestbestellmenge: 160
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N60S5 Infineon-SPW11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42d87b14893
SPW11N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 14009 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
160+3.17 EUR
Mindestbestellmenge: 160
Im Einkaufswagen  Stück im Wert von  UAH
STD11N60DM2 en.DM00299437.pdf
STD11N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.47 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.23 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STD11N60DM2 std11n60dm2-1850365.pdf
STD11N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.84 EUR
10+2.46 EUR
100+1.67 EUR
500+1.33 EUR
1000+1.22 EUR
2500+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
48+1.52 EUR
52+1.39 EUR
54+1.33 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.17 EUR
48+1.52 EUR
52+1.39 EUR
54+1.33 EUR
250+1.29 EUR
500+1.26 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
STF11N60DM2 stf11n60dm2-1850418.pdf
STF11N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl Preis
1+4.03 EUR
10+1.95 EUR
100+1.78 EUR
250+1.76 EUR
500+1.45 EUR
1000+1.34 EUR
2000+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STF11N60M2-EP en.DM00286212.pdf
STF11N60M2-EP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.38 EUR
100+1.62 EUR
500+1.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STF11N60M2-EP stf11n60m2_ep-1850740.pdf
STF11N60M2-EP
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.550 Ohm typ 7.5 A MDmesh M2 EP Power MOSFET
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.70 EUR
10+2.38 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.09 EUR
2000+1.07 EUR
5000+1.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STP11N60DM2 stp11n60dm2-1851411.pdf
STP11N60DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 1775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.97 EUR
10+1.55 EUR
100+1.47 EUR
250+1.46 EUR
500+1.43 EUR
1000+1.31 EUR
2000+1.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STP11N60DM2 en.DM00299439.pdf
STP11N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
50+1.96 EUR
100+1.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N60C2 WMx11N60C2.pdf
WMO11N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
93+0.77 EUR
106+0.68 EUR
117+0.62 EUR
123+0.58 EUR
500+0.56 EUR
Mindestbestellmenge: 69
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FCB11N60
Hersteller: fairchild
to-263/d2-pak
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
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FCB11N60
Hersteller: fairchild
07+ to-263/d2-pak
auf Bestellung 30000 Stücke:
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FCB11N60F
Hersteller: fairchild
to-263/d2-pak
auf Bestellung 30000 Stücke:
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FCPF11N60/FSC
Hersteller: FSC
08+;
auf Bestellung 2500 Stücke:
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FCPF11N60NT FAIRS46027-1.pdf?t.download=true&u=5oefqw fcpf11n60nt-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 950 Stücke:
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INF-SPP11N60C3
SPP11N60C3 Микросхемы
auf Bestellung 96 Stücke:
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