Hersteller: Central Semiconductor
JFETs 8V,10mA,360mW Through-Hole JFET N Channel

Hersteller: Central Semiconductor
JFETs N-CH -25V 10mA BULK 25Vgs 360mW 8pF

Hersteller: Central Semiconductor
JFETs 8V,10mA,360mW Through-Hole JFET N Channel

Hersteller: Central Semiconductor
JFETs 8V,10mA,360mW Through-Hole JFET N Channel

Hersteller: ONSEMI
Description: ONSEMI - J112 - JFET-Transistor, -35 V, -5 V, TO-92, 3 Pins, 150 °C
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drainstrom bei Gate-Nullspannung, max.: -
MSL: MSL 1 - unbegrenzt
Drainstrom bei Gate-Nullspannung Idss, min.: 5mA
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-92
Anzahl der Pins: 3 Pins
Gate/Source-Durchbruchspannung, max.: -35V
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Transistortyp: JFET
Betriebstemperatur, max.: 150°C
Gate-Source-Sperrspannung, max.: -5V

Hersteller: ONSEMI
Description: ONSEMI - MMBFJ111 - JFET-Transistor, JFET, -35 V, -10 V, SOT-23, 3 Pins, 150 °C
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drainstrom bei Gate-Nullspannung, max.: -
MSL: MSL 1 - unbegrenzt
Drainstrom bei Gate-Nullspannung Idss, min.: 20mA
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3 Pins
Gate/Source-Durchbruchspannung, max.: -35V
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Transistortyp: JFET
Betriebstemperatur, max.: 150°C
Gate-Source-Sperrspannung, max.: -10V

Hersteller: FS
Transistoren > MOSFET N-CH
Gehäuse: TO-92
Drain-Source-Spannung Uds, V: 25 V
Drain-Strom Idd, A: 0,025 A
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 8/ -
Bemerkung: 450 mHz
Montage: THT

Hersteller: Vishay / Siliconix
JFETs N-CH -25V 10mA BULK

Hersteller: onsemi
JFETs 25V 10mA

Hersteller: Central Semiconductor Corp
Description: RF MOSFET JFET 25V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 25 V

Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Current Rating (Amps): 100mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92 (TO-226)
Voltage - Rated: 25 V

Hersteller: Central Semiconductor Corp
Description: 8V 10MA 360MW TH JFET N CHANNEL
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Drain to Source Voltage (Vdss): 25 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V

Hersteller: Central Semiconductor Corp
Description: 8V 10MA 360MW TH JFET N CHANNEL
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Drain to Source Voltage (Vdss): 25 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V

Hersteller: Central Semiconductor
JFETs 8V,10mA,360mW Through-Hole JFET N Channel

Hersteller: Central Semiconductor
Trans RF FET N-CH 25V Si 3-Pin TO-92 Box

Hersteller: Central Semiconductor Corp
Description: 8V 10MA 360MW TH JFET N CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Drain to Source Voltage (Vdss): 25 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V

Hersteller: Central Semiconductor
2N3819 TRE PBFREE

Hersteller: Central Semiconductor Corp
Description: 8V 10MA 360MW TH JFET N CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Drain to Source Voltage (Vdss): 25 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V

Hersteller: Central Semiconductor
JFETs 8V,10mA,360mW Through-Hole JFET N Channel

Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 25 V

Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Obsolete
Voltage - Rated: 25 V