Suchergebnisse für "2sc57" : 166

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2SC5706-H 2SC5706-H ON Semiconductor 439en6912-d.pdf Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) IPAK Bag
Produkt ist nicht verfügbar
2SC5706-P-E 2SC5706-P-E onsemi Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
2SC5706-P-TL-E 2SC5706-P-TL-E onsemi Description: TRANS NPN 100V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
2SC5706-TL-E 2SC5706-TL-E ON Semiconductor en6912-d.pdf Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5706-TL-H ONSEMI en6912-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
2SC5706-TL-H ONSEMI en6912-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
2SC5706-TL-H 2SC5706-TL-H ON Semiconductor 439en6912-d.pdf Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5706-TL-H 2SC5706-TL-H ON Semiconductor en6912-d.pdf Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5706-TL-H 2SC5706-TL-H ON Semiconductor en6912-d.pdf Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5707-E 2SC5707-E onsemi en6913-d.pdf Description: TRANS NPN 50V 8A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2SC5707-E 2SC5707-E ON Semiconductor 1972en6913-d.pdf Trans GP BJT NPN 50V 8A 1000mW 3-Pin(3+Tab) IPAK Bag
Produkt ist nicht verfügbar
2SC5707-TL-E 2SC5707-TL-E ON Semiconductor 1972en6913-d.pdf Trans GP BJT NPN 50V 8A 1000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5707-TL-E 2SC5707-TL-E ON Semiconductor 2sa2040-d.pdf Trans GP BJT NPN 50V 8A 1000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba 15832sc5712_datasheet_en_20131101.pdf.pdf Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba 15832sc5712_datasheet_en_20131101.pdf.pdf Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 2SC5712(TE12L,F) Toshiba 15832sc5712_datasheet_en_20131101.pdf.pdf Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
2SC5714(TE12L,ZF) 2SC5714(TE12L,ZF) Toshiba Semiconductor and Storage 2SC5714_datasheet_en_20131101.pdf?did=20744&prodName=2SC5714 Description: TRANS NPN 20V 4A PW-MINI
Packaging: Box
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2SC57250SL 2SC57250SL Panasonic Electronic Components 2SC5725.pdf Description: TRANS NPN 15V 2A MINI3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: Mini3-G1
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
2SC5729T106Q 2SC5729T106Q Rohm Semiconductor Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
2SC5729T106Q ROHM Semiconductor rohm_semiconductor_rohms30304-1-1742682.pdf Bipolar Transistors - BJT NPN
Produkt ist nicht verfügbar
2SC5729T106R 2SC5729T106R Rohm Semiconductor Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
2SC5729T106R ROHM Semiconductor rohm_semiconductor_rohms30304-1-1742682.pdf Bipolar Transistors - BJT NPN
Produkt ist nicht verfügbar
2SC5731T100Q 2SC5731T100Q Rohm Semiconductor Transistor%20Catalog%202005.pdf#page=4 Description: TRANS NPN 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
2SC5731T100R 2SC5731T100R Rohm Semiconductor Transistor%20Catalog%202005.pdf#page=4 Description: TRANS NPN 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
2SC5732TLQ 2SC5732TLQ Rohm Semiconductor Description: TRANS NPN 30V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
2SC5738 (TE85L,F) 2SC5738 (TE85L,F) Toshiba 15932sc5738_datasheet_en_20131101.pdf.pdf Trans GP BJT NPN 20V 3.5A 625mW 3-Pin TSM T/R
Produkt ist nicht verfügbar
2SC5738(TE85LF) Toshiba Toshiba
Produkt ist nicht verfügbar
2SC57390P 2SC57390P Panasonic Electronic Components 2SC5739.pdf Description: TRANS NPN 60V 3A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 375mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 4V
Frequency - Transition: 180MHz
Supplier Device Package: TO-220D-A1
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
2SC5750-A 2SC5750-A CEL Description: RF TRANS NPN 6V 15GHZ SOT343
Packaging: Strip
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5750-T1-A 2SC5750-T1-A CEL ne67718.pdf Description: RF TRANS NPN 6V 15GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
Produkt ist nicht verfügbar
2SC5751-A 2SC5751-A CEL Description: RF TRANS NPN 6V 15GHZ SOT343F
Packaging: Strip
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5751-T2-A 2SC5751-T2-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 6V 15GHZ SOT343F
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5752-A 2SC5752-A CEL Description: RF TRANS NPN 6V 12GHZ SOT343
Packaging: Strip
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5752-T1-A 2SC5752-T1-A CEL RNCCS06399-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 6V 12GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
Produkt ist nicht verfügbar
2SC5752-T1-A 2SC5752-T1-A Renesas 1818276830505969p15658ej1v0ds00.pdf NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
Produkt ist nicht verfügbar
2SC5753-A 2SC5753-A CEL NE678M04.pdf Description: RF TRANS NPN 6V 12GHZ SOT343F
Packaging: Strip
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5753-T2-A 2SC5753-T2-A CEL NE678M04.pdf Description: RF TRANS NPN 6V 12GHZ SOT343F
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5753-T2-A 2SC5753-T2-A CEL NE678M04.pdf Description: RF TRANS NPN 6V 12GHZ SOT343F
Packaging: Cut Tape (CT)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5754-A 2SC5754-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 5V 20GHZ SOT343F
Packaging: Strip
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 735mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Frequency - Transition: 20GHz
Produkt ist nicht verfügbar
2SC5754-T2-A 2SC5754-T2-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 5V 20GHZ SOT343F
Packaging: Cut Tape (CT)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6.5dB
Power - Max: 735mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Frequency - Transition: 20GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5754-T2-A 2SC5754-T2-A CEL RF-Wireless-Brochure.pdf Description: RF TRANS NPN 5V 20GHZ SOT343F
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6.5dB
Power - Max: 735mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Frequency - Transition: 20GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5754-T2-A Renesas 1788695729747916pu10008ej02v0ds.pdf Trans RF BJT NPN 5V 0.5A 4-Pin Thin-Type Super Mini-Mold T/R
Produkt ist nicht verfügbar
2SC5784(TE85LF) Toshiba Toshiba
Produkt ist nicht verfügbar
2SC57880QA 2SC57880QA Panasonic Electronic Components 2SC5788.pdf Description: TRANS NPN 60V 3A MT-4
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 375mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 4V
Frequency - Transition: 180MHz
Supplier Device Package: MT-4-A1
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
2SC5706-H 439en6912-d.pdf
2SC5706-H
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) IPAK Bag
Produkt ist nicht verfügbar
2SC5706-P-E
2SC5706-P-E
Hersteller: onsemi
Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
2SC5706-P-TL-E
2SC5706-P-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
2SC5706-TL-E en6912-d.pdf
2SC5706-TL-E
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5706-TL-H en6912-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
2SC5706-TL-H en6912-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
2SC5706-TL-H 439en6912-d.pdf
2SC5706-TL-H
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5706-TL-H en6912-d.pdf
2SC5706-TL-H
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5706-TL-H en6912-d.pdf
2SC5706-TL-H
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5707-E en6913-d.pdf
2SC5707-E
Hersteller: onsemi
Description: TRANS NPN 50V 8A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2SC5707-E 1972en6913-d.pdf
2SC5707-E
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 8A 1000mW 3-Pin(3+Tab) IPAK Bag
Produkt ist nicht verfügbar
2SC5707-TL-E 1972en6913-d.pdf
2SC5707-TL-E
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 8A 1000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5707-TL-E 2sa2040-d.pdf
2SC5707-TL-E
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 8A 1000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 15832sc5712_datasheet_en_20131101.pdf.pdf
2SC5712(TE12L,F)
Hersteller: Toshiba
Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 15832sc5712_datasheet_en_20131101.pdf.pdf
2SC5712(TE12L,F)
Hersteller: Toshiba
Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
2SC5712(TE12L,F) 15832sc5712_datasheet_en_20131101.pdf.pdf
2SC5712(TE12L,F)
Hersteller: Toshiba
Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
2SC5714(TE12L,ZF) 2SC5714_datasheet_en_20131101.pdf?did=20744&prodName=2SC5714
2SC5714(TE12L,ZF)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 4A PW-MINI
Packaging: Box
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2SC57250SL 2SC5725.pdf
2SC57250SL
Hersteller: Panasonic Electronic Components
Description: TRANS NPN 15V 2A MINI3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: Mini3-G1
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
2SC5729T106Q
2SC5729T106Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
2SC5729T106Q rohm_semiconductor_rohms30304-1-1742682.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN
Produkt ist nicht verfügbar
2SC5729T106R
2SC5729T106R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
2SC5729T106R rohm_semiconductor_rohms30304-1-1742682.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN
Produkt ist nicht verfügbar
2SC5731T100Q Transistor%20Catalog%202005.pdf#page=4
2SC5731T100Q
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
2SC5731T100R Transistor%20Catalog%202005.pdf#page=4
2SC5731T100R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
2SC5732TLQ
2SC5732TLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
2SC5738 (TE85L,F) 15932sc5738_datasheet_en_20131101.pdf.pdf
2SC5738 (TE85L,F)
Hersteller: Toshiba
Trans GP BJT NPN 20V 3.5A 625mW 3-Pin TSM T/R
Produkt ist nicht verfügbar
2SC5738(TE85LF)
Hersteller: Toshiba
Toshiba
Produkt ist nicht verfügbar
2SC57390P 2SC5739.pdf
2SC57390P
Hersteller: Panasonic Electronic Components
Description: TRANS NPN 60V 3A TO220D-A1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 375mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 4V
Frequency - Transition: 180MHz
Supplier Device Package: TO-220D-A1
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
2SC5750-A
2SC5750-A
Hersteller: CEL
Description: RF TRANS NPN 6V 15GHZ SOT343
Packaging: Strip
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5750-T1-A ne67718.pdf
2SC5750-T1-A
Hersteller: CEL
Description: RF TRANS NPN 6V 15GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
Produkt ist nicht verfügbar
2SC5751-A
2SC5751-A
Hersteller: CEL
Description: RF TRANS NPN 6V 15GHZ SOT343F
Packaging: Strip
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5751-T2-A RF-Wireless-Brochure.pdf
2SC5751-T2-A
Hersteller: CEL
Description: RF TRANS NPN 6V 15GHZ SOT343F
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5752-A
2SC5752-A
Hersteller: CEL
Description: RF TRANS NPN 6V 12GHZ SOT343
Packaging: Strip
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5752-T1-A RNCCS06399-1.pdf?t.download=true&u=5oefqw
2SC5752-T1-A
Hersteller: CEL
Description: RF TRANS NPN 6V 12GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
Produkt ist nicht verfügbar
2SC5752-T1-A 1818276830505969p15658ej1v0ds00.pdf
2SC5752-T1-A
Hersteller: Renesas
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
Produkt ist nicht verfügbar
2SC5753-A NE678M04.pdf
2SC5753-A
Hersteller: CEL
Description: RF TRANS NPN 6V 12GHZ SOT343F
Packaging: Strip
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Produkt ist nicht verfügbar
2SC5753-T2-A NE678M04.pdf
2SC5753-T2-A
Hersteller: CEL
Description: RF TRANS NPN 6V 12GHZ SOT343F
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5753-T2-A NE678M04.pdf
2SC5753-T2-A
Hersteller: CEL
Description: RF TRANS NPN 6V 12GHZ SOT343F
Packaging: Cut Tape (CT)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5754-A RF-Wireless-Brochure.pdf
2SC5754-A
Hersteller: CEL
Description: RF TRANS NPN 5V 20GHZ SOT343F
Packaging: Strip
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 735mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Frequency - Transition: 20GHz
Produkt ist nicht verfügbar
2SC5754-T2-A RF-Wireless-Brochure.pdf
2SC5754-T2-A
Hersteller: CEL
Description: RF TRANS NPN 5V 20GHZ SOT343F
Packaging: Cut Tape (CT)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6.5dB
Power - Max: 735mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Frequency - Transition: 20GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5754-T2-A RF-Wireless-Brochure.pdf
2SC5754-T2-A
Hersteller: CEL
Description: RF TRANS NPN 5V 20GHZ SOT343F
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 6.5dB
Power - Max: 735mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Frequency - Transition: 20GHz
Supplier Device Package: SOT-343F
Produkt ist nicht verfügbar
2SC5754-T2-A 1788695729747916pu10008ej02v0ds.pdf
Hersteller: Renesas
Trans RF BJT NPN 5V 0.5A 4-Pin Thin-Type Super Mini-Mold T/R
Produkt ist nicht verfügbar
2SC5784(TE85LF)
Hersteller: Toshiba
Toshiba
Produkt ist nicht verfügbar
2SC57880QA 2SC5788.pdf
2SC57880QA
Hersteller: Panasonic Electronic Components
Description: TRANS NPN 60V 3A MT-4
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 375mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 4V
Frequency - Transition: 180MHz
Supplier Device Package: MT-4-A1
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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