Suchergebnisse für "3080k" : 43

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SCT3080KLGC11 ROHM - Japan datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm SCT3080KLGC11 TSCT3080klgc11
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+51.32 EUR
Mindestbestellmenge: 2
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SCT3080KLGC11 SCT3080KLGC11 ROHM Semiconductor datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
auf Bestellung 588 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.35 EUR
10+30.5 EUR
25+21.58 EUR
100+21.52 EUR
450+21.44 EUR
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SCT3080KLGC11 SCT3080KLGC11 Rohm Semiconductor datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 254 Stücke:
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1+30.5 EUR
30+20.99 EUR
120+20.07 EUR
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SCT3080KLHRC11 SCT3080KLHRC11 ROHM Semiconductor datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
auf Bestellung 419 Stücke:
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10+36.1 EUR
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SCT3080KLHRC11 SCT3080KLHRC11 Rohm Semiconductor datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 756 Stücke:
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1+34.51 EUR
30+28.11 EUR
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SCT3080KRC14 SCT3080KRC14 Rohm Semiconductor datasheet?p=SCT3080KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 265 Stücke:
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30+17.04 EUR
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SCT3080KRC14 SCT3080KRC14 ROHM Semiconductor datasheet?p=SCT3080KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key SiC MOSFETs TO247 1.2KV 31A N-CH SIC
auf Bestellung 169 Stücke:
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1+26.22 EUR
10+25.7 EUR
25+16.09 EUR
100+16 EUR
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SCT3080KRC15 SCT3080KRC15 ROHM Semiconductor sct3080kr-e.pdf SiC MOSFETs TO247 1.2KV 31A N-CH SIC
auf Bestellung 95 Stücke:
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1+18.6 EUR
10+16.33 EUR
100+14.12 EUR
250+13.69 EUR
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SCT3080KRHRC15 SCT3080KRHRC15 ROHM Semiconductor sct3080krhr-e.pdf SiC MOSFETs Transistor SiC MOSFET 1200V 80mohm 3rd Gen TO-247-4L
auf Bestellung 359 Stücke:
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1+19.15 EUR
10+16.81 EUR
100+14.54 EUR
250+14.08 EUR
450+14.06 EUR
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SCT3080KW7TL SCT3080KW7TL ROHM Semiconductor datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key SiC MOSFETs TO263 1.2KV 30A N-CH SIC
auf Bestellung 409 Stücke:
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1+28.11 EUR
10+21.38 EUR
25+21.37 EUR
100+20.05 EUR
1000+18.67 EUR
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SCT3080KW7TL SCT3080KW7TL Rohm Semiconductor datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.46 EUR
10+20.97 EUR
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BDX-703080KW
auf Bestellung 3 Stücke:
Lieferzeit 7-21 Tag (e)
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3080 3080 Keystone Electronics M65p9.pdf Description: BATTERY RETAINER COIN 12MM SMD
Packaging: Bulk
Battery Cell Size: Coin, 12.0mm
Number of Cells: 1
Mounting Type: PCB, Surface Mount
Style: Retainer
Termination Style: SMD (SMT) Tab
Height Above Board: 0.125" (3.17mm)
Battery Series: 1216, 1220, 1225
Battery Type, Function: Coin Cell, Retainer
auf Bestellung 34466 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
29+0.61 EUR
2500+0.56 EUR
5000+0.32 EUR
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3080 3080 KEYSTONE 1726105.pdf Description: KEYSTONE - 3080 - BATTERY CONTACT, POSITION, 12MM CELL, SURFACE MT
tariffCode: 85369095
Passende Batterie-/Akkugröße: Coin Cell - 12mm
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
Batteriehaltermontage: PCB
Anzahl der Batterien/Akkus: 1
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Produktpalette: -
auf Bestellung 389 Stücke:
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NCE3080K
Produktcode: 211602
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Transistoren > MOSFET N-CH
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1330-80K 1330-80K Delevan page21_1330.pdf Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.313" L x 0.115" W (7.94mm x 2.92mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
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1330-80K 1330-80K Delevan page21_1330-3359666.pdf RF Inductors - SMD 330uH 10% 7ohm Unshielded SMT Ind
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CFP3080KSB CFP3080KSB Conductive Containers, Inc. Standard%20_%20Mailers.pdf Description: MAILER7 X 5 X 1.5
Features: Conductive
Packaging: Box
Material: Plastic
Type: Box
Dimensions - Overall: 7.00" L x 5.00" W x 1.50" H (177.8mm x 127.0mm x 38.1mm)
Usage: Storage, Transport
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M1330-80K Delevan m1330.pdf Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.320" L x 0.125" W (8.13mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
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M1330-80K M1330-80K Delevan m1330-3359638.pdf RF Inductors - SMD M83446/25-13F, Surface Mount, Inductor, 330 uH , +/- 10%
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MIL1330-80K Delevan page22_mil1330.pdf Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.325" L x 0.125" W (8.26mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
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MIL1330-80K MIL1330-80K Delevan page22_mil1330-3359716.pdf RF Inductors - SMD M83446/33-13F, Surface Mount, Unshielded Inductor, 330 uH , +/- 10%
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MKP1848H53080KK2 MKP1848H53080KK2 Vishay Beyschlag/Draloric/BC Components mkp1848hdcl.pdf Description: CAP FILM 3UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.012" (25.70mm)
Part Status: Active
Capacitance: 3 µF
ESR (Equivalent Series Resistance): 12.3 mOhms
Size / Dimension: 1.260" L x 0.591" W (32.00mm x 15.00mm)
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MKP1848H53080KK2 MKP1848H53080KK2 Vishay mkp1848hdcl.pdf Film Capacitors MKP1848H 3 F 10 800V=
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MKP1848H63080KY2 MKP1848H63080KY2 Vishay mkp1848hdcl.pdf Film Capacitors MKP1848H 30 F 10 800V=
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MKP1848H63080KY2 MKP1848H63080KY2 Vishay Beyschlag/Draloric/BC Components mkp1848hdcl.pdf Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5.6 MOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
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MKP1848H63080KY5 MKP1848H63080KY5 Vishay mkp1848hdcl.pdf Film Capacitors MKP1848H 30 F 10 800V=
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MKP1848H63080KY5 MKP1848H63080KY5 Vishay Beyschlag/Draloric/BC Components mkp1848hdcl.pdf Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial - 4 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
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P3080KIT Eaton Tripp Lite Description: P3080KIT PARALLELING CABLE KIT
Packaging: Bulk
Part Status: Active
For Use With/Related Products: UPS Systems
Accessory Type: Mounting Kit
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SCT3080KLGC11 ROHM SEMICONDUCTOR datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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SCT3080KLGC11 ROHM SEMICONDUCTOR datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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SCT3080KLHRC11 ROHM SEMICONDUCTOR datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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SCT3080KLHRC11 ROHM SEMICONDUCTOR datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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SCT3080KRC15 SCT3080KRC15 Rohm Semiconductor sct3080kr-e.pdf Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3080KRHRC15 SCT3080KRHRC15 Rohm Semiconductor sct3080krhr-e.pdf Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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SCT3080KW7TL ROHM SEMICONDUCTOR datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT3080KW7TL SCT3080KW7TL Rohm Semiconductor datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3080KW7TL ROHM SEMICONDUCTOR datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
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BDJ2GA3MEFJ-LBH2 BDJ2GA3MEFJ-LBH2 ROHM Semiconductor bdxxga3mefj-lb-e LDO Voltage Regulators 300mA 14-4.5 Vin LDO Industrial HTSOP-J8
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EP3CLS70F780I7N EP3CLS70F780I7N Altera cyc3_ciii51001-1299430.pdf FPGA - Field Programmable Gate Array
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SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM - Japan
SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm SCT3080KLGC11 TSCT3080klgc11
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+51.32 EUR
Mindestbestellmenge: 2
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SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KLGC11
Hersteller: ROHM Semiconductor
SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
auf Bestellung 588 Stücke:
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Anzahl Preis
1+31.35 EUR
10+30.5 EUR
25+21.58 EUR
100+21.52 EUR
450+21.44 EUR
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SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KLGC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 254 Stücke:
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Anzahl Preis
1+30.5 EUR
30+20.99 EUR
120+20.07 EUR
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SCT3080KLHRC11 datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KLHRC11
Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
auf Bestellung 419 Stücke:
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Anzahl Preis
1+43.21 EUR
10+36.1 EUR
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SCT3080KLHRC11 datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KLHRC11
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 756 Stücke:
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Anzahl Preis
1+34.51 EUR
30+28.11 EUR
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SCT3080KRC14 datasheet?p=SCT3080KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KRC14
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 265 Stücke:
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Anzahl Preis
1+27.4 EUR
30+17.04 EUR
120+14.97 EUR
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SCT3080KRC14 datasheet?p=SCT3080KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KRC14
Hersteller: ROHM Semiconductor
SiC MOSFETs TO247 1.2KV 31A N-CH SIC
auf Bestellung 169 Stücke:
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Anzahl Preis
1+26.22 EUR
10+25.7 EUR
25+16.09 EUR
100+16 EUR
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SCT3080KRC15 sct3080kr-e.pdf
SCT3080KRC15
Hersteller: ROHM Semiconductor
SiC MOSFETs TO247 1.2KV 31A N-CH SIC
auf Bestellung 95 Stücke:
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Anzahl Preis
1+18.6 EUR
10+16.33 EUR
100+14.12 EUR
250+13.69 EUR
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SCT3080KRHRC15 sct3080krhr-e.pdf
SCT3080KRHRC15
Hersteller: ROHM Semiconductor
SiC MOSFETs Transistor SiC MOSFET 1200V 80mohm 3rd Gen TO-247-4L
auf Bestellung 359 Stücke:
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Anzahl Preis
1+19.15 EUR
10+16.81 EUR
100+14.54 EUR
250+14.08 EUR
450+14.06 EUR
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SCT3080KW7TL datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KW7TL
Hersteller: ROHM Semiconductor
SiC MOSFETs TO263 1.2KV 30A N-CH SIC
auf Bestellung 409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.11 EUR
10+21.38 EUR
25+21.37 EUR
100+20.05 EUR
1000+18.67 EUR
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SCT3080KW7TL datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KW7TL
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 772 Stücke:
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Anzahl Preis
1+27.46 EUR
10+20.97 EUR
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BDX-703080KW
auf Bestellung 3 Stücke:
Lieferzeit 7-21 Tag (e)
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3080 M65p9.pdf
3080
Hersteller: Keystone Electronics
Description: BATTERY RETAINER COIN 12MM SMD
Packaging: Bulk
Battery Cell Size: Coin, 12.0mm
Number of Cells: 1
Mounting Type: PCB, Surface Mount
Style: Retainer
Termination Style: SMD (SMT) Tab
Height Above Board: 0.125" (3.17mm)
Battery Series: 1216, 1220, 1225
Battery Type, Function: Coin Cell, Retainer
auf Bestellung 34466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
29+0.61 EUR
2500+0.56 EUR
5000+0.32 EUR
Mindestbestellmenge: 28
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3080 1726105.pdf
3080
Hersteller: KEYSTONE
Description: KEYSTONE - 3080 - BATTERY CONTACT, POSITION, 12MM CELL, SURFACE MT
tariffCode: 85369095
Passende Batterie-/Akkugröße: Coin Cell - 12mm
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
Batteriehaltermontage: PCB
Anzahl der Batterien/Akkus: 1
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Produktpalette: -
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
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NCE3080K
Produktcode: 211602
zu Favoriten hinzufügen Lieblingsprodukt

Transistoren > MOSFET N-CH
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1330-80K page21_1330.pdf
1330-80K
Hersteller: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.313" L x 0.115" W (7.94mm x 2.92mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
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1330-80K page21_1330-3359666.pdf
1330-80K
Hersteller: Delevan
RF Inductors - SMD 330uH 10% 7ohm Unshielded SMT Ind
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CFP3080KSB Standard%20_%20Mailers.pdf
CFP3080KSB
Hersteller: Conductive Containers, Inc.
Description: MAILER7 X 5 X 1.5
Features: Conductive
Packaging: Box
Material: Plastic
Type: Box
Dimensions - Overall: 7.00" L x 5.00" W x 1.50" H (177.8mm x 127.0mm x 38.1mm)
Usage: Storage, Transport
Produkt ist nicht verfügbar
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M1330-80K m1330.pdf
Hersteller: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.320" L x 0.125" W (8.13mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
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M1330-80K m1330-3359638.pdf
M1330-80K
Hersteller: Delevan
RF Inductors - SMD M83446/25-13F, Surface Mount, Inductor, 330 uH , +/- 10%
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MIL1330-80K page22_mil1330.pdf
Hersteller: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.325" L x 0.125" W (8.26mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
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MIL1330-80K page22_mil1330-3359716.pdf
MIL1330-80K
Hersteller: Delevan
RF Inductors - SMD M83446/33-13F, Surface Mount, Unshielded Inductor, 330 uH , +/- 10%
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MKP1848H53080KK2 mkp1848hdcl.pdf
MKP1848H53080KK2
Hersteller: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 3UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.012" (25.70mm)
Part Status: Active
Capacitance: 3 µF
ESR (Equivalent Series Resistance): 12.3 mOhms
Size / Dimension: 1.260" L x 0.591" W (32.00mm x 15.00mm)
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MKP1848H53080KK2 mkp1848hdcl.pdf
MKP1848H53080KK2
Hersteller: Vishay
Film Capacitors MKP1848H 3 F 10 800V=
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MKP1848H63080KY2 mkp1848hdcl.pdf
MKP1848H63080KY2
Hersteller: Vishay
Film Capacitors MKP1848H 30 F 10 800V=
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MKP1848H63080KY2 mkp1848hdcl.pdf
MKP1848H63080KY2
Hersteller: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5.6 MOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
Produkt ist nicht verfügbar
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MKP1848H63080KY5 mkp1848hdcl.pdf
MKP1848H63080KY5
Hersteller: Vishay
Film Capacitors MKP1848H 30 F 10 800V=
Produkt ist nicht verfügbar
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MKP1848H63080KY5 mkp1848hdcl.pdf
MKP1848H63080KY5
Hersteller: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial - 4 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
Produkt ist nicht verfügbar
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P3080KIT
Hersteller: Eaton Tripp Lite
Description: P3080KIT PARALLELING CABLE KIT
Packaging: Bulk
Part Status: Active
For Use With/Related Products: UPS Systems
Accessory Type: Mounting Kit
Produkt ist nicht verfügbar
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SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SCT3080KLGC11 datasheet?p=SCT3080KL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SCT3080KLHRC11 datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SCT3080KLHRC11 datasheet?p=SCT3080KLHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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SCT3080KRC15 sct3080kr-e.pdf
SCT3080KRC15
Hersteller: Rohm Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3080KRHRC15 sct3080krhr-e.pdf
SCT3080KRHRC15
Hersteller: Rohm Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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SCT3080KW7TL datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT3080KW7TL datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT3080KW7TL
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
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SCT3080KW7TL datasheet?p=SCT3080KW7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
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BDJ2GA3MEFJ-LBH2 bdxxga3mefj-lb-e
BDJ2GA3MEFJ-LBH2
Hersteller: ROHM Semiconductor
LDO Voltage Regulators 300mA 14-4.5 Vin LDO Industrial HTSOP-J8
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EP3CLS70F780I7N cyc3_ciii51001-1299430.pdf
EP3CLS70F780I7N
Hersteller: Altera
FPGA - Field Programmable Gate Array
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