Suchergebnisse für "3080k" : 40
Art der Ansicht :
Mindestbestellmenge: 50
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 17
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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NCE3080K | NCE Power Semiconductor |
Transistor N-Channel MOSFET; 30V; 20V; 10mOhm; 80A; 83W; -55°C ~ 175°C; NCE3080K NCE POWER TNCE3080k Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT3080KLGC11 | ROHM - Japan |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT3080KLGC11 | ROHM Semiconductor |
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auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KLGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KLHRC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247N Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KLHRC11 | ROHM Semiconductor |
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auf Bestellung 507 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KRC14 | ROHM Semiconductor |
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auf Bestellung 205 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KRC14 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KRC15 | ROHM Semiconductor |
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auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tj) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KRHRC15 | ROHM Semiconductor |
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auf Bestellung 818 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KRHRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KW7TL | ROHM Semiconductor |
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auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3080KW7TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 159W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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BDX-703080KW |
auf Bestellung 3 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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3080 | Keystone Electronics |
![]() Packaging: Bulk Battery Cell Size: Coin, 12.0mm Number of Cells: 1 Mounting Type: PCB, Surface Mount Style: Retainer Termination Style: SMD (SMT) Tab Height Above Board: 0.125" (3.17mm) Battery Series: 1216, 1220, 1225 Battery Type, Function: Coin Cell, Retainer |
auf Bestellung 68947 Stücke: Lieferzeit 10-14 Tag (e) |
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3080 | KEYSTONE |
![]() tariffCode: 85369095 Passende Batterie-/Akkugröße: Coin Cell - 12mm productTraceability: Yes-Date/Lot Code Kontaktüberzug: 0 rohsCompliant: YES euEccn: NLR Batteriehaltermontage: PCB Anzahl der Batterien/Akkus: 1 Kontaktmaterial: 0 hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 Produktpalette: - SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1330-80K | Delevan |
![]() Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.313" L x 0.115" W (7.94mm x 2.92mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 28Ohm Max Q @ Freq: 30 @ 790kHz Frequency - Self Resonant: 7MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Height - Seated (Max): 0.145" (3.68mm) Part Status: Active Inductance: 330 µH Current Rating (Amps): 45 mA |
Produkt ist nicht verfügbar |
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1330-80K | Delevan |
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Produkt ist nicht verfügbar |
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CFP3080KSB | Conductive Containers, Inc. |
Description: MAILER7 X 5 X 1.5 Features: Conductive Packaging: Box Material: Plastic Type: Box Dimensions - Overall: 7.00" L x 5.00" W x 1.50" H (177.8mm x 127.0mm x 38.1mm) Usage: Storage, Transport |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
M1330-80K | Delevan |
![]() Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: Nonstandard Size / Dimension: 0.320" L x 0.125" W (8.13mm x 3.18mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 28Ohm Max Q @ Freq: 30 @ 790kHz Frequency - Self Resonant: 7MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Height - Seated (Max): 0.145" (3.68mm) Part Status: Active Inductance: 330 µH Current Rating (Amps): 45 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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M1330-80K | Delevan |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MIL1330-80K | Delevan |
![]() Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: Nonstandard Size / Dimension: 0.325" L x 0.125" W (8.26mm x 3.18mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 28Ohm Max Q @ Freq: 30 @ 790kHz Frequency - Self Resonant: 7MHz Material - Core: Ferrite Inductance Frequency - Test: 790 kHz Height - Seated (Max): 0.145" (3.68mm) Part Status: Active Inductance: 330 µH Current Rating (Amps): 45 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MIL1330-80K | Delevan |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MKP1848H53080KK2 | Vishay Beyschlag/Draloric/BC Components |
![]() Tolerance: ±10% Features: 85C/85% Humidity; Low ESR, Low ESL Packaging: Tray Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Applications: Automotive; DC Link, DC Filtering Lead Spacing: 1.083" (27.50mm) Termination: PC Pins Ratings: AEC-Q200 Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - DC: 800V Height - Seated (Max): 1.012" (25.70mm) Part Status: Active Capacitance: 3 µF ESR (Equivalent Series Resistance): 12.3 mOhms Size / Dimension: 1.260" L x 0.591" W (32.00mm x 15.00mm) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MKP1848H63080KY2 | Vishay Beyschlag/Draloric/BC Components |
![]() Tolerance: ±10% Features: 85C/85% Humidity; Low ESR, Low ESL Packaging: Tray Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Applications: Automotive; DC Link, DC Filtering Lead Spacing: 2.067" (52.50mm) Termination: PC Pins Ratings: AEC-Q200 Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - DC: 800V Height - Seated (Max): 1.811" (46.00mm) Part Status: Active Capacitance: 30 µF ESR (Equivalent Series Resistance): 5.6 MOhms Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MKP1848H63080KY5 | Vishay Beyschlag/Draloric/BC Components |
![]() Tolerance: ±10% Features: 85C/85% Humidity; Low ESR, Low ESL Packaging: Tray Package / Case: Radial - 4 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Applications: Automotive; DC Link, DC Filtering Lead Spacing: 2.067" (52.50mm) Termination: PC Pins Ratings: AEC-Q200 Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - DC: 800V Height - Seated (Max): 1.811" (46.00mm) Part Status: Active Capacitance: 30 µF ESR (Equivalent Series Resistance): 5 mOhms Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm) |
Produkt ist nicht verfügbar |
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P3080KIT | Tripp Lite |
Description: P3080KIT PARALLELING CABLE KIT Packaging: Bulk Part Status: Active For Use With/Related Products: UPS Systems Accessory Type: Mounting Kit |
Produkt ist nicht verfügbar |
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SCT3080KLGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Power dissipation: 165W Case: TO247 On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3080KLGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Power dissipation: 165W Case: TO247 On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3080KLHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Pulsed drain current: 77A Power dissipation: 165W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3080KLHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Pulsed drain current: 77A Power dissipation: 165W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3080KW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 159W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SCT3080KW7TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 159W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SCT3080KW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 159W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BDJ2GA3MEFJ-LBH2 | ROHM Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EP3CLS70F780I7N | Altera |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
NCE3080K |
Hersteller: NCE Power Semiconductor
Transistor N-Channel MOSFET; 30V; 20V; 10mOhm; 80A; 83W; -55°C ~ 175°C; NCE3080K NCE POWER TNCE3080k
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 10mOhm; 80A; 83W; -55°C ~ 175°C; NCE3080K NCE POWER TNCE3080k
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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50+ | 0.63 EUR |
SCT3080KLGC11 |
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Hersteller: ROHM - Japan
SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm SCT3080KLGC11 TSCT3080klgc11
Anzahl je Verpackung: 2 Stücke
SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm SCT3080KLGC11 TSCT3080klgc11
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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2+ | 54.91 EUR |
SCT3080KLGC11 |
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Hersteller: ROHM Semiconductor
SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1+ | 33.09 EUR |
10+ | 30.82 EUR |
25+ | 23.78 EUR |
100+ | 22.65 EUR |
SCT3080KLGC11 |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1+ | 33.33 EUR |
30+ | 23.95 EUR |
120+ | 21.94 EUR |
SCT3080KLHRC11 |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 31A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1+ | 34.43 EUR |
30+ | 27.72 EUR |
SCT3080KLHRC11 |
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Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
auf Bestellung 507 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 34.16 EUR |
10+ | 34.14 EUR |
25+ | 28.60 EUR |
SCT3080KRC14 |
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Hersteller: ROHM Semiconductor
SiC MOSFETs TO247 1.2KV 31A N-CH SIC
SiC MOSFETs TO247 1.2KV 31A N-CH SIC
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 27.56 EUR |
10+ | 24.27 EUR |
100+ | 20.98 EUR |
240+ | 20.33 EUR |
480+ | 19.03 EUR |
1200+ | 17.44 EUR |
2640+ | 16.88 EUR |
SCT3080KRC14 |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 28.00 EUR |
30+ | 17.85 EUR |
120+ | 16.37 EUR |
SCT3080KRC15 |
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Hersteller: ROHM Semiconductor
SiC MOSFETs TO247 1.2KV 31A N-CH SIC
SiC MOSFETs TO247 1.2KV 31A N-CH SIC
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.16 EUR |
10+ | 15.47 EUR |
450+ | 15.00 EUR |
SCT3080KRC15 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.32 EUR |
10+ | 15.58 EUR |
SCT3080KRHRC15 |
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Hersteller: ROHM Semiconductor
SiC MOSFETs 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SiC MOSFETs 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 25.17 EUR |
10+ | 22.18 EUR |
100+ | 19.17 EUR |
250+ | 18.57 EUR |
450+ | 17.37 EUR |
900+ | 15.93 EUR |
2700+ | 15.42 EUR |
SCT3080KRHRC15 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 31A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.63 EUR |
10+ | 15.18 EUR |
SCT3080KW7TL |
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Hersteller: ROHM Semiconductor
SiC MOSFETs TO263 1.2KV 30A N-CH SIC
SiC MOSFETs TO263 1.2KV 30A N-CH SIC
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 29.66 EUR |
10+ | 21.93 EUR |
25+ | 21.91 EUR |
50+ | 21.89 EUR |
100+ | 19.69 EUR |
SCT3080KW7TL |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 29.88 EUR |
10+ | 22.11 EUR |
100+ | 19.09 EUR |
3080 |
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Hersteller: Keystone Electronics
Description: BATTERY RETAINER COIN 12MM SMD
Packaging: Bulk
Battery Cell Size: Coin, 12.0mm
Number of Cells: 1
Mounting Type: PCB, Surface Mount
Style: Retainer
Termination Style: SMD (SMT) Tab
Height Above Board: 0.125" (3.17mm)
Battery Series: 1216, 1220, 1225
Battery Type, Function: Coin Cell, Retainer
Description: BATTERY RETAINER COIN 12MM SMD
Packaging: Bulk
Battery Cell Size: Coin, 12.0mm
Number of Cells: 1
Mounting Type: PCB, Surface Mount
Style: Retainer
Termination Style: SMD (SMT) Tab
Height Above Board: 0.125" (3.17mm)
Battery Series: 1216, 1220, 1225
Battery Type, Function: Coin Cell, Retainer
auf Bestellung 68947 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.06 EUR |
20+ | 0.88 EUR |
25+ | 0.82 EUR |
100+ | 0.73 EUR |
500+ | 0.67 EUR |
2500+ | 0.61 EUR |
5000+ | 0.53 EUR |
3080 |
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Hersteller: KEYSTONE
Description: KEYSTONE - 3080 - BATTERY CONTACT, POSITION, 12MM CELL, SURFACE MT
tariffCode: 85369095
Passende Batterie-/Akkugröße: Coin Cell - 12mm
productTraceability: Yes-Date/Lot Code
Kontaktüberzug: 0
rohsCompliant: YES
euEccn: NLR
Batteriehaltermontage: PCB
Anzahl der Batterien/Akkus: 1
Kontaktmaterial: 0
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (27-Jun-2024)
Description: KEYSTONE - 3080 - BATTERY CONTACT, POSITION, 12MM CELL, SURFACE MT
tariffCode: 85369095
Passende Batterie-/Akkugröße: Coin Cell - 12mm
productTraceability: Yes-Date/Lot Code
Kontaktüberzug: 0
rohsCompliant: YES
euEccn: NLR
Batteriehaltermontage: PCB
Anzahl der Batterien/Akkus: 1
Kontaktmaterial: 0
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
1330-80K |
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Hersteller: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.313" L x 0.115" W (7.94mm x 2.92mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
Description: FIXED IND 330UH 45MA 28 OHM SMD
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard
Size / Dimension: 0.313" L x 0.115" W (7.94mm x 2.92mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1330-80K |
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Hersteller: Delevan
RF Inductors - SMD 330uH 10% 7ohm Unshielded SMT Ind
RF Inductors - SMD 330uH 10% 7ohm Unshielded SMT Ind
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CFP3080KSB |
Hersteller: Conductive Containers, Inc.
Description: MAILER7 X 5 X 1.5
Features: Conductive
Packaging: Box
Material: Plastic
Type: Box
Dimensions - Overall: 7.00" L x 5.00" W x 1.50" H (177.8mm x 127.0mm x 38.1mm)
Usage: Storage, Transport
Description: MAILER7 X 5 X 1.5
Features: Conductive
Packaging: Box
Material: Plastic
Type: Box
Dimensions - Overall: 7.00" L x 5.00" W x 1.50" H (177.8mm x 127.0mm x 38.1mm)
Usage: Storage, Transport
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M1330-80K |
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Hersteller: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.320" L x 0.125" W (8.13mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.320" L x 0.125" W (8.13mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M1330-80K |
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Hersteller: Delevan
RF Inductors - SMD M83446/25-13F, Surface Mount, Inductor, 330 uH , +/- 10%
RF Inductors - SMD M83446/25-13F, Surface Mount, Inductor, 330 uH , +/- 10%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIL1330-80K |
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Hersteller: Delevan
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.325" L x 0.125" W (8.26mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
Description: FIXED IND 330UH 45MA 28 OHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: Nonstandard
Size / Dimension: 0.325" L x 0.125" W (8.26mm x 3.18mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 28Ohm Max
Q @ Freq: 30 @ 790kHz
Frequency - Self Resonant: 7MHz
Material - Core: Ferrite
Inductance Frequency - Test: 790 kHz
Height - Seated (Max): 0.145" (3.68mm)
Part Status: Active
Inductance: 330 µH
Current Rating (Amps): 45 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MIL1330-80K |
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Hersteller: Delevan
RF Inductors - SMD M83446/33-13F, Surface Mount, Unshielded Inductor, 330 uH , +/- 10%
RF Inductors - SMD M83446/33-13F, Surface Mount, Unshielded Inductor, 330 uH , +/- 10%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MKP1848H53080KK2 |
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Hersteller: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 3UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.012" (25.70mm)
Part Status: Active
Capacitance: 3 µF
ESR (Equivalent Series Resistance): 12.3 mOhms
Size / Dimension: 1.260" L x 0.591" W (32.00mm x 15.00mm)
Description: CAP FILM 3UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.012" (25.70mm)
Part Status: Active
Capacitance: 3 µF
ESR (Equivalent Series Resistance): 12.3 mOhms
Size / Dimension: 1.260" L x 0.591" W (32.00mm x 15.00mm)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MKP1848H63080KY2 |
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Hersteller: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5.6 MOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5.6 MOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MKP1848H63080KY5 |
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Hersteller: Vishay Beyschlag/Draloric/BC Components
Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial - 4 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
Description: CAP FILM 30UF 10% 800VDC RADIAL
Tolerance: ±10%
Features: 85C/85% Humidity; Low ESR, Low ESL
Packaging: Tray
Package / Case: Radial - 4 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 2.067" (52.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 800V
Height - Seated (Max): 1.811" (46.00mm)
Part Status: Active
Capacitance: 30 µF
ESR (Equivalent Series Resistance): 5 mOhms
Size / Dimension: 2.264" L x 1.181" W (57.50mm x 30.00mm)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P3080KIT |
Hersteller: Tripp Lite
Description: P3080KIT PARALLELING CABLE KIT
Packaging: Bulk
Part Status: Active
For Use With/Related Products: UPS Systems
Accessory Type: Mounting Kit
Description: P3080KIT PARALLELING CABLE KIT
Packaging: Bulk
Part Status: Active
For Use With/Related Products: UPS Systems
Accessory Type: Mounting Kit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080KLGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080KLGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Power dissipation: 165W
Case: TO247
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SCT3080KLHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080KLHRC11 |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 77A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 77A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080KW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080KW7TL |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 30A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 159W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Produkt ist nicht verfügbar
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SCT3080KW7TL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 75A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
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BDJ2GA3MEFJ-LBH2 |
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Hersteller: ROHM Semiconductor
LDO Voltage Regulators 300mA 14-4.5 Vin LDO Industrial HTSOP-J8
LDO Voltage Regulators 300mA 14-4.5 Vin LDO Industrial HTSOP-J8
Produkt ist nicht verfügbar
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EP3CLS70F780I7N |
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Hersteller: Altera
FPGA - Field Programmable Gate Array
FPGA - Field Programmable Gate Array
Produkt ist nicht verfügbar
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