Suchergebnisse für "60n03" : 115

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P60N03LD
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P60N03LDG NIKO 09+
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P60N03LR
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PHB160N03
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PHB160N03T PHILIPS TO252-2.5
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RFP60N03
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RQD60N03L
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RTW060N03
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SDB60N03L
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SFB60N03L
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SKR60N03L
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SMB60N03 TO-220
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SMB60N03-10L
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SMP60N03
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SMP60N03-10L
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SPB460N03L
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SPU060N03L
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STB60N03L-10 ST 07+ TO-263/D2-PAK
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STB60N03L-10 ST TO-263/D2-PAK
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STD60N03LH5T4
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STP60N03
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STP60N03L-10
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V60N03L-10 ST 09+ HSOP10
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V60N03L-10 ST 98+
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AP60N03S
Produktcode: 121578 		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPD060N03LG (Transistoren Feld N-Kanal)
Produktcode: 45565 		Transistoren > MOSFET N-CH
ZCODE: 8541 29 00 10
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P60N03LD
Produktcode: 98604 		Verschiedene Bauteile > Other components 3
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P60N03LDG
Produktcode: 98605 		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
10018960-N0300AULF 10018960-N0300AULF Amphenol ICC (FCI) 10018960.pdf Description: CABLE INFINIBAND 4X M-M 3M
Features: Unequalized
Packaging: Bulk
Connector Type: Plug to Plug
Gender: Male to Male
Color: Black
Length: 9.84' (3.00m)
Shielding: Shielded
Number of Positions: 16
Cable Type: Round
Usage: External
Fastening Type: Thumbscrews
Cable Connectors: Infiniband 4x
Part Status: Active
Produkt ist nicht verfügbar
50M035060N035 50M035060N035 Essentra 1499555-1823376.pdf Screws & Fasteners Pan Slotted Screw, M3.5 X .6 Thread, 35mm Lg, Natural, Nylon
Produkt ist nicht verfügbar
IPD060N03LGATMA1 IPD060N03LGATMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
IPD060N03LGBTMA1 IPD060N03LGBTMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Produkt ist nicht verfügbar
IPD060N03LGBTMA1 IPD060N03LGBTMA1 Infineon Technologies 3391ipd060n03lg_rev2.0.pdffolderiddb3a304313b8b5a60113cee8763b02d7fil.pdf Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies 3391ipd060n03lg_rev2.0.pdffolderiddb3a304313b8b5a60113cee8763b02d7fil.pdf Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
IPU060N03L G IPU060N03L G Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
NP60N03KUG-E1-AY NP60N03KUG-E1-AY Renesas Electronics Corporation np60n03kug-data-sheet Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03SUG-E1-AY NP60N03SUG-E1-AY Renesas Electronics Corporation np60n03sug-data-sheet Description: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03SUG-E1-AY NP60N03SUG-E1-AY Renesas Electronics Corporation np60n03sug-data-sheet Description: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NTD60N03-001 NTD60N03-001 onsemi NTD60N03-D.pdf Description: MOSFET N-CH 28V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 28 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V
Produkt ist nicht verfügbar
NTD60N03T4 NTD60N03T4 onsemi NTD60N03-D.pdf Description: MOSFET N-CH 28V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 28 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V
Produkt ist nicht verfügbar
TSM060N03CP Taiwan Semiconductor Corporation Description: 30V, 70A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Produkt ist nicht verfügbar
TSM060N03CP ROG TSM060N03CP ROG Taiwan Semiconductor tsm060n03cp_b1807.pdf Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TSM060N03CP ROG TSM060N03CP ROG Taiwan Semiconductor TSM060N03CP_B1807.pdf MOSFET 30V, 70A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
TSM060N03ECP Taiwan Semiconductor Corporation Description: 30V, 70A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Produkt ist nicht verfügbar
TSM060N03ECP ROG Taiwan Semiconductor tsm060n03ecp_b1807.pdf Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TSM060N03PQ33 Taiwan Semiconductor Corporation Description: 30V, 62A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
Produkt ist nicht verfügbar
TSM060N03PQ33 RGG TSM060N03PQ33 RGG Taiwan Semiconductor 43312558292727tsm060n03pq33_c1608.pdf Trans MOSFET N-CH 30V 15A 8-Pin P-DFN EP T/R
Produkt ist nicht verfügbar
TSM60N03CP ROG TSM60N03CP ROG Taiwan Semiconductor 47432315977426760tsm60n03_a12.pdf Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IAUC60N04S6N031HATMA1 Infineon Technologies infineon-iauc60n04s6n031h-datasheet-v01_00-en.pdf SP003863382
Produkt ist nicht verfügbar
NTE2904 NTE2904 NTE Electronics nte2904.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 45A; Idm: 210A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 45A
Pulsed drain current: 210A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
P60N03LD
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
P60N03LDG
Hersteller: NIKO
09+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
P60N03LR
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
PHB160N03
auf Bestellung 2800 Stücke:
Lieferzeit 21-28 Tag (e)
PHB160N03T
Hersteller: PHILIPS
TO252-2.5
auf Bestellung 71 Stücke:
Lieferzeit 21-28 Tag (e)
RFP60N03
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RQD60N03L
auf Bestellung 550 Stücke:
Lieferzeit 21-28 Tag (e)
RTW060N03
auf Bestellung 2399 Stücke:
Lieferzeit 21-28 Tag (e)
SDB60N03L
auf Bestellung 800 Stücke:
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SFB60N03L
auf Bestellung 3800 Stücke:
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SFD60N03L
auf Bestellung 8000 Stücke:
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SFP60N03
auf Bestellung 20 Stücke:
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SKR60N03L
auf Bestellung 2530 Stücke:
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SMB60N03
TO-220
auf Bestellung 500 Stücke:
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SMB60N03-10L
auf Bestellung 50 Stücke:
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SMP60N03
auf Bestellung 7150 Stücke:
Lieferzeit 21-28 Tag (e)
SMP60N03-10L
auf Bestellung 7400 Stücke:
Lieferzeit 21-28 Tag (e)
SPB460N03L
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SPU060N03L
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
STB60N03L-10
Hersteller: ST
07+ TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
STB60N03L-10
Hersteller: ST
TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
STD60N03LH5T4
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
STP60N03
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
STP60N03L-10
auf Bestellung 997 Stücke:
Lieferzeit 21-28 Tag (e)
V60N03L-10
Hersteller: ST
09+ HSOP10
auf Bestellung 1009 Stücke:
Lieferzeit 21-28 Tag (e)
V60N03L-10
Hersteller: ST
98+
auf Bestellung 12700 Stücke:
Lieferzeit 21-28 Tag (e)
AP60N03S
Produktcode: 121578
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPD060N03LG (Transistoren Feld N-Kanal)
Produktcode: 45565
Transistoren > MOSFET N-CH
ZCODE: 8541 29 00 10
Produkt ist nicht verfügbar
P60N03LD
Produktcode: 98604
Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
P60N03LDG
Produktcode: 98605
Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
10018960-N0300AULF 10018960.pdf
10018960-N0300AULF
Hersteller: Amphenol ICC (FCI)
Description: CABLE INFINIBAND 4X M-M 3M
Features: Unequalized
Packaging: Bulk
Connector Type: Plug to Plug
Gender: Male to Male
Color: Black
Length: 9.84' (3.00m)
Shielding: Shielded
Number of Positions: 16
Cable Type: Round
Usage: External
Fastening Type: Thumbscrews
Cable Connectors: Infiniband 4x
Part Status: Active
Produkt ist nicht verfügbar
50M035060N035 1499555-1823376.pdf
50M035060N035
Hersteller: Essentra
Screws & Fasteners Pan Slotted Screw, M3.5 X .6 Thread, 35mm Lg, Natural, Nylon
Produkt ist nicht verfügbar
IPD060N03LGATMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPD060N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
IPD060N03LGBTMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPD060N03LGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Produkt ist nicht verfügbar
IPD060N03LGBTMA1 3391ipd060n03lg_rev2.0.pdffolderiddb3a304313b8b5a60113cee8763b02d7fil.pdf
IPD060N03LGBTMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPS060N03LGAKMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPS060N03LGAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
IPS060N03LGAKMA1 3391ipd060n03lg_rev2.0.pdffolderiddb3a304313b8b5a60113cee8763b02d7fil.pdf
IPS060N03LGAKMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
IPU060N03L G IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
IPU060N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
NP60N03KUG-E1-AY np60n03kug-data-sheet
NP60N03KUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03SUG-E1-AY np60n03sug-data-sheet
NP60N03SUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NP60N03SUG-E1-AY np60n03sug-data-sheet
NP60N03SUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
NTD60N03-001 NTD60N03-D.pdf
NTD60N03-001
Hersteller: onsemi
Description: MOSFET N-CH 28V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 28 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V
Produkt ist nicht verfügbar
NTD60N03T4 NTD60N03-D.pdf
NTD60N03T4
Hersteller: onsemi
Description: MOSFET N-CH 28V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 28 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V
Produkt ist nicht verfügbar
TSM060N03CP
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 70A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Produkt ist nicht verfügbar
TSM060N03CP ROG tsm060n03cp_b1807.pdf
TSM060N03CP ROG
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TSM060N03CP ROG TSM060N03CP_B1807.pdf
TSM060N03CP ROG
Hersteller: Taiwan Semiconductor
MOSFET 30V, 70A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
TSM060N03ECP
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 70A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Produkt ist nicht verfügbar
TSM060N03ECP ROG tsm060n03ecp_b1807.pdf
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TSM060N03PQ33
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 62A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
Produkt ist nicht verfügbar
TSM060N03PQ33 RGG 43312558292727tsm060n03pq33_c1608.pdf
TSM060N03PQ33 RGG
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 30V 15A 8-Pin P-DFN EP T/R
Produkt ist nicht verfügbar
TSM60N03CP ROG 47432315977426760tsm60n03_a12.pdf
TSM60N03CP ROG
Hersteller: Taiwan Semiconductor
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IAUC60N04S6N031HATMA1 infineon-iauc60n04s6n031h-datasheet-v01_00-en.pdf
Hersteller: Infineon Technologies
SP003863382
Produkt ist nicht verfügbar
NTE2904 nte2904.pdf
NTE2904
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 45A; Idm: 210A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 45A
Pulsed drain current: 210A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
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